CN204391038U - A kind of plasma etching machine - Google Patents
A kind of plasma etching machine Download PDFInfo
- Publication number
- CN204391038U CN204391038U CN201520127847.6U CN201520127847U CN204391038U CN 204391038 U CN204391038 U CN 204391038U CN 201520127847 U CN201520127847 U CN 201520127847U CN 204391038 U CN204391038 U CN 204391038U
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- CN
- China
- Prior art keywords
- coil
- retainer ring
- support bar
- plasma etching
- etching machine
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- Expired - Fee Related
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- Plasma Technology (AREA)
Abstract
The utility model discloses a kind of plasma etching machine, comprise coil brace and inductance coil, described coil brace comprises retainer ring, lower retainer ring, is located at least 3 support bars between retainer ring and lower retainer ring; The lateral wall of described support bar is provided with coil groove, makes inductance coil be helically wound around on support along coil groove; The outside of described support bar is also provided with the cover plate of cooperation, and inductance coil is held between support bar and cover plate.Coil brace of the present utility model not only plays fixation, also ensures that coil is not yielding, reduces the replacing frequency of inductance coil, extend the useful life of silica crucible, improve the stability of equipment; Thus effectively improve etching effect.
Description
Technical field
The utility model relates to a kind of dry etching device, is specifically related to a kind of plasma etching machine.
Background technology
At present, plasma etching technology, as one of form modal in dry etching, has good anisotropy because of it and process controllability is widely used in the fields such as integrated circuit, semiconductor lighting, MEMS (micro electro mechanical system), Advanced Packaging, fiber waveguide.
Plasma etching adopts high frequency glow discharge reaction, makes reacting gas activate Viability particle, as atom or free radical, these active particles are diffused into the position that need etch, react with the material that is etched there, form return volatile reactants and be removed, thus realize the object of etching.
In prior art, plasma etching machine is generally made up of reative cell, unit of supplying gas, pumping cells, electric automatic control unit, high frequency electric source, adaptation and mainframe etc.Reative cell is the core of plasma etching machine, and inside arranges inductance coil, and inductance coil utilizes coil brace to support, and high frequency glow discharge course of reaction adopts inductance coil to produce glow discharge, and inside inductance coil, places silica crucible as reacting environment.
In existing plasma etching machine, coil brace madial wall arranges coil groove, and inductance coil ring recess along the line is wrapped on coil brace, and coil groove plays the effect of fixed inductance coil.Because inductance coil is fixed on inside coil brace, lack location, operationally, temperature inside and outside reative cell can raise, inductance coil can produce high temperature deformation, and touching crucible causes it to burn, and greatly reduces the useful life of crucible, surface of the work also can be caused to etch uneven, affect etching effect.
Therefore, develop a kind of newly for plasma etching machine coil brace, with fixed inductance coil, operationally, provide uniform electric field and distribution of gas, there is positive realistic meaning.
Summary of the invention
Goal of the invention of the present utility model is to provide a kind of plasma etching machine.
To achieve the above object of the invention, the technical solution adopted in the utility model is: a kind of plasma etching machine, comprise coil brace and inductance coil, described coil brace comprises retainer ring, lower retainer ring, is located at least 3 support bars between retainer ring and lower retainer ring; The lateral wall of described support bar is provided with coil groove, makes inductance coil be helically wound around on support along coil groove; The outside of described support bar is also provided with the cover plate of cooperation, and inductance coil is held between support bar and cover plate.
Above, upper retainer ring, lower retainer ring and support bar form a fixing cylindrical solenoid frame; Support bar is arranged groove as coil groove, the line of induction is wrapped on support along coil groove and forms spiral inductor coil; Support bar is inner side closest to the one side of inductance coil, is outside relative to the one side of inner side; Cover plate is arranged at outside support bar, prevents inductance coil to be out of shape.
Described coil groove can be arc groove structure, also can be the conventional structures such as cuboid groove.
In technique scheme, the quantity of described support bar is 3 ~ 8, and support bar is evenly distributed between retainer ring and lower retainer ring.Preferably, the quantity of described support bar is 6.
In technique scheme, every root support bar is provided with 8 ~ 10 coil grooves.The number of turns that inductance coil is wound around is 8 ~ 9 circles.
In technique scheme, the width of described coil groove is 6 ~ 6.5 mm, and the degree of depth is 7 ~ 9 mm.The line of induction can pass through wire casing, and is fixed by wire casing.Preferably, the width of described coil groove is 6.1 mm, and the degree of depth is 8 mm.
In technique scheme, fixed ring and lower retainer ring are cirque structure.
In technique scheme, described cover plate is cuboid structure; It is screwed and is connected on support bar.Operationally, coil temperature distortion, under the protection of cover plate, displacement is minimum, ensures electric fields uniform, and can not touch crucible.
In technique scheme, fixed ring and lower retainer ring are asphalt mixtures modified by epoxy resin alicyclic ring.The material of described support bar is Teflon.
In technique scheme, be provided with crucible in described coil brace, the gap of inductance coil and crucible is 5 ~ 7 mm.
Because technique scheme is used, the utility model compared with prior art has following advantages:
1, the utility model arranges coil groove at the coil brace lateral wall of plasma etching machine, inductance coil is fixed by this coil groove, thus avoid existing coil and be operationally out of shape the touching crucible defect that causes it to damage, be conducive to prolongation pot life; Outside coil brace, threading is more convenient simultaneously, is conducive to device fabrication, maintenance;
2, the utility model stablizes inductance coil further by arranging cover plate; Operationally, coil temperature distortion, under the protection of cover plate, displacement is minimum, ensures electric fields uniform, is conducive to the stable of etching effect; Make coil not yielding simultaneously, reduce the replacing frequency of inductance coil;
3, plasma etching machine coil brace structure of the present utility model is simple, be positioned at reative cell, ensure the stable of electric field in course of reaction, gas, reduce the replacing frequency of inductance coil, extend pot life, improve the stability of integral device, ensure etching effect, be applicable to industrial applications.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment one coil support.
Fig. 2 is the structural representation with the coil brace of inductance coil in the utility model embodiment one.
Wherein: 1, upper retainer ring; 2, lower retainer ring; 3, support bar; 4, cover plate; 5, coil groove; 6, screw; 7, inductance coil.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described:
Embodiment one
Shown in accompanying drawing 1, a kind of plasma etching machine coil brace, comprises retainer ring 1, lower retainer ring 2, is located at support bar 3 between retainer ring and lower retainer ring; Retainer ring is cirque structure; 6 support bars are evenly distributed between retainer ring and lower retainer ring; The outside of support bar 3 is provided with coil groove 5; Cover plate 4 is arranged on the outside of support bar 3 by screw 6.In order to the structure of display line ring recess, accompanying drawing only embodies 1 cover plate.
In the present embodiment, every root support bar is provided with 9 coil grooves; Coil groove is arc-shaped structure, and the width of coil groove is 6.1mm, and the degree of depth is 8mm; Cover plate is the cuboid of 269 × 10 × 20mm; The material of upper retainer ring and lower retainer ring is epoxy resin; The material of support bar is Teflon.
Upper retainer ring, lower retainer ring and support bar form a fixing cylindrical solenoid frame, and the line of induction is wrapped on support along coil groove and forms spiral inductor coil 7, and cover plate is arranged at outside support bar, prevents inductance coil to be out of shape, shown in accompanying drawing 2.
During real work, replace existing coil brace and inductance coil with above new coil support and inductance coil, form new plasma etching machine; Crucible is placed in inside inductance coil, and the gap of inductance coil and crucible is 5 mm, and workpiece is placed in crucible, and energising can carry out plasma etching.In etching process, the temperature inside and outside reative cell can raise, and inductance coil can produce high temperature deformation, coil brace of the present utility model not only plays fixation, also ensures that coil is not yielding, reduces the replacing frequency of inductance coil, extend the useful life of silica crucible, improve the stability of equipment; Thus effectively improve etching effect.
Claims (9)
1. a plasma etching machine, comprise coil brace and inductance coil, it is characterized in that: described coil brace comprises retainer ring (1), lower retainer ring (2), is located at least 3 support bars (3) between retainer ring (1) and lower retainer ring (2);
The lateral wall of described support bar (3) is provided with coil groove (5), makes inductance coil be helically wound around on support along coil groove;
The outside of described support bar (3) is also provided with the cover plate (4) of cooperation, and inductance coil is held between support bar and cover plate.
2. plasma etching machine according to claim 1, is characterized in that: the quantity of described support bar is 3 ~ 8, and support bar is evenly distributed between retainer ring and lower retainer ring.
3. plasma etching machine according to claim 2, is characterized in that: the quantity of described support bar is 6.
4. plasma etching machine according to claim 1, is characterized in that: every root support bar (3) is provided with 8 ~ 10 coil grooves.
5. plasma etching machine according to claim 1, is characterized in that: the width of described coil groove is 6 ~ 6.5 mm, and the degree of depth is 7 ~ 9 mm.
6. plasma etching machine according to claim 1, is characterized in that: fixed ring and lower retainer ring are cirque structure.
7. plasma etching machine according to claim 1, is characterized in that: described cover plate (4) is fixedly connected on support bar by screw (6).
8. plasma etching machine according to claim 1, is characterized in that: fixed ring and lower retainer ring are asphalt mixtures modified by epoxy resin alicyclic ring.
9. plasma etching machine according to claim 1, is characterized in that: be provided with crucible in described coil brace, and the gap of inductance coil and crucible is 5 ~ 7 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520127847.6U CN204391038U (en) | 2015-03-05 | 2015-03-05 | A kind of plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520127847.6U CN204391038U (en) | 2015-03-05 | 2015-03-05 | A kind of plasma etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204391038U true CN204391038U (en) | 2015-06-10 |
Family
ID=53363735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520127847.6U Expired - Fee Related CN204391038U (en) | 2015-03-05 | 2015-03-05 | A kind of plasma etching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204391038U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108770173A (en) * | 2018-07-27 | 2018-11-06 | 上海工程技术大学 | A kind of plasma jet generating device |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
| WO2020118873A1 (en) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | Reaction chamber structure of plasma deposition furnace |
| CN114446761A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
-
2015
- 2015-03-05 CN CN201520127847.6U patent/CN204391038U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108770173A (en) * | 2018-07-27 | 2018-11-06 | 上海工程技术大学 | A kind of plasma jet generating device |
| WO2020118873A1 (en) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | Reaction chamber structure of plasma deposition furnace |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
| CN114446761A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN114446761B (en) * | 2022-01-26 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150610 Termination date: 20170305 |