CN204375769U - Graphene nano crystal silicon solar batteries - Google Patents
Graphene nano crystal silicon solar batteries Download PDFInfo
- Publication number
- CN204375769U CN204375769U CN201520101000.0U CN201520101000U CN204375769U CN 204375769 U CN204375769 U CN 204375769U CN 201520101000 U CN201520101000 U CN 201520101000U CN 204375769 U CN204375769 U CN 204375769U
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- electrode
- graphene
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- thin film
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000002159 nanocrystal Substances 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- XHFLMVUWWQVXGR-UHFFFAOYSA-N tungsten yttrium Chemical compound [Y]=[W] XHFLMVUWWQVXGR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of graphene nano crystal silicon solar batteries, its structure is followed successively by from top to bottom: the N-shaped Graphene (3) of electrode of metal (1), SiNx film (2), wide with gap, the p-type Graphene (4) of wide with gap, N-shaped Nano silicon-crystal thin film (5), p-type Nano silicon-crystal thin film (6), the N-shaped Graphene (7) of narrow with gap, the p-type Graphene (8) of narrow with gap, lower metal electrode (9), described electrode of metal (1) and lower metal electrode (9) are silver electrode.The utility model can absorb each wave band sunlight, reduces the reflection to sunlight, improves the efficiency of solar cell.
Description
Technical field
The utility model relates to area of solar cell, particularly relates to graphene nano crystal silicon solar batteries.
Background technology
The technology that current crystal-silicon solar cell manufacturer generally adopts chemical corrosion cleaning on solar cell is produced, the diffusion of POCl3 liquid source, chemical corrosion trimming, deposited silicon nitride antireflective coating, silk screen printing back electrode carry on the back electric field and front electrode, sintering.It is large that these technologies all have production capacity, simple to operate, the feature of technical maturity.The commercialization single crystal silicon solar cell produced by these technology at present 19%, polycrystalline silicon solar cell about 17.6%, the space of further raising efficiency is little.
Graphene (Graphene) a kind ofly forms with sp2 hybridized orbit the new material that hexangle type is the plane platelet structures of honeycomb lattice by carbon atom, purposes widely, as: super sturdy material, the electronic product, photon sensor, nano electron device, solar cell, monomolecular sensor, touch panel etc. that replace silicon.(under normal temperature, electron mobility is more than 15000 cm2/Vs for the carrier mobility of ink alkene excellence, considerably beyond the movement velocity of electronics in general conductor) and very thin thickness, being expected in theory avoid high transparent with high conductivity is character contrary each other, become optimum nesa coating, be considered to the substitution material of the ito thin film of current business extensive use.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, provides a kind of graphene nano crystal silicon solar batteries, can absorb each wave band sunlight, reduce the reflection to sunlight, improves the efficiency of solar cell.
The purpose of this utility model is achieved through the following technical solutions: graphene nano crystal silicon solar batteries, its structure is followed successively by from top to bottom: the N-shaped Graphene of electrode of metal, SiNx film, wide with gap, the p-type Graphene of wide with gap, N-shaped Nano silicon-crystal thin film, p-type Nano silicon-crystal thin film, the N-shaped Graphene of narrow with gap, p-type Graphene, the lower metal electrode of narrow with gap, described electrode of metal and lower metal electrode are silver electrode.
Described electrode of metal is zinc electrode, copper electrode, platinum electrode, Ce-W electrode, yttrium tungsten electrode or zirconiated tungsten.
Described lower metal electrode is zinc electrode, copper electrode, platinum electrode, Ce-W electrode, yttrium tungsten electrode or zirconiated tungsten.
The atom number of plies of the N-shaped Graphene of described wide with gap is individual layer, bilayer or four layers.
The atom number of plies of the p-type Graphene of described wide with gap is individual layer, bilayer or four layers.
The atom number of plies of the N-shaped Graphene of described narrow with gap is individual layer, bilayer or four layers.
The atom number of plies of the p-type Graphene of described narrow with gap is individual layer, bilayer or four layers.
Described n type Nano silicon-crystal thin film is n type nano-multicrystal silicon thin film.
Described p type Nano silicon-crystal thin film is p type nano-multicrystal silicon thin film.
The beneficial effects of the utility model are: the N-shaped Graphene of (1) wide with gap and the p-type Graphene of wide with gap are for absorbing the shortwave in sunlight, N-shaped Nano silicon-crystal thin film and p-type Nano silicon-crystal thin film are for absorbing the medium wave in sunlight, the N-shaped Graphene of narrow with gap and the p-type Graphene of narrow with gap are for absorbing the long wave in sunlight, realize the absorption to the light of wave band each in sunlight: (2) SiNx film can reduce the reflection of sunlight, improve the efficiency of solar cell; (3) adopt Graphene to be combined with nanocrystal silicon, utilize the electric conductivity of Graphene excellence, improve the efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of graphene nano crystal silicon solar batteries of the utility model;
In figure, 1-electrode of metal, 2-SiNx film, the n type Graphene of the wide with gap of 3-, the p type Graphene of the wide with gap of 4-, 5-n type Nano silicon-crystal thin film, 6-p type Nano silicon-crystal thin film, the n type Graphene of the narrow with gap of 7-, the p type Graphene of the narrow with gap of 8-, 9-lower metal electrode.
Embodiment
Below in conjunction with accompanying drawing, the technical solution of the utility model is described in further detail, but protection range of the present utility model is not limited to the following stated.
As shown in Figure 1, graphene nano crystal silicon solar batteries, its structure is followed successively by from top to bottom: the n type Graphene 3 of electrode of metal 1, SiNx film 2, wide with gap, the p type Graphene 4 of wide with gap, n type Nano silicon-crystal thin film 5, p type Nano silicon-crystal thin film 6, the n type Graphene 7 of narrow with gap, the p type Graphene 8 of narrow with gap, lower metal electrode 9, described electrode of metal 1 and lower metal electrode 9 are silver electrode.
Described electrode of metal 1 is zinc electrode, copper electrode, platinum electrode, Ce-W electrode, yttrium tungsten electrode or zirconiated tungsten;
Described lower metal electrode 9 is zinc electrode, copper electrode, platinum electrode, Ce-W electrode, yttrium tungsten electrode or zirconiated tungsten.
The atom number of plies of the n type Graphene 3 of described wide with gap is individual layer, bilayer or four layers;
The atom number of plies of the p type Graphene 4 of described wide with gap is individual layer, bilayer or four layers;
The atom number of plies of the n type Graphene 7 of described narrow with gap is individual layer, bilayer or four layers;
The atom number of plies of the p type Graphene 8 of described narrow with gap is individual layer, bilayer or four layers.
Described n type Nano silicon-crystal thin film 5 is n type nano-multicrystal silicon thin film; Described p type Nano silicon-crystal thin film 6 is p type nano-multicrystal silicon thin film.
The acquisition of Graphene can adopt chemical vapour deposition technique or silicon carbide epitaxial growth method, the acquisition of n type Graphene can by passing into ammonia, carrying out 900 degrees Celsius of annealing in graphene oxide, the acquisition of p type Graphene can adopt chemical vapour deposition (CVD) mode, in the container having h-BNC, pass into methane and ammonia can form (NH3-BH3) micel, under Cu substrate-catalytic, regulate the ratio of input methane and ammonia just can realize NP type electrology characteristic.
Claims (4)
1. graphene nano crystal silicon solar batteries, it is characterized in that: its structure is followed successively by from top to bottom: the n type Graphene (3) of electrode of metal (1), SiNx film (2), wide with gap, the p type Graphene (4) of wide with gap, n type Nano silicon-crystal thin film (5), p type Nano silicon-crystal thin film (6), the n type Graphene (7) of narrow with gap, the p type Graphene (8) of narrow with gap, lower metal electrode (9), described electrode of metal (1) and lower metal electrode (9) are silver electrode.
2. graphene nano crystal silicon solar batteries according to claim 1, is characterized in that: described electrode of metal (1) is zinc electrode, copper electrode, platinum electrode, Ce-W electrode, yttrium tungsten electrode or zirconiated tungsten;
Described lower metal electrode (9) is zinc electrode, copper electrode, platinum electrode, Ce-W electrode, yttrium tungsten electrode or zirconiated tungsten.
3. graphene nano crystal silicon solar batteries according to claim 1, is characterized in that: the atom number of plies of the n type Graphene (3) of described wide with gap is individual layer, bilayer or four layers;
The atom number of plies of the p type Graphene (4) of described wide with gap is individual layer, bilayer or four layers;
The atom number of plies of the n type Graphene (7) of described narrow with gap is individual layer, bilayer or four layers;
The atom number of plies of the p type Graphene (8) of described narrow with gap is individual layer, bilayer or four layers.
4. graphene nano crystal silicon solar batteries according to claim 1, is characterized in that: described n type Nano silicon-crystal thin film (5) is n type nano-multicrystal silicon thin film; Described p type Nano silicon-crystal thin film (6) is p type nano-multicrystal silicon thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520101000.0U CN204375769U (en) | 2015-02-12 | 2015-02-12 | Graphene nano crystal silicon solar batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520101000.0U CN204375769U (en) | 2015-02-12 | 2015-02-12 | Graphene nano crystal silicon solar batteries |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204375769U true CN204375769U (en) | 2015-06-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520101000.0U Expired - Fee Related CN204375769U (en) | 2015-02-12 | 2015-02-12 | Graphene nano crystal silicon solar batteries |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204375769U (en) |
-
2015
- 2015-02-12 CN CN201520101000.0U patent/CN204375769U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150603 Termination date: 20160212 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |