CN204342915U - 一种快速提高直拉硅单晶生长速度的热场结构 - Google Patents
一种快速提高直拉硅单晶生长速度的热场结构 Download PDFInfo
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105154966A (zh) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | 一种用于改善区熔硅单晶成晶的新型保温筒 |
CN105603520A (zh) * | 2016-01-20 | 2016-05-25 | 西安交通大学 | 一种高速单晶生长装置及方法 |
CN110106547A (zh) * | 2019-06-25 | 2019-08-09 | 宁夏银和新能源科技有限公司 | 提高直拉单晶拉速的装置 |
CN111020691A (zh) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | 拉制晶棒的系统和控制方法 |
CN113106546A (zh) * | 2021-03-25 | 2021-07-13 | 徐州鑫晶半导体科技有限公司 | 用于单晶炉的导流筒、单晶炉及导流筒的加工方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105154966A (zh) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | 一种用于改善区熔硅单晶成晶的新型保温筒 |
CN105603520A (zh) * | 2016-01-20 | 2016-05-25 | 西安交通大学 | 一种高速单晶生长装置及方法 |
CN105603520B (zh) * | 2016-01-20 | 2018-10-30 | 西安交通大学 | 一种高速单晶生长装置及方法 |
CN110106547A (zh) * | 2019-06-25 | 2019-08-09 | 宁夏银和新能源科技有限公司 | 提高直拉单晶拉速的装置 |
CN111020691A (zh) * | 2019-12-03 | 2020-04-17 | 徐州鑫晶半导体科技有限公司 | 拉制晶棒的系统和控制方法 |
CN113106546A (zh) * | 2021-03-25 | 2021-07-13 | 徐州鑫晶半导体科技有限公司 | 用于单晶炉的导流筒、单晶炉及导流筒的加工方法 |
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Effective date of registration: 20220414 Address after: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. Patentee after: Central leading semiconductor materials Co., Ltd Address before: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee before: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. |