CN204332989U - Multi-Channel Gallium Arsenide Photoconductive Switch - Google Patents

Abstract

The utility model provides multichannel GaAs photoconductive switch.Insulating base in described photoconductivity switching is provided with the GaAs of N number of strip arranged in parallel, GaAs is fixedly connected with insulating base, and the spacing between adjacent GaAs is equal, and forms passage on insulating base, the two ends of GaAs flush, and dielectric is arranged in the channel.Arrange alloy electrode at GaAs two ends, GaAs is interconnected with the alloy electrode of one end.The utility model, under suitable bias field and infrared laser trigger, will produce M conductive channel (1<M≤N) in N number of GaAs; Conducting internal resistance of the present utility model is the 1/M of single channel photoconductivity switching, obviously can improve the on state characteristic of photoconductivity switching.Total heating power of the present utility model is the 1/M of single channel photoconductivity switching, and the heating power of each conductive channel is the 1/M of single channel photoconductivity switching ², significantly reduce heating and the fire damage of photoconductivity switching, improve the useful life of photoconductivity switching.

Description

Multi-Channel Gallium Arsenide Photoconductive Switch

technical field

The utility model belongs to the field of high-power semiconductor devices, in particular to a multi-channel gallium arsenide photoconductive switch, which can be used as a switch of a high-power pulse system of nanosecond order.

Background technique

At present, gallium arsenide photoconductive switches have been widely used in photodetection equipment, terahertz generation and detection devices, compact pulse power systems and other fields. However, in the nonlinear conduction mode, high-power practical GaAs photoconductive switches have the disadvantages of severe thermal damage and short working life. It is necessary to develop high-power GaAs photoconductive switches with low internal resistance and long life. inevitable trend in this field.

Contents of the invention

In order to overcome the disadvantage of severe thermal damage in the prior art when the gallium arsenide photoconductive switch operates at high power in a nonlinear conduction mode, the utility model provides a multi-channel gallium arsenide photoconductive switch. The utility model ensures that the gallium arsenide photoconductive switch has a higher service life while realizing high voltage and large current conduction of the gallium arsenide photoconductive switch.

The technical scheme that the utility model solves its technical problem adopts is:

The multi-channel gallium arsenide photoconductive switch of the utility model is characterized in that the photoconductive switch includes an insulating base, a high-mobility gallium arsenide, an insulating medium, and an alloy electrode with ohmic contact. The connection relationship is that N elongated gallium arsenides arranged in parallel are arranged on the insulating base, the gallium arsenide is fixedly connected to the insulating base, and the distance between adjacent gallium arsenides is equal A channel is formed between adjacent gallium arsenides on the insulating base, the two ends of the gallium arsenide are flush, and the insulating medium is arranged in the channel. A photolithography mask, electron beam evaporation or magnetron sputtering, high temperature annealing and other processes are used to set ohmic-contact alloy electrodes at both ends of each elongated gallium arsenide, and the alloy electrodes at the same end of the gallium arsenide are connected to each other. Thus a multi-channel gallium arsenide photoconductive switch is obtained.

The insulating medium may be replaced by a gap.

The number of high mobility GaAs ranges from two to fifty.

Based on the idea of parallel conduction of multiple switches, the technical leap from single-channel conduction to multi-channel conduction of GaAs photoconductive switches can be realized, which greatly reduces the internal resistance and thermal damage of switches, and improves the performance of GaAs photoconductive switches. service life. The multi-channel gallium arsenide photoconductive switch of the present utility model is a single-channel photoconductive switch which adopts semiconductor technology or mechanical technology to make and arrange N narrow strips and the gallium arsenide materials are not connected to each other, but each The anode electrodes of the single-channel photoconductive switches are connected to each other to form a common anode, and the cathode electrodes of each single-channel photoconductive switch are connected to each other to form a common cathode, so that N single-channel gallium arsenide photoconductive switches are connected in parallel to form a multi-channel arsenide Gallium photoconductive switch.

The beneficial effects of the utility model are: the multi-channel gallium arsenide photoconductive switch of the utility model is triggered by a suitable bias electric field and an infrared laser, and M conductive channels (1<M≤N); the conduction internal resistance of the multi-channel GaAs photoconductive switch is 1/M of that of the single-channel photoconductive switch, which can significantly improve the conduction characteristics of the photoconductive switch. The total heating power of the multi-channel GaAs photoconductive switch is 1/M of the single-channel photoconductive switch, and the heating power of each conductive channel is 1/M ² of the single-channel photoconductive switch, which greatly reduces the heat generation of the photoconductive switch And thermal damage, improve the service life of the photoconductive switch.

Description of drawings

Fig. 1 is the structural representation of the utility model;

Fig. 2 is a side view of the utility model;

In the figure, 1. insulating base 2. gallium arsenide 3. insulating medium 4. alloy electrode.

Detailed ways

Below in conjunction with accompanying drawing, the utility model is further described.

Example 1

Fig. 1 is a schematic structural view of the utility model, and Fig. 2 is a side view of the utility model. In Figure 1 and Figure 2.

The multi-channel gallium arsenide photoconductive switch of the utility model comprises an insulating base 1, a high-mobility gallium arsenide 2, an insulating medium 3, and an alloy electrode 4 with ohmic contact. The connection relationship is that N elongated gallium arsenide 2 arranged in parallel are arranged on the insulating base 1, the gallium arsenide 2 is fixedly connected with the insulating base 1, and the adjacent gallium arsenide 2 The intervals are equal, and channels are formed between adjacent gallium arsenide 2 on the insulating base 1, the two ends of the gallium arsenide 2 are flush, and the insulating medium 3 is arranged in the channel. Using processes such as photolithographic masking, electron beam evaporation or magnetron sputtering, and high-temperature annealing, an alloy electrode 4 with ohmic contact is arranged at both ends of each elongated gallium arsenide 2, and the alloy electrodes 4 at the same end of the gallium arsenide 2 are connected to each other . Thus a multi-channel gallium arsenide photoconductive switch is obtained. In the utility model, under the triggering of a suitable bias electric field and infrared laser, M conductive channels (1<M≤N) will be generated in N strips of gallium arsenide with high mobility; The resistance is 1/M of the single-channel photoconductive switch, which can obviously improve the conduction characteristics of the photoconductive switch. The total heating power of the utility model is 1/M of the single-channel photoconductive switch, and the heating power of each conductive channel is 1/M ² of the single-channel photoconductive switch, which greatly reduces the heating and thermal damage of the photoconductive switch and improves the photoelectricity. service life of the switch.

In this embodiment, the number of high-mobility GaAs 2 is fifty.

Example 2

The structure of this embodiment is the same as that of Embodiment 1, except that the number of high-mobility gallium arsenide is two.

Example 3

The structure of this embodiment is the same as that of Embodiment 1, except that the insulating medium is replaced by gaps.

Example 4

The structure of this embodiment is the same as that of Embodiment 1, except that, on the alloy electrode 4 in ohmic contact, metal leads are welded through a welding process to form a multi-channel GaAs photoconductive switch with leads.

Claims (3)

1. a multichannel GaAs photoconductive switch, is characterized in that: described photoconductivity switching comprises the alloy electrode (4) of insulating base (1), the GaAs (2) of high mobility, dielectric (3), ohmic contact; Its annexation is, described insulating base (1) is provided with the GaAs (2) of N number of strip arranged in parallel, GaAs (2) is fixedly connected with insulating base (1), spacing between adjacent GaAs (2) is equal, on insulating base (1), passage is formed between adjacent GaAs (2), the two ends of GaAs (2) flush, and described dielectric (3) is arranged in the channel; Arrange the alloy electrode (4) of ohmic contact at GaAs (2) two ends of each strip, GaAs (2) is interconnected with the alloy electrode of one end.

2. multichannel GaAs photoconductive switch according to claim 1, is characterized in that: described dielectric (3) gap substitutes.

3. multichannel GaAs photoconductive switch according to claim 1, is characterized in that: the quantitative range of the GaAs (2) of described high mobility is two to five ten.