CN204332989U - Multichannel GaAs photoconductive switch - Google Patents
Multichannel GaAs photoconductive switch Download PDFInfo
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- CN204332989U CN204332989U CN201520001528.0U CN201520001528U CN204332989U CN 204332989 U CN204332989 U CN 204332989U CN 201520001528 U CN201520001528 U CN 201520001528U CN 204332989 U CN204332989 U CN 204332989U
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Abstract
The utility model provides multichannel GaAs photoconductive switch.Insulating base in described photoconductivity switching is provided with the GaAs of N number of strip arranged in parallel, GaAs is fixedly connected with insulating base, and the spacing between adjacent GaAs is equal, and forms passage on insulating base, the two ends of GaAs flush, and dielectric is arranged in the channel.Arrange alloy electrode at GaAs two ends, GaAs is interconnected with the alloy electrode of one end.The utility model, under suitable bias field and infrared laser trigger, will produce M conductive channel (1<M≤N) in N number of GaAs; Conducting internal resistance of the present utility model is the 1/M of single channel photoconductivity switching, obviously can improve the on state characteristic of photoconductivity switching.Total heating power of the present utility model is the 1/M of single channel photoconductivity switching, and the heating power of each conductive channel is the 1/M of single channel photoconductivity switching
2, significantly reduce heating and the fire damage of photoconductivity switching, improve the useful life of photoconductivity switching.
Description
Technical field
The utility model belongs to high power semiconductor device field, is specifically related to a kind of multichannel GaAs photoconductive switch, can be used as the switch of nanosecond order high power pulse system.
Background technology
At present, GaAs photoconductive switch has been widely used in photoelectric detection equipment, Terahertz occurs and the field such as sniffer, Compact pulsed power system.But under non-linear conduction mode, high-power practical GaAs photoconductive switch exists the shortcoming that fire damage is serious, working life is short, develop low conducting internal resistance, inexorable trend that long-life high power GaAs photoconductive switch is this field.
Summary of the invention
Under non-linear conduction mode, there is the deficiency of serious fire damage during high-power operation to overcome GaAs photoconductive switch in prior art, the utility model provides a kind of multichannel GaAs photoconductive switch.The utility model, while realizing GaAs photoconductive switch high voltage, big current conducting, guarantees that GaAs photoconductive switch has higher useful life.
The utility model solves the technical scheme that its technical problem adopts:
Multichannel GaAs photoconductive switch of the present utility model, is characterized in, described photoconductivity switching comprises the alloy electrode of insulating base, the GaAs of high mobility, dielectric, ohmic contact.Its annexation is, described insulating base is provided with the GaAs of N number of strip arranged in parallel, GaAs is fixedly connected with insulating base, spacing between adjacent GaAs is equal, on insulating base, passage is formed between adjacent GaAs, the two ends of GaAs flush, and described dielectric is arranged in the channel.Adopt mask, electron beam evaporation or the technique such as magnetron sputtering, high annealing to arrange the alloy electrode of ohmic contact at the GaAs two ends of each strip, GaAs is interconnected with the alloy electrode of one end.Thus obtain multichannel GaAs photoconductive switch.
Described dielectric or alternative with gap.
The quantitative range of the GaAs of described high mobility is two to five ten.
Based on the thinking of multiple switch in parallel conducting, GaAs photoconductive switch is conducting to multichannel conducting technological leapfrogging from single channel can be realized, greatly reduce switch conduction internal resistance and fire damage, improve the useful life of GaAs photoconductive switch.Multichannel GaAs photoconductive switch of the present utility model, adopt semiconductor technology or mechanical technology, make and neatly put N number of fillet shape, the mutual disjunct single channel photoconductivity switching of GaAs material, but the anode electrode of each single channel photoconductivity switching is interconnected to form total anode, the cathode electrode of each single channel photoconductivity switching is interconnected to form total negative electrode, thus forms 1 multichannel GaAs photoconductive switch by the parallel connection of N number of single channel GaAs photoconductive switch.
The beneficial effects of the utility model are: multichannel GaAs photoconductive switch of the present utility model, under suitable bias field and infrared laser trigger, will produce M conductive channel (1<M≤N) in the GaAs of N number of strip high mobility; The conducting internal resistance of this multichannel GaAs photoconductive switch is the 1/M of single channel photoconductivity switching, obviously can improve the on state characteristic of photoconductivity switching.Total heating power of this multichannel GaAs photoconductive switch is the 1/M of single channel photoconductivity switching, and the heating power of each conductive channel is the 1/M of single channel photoconductivity switching
2, significantly reduce heating and the fire damage of photoconductivity switching, improve the useful life of photoconductivity switching.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is end view of the present utility model;
In figure, 1. insulating base 2. GaAs 3. dielectric 4. alloy electrode.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
Embodiment 1
Fig. 1 is structural representation of the present utility model, and Fig. 2 is end view of the present utility model.In Fig. 1, Fig. 2.
Multichannel GaAs photoconductive switch of the present utility model, comprises the alloy electrode 4 of insulating base 1, the GaAs 2 of high mobility, dielectric 3, ohmic contact.Its annexation is, described insulating base 1 is provided with the GaAs 2 of N number of strip arranged in parallel, GaAs 2 is fixedly connected with insulating base 1, spacing between adjacent GaAs 2 is equal, on insulating base 1, passage is formed between adjacent GaAs 2, the two ends of GaAs 2 flush, and described dielectric 3 is arranged in the channel.Adopt mask, electron beam evaporation or the technique such as magnetron sputtering, high annealing to arrange the alloy electrode 4 of ohmic contact at GaAs 2 two ends of each strip, GaAs 2 is interconnected with the alloy electrode of one end.Thus obtain multichannel GaAs photoconductive switch.The utility model, under suitable bias field and infrared laser trigger, will produce M conductive channel (1<M≤N) in the GaAs of N number of strip high mobility; Conducting internal resistance of the present utility model is the 1/M of single channel photoconductivity switching, obviously can improve the on state characteristic of photoconductivity switching.Total heating power of the present utility model is the 1/M of single channel photoconductivity switching, and the heating power of each conductive channel is the 1/M of single channel photoconductivity switching
2, significantly reduce heating and the fire damage of photoconductivity switching, improve the useful life of photoconductivity switching.
In the present embodiment, the quantity of the GaAs 2 of described high mobility is 50.
Embodiment 2
The present embodiment is identical with the structure of embodiment 1, and difference is, the quantity of the GaAs of described high mobility is two.
Embodiment 3
The present embodiment is identical with the structure of embodiment 1, and difference is, described dielectric gap substitutes.
Embodiment 4
The present embodiment is identical with the structure of embodiment 1, and difference is, on the alloy electrode 4 of ohmic contact, by welding procedure, weld metal goes between, and forms the multichannel GaAs photoconductive switch of band lead-in wire.
Claims (3)
1. a multichannel GaAs photoconductive switch, is characterized in that: described photoconductivity switching comprises the alloy electrode (4) of insulating base (1), the GaAs (2) of high mobility, dielectric (3), ohmic contact; Its annexation is, described insulating base (1) is provided with the GaAs (2) of N number of strip arranged in parallel, GaAs (2) is fixedly connected with insulating base (1), spacing between adjacent GaAs (2) is equal, on insulating base (1), passage is formed between adjacent GaAs (2), the two ends of GaAs (2) flush, and described dielectric (3) is arranged in the channel; Arrange the alloy electrode (4) of ohmic contact at GaAs (2) two ends of each strip, GaAs (2) is interconnected with the alloy electrode of one end.
2. multichannel GaAs photoconductive switch according to claim 1, is characterized in that: described dielectric (3) gap substitutes.
3. multichannel GaAs photoconductive switch according to claim 1, is characterized in that: the quantitative range of the GaAs (2) of described high mobility is two to five ten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520001528.0U CN204332989U (en) | 2015-01-05 | 2015-01-05 | Multichannel GaAs photoconductive switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520001528.0U CN204332989U (en) | 2015-01-05 | 2015-01-05 | Multichannel GaAs photoconductive switch |
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| CN204332989U true CN204332989U (en) | 2015-05-13 |
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| CN201520001528.0U Active CN204332989U (en) | 2015-01-05 | 2015-01-05 | Multichannel GaAs photoconductive switch |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538479A (en) * | 2015-01-05 | 2015-04-22 | 中国工程物理研究院流体物理研究所 | Multi-channel gallium arsenide photoconductive switch |
-
2015
- 2015-01-05 CN CN201520001528.0U patent/CN204332989U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538479A (en) * | 2015-01-05 | 2015-04-22 | 中国工程物理研究院流体物理研究所 | Multi-channel gallium arsenide photoconductive switch |
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