CN204303817U - A kind of GaAs base PHEMT epitaxial material structure of superelevation mobility - Google Patents
A kind of GaAs base PHEMT epitaxial material structure of superelevation mobility Download PDFInfo
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- CN204303817U CN204303817U CN201420769143.4U CN201420769143U CN204303817U CN 204303817 U CN204303817 U CN 204303817U CN 201420769143 U CN201420769143 U CN 201420769143U CN 204303817 U CN204303817 U CN 204303817U
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Abstract
A GaAs base PHEMT epitaxial material structure for superelevation mobility, this structure is made up of separator AlGaAs, upper planar sheet doping layers, barrier layer AlGaAs, corrosion barrier layer AlAs and highly doped cap layers GaAs between the GaAs resilient coating grown successively on gaas substrates, raceway groove lower barrierlayer AlGaAs, lower plane doped layer, lower space separator AlGaAs, channel layer InGaAs, overhead.Utilize the utility model, greatly can improve the room temperature mobilities of PHEMT material channel electronics, improve the grid leak electricity of device simultaneously and improve grid-drain breakdown voltage, also can reduce the impact on device open state resistance.
Description
Technical field
The utility model relates to compound semiconductor materials and device arts, particularly relates to a kind of GaAs (GaAs) base PHEMT epitaxial material structure of superelevation mobility.
Background technology
GaAs based pseudomorphic high electron mobility transistor (PHEMT) is a kind of compound semiconductor materials, there is the features such as high frequency, high power gain and low noise, be thus widely used in military affairs and the civil areas such as wireless telecommunications, optical-fibre communications, satellite communication, millimetre-wave radar and electronic countermeasures.The production of GaAs PHEMT epitaxial material is the important ring in whole GaAs industrial chain, and the quality of epitaxial material directly determines the important performance of final product.Conventional PHEMT epitaxial material mostly adopts the InGaAs raceway groove of In component below 0.25, and it has the advantages such as, Material growth technology maturation little with GaAs sill mismatch, but channel electron mobility receives limitation.And along with the variation of the universal of radio communication product and function, more and more higher to the requirement of GaAs PHEMT epitaxial material.The channel mobility of PHEMT epitaxial material is one of them most important index, improve direct current and radio-frequency performance that channel mobility just effectively can improve GaAs PHEMT product, it comprises the important application parameters such as mutual conductance, open state resistance, cut-off frequency, noise factor, rf gain and power conversion efficiency, significant.
Summary of the invention
The purpose of this utility model proposes a kind of GaAs base PHEMT epitaxial material structure realizing superior electron mobility, to reach the object of the important application parameter such as mutual conductance, open state resistance, cut-off frequency, noise factor, rf gain and power conversion efficiency improving PHEMT device.The change of the Material growth condition simultaneously needed for this unique design, also effectively improves grid leak electricity and the grid-drain breakdown voltage of PHEMT device.
The utility model provides a kind of GaAs (GaAs) base PHEMT epitaxial material structure of superelevation mobility, and this structure comprises separator AlGaAs6 between GaAs resilient coating 1, lower barrierlayer AlGaAs2, lower plane doped layer 3, lower space separator AlGaAs4, channel layer InGaAs5, overhead, upper planar sheet doping layers 7, upper barrier layer AlGaAs8, corrosion barrier layer AlAs9, highly doped cap layers GaAs10, GaAs substrate 11.
Specifically, GaAs substrate 11 grows successively separator AlGaAs6 between GaAs resilient coating 1, lower barrierlayer AlGaAs2, lower plane doped layer 3, lower space separator AlGaAs4, channel layer InGaAs5, overhead, on planar sheet doping layers 7, on barrier layer AlGaAs8, corrosion barrier layer AlAs9, highly doped cap layers GaAs10.
GaAs resilient coating 1 is for providing a smooth grain boundary for active layer, eliminate the impact of substrate interface state, thickness is simultaneously
extremely
Lower barrierlayer AlGaAs2, upper barrier layer AlGaAs8 form a heterojunction and are strapped in raceway groove by two-dimensional electron gas together with channel layer InGaAs5, and thickness is respectively
extremely
with
extremely
the component of Al is 0.15 to 0.28.
Lower plane doped layer 3, upper planar sheet doping layers 7 are respectively with thinking that raceway groove provides free electron.Doping carrier is donor element Si, and doping content is respectively 1E+12cm
-2with 3 to 5E+12cm
-2.
Between lower space separator AlGaAs4, overhead, the effect of separator AlGaAs6 is effectively isolated by two-dimensional electron gas in donor impurity and raceway groove, reduces impurity scattering, and improve electron mobility, thickness is
extremely
the component of Al is 0.15 to 0.28.
In channel layer InGaAs5, the component of In is 0.30 to 0.42, and thickness is
extremely
corrosion barrier layer AlAs9 provide control point, thickness for device etching process
extremely
In highly doped cap layers GaAs10, doped chemical is Si, and concentration is 4E+18 to 1E+19cm
-3, thickness is
extremely
it is prepared for device provides excellent ohmic contact, thus improves device open state resistance, and then improves the power stage of device.
Compared with prior art, the present invention has following beneficial effect.
For the PHEMT 0.1-0.25InGaAs channel layer of routine, improve the component of In to 0.30 to 0.42, the InGaAs raceway groove of high In ingredient effectively can reduce electron effective mass, strengthen the restriction to raceway groove Two-dimensional electron, reduce doping ionosphere to the scattering of channel electrons simultaneously, thus greatly improve the room temperature mobilities of channel electrons, estimating can by traditional 6000cm
2/ v.s to 8500cm
2/ more than v.s, thus provide an excellent solution for device transconductance, open state resistance, cut-off frequency, noise factor, rf gain and the isoparametric raising of power conversion efficiency.The optimization of the Material growth condition simultaneously needed for this unique design, also effectively improves grid leak electricity and the grid-drain breakdown voltage of PHEMT device.
Thick relative to routine
alAs corrode barrier layer, thick
extremely
alAs corrode barrier layer except accurate control points can be provided for device etching process, also can reduce the impact on device open state resistance simultaneously.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In figure: 1, GaAs resilient coating, 2, lower barrierlayer AlGaAs, 3, lower plane doped layer, 4, lower space separator AlGaAs, 5, channel layer InGaAs, 6, separator AlGaAs between overhead, 7, upper planar sheet doping layers, 8, upper barrier layer AlGaAs, 9, corrosion barrier layer AlAs, 10, highly doped cap layers GaAs, 11, GaAs substrate.
Embodiment
As shown in Figure 1, embodiment is described further the utility model.The utility model, on the basis of conventional PHEMT epitaxial structure, proposes the InGaAs channel layer of high In ingredient, thus greatly improves the room temperature mobilities of channel electrons, improves the grid leak electricity of device simultaneously and improves grid-drain breakdown voltage.Adopt
alAs corrode barrier layer, except accurate control points can be provided for device etching process, also can reduce the impact on device open state resistance simultaneously.
Concrete epitaxial material growth process is
(1) at SI GaAs Grown
gaAs resilient coating.
(2) grow on GaAs resilient coating
al
0.25ga
0.75as lower barrierlayer.
(3) on AlGaAs lower barrierlayer, be lower plane Si to adulterate, doping content is 1E+12cm
-2.
(4) grow in lower plane Si doping
al
0.25ga
0.75space separator under As.
(5) on the separator of lower space, growth is most critical
in
0.38ga
0.62as channel layer.
(6) at In
0.38ga
0.62as channel layer grows
al
0.25ga
0.75separator between As overhead.
(7) separator does planar S i doping between overhead, doping content is 4E+12cm
-2.
(8) grow in upper planar S i doping
al
0.25ga
0.75as barrier layer.
(9) grow on AlGaAs barrier layer
alAs corrodes barrier layer.
(10) grow in AlAs corrosion barrier layer
heavy doping GaAs cap layers, doping content is 9E+18cm
-3.
Claims (1)
1. a GaAs based PHEMT epitaxial material structure for superelevation mobility, is characterized in that: this structure comprises separator AlGaAs (6) between GaAs resilient coating (1), lower barrierlayer AlGaAs (2), lower plane doped layer (3), lower space separator AlGaAs (4), channel layer InGaAs (5), overhead, upper planar sheet doping layers (7), upper barrier layer AlGaAs (8), corrosion barrier layer AlAs (9), highly doped cap layers GaAs (10), GaAs substrate (11);
Specifically, GaAs substrate (11) grows successively separator AlGaAs (6) between GaAs resilient coating (1), lower barrierlayer AlGaAs (2), lower plane doped layer (3), lower space separator AlGaAs (4), channel layer InGaAs (5), overhead, upper planar sheet doping layers (7), upper barrier layer AlGaAs (8), corrosion barrier layer AlAs (9), highly doped cap layers GaAs (10).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420769143.4U CN204303817U (en) | 2014-12-09 | 2014-12-09 | A kind of GaAs base PHEMT epitaxial material structure of superelevation mobility |
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| CN201420769143.4U CN204303817U (en) | 2014-12-09 | 2014-12-09 | A kind of GaAs base PHEMT epitaxial material structure of superelevation mobility |
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|---|---|
| CN204303817U true CN204303817U (en) | 2015-04-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116487428A (en) * | 2023-06-25 | 2023-07-25 | 合肥芯胜半导体有限公司 | Epitaxial structure of double-layer semiconductor device, preparation method of epitaxial structure and semiconductor device |
-
2014
- 2014-12-09 CN CN201420769143.4U patent/CN204303817U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116487428A (en) * | 2023-06-25 | 2023-07-25 | 合肥芯胜半导体有限公司 | Epitaxial structure of double-layer semiconductor device, preparation method of epitaxial structure and semiconductor device |
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| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.28 factory building, supporting industrial park, export processing zone, NO.666, Jianlin Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Xinlei semiconductor technology (Suzhou) Co.,Ltd. Address before: 215151 plant D-1, export processing zone, No. 20, Datong Road, Suzhou City, Jiangsu Province Patentee before: EPI SOLUTION TECHNOLOGY CO.,LTD. |
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