CN204271445U - A kind of semiconductor laser - Google Patents
A kind of semiconductor laser Download PDFInfo
- Publication number
- CN204271445U CN204271445U CN201420758751.5U CN201420758751U CN204271445U CN 204271445 U CN204271445 U CN 204271445U CN 201420758751 U CN201420758751 U CN 201420758751U CN 204271445 U CN204271445 U CN 204271445U
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- China
- Prior art keywords
- semiconductor laser
- reshaper
- laser
- electrooptic crystal
- light emitting
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Abstract
The utility model provides a kind of semiconductor laser, and it comprises semiconductor laser light emitting chip, reshaper and electrooptic crystal; Described semiconductor laser light emitting chip connects described reshaper; Described reshaper connects described electrooptic crystal; The light of described semiconductor laser light emitting chip is exported by described electrooptic crystal after described reshaper exports.Adopt such scheme, the utility model is by controlling accordingly in laser end, realize the effect eliminating speckle, make can process laser speckle before bright dipping by the light path arranging this semiconductor laser, without the need to again laser export after extra process speckle, subsequent optical path is easy to use design, has very high market using value.
Description
Technical field
The utility model relates to semiconductor laser, in particular, and a kind of semiconductor laser.
Background technology
Along with the development of semi-conducting material, semiconductor laser can send redgreenblue visible ray, although compared with semiconductor pumped frequency multiplication semiconductor laser its spectrum width and transverse mode all poor, therefore coherence's decrease to some degree of laser, but can not avoid completely, therefore also can there is laser speckle in display frame, and this feature shows particularly evident in green semiconductor laser.
The various technology of current process laser speckle are all implemented on after laser exports, such as, the curtain that shakes, rotate the device that the technology such as scattering object all need outside plus, use design very inconvenient to subsequent optical path.
Further, the curtain that shakes needs to install vibrating motor additional on the projection screen, to large-screen dissipation spot poor effect, and can bring unavoidable vibration noise.
And increase and rotate scattering object and can increase coupling optical path light path and cause light path complicated, be unfavorable for follow-up maintenance, and dissipation spot limited efficiency.
Therefore, prior art existing defects, needs to improve.
Utility model content
The utility model provides a kind of new semiconductor laser, technical problem to be solved comprises how arranging and comprises semiconductor laser light emitting chip, reshaper, the semiconductor laser of electrooptic crystal, how semiconductor laser light emitting chip is set, reshaper, the annexation of electrooptic crystal, how the light path of this semiconductor laser is set, how to make can process laser speckle before bright dipping by the light path arranging this semiconductor laser, reprocessing laser speckle after how avoiding laser output, how to avoid affecting appreciation effect due to laser speckle, how to avoid because the curtain that shakes brings unavoidable vibration noise.Other technologies scheme of the present utility model also solves and how to be exported collimated light beam by prismatic lens, how to export collimated light beam by round rectangle lens, how to export collimated light beam by cylindroid lens, how to be selected to switch prismatic lens, round rectangle lens or cylindroid lens, how to realize the technical problems such as noiselessness heat radiation.
The technical solution of the utility model is as follows: a kind of semiconductor laser, and it comprises semiconductor laser light emitting chip, reshaper and electrooptic crystal; Described semiconductor laser light emitting chip connects described reshaper; Described reshaper connects described electrooptic crystal; The light of described semiconductor laser light emitting chip is exported by described electrooptic crystal after described reshaper exports.
Preferably, described reshaper arranges micro lens.
Preferably, described reshaper arranges prismatic lens.
Preferably, described reshaper arranges round rectangle lens.
Preferably, described reshaper arranges cylindroid lens.
Preferably, described reshaper arranges cylindrical lens.
Preferably, described semiconductor laser light emitting chip, described reshaper, described electrooptic crystal are fixedly installed on an enclosure interior respectively.
Preferably, described electrooptic crystal connects voltage controller.
Preferably, described voltage controller arranges variable resistance.
Preferably, described electrooptic crystal connects two metal electrodes respectively.
Adopt such scheme, the utility model is by controlling accordingly in laser end, realize the effect eliminating speckle, make can process laser speckle before bright dipping by the light path arranging this semiconductor laser, without the need to again laser export after extra process speckle, subsequent optical path is easy to use design, has very high market using value.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of an embodiment of the present utility model;
Fig. 2 is the light path schematic diagram of Fig. 1;
Fig. 3 is the schematic diagram of another embodiment of the present utility model;
Fig. 4 is that the round rectangle of an embodiment of the present utility model exports collimated light beam schematic diagram;
Fig. 5 is that the rectangle of cutting sth. askew of another embodiment of the present utility model exports collimated light beam schematic diagram.
Embodiment
For the ease of understanding the utility model, below in conjunction with the drawings and specific embodiments, the utility model is described in detail.It should be noted that, when element is stated " being fixed on " another element, it can directly on another element or can there is one or more element placed in the middle therebetween.When an element is stated " connection " another element, it can be directly connected to another element or can there is one or more element placed in the middle therebetween.The term " vertical " that this specification uses, " level ", "left", "right" and similar statement are just for illustrative purposes.
Unless otherwise defined, all technology of using of this specification and scientific terminology are identical with belonging to the implication that those skilled in the art of the present utility model understand usually.The object of the term used in specification of the present utility model in this specification just in order to describe specific embodiment is not for limiting the utility model.The term "and/or" that this specification uses comprises arbitrary and all combinations of one or more relevant Listed Items.
As shown in Figure 1, an embodiment of the present utility model is, a kind of semiconductor laser, and it comprises semiconductor laser light emitting chip 101, reshaper 102, electrooptic crystal (electro-optical crystal) 106; Wherein, reshaper and beam shaping, for the laser exported by semiconductor laser light emitting chip, be shaped as collimated light beam; Described semiconductor laser light emitting chip connects described reshaper; Described reshaper connects described electrooptic crystal; The light of described semiconductor laser light emitting chip is exported by described electrooptic crystal after described reshaper exports, such as Output of laser 107.Like this, by controlling accordingly in laser end, realizing the effect eliminating speckle, making can process laser speckle before bright dipping by the light path arranging this semiconductor laser, without the need to again laser export after extra process speckle, subsequent optical path be easy to use design.
Such as, a kind of semiconductor laser, it comprises semiconductor laser light emitting chip, reshaper, electrooptic crystal that order is arranged, and as shown in Figure 2, the light of described semiconductor laser light emitting chip is exported by described electrooptic crystal its light path after described reshaper exports.In order to reduce the volume of described semiconductor laser and alleviate its weight, preferably, described reshaper arranges micro lens.Preferably, described micro lens is non-spherical lens; Such as, described micro lens comprises prismatic lens, round rectangle lens, rectangular lens of cutting sth. askew and/or cylindroid lens etc.
In order to solve the technical problem how exporting collimated light beam, preferably, described reshaper arranges prismatic lens, to export collimated light beam.And for example, as shown in Figure 4, described reshaper arranges round rectangle lens.And for example, as shown in Figure 5, described reshaper arranges rectangular lens of cutting sth. askew.And for example, described reshaper arranges cylindroid lens, to export collimated light beam.And for example, described reshaper arranges cylindrical lens, to export collimated light beam.Like this, various ways can be adopted to export collimated light beam.Preferably, described reshaper is selected to arrange described prismatic lens, described round rectangle lens or described cylindroid lens.
In order to solve the technical problem of how water proof and dust proof, preferably, described housing seal is arranged; In order to solve the technical problem how being fixedly mounted described solid state laser by described housing, preferably, described housing arranges installation position, for fixedly mounting described solid state laser.
In order to solve technical problem that is how easy to use, mobile and that install, preferably, as shown in Figure 3, it is inner that described semiconductor laser light emitting chip 101, described reshaper 102, described electrooptic crystal 106 are fixedly installed on a housing 100 respectively.Like this, each parts form an entirety, are easy to use, move and install; Also follow-up maintenance is conducive to.
In order to solve the technical problem of the laser how obtaining random phase, preferably, described electrooptic crystal connects voltage controller.Such as, described voltage controller arranges variable resistance.And for example, described electrooptic crystal connects two metal electrodes respectively, connects variable resistance and/or voltage controller by these two metal electrodes.Like this, along with the voltage of adjustment electrooptic crystal, electrooptic crystal changes the laser phase of process through applying voltage, just can be obtained the laser of random phase by the voltage loaded on electrooptic crystal.Preferably, described voltage controller also arranges an adjuster, and it connects described variable resistance, for regulating the resistance value of variable resistance, thus the voltage of adjustment electrooptic crystal.Such as, described adjuster is one group of electric-controlled switch, and it connects the distinct locations of variable resistance.And for example, described adjuster is an existing automatically controlled adjuster, and it connects variable resistance.Like this, the voltage of electrooptic crystal can be adjusted simply, easily.
In order to solve the technical problem of how efficiently radiates heat, preferably, described housing arranges some louvres.Such as, each described louvre is at least distributed in two sides of described housing.Preferably, each described louvre is at least distributed in the relative side of two of described housing.Like this, not only effectively enhance radiating effect, but also realize noiselessness heat radiation.In order to solve the technical problem of filter dust, preferably, described louvre inside arranges one deck screen pack, like this, can obtain good cleaning inside effect.For the ease of cleaning, preferably, described screen pack is detachably arranged in described louvre; Such as, described screen pack clamping is fixed in described louvre; Such as, described louvre is circular, and described screen pack is also circular, and its aperture, slightly larger than the aperture of described louvre, is installed to embed and is fixed in described louvre; Preferably, described screen pack also has a housing, and its aperture is greater than the aperture of described louvre, to make described screen pack indwelling in described louvre outside and described outside, in order to avoid be absorbed in described enclosure interior when installing described screen pack.
Another example is, a kind of semiconductor laser of Output of laser phase-adjustable joint, comprises semiconductor laser light emitting chip, reshaper, laser crystal, nonlinear crystal, outgoing mirror, electrooptic crystal.The laser that described laser crystal, nonlinear crystal and outgoing mirror export from the outgoing mirror of laserresonator is through electrooptic crystal, electrooptic crystal changes the laser phase of process through applying voltage, just can be obtained the laser of random phase by the voltage loaded on electrooptic crystal.The laser exporting random phase is used for laser display and effectively can suppresses laser speckle.Like this, can replace the speckle device that disappears of existing projection end, simplify laser coupled light path, laser projection screen no longer needs to increase attachment device, and the design facing to whole optical projection system all serves positive role.
Such as, semiconductor laser order arranges semiconductor laser light emitting chip, reshaper, laser crystal, nonlinear crystal, outgoing mirror (i.e. laser outgoing mirror), electrooptic crystal, and the light of described pumping source outputs to described laser crystal, described nonlinear crystal, described outgoing mirror, described electrooptic crystal exporting through described pump light reshaper.Wherein, laser crystal, nonlinear crystal and laser output mirror form laser resonator.Semiconductor laser light emitting chip incides laser crystal through reshaper, encourages laserresonator, and the fundamental frequency light that laser crystal is formed is via nonlinear crystal intracavity frequency doubling, and double-frequency laser is by outside outgoing mirror Output of laser resonator.The laser exported from laserresonator is through electrooptic crystal, and electrooptic crystal changes the laser phase of process through applying voltage, just can be obtained the laser of random phase by the voltage loaded on electrooptic crystal.
Further, embodiment of the present utility model also comprises, each technical characteristic of the various embodiments described above, the semiconductor laser of the semiconductor laser be mutually combined to form or Output of laser phase-adjustable joint, like this, by controlling accordingly in laser end, utilizing laser phase stochastic controllability matter to realize eliminating the effect of speckle, there is very high market using value.
It should be noted that, preferred embodiment of the present utility model is given in specification of the present utility model and accompanying drawing thereof, but, the utility model can be realized by many different forms, be not limited to the embodiment described by this specification, these embodiments not as the extra restriction to the utility model content, provide the object of these embodiments be make the understanding of disclosure of the present utility model more comprehensively thorough.Further, above-mentioned each technical characteristic continues combination mutually, is formed not in above-named various embodiment, is all considered as the scope that the utility model specification is recorded; Further, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection range that all should belong to the utility model claims.
Claims (10)
1. a semiconductor laser, is characterized in that, comprises semiconductor laser light emitting chip, reshaper and electrooptic crystal;
Described semiconductor laser light emitting chip connects described reshaper;
Described reshaper connects described electrooptic crystal;
The light of described semiconductor laser light emitting chip is exported by described electrooptic crystal after described reshaper exports.
2. semiconductor laser according to claim 1, it is characterized in that, described reshaper arranges micro lens.
3. semiconductor laser according to claim 2, it is characterized in that, described reshaper arranges prismatic lens.
4. semiconductor laser according to claim 2, it is characterized in that, described reshaper arranges round rectangle lens.
5. semiconductor laser according to claim 2, it is characterized in that, described reshaper arranges cylindroid lens.
6. semiconductor laser according to claim 2, it is characterized in that, described reshaper arranges cylindrical lens.
7. semiconductor laser according to claim 1, it is characterized in that, described semiconductor laser light emitting chip, described reshaper, described electrooptic crystal are fixedly installed on an enclosure interior respectively.
8. according to the arbitrary described semiconductor laser of claim 1 to 7, it is characterized in that, described electrooptic crystal connects voltage controller.
9. semiconductor laser according to claim 8, it is characterized in that, described voltage controller arranges variable resistance.
10. semiconductor laser according to claim 9, it is characterized in that, described electrooptic crystal connects two metal electrodes respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420758751.5U CN204271445U (en) | 2014-12-05 | 2014-12-05 | A kind of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420758751.5U CN204271445U (en) | 2014-12-05 | 2014-12-05 | A kind of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204271445U true CN204271445U (en) | 2015-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420758751.5U Expired - Fee Related CN204271445U (en) | 2014-12-05 | 2014-12-05 | A kind of semiconductor laser |
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| Country | Link |
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| CN (1) | CN204271445U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105120188A (en) * | 2015-10-08 | 2015-12-02 | 杭州虹视科技有限公司 | Laser scanner and laser display system |
| CN105158922A (en) * | 2015-10-09 | 2015-12-16 | 杭州虹视科技有限公司 | Laser device, laser display system, and laser projection system capable of eliminating speckles |
| CN105357454A (en) * | 2015-10-08 | 2016-02-24 | 杭州虹视科技有限公司 | Laser scanning device and laser display system |
-
2014
- 2014-12-05 CN CN201420758751.5U patent/CN204271445U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105120188A (en) * | 2015-10-08 | 2015-12-02 | 杭州虹视科技有限公司 | Laser scanner and laser display system |
| CN105357454A (en) * | 2015-10-08 | 2016-02-24 | 杭州虹视科技有限公司 | Laser scanning device and laser display system |
| CN105158922A (en) * | 2015-10-09 | 2015-12-16 | 杭州虹视科技有限公司 | Laser device, laser display system, and laser projection system capable of eliminating speckles |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150415 Termination date: 20161205 |
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| CF01 | Termination of patent right due to non-payment of annual fee |