CN204230294U - A kind of infrarede emitting diode encapsulating structure - Google Patents
A kind of infrarede emitting diode encapsulating structure Download PDFInfo
- Publication number
- CN204230294U CN204230294U CN201420627901.9U CN201420627901U CN204230294U CN 204230294 U CN204230294 U CN 204230294U CN 201420627901 U CN201420627901 U CN 201420627901U CN 204230294 U CN204230294 U CN 204230294U
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- infrarede emitting
- encapsulating structure
- diode chip
- cup type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Abstract
The utility model discloses a kind of infrarede emitting diode encapsulating structure, comprise fixed mount, the infrarede emitting diode chip be arranged on fixed mount, wrap up described infrarede emitting diode chip surface photic zone and penetrate photic zone and make infrarede emitting diode chip be connected to positive wire and the cathode conductor of power supply, it is characterized in that: described photic zone comprises by the stacking seal closure of multiple transparent cylindrical body and the transparent optically focused dielectric layer being filled in seal closure and infrarede emitting diode chip chamber; Described its external diameter of multiple cylindrical body successively decreases from the bottom to top; In the cylindrical body at described seal closure top, bottom surface is provided with the transparent cone that a bottom surface radius equals this cylindrical body external diameter.
Description
Technical field
The utility model relates to infrarede emitting diode technical field, is specifically related to a kind of infrarede emitting diode encapsulating structure.
Background technology
Infrarede emitting diode can produce infrared radiation when being energized, and because infrared radiation is high by the impact of nature visible ray, signal to noise ratio, usually coordinates with infrared receiving diode for fields such as in-plant transfer of data, signal controlling.Existing infrarede emitting diode encapsulating structure comprises a fixed mount mostly, the infrarede emitting diode chip be arranged in fixed mount, one hemispheric transparent epoxy resin is wrapped in outside chip, ball top is corresponding with the center at chip light emitting position, and chip is connected in circuit by the wire penetrating epoxy resin.At practical application weight, due to the distortion of epoxy resin shape and the impact of epoxy resin microcosmic crystal formation, its shooting angle of infrared tube after epoxy resin refraction is deflected, affects the acceptance of infrared receiving diode to signal.Along with the increase of the distance of infrarede emitting diode and reception diode, infrared light more and more will depart from infrared receiving diode, the information finally making infrared receiving diode cannot receive it to carry.The problem that the infrared radiation angle precision that above-mentioned infrarede emitting diode produces is low, limits the major obstacle of existing infrarede emitting diode for telecommunication just.Particularly epoxy resin Long-Time Service is easily aging, makes its inner crackle produced in various degree, the degree of the above-mentioned infrared radiation angular deflection of aggravation further.
Utility model content
In view of this, the utility model discloses the accurate infrarede emitting diode encapsulating structure of a kind of infrared light angle of radiation.The purpose of this utility model is achieved through the following technical solutions:
A kind of infrarede emitting diode encapsulating structure, comprise fixed mount, the infrarede emitting diode chip be arranged on fixed mount, wrap up described infrarede emitting diode chip surface photic zone and penetrate photic zone and infrarede emitting diode chip be connected to positive wire and the cathode conductor of power supply, described photic zone comprises by the stacking seal closure of multiple transparent cylindrical body and the transparent optically focused dielectric layer being filled in seal closure and infrarede emitting diode chip chamber; Described its external diameter of multiple cylindrical body successively decreases from the bottom to top; In the cylindrical body at described seal closure top, bottom surface is provided with the transparent cone that a bottom surface radius equals this cylindrical body external diameter.
In the utility model, light-emitting diode chip for backlight unit and transparent optically focused dielectric layer are mainly wrapped up in the effect of described seal closure.Described transparent optically focused dielectric layer can be made the transparent medium of preferred any one high printing opacity, and the infrared light that operationally diode chip for backlight unit produces can fill in whole transparent dielectric layer, and enters equably in seal closure.The cylindrical body that seal closure of the present utility model is successively decreased from the bottom to top by multiple external diameter is simultaneously formed, infrared light is radiated to after among seal closure from transparent dielectric layer, due to infrared light have duality principle, infrared light will be aggregated and vertically radiation in seal closure from bottom to top, reduce the refraction angle of infrared light in seal closure, make the infrared light penetrating seal closure farthest perpendicular to diode chip for backlight unit, and be gathered in axle center place.Meanwhile, the upper surface of each cylindrical body can give off the infrared light of a ring-type, increases the radiation scope of infrared light.The transparent cone on top can assemble the infrared light of the cylindrical body upper bottom surface at seal closure top, prevents its scattering, thus strengthens the infrared light radiation intensity in centre, improves the radiation length of infrared light further.In in-plant communication, the ring-type infrared light given off due to multiple cylindrical body end face has larger radiation scope, has namely expanded the Received signal strength scope of reception diode, without the need to reception diode is aimed at infrarede emitting diode chip completely.And in remote communication, because infrared light can be gathered in axle center place by seal closure, make the infrared light centre radiation intensity that gives off higher, and perpendicular to infrarede emitting diode chip.Only reception diode need be arranged on the position perpendicular to infrarede emitting diode chip, just can carry out with it the data of communications reception infrared light lift-launch in the least without barrier.
Described fixed mount comprises a cup type body, and described cup type body inner wall surface is provided with reflector layer; Described cup type body inwall is also provided with multiple ring-type condenser groove body concentric with cup type; The cross section of described condenser groove is semicircle; The radius in described multiple condenser groove cross section increases progressively from the bottom to top.
In the utility model, described fixed mount is in fact existing glow cup, can draw the infrared light of scattering in, makes it to be gathered in light-emitting diode chip for backlight unit center, improves the precision of the angle of radiation of infrared light.For improving the spotlight effect of cup type body, cup type body inwall is also provided with ring-type condenser groove, semicircular condenser groove can increase the area of reflects infrared light, and after making reflection, infrared light goes out with the angle radiation perpendicular to light-emitting diode chip for backlight unit as far as possible, prevents the infrared light deflection of reflecting.
Further, the inwall of cup type body bottom extends the fixed bridge of multiple rectangle to the center of cup type body, described multiple fixed bridge by described infrarede emitting diode chip support in the middle part of cup type body; Also comprise the multiple draining rings being arranged on below fixed bridge, connecting described multiple fixed bridge; Described draining ring is concentric with described cup type body; The upper surface of described fixed bridge and described draining ring is equipped with corrugated choked flow groove.
The mode that infrarede emitting diode chip can adopt glue to bond is fixed on fixed bridge, and described choked flow groove can fix glue, prevents uncured glue flowing from causing infrarede emitting diode to slide and deviation position.
Further, the side of described transparent cone there is multiple guide-lighting groove arranged along its bus.
Guide-lighting groove is be inscribed in the v-depression on transparent cone side, according to the duality principle of light, guide-lighting groove can correct the radiation direction of infrared light in transparent cone, makes it the top being finally gathered in cone, and to go out perpendicular to the angle radiation of infrarede emitting diode chip.
Particularly preferred, described transparent optically focused dielectric layer is that high printing opacity makrolon material is made, and described high its raw material of printing opacity makrolon material comprises the Graphene of 50 ~ 70 parts of Merlon, 0.1 ~ 0.2 part of fire retardant, 0.5 ~ 0.9 part of compatilizer and 0.4 ~ 1 part by weight.
Transparent optically focused dielectric layer is designed to the Merlon of high printing opacity by the utility model especially, the arrangement of its molecular structure of Merlon is comparatively neat, be approximately a kind of stratiform, linear arrangement mode, the infrared light entered in makrolon material can be made to transmit along certain direction.And Graphene has neat individual layer sheet layer structure especially, when graphene dispersion is in Merlon, due to the effect of Van der Waals force between Graphene (van der waals force), Graphene will be dispersed in Merlon in parallel to each other, guide infrared light to conduct along certain direction.More preferred; the utility model selects the Graphene of sulfonylation process; such as with the Graphene (specifically see Ping Wen, the people such as Peiwei Gong are published in " the Scalable fabrication of high quality graphene by exfoliation of edge sulfonated graphite for supercapacitor application " of RSC Advances periodical in July, 2014) of tosyl.Sulfonyl, for providing stronger Van der Waals force between graphene molecules, contributes on the one hand keeping layered arrangement shape body parallel between Graphene in Merlon, also contributes on the other hand improving the dispersiveness of Graphene in Merlon, prevent it from precipitating.Graphene can make infrared light be blocked, and therefore the utility model is particularly limited to the concentration of Graphene, farthest improves the directed radiation of infrared light while report makrolon material light transmission.Described fire retardant, compatilizer all can select commercially available Merlon fire retardant and compatilizer to realize.Compatilizer is mainly used in connecting Merlon molecule and graphene molecules, keeps the stability of Graphene-polycarbonate system.The flaws such as in addition, utility model people finds that the makrolon material being added with Graphene has outstanding ageing resistace, and Long-Time Service still has good light transmittance, flawless, atomization produce.
Further, the utility model also provides a kind of method preparing described infrarede emitting diode encapsulating structure, specifically comprises the following steps:
A. the infrarede emitting diode chip with positive wire and cathode conductor is fixed on the end of described multiple fixed bridge;
B. heat described high printing opacity makrolon material, make it fusing; The high printing opacity makrolon material of full described fusing is filled in seal closure, described seal closure is tipped upside down on infrarede emitting diode chip, compress and make infrarede emitting diode chip be absorbed in described seal closure, and make the end of described positive wire and cathode conductor exposed outside at seal closure, make encapsulating structure base substrate;
C. described encapsulating structure base substrate is placed in low-temperature cold water to cool;
D. by described encapsulating structure base substrate baking and curing, obtained described infrarede emitting diode encapsulating structure.
In the utility model, draining ring and choked flow groove can make the high printing opacity makrolon material of molten state firmly, equably adhere to, prevent makrolon material flowing, distortion in the operation of follow-up compression, cause the high printing opacity makrolon material Density inhomogeneity in seal closure, there is the flaws such as bubble.
Describedly described encapsulating structure base substrate is placed in low-temperature cold water cooling and refers to the low-temperature cold water cooling 5 ~ 10S described encapsulating structure base substrate being placed in 1 ~ 3 DEG C.
Packaged base substrate is placed in low-temperature cold water to cool momently and contribute to fixing high printing opacity Merlon Graphene, prevents Graphene in temperature-fall period slowly from violent Brownian movement occurring and affects its intermolecular neat arrangement mode.In addition, the K cryogenic treatment of short time also contributes to the shape of fixing high printing opacity Merlon, prevents it from cooling procedure slowly, deformation occurring, even oozes out seal closure.
Described encapsulating structure base substrate to be placed under the no light condition of 30 ~ 35 DEG C of temperature baking and curing 1 ~ 3 hour by described described encapsulating structure base substrate baking and curing being referred to.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the euphotic profile of the utility model.
Fig. 3 is the partial enlarged drawing of the utility model cone.
Fig. 4 is the profile of the utility model fixed mount.
Fig. 5 is the vertical view of the utility model fixed mount.
Embodiment
The utility model to be described in further detail below in conjunction with accompanying drawing and embodiment for the ease of it will be appreciated by those skilled in the art that:
Embodiment 1
The present embodiment provides a kind of infrarede emitting diode encapsulating structure, as depicted in figs. 1 and 2, comprise fixed mount 1, the infrarede emitting diode chip 2 be arranged on fixed mount, wrap up described infrarede emitting diode chip surface photic zone and penetrate photic zone and infrarede emitting diode chip be connected to positive wire and the cathode conductor of power supply, described photic zone comprises by the stacking seal closure of 3 transparent cylindrical body and the transparent optically focused dielectric layer 4 being filled in seal closure 3 and infrarede emitting diode chip chamber; Described 3 its external diameters of cylindrical body successively decrease from the bottom to top; In the cylindrical body at described seal closure top, bottom surface is provided with the transparent cone 31 that a bottom surface radius equals this cylindrical body external diameter.
for different designs, the infrarede emitting diode encapsulating structure that also the utility model can be provided connects for strip, for being arranged on lamp bar (light bar) wiring board.Above-mentioned connection can adopt and is fixed on line style fixed mount successively by encapsulating structure or adopts adhesive the mode that multiple encapsulating structure bonding is got up to be realized.In addition, multiple lamp bar can communicate to connect with same MPD, and MPD can control separately the opening and closing of LED on any one lamp bar.
In the present embodiment, as Fig. 3, the side of described transparent cone 31 there are 4 guide-lighting grooves 311 arranged along its bus.
As Fig. 4 and Fig. 5, in the present embodiment, fixed mount comprises a cup type body 11, and described cup type body inner wall surface is provided with reflector layer; Described cup type body inwall is also provided with 4 and the body concentric ring-type condenser groove 12 of cup type; The cross section of described condenser groove is semicircle; The radius in described 4 condenser groove cross sections increases progressively from the bottom to top.
Further, the inwall of cup type body bottom extends the fixed bridge 13 of 2 rectangles to the center of cup type body, described multiple fixed bridge by described infrarede emitting diode chip support in the middle part of cup type body; Also comprise and to be arranged on below fixed bridge, will multiple draining rings 14 of described multiple fixed bridge to be connected; Described draining ring is concentric with described cup type body; The upper surface of described fixed bridge and described draining ring is equipped with corrugated choked flow groove.
Especially, described transparent dielectric layer is commercially available Merlon.Described seal closure is made up of commercially available Merlon, and above-mentioned reflector layer is titania coating layer.
Embodiment 2
The present embodiment is for a kind of infrarede emitting diode encapsulating structure, and its structure is consistent with embodiment 1.In the present embodiment, described transparent optically focused dielectric layer is that high printing opacity makrolon material is made, and described high its raw material of printing opacity makrolon material comprises the Graphene of 60 parts of Merlon, 0.1 part of fire retardant, 0.9 part of compatilizer and 0.4 part by weight.
In the present embodiment, described Graphene is the Graphene with tosyl.
The method of the present embodiment infrarede emitting diode encapsulating structure, specifically comprises the following steps:
A. the infrarede emitting diode chip with positive wire and cathode conductor is fixed on the end of described multiple fixed bridge;
B. heat described high printing opacity makrolon material, make it fusing; The high printing opacity makrolon material of full described fusing is filled in seal closure, described seal closure is tipped upside down on infrarede emitting diode chip, compress and make infrarede emitting diode chip be absorbed in described seal closure, and make the end of described positive wire and cathode conductor exposed outside at seal closure, make encapsulating structure base substrate;
C. described encapsulating structure base substrate is placed in low-temperature cold water to cool;
D. by described encapsulating structure base substrate baking and curing, obtained described infrarede emitting diode encapsulating structure.
Further, describedly described encapsulating structure base substrate is placed in low-temperature cold water cooling and refers to that the low-temperature cold water described encapsulating structure base substrate being placed in 1 DEG C cools 6S.
Further, described encapsulating structure base substrate to be placed under the no light condition of 30 ~ 35 DEG C of temperature baking and curing 2 hours by described described encapsulating structure base substrate baking and curing being referred to.
In the present embodiment, above-mentioned reflector layer is titania coating layer
Embodiment 3
The present embodiment is for a kind of infrarede emitting diode encapsulating structure, and its structure is consistent with embodiment 1.In the present embodiment, described transparent optically focused dielectric layer is that high printing opacity makrolon material is made, and described high its raw material of printing opacity makrolon material comprises the Graphene of 70 parts of Merlon, 0.2 part of fire retardant, 0.8 part of compatilizer and 0.9 part by weight.
In the present embodiment, described Graphene is commercially available commercial graphite alkene.
The preparation method of the present embodiment infrarede emitting diode encapsulating structure is consistent with embodiment 2.
Embodiment 4
The present embodiment is for a kind of infrarede emitting diode encapsulating structure, and its structure is consistent with embodiment 1.In the present embodiment, described transparent optically focused dielectric layer is commercially available transparent epoxy resin.
Comparative example 1
This comparative example provides a kind of infrarede emitting diode encapsulating structure, and it comprises reflector, and is arranged on the infrarede emitting diode chip at reflector center.Infrarede emitting diode chip is coated with hemispheric epoxy resin layer.
Comparative example 2
This comparative example provides a kind of infrarede emitting diode encapsulating structure, and it comprises reflector, and is arranged on the infrarede emitting diode chip at reflector center.Infrarede emitting diode chip is coated with the epoxy resin layer of cylindricality.
Short-range communication mid-infrared light angle of radiation is tested
Infrarede emitting diode encapsulating structure is established in a plane.Select the infrared receiving diode that is commercially available, place it in, 5 meters, infrarede emitting diode encapsulating structure front.The power of infrarede emitting diode is 50mw, and wavelength is 830 ~ 850nm.Infrared receiving diode is moved left and right along the plane that is parallel to infrarede emitting diode encapsulating structure, and record infrared receiving diode can receive high order end and the low order end of infrared signal, records the greatest irradiation angle of infrarede emitting diode encapsulating structure.Its result is as shown in table 1.
Table 1 greatest irradiation angle
| Experimental group | Greatest irradiation angle (°) |
| Embodiment 1 | 101 |
| Embodiment 2 | 102 |
| Embodiment 3 | 93 |
| Embodiment 4 | 88 |
| Comparative example 1 | 20 |
| Comparative example 2 | 39 |
Effective communication distance is tested
Infrarede emitting diode encapsulating structure is erected in a plane.Select the infrared receiving diode that is commercially available, place it in infrarede emitting diode encapsulating structure dead ahead centerline.The power of infrarede emitting diode is 50mw, and wavelength is 830 ~ 850nm.Infrared receiving diode is moved along described center line, and record can accept the maximum distance of infrared signal.Under infrarede emitting diode encapsulating structure being exposed to the UV-irradiation of wavelength 240 ~ 500nm, radiation intensity is 50j/cm again
2, process 300 hours.Again test its communication distance farthest.Its result is as shown in table 2.
Table 2 is communication distance farthest
Be more than wherein specific implementation of the present utility model, it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these apparent replacement forms all belong to protection range of the present utility model.
Claims (4)
1. an infrarede emitting diode encapsulating structure, comprise fixed mount (1), the infrarede emitting diode chip (2) be arranged on fixed mount, wrap up described infrarede emitting diode chip surface photic zone and penetrate photic zone and infrarede emitting diode chip be connected to positive wire and the cathode conductor of power supply, it is characterized in that: described photic zone comprises by the stacking seal closure of multiple transparent cylindrical body and the transparent optically focused dielectric layer (4) being filled in seal closure (3) and infrarede emitting diode chip chamber; Described its external diameter of multiple cylindrical body successively decreases from the bottom to top; In the cylindrical body at described seal closure top, bottom surface is provided with the transparent cone (31) that a bottom surface radius equals this cylindrical body external diameter.
2. infrarede emitting diode encapsulating structure according to claim 1, is characterized in that: described fixed mount comprises a cup type body (11), and described cup type body inner wall surface is provided with reflector layer; Described cup type body inwall is also provided with multiple ring-type condenser groove (12) body concentric with cup type; The cross section of described condenser groove is semicircle; The radius in described multiple condenser groove cross section increases progressively from the bottom to top.
3. infrarede emitting diode encapsulating structure according to claim 2, it is characterized in that: the inwall of cup type body bottom extends the fixed bridge (13) of multiple rectangle to the center of cup type body, described multiple fixed bridge by described infrarede emitting diode chip support in the middle part of cup type body; Also comprise and to be arranged on below fixed bridge, will multiple draining rings (14) of described multiple fixed bridge to be connected; Described draining ring is concentric with described cup type body; The upper surface of described fixed bridge and described draining ring is equipped with corrugated choked flow groove.
4. infrarede emitting diode encapsulating structure according to claim 1, is characterized in that: the side of described transparent cone (31) has multiple guide-lighting groove (311) arranged along its bus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420627901.9U CN204230294U (en) | 2014-10-24 | 2014-10-24 | A kind of infrarede emitting diode encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420627901.9U CN204230294U (en) | 2014-10-24 | 2014-10-24 | A kind of infrarede emitting diode encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204230294U true CN204230294U (en) | 2015-03-25 |
Family
ID=52928354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420627901.9U Withdrawn - After Issue CN204230294U (en) | 2014-10-24 | 2014-10-24 | A kind of infrarede emitting diode encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204230294U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332551A (en) * | 2014-10-24 | 2015-02-04 | 深圳莱特光电有限公司 | Infrared light-emitting diode packaging structure and preparation method thereof |
-
2014
- 2014-10-24 CN CN201420627901.9U patent/CN204230294U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332551A (en) * | 2014-10-24 | 2015-02-04 | 深圳莱特光电有限公司 | Infrared light-emitting diode packaging structure and preparation method thereof |
| CN104332551B (en) * | 2014-10-24 | 2017-04-05 | 深圳莱特光电股份有限公司 | A kind of infrarede emitting diode encapsulating structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104062807B (en) | Light-emitting unit and sideward light emitting type liquid crystal display with light-emitting unit | |
| CN2911390Y (en) | LED bulbs | |
| CN204230294U (en) | A kind of infrarede emitting diode encapsulating structure | |
| CN105953101A (en) | LED bulb lamp with high heat dispersion performance | |
| CN205669770U (en) | A kind of compound Fresnel Lenses being applicable to navigation light Optical devices | |
| CN104332551A (en) | Infrared light-emitting diode packaging structure and preparation method thereof | |
| CN103017084B (en) | Secondary optical lens for light emitting diode (LED) wide-angle bulb lamp and LED wide-angle bulb lamp | |
| CN102646784B (en) | Light emitting diode device | |
| CN102230592A (en) | Reflector lamp assembly with Fresnel lens | |
| CN203297983U (en) | LED lamp tube | |
| CN109030380A (en) | A kind of detection method and device of the nanocrystalline Random Laser emission mechanism of perovskite | |
| CN206018318U (en) | A kind of LEDbulb lamp of easy heat radiation low cost | |
| CN104916198A (en) | Self-focusing lens light-concentrating principle simulation demonstration device and experimental method | |
| CN105896311B (en) | A kind of white light laser closing beam technology based on semiconductor laser | |
| CN101694273A (en) | Light-emitting diode (LED) of heat-radiating ring-groove | |
| CN208936070U (en) | High beam mould group and car light | |
| CN104482476A (en) | LED (light emitting diode) headlamp light distribution system | |
| CN101140965A (en) | Semiconductor light-emitting diode without bracket | |
| CN103672507A (en) | LED COB quartz lamp and manufacture method thereof | |
| CN208078376U (en) | 3 temperature-compensating 473nm blue light continuous wave lasers | |
| CN203674253U (en) | LED packaging structure | |
| CN207006050U (en) | A kind of collimated illumination reflector and collimated illumination system for LIF | |
| CN208719902U (en) | Bulb lamp | |
| CN206247118U (en) | LED beam pattern lamp | |
| CN104456206B (en) | Lens and there is the light adjusting system of these lens |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518000, 95, Fifth Industrial Zone, Mashan village, Gongming Town, Shenzhen, Guangdong, Baoan District Patentee after: SHENZHEN LIGHT ELECTRONICS CO., LTD. Address before: 518000, 95, Fifth Industrial Zone, Mashan village, Gongming Town, Shenzhen, Guangdong, Baoan District Patentee before: Shenzhen LIGHT Electronics Co., Ltd. |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20150325 Effective date of abandoning: 20170405 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20150325 Effective date of abandoning: 20170405 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |