CN204209844U - A kind of novel sheave for ultra thin silicon wafers cutting - Google Patents
A kind of novel sheave for ultra thin silicon wafers cutting Download PDFInfo
- Publication number
- CN204209844U CN204209844U CN201420653613.0U CN201420653613U CN204209844U CN 204209844 U CN204209844 U CN 204209844U CN 201420653613 U CN201420653613 U CN 201420653613U CN 204209844 U CN204209844 U CN 204209844U
- Authority
- CN
- China
- Prior art keywords
- sheave
- afterbody
- main body
- head
- wiring groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 235000012431 wafers Nutrition 0.000 title claims abstract description 13
- 229910000831 Steel Inorganic materials 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The utility model discloses a kind of novel sheave for ultra thin silicon wafers cutting, it comprises cylindrical groove wheel body, the side of described sheave main body there is circular wiring groove by head to afterbody is evenly distributed, increases progressively L by head successively to the described circular wiring groove bottom land of afterbody to the axial line distance of sheave main body.Advantage is: effectively reduce the situation that sheave afterbody silicon chip total thickness variations is large, ensure that the thickness cutting overall silicon chip is evenly distributed, thus improves the quality of silicon chip.
Description
Technical field:
The utility model relates to solar silicon wafers process equipment, particularly relates to a kind of solar silicon wafers Linear cut sheave.
Background technology:
In solar energy industry, section link is as most important Morphological Transitions link, also more and more higher to the requirement of silicon chip surface quality, original " reciprocating cutting " technology, because steel wire is in reciprocating motion, the sheave rotated can carry out the buffer time of acceleration and deceleration in steering procedure, cause forming periodicity in the unit interval, thus solar silicon wafers surface cause cause surface parameter higher compared with deep line, therefore each enterprise is for better meeting customer demand present stage, change cutting mode, original " reciprocating cutting " mode is changed to " unidirectional cutting ", by the trend of steel wire by cutting top to end along a direction cabling, eliminate the Acceleration and deceleration time of main shaft.To obtain better finished surface.Because new line is by head lambda line in " unidirectional cutting ", afterbody outlet, cause head steel wire wire diameter thick, afterbody steel wire attenuates at diameter after the silicon grinding abrasion of certain distance, simultaneously for reducing broken string risk, afterbody tension force setting value is 19N, compared with the little 1N of head tension, the elongation of steel wire is about 2.5%, and home roll head wiring groove bottom land is identical to the distance of the axis of sheave main body with afterbody wiring groove bottom land to the axis of sheave main body, therefore the loss of tension of afterbody can be larger, causes steel wire string pendulum momentum large, impact the thickness parameter of silicon chip.
Utility model content:
The purpose of this utility model is that providing a kind of adopts the design, effectively reduces the situation that sheave afterbody silicon chip total thickness variations is large, ensure that the thickness cutting overall silicon chip is evenly distributed, thus improve the quality of silicon chip.
The utility model is implemented by following technical scheme: a kind of novel sheave for ultra thin silicon wafers cutting, it comprises cylindrical groove wheel body, the side of described sheave main body there is circular wiring groove by head to afterbody is evenly distributed, increases progressively L by head successively to the described circular wiring groove bottom land of afterbody to the axial line distance of sheave main body.
Preferably, the described circular wiring groove bottom land of described sheave body head is 95mm-110mm to axial line distance.
Preferably, described L is 0.1-0.12mm.
Advantage of the present utility model: effectively reduce the situation that sheave afterbody silicon chip total thickness variations is large, ensure that the thickness cutting overall silicon chip is evenly distributed, thus improves the quality of silicon chip.
Accompanying drawing illustrates:
Fig. 1 is structural representation of the present utility model.
Sheave main body 1, circular wiring groove 2.
Detailed description of the invention:
Below in conjunction with accompanying drawing, the utility model is described:
Embodiment 1: a kind of novel sheave for ultra thin silicon wafers cutting, it comprises cylindrical groove wheel body 1, the side of sheave main body 1 has circular wiring groove 2 by head to afterbody is evenly distributed, and circular wiring groove 2 bottom land of sheave main body 1 head is 95mm to the axial line distance A of sheave main body 1; Successively increasing progressively L to circular wiring groove 2 bottom land of afterbody to the axial line distance of sheave main body 1 by head is 0.11mm.
Embodiment 2: a kind of novel sheave for ultra thin silicon wafers cutting, it comprises cylindrical groove wheel body 1, the side of sheave main body 1 has circular wiring groove 2 by head to afterbody is evenly distributed, and circular wiring groove 2 bottom land of sheave main body 1 head is 110mm to the axial line distance A of sheave main body 1; Successively increasing progressively L to circular wiring groove 2 bottom land of afterbody to the axial line distance of sheave main body 1 by head is 0.1mm.
Embodiment 3: a kind of novel sheave for ultra thin silicon wafers cutting, it comprises cylindrical groove wheel body 1, the side of sheave main body 1 has circular wiring groove 2 by head to afterbody is evenly distributed, and circular wiring groove 2 bottom land of sheave main body 1 head is 102mm to the axial line distance A of sheave main body 1; Successively increasing progressively L to circular wiring groove 2 bottom land of afterbody to the axial line distance of sheave main body 1 by head is 0.12mm.
Claims (3)
1. the novel sheave for ultra thin silicon wafers cutting, it comprises cylindrical groove wheel body, the side of described sheave main body there is circular wiring groove by head to afterbody is evenly distributed, it is characterized in that, increase progressively L by head successively to the described circular wiring groove bottom land of afterbody to the axial line distance of sheave main body.
2. a kind of novel sheave for ultra thin silicon wafers cutting according to claim 1, it is characterized in that, the described circular wiring groove bottom land of described sheave body head is 95mm-110mm to axial line distance A.
3., according to the arbitrary described a kind of novel sheave for ultra thin silicon wafers cutting of claim 1 or 2, it is characterized in that, described L is 0.1-0.12mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420653613.0U CN204209844U (en) | 2014-10-31 | 2014-10-31 | A kind of novel sheave for ultra thin silicon wafers cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420653613.0U CN204209844U (en) | 2014-10-31 | 2014-10-31 | A kind of novel sheave for ultra thin silicon wafers cutting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204209844U true CN204209844U (en) | 2015-03-18 |
Family
ID=52978549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420653613.0U Expired - Lifetime CN204209844U (en) | 2014-10-31 | 2014-10-31 | A kind of novel sheave for ultra thin silicon wafers cutting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204209844U (en) |
-
2014
- 2014-10-31 CN CN201420653613.0U patent/CN204209844U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210517 Address after: No.32, Kangxiang Road, Tanggu marine science and Technology Park, Binhai New Area, Tianjin 300450 Patentee after: Tianjin Huanzhi New Energy Technology Co.,Ltd. Address before: 010070 18 jinlijie street, Jinqiao Development Area, Hohhot, the Inner Mongolia Autonomous Region Patentee before: INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL Co.,Ltd. |
|
| TR01 | Transfer of patent right |