CN204204377U - Display and electronic equipment display - Google Patents
Display and electronic equipment display Download PDFInfo
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- CN204204377U CN204204377U CN201420653815.5U CN201420653815U CN204204377U CN 204204377 U CN204204377 U CN 204204377U CN 201420653815 U CN201420653815 U CN 201420653815U CN 204204377 U CN204204377 U CN 204204377U
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Abstract
The utility model relates to display and electronic equipment display.Display can have the array of organic light emitting diode display pixel.Each display picture element can have light emitting diode luminous under driving transistors controls.Each display picture element also can have for compensating the control transistor with programming operation.The array of display picture element can have row and column.Line can be used for applying row control signal to the row of display picture element.Alignment (data line) can be used to apply display data and other signals to the row of respective display pixel.Bottom conductive shielding construction can be formed below each driving transistors.Bottom conductive shielding construction can be used for driving transistors to open from any electric field shielding produced from adjacent line and alignment.Bottom conductive shielding construction can be electric floating or be coupled to power circuit.
Description
cross-reference to related applications
This application claims the right of priority of the U.S. Provisional Patent Application 61/929,907 of the U.S. Patent application submission on January 21st, 14/488,725 and 2014 submitted on September 17th, 2014, above-mentioned patented claim is incorporated herein by reference accordingly in full.
Technical field
The utility model relates generally to the electronic equipment with display, more specifically, relates to the display driving circuit for display such as organic light emitting diode display.
Background technology
Electronic equipment generally includes display.Such as, cell phone and portable computer comprise the display for presenting information to user.
Display, such as organic light emitting diode display, have the display pixel array based on light emitting diode.In such display, each display picture element comprises light emitting diode and thin film transistor (TFT), and thin film transistor (TFT) is used for controlling to apply signal to produce light to light emitting diode.
Organic light emitting diode display pixel comprises the driving thin film transistor (TFT) being connected to data line via access thin film transistor (TFT).Access transistor can have gate terminal, and its sweep trace via correspondence receives sweep signal.Can by assert that the view data on data line is loaded in display picture element with conducting access transistor by sweep signal.
In the organic light emitting diode display pixel of routine, sweep trace is comparatively formed close to driving transistors.In specific operational scenario, can sweep trace be biased, thus horizontal component of electric field can be produced between sweep trace and the channel region of driving transistors.The electric field produced by this way may disturb the operation driving thin film transistor (TFT), thus causes undesirable colored artifact.
Therefore, the display that improvement can be provided is wished, the organic light emitting diode display such as improved.
Utility model content
Electronic equipment can comprise the display with display pixel array.Display picture element can be organic light emitting diode display pixel.Each display picture element can have luminous Organic Light Emitting Diode.Driving transistors in each display picture element can apply electric current to the Organic Light Emitting Diode in this display picture element.Driving transistors can be characterized by threshold voltage.
Each display picture element can have control transistor, and this control transistor is used for compensating display picture element for the change in threshold voltage.During compensating operation, reference voltage can be provided to display picture element.Control during transistor is also used in programming operation to loaded and displayed data in display picture element and the firing operation controlling display picture element.
The electrically conductive shield structure be formed at immediately below driving transistors can be provided, to prevent the operation of any horizontal component of electric field interference driving transistors produced because of bias control transistor for each display picture element.Electrically conductive shield structure only can be formed at below driving transistors instead of control below transistor.
Electrically conductive shield structure can be formed by transparent conductive material or opaque conductive material.Electrically conductive shield structure can be that electricity is floating, or can be shorted to public power circuit such as common cathode electrode.Particularly, electrically conductive shield structure can be formed at least one cushion between the transparency carrier that is plugged on driving transistors and is formed with driving transistors above it.Therefore, sometimes the conductive shield formed by this way is called bottom shield
On the one hand, a kind of display is disclosed.This display comprises: substrate; Thin film transistor (TFT), it is formed on described substrate; At least one cushion, it is inserted between described thin film transistor (TFT) and described substrate; And electrically conductive shield structure, it is directly formed in described cushion under described thin film transistor (TFT).
In one embodiment, described electrically conductive shield structure is formed by transparent conductive material.In one embodiment, described electrically conductive shield structure is formed by opaque conductive material.In one embodiment, described electrically conductive shield structure is that electricity is floating.In one embodiment, this display also comprises: power circuit, and wherein said electrically conductive shield structure is shorted to described power circuit.In one embodiment, this display also comprises: cathode electrode, and it is shorted to described electrically conductive shield structure by through hole.In one embodiment, described thin film transistor (TFT) has the grid formed on gate insulator, and wherein said electrically conductive shield structure does not directly contact with described gate insulator.In one embodiment, this display also comprises: other thin film transistor (TFT), and wherein said electrically conductive shield structure to be only formed at below described thin film transistor (TFT) not below described other thin film transistor (TFT).
On the other hand, a kind of electronic equipment display is disclosed.This electronic equipment display comprises: the display picture element being arranged to array, and each display picture element in wherein said array comprises: driving transistors; And conductive shield, it is formed at below described driving transistors.
In one embodiment, each display picture element in described array also comprises the light emitting diode being coupled to described driving transistors.In one embodiment, the described conductive shield in each display picture element in described array is that electricity is floating.In one embodiment, the described conductive shield in each display picture element in described array is shorted to public electrode.In one embodiment, the described conductive shield in each display picture element in the Part I of described array is that electricity is floating, and the described conductive shield in each display picture element in the Part II of described array is shorted to public electrode.
Accompanying drawing explanation
Fig. 1 is the diagram with the illustrative electronic equipment of display according to an embodiment.
Fig. 2 is the diagram such as according to the illustrative display of an embodiment with the organic light emitting diode display of organic light emitting diode display pel array.
Fig. 3 is the diagram that can be used for the illustrative organic light emitting diode display pixel of the type in display according to an embodiment.
Fig. 4 is the cross-sectional side view of conventional organic light emitting diode display dot structure.
Fig. 5 is the cross-sectional side view of the illustrative organic light emitting diode display pixel of the electrically conductive shield structure having driving transistors and formed immediately below driving transistors according to an embodiment.
Fig. 6 is the top view of the multiple display picture elements according to type shown in Fig. 5 with the floating electrically conductive shield structure of electricity of an embodiment.
Fig. 7 is the top view of the multiple display picture elements according to type shown in Fig. 5 with the electrically conductive shield structure of electric short circuit each other of an embodiment.
Fig. 8 shows the diagram that how at least some electrically conductive shield structure in display pixel array can be shorted to common cathode electrode according to an embodiment.
Fig. 9 is the cross-sectional side view of the peripheral part of display pixel array, shows and how can utilize through hole that electrically conductive shield structure is connected to cathode electrode according to an embodiment.
Embodiment
The illustrative electronic equipment of the type that can be equipped with OLED (OLED) display has been shown in Fig. 1.As shown in fig. 1, electronic equipment 10 can have control circuit 16.Control circuit 16 can comprise the Storage and Processing circuit of the operation for support equipment 10.Storage and Processing circuit can comprise memory storage, such as hard disk drive storage devices, nonvolatile memory are (such as, be configured to form the flash memories of solid-state drive or other EPROMs), volatile memory (such as, static state or dynamic RAM), etc.Treatment circuit in control circuit 16 can be used for the operation of opertaing device 10.Treatment circuit can based on one or more microprocessor, microcontroller, digital signal processor, baseband processor, Power Management Unit, audio coding decoding chip, special IC, programmable integrated circuit etc.
Input-output circuit in equipment 10, such as IO unit 12, can be used for allowing data to be supplied to equipment 10 and to allow data from device 10 to be supplied to external unit.IO unit 12 can comprise button, operating rod, some striking wheel, roller, Trackpad, keypad, keyboard, microphone, loudspeaker, audio-frequency generator, Vib., video camera, sensor, light emitting diode and other positioning indicator, FPDP etc.User is by the operation that provides order to carry out opertaing device 10 via IO unit 12 and the output resource of IO unit 12 can be used to export from equipment 10 receiving status information and other.
IO unit 12 can comprise one or more display, such as display 14.Display 14 can be touch-screen display, and it comprises touch sensor and touches input for gathering from user, or display 14 can be insensitive to touch.Touch sensor for display 14 can be arranged based on the array of capacitive touch sensor electrode, acoustic touch sensor construction, resistive touch parts, the touch sensor arrangement based on power, the touch sensor based on light or other suitable touch sensors.
Control circuit 16 operating software on device 10 can be used, such as operating system code and application program.During the operation of equipment 10, the software run on control circuit 16 display 14 in IO unit can show image.
Fig. 2 shows display 14, and it comprises the structure be formed on one or more layer such as substrate 24.The layer of such as substrate 24 can be formed by the planar rectangular layer of the material of such as flat glass layer.The array that display 14 can have display picture element 22 shows image for for user.The array of display picture element 22 can be formed by the row and column of the display picture element structure on substrate 24.These structures can comprise thin film transistor (TFT), such as polycrystalline SiTFT, oxide semiconductor film transistor etc.The row and column (such as, ten or more, 100 or more or 1,000 or more) of any right quantity can be had in the array of display picture element 22.
Can utilize solder or electroconductive binder that display driving circuit such as display-driver Ics 15 is coupled to the metal trace on conductive path such as substrate 24.Display-driver Ics 15 (being sometimes referred to as timing controller chip) can comprise the telecommunication circuit for being communicated with system, control circuit 16 by path 25.Path 25 can be formed by the trace on flexible print circuit or other cables.Control circuit can be arranged in the main logic board of electronic equipment, and electronic equipment comprises such as cell phone, computing machine, TV, Set Top Box, media player, portable electric appts or using other electronic equipments of display 14.During operation, control circuit can provide the information of the image that will show on display 14 for display-driver Ics 15.In order to show image on display picture element 22, display-driver Ics 15 can to display driving circuit, such as row driver circuits 18 and column driver circuit 20, provides clock signal and other control signals.Row driver circuits 18 and/or column driver circuit 20 can be formed by one or more integrated circuit and/or one or more thin-film transistor circuit.
Row driver circuits 18 can be positioned at the left and right edges of display 14, only at the single edge of display 14, or the other places in display 14.During operation, row driver circuits 18 can provide row control signal on horizontal line 28 (being sometimes referred to as line or " scanning " line).Sometimes row driver circuits can be called scan line driver circuit.
Can use column driver circuit 20 on the perpendicular line 26 of multiple correspondence, provide data-signal D from display-driver Ics 15.Column driver circuit 20 can be called data line driver circuit or source driver circuit sometimes.Perpendicular line 26 is sometimes referred to as data line.During compensating operation, column driver circuit 20 can use perpendicular line 26 to provide reference voltage.During programming operation, utilize circuit 26 to loaded and displayed data in display picture element 22.
Each data line 26 is all associated with the display picture element 22 of respective column.Many groups horizontal signal lines 28 is by display 14 horizontal-extending.Often organize horizontal signal lines 28 to be all associated with the display picture element 22 of corresponding line.The number of the horizontal signal lines often in row is determined by the transistor size in the display picture element 22 independently controlled by horizontal signal lines.The display picture element of different configuration can be operated by the sweep trace of varying number.
Row driver circuits 18 can assert control signal, the sweep signal on the line 28 in such as display 14.Such as, drive circuit 18 can from display-driver Ics 15 receive clock signal and other control signals, and sweep signal every row display picture element 22 can be assert in response to received signal in and transmitting.Can the row of processing display pixel 22 successively, (such as) starts from the top of display pixel array for the process of every frame image data, and ends at the bottom of array.When assert the sweep trace in row, the control signal being supplied to column driver circuit 20 by circuit 16 and data-signal indicating circuit 20 are to the data-signal D demultiplexing associated and be driven on data line 26, thus the display data appeared on data line D will be utilized to programme to the display picture element in row.Then display picture element can show the display data of loading.
In organic light emitting diode display, each display picture element comprises corresponding Organic Light Emitting Diode.The schematic diagram of illustrative organic light emitting diode display pixel 22 has been shown in Fig. 3.As shown in Figure 3, display picture element 22 can comprise the light emitting diode 30 being coupled to driving transistors TD.Can by positive voltage V
dDELbe supplied to positive power terminal 34, and can by earthing power supply voltage V
sSELbe supplied to ground power terminals 36.The state control flow check of driving transistors TD, through the magnitude of current of diode 30, therefore controls the amount of the utilizing emitted light 40 from display picture element 22.
Display picture element 22 can have holding capacitor Cst1 and Cst2 and one or more transistor being used as switch, such as transistor SW1, SW2 and SW3.Line 28 is utilized to provide signal EM and sweep signal SCAN1 and SCAN2 to a line display picture element 22.Data D is provided to a row display picture element 22 via data line 26.
Signal EM is for controlling the operation of ballistic transistor SW3.Transistor SW1 is used for the voltage applying data line 26 to the node A of the grid being connected to driving transistors TD.Transistor SW2 is used for applying direct current (DC) bias voltage Vini to carry out circuit initializes to Node B during compensating operation.
During compensating operation, for the change between pixel, such as transistor threshold voltage change, compensates display picture element 22.Compensation cycle comprises initial phase and threshold voltage generation phase.After the compensation (that is, after the compensating operation completing compensation cycle), in display picture element, load data.Data load process is sometimes referred to as data programing, during it betides programming cycle.In color monitor, programming can relate to data demultiplexing and the data loading demultiplexing in red, green and blue pixel.
After compensation and programming (namely after compensation and programming cycle expire), the display picture element of this row can be used luminous.The display picture element luminous time cycle (time namely during light emitting diode 30 luminescence 40) is just being used to be sometimes referred to as the transmitting cycle.
During initial phase, circuit 18 assert SCAN1 and SCAN2 (that is, getting the high level of SCAN1 and SCAN2).This is by turn-on transistor SW1 and SW2, makes to apply reference voltage signal Vref and initialization voltage signal Vini respectively to node A and B.During the threshold voltage generation phase of compensation cycle, assert signal EM actuating switch SW3, electric current is flowed through capacitor charging that driving transistors TD thinks Node B place.Along with the voltage at Node B place raises, will be reduced by the electric current of driving transistors TD, because the grid-source voltage Vgs of driving transistors TD is by the threshold voltage vt close to driving transistors TD.Therefore the voltage at Node B place will reach Vref-Vt.
After the compensation (that is, after initialization and threshold voltage generate), program data in the display picture element through compensating.During programming, end ballistic transistor SW3 by deassert signal EM, and utilize data line 26 to apply the data voltage D expected to node A.The voltage at node A place is display data voltage Vdata after programming.Because with coupling Node A, so the voltage at Node B place can raise.Specifically, the voltage getting Node B place is Vref-Vt+ (Vdata-Vref) * K, and wherein K equals Cst1/ (Cst1+Cst2+Coled), and wherein Coled is the electric capacity be associated with diode 30.
After completing compensation and programming operation, the display picture element through over-compensation and programming is placed in emission mode (that is, starting to launch the cycle) by the display driving circuit of display 14.During launching, assert signal EM, with turn-on transistor SW3 for each display picture element through compensating and programme.The voltage at Node B place reaches Voled, the voltage be namely associated with diode 30.The voltage at node A place reaches Vdata+Voled-(Vref-Vt)-(Vdata-Vref) * K.Vgs-Vt value for driving transistors equals the difference between voltage at node A Va and Node B place voltage Vb.The value of Va-Vb is (Vdata-Vref) * (1-K), and itself and Vt have nothing to do.Therefore, each display picture element 22 that is changed to for threshold voltage compensates, and makes the amount of the light 40 launched by display picture element 22 each in this row only proportional with the value of each data-signal D for those display picture elements.
Fig. 4 is the cross-sectional side view of conventional OLED display dot structure.As shown in Figure 4, dot structure is formed on polyimide (PI) substrate 100 of printing opacity.Multiple cushion 102 is formed on PI substrate 100.Cushion 102 make polysilicon 108 patterning to form the active area for driving transistors 106.Cushion 102 above polysilicon 108 forms gate insulator 104.Metal gate conductor 110 to be formed on gate insulator 104 and to serve as the gate terminal of driving transistors 106.The metal pathway 130 of formation adjacent with transistor 106 can serve as one of the sweep trace for display picture element.Silicon nitride passivation (not shown in Fig. 4) can be formed on the gate insulator 104 above metal construction 110 and 130.
The thin film drive transistor 106 formed in this way is delivered current between the negative electrode 58 (i.e. indium-tin oxide electrode) and anode 116 (i.e. metal level) of light emitting diode 119.Because this electric current launches electroluminescence layer (emission layer) 118 by Organic Light Emitting Diode, so produce light 122.The display picture element producing light 122 is by this way commonly referred to top-emitting display pixel.
During normal display operation, sometimes sweep trace 130 is biased to negative voltage (that is, sweep trace 130 can be biased to-5V).Suppose that cushion 102 comprises two cushions, can negative charge be caused at the top of PI substrate 100.The negative charge caused by this way may adversely reduce flow through driving transistors 106 the magnitude of current (namely, as shown in line 132, the electric field produced between sweep trace 130 and the raceway groove of transistor 106 can have a negative impact to the performance of transistor 106).Therefore, may wish to be formed not by the display picture element of this level field effects.
According to an embodiment, provide a kind of display picture element 22 (such as, see Fig. 5) with bottom conductive shielding.As shown in Figure 5, thin-film transistor structure such as thin film drive transistor TD can be formed on the transparency carrier 200 be made up of glass, polyimide or other transparent dielectric materials.Thin film transistor (TFT) TD can serve as the display picture element driving transistors TD that composition graphs 3 describes.
One or more cushions of such as cushion 306 can be formed on substrate 200.Other layers that cushion 306 can comprise the layer being sometimes referred to as many buffering (MB) layers, active oxide skin(coating) and be formed by any suitable transparent dielectric material.
The active material 208 being used for transistor TD can be formed on cushion 202.Active material 208 can be the layer of polysilicon, indium oxide gallium zinc, amorphous silicon or other semiconductor materials.Gate insulator such as gate insulator 204 can be formed on cushion 202 and above active material.Gate insulator 204 can be formed by dielectric such as monox.Conductive gate structure such as grid conductor 210 can be arranged at above gate insulator 204.Grid conductor 210 can serve as the gate terminal for thin film transistor (TFT) TD.Active material 208 part immediately below grid 210 can serve as the channel region of transistor TD.
Conductive path such as path 230 can be formed as closely close to transistor TD.Such as path 230 can be a part for the control line for transmitting one of control/data-signal to display picture element 22.In one arrangement, path 230 can be the part for carrying the sweep trace of signal SCAN1 to the corresponding interrupteur SW 1 in pixel 22 (Fig. 3).In another kind is arranged, path 230 can be the part for carrying the sweep trace of signal SCAN2 to the corresponding interrupteur SW 2 in pixel 22.In another kind is arranged, path 230 can be the part for carrying the control line of signal EM to the corresponding interrupteur SW 3 in pixel 22.
Optionally can form passivation layer on gate insulator 204 He above grid 210, such as silicon nitride layer (not shown in Fig. 5).After deposition of the passivation layers, hydrogenation annealing process can be applied with passivation film transistor arrangement.
One or more dielectric layer 212 (being sometimes referred to as interlayer dielectric or " ILD " layer) can be formed above thin-film transistor structure.The material forming grid 210 and path 230 is sometimes referred to as " M1 " metal.Therefore, the dielectric layer wherein forming M1 metal can be called M1 metal routing layer.
The thin-film transistor structure of such as thin film transistor (TFT) TD can between the negative electrode 220 (such as, transparency conducting layer such as tin indium oxide or indium zinc oxide) of light emitting diode 219 and anode 216 (such as, light reflective metal layer) delivered current.Because this electric current launches electroluminescence layer (emission layer) 218 through Organic Light Emitting Diode, therefore light can be produced.The light produced by this way can through corresponding color-filter element (not shown), and it is that the light launched gives the color expected.Usually, top-emission or bottom emission display pixel arrangement can be implemented for display 14.
As mentioned above, sometimes such as electric field may be produced between path 230, as shown in dotted line field line 232 at transistor TD and adjacent control channels.According to an embodiment of the present utility model, electrically conductive shield structure can be formed immediately below the driving transistors TD within cushion 202 and such as shield 250.Shielding 250 directly should not contact with gate insulator 204 with active material 208.Shielding construction 250 can be formed by transparent conductive material such as tin indium oxide, molybdenum and molybdenum tungsten or opaque conductive material such as titanium, copper, aluminium or other metals.After being formed by this way, conductive bottom shielding 250 can be used for blocking from metal pathway 230 or any level field (such as, shielding 250 can prevent any undesirable horizontal component of electric field from adversely affecting the operation of transistor TD) of producing for any other adjacent control wires of transistor TD.Therefore, sometimes the shielding 250 be formed at by this way below transistor TD is called " bottom " shielding or electric field shielding.
Usually, may only wish immediately below driving transistors in each pixel, to form bottom conductive shielding.In other words, bottom conductive shielding need not be formed for peripheral switch transistor SW1, SW2 and SW3 (Fig. 3).Only below driving thin film transistor (TFT) TD, form shielding 250 can help to reduce any undesirable stray capacitance within pixel 22, thus dynamic power consumption is minimized.
The structure of Fig. 5 forms the single sub-pixel of particular color.In display 14, each display picture element 22 can have three or four sub-pixels or each display picture element 22 can have the sub-pixel of other right quantities.Fig. 6 is the diagram of the exemplary display pixel 22 with three sub-pixels 22-R, 22-G and 22-B.Sub-pixel 22-R can comprise the circuit (such as, sub-pixel 22-R can comprise the light emitting diode by the luminescence of red color filter element) for showing ruddiness.Sub-pixel 22-G can comprise the circuit (such as, sub-pixel 22-G can comprise the light emitting diode by the luminescence of green color element) for showing green glow.Sub-pixel 22-B can comprise the circuit (such as, sub-pixel 22-B can comprise the light emitting diode by the luminescence of blue color element) for showing blue light.This is only illustrative.Usually, display picture element 22 can comprise the sub-pixel being configured to transmit other types light in ruddiness, green glow, blue light, green light, magenta light, gold-tinted, white light and/or visible spectrum of any amount.
As shown in Figure 6, each sub-pixel comprises driving transistors TD and corresponding conductive light shielding 250, and this light shield is directly overlapping with the areal coverage of driving transistors TD.By this way after configuration, the operation of any electric jamming driving transistors that light shield structure 250 produces for preventing the bias voltage because putting on control path 230.The example of Fig. 6 is only illustrative, and wherein bottom shield 250 is electricity floating (that is, shielding 250 actively do not driven by any pullup or pulldown circuit and be not connected to each other).In the layout that other are suitable, conduction short circuit path 252 (such as, see Fig. 7) short circuit bottom shield 250 can be utilized.
As shown in Figure 7, can be formed in the layer identical with conductive shield 250 and conduct electricity short circuit path 252 (such as, can be formed in the cushion 202 of Fig. 5 conduct electricity short circuit path 252).Conduction short circuit path 252 also can be formed by the material identical with shielding 250 (such as, short circuit path 252 can be formed by transparent conductive material such as tin indium oxide, molybdenum and molybdenum tungsten or opaque conductive material such as titanium, copper, aluminium or other metals).Via conductive path 252, bottom shield is shorted together the screening ability that improvement can be provided, especially when path 252 is shorted to some power circuits.
Fig. 8 shows the diagram of the array of the pixel 22 in display 14.As shown in Figure 8, via path 252, (such as, conductive shield 250-R, 250-G and the 250-B) at least partially of bottom shield 250 can be shorted to power circuit 254 and (such as, provide earthing power supply voltage V
sSELpower circuit).Only at the periphery of display 14, bottom shield short circuit path 252 can be coupled to ground wire 254.By connecting by this way, the bottom shield in each display sub-pixel is driven into constant voltage V
sSEL, this makes driving transistors can operate in a more consistent way in whole display pixel array.
Still with reference to figure 8, the bottom shield at least some display picture element 22 is floating, is not connected to power circuit 254.This is only illustrative.And for example, the conductive shield 250 of each sub-pixel in whole pel array can be that electricity is floating.And for example, the conductive shield 250 of each sub-pixel in whole pel array all can be shorted to earthing power supply circuit, positive supply circuit or other power circuits.
As above as described in composition graphs 5, bottom shield structure 250 can be formed in cushion 202.In layout bottom shield structure 250 being shorted to ground wire (such as, common cathode electrode), by the conductive through hole that formed through tft layer or " through hole " structure by bottom shield structure Coupling to negative electrode.
The cross-sectional side view of the peripheral part 260 of display 14 is shown in Fig. 9, has shown and how bottom shield structure can be shorted to cathode electrode.As shown in Figure 9, the short circuit path 252 that conducts electricity to be formed in cushion 202 and to may extend in the periphery of display 14.One or more M1 metal route path can be formed, such as metal construction 231 on gate insulator 204.The first through-hole structures 290 are formed to be formed and the contacting of bottom conductive path 252 by layer 212 and 204.Specifically, through hole 290 can set up the electrical connection between path 252 and anode 216.The second through-hole structure 292 is formed to form the contact with anode 216 by layer 218.Specifically, through hole 282 can be used for setting up the electrical connection between anode 216 and negative electrode 220.By configuring by this way, by conductive path 252 and through hole 290 and 292, the bottom shield structure 250 of type shown in Fig. 5, Fig. 7 and Fig. 8 is shorted to grounded cathode electrode.
According to an embodiment, provide a kind of display, this display comprises substrate, is formed at the thin film transistor (TFT) of surface, inserts at least one cushion between thin film transistor (TFT) and substrate and is formed at the electrically conductive shield structure in the cushion immediately below thin film transistor (TFT).
According to another embodiment, electrically conductive shield structure is formed by transparent conductive material.
According to another embodiment, electrically conductive shield structure is formed by opaque conductive material.
According to another embodiment, electrically conductive shield structure is that electricity is floating.
According to another embodiment, display comprises power circuit, and electrically conductive shield structure is shorted to power circuit.
According to another embodiment, display comprises the cathode electrode being shorted to electrically conductive shield structure by through hole.
According to another embodiment, thin film transistor (TFT) has the grid formed on gate insulator, and electrically conductive shield structure does not directly contact with gate insulator.
According to another embodiment, display comprises other thin film transistor (TFT), and electrically conductive shield structure to be only formed at below thin film transistor (TFT) not below other thin film transistor (TFT).
According to an embodiment, provide a kind of method manufacturing display picture element, be included in surface and form thin film transistor (TFT), form the cushion be inserted between thin film transistor (TFT) and substrate, and in cushion, form the electric field shielding being used for thin film transistor (TFT).
According to another embodiment, formation electric field shielding is included in immediately below thin film transistor (TFT) and forms electrically conductive shield structure.
According to another embodiment, the method comprises the light emitting diode being formed and be coupled to thin film transistor (TFT).
According to another embodiment, light emitting diode has cathode electrode, and the method comprises, by conductivity through-hole structure, electric field shielding is shorted to cathode electrode.
According to another embodiment, electric field shielding is not active matrix driving.
According to another embodiment, the method is included in surface and forms other thin film transistor (TFT), and forms other electric field shielding for other thin film transistor (TFT) in cushion.
According to another embodiment, the method is included in cushion the conductive path forming short circuit electric field shielding and other electric field shielding.
According to an embodiment, provide a kind of electronic equipment display, comprise the display picture element being arranged to array, the conductive shield that each display picture element in array comprises driving transistors and formed below driving transistors.
According to another embodiment, each display picture element in array also comprises the light emitting diode being coupled to driving transistors.
According to another embodiment, the conductive shield in each display picture element in array is that electricity is floating.
According to another embodiment, the conductive shield in each display picture element in array is shorted to public electrode.
According to another embodiment, the conductive shield in each display picture element in the Part I of array is that electricity is floating, and the conductive shield in each display picture element in the Part II of array is shorted to public electrode.
Above content is only illustrative, and those skilled in the art can make various amendment when not departing from scope and the essence of described embodiment.Above-described embodiment can be implemented separately, also can combination in any implement.
Claims (13)
1. a display, is characterized in that, described display comprises:
Substrate;
Thin film transistor (TFT), it is formed on described substrate;
At least one cushion, it is inserted between described thin film transistor (TFT) and described substrate; And
Electrically conductive shield structure, it is directly formed in described cushion under described thin film transistor (TFT).
2. display according to claim 1, is characterized in that, described electrically conductive shield structure is formed by transparent conductive material.
3. display according to claim 1, is characterized in that, described electrically conductive shield structure is formed by opaque conductive material.
4. display according to claim 1, is characterized in that, described electrically conductive shield structure is that electricity is floating.
5. display according to claim 1, is characterized in that, described display also comprises:
Power circuit, wherein said electrically conductive shield structure is shorted to described power circuit.
6. display according to claim 1, is characterized in that, described display also comprises:
Cathode electrode, it is shorted to described electrically conductive shield structure by through hole.
7. display according to claim 1, is characterized in that, described thin film transistor (TFT) has the grid formed on gate insulator, and described electrically conductive shield structure does not directly contact with described gate insulator.
8. display according to claim 1, is characterized in that, described display also comprises:
Other thin film transistor (TFT), wherein said electrically conductive shield structure to be only formed at below described thin film transistor (TFT) not below described other thin film transistor (TFT).
9. an electronic equipment display, is characterized in that, described electronic equipment display comprises:
Be arranged to the display picture element of array, each display picture element in wherein said array comprises:
Driving transistors; And
Conductive shield, it is formed at below described driving transistors.
10. electronic equipment display according to claim 9, is characterized in that, each display picture element in described array also comprises the light emitting diode being coupled to described driving transistors.
11. electronic equipment display according to claim 10, is characterized in that, the described conductive shield in each display picture element in described array is that electricity is floating.
12. electronic equipment display according to claim 10, is characterized in that, the described conductive shield in each display picture element in described array is shorted to public electrode.
13. electronic equipment display according to claim 10, it is characterized in that, described conductive shield in each display picture element in the Part I of described array is that electricity is floating, and the described conductive shield in each display picture element in the Part II of described array is shorted to public electrode.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461929907P | 2014-01-21 | 2014-01-21 | |
| US61/929,907 | 2014-01-21 | ||
| US14/488,725 | 2014-09-17 | ||
| US14/488,725 US9337247B2 (en) | 2014-01-21 | 2014-09-17 | Organic light-emitting diode display with bottom shields |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204204377U true CN204204377U (en) | 2015-03-11 |
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ID=52610891
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420653815.5U Withdrawn - After Issue CN204204377U (en) | 2014-01-21 | 2014-11-04 | Display and electronic equipment display |
| CN201410611792.6A Active CN104393018B (en) | 2014-01-21 | 2014-11-04 | Organic light emitting diode display with bottom shield |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410611792.6A Active CN104393018B (en) | 2014-01-21 | 2014-11-04 | Organic light emitting diode display with bottom shield |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393018A (en) * | 2014-01-21 | 2015-03-04 | 苹果公司 | Organic light emitting diode display with bottom shield |
| CN110366779A (en) * | 2017-03-24 | 2019-10-22 | 苹果公司 | Display with silicon top-gate thin-film transistors and conductor oxidate top-gate thin-film transistors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102628884B1 (en) * | 2015-11-27 | 2024-01-26 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| KR20180050478A (en) * | 2016-11-04 | 2018-05-15 | 삼성디스플레이 주식회사 | Thin film transistor, manufacturing method of the same, and display device having the same |
| KR102613853B1 (en) * | 2016-12-19 | 2023-12-18 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| KR102508157B1 (en) * | 2017-12-27 | 2023-03-08 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN113383424A (en) * | 2019-07-19 | 2021-09-10 | 深圳市柔宇科技股份有限公司 | Display panel and electronic device |
| WO2021226864A1 (en) * | 2020-05-13 | 2021-11-18 | 京东方科技集团股份有限公司 | Pixel drive method, display drive method, and display substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001148480A (en) * | 1999-11-18 | 2001-05-29 | Nec Corp | Thin film transistor and device and method for manufacturing the same |
| TWI301915B (en) * | 2000-03-17 | 2008-10-11 | Seiko Epson Corp | |
| JP4088190B2 (en) * | 2002-05-21 | 2008-05-21 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| KR100793357B1 (en) * | 2005-03-18 | 2008-01-11 | 삼성에스디아이 주식회사 | Thin Film Transitor and Flat Panel Display Device, and Method of fabricating thereof |
| TWI303888B (en) * | 2006-07-21 | 2008-12-01 | Au Optronics Corp | Ltps-lcd structure and method for manufacturing the same |
| CN100526962C (en) * | 2006-09-14 | 2009-08-12 | 爱普生映像元器件有限公司 | Display device and method of manufacturing the same |
| JP2008203761A (en) * | 2007-02-22 | 2008-09-04 | Hitachi Displays Ltd | Display device |
| US20100245370A1 (en) * | 2009-03-25 | 2010-09-30 | Qualcomm Mems Technologies, Inc. | Em shielding for display devices |
| JP2011009704A (en) * | 2009-05-26 | 2011-01-13 | Seiko Epson Corp | Thin film device, flexible circuit board including thin film device, and method for manufacturing thin film device |
| WO2011083598A1 (en) * | 2010-01-07 | 2011-07-14 | シャープ株式会社 | Semiconductor device, active matrix substrate, and display device |
| JP2012064604A (en) * | 2010-09-14 | 2012-03-29 | Casio Comput Co Ltd | Transistor structure, method of manufacturing transistor structure, and light-emitting device |
| CN204204377U (en) * | 2014-01-21 | 2015-03-11 | 苹果公司 | Display and electronic equipment display |
-
2014
- 2014-11-04 CN CN201420653815.5U patent/CN204204377U/en not_active Withdrawn - After Issue
- 2014-11-04 CN CN201410611792.6A patent/CN104393018B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393018A (en) * | 2014-01-21 | 2015-03-04 | 苹果公司 | Organic light emitting diode display with bottom shield |
| CN104393018B (en) * | 2014-01-21 | 2019-03-22 | 苹果公司 | Organic light emitting diode display with bottom shield |
| CN110366779A (en) * | 2017-03-24 | 2019-10-22 | 苹果公司 | Display with silicon top-gate thin-film transistors and conductor oxidate top-gate thin-film transistors |
| CN110366779B (en) * | 2017-03-24 | 2023-10-31 | 苹果公司 | Display with silicon top gate thin film transistor and semiconductor oxide top gate thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104393018A (en) | 2015-03-04 |
| CN104393018B (en) | 2019-03-22 |
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Granted publication date: 20150311 Effective date of abandoning: 20190322 |