CN204203262U - A kind of passive acceleration sensing chip - Google Patents
A kind of passive acceleration sensing chip Download PDFInfo
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- CN204203262U CN204203262U CN201420573499.0U CN201420573499U CN204203262U CN 204203262 U CN204203262 U CN 204203262U CN 201420573499 U CN201420573499 U CN 201420573499U CN 204203262 U CN204203262 U CN 204203262U
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- mems
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- sensing chip
- acceleration sensing
- acceleration
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Abstract
The utility model discloses a kind of passive acceleration sensing chip, its chips comprises superstructure and understructure; Described understructure comprises underlying substrate sheet, and this underlying substrate sheet is provided with MEMS electric capacity and the MEMS inductance of series connection; Superstructure comprises upper strata substrate slice, MEMS acceleration induction can moving-conductor mass and brace summer, brace summer is connected with upper strata substrate slice, is fixed on above understructure, can be suspended in above MEMS inductance by brace summer by moving-conductor mass, metal level can be deposited with bottom moving-conductor mass; When acceleration sensing chip have perpendicular to this can the acceleration of moving-conductor mass time, this can move up and down by moving-conductor mass thereupon.
Description
Technical field
The present invention relates to acceleration sensing chip, particularly relate to a kind of Internet of Things passive and wireless acceleration sensing chip.
Background technology
Internet of Things is called as the third wave of information industry after computing machine, internet, for 21st century global industry, urbanization process provides revolutionary infotech and intellectual technology.As subfoundation device and the internet-of-things terminal node-sensor of Internet of Things, to be the maximum and most basic link of total demand in whole Internet of Things industrial chain, the speed of development that direct ectocrine is networked by the technical merit of internet-of-things terminal node and related industry thereof and speed of development.
Accelerometer is used to the instrument of acceleration measurement, has important using value at space flight, navigation, automobile.Along with micro electronmechanical MEMS(Micro-Electro-Mechanical Systems, MEMS (micro electro mechanical system)) rise of industry, accelerometer is gradually to microminiaturized, integrated direction development.The advantages such as mems accelerometer has that volume is little, quality is light, cost is low, low in energy consumption, easy batch production, have been widely used in the fields such as vehicle, test, Aero-Space, daily exercise monitoring, game and some consumer electronics products at present.
Acceleration sensor device for Internet of Things requires that it has the specific of low-power consumption and low cost.And the present acceleration transducer for Internet of Things is all active mode, when some mounting condition inconvenience, as underground structure, the places such as high-altitude building structure, the battery changing internet of things sensors node device has just become very large problem, thus greatly have impact on the widespread use of this sensor.The passive and wireless acceleration sensing chip that the present invention proposes, the work of its chip is without the need to power supply, and acceleration signal spreads out of with inductive coupling wireless mode, therefore can solve the problem of this respect that existing acceleration sensing chip runs in Internet of Things application.On the other hand, the present invention proposes to utilize acceleration to change MEMS inductance, and then change the new method of passive resonant circuit resonance frequency, in design, the change of acceleration can cause the inductance value consecutive variations of micro-inductance, and variation range is large.And inductance component size is little, processing technology is simple, is easy to encapsulation, is applicable to large-scale production.Change the method for electric capacity than tradition, be convenient to eliminate effect of parasitic capacitance and improve system q, greatly promote serviceability and the reliability of sensor chip.
Summary of the invention
The technical problem to be solved in the present invention is it is all the defect of active mode for the acceleration transducer in Internet of Things in prior art, a kind of brand-new MEMS structure and method for transmitting signals are provided, realize a kind of passive and wireless MEMS acceleration sensing chip, this chip without the need to power supply just can wirelessly degree of will speed up signal transmission to receiving end.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of acceleration sensing chip of Internet of Things passive and wireless is provided, comprises superstructure and understructure;
Described understructure comprises underlying substrate sheet, and this underlying substrate sheet is provided with MEMS electric capacity and the MEMS inductance of series connection;
Superstructure comprises upper strata substrate slice, MEMS acceleration induction can moving-conductor mass and brace summer, brace summer is connected with upper strata substrate slice, is fixed on above understructure, can be suspended in above MEMS inductance by brace summer by moving-conductor mass, metal level can be deposited with bottom moving-conductor mass; When acceleration sensing chip have perpendicular to this can the acceleration of moving-conductor mass time, this can move up and down by moving-conductor mass thereupon.
In acceleration sensing chip of the present invention, upper strata substrate slice and underlying substrate sheet connect into an entirety by bonding technology.
In acceleration sensing chip of the present invention, this brace summer is cruciform brace summer.
In acceleration sensing chip of the present invention, can moving-conductor mass, brace summer and upper strata substrate slice be structure as a whole.
In acceleration sensing chip of the present invention, the coil of MEMS inductance is the snail on underlying substrate sheet.
In acceleration sensing chip of the present invention, can the metal level of deposit be noncrystal magnetically soft alloy layer bottom moving-conductor mass.
The present invention also provides a kind of job operation of acceleration sensing chip of Internet of Things passive and wireless, comprises the following steps:
Deposit one layer insulating on underlying substrate sheet, and utilize the photoetching of standard and dry corrosion process to be removed by the insulation course of the periphery bond area of underlying substrate sheet;
Sputter layer of metal layer on the insulating layer;
The bottom electrode of MEMS electric capacity is obtained on the metal layer by photoetching and metal erosion technique, and the planar spiral structures of MEMS inductance terminals, these terminals are connected with the bottom electrode of MEMS electric capacity;
Deposit one layer insulating on the metal layer, and remove redundance with the photoetching of standard and etching process, and the described terminals of the planar spiral structures of described MEMS inductance are formed a perforate, the metal level below perforate is exposed;
The other layer of metal layer of deposit on the insulating layer, the described terminals of this metal level and described tapping form electrical connection, the planar spiral structures of required MEMS inductance is obtained again by photoetching and metal erosion technique, and the another one terminals of this planar spiral structures;
The bottom electrode metal level of MEMS electric capacity deposits one deck middle dielectric layer, as the insulating dielectric layer of electric capacity;
At MEMS induction areas spin coating thick layer glue, and make the figure of the planar spiral structures of MEMS inductance by lithography, recycling metal electroplating process, plating has certain thickness planar spiral inductor structure;
Finally sputter another layer of metal level, obtained the top electrode of MEMS electric capacity by photoetching and etching process, and the connecting line of the another one terminals of this top electrode and MEMS inductance planar spiral structures;
What utilize the photoetching of multistep standard and deep reaction ion etch process to make MEMS acceleration induction on brace summer and brace summer on the top of upper strata substrate slice can moving-conductor mass;
Utilize in the bottom of upper strata substrate slice standard photoetching and deep reaction ion etch process to realize bowl configurations, and obtain the bond area of upper strata substrate slice and underlying substrate sheet;
At the bottom deposit layer of metal layer of upper strata substrate slice, and by the photoetching of standard and metal erosion technique, or stripping technology, remove remainder, only retaining can the metal layer part of moving-conductor mass bottom;
By upper strata substrate slice and underlying substrate sheet bonding.
In method of the present invention, described middle dielectric layer is silicon dioxide.
In method of the present invention, described insulation course is silicon nitride.
In method of the present invention, correspondence can the region deposit layer of metal layer of moving-conductor mass be noncrystal magnetically soft alloy layer.
In method of the present invention, upper strata substrate slice and underlying substrate sheet are silicon chip.
The beneficial effect that the present invention produces is: it is simple that the present invention proposes a kind of structure, the Internet of Things passive and wireless acceleration sensing chip of idle, and technique is simple, is easy to realize large-scale production, meets the low cost of Internet of things node device and the demand of low-power consumption.Sensing principle is for when acceleration changes, and movable conductor block is moved, and the spacing of conductor layer and coil layer is changed, thus causes the inductance value of MEMS to change, and finally causes the frequency of LC resonant tank to change.This Structure and energy design ensure that high sensitivity and the high reliability of sensor.Wherein MEMS inductance adopts the planar spiral winding of electroplating technology and the noncrystal magnetically soft alloy of high permeability, can greatly improve quality factor q value, promotes serviceability and the reliability of sensor chip.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is passive and wireless acceleration sensing chip concept figure of the present invention;
Fig. 2 is the LC resonant tank of MEMS acceleration sensing chip of the present invention;
Fig. 3 a is the schematic top plan view of the chip understructure of the embodiment of the present invention;
Fig. 3 b is a diagrammatic cross-section of the chip understructure of the embodiment of the present invention;
Fig. 3 c is embodiment of the present invention MEMS electric capacity schematic diagram;
Fig. 4 a is the schematic top plan view of the invention process spr chip superstructure;
Fig. 4 b is a diagrammatic cross-section of the invention process spr chip superstructure;
Fig. 5 is the structural representation that the levels of embodiment of the present invention MEMS acceleration sensing chip is bonded together.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The acceleration sensing chip of Internet of Things passive and wireless of the present invention, sensing chip forms LC resonant tank by MEMS electric capacity as shown in Figure 2 and MEMS inductance, and MEMS inductance is wherein made up of planar spiral winding and the movable conductor block of MEMS acceleration induction.The movable conductor block suspension support of acceleration induction is wherein above planar spiral winding, when there being acceleration change, movable conductor block is moved, the spacing of conductor layer and coil layer is changed, thus cause the inductance value of MEMS to change, finally cause the frequency of LC resonant tank to change.Like this, the change of acceleration just can be characterized by the change of the resonance frequency of LC resonant tank.As shown in Figure 1, when acceleration sensing chip 10 works, can by the resonant frequency signal coupling output of coupling inductance degree of the will speed up sensing chip 10 of outside reading circuit.
The acceleration sensing chip of the Internet of Things passive and wireless of the embodiment of the present invention, as shown in Figure 5, comprises superstructure and understructure.
Described understructure comprises underlying substrate sheet 1, and this underlying substrate sheet 1 has insulation course 4, and this insulation course 4 is provided with MEMS electric capacity 2 and the MEMS inductance 3 of series connection, as shown in Fig. 3 a, Fig. 3 b and Fig. 3 c.
As shown in fig. 4 a, what superstructure comprised MEMS acceleration induction can moving-conductor mass 5-1 and brace summer 6, brace summer 6 is fixed on the frame portion of upper strata substrate slice 7, can be suspended in above MEMS inductance 3 by brace summer 6 by moving-conductor mass 5-1, can deposited metal 5-2 bottom moving-conductor mass 5-1, this metal level 5-2 can be, but not limited to noncrystal magnetically soft alloy layer, and it has high magnetoconductivity, as Rhometal NiFe.
When acceleration sensing chip have perpendicular to this can the acceleration of moving-conductor mass 5-1 time, this can move up and down by moving-conductor mass 5-1 thereupon.
In one embodiment of the present of invention, can moving-conductor mass 5-1, brace summer 6 and upper strata substrate slice 7 are structure as a whole.What make MEMS acceleration induction on brace summer 6 and brace summer as utilized the photoetching of multistep standard and deep reaction ion etch process on the top of upper strata substrate slice can moving-conductor mass 5-1.
As shown in Figure 3 a, the coil of MEMS inductance is the snail on the insulation course 4 of underlying substrate sheet.As shown in Fig. 3 a or Fig. 3 b, the planar spiral winding of MEMS inductance is passable, but is not limited to, and is the helical coil structure of sputtering or plating.As shown in Figure 3 c, MEMS electric capacity comprises top electrode 2-1, bottom electrode 2-3 and middle dielectric layer 2-2.
The job operation of the acceleration sensing chip of the Internet of Things passive and wireless of the embodiment of the present invention, comprises the following steps:
Deposit one layer insulating on underlying substrate sheet, as Si
3n
4insulation course, and utilize the photoetching of standard and dry corrosion process to be removed by the insulation course of the periphery bond area of underlying substrate sheet;
Sputter layer of metal layer on the insulating layer, as aluminium Al;
The bottom electrode of MEMS electric capacity is obtained on the metal layer by photoetching and metal erosion technique, and the planar spiral structures of MEMS inductance and terminals, these terminals are connected with the bottom electrode of MEMS electric capacity;
Deposit one layer insulating on the metal layer, and remove redundance with the photoetching of standard and dry etching, and those terminals of the planar spiral structures of aforesaid MEMS inductance are formed a perforate, the metal level below perforate is exposed;
The other layer of metal layer of deposit on the insulating layer, the terminals of the planar spiral structures of this metal level and above-mentioned tapping form electrical connection, the planar spiral structures of required MEMS inductance is obtained again by photoetching and metal erosion technique, and the another one terminals of this planar spiral structures;
The bottom electrode metal level of MEMS electric capacity deposits one deck middle dielectric layer, as SiO
2, as the insulating dielectric layer of electric capacity;
At MEMS induction areas spin coating thick layer glue, as AZ4620, and make the figure of the planar spiral structures of MEMS inductance by lithography, recycling metal electroplating process, plating has certain thickness planar spiral inductor structure, as plating thick copper Cu;
Finally sputter another layer of metal level, obtained the top electrode of MEMS electric capacity by photoetching and etching process, and the connecting line of the another one terminals of this electrode and MEMS inductance planar spiral structures;
What utilize the photoetching of multistep standard and deep reaction ion etch process to make MEMS acceleration induction on brace summer and brace summer on the top of upper strata substrate slice can moving-conductor mass;
Utilize in the bottom of upper strata substrate slice standard photoetching and deep reaction ion etch process to realize bowl configurations, and realize the bond area of upper strata substrate slice and underlying substrate sheet;
At the bottom deposit layer of metal layer of upper strata substrate slice, and by the photoetching of standard and metal erosion technique, or stripping technology, remove remainder, only retaining can the metal layer part of moving-conductor mass bottom, this metal level can for but be not limited to noncrystal magnetically soft alloy, it has high magnetoconductivity, as Rhometal NiFe.
By upper strata substrate slice and underlying substrate sheet bonding, when upper strata substrate slice and underlying substrate sheet all adopt silicon chip, the MEMS Si V groove technique by standard connects into an entirety, as shown in Figure 5.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection domain that all should belong to claims of the present invention.
Claims (6)
1. a passive acceleration sensing chip, is characterized in that, comprises superstructure and understructure;
Described understructure comprises underlying substrate sheet, and this underlying substrate sheet is provided with MEMS electric capacity and the MEMS inductance of series connection;
Superstructure comprises upper strata substrate slice, MEMS acceleration induction can moving-conductor mass and brace summer, brace summer is connected with upper strata substrate slice, is fixed on above understructure, can be suspended in above MEMS inductance by brace summer by moving-conductor mass, metal level can be deposited with bottom moving-conductor mass; When acceleration sensing chip have perpendicular to this can the acceleration of moving-conductor mass time, this can move up and down by moving-conductor mass thereupon.
2. acceleration sensing chip according to claim 1, is characterized in that, upper strata substrate slice and underlying substrate sheet connect into an entirety by bonding technology.
3. acceleration sensing chip according to claim 2, is characterized in that, this brace summer is cruciform brace summer.
4. acceleration sensing chip according to claim 3, is characterized in that, can moving-conductor mass, brace summer and upper strata substrate slice be structure as a whole.
5. acceleration sensing chip according to claim 1, is characterized in that, the coil of MEMS inductance is the snail on underlying substrate sheet.
6. acceleration sensing chip according to claim 1, is characterized in that, can the metal level of deposit be noncrystal magnetically soft alloy layer bottom moving-conductor mass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420573499.0U CN204203262U (en) | 2014-09-30 | 2014-09-30 | A kind of passive acceleration sensing chip |
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|---|---|---|---|
| CN201420573499.0U CN204203262U (en) | 2014-09-30 | 2014-09-30 | A kind of passive acceleration sensing chip |
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| CN204203262U true CN204203262U (en) | 2015-03-11 |
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| CN201420573499.0U Expired - Fee Related CN204203262U (en) | 2014-09-30 | 2014-09-30 | A kind of passive acceleration sensing chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267214A (en) * | 2014-09-30 | 2015-01-07 | 武汉工程大学 | Passive and wireless acceleration sensing chip for internet of things and processing method thereof |
| CN107576821A (en) * | 2017-09-27 | 2018-01-12 | 东南大学 | Inductance cantilever beam wireless and passive acceleration transducer |
-
2014
- 2014-09-30 CN CN201420573499.0U patent/CN204203262U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267214A (en) * | 2014-09-30 | 2015-01-07 | 武汉工程大学 | Passive and wireless acceleration sensing chip for internet of things and processing method thereof |
| CN104267214B (en) * | 2014-09-30 | 2017-12-15 | 武汉工程大学 | The acceleration sensing chip and its processing method of Internet of Things passive and wireless |
| CN107576821A (en) * | 2017-09-27 | 2018-01-12 | 东南大学 | Inductance cantilever beam wireless and passive acceleration transducer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150311 Termination date: 20170930 |
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| CF01 | Termination of patent right due to non-payment of annual fee |