CN204198430U - A kind of polycrystalline silicon reducing furnace electrode structure - Google Patents

A kind of polycrystalline silicon reducing furnace electrode structure Download PDF

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Publication number
CN204198430U
CN204198430U CN201420677153.5U CN201420677153U CN204198430U CN 204198430 U CN204198430 U CN 204198430U CN 201420677153 U CN201420677153 U CN 201420677153U CN 204198430 U CN204198430 U CN 204198430U
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CN
China
Prior art keywords
insulation porcelain
base
tetrafluoro
porcelain cylinder
polycrystalline silicon
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420677153.5U
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Chinese (zh)
Inventor
赵建
盛斌
陈丞浩
王中华
朱敏
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SHUANGLIANG NEW ENERGY EQUIPMENT CO Ltd
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SHUANGLIANG NEW ENERGY EQUIPMENT CO Ltd
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Priority to CN201420677153.5U priority Critical patent/CN204198430U/en
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Publication of CN204198430U publication Critical patent/CN204198430U/en
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Abstract

The utility model relates to a kind of polycrystalline silicon reducing furnace electrode structure, comprise the tetrafluoro cover be embedded at base intracavity, lower end is plugged in the electrode body in described tetrafluoro cover, and the insulation porcelain cylinder be set on around described electrode body, described insulation porcelain cylinder part exposes more than described base, the head radial direction that described electrode body is exposed to more than described insulation porcelain cylinder forms outer shoulder, the part overcoat that described insulation porcelain cylinder is exposed to more than base has insulation porcelain ring, and described insulation porcelain ring upper/lower terminal is respectively arranged with gasket respectively with on the mating surface of described outer shoulder and base.This polycrystalline silicon reducing furnace electrode structure, achieves insulation porcelain cylinder, tetrafluoro cover and effective isolation of reaction furnace chamber, eliminates cleaning dead angle, conveniently cleaned out by electrode; In addition, avoid the impact that the high-temperature gas in reaction furnace chamber overlaps tetrafluoro, contribute to the work-ing life extending tetrafluoro cover.

Description

A kind of polycrystalline silicon reducing furnace electrode structure
Technical field
The utility model relates to a kind of polycrystalline silicon reducing furnace electrode structure.
Background technology
The starting method that current domestic improved Siemens produces polysilicon is all adopt high electrical breakdown, utilize the high-voltage of 8000 ~ 10000 volts that silicon core is punctured startup instantaneously, the insulating requirements of this starting method to electrode is higher, so all have employed the combined insulation mode of tetrafluoro insulation covering+insulating ceramic.Improved Siemens produces polysilicon in addition, need the hot environment that clean, can accelerate tetrafluoro due to hot environment overlaps aging, so need heat insulation for tetrafluoro insulation covering cooling, existing electrode for reduction furnace structure is general as shown in Figure 1, there is gap between its tetrafluoro cover and insulating ceramic, and communicate with reaction furnace chamber, all need to clean out in gap before starting so each, waste time and energy and do not say, if also have some impurity do not cleared up in gap also will affect polysilicon quality.Simultaneously high-temperature gas easily to be overlapped with tetrafluoro by gap and contacts, and makes tetrafluoro cover more be subject to temperatures involved, occurs aging soon.
Utility model content
Technical problem to be solved in the utility model provides a kind of polycrystalline silicon reducing furnace electrode structure, easy cleaning for above-mentioned prior art, effectively can completely cut off tetrafluoro cover simultaneously, prevents tetrafluoro from overlapping the impact being subject to high-temperature gas.
The technical scheme in the invention for solving the above technical problem is: a kind of polycrystalline silicon reducing furnace electrode structure, comprise the tetrafluoro cover be embedded at base intracavity, lower end is plugged in the electrode body in described tetrafluoro cover, and the insulation porcelain cylinder be set on around described electrode body, described insulation porcelain cylinder part exposes more than described base, the head radial direction that described electrode body is exposed to more than described insulation porcelain cylinder forms outer shoulder, the part overcoat that described insulation porcelain cylinder is exposed to more than base has insulation porcelain ring, on described insulation porcelain ring, lower two ends are respectively arranged with gasket respectively with on the mating surface of described outer shoulder and base.
Preferably, described insulation porcelain cylinder, insulation porcelain ring are respectively insulating silicon nitride porcelain cylinder, insulating silicon nitride porcelain ring.
During assembling, tetrafluoro cover is arranged in the inner chamber of base, is not exposed to more than base, for the lower end of electrode body provides insulation; Then corresponding tetrafluoro is enclosed within base and lays lower seal pad, insulation porcelain ring and upper gasket successively; Again the electrode body portion being coated with insulation porcelain cylinder is plugged in tetrafluoro cover, lock electrode body by mounting block, form sealing at the two ends up and down of insulation porcelain ring, thus insulation porcelain cylinder and tetrafluoro cover are effectively isolated with reaction chamber.
Compared with prior art, the utility model has the advantage of: by arranging sealing porcelain ring and gasket, insulation porcelain cylinder and tetrafluoro cover are effectively kept apart with reaction furnace chamber, eliminate the cleaning dead angle on electrode for reduction furnace, only need cleaning insulation porcelain ring outer surface before each blow-on, conveniently electrode is cleaned out; In addition, avoid the impact that the high-temperature gas in reaction furnace chamber overlaps tetrafluoro, contribute to the work-ing life extending tetrafluoro cover.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of polycrystalline silicon reducing furnace electrode structure in prior art;
Fig. 2 is the schematic diagram of polycrystalline silicon reducing furnace electrode structure in the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing embodiment, the utility model is described in further detail.
As shown in Figure 2, polycrystalline silicon reducing furnace electrode structure in the present embodiment, comprise the tetrafluoro cover 6 be embedded at base 7 inner chamber, lower end is plugged in the electrode body 1 in tetrafluoro cover 6, and the insulation porcelain cylinder 4 be set on around electrode body 1, insulation porcelain cylinder 4 part exposes base more than 7, the head radial direction that electrode body 1 is exposed to insulation porcelain cylinder more than 4 forms outer shoulder 1.1, the part overcoat that insulation porcelain cylinder 4 is exposed to base more than 7 has insulation porcelain ring 3, and insulation porcelain ring 3 upper/lower terminal is respectively arranged with upper and lower gasket 2,5 respectively with on the mating surface of described outer shoulder 1.1 and base 7.
In the present embodiment, insulation porcelain cylinder 4, insulation porcelain ring 3 are respectively insulating silicon nitride porcelain cylinder, insulating silicon nitride porcelain ring.
During assembling, tetrafluoro cover 6 is arranged in the inner chamber of base 7, is not exposed to base more than 7, for the lower end of electrode body 1 provides insulation; Then corresponding tetrafluoro cover 6 lays lower seal pad 5, insulation porcelain ring 3 and upper gasket 2 successively on base 7; Again electrode body 1 part being coated with insulation porcelain cylinder 4 is plugged in tetrafluoro cover 6, by mounting block locking electrode body 1, form sealing at the two ends up and down of insulation porcelain ring 3, thus insulation porcelain cylinder 4 and tetrafluoro cover 6 are effectively isolated with reaction chamber.
The polycrystalline silicon reducing furnace electrode structure of said structure, achieves insulation porcelain cylinder, tetrafluoro cover and effective isolation of reaction furnace chamber, eliminates cleaning dead angle, conveniently cleaned out by electrode; In addition, avoid the impact that the high-temperature gas in reaction furnace chamber overlaps tetrafluoro, contribute to the work-ing life extending tetrafluoro cover.

Claims (2)

1. a polycrystalline silicon reducing furnace electrode structure, comprise the tetrafluoro cover (6) be embedded at base (7) inner chamber, lower end is plugged in the electrode body (1) in described tetrafluoro cover (6), with the insulation porcelain cylinder (4) be set on around described electrode body (1), described insulation porcelain cylinder (4) part exposes more than described base (7), it is characterized in that: the head radial direction that described electrode body (1) is exposed to more than described insulation porcelain cylinder (4) forms outer shoulder (1.1), the part overcoat that described insulation porcelain cylinder (4) is exposed to more than base (7) has insulation porcelain ring (3), on described insulation porcelain ring (3), lower two ends are respectively arranged with gasket (2 respectively with on the mating surface of described outer shoulder (1.1) and base (7), 5).
2. polycrystalline silicon reducing furnace electrode structure according to claim 1, is characterized in that: described insulation porcelain cylinder (4), insulation porcelain ring (3) are respectively insulating silicon nitride porcelain cylinder, insulating silicon nitride porcelain ring.
CN201420677153.5U 2014-11-14 2014-11-14 A kind of polycrystalline silicon reducing furnace electrode structure Expired - Fee Related CN204198430U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420677153.5U CN204198430U (en) 2014-11-14 2014-11-14 A kind of polycrystalline silicon reducing furnace electrode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420677153.5U CN204198430U (en) 2014-11-14 2014-11-14 A kind of polycrystalline silicon reducing furnace electrode structure

Publications (1)

Publication Number Publication Date
CN204198430U true CN204198430U (en) 2015-03-11

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CN201420677153.5U Expired - Fee Related CN204198430U (en) 2014-11-14 2014-11-14 A kind of polycrystalline silicon reducing furnace electrode structure

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CN (1) CN204198430U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111366215A (en) * 2020-04-09 2020-07-03 长春锅炉仪表程控设备股份有限公司 Composite ceramic electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111366215A (en) * 2020-04-09 2020-07-03 长春锅炉仪表程控设备股份有限公司 Composite ceramic electrode

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150311