CN204190762U - High-frequency model, transmitting filter module, receiving filter module - Google Patents
High-frequency model, transmitting filter module, receiving filter module Download PDFInfo
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- CN204190762U CN204190762U CN201290000837.0U CN201290000837U CN204190762U CN 204190762 U CN204190762 U CN 204190762U CN 201290000837 U CN201290000837 U CN 201290000837U CN 204190762 U CN204190762 U CN 204190762U
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- Prior art keywords
- filter
- substrate
- frequency model
- transmitting
- match circuit
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
- H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
- H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
Abstract
The utility model provides a kind of structure simple and can guarantee the high-frequency model of the isolation between sufficiently high reception and transmission.High-frequency model (10) comprises transmitting filter module (30Tx), receiving filter module (30Rx) and switch element (20).Transmitting filter module (30Tx), receiving filter module (30Rx) and switch element (20) are arranged on mother substrate (90).Transmitting filter module (30Tx) is made up of transmitter side basal substrate (40Tx) and the transmitter side SAW filter (31Tx, 32Tx, 33Tx, 34Tx) be arranged on this transmitter side basal substrate (40Tx).Receiving filter module (30Rx) is made up of transmitter side basal substrate (40Rx), the receiver side SAW filter (31Rx, 32Rx, 33Rx, 34Rx) be arranged on this transmitter side basal substrate (40Rx).
Description
Technical field
The present invention relates to and utilize common antenna to receive and dispatch the high-frequency model of multiple signal of communication.
Background technology
In the past, as the high-frequency model in middle front ends used such as mobile communication terminals, had and utilize common antenna to receive and dispatch the high-frequency model of multiple signal of communication.Such as, Figure 11 is the circuit structure diagram of existing high-frequency model 10P.
High-frequency model 10P comprises switch element 20.Switch element 20 based on control signal by common terminal P
iC(ANT0) with multiple independent terminals P
iC(RF1), P
iC(RF2), P
iC(RF3), P
iC(RF4) any one in is connected.Common terminal P
iC(ANT0) via the sub-P of antenna connection terminal of match circuit 50P and high-frequency model 10P
m(ANT0) be connected.
Independent terminals P
iC(RF1) be connected with SAW duplexer 31DPX via match circuit 41P.SAW duplexer 31DPX is made up of transmitter side SAW filter 31Tx and receiver side SAW filter 31Rx.The 1st of transmitter side SAW filter 31Tx and high-frequency model 10P sends signal input terminal P
m(Tx1) be connected.The 1st Received signal strength lead-out terminal P of receiver side SAW filter 31Rx and high-frequency model 10P
m(Rx1) be connected.
Independent terminals P
iC(RF2) be connected with SAW duplexer 32DPX via match circuit 42P.SAW duplexer 32DPX is made up of transmitter side SAW filter 32Tx and receiver side SAW filter 32Rx.The 2nd of transmitter side SAW filter 32Tx and high-frequency model 10P sends signal input terminal P
m(Tx2) be connected.The 2nd Received signal strength lead-out terminal P of receiver side SAW filter 32Rx and high-frequency model 10P
m(Rx2) be connected.
Independent terminals P
iC(RF3) be connected with SAW duplexer 33DPX via match circuit 43P.SAW duplexer 33DPX is made up of transmitter side SAW filter 33Tx and receiver side SAW filter 33Rx.The 3rd of transmitter side SAW filter 33Tx and high-frequency model 10P sends signal input terminal P
m(Tx3) be connected.The 3rd Received signal strength lead-out terminal P of receiver side SAW filter 33Rx and high-frequency model 10P
m(Rx3) be connected.
Independent terminals P
iC(RF4) be connected with SAW duplexer 34DPX via match circuit 44P.SAW duplexer 34DPX is made up of transmitter side SAW filter 34Tx and receiver side SAW filter 34Rx.The 4th of transmitter side SAW filter 34Tx and high-frequency model 10P sends signal input terminal P
m(Tx4) be connected.The 4th Received signal strength lead-out terminal P of receiver side SAW filter 34Rx and high-frequency model 10P
m(Rx4) be connected.
In the SAW duplexer used in so existing high-frequency model 10P, as Patent Document 1, make relative to a kind of transmitter side SAW filter of signal of communication and receiver side SAW filter paired, and these transmitter side SAW filter and receiver side SAW filter to be encapsulated in a housing integratedly.But, if merely transmitter side SAW filter and receiver side SAW filter are encapsulated integratedly, then transmitter side SAW filter and receiver side SAW filter closer to each other, therefore, the signal of communication between filter can be caused to leak, thus cause isolation to decline.Therefore, in patent documentation 1, between transmitter side SAW filter and receiver side SAW filter, be configured with metal barricade.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2010-177559 publication
Summary of the invention
Invent problem to be solved
But, in the structure of patent documentation 1, due to barricade must be arranged between transmitting filter and receiving filter, therefore, the component counts as high-frequency model can be increased.In addition, when receiving and dispatching the high-frequency model of multiple signal of communication, not only relative between the transmitting filter of a signal of communication and receiving filter, and also must barricade be set between the transmitting filter and receiving filter of other signal of communication be close, the quantity of barricade also can increase significantly.Therefore, the cost increase of high-frequency model, and the shape of barricade becomes complicated, the structure of high-frequency model becomes complicated, such as, can produce degradation problem under the qualification rate that manufactures a product.
Therefore, the object of the present invention is to provide a kind of high-frequency model, this high-frequency model structure is simple, and possesses sufficiently high isolation between guaranteeing reception and sending.
The technical scheme that technical solution problem adopts
The present invention relates to a kind of high-frequency model, this high-frequency model comprises: the group of multiple transmitting filter and receiving filter, and the group of the plurality of transmitting filter and receiving filter is arranged for each signal of communication; And switch element, this switch element switches the common terminal of the group of transmitting filter and receiving filter, and is connected with antenna.This high-frequency model comprises: the 1st substrate, and the 1st substrate is mounted with the transmitting filter respectively organized in transmitting filter and receiving filter multiple groups; And the 2nd substrate, the 2nd substrate is mounted with the receiving filter respectively organized in transmitting filter and receiving filter multiple groups.
In the structure shown here, transmitting filter group and receiving filter group are arranged on different substrates, and these substrates are arranged on mother substrate, therefore, compared with existing structure transmitting filter and receiving filter formed as one, the distance of transmitting filter and receiving filter can be separated.Thus, the isolation between transmitting filter and receiving filter can be improved.In addition, by transmitting filter group being intensively arranged on the 1st substrate, receiving filter group is intensively arranged on the 2nd substrate, thus when being installed on mother substrate, each bank of filters can be processed as components and parts, can easily manufacture.
In addition, in high-frequency model of the present invention, following structure is preferably.1st substrate is formed the electrode pattern of transmitter side match circuit, and the electrode pattern of this transmitter side match circuit is connected to each transmitting filter and between the common terminal be connected with this transmitting filter.2nd substrate is formed the electrode pattern of receiver side match circuit, and the electrode pattern of this receiver side match circuit is connected to each receiving filter and between the common terminal be connected with this receiving filter.
In the structure shown here, the transmitter side match circuit be connected with each transmitting filter, the receiver side match circuit that is connected with each receiving filter are built in the 1st, the 2nd substrate, therefore, also can not form these match circuits in mother substrate side.Therefore, if the 1st, the 2nd substrate is suitably arranged on mother substrate, then can obtain relative between reception with transmitting filter, transmitting filter and mating between receiving filter with switch element.Thus, the design of mother substrate side becomes easy.
In addition, the 1st substrate of high-frequency model of the present invention is provided with switch element, the electrode pattern to the antenna side match circuit mated between switch element and antenna can also be formed.
In the structure shown here, switch element is installed on the 1st substrate together with transmitting filter group.Thus, the circuit be made up of can be formed as small-sized switch element and transmitting filter, and also can form the connecting circuit of transmitting filter group and switch element in the 1st substrate, the design of mother substrate becomes and is more prone to.
In addition, be preferably on the 1st substrate of high-frequency model of the present invention, between the electrode pattern and the electrode pattern of antenna side match circuit of transmitter side match circuit, form earthing conductor.
In the structure shown here, the isolation between the transmitter side match circuit being formed at the 1st substrate and antenna side match circuit can be improved.
In addition, be preferably high-frequency model of the present invention and comprise compound transmitting filter, transmitting filter close for passband in multiple transmitting filter forms as one by this compound transmitting filter, and this compound transmitting filter is arranged on the 1st substrate.
In the structure shown here, the module miniaturization be made up of transmitting filter group can be made.
In addition, be preferably high-frequency model of the present invention and comprise compound receiving filter, receiving filter close for passband in multiple receiving filter forms as one by this compound receiving filter, and this compound receiving filter is arranged on the 2nd substrate.
In the structure shown here, the module miniaturization be made up of receiving filter group can be made.
In addition, high-frequency model of the present invention can also comprise the 3rd substrate being provided with the 1st substrate and the 2nd substrate.
In the structure shown here, the 1st substrate and the 2nd substrate can be concentrated is a circuit components, and suitably sets interval between the 1st substrate and the 2nd substrate and wiring by the 3rd substrate.And, when needing the LC filter circuit different from above-mentioned acoustic wave filter, can be arranged on the 3rd substrate.Thus, the isolation between above-mentioned transceiving filter can be guaranteed, the circuit module of compound more intensively can be formed as a circuit components.
In addition, be preferably on the 3rd substrate of high-frequency model of the present invention, between the installation site of the 1st substrate and the installation site of the 2nd substrate, other circuit components be installed.
In the structure shown here, by configuring other circuit element between the 1st substrate and the 2nd substrate, the 1st substrate separates the size corresponding with this other circuit element to the 2nd substrate thus, can improve isolation.
In addition, in high-frequency model of the present invention, transmitting filter and receiving filter can also be set to acoustic wave filter.In the structure shown here, the concrete kind of transmitting filter and receiving filter is shown.
In addition, the present invention is the transmitting filter module be applied in high-frequency model, this high-frequency model comprises the group of multiple transmitting filter and receiving filter, the group of the plurality of transmitting filter and receiving filter is arranged for each signal of communication, and the transmitting filter respectively organized in transmitting filter and receiving filter multiple groups is loaded on the 1st substrate.
In the structure shown here, transmitting filter module is formed on the 1st substrate, therefore, without the need to being arranged on independently on the substrate of high-frequency model by multiple transmitting filter, can simplify the manufacturing process of high-frequency model.
In addition, the present invention is the receiving filter module be applied in high-frequency model, this high-frequency model comprises the group of multiple transmitting filter and receiving filter, the group of the plurality of transmitting filter and receiving filter is arranged for each signal of communication, and the receiving filter respectively organized in transmitting filter and receiving filter multiple groups is loaded on the 2nd substrate.
In the structure shown here, receiving filter module is formed on the 2nd substrate, therefore, without the need to being arranged on independently on the substrate of high-frequency model by multiple receiving filter, can simplify the manufacturing process of high-frequency model.
The effect of invention
According to the present invention, without the need to using complicated structure just can realize a kind of high-frequency model, this high-frequency model can guarantee isolation higher between transmission circuit.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the high-frequency model 10 involved by embodiments of the present invention 1.
The construction profile that the construction profile that Fig. 2 A is the vertical view of high-frequency model 10 involved by execution mode 1, Fig. 2 B is transmitting filter module 30Tx side, Fig. 2 C are receiving filter module 30Rx sides.
The construction profile that the construction profile that Fig. 3 A is the transmitting filter module 30Tx of high-frequency model 10 involved by execution mode 1, Fig. 3 B are receiving filter module 30Rx.
The construction profile that the vertical view that Fig. 4 A is high-frequency model 10A involved by execution mode 2, Fig. 4 B are transmitting filter module 30Tx sides.
Fig. 5 is the construction profile of the transmitting filter module 30Tx of high-frequency model 10A involved by execution mode 2.
Fig. 6 is the circuit structure diagram of the high-frequency model 10B involved by execution mode 3.
The construction profile that the construction profile that Fig. 7 A is the vertical view of high-frequency model 10B involved by execution mode 3, Fig. 7 B is transmitting filter module 30Tx side, Fig. 7 C are receiving filter module 30BRx sides.
Fig. 8 is the construction profile of the transmitting filter module 30Tx of high-frequency model 10C involved by execution mode 4.
Fig. 9 is the vertical view of the high-frequency model 10D involved by execution mode 5.
Figure 10 is the vertical view of the high-frequency model 10D involved by execution mode 6.
Figure 11 is the circuit structure diagram of existing high-frequency model 10P.
Embodiment
With reference to accompanying drawing, the high-frequency model involved by embodiments of the present invention 1 is described.Fig. 1 is the circuit structure diagram of the high-frequency model 10 involved by embodiments of the present invention 1.In addition, in the present embodiment, the high-frequency model of respective not on all four 1st signal of communication of frequency band of transmitting-receiving (the 1st sends signal and the 1st Received signal strength), the 2nd signal of communication (the 2nd sends signal and the 2nd Received signal strength), the 3rd signal of communication (the 3rd sends signal and the 3rd Received signal strength), the 4th signal of communication (the 4th sends signal and the 4th Received signal strength) is described.In addition, the species number carrying out the signal of communication received and dispatched is not limited to this, suitably can set according to the telecommunications metrics of high-frequency model.In addition, the following shows the example using SAW filter, but also can use other filters such as BAW filter.
High-frequency model 10 comprises switch element 20.Switch element 20 based on control signal by common terminal P
iC(ANT0) with multiple independent terminals P
iC(RF1), P
iC(RF2), P
iC(RF3), P
iC(RF4) any one in is connected.
Common terminal P
iC(ANT0) via the antenna connection terminal P of match circuit 50 with high-frequency model 10P
m(ANT0) be connected.Match circuit 50 is the common terminal P all signals of communication being carried out to antenna ANT and switch element 20
iC(ANT0) circuit of the impedance matching between.The sub-P of antenna connection terminal
m(ANT0) be connected with outside antenna ANT.
Independent terminals P
iC(RF1) be connected with transmitter side SAW filter 31Tx via transmitter side match circuit 41Tx.Transmitter side SAW filter 31Tx sends the baseband of signal as passband and using the filter of other frequency band as attenuation band using the 1st.The 1st of transmitter side SAW filter 31Tx and high-frequency model 10 sends signal input terminal P
m(Tx1) be connected.Send signal input terminal input the 1st to the 1st and send signal.
Independent terminals P
iC(RF1) be connected with receiver side SAW filter 31Rx via receiver side match circuit 41Rx.Receiver side SAW filter 31Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 1st Received signal strength.1st Received signal strength lead-out terminal P of receiver side SAW filter 31Rx and high-frequency model 10
m(Rx1) be connected.The 1st Received signal strength is exported from the 1st Received signal strength lead-out terminal.
Transmitter side match circuit 41Tx sends signal to the 1st and carries out impedance matching, to make the independent terminals P of switch element 20
iC(RF1) with transmitter side SAW filter 31Tx conducting, and carry out impedance matching together with receiver side match circuit 41Rx, open a way to make transmitter side SAW filter 31Tx and receiver side SAW filter 31Rx.
Receiver side match circuit 41Rx carries out impedance matching to the 1st Received signal strength, to make the independent terminals P of switch element 20
iC(RF1) with receiver side SAW filter 31Rx conducting, and carry out impedance matching together with transmitter side match circuit 41Tx, open a way to make receiver side SAW filter 31Rx and transmitter side SAW filter 31Tx.
Independent terminals P
iC(RF2) be connected with transmitter side SAW filter 32Tx via transmitter side match circuit 42Tx.Transmitter side SAW filter 32Tx sends the baseband of signal as passband and using the filter of other frequency band as attenuation band using the 2nd.The 2nd of transmitter side SAW filter 32Tx and high-frequency model 10 sends signal input terminal P
m(Tx2) be connected.Send signal input terminal input the 2nd to the 2nd and send signal.
Independent terminals P
iC(RF2) be connected with receiver side SAW filter 32Rx via receiver side match circuit 42Rx.Receiver side SAW filter 32Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 2nd Received signal strength.2nd Received signal strength lead-out terminal P of receiver side SAW filter 32Rx and high-frequency model 10
m(Rx2) be connected.The 2nd Received signal strength is exported from the 2nd Received signal strength lead-out terminal.
Transmitter side match circuit 42Tx sends signal to the 2nd and carries out impedance matching, to make the independent terminals P of switch element 20
iC(RF2) with transmitter side SAW filter 32Tx conducting, and carry out impedance matching together with receiver side match circuit 42Rx, open a way to make transmitter side SAW filter 32Tx and receiver side SAW filter 32Rx.
Receiver side match circuit 42Rx carries out impedance matching to the 2nd Received signal strength, to make the independent terminals P of switch element 20
iC(RF2) with receiver side SAW filter 32Rx conducting, and carry out impedance matching together with transmitter side match circuit 42Tx, open a way to make receiver side SAW filter 32Rx and transmitter side SAW filter 32Tx.
Independent terminals P
iC(RF3) be connected with transmitter side SAW filter 33Tx via transmitter side match circuit 43Tx.Transmitter side SAW filter 33Tx sends the baseband of signal as passband and using the filter of other frequency band as attenuation band using the 3rd.Transmitter side SAW filter 33Tx and the 3rd of high-frequency model 10 send signal input terminal PM (Tx3) and are connected.Send signal input terminal input the 3rd to the 3rd and send signal.
Independent terminals P
iC(RF3) be connected with receiver side SAW filter 33Rx via receiver side match circuit 43Rx.Receiver side SAW filter 33Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 3rd Received signal strength.3rd Received signal strength lead-out terminal P of receiver side SAW filter 33Rx and high-frequency model 10
m(Rx3) be connected.The 3rd Received signal strength is exported from the 3rd Received signal strength lead-out terminal.
Transmitter side match circuit 43Tx sends signal to the 3rd and carries out impedance matching, to make the independent terminals P of switch element 20
iC(RF3) with transmitter side SAW filter 33Tx conducting, and carry out impedance matching open a way to make transmitter side SAW filter 33Tx and receiver side SAW filter 33Rx together with receiver side match circuit 43Rx.
Receiver side match circuit 43Rx carries out impedance matching to the 3rd Received signal strength, to make the independent terminals P of switch element 20
iC(RF3) with receiver side SAW filter 33Rx conducting, and carry out impedance matching together with transmitter side match circuit 43Tx, open a way to make receiver side SAW filter 33Rx and transmitter side SAW filter 33Tx.
Independent terminals P
iC(RF4) be connected with transmitter side SAW filter 34Tx via transmitter side match circuit 44Tx.Transmitter side SAW filter 34Tx sends the baseband of signal as passband and using the filter of other frequency band as attenuation band using the 4th.The 4th of transmitter side SAW filter 34Tx and high-frequency model 10 sends signal input terminal P
m(Tx4) be connected.Send signal input terminal input the 4th to the 4th and send signal.
Independent terminals P
iC(RF4) be connected with receiver side SAW filter 34Rx via receiver side match circuit 44Rx.Receiver side SAW filter 34Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 3rd Received signal strength.4th Received signal strength lead-out terminal P of receiver side SAW filter 34Rx and high-frequency model 10
m(Rx4) be connected.The 4th Received signal strength is exported from the 4th Received signal strength lead-out terminal.
Transmitter side match circuit 44Tx sends signal to the 4th and carries out impedance matching, to make the independent terminals P of switch element 20
iC(RF4) with transmitter side SAW filter 34Tx conducting, and carry out impedance matching together with receiver side match circuit 44Rx, open a way to make transmitter side SAW filter 34Tx and receiver side SAW filter 34Rx.
Receiver side match circuit 44Rx carries out impedance matching to make the independent terminals PIC (RF4) of switch element 20 and receiver side SAW filter 34Rx conducting to the 4th Received signal strength, and carries out impedance matching open a way to make receiver side SAW filter 34Rx and transmitter side SAW filter 34Tx together with transmitter side match circuit 44Tx.
In this high-frequency model 10, when transmission the 1st send signal and at reception the 1st Received signal strength (at transmitting-receiving the 1st signal of communication), make common terminal P
iC(ANT0) with independent terminals P
iC(RF1) be connected.In addition, in high-frequency model 10, when transmission the 2nd send signal and at reception the 2nd Received signal strength (at transmitting-receiving the 2nd signal of communication), make common terminal P
iC(ANT0) with independent terminals P
iC(RF2) be connected.In addition, in high-frequency model 10, when transmission the 3rd send signal and at reception the 3rd Received signal strength (at transmitting-receiving the 3rd signal of communication), make common terminal P
iC(ANT0) with independent terminals P
iC(RF3) be connected.In addition, in high-frequency model 10, when transmission the 4th send signal and at reception the 4th Received signal strength (at transmitting-receiving the 4th signal of communication), make common terminal P
iC(ANT0) with independent terminals P
iC(RF4) be connected.
The high-frequency model 10 be made up of such circuit structure is achieved by the structure shown in Fig. 2 A, Fig. 2 B, Fig. 2 C, Fig. 3 A, Fig. 3 B.Fig. 2 A is the vertical view of the high-frequency model 10 involved by execution mode 1, and Fig. 2 B is the construction profile of the transmitting filter module 30Tx side of high-frequency model 10, and Fig. 2 C is the construction profile of the receiving filter module 30Rx side of high-frequency model 10.Fig. 3 A is the construction profile of the transmitting filter module 30Tx of high-frequency model 10 involved by execution mode 1, and Fig. 3 B is the construction profile of the receiving filter module 30Rx of high-frequency model 10.In addition, not shown conductive vias in Fig. 3 A, Fig. 3 B, but in order to realize the circuit structure shown in Fig. 1, suitably define conductive vias.
With the installation pattern of regulation, transmitter side SAW filter 31Tx, 32Tx, 33Tx, 34Tx are arranged on the surface of transmitter side basal substrate 40Tx.Such as, when Fig. 2 A, Fig. 2 B, be arranged in the mode of row to install transmitter side SAW filter 31Tx, 32Tx, 33Tx, 34Tx to separate predetermined distance.
Transmitter side basal substrate 40Tx (being equivalent to the 1st substrate of the present invention) is formed by duplexer, and this duplexer is by being laminated multilayer (being 7 layers when Fig. 3 A) dielectric layer 401t, 402t, 403t, 404t, 405t, 406t, 407t.The surface of transmitter side basal substrate 40Tx is formed not shown installation terminal pad, and by solder or conductive adhesive etc., transmitter side SAW filter 31Tx, 32Tx, 33Tx, 34Tx is installed.
On roughly whole that becomes the interface between the dielectric layer 401t of the superiors and the dielectric layer 402t becoming the 2nd layer, be formed with internal layer grounding electrode DP
g1.From dielectric layer 402t to dielectric layer 406t, be formed with the electrode pattern DP realizing transmitter side match circuit 41Tx
41TX, realize the electrode pattern DP of transmitter side match circuit 42Tx
42TX, realize the electrode pattern DP of transmitter side match circuit 43Tx
43TX, and realize the electrode pattern DP of transmitter side match circuit 44Tx
44TX.The electrode pattern DP of transmitter side match circuit 41Tx will be realized
41TXunder being formed in the installation region of transmitter side SAW filter 31Tx.The electrode pattern DP of transmitter side match circuit 42Tx will be realized
42TXunder being formed in the installation region of transmitter side SAW filter 32Tx.The electrode pattern DP of transmitter side match circuit 43Tx will be realized
43TXunder being formed in the installation region of transmitter side SAW filter 33Tx.The electrode pattern DP of transmitter side match circuit 44Tx will be realized
44TXunder being formed in the installation region of transmitter side SAW filter 34Tx.In addition, each transmitter side SAW filter is connected via cloth line electrode or through hole electrode with the transmitter side match circuit be formed under its installation region, and this cloth line electrode or through hole electrode are arranged on and are formed at internal layer grounding electrode DP
g1breach or space in.
At dielectric layer 406t and become on roughly whole of interface between undermost dielectric layer 407t, be formed with internal layer grounding electrode DP
g2.At the back side of dielectric layer 407t, i.e. the back side of transmitter side basal substrate 40Tx, be formed with outside terminal for connecting.In addition, each transmitter side match circuit is connected via cloth line electrode or through hole electrode with external connection terminals, and this cloth line electrode or through hole electrode are arranged on and are formed at internal layer grounding electrode DP
g2breach or space in.
By such structure, the transmitting filter module 30Tx shown in Fig. 2 A, Fig. 2 B is achieved.
With the installation pattern of regulation, receiver side SAW filter 31Rx, 32Rx, 33Rx, 34Rx are arranged on the surface of receiver side basal substrate 40Rx.Such as, when Fig. 2 A, Fig. 2 C, be arranged in the mode of row to install receiver side SAW filter 31Rx, 32Rx, 33Rx, 34Rx to separate predetermined distance.
Receiver side basal substrate 40Rx (being equivalent to the 2nd substrate of the present invention) is formed by duplexer, and this duplexer is by being laminated multilayer (being 6 layers when Fig. 3 B) dielectric layer 401r, 402r, 403r, 404r, 405r, 406r.The surface of receiver side basal substrate 40Rx is formed not shown installation terminal pad, and by solder or conductive adhesive etc., receiver side SAW filter 31Rx, 32Rx, 33Rx, 34Rx is installed.
On roughly whole that becomes the interface between the dielectric layer 401r of the superiors and the dielectric layer 402r becoming the 2nd layer, be formed with internal layer grounding electrode DP
g3.From dielectric layer 402r to dielectric layer 405r, be formed with the electrode pattern DP realizing receiver side match circuit 41Rx
41RX, realize the electrode pattern DP of receiver side match circuit 42Rx
42RX, realize the electrode pattern DP of receiver side match circuit 43Rx
43RX, and realize the electrode pattern DP of receiver side match circuit 44Rx
44RX.The electrode pattern DP of receiver side match circuit 41Rx will be realized
41RXunder being formed in the installation region of receiver side SAW filter 31Rx.The electrode pattern DP of receiver side match circuit 42Rx will be realized
42RXunder being formed in the installation region of receiver side SAW filter 32Rx.The electrode pattern DP of receiver side match circuit 43Rx will be realized
43RXunder being formed in the installation region of receiver side SAW filter 33Rx.The electrode pattern DP of transmitter side match circuit 44Rx will be realized
44RXunder being formed in the installation region of receiver side SAW filter 34Rx.In addition, each receiver side SAW filter is connected via cloth line electrode or through hole electrode with the receiver side match circuit be formed under its installation region, and this cloth line electrode or through hole electrode are arranged on and are formed at internal layer grounding electrode DP
g3breach or space in.
At dielectric layer 405r and become on roughly whole of interface between undermost dielectric layer 406r, be formed with internal layer grounding electrode DP
g4.At the back side of dielectric layer 406r, i.e. the back side of receiver side basal substrate 40Rx, be formed with outside terminal for connecting.In addition, each receiver side match circuit is connected via cloth line electrode or through hole electrode with external connection terminals, and this cloth line electrode or through hole electrode are arranged on and are formed at internal layer grounding electrode DP
g4breach or space in.
By such structure, the receiving filter module 30Rx shown in Fig. 2 A, Fig. 2 C is achieved.
Be arranged on by the transmitting filter module 30Tx of above Structure composing and receiving filter module 30Rx on the mother substrate (below only referred to as mother substrate 90) of the mother substrate of mobile communication terminal or the communication module of this mobile communication terminal in the mode at the interval separating regulation.In addition, this mother substrate 90 is provided with switch element 20.Mother substrate 90 is formed the part except the switch element 20 in high-frequency model 10, transmitting filter module 30Tx and receiving filter module 30Rx, and switch element 20, transmitting filter module 30Tx are connected by the circuit being formed at mother substrate 90 with receiving filter module 30Rx.In at least switch element 20 of mother substrate 90, the installation region of transmitting filter module 30Tx and receiving filter module 30Rx, be coated with the insulating properties protective materials 60 such as epoxy resin.
By having such structure, as compared to using the existing situation by the duplexer obtained after transmitting filter and receiving filter integration, can make between transmitting filter group and receiving filter group spaced apart.Thus, can guarantee to receive the isolation between transmission with circuit structure, and signal can be suppressed for physically receiving the transmission between transmission, improve isolation further.
In addition, by multiple transmitter side SAW filter 31Tx-34Tx is formed as one as transmitting filter module 30Tx, and multiple transmitter side SAW filter 31Tx-34Tx is installed to independently compared with the situation on mother substrate 90, can more easily installs.Similarly, by multiple receiver side SAW filter 31Rx-34Rx is formed as one as receiving filter module 30Rx, and multiple receiver side SAW filter 31Rx-34Rx is installed to independently compared with the situation on mother substrate 90, can more easily installs.
And, as mentioned above, by advance match circuit being built in transmitter side basal substrate 40Tx and receiver side basal substrate 40Rx, without the need to arranging these match circuits on mother substrate 90.Therefore, the design of mother substrate 90 becomes easy, can also improve the design freedom of other circuit, and mother substrate 90 can be made small-sized and low clearance.In addition, for the electrode pattern of such match circuit, also at least one party of transmitter side and receiver side can be arranged on mother substrate 90 side, but for the foregoing reasons, preferably be arranged on both transmitter side basal substrate 40Tx and receiver side basal substrate 40Rx.
In addition, the electrode pattern of the match circuit in the electrode pattern of the match circuit in transmitter side basal substrate 40Tx and receiver side basal substrate 40Rx is not limited to the example of Fig. 3 A, Fig. 3 B, can suitably carry out being formed to obtain desired impedance matching.Wherein, as shown in Fig. 3 A, Fig. 3 B, internal layer grounding electrode is utilized to clamp the electrode pattern of match circuit, and the electrode pattern of the match circuit relative to each filter is formed separatedly, thus the isolation between match circuit and the isolation between match circuit and other element (such as SAW filter) can be guaranteed.
As mentioned above, if use the structure of present embodiment, then can realize a kind of structure simple and the high-frequency model of the isolation between transmission circuit can be guaranteed preferably.
Next, with reference to accompanying drawing, the high-frequency model involved by execution mode 2 is described.Fig. 4 A is the vertical view of the high-frequency model 10A involved by execution mode 2, and Fig. 4 B is the construction profile of the transmitting filter module 30ATx side of high-frequency model 10A.Fig. 5 is the construction profile of the transmitting filter module 30ATx of high-frequency model 10A involved by execution mode 2.
The high-frequency model 10A of present embodiment corresponds to the high-frequency model 10 shown in execution mode 1, identical with the circuit structure shown in Fig. 1, and transmitter side basal substrate 40ATx is provided with switch element 20.Therefore, only different parts is described.
The surface of transmitter side basal substrate 40Atx is provided with transmitter side SAW filter 31Tx-34Tx, and switch element 20 is installed.From the dielectric layer 402t to dielectric layer 405t of transmitter side basal substrate 40ATx, be formed with the electrode pattern DP realizing match circuit 50
50A.Switch element 20 and the electrode pattern DP realizing transmitter side match circuit 41Tx-44Tx
41Tx-DP
44Txconnect by being formed in transmitter side basal substrate 40ATx, not shown electrode pattern.
Utilize such structure, the composite module of transmitting filter module 30ATx and switch element 20 can be formed.Thus, and form these transmitting filters module 30ATx independently and compare with the situation of switch element 20, miniaturization can be realized.In addition, the design of mother substrate 90 becomes easy, can also improve design freedom.
Realizing the electrode pattern DP of match circuit 50
50Awith the electrode pattern DP realizing transmitter side match circuit 41Tx-44Tx
41Tx-DP
44Txbetween, be equipped with conductive vias (earthing conductor) TH of the shape being configured to extend in the stacking direction
g.Conductive vias TH
gtwo ends respectively with internal layer grounding electrode DP
g1, DP
g2be connected.Utilize such structure, the electrode pattern DP realizing match circuit 50 can be suppressed
50Awith the electrode pattern DP realizing transmitter side match circuit 41Tx-44Tx
41Tx-DP
44Txbetween electromagnetic field couples, the isolation between the independent terminals side (transmitter side) of switch element 20 and antenna side can be improved.That is, can by isolation characteristic excellence, the composite module of transmitting filter module 30ATx and switch element 20 is formed as small-sized.Thus, the small-sized high-frequency model of isolation characteristic excellence can be realized.
In addition, also switch element 20 can be arranged on the receiver side basal substrate 40Rx of receiving filter module 30Rx.But the power sending the power ratio Received signal strength of signal wants high, and the impact of circuit on other circuit and circuit components that transmission sends signal is larger.Therefore, switch element 20 being arranged on transmitting filter module 30ATx side and more can suppressing such harmful effect, is comparatively suitable.
Next, with reference to accompanying drawing, the high-frequency model involved by execution mode 3 is described.Fig. 6 is the circuit structure diagram of the high-frequency model 10B involved by execution mode 3.
The high-frequency model 10B of present embodiment corresponds to the high-frequency model 10 shown in execution mode 1, further, the 5th signal of communication (the 5th sends signal and the 5th Received signal strength), the 6th signal of communication (the 6th sends signal and the 6th Received signal strength), the 7th signal of communication (the 7th sends signal and the 7th Received signal strength), the 8th signal of communication (the 8th sends signal and the 8th Received signal strength) is received and dispatched.In addition, only the difference with the high-frequency model 10 shown in execution mode 1 is described below.
First, the circuit structure of high-frequency model 10B is described.The switch element 20B of high-frequency model 10B comprises independent terminals P
iC(RF1)-P
iC(RF4), in addition also independent terminals P is comprised
iC(RF5), P
iC(RF6), P
iC(RF7), P
iC(RF8), P
iC(RF9), P
iC(RF10).
Independent terminals P
iC(RF5) be connected with the low pass filter 71 of LC Filter Type.Low pass filter 71 sends signal and the 6th to send the baseband of signal as passband and using the filter of the frequency band of higher harmonic components as attenuation band using the 5th.Low pass filter 71 sends signal input terminal P with the 5th of high-frequency model 10B
m(Tx56) be connected.Send signal input terminal input the 5th to the 5th and send signal or the 6th transmission signal.
Independent terminals P
iC(RF6) be connected with the low pass filter 72 of LC Filter Type.Low pass filter 72 sends signal and the 8th to send the baseband of signal as passband and using the filter of the frequency band of higher harmonic components as attenuation band using the 7th.Low pass filter 72 sends signal input terminal P with the 6th of high-frequency model 10B
m(Tx78) be connected.Send signal input terminal input the 7th to the 6th and send signal or the 8th transmission signal.
Independent terminals P
iC(RF7) be connected with receiver side SAW filter 35Rx via receiver side match circuit 45Rx.Receiver side SAW filter 35Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 5th Received signal strength.The 5th Received signal strength lead-out terminal P of receiver side SAW filter 35Rx and high-frequency model 10B
m(Rx5) be connected.The 5th Received signal strength is exported from the 5th Received signal strength lead-out terminal.
Independent terminals P
iC(RF8) be connected with receiver side SAW filter 36Rx via receiver side match circuit 46Rx.Receiver side SAW filter 36Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 6th Received signal strength.Receiver side SAW filter 36Rx is connected with the 6th Received signal strength lead-out terminal PM (Rx6) of high-frequency model 10B.The 6th Received signal strength is exported from the 6th Received signal strength lead-out terminal.
Receiver side SAW filter 35Rx and receiver side SAW filter 36Rx is formed as one, forms compound SAW filter 356Rx by this shape.This compound SAW filter 356Rx such as realizes by the electrode of the electrode and receiver side SAW filter 36Rx that form receiver side SAW filter 35Rx on the piezoelectric substrate of monomer.
Independent terminals P
iC(RF9) be connected with receiver side SAW filter 37Rx via receiver side match circuit 47Rx.Receiver side SAW filter 37Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 7th Received signal strength.The 7th Received signal strength lead-out terminal P of receiver side SAW filter 37Rx and high-frequency model 10B
m(Rx7) be connected.The 7th Received signal strength is exported from the 7th Received signal strength lead-out terminal.
Independent terminals P
iC(RF10) be connected with receiver side SAW filter 38Rx via receiver side match circuit 48Rx.Receiver side SAW filter 38Rx is as passband and using the filter of other frequency band as attenuation band using the baseband of the 8th Received signal strength.The 8th Received signal strength lead-out terminal P of receiver side SAW filter 38Rx and high-frequency model 10B
m(Rx8) be connected.The 8th Received signal strength is exported from the 8th Received signal strength lead-out terminal.
Receiver side SAW filter 37Rx and receiver side SAW filter 38Rx is formed as one, forms compound SAW filter 378Rx by this shape.This compound SAW filter 378Rx such as realizes by the electrode of the electrode and receiver side SAW filter 38Rx that form receiver side SAW filter 37Rx on the piezoelectric substrate of monomer.
The high-frequency model 10B be made up of such circuit structure is achieved by the structure shown in Fig. 7 A, Fig. 7 B, Fig. 7 C.Fig. 7 A is the vertical view of the high-frequency model 10B involved by execution mode 3, and Fig. 7 B is the construction profile of the transmitting filter module 30Tx side of high-frequency model 10B, and Fig. 7 C is the construction profile of the receiving filter module 30BRx side of high-frequency model 10B.
In addition, in Fig. 7 A, Fig. 7 B, Fig. 7 C, electrode pattern concrete in not shown transmitter side basal substrate 40Tx, receiver side basal substrate 40BRx, mother substrate 90.But the low pass filter 71,72 of LC Filter Type can be utilized known method and is achieved by the internal layer electrode pattern of mother substrate 90.
Receiver side SAW filter 31Rx, 32Rx, 33Rx, 34Rx and compound SAW filter 356Rx, 378Rx are arranged on the surface of receiver side basal substrate 40BRx by solder or conductive adhesive etc.Such as, when Fig. 7 A, Fig. 7 C, be arranged in the mode of row to install receiver side SAW filter 31Rx, 32Rx, 33Rx, 34Rx and compound SAW filter 356Rx, 378Rx to separate predetermined distance.
In receiver side basal substrate 40BRx, be formed with the electrode pattern of match circuit 41Rx-44Rx, be also formed with the electrode pattern of match circuit 45Rx-48Rx.Under the electrode pattern of match circuit 45Rx, 46Rx being formed in the installation region of compound SAW filter 356Rx.Under the electrode pattern of match circuit 47Rx, 48Rx being formed in the installation region of compound SAW filter 378Rx.
Even such structure, owing to transmitter side bank of filters and receiver side bank of filters being configured separatedly, therefore, the isolation between transmitter side filter and receiver side filter also can be guaranteed.
In addition, as shown in present embodiment and execution mode 1, by concentrating transmitter side SAW filter and receiver side SAW filter respectively, be effective when being formed and using the high-frequency model of the transmitter side SAW filter of different materials and receiver side SAW filter according to specification.
Specifically, LiTaO is being utilized
3(lithium tantalate) substrate forms each transmitter side SAW filter, utilizes LiNbO
3when (lithium niobate) substrate forms each receiver side SAW filter, if existing structure, then the transmitter side SAW filter and the receiver side SAW filter that form each SAW duplexer after independent formation, then must form as one.But, as the structure of the application, to the transmitter side SAW filter be made up of identical baseplate material each other or receiver side SAW filter concentrate each other, compound SAW filter 356Rx, the 378Rx of the high-frequency model 10B thus as shown in above-mentioned execution mode 3, multiple SAW filter can be formed on a piezoelectric substrate.Thus, the group of multiple transmitter side SAW filter and receiver side filter can be formed with more simple manufacturing process small-sizedly.
In addition, in the high-frequency model 10B involved by execution mode 3, show situation about multiple receiver side SAW filter being formed as one, but also multiple transmitter side SAW filter can be formed as one.
In addition, for the high-frequency model 10B involved by execution mode 3, also can the structure of high-frequency model 10A involved by application implementation mode 2.
Next, with reference to accompanying drawing, the high-frequency model involved by execution mode 4 is described.Fig. 8 is the construction profile of the transmitting filter module 30Tx of high-frequency model 10C involved by execution mode 4.Relative to the high-frequency model 10 shown in execution mode 1, the high-frequency model 10C of present embodiment is by being arranged on transmitting filter module 30Tx, receiving filter module 30BRx, switch element 20 and being different from the module basal substrate 90C of mother substrate, thus realize high-frequency model.In addition, the circuit structure of the high-frequency model 10C of present embodiment is identical with the circuit structure shown in Fig. 6, omits the description.In addition, the structure of transmitting filter module 30Tx, receiving filter module 30BRx is also identical with the structure shown in execution mode 3, omits the description.In addition, Fig. 8 also omit conductive vias, conductive vias is suitably formed in module basal substrate 90C, to realize the circuit structure shown in Fig. 6.
Module basal substrate 90C (being equivalent to the 3rd substrate of the present invention) is by being laminated multilayer (in Fig. 8 being 8 layers) dielectric layer 901,902,903,904,905,906,907,908.
On the surface (surface of dielectric layer 901) of module with basal substrate 90C, transmitting filter module 30Tx, receiving filter module 30BRx, switch element 20 are installed.
On interface between dielectric layer 901 and 902, be formed with the electrode pattern DP connecting transmitting filter module 30Tx, receiving filter module 30BRx, switch element 20 with the pattern specified
23C.
On roughly whole of interface between dielectric layer 902 and 903, be formed with internal layer grounding electrode DP
g1C.
On roughly whole of interface between dielectric layer 907 and 908, be formed with internal layer grounding electrode DP
g2C.
Be formed to dielectric layer 907 from dielectric layer 903: the electrode pattern DP forming low pass filter 71
71; Form the electrode pattern DP of low pass filter 72
72; And form the electrode pattern DP of match circuit 50
50C.When observing from stacked direction, the electrode pattern DP of low pass filter 71 will be formed
71with the electrode pattern DP forming low pass filter 72
72be formed as its electrode forming region not overlap.
In addition, when observing from stacked direction, the electrode pattern DP of match circuit 50 will be formed
50Cbe formed as and electrode pattern DP
71, DP
72electrode forming region do not overlap.In dielectric layer 903-907, electrode pattern DP
71, DP
72forming region and electrode pattern DP
50Cbetween, be formed and internal layer grounding electrode DP
g1C, DP
g2Cthe conductive vias TH be connected
gC.
At the back side (back side of dielectric layer 908) of module with basal substrate 90C, be formed with the external connection terminals for being installed on not shown mother substrate.
By having such structure, as long as this high-frequency model 10C is installed on not shown mother substrate, and being connected with antenna ANT, just can directly realizing the circuit shown in Fig. 6.Therefore, become easy relative to the design of the high-frequency model 10C of mother substrate, and the design freedom of other circuit can also be improved.
In addition, in the structure of present embodiment, low pass filter group and the antenna side match circuit of transmitter side SAW filter group, transmitter side match circuit group, receiver side bank of filters, receiver side match circuit group, LC Filter Type are separated respectively for physically, or undertaken electrically separated by ground connection, therefore, the isolation between them can be guaranteed.
In addition, in the present embodiment, transmitting filter module 30Tx and switch element 20 are not formed as one, but also can form as one as shown in Embodiment 2.
Next, with reference to accompanying drawing, the high-frequency model involved by execution mode 5 is described.Fig. 9 is the vertical view of the high-frequency model 10D involved by execution mode 5.The difference of the high-frequency model 10D of present embodiment and the high-frequency model 10C shown in execution mode 4 is, the installation site of switch element 20.Therefore, only different parts is described.
On the surface of module with basal substrate 90D, in the mode separating predetermined distance, transmitting filter module 30Tx and receiving filter module 30BRx is installed.Switch element 20 is arranged between the installation site of transmitting filter module 30Tx and the installation site of receiving filter module 30BRx.
By having such structure, the interval between transmitting filter module 30Tx and receiving filter module 30BRx can be expanded further, sandwiched switch element 20 between which, therefore, can improve the isolation between transmitting filter module 30Tx and receiving filter module 30BRx further.
Next, with reference to accompanying drawing, the high-frequency model involved by execution mode 6 is described.Figure 10 is the vertical view of the high-frequency model 10E involved by execution mode 6.The difference of the high-frequency model 10E of present embodiment and the high-frequency model 10C shown in execution mode 4 is, is provided with other multiple circuit components 80 between transmitting filter module 30Tx and receiving filter module 30BRx.Therefore, only different parts is described.
On the surface of module with basal substrate 90E, in the mode separating predetermined distance, transmitting filter module 30Tx and receiving filter module 30BRx is installed.Multiple circuit components 80 is arranged between the installation site of transmitting filter module 30Tx and the installation site of receiving filter module 30BRx.These circuit components both can be realized by the mount type element formed in the inductor of high-frequency model 10E and capacitor, also can be mounted in the mount type element of other circuit module on mother substrate.
Even such structure, also in the same manner as the high-frequency model 10D shown in execution mode 5, the interval between transmitting filter module 30Tx and receiving filter module 30BRx can be expanded further, sandwiched switch element 80 between which, therefore, the isolation between transmitting filter module 30Tx and receiving filter module 30BRx can be improved further.
In addition, in execution mode 5,6, show situation about transmitting filter module, receiving filter module, switch element to be arranged on module basal substrate, but also can be applied to form transmitting filter module, receiving filter module, switch element be arranged on mother substrate.
Label declaration
10,10A, 10B, 10C, 10D, 10E, 10P: high-frequency model
20: switch element
31DPX, 32DPX, 33DPX, 34DPX:SAW duplexer
30Tx: transmitting filter module
30Rx, 30BRx: receiving filter module
31Tx, 32Tx, 33Tx, 34Tx: transmitter side SAW filter
31Rx, 32Rx, 33Rx, 34Rx, 35Rx, 36Rx, 37Rx, 38Rx: receiver side SAW filter
356Rx, 378Rx: compound SAW filter
40Tx, 40ATx: transmitter side basal substrate
40Rx, 40BRx: receiver side basal substrate
41P, 42P, 43P, 44P, 50P: match circuit
41Tx, 42Tx, 43Tx, 44Tx: transmitter side match circuit
41Rx, 42Rx, 43Rx, 44Rx, 45Rx, 46Rx, 47Rx, 48Rx: receiver side match circuit
60: insulating properties protective material
71,72: low pass filter
90: mother substrate
90C, 90D, 90E: module basal substrate
401t-407t, 401r-406r, 901-908: dielectric layer
Claims (13)
1. a high-frequency model, this high-frequency model comprises:
The group of multiple transmitting filter and receiving filter, the group of the plurality of transmitting filter and receiving filter is arranged for each signal of communication; And
Switch element, this switch element switches the common terminal of the group of transmitting filter and receiving filter, and is connected with antenna,
It is characterized in that, also comprise:
1st substrate, the 1st substrate is mounted with the transmitting filter respectively organized in the group of multiple described transmitting filter and receiving filter; And
2nd substrate, the 2nd substrate is mounted with the receiving filter respectively organized in the group of multiple described transmitting filter and receiving filter.
2. high-frequency model as claimed in claim 1, is characterized in that,
Described 1st substrate is formed the electrode pattern of transmitter side match circuit, and the electrode pattern of this transmitter side match circuit is connected to each transmitting filter and between the described common terminal be connected with this transmitting filter,
Described 2nd substrate is formed the electrode pattern of receiver side match circuit, and the electrode pattern of this receiver side match circuit is connected to each receiving filter and between the described common terminal be connected with this receiving filter.
3. high-frequency model as claimed in claim 1, is characterized in that,
Described 1st substrate is provided with described switch element, and is formed with the electrode pattern to the antenna side match circuit mated between described switch element with described antenna.
4. high-frequency model as claimed in claim 2, is characterized in that,
Described 1st substrate is provided with described switch element, and is formed with the electrode pattern to the antenna side match circuit mated between described switch element with described antenna.
5. high-frequency model as claimed in claim 3, is characterized in that,
On described 1st substrate, between the electrode pattern and the electrode pattern of described antenna side match circuit of described transmitter side match circuit, be formed with earthing conductor.
6. high-frequency model as claimed in claim 4, is characterized in that,
On described 1st substrate, between the electrode pattern and the electrode pattern of described antenna side match circuit of described transmitter side match circuit, be formed with earthing conductor.
7. the high-frequency model as described in any one of claim 1 to 6, is characterized in that,
Comprise compound transmitting filter, transmitting filter close for passband in multiple described transmitting filter forms as one by this compound transmitting filter,
This compound transmitting filter is arranged on described 1st substrate.
8. the high-frequency model as described in any one of claim 1 to 6, is characterized in that,
Comprise compound receiving filter, receiving filter close for passband in multiple described receiving filter forms as one by this compound receiving filter,
This compound receiving filter is arranged on described 2nd substrate.
9. the high-frequency model as described in any one of claim 1 to 6, is characterized in that,
Comprise the 3rd substrate being provided with described 1st substrate and described 2nd substrate.
10. high-frequency model as claimed in claim 9, is characterized in that,
On described 3rd substrate, between the installation site of described 1st substrate and the installation site of described 2nd substrate, other circuit components is installed.
11. as claim 1 to 6 or 10 any one as described in high-frequency model, it is characterized in that,
Described transmitting filter and described receiving filter are acoustic wave filters.
12. 1 kinds of transmitting filter modules, this transmitting filter module is used in the high-frequency model of the group comprising multiple transmitting filter and receiving filter, the group of the plurality of transmitting filter and receiving filter is arranged for each signal of communication, it is characterized in that
The transmitting filter respectively organized in the group of multiple described transmitting filter and receiving filter is loaded on the 1st substrate.
13. 1 kinds of receiving filter modules, this receiving filter module is used in the high-frequency model of the group comprising multiple transmitting filter and receiving filter, the group of the plurality of transmitting filter and receiving filter is arranged for each signal of communication, it is characterized in that
The receiving filter respectively organized in the group of multiple described transmitting filter and receiving filter is loaded on the 2nd substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-208334 | 2011-09-26 | ||
| JP2011208334 | 2011-09-26 | ||
| PCT/JP2012/074194 WO2013047357A1 (en) | 2011-09-26 | 2012-09-21 | High frequency module, transmission filter module, and reception filter module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204190762U true CN204190762U (en) | 2015-03-04 |
Family
ID=47995389
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201290000837.0U Expired - Lifetime CN204190762U (en) | 2011-09-26 | 2012-09-21 | High-frequency model, transmitting filter module, receiving filter module |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5790770B2 (en) |
| CN (1) | CN204190762U (en) |
| WO (1) | WO2013047357A1 (en) |
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| JP6282410B2 (en) * | 2013-06-10 | 2018-02-21 | 太陽誘電株式会社 | module |
| JP6414559B2 (en) | 2016-02-22 | 2018-10-31 | 株式会社村田製作所 | Diplexer module with switch and diplexer module |
| WO2019003791A1 (en) | 2017-06-27 | 2019-01-03 | 株式会社村田製作所 | Communication module |
| CN111869112B (en) | 2018-03-15 | 2022-05-17 | 株式会社村田制作所 | Front-end circuit, front-end module, communication device, and multiplexer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH1155155A (en) * | 1997-08-07 | 1999-02-26 | Nec Corp | Antenna interface |
| JP3612031B2 (en) * | 2001-03-29 | 2005-01-19 | Ｔｄｋ株式会社 | High frequency module |
| JP4718352B2 (en) * | 2006-03-20 | 2011-07-06 | 京セラ株式会社 | Surface acoustic wave device and method of manufacturing surface acoustic wave device |
| JP2010010765A (en) * | 2008-06-24 | 2010-01-14 | Hitachi Media Electoronics Co Ltd | Electronic circuit module for mobile communication terminal, and circuit for mobile communication terminal equipped with the same |
| JP5340756B2 (en) * | 2009-01-30 | 2013-11-13 | 太陽誘電株式会社 | Electronic component and manufacturing method thereof |
| JP5262840B2 (en) * | 2009-03-03 | 2013-08-14 | 株式会社村田製作所 | High frequency module |
| JP5071465B2 (en) * | 2009-11-11 | 2012-11-14 | 株式会社村田製作所 | High frequency module |
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2012
- 2012-09-21 WO PCT/JP2012/074194 patent/WO2013047357A1/en active Application Filing
- 2012-09-21 CN CN201290000837.0U patent/CN204190762U/en not_active Expired - Lifetime
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| JP5790770B2 (en) | 2015-10-07 |
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