CN204188903U - Liquid crystal indicator and device substrate thereof - Google Patents

Liquid crystal indicator and device substrate thereof Download PDF

Info

Publication number
CN204188903U
CN204188903U CN201420396503.0U CN201420396503U CN204188903U CN 204188903 U CN204188903 U CN 204188903U CN 201420396503 U CN201420396503 U CN 201420396503U CN 204188903 U CN204188903 U CN 204188903U
Authority
CN
China
Prior art keywords
metal level
liquid crystal
device substrate
width
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201420396503.0U
Other languages
Chinese (zh)
Inventor
钟岳庭
陈俊宇
许绍武
卢永信
王兆祥
邱冠宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innolux Corp
Original Assignee
Innolux Display Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolux Display Corp filed Critical Innolux Display Corp
Priority to CN201420396503.0U priority Critical patent/CN204188903U/en
Application granted granted Critical
Publication of CN204188903U publication Critical patent/CN204188903U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The utility model discloses a kind of liquid crystal indicator and device substrate thereof.This device substrate comprises a substrate, a metal level and a flatness layer.Metal level is positioned on this substrate, and wherein this metal level has one first edge along a first direction.Flatness layer is positioned on this metal level, wherein this flatness layer has a contact hole, this contact hole has continuous wall and a bottom surface, this bottom surface exposes this metal level, the outline line of continuous wall on a vertical cross-section is curve, this first edge is to should a critical point of outline line in a vertical direction, and the tangent slope of this outline line in this critical point is less than 0.176.

Description

Liquid crystal indicator and device substrate thereof
Technical field
The utility model relates to a kind of liquid crystal indicator, particularly relates to a kind of liquid crystal indicator with contact hole.
Background technology
Among liquid crystal indicator, contact hole is usually used in switch on pixel electrode and source electrode.But, with reference to Fig. 1, liquid crystal molecule 2 can arrange along with the profile of contact hole 1, and the section shape designed due to contact hole 1 is often arcuate structure wide at the top and narrow at the bottom, therefore along with the liquid crystal molecule 2 of contact hole 1 profile arrangement easily causes light leakage phenomena, and the contrast of liquid crystal indicator is reduced.
With reference to Fig. 1, in the prior art, by increasing the area of the source electrode 3 bottom contact hole 1, the liquid crystal molecule 2 had problems can be covered, thus promote the contrast of liquid crystal indicator.But this mode can reduce the aperture opening ratio of liquid crystal indicator, thus the brightness of loss liquid crystal indicator.Therefore the area of an increase source electrode 3 of hiding, and the issue-resolution of non-good.
Utility model content
The purpose of this utility model is to provide a kind of liquid crystal indicator and device substrate thereof, to solve the problem of prior art.
For reaching above-mentioned purpose, a kind of device substrate that the utility model provides, comprises a substrate, a metal level and a flatness layer.Metal level is positioned on this substrate, and wherein this metal level has one first width along a first direction.Flatness layer is positioned on this metal level, and wherein this flatness layer has a contact hole, and this contact hole has continuous wall and a bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has one second width along this first direction.Wherein, this first width and the second width need meet following formula:
2 * { L 2 2 + 0.95 h ln ( 0.05 ) · tan ( 1.5 θ ) · ln [ - 0.1672 ln ( 0.05 ) · tan ( 1.5 θ ) ] } - 1.8 ≤ L 1 ≤ 2 * { L 2 2 + 0.95 h ln ( 0.05 ) · tan ( 1.5 θ ) · ln [ - 0.1672 ln ( 0.05 ) · tan ( 1.5 θ ) ] } + 1.8
Wherein, L 1for this (second) metal level is along this first width of this first direction, L 2for the bottom surface of this contact hole is along this second width of this first direction, h is the thickness of this flatness layer, θ is the angle of an extended surface of a straight line between a preset reference point of continuous wall and a basic point and this bottom surface, wherein, this preset reference point is positioned on this continuous wall, and the vertical range of this preset reference point and this bottom surface is 0.95h, this basic point is the position, boundary of this continuous wall and this bottom surface, p is adjustable parameters, (1-p) h is the height of this preset reference point in this vertical direction, 0<p≤0.1.
This adjustable parameters p is 0.05.
This angle theta is between 20 ~ 40 degree.
This angle theta is between 25 ~ 35 degree.
This device substrate also comprises, and a conductive layer is positioned on this flatness layer, and is electrically connected with this metal level by this contact hole.
This metal level is source electrode or the drain electrode of a driving element.
This metal level is signal wire or the sweep trace of a driving element.
This conductive layer is a transparent material.
This device substrate also comprises, and semi-conductor layer is between this metal level and this substrate.
The material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.
This conductive layer is a metal material.
A kind of liquid crystal indicator, it is characterized in that, this liquid crystal indicator comprises: subtend substrate; Device substrate, relative to this subtend substrate; Liquid crystal layer, is positioned between this subtend substrate and a device substrate; Wherein, this device substrate comprises: metal level, is positioned on this substrate, and is positioned among a pixel region, and wherein this metal level has one first width along a first direction; And flatness layer, be positioned on this metal level, wherein this flatness layer has a contact hole, this contact hole has continuous wall and a bottom surface, this bottom surface exposes this metal level, wherein this bottom surface has one second width along this first direction, and wherein, this first width and the second width need meet following formula:
2 * { L 2 2 + ( 1 - p ) h ln ( p ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.176 * ( 1 - p ) ln ( p ) &CenterDot; tan ( 1.5 &theta; ) ] } - 1.8 &le; L 1 &le; 2 * { L 2 2 + ( 1 - p ) h ln ( p ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.176 * ( 1 - p ) ln ( p ) &CenterDot; tan ( 1.5 &theta; ) ] } + 1.8
Wherein, L 1for metal level is along this first width of this first direction, L 2for the bottom surface of this contact hole is along this second width of this first direction, h is the thickness of this flatness layer, θ is the angle of a straight line between a preset reference point of continuous wall and a basic point and surface level, wherein, this preset reference point is the position of this bottom surface of distance 0.95h on this continuous wall, and this basic point is the position, boundary of this continuous wall and this bottom surface, and p is adjustable parameters, (1-p) h is the height of this preset reference o'clock in a vertical direction, 0<p≤0.1.
This adjustable parameters p is 0.05.
This angle theta is between 20 ~ 40 degree.
This angle theta is between 25 ~ 35 degree.
This liquid crystal indicator also comprises, and a conductive layer is positioned on this flatness layer, and is electrically connected with this metal level by this contact hole.
This liquid crystal indicator also comprises, and semi-conductor layer is between this metal level and this substrate.
The material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.
The utility model also provides a kind of device substrate, comprises a substrate, a metal level and a flatness layer.Metal level is positioned on this substrate, and wherein this metal level has one first edge along a first direction.Flatness layer is positioned on this metal level, wherein this flatness layer has a contact hole, this contact hole has continuous wall and a bottom surface, this bottom surface exposes this metal level, the outline line of continuous wall on a vertical cross-section is curve, this first edge is to should a critical point of outline line in a vertical direction, and the tangent slope of this outline line in this critical point is less than 0.176.Wherein, this metal level has one first width along a first direction, and wherein this bottom surface has one second width along this first direction, and wherein, this first width and the second width need meet following formula:
2 * { L 2 2 + ( 1 - p ) h ln ( p ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.176 * ( 1 - p ) ln ( p ) &CenterDot; tan ( 1.5 &theta; ) ] } = L 1
Wherein, L 1for this second metal level is along this first width of this first direction, L 2for the bottom surface of this contact hole is along this second width of this first direction, θ is the angle of a straight line between a preset reference point of continuous wall and a basic point and surface level, wherein, this preset reference point is this basal surface position of distance on this continuous wall, (1-p) h is the height of this critical point in this vertical direction, 0<p≤0.1.
The utility model has the advantage of, apply embodiment of the present utility model, the aperture opening ratio of liquid crystal indicator and transmittance (contrast under dark-state) can reach optimized state, avoid the generation of the problem such as light leak and contrast reduction.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the device substrate of available liquid crystal display device;
Fig. 2 is the schematic diagram of the device substrate of the utility model one embodiment;
Fig. 3 A is the schematic diagram that the device substrate of the utility model embodiment is applied to a liquid crystal indicator;
Fig. 3 B is the schematic diagram of the 3B thin portion element partly in Fig. 3 A;
Fig. 4 is the schematic diagram of the device substrate of the utility model one variation;
Fig. 5 is the schematic diagram of the liquid crystal indicator of application the utility model embodiment;
Fig. 6 is preset value according to contact hole of the present utility model and actual value deck watch.
Symbol description
1 ~ contact hole
2 ~ liquid crystal molecule
3 ~ source electrode
100 ~ device substrate
110 ~ substrate
120 ~ metal level
121 ~ the first edges
130 ~ flatness layer
131,131 ', 131 " ~ contact hole
132 ~ wall continuously
133 ~ bottom surface
134 ~ preset reference point
135 ~ basic point
136 ~ critical point
137 ~ semiconductor layer
140 ~ conductive layer
150 ~ liquid crystal layer
200 ~ liquid crystal indicator
201 ~ sweep trace
202 ~ signal wire
203 ~ semiconductor layer
204 ~ drain electrode
205 ~ common electrode
210 ~ pixel electrode
222 ~ gate insulation layer
231 ~ contact hole
The bottom surface of 233 ~ contact hole
240 ~ source electrode
250 ~ liquid crystal layer
260 ~ subtend substrate
L 1~ the first width
L 2~ the second width
H ~ thickness
θ ~ angle
β ~ angle
A ~ viewing area
B ~ non-display area
L ~ straight line
L ' ~ tangent line
Embodiment
With reference to Fig. 2, the device substrate 100 of its display the utility model one embodiment, comprises substrate 110, metal level 120 and a flatness layer 130.Metal level 120 is positioned on this substrate 110, and wherein this metal level 120 has one first width L along a first direction X 1.Flatness layer 130 is positioned on this metal level 120, wherein this flatness layer 130 has a contact hole 131, this contact hole 131 has continuous wall 132 and a bottom surface 133, and this bottom surface 133 exposes this metal level 120, and wherein this bottom surface 133 has one second width L along this first direction X 2.
Applicant finds, liquid crystal molecule arranges along continuous wall 132, and penetrance (contrast under dark-state) changes with the slope gradual change of continuous wall 132.When the tangent slope of continuous wall 132 approximates tan10 °, can not there is serious light leak condition in liquid crystal molecule herein, therefore can not reduce the contrast of liquid crystal indicator.With regard to the angle in design, covering of metal level 120 pairs of contact holes 131, only need to reach the position in critical point 136, the tangent slope being equivalent to continuous wall 132 approximates the position of tan10 °, the aperture opening ratio of liquid crystal indicator and transmittance (contrast under dark-state) namely reach optimized state, to accord with the demands of the market.
Refer again to Fig. 2, applicant is learnt by the derivation of curve equation, and when this first width and the second width need meet following formula, the aperture opening ratio of liquid crystal indicator and transmittance can reach optimized state:
2 * { L 2 2 + 0.95 h ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.1672 ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) ] } - 1.8 &le; L 1 &le; 2 * { L 2 2 + 0.95 h ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.1672 ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) ] } + 1.8
Wherein, L 1for this metal level 120 is along this first width of this first direction X, L 2for the bottom surface of this contact hole 131 is along this second width of this first direction X, h is the thickness of this flatness layer 130, θ is the angle of an extended surface of a straight line L between a preset reference point 134 of continuous wall 132 and a basic point 135 and this bottom surface, wherein, this preset reference point 134 is positioned on this continuous wall 132, and this preset reference point 134 is 0.95h with the vertical range of this bottom surface, this basic point 135 is the position, boundary of this continuous wall 132 and this bottom surface 133.Wherein, ± 1.8 is tolerance allowable value in manufacture craft.According to the adjustment of above-mentioned each parameter, curvature and the shape of continuous wall 132 can moderate change.
With reference to Fig. 2, the derivation of curve equation is as follows:
The first step, curve equation matching (hypothesis), supposes that this contact hole meets following formula from the inclined-plane equation of continuous wall
y=f(x)=-A’exp(-x).....(1)
By in equation (1), be only define the asymptote of this contact hole from continuous wall, therefore equation (1) need correct x and y
Second step, curve equation matching (correcting by preset reference point 134, basic point 135 and angle θ), the preset reference point 134 supposing on slope be the p of the degree of depth total depth h at distance flatness layer top doubly, and meet f (R ') relational expression, wherein, this preset reference point 134 is R ' apart from the horizontal range of basic point 135, then
f ( R &prime; ) = - ph = - hexp ( - R &prime; &alpha; ) &DoubleRightArrow; &alpha; = - R &prime; ln ( p ) . . . . . ( 1 ) ; p > 0 , h > 0 , R &prime; > 0 . . . ( 2 )
Obtain correction parameter α
3rd step, the line shape L in line of preset reference point 134 and basic point 135, this straight line L be θ relative to horizontal angle
tan &theta; = ( 1 - p ) h R &prime; &DoubleRightArrow; R &prime; = ( 1 - p ) h tan &theta; . . . ( 3 )
Introduce material characteristics θ
4th step, apart from 0.05 times of the degree of depth total depth h at flatness layer top, formula (2) and formula (3) simultaneous can obtain
&alpha; = - R &prime; ln ( 0.05 ) = - 0.95 h ln ( 0.05 ) &CenterDot; tan &theta; . . . . . ( 4 )
Obtain correction parameter α
5th step, because of determine tangent line L ' that the angle of flatness layer 130 curve should be basic point 135 with relative to horizontal angle β, and rough 1.5 θ that equal of angle β, therefore need to correct (to angularity correction) to curve equation again, then can obtain
f ( R &prime; ) = - h &CenterDot; exp { - R &prime; / &alpha; } = - h &CenterDot; exp { R &prime; &CenterDot; ln ( 0.05 ) &CenterDot; tan &beta; 0.95 h } = - h &CenterDot; exp { R &prime; &CenterDot; ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) 0.95 h . . . . . ( 5 )
Contact hole fitting equation
6th step, wherein R=R 0+ R ', and take back full scale equation Shi Ke get
∵ R'=R-R 0.... (translation)
&DoubleRightArrow; f ( R &prime; ) = - h &CenterDot; exp { - ( R - R 0 ) / &alpha; } = - h &CenterDot; exp { ( R - R 0 ) &CenterDot; ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) 0.95 h } . . . . . ( 6 )
Contact hole actual curve equation
7th step, push away metal level 120 along the half of this second width of this first direction
Because having error in the process of manufacture craft, and ± 1.8 is tolerance allowable value in manufacture craft, and the whole above-mentioned formula that therefore converges can obtain the aperture opening ratio of liquid crystal indicator and transmittance can reach optimized state equation:
2 * { L 2 2 + 0.95 h ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.1672 ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) ] } - 1.8 &le; L 1 &le; 2 * { L 2 2 + 0.95 h ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.1672 ln ( 0.05 ) &CenterDot; tan ( 1.5 &theta; ) ] } + 1.8
In one embodiment, this angle theta is between 20 ~ 40 degree, and such as, this angle theta is between 25 ~ 35 degree.
With reference to Fig. 2, device substrate 100 also comprises a conductive layer 140 and is positioned on this flatness layer 130, and is electrically connected with this metal level 120 by this contact hole 131.This conductive layer 140 can be transparent conductive material or metal material.
This metal level 120 can be source electrode or the drain electrode of a driving element.In one embodiment, device substrate 100 also comprises semi-conductor layer 137 between this metal level 120 and this substrate 110.The material of this semiconductor layer 137 can be polycrystalline silicon material, amorphous silicon material or metal oxide materials.
With reference to Fig. 3 A, the device substrate of the utility model embodiment is applied to a liquid crystal indicator 200, and it comprises a viewing area (pixel region) A and non-display area B.With reference to Fig. 3 B, the thin portion element of the 3B part in its display Fig. 3 A, liquid crystal indicator 200 also comprises sweep trace 201, signal wire 202, semiconductor layer 203, source electrode 240, contact hole 231, the bottom surface 233 of contact hole, drain electrode 204, common electrode 205 and pixel electrode 210 etc. element in the A of viewing area.In the utility model embodiment, this metal level 120 comprises source electrode 240, drain electrode 204, sweep trace 201 and signal wire 202.
Refer again to Fig. 2, in another embodiment, this metal level 120 has one first edge 121 along first direction X, the outline line of continuous wall 132 on a vertical cross-section is curve, this first edge 121 is to should the critical point 136 of outline line in a vertical direction, and the tangent slope of this outline line in this critical point 136 is less than 0.176 (tan10 °).Similar in appearance to previous embodiment, one basic point 135 is positioned at this continuous wall 132 and the boundary position of this bottom surface 133 on this vertical cross-section, this basic point 135 is positioned on a straight line L with this preset reference point 134, θ is the angle of this straight line L and a surface level, wherein this angle theta is between 20 ~ 40 degree, such as, this angle theta is between 25 ~ 35 degree.This metal level 120 has one first width L along first direction X 1, wherein this bottom surface 133 has the second width L along this first direction X 2, wherein, this first width L 1with the second width L 2following formula need be met:
2 * { L 2 2 + ( 1 - p ) h ln ( p ) &CenterDot; tan ( 1.5 &theta; ) &CenterDot; ln [ - 0.176 * ( 1 - p ) ln ( p ) &CenterDot; tan ( 1.5 &theta; ) ] } = L 1
Wherein, L 1for this second metal level is along this first width of this first direction, L 2for the bottom surface of this contact hole is along this second width of this first direction, p is adjustable parameters, θ is the angle of a straight line between a preset reference point of continuous wall and a basic point and surface level, wherein, this preset reference point is this basal surface position of distance on this continuous wall, and (1-p) h is the height of this preset reference point in this vertical direction, 0<p≤0.1, such as, 0<p≤0.05.According to the adjustment of above-mentioned each parameter, curvature and the shape of continuous wall 132 can moderate change.
Although in the above-described embodiments, contact hole is positioned among viewing area (pixel region) A, but above-mentioned disclosing does not limit the utility model.Contact hole structure of the present utility model also can be used among non-display area B.Such as, with reference to Fig. 4, in one embodiment, conductive layer 140 in contact hole 131 ' of the present utility model can connection signal line 202, and above-mentioned formula between the width of the profile of contact hole 131 ' and signal wire 202, can be met, and by flatness layer 130 and the contact hole 131 on gate insulation layer 222 " be connected sweep trace 201, wherein contact hole 131 " profile and the width of sweep trace 201 between can meet above-mentioned formula.In the above-described embodiments, gate insulation layer 222 is formed between signal wire 202 and sweep trace 201.
With reference to Fig. 5, the liquid crystal indicator 200 of its display application the utility model embodiment, comprises device substrate 100, liquid crystal layer 250 and subtend substrate 260.
With reference to following deck watch 1 and Fig. 6, from following deck watch and Fig. 6, according to the default metal level of the utility model embodiment (M2) 120 width, in the mill, the technologic error of actual fabrication is had to fall into ± tolerance the permissible range of 1.8.
Deck watch 1
Apply embodiment of the present utility model, the aperture opening ratio of liquid crystal indicator and transmittance (contrast under dark-state) can reach optimized state, avoid the generation of the problem such as light leak and contrast reduction.

Claims (18)

1. a device substrate, is characterized in that, this device substrate comprises:
Substrate;
Metal level, is positioned on this substrate, and wherein this metal level has one first width along a first direction; And
Flatness layer, be positioned on this metal level, wherein this flatness layer has a contact hole, and this contact hole has continuous wall and a bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has one second width along this first direction,
Wherein, this first width and the second width meet following formula:
Wherein, L 1for this metal level is along this first width of this first direction, L 2for the bottom surface of this contact hole is along this second width of this first direction, h is the thickness of this flatness layer, θ is the angle of an extended surface of a straight line between a preset reference point of continuous wall and a basic point and this bottom surface, wherein, this preset reference point is positioned on this continuous wall, and the vertical range of this preset reference point and this bottom surface is 0.95h, this basic point is the position, boundary of this continuous wall and this bottom surface, p is adjustable parameters, (1-p) h is the height of this preset reference point in this vertical direction, 0<p≤0.1.
2. device substrate as claimed in claim 1, it is characterized in that, this adjustable parameters p is 0.05.
3. device substrate as claimed in claim 1, it is characterized in that, this angle theta is between 20 ~ 40 degree.
4. device substrate as claimed in claim 1, it is characterized in that, this angle theta is between 25 ~ 35 degree.
5. device substrate as claimed in claim 1, it is characterized in that, this device substrate also comprises conductive layer, is positioned on this flatness layer, and is electrically connected with this metal level by this contact hole.
6. device substrate as claimed in claim 1, it is characterized in that, this metal level is source electrode or the drain electrode of a driving element.
7. device substrate as claimed in claim 1, it is characterized in that, this metal level is signal wire or the sweep trace of a driving element.
8. device substrate as claimed in claim 5, it is characterized in that, this conductive layer is a transparent material.
9. device substrate as claimed in claim 1, it is characterized in that, this device substrate also comprises semiconductor layer, between this metal level and this substrate.
10. device substrate as claimed in claim 9, it is characterized in that, the material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.
11. device substrates as claimed in claim 5, it is characterized in that, this conductive layer is a metal material.
12. 1 kinds of liquid crystal indicators, is characterized in that, this liquid crystal indicator comprises:
Subtend substrate;
Device substrate, relative to this subtend substrate;
Liquid crystal layer, is positioned between this subtend substrate and a device substrate; Wherein, this device substrate comprises:
Metal level, is positioned on this substrate, and is positioned among a pixel region, and wherein this metal level has one first width along a first direction; And
Flatness layer, be positioned on this metal level, wherein this flatness layer has a contact hole, and this contact hole has continuous wall and bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has one second width along this first direction,
Wherein, this first width and the second width need meet following formula:
Wherein, L 1for this metal level is along this first width of this first direction, L 2for the bottom surface of this contact hole is along this second width of this first direction, h is the thickness of this flatness layer, θ is the angle of a straight line between a preset reference point of continuous wall and a basic point and surface level, wherein, this preset reference point is this basal surface position of distance on this continuous wall, and this basic point is the position, boundary of this continuous wall and this bottom surface, and p is adjustable parameters, (1-p) h is the height of this preset reference o'clock in a vertical direction, 0<p≤0.1.
13. liquid crystal indicators as claimed in claim 12, it is characterized in that, this adjustable parameters p is 0.05.
14. liquid crystal indicators as claimed in claim 12, it is characterized in that, this angle theta is between 20 ~ 40 degree.
15. liquid crystal indicators as claimed in claim 12, it is characterized in that, this angle theta is between 25 ~ 35 degree.
16. liquid crystal indicators as claimed in claim 12, it is characterized in that, this liquid crystal indicator also comprises conductive layer, is positioned on this flatness layer, and is electrically connected with this metal level by this contact hole.
17. liquid crystal indicators as claimed in claim 12, it is characterized in that, this liquid crystal indicator also comprises semiconductor layer, between this metal level and this substrate.
18. liquid crystal indicators as claimed in claim 17, is characterized in that, the material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.
CN201420396503.0U 2014-07-17 2014-07-17 Liquid crystal indicator and device substrate thereof Active CN204188903U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420396503.0U CN204188903U (en) 2014-07-17 2014-07-17 Liquid crystal indicator and device substrate thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420396503.0U CN204188903U (en) 2014-07-17 2014-07-17 Liquid crystal indicator and device substrate thereof

Publications (1)

Publication Number Publication Date
CN204188903U true CN204188903U (en) 2015-03-04

Family

ID=52620884

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420396503.0U Active CN204188903U (en) 2014-07-17 2014-07-17 Liquid crystal indicator and device substrate thereof

Country Status (1)

Country Link
CN (1) CN204188903U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105259678A (en) * 2014-07-17 2016-01-20 群创光电股份有限公司 Liquid crystal display device and element substrate of same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105259678A (en) * 2014-07-17 2016-01-20 群创光电股份有限公司 Liquid crystal display device and element substrate of same
CN105259678B (en) * 2014-07-17 2019-08-06 群创光电股份有限公司 Liquid crystal display device and its device substrate

Similar Documents

Publication Publication Date Title
US9535300B2 (en) Pixel structure and liquid crystal panel
CN102103295A (en) Liquid crystal display device
US20090195489A1 (en) Thin film transistor substrate having high aperture ratio and method of manufacturing same
JP6370003B2 (en) Pixel structure and manufacturing method thereof
US9412767B2 (en) Liquid crystal display device and method of manufacturing a liquid crystal display device
US10684521B2 (en) Display device
US20180197960A1 (en) TFT array substrate, manufacturing method thereof, and liquid crystal display apparatus
CN101847639A (en) Array substrate and manufacturing method thereof
US20170023813A1 (en) Liquid crystal display
CN204188903U (en) Liquid crystal indicator and device substrate thereof
CN104183607A (en) Array substrate, manufacturing method of array substrate and display device with array substrate
WO2017128558A1 (en) Array substrate and method of manufacturing array substrate
CN204116747U (en) Liquid crystal indicator and device substrate thereof
KR102232258B1 (en) Display Substrate and Method for Preparing the Same
US20160334678A1 (en) Display device
CN105259678A (en) Liquid crystal display device and element substrate of same
CN103280197B (en) A kind of array base palte and display floater
US20150070635A1 (en) Liquid crystal display
JP3194536U (en) Liquid crystal display device and element substrate thereof
CN104835827A (en) Display panel
CN209087843U (en) Liquid crystal display Demux structure and liquid crystal display
CN109407430B (en) Array substrate and preparation method thereof
CN105467626B (en) Liquid crystal display device and its device substrate
CN105140231B (en) Thin-film transistor array base-plate and preparation method thereof
US9638967B2 (en) Liquid crystal display

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant