CN204116747U - Liquid crystal indicator and device substrate thereof - Google Patents

Abstract

The utility model discloses a kind of liquid crystal indicator and device substrate thereof, and this device substrate comprises a substrate, a metal level, a flatness layer and one first conductive layer.Metal level is positioned on this substrate.Flatness layer is positioned on this metal level, and wherein this flatness layer has a contact hole, and this contact hole has continuous wall and a bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has one first width.First conductive layer is positioned on this flatness layer, and has a perforate and expose this contact hole, and this perforate has one second width above this contact hole.Wherein, the relation between this first width and second width adjusts through appropriateness, luminance brightness loss to be reduced, avoids the problem such as contact short circuit and memory capacitance deficiency simultaneously.

Description

Liquid crystal indicator and device substrate thereof

Technical field

The utility model relates to a kind of liquid crystal indicator, particularly relates to a kind of liquid crystal indicator with contact hole.

Background technology

Among liquid crystal indicator, contact hole is usually used in switch on pixel electrode and source electrode.But with reference to Figure 1A, liquid crystal molecule 2 can arrange along with the profile of contact hole 1, and the section shape designed due to contact hole 1 is often arcuate structure wide at the top and narrow at the bottom.

With reference to Figure 1B, in the prior art, be provided with bottom metal layer 3 and a pixel conductive layer 4 around contact hole, separate with interlayer insulating film 5 between bottom metal layer 3 and pixel conductive layer 4.When contact hole 1 is too small in the aperture of bottom metal layer 3 position time, easily cause bottom metal layer 3 and pixel conductive layer 4 in electrical contact and short circuit.But, when contact hole 1 is excessive in the aperture of bottom metal layer 3 position time, easily cause the memory capacitance between bottom metal layer 3 and pixel conductive layer 4 not enough, therefore cause product fraction defective too high.

Utility model content

The purpose of this utility model is to provide a kind of liquid crystal indicator and device substrate thereof, to solve the problem of above-mentioned prior art.

For reaching above-mentioned purpose, a kind of device substrate that the utility model provides, comprises a substrate, a metal level, a flatness layer and one first conductive layer.Metal level is positioned on this substrate.Flatness layer is positioned on this metal level, and wherein this flatness layer has a contact hole, and this contact hole has continuous wall and a bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has one first width.First conductive layer is positioned on this flatness layer, and has a perforate and expose this contact hole, and this perforate has one second width above this contact hole.Wherein, this first width and the second width need meet following formula:

$2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\·\ln [\frac{-0.134}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}\≤L_2\≤2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\ln [\frac{-0.00166}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}$

Wherein, L ₁for this first width, L ₂for this second width, h is the thickness of this flatness layer, θ is the angle of an extended surface of a straight line between a preset reference point of continuous wall and a basic point and this bottom surface, wherein, this preset reference point is positioned on this continuous wall, and the vertical range of this preset reference point and this bottom surface is 0.95h, this basic point is the position, boundary of this continuous wall and this bottom surface.

This angle theta is between 20 ~ 40 degree.

This angle theta is between 25 ~ 35 degree.

This device substrate also comprises interbedded insulating layer and one second conductive layer, and this interlayer insulating film is located between this first conductive layer and this second conductive layer at least partly, and this second conductive layer is electrically connected with this metal level by this contact hole.

This metal level is source electrode or the drain electrode of a driving element.

This device substrate also comprises, and semi-conductor layer is between this metal level and this substrate.

The material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.

A kind of liquid crystal indicator, this liquid crystal indicator comprises a subtend substrate; One device substrate, relative to this subtend substrate; One liquid crystal layer, is positioned between this subtend substrate and a device substrate; Wherein, this device substrate comprises: a substrate; One metal level, is positioned on this substrate; One flatness layer, be positioned on this metal level, wherein this flatness layer has a contact hole, and this contact hole has continuous wall and a bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has one first width; One first conductive layer, is positioned on this flatness layer, and has a perforate and expose this contact hole, and this perforate has one second width above this contact hole; Wherein, this first width and the second width need meet following formula:

$2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\·\ln [\frac{-0.134}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}\≤L_2\≤2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\ln [\frac{-0.00166}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}$

Wherein, L ₁for this first width, L ₂for this second width, h is the thickness of this flatness layer, θ is the angle of an extended surface of a straight line between a preset reference point of continuous wall and a basic point and this bottom surface, wherein, this preset reference point is positioned on this continuous wall, and the vertical range of this preset reference point and this bottom surface is 0.95h, this basic point is the position, boundary of this continuous wall and this bottom surface.

This angle theta is between 20 ~ 40 degree.

This angle theta is between 25 ~ 35 degree

This liquid crystal indicator also comprises interbedded insulating layer and one second conductive layer, and this interlayer insulating film is located between this first conductive layer and this second conductive layer at least partly, and this second conductive layer is electrically connected with this metal level by this contact hole.

This metal level is source electrode or the drain electrode of a driving element.

This liquid crystal indicator also comprises, and semi-conductor layer is between this metal level and this substrate.

The material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.

The utility model has the advantage of, the luminance brightness loss of liquid crystal indicator is less than 1%, is acceptable scope, and avoids contact short circuit and memory capacitance deficiency etc. problem between the first conductive layer 140 and this second conductive layer 170.

Accompanying drawing explanation

Figure 1A, Figure 1B are the schematic diagram of the device substrate of available liquid crystal display device;

Fig. 2 A is the schematic diagram of the primary structure of the device substrate of the utility model one embodiment;

Fig. 2 B is the schematic diagram of the complete structure of the device substrate of the utility model one embodiment;

Fig. 3 A is the schematic diagram that the device substrate of the utility model embodiment is applied to a liquid crystal indicator;

Fig. 3 B is the schematic diagram of the 3B thin portion element partly in Fig. 3 A;

Fig. 4 is the schematic diagram of the liquid crystal indicator of application the utility model embodiment.

Symbol description

1 ~ contact hole

2 ~ liquid crystal molecule

3 ~ bottom metal layer

4 ~ pixel conductive layer

5 ~ interlayer insulating film

100 ~ device substrate

110 ~ substrate

120 ~ metal level

130 ~ flatness layer

131 ~ contact hole

132 ~ wall continuously

133 ~ bottom surface

134 ~ preset reference point

135 ~ basic point

137 ~ semiconductor layer

140 ~ the first conductive layers

141 ~ perforate

160 ~ interlayer insulating film

170 ~ the second conductive layers

200 ~ liquid crystal indicator

201 ~ sweep trace

202 ~ signal wire

203 ~ semiconductor layer

204 ~ drain electrode

205 ~ common electrode

210 ~ pixel electrode

231 ~ contact hole

The bottom surface of 233 ~ contact hole

234 ~ common electrode opening

240 ~ source electrode

250 ~ liquid crystal layer

260 ~ subtend substrate

L ₁~ the first width

L ₂~ the second width

H ~ thickness

θ ~ angle

β ~ angle

A ~ viewing area

B ~ non-display area

L ~ straight line

L ' ~ tangent line

Embodiment

With reference to Fig. 2 A, the device substrate 100 of its display the utility model one embodiment, comprises substrate 110, metal level 120, flatness layer 130 and one first conductive layer 140.Metal level 120 is positioned on this substrate 110, flatness layer 130 is positioned on this metal level 120, and wherein this flatness layer 130 has a contact hole 131, and this contact hole 131 has continuous wall 132 and a bottom surface 133, this bottom surface 133 exposes this metal level 120, and wherein this bottom surface 133 has one first width L ₁.First conductive layer 140 is positioned on this flatness layer 130, and has a perforate 141 and expose this contact hole, and this perforate 141 has one second width L above this contact hole ₂.

Refer again to Fig. 2 A, applicant is learnt by the derivation of curve equation, as this first width L ₁with the second width L ₂when meeting following formula, the luminance brightness loss of liquid crystal indicator is less than 1%, is acceptable scope, and avoids contact short circuit and memory capacitance deficiency etc. problem:

$2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\·\ln [\frac{-0.134}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}\≤L_2\≤2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\ln [\frac{-0.00166}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}$

Wherein, L ₁for this first width, L ₂for this second width, h is the thickness of this flatness layer 130, θ is the angle of an extended surface of a straight line between a preset reference point 134 of continuous wall 132 and a basic point 135 and this bottom surface 133, wherein, this preset reference point 134 is positioned on this continuous wall 132, and this preset reference point 134 is 0.95h with the vertical range of this bottom surface 133, this basic point 135 is the position, boundary of this continuous wall 132 and this bottom surface 133.According to the adjustment of above-mentioned each parameter, curvature and the shape of continuous wall 132 can moderate change

With reference to Fig. 2 A, the derivation of curve equation is as follows:

The first step, curve equation matching (hypothesis), supposes that the inclined-plane equation of the continuous wall of this contact hole meets following formula

y＝f(R)＝-A’exp(-R).....(1)

Second step, curve equation matching (to by preset reference point 134, basic point 135 and angularity correction), the preset reference point 134 supposing on slope be the p (p=0.05) of the degree of depth total depth h at distance flatness layer top doubly, then the inclined-plane equation of the continuous wall of this contact hole meets

$f\left(r\right)=-\mathrm{hexp}\left(\frac{-r}{\mathrm{\α}}\right)$

Wherein, this preset reference point 134 is R ' apart from the horizontal range of basic point 135, then when this preset reference point 134 of curve negotiating, namely time f (r=R '), meet following two equations

$f(R\′)=-\mathrm{ph}=-\mathrm{hexp}\left(\frac{-R\′}{\mathrm{\α}}\right)$

And $\tan \mathrm{\θ}=\frac{(1-p)h}{R\′}$

3rd step, correct, actual angle (angle of the tangent line L ' of bottom) is β=1.5 θ (to the correction of basic point 135 tangential angle)

$\begin{array}{c}f\left(r\right)=-h\·\exp \{-r/\mathrm{\α}\}=h\·\exp \{r\·\frac{\ln \left(0.05\right)\·\tan \left(\mathrm{\β}\right)}{0.95h}\}\\ =-h\·\exp \{r\·\frac{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}{0.95h}\}\end{array}$

[contact hole fitting equation]

4th step, in generation, returns full scale equation formula, basic point is moved to the center of contact hole 131

[contact hole actual curve equation]

7th step, the opening radial width of the first conductive layer 140 of deriving.

First conductive layer 140 is generally positioned at the flat site of flatness layer 130, and the flat site due to flatness layer 130 is not perfectly smooth, and the liquid crystal molecule inclination angle in liquid crystal operation district levels off to 0.1 °, and therefore δ=0.1 ° is its higher limit.

$\begin{array}{c}\frac{\text{\∂f}(R\′)}{\∂R\′}\text{=tan\δ=}\frac{\∂}{\∂R\′}\{-h\·\exp [R\′\·\frac{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}{0.95h}\left]\right\}\\ \⇒-h\·\exp [R\′\·\frac{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}{0.95h}]\·\frac{\∂}{\∂R\′}[R\′\·\frac{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}{0.95h}]=tan\mathrm{\δ}\\ \text{\⇒exp[R\′\·}\frac{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}{0.95h}\text{]=}\frac{-0.95\·\tan \mathrm{\δ}}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\\ \⇒R\′\·\frac{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}{0.95h}=\ln \left[\frac{-0.95\·\tan \mathrm{\δ}}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\right]\\ \⇒R\′=\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\·\ln \left[\frac{-0.95\·\tan \mathrm{\δ}}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\right]\\ \⇒R=R_0+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\·\ln \left[\frac{-0.95\·\tan \mathrm{\δ}}{\ln \left(0.05\right)\·\tan (1.5\mathrm{\θ})}\right]\end{array}$

[trying to achieve the opening radial width of the first conductive layer 140]

During when only considering tilt angle (tile angle) in liquid crystal panel without feathering angle (twist angle), the overall penetrance of its liquid crystal panel meets following formula: T ∝ sin ²(Γ), wherein Γ represents phase delay angle, and T represents liquid crystal panel penetrance, and penetrance will be proportional to sine-squared function.Applicant finds, when the inclination angle of liquid crystal arrangement is between 0.1 to 8 degree, luminance brightness loss is now less than 1%, is the receptible scope of qualified display.Converge after whole above-mentioned parameter condition, namely obtain formula

$2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\·\ln [\frac{-0.134}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}\≤L_2\≤2*\{\frac{L_1}{2}+\frac{0.95h}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\ln [\frac{-0.00166}{\ln \left(0.05\right)\·\tan \left(1.5\mathrm{\θ}\right)}\left]\right\}$

In one embodiment, this angle theta is between 20 ~ 40 degree.In a preferred embodiment, this angle theta is between 25 ~ 35 degree.

With reference to Fig. 2 A, this metal level 120 can be source electrode or the drain electrode of a driving element.In one embodiment, device substrate 100 also comprises semi-conductor layer 137 between this metal level 120 and this substrate 110.The material of this semiconductor layer 137 can be polycrystalline silicon material, amorphous silicon material or metal oxide materials.

With reference to Fig. 2 B, device substrate 100 its also comprise interbedded insulating layer 160 and one second conductive layer 170, this interlayer insulating film 160 is located between this first conductive layer 140 and this second conductive layer 170 at least partly, and this second conductive layer 170 is electrically connected with this metal level 120 by this contact hole 131.

With reference to Fig. 3 A, the device substrate of the utility model embodiment is applied to a liquid crystal indicator 200, and it comprises a viewing area (pixel region) A and non-display area B.With reference to Fig. 3 B, the thin portion element of the 3B part in its display Fig. 3 A, liquid crystal indicator 200 also comprises sweep trace 201, signal wire 202, semiconductor layer 203, source electrode 240, contact hole 231 (being equivalent to the contact hole 131 of Fig. 2 A), the bottom surface 233 (being equivalent to the bottom surface 133 of Fig. 2 A) of contact hole, common electrode perforate 234 (being equivalent to the perforate 141 of Fig. 2 A), drain electrode 204, common electrode 205 and pixel electrode 210 etc. element in the A of viewing area.In the utility model embodiment, this metal level 120 comprises source electrode 240 or drain electrode 204, and wherein the pattern of this liquid crystal indicator can be FFS (fringe field switching) display device and IPS (horizontal component of electric field switching) display device.

With reference to Fig. 4, the liquid crystal indicator 200 of its display application the utility model embodiment, comprises device substrate 100, liquid crystal layer 250 and subtend substrate 260.

Apply embodiment of the present utility model, the luminance brightness loss of liquid crystal indicator is less than 1%, is acceptable scope, and avoids contact short circuit and memory capacitance deficiency etc. problem between the first conductive layer 140 and this second conductive layer 170.

Claims (14)

1. a device substrate, is characterized in that, this device substrate comprises:

Substrate;

Metal level, is positioned on this substrate;

Flatness layer, be positioned on this metal level, wherein this flatness layer has contact hole, and this contact hole has continuous wall and a bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has the first width;

First conductive layer, is positioned on this flatness layer, and has perforate and expose this contact hole, and this perforate has the second width above this contact hole;

Wherein, this first width and the second width need meet following formula:

Wherein, L ₁for this first width, L ₂for this second width, h is the thickness of this flatness layer, θ is the angle of an extended surface of a straight line between a preset reference point of continuous wall and a basic point and this bottom surface, wherein, this preset reference point is positioned on this continuous wall, and the vertical range of this preset reference point and this bottom surface is 0.95h, this basic point is the position, boundary of this continuous wall and this bottom surface.

2. device substrate as claimed in claim 1, it is characterized in that, this angle theta is between 20 ~ 40 degree.

3. device substrate as claimed in claim 2, it is characterized in that, this angle theta is between 25 ~ 35 degree.

4. device substrate as claimed in claim 1, it is characterized in that, this device substrate also comprises interlayer insulating film and the second conductive layer, and this interlayer insulating film is located between this first conductive layer and this second conductive layer at least partly, and this second conductive layer is electrically connected with this metal level by this contact hole.

5. device substrate as claimed in claim 1, it is characterized in that, this metal level is source electrode or the drain electrode of driving element.

6. device substrate as claimed in claim 5, it is characterized in that, this device substrate also comprises semiconductor layer, between this metal level and this substrate.

7. device substrate as claimed in claim 6, it is characterized in that, the material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.

8. a liquid crystal indicator, is characterized in that, this liquid crystal indicator comprises:

Subtend substrate;

Device substrate, relative to this subtend substrate;

Liquid crystal layer, is positioned between this subtend substrate and this device substrate; Wherein, this device substrate comprises:

Substrate;

Metal level, is positioned on this substrate;

Flatness layer, be positioned on this metal level, wherein this flatness layer has contact hole, and this contact hole has continuous wall and bottom surface, and this bottom surface exposes this metal level, and wherein this bottom surface has the first width;

First conductive layer, is positioned on this flatness layer, and has perforate and expose this contact hole, and this perforate has the second width above this contact hole;

Wherein, this first width and the second width need meet following formula:

Wherein, L ₁for this first width, L ₂for this second width, h is the thickness of this flatness layer, θ is the angle of an extended surface of a straight line between a preset reference point of continuous wall and a basic point and this bottom surface, wherein, this preset reference point is positioned on this continuous wall, and the vertical range of this preset reference point and this bottom surface is 0.95h, this basic point is the position, boundary of this continuous wall and this bottom surface.

9. liquid crystal indicator as claimed in claim 8, it is characterized in that, this angle theta is between 20 ~ 40 degree.

10. liquid crystal indicator as claimed in claim 9, it is characterized in that, this angle theta is between 25 ~ 35 degree.

11. liquid crystal indicators as claimed in claim 8, it is characterized in that, this liquid crystal indicator also comprises interlayer insulating film and the second conductive layer, this interlayer insulating film is located between this first conductive layer and this second conductive layer at least partly, and this second conductive layer is electrically connected with this metal level by this contact hole.

12. liquid crystal indicators as claimed in claim 11, is characterized in that, this metal level is source electrode or the drain electrode of driving element.

13. liquid crystal indicators as claimed in claim 12, it is characterized in that, this liquid crystal indicator also comprises semiconductor layer, between this metal level and this substrate.

14. liquid crystal indicators as claimed in claim 13, is characterized in that, the material of this semiconductor layer is polysilicon, amorphous silicon or metal oxide.