CN204167295U - Encapsulation tin ball and collapse chip - Google Patents
Encapsulation tin ball and collapse chip Download PDFInfo
- Publication number
- CN204167295U CN204167295U CN201420486087.3U CN201420486087U CN204167295U CN 204167295 U CN204167295 U CN 204167295U CN 201420486087 U CN201420486087 U CN 201420486087U CN 204167295 U CN204167295 U CN 204167295U
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- utility
- tin ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The utility model provides encapsulation tin ball and collapse chip.This encapsulation tin bag is drawn together: prevent the kernel subsided for supports outer; The outside of kernel is coated with refractory metal layer, and the outside of refractory metal layer is coated with soldering-tin layer.The tin ball that technique scheme of the present utility model limits when BGA or CSP encapsulates in solder reflow subsides, and effectively reduces short-circuit risks during lead-in wire Small Distance, improves bump density.
Description
Technical field
The utility model relates to technical field of semiconductor encapsulation, particularly relates to encapsulation tin ball and collapse chip.
Background technology
Current, in large scale integrated circuit manufacturing process, use BGA Package (abbreviation BGA package) and wafer-level package (being called for short CSP) more and more.The technique such as BGA package, CSP uses tin ball as the connection with printed circuit board (PCB) (pcb board) at present.In welding process, tin ball can subside after completing backflow, thus tin ball height step-down, diameter becomes large.When lead spacing is smaller, easily form bridge joint, cause short circuit.This feature limits the use of tin ball when lead spacing is less.Such as, when lead spacing is less than 180 microns, the diameter of ball is usually at 100 microns, and after subsiding, tin ball often forms bridge joint short circuit.Fig. 1 is structural representation after BGA or the CSP solder reflow according to prior art.1 is BGA or CSP encapsulation, and 2 is pcb board.
Utility model content
Provide hereinafter about brief overview of the present utility model, to provide about the basic comprehension in some of the present utility model.Should be appreciated that this general introduction is not summarize about exhaustive of the present utility model.It is not that intention determines key of the present utility model or pith, neither intended limitation scope of the present utility model.Its object is only provide some concept in simplified form, in this, as the preorder in greater detail discussed after a while.
The utility model provides a kind of and encapsulates with limiting the tin ball subsided, and comprising: prevent the kernel subsided for supports outer; Be coated on the refractory metal layer of described kernel outside, be coated on the soldering-tin layer of described refractory metal layer outside.
The utility model also provides a kind of collapse chip, comprising: chip body, chip body has pad, pad is fixedly connected with above-mentioned encapsulation tin ball.
By technique scheme, the tin ball that the utility model limits when BGA or CSP encapsulates in solder reflow subsides, and effectively reduces short-circuit risks during lead-in wire Small Distance, improves bump density.
Accompanying drawing explanation
With reference to below in conjunction with the explanation of accompanying drawing to the utility model embodiment, above and other objects, features and advantages of the present utility model can be understood more easily.Parts in accompanying drawing are just in order to illustrate principle of the present utility model.In the accompanying drawings, same or similar technical characteristic or parts will adopt same or similar Reference numeral to represent.
Fig. 1 be according to the solder reflow of prior art after BGA or CSP encapsulating structure schematic diagram;
Fig. 2 is the connection diagram of encapsulation tin ball according to the utility model embodiment and collapse chip and pcb board.
Fig. 3 is the ball fabrication processing figure subsided according to the restriction of the utility model embodiment.
Fig. 4 a is the kernel prepared according to the utility model embodiment;
Fig. 4 b is the refractory metal layer formed outward at kernel according to the utility model embodiment;
Fig. 4 c is the tin or ashbury metal weld layer that are formed outward at refractory metal layer according to the utility model embodiment.
Embodiment
With reference to the accompanying drawings embodiment of the present utility model is described.The element described in an accompanying drawing of the present utility model or a kind of execution mode and feature can combine with the element shown in one or more other accompanying drawing or execution mode and feature.It should be noted that for purposes of clarity, accompanying drawing and eliminate expression and the description of parts that have nothing to do with the utility model, known to persons of ordinary skill in the art and process in illustrating.Identical Reference numeral represents identical parts.
Fig. 2 is the connection diagram of encapsulation tin ball according to the utility model embodiment and collapse chip and pcb board.This encapsulation limits the tin ball 6 subsided and comprises: prevent the kernel 3 subsided for supports outer; Be coated on the refractory metal layer 4 of kernel outside, be coated on the soldering-tin layer 5 of refractory metal layer outside.This collapse chip comprises: chip body, and described chip body has pad, pad is fixedly connected with above-mentioned encapsulation tin ball.Above-mentioned tin ball can be made up of following technique.
Fig. 3 is the tin ball fabrication processing figure subsided according to the restriction of the utility model embodiment.
When preparing encapsulation with tin ball, first prepare the kernel (step S301) of tin ball.The kernel 3 of tin ball is preferably spherical, and it with metal or nonmetally can to serve as, such as, and metallic copper, nickel, lead etc., nonmetal silica, silicon, carborundum etc.Preferably, kernel 3 adopts copper, nickel or silica.Wherein, the preliminary treatment increasing surface conjunction power is carried out to kernel 3 surface prepared, such as, oil removing, rust cleaning, microcorrosion etc.Fig. 4 a illustrates the kernel 3 prepared according to the utility model embodiment.
Then, as shown in Figure 4 b, form refractory metal layer 4 (step S302) outward at metal or nonmetallic kernel, this can have been come by usual metal surface treatment technology.Such as, plating or chemical plating.Through this process, form refractory metal layer 4 in kernel outside.Preferably, the metal or alloy that Selection radio tin fusing point is higher, ensures that refractory metal layer 4 also keeps solid state when outer field tin melting.Such as nickel, cobalt, silver or other metals and alloy.
Next, as illustrated in fig. 4 c, on the surface of refractory metal layer 4, by modes such as plating, chemical plating or infiltrations, the alloy (step S303) of tin or tin is formed, as the soldering-tin layer 5 of backflow.
Due to the support having spherical inner core, the tin ball that the technical solution of the utility model limits when BGA or CSP encapsulates in solder reflow subsides, and effectively reduces short-circuit risks during lead-in wire Small Distance, improves bump density.
Although be illustrated the utility model in conjunction with BGA or CSP packaging technology, can predict, tin ball of the present utility model or ashbury metal ball and method of manufacturing technology thereof are also applicable to other encapsulation or other circuit manufacture view.
Last it is noted that above embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to previous embodiment, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the utility model.
Claims (3)
1. encapsulating with limiting the tin ball subsided, it is characterized in that, comprise: preventing the kernel subsided for supports outer; Be coated on the refractory metal layer of described kernel outside, be coated on the soldering-tin layer of described refractory metal layer outside.
2. encapsulation according to claim 1 limits the tin ball subsided, and it is characterized in that, described kernel is spherical.
3. a collapse chip, comprises chip body, described chip body has pad, it is characterized in that, described pad is fixedly connected with the tin ball described in claim 1 or 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420486087.3U CN204167295U (en) | 2014-08-27 | 2014-08-27 | Encapsulation tin ball and collapse chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420486087.3U CN204167295U (en) | 2014-08-27 | 2014-08-27 | Encapsulation tin ball and collapse chip |
Publications (1)
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CN204167295U true CN204167295U (en) | 2015-02-18 |
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CN201420486087.3U Active CN204167295U (en) | 2014-08-27 | 2014-08-27 | Encapsulation tin ball and collapse chip |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113113374A (en) * | 2021-04-08 | 2021-07-13 | 重庆群崴电子材料有限公司 | Ball for encapsulation and encapsulation structure thereof |
-
2014
- 2014-08-27 CN CN201420486087.3U patent/CN204167295U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113113374A (en) * | 2021-04-08 | 2021-07-13 | 重庆群崴电子材料有限公司 | Ball for encapsulation and encapsulation structure thereof |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |