CN204143275U - Semiconductor laser automatic temperature-adjusting control system - Google Patents
Semiconductor laser automatic temperature-adjusting control system Download PDFInfo
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- CN204143275U CN204143275U CN201420539901.3U CN201420539901U CN204143275U CN 204143275 U CN204143275 U CN 204143275U CN 201420539901 U CN201420539901 U CN 201420539901U CN 204143275 U CN204143275 U CN 204143275U
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Abstract
The utility model relates to a kind of semiconductor laser automatic temperature-adjusting control system, comprise LD laser diode, TEC refrigerator and PIN diode, LD laser diode is connected external circuit with PIN diode, also comprise temperature detection amplifying circuit, controller and TEC power amplifier, the working temperature of laser instrument is made to remain on about 20 DEG C, improve its functional reliability, and extend the serviceable life of laser instrument.
Description
Technical field
the present invention relates to the semiconductor laser field of communication facilities, be specifically related to the temperature control system of semiconductor laser.
Background technology
At fiber optic communication field, usual use semiconductor laser is as light source, although temperature variation causes the change of optical output power of laser can be regulated by A P C circuit, Output optical power is made to recover normal, but the emission wavelength of semiconductor laser and tube core (i.e. laser diode, Laser Diode, LD) temperature is closely related, temperature raises will cause wavelength elongated (being generally 0.1nm DEG C), for general Single wavelength optical communication system, the drift of wavelength there is no too large impact to system performance.But for dense wavelength division multiplexing system (DWDM), because interchannel wavelength interval is very little, keep the stable of wavelength just to become extremely important.Such as, be operated in 32 wave system systems of C-band, path wavelength is spaced apart 100GHz(and is about 0.8nm), and be operated in 160 wave system systems of C+L wave band, path wavelength is spaced apart 50GHz(and is about 0.4nm).Therefore, if do not controlled the temperature of laser tube core, small temperature variation will cause the unavailable of whole system.
In addition, semiconductor laser is thermally sensitive device, and the stability of its threshold current, output wavelength and Output optical power is all very responsive to temperature, and its mission life is also closely related with its working temperature.Experiment shows, the life-span that temperature often raises 30 DEG C of laser instruments can reduce an order of magnitude.For the occasion that reliability requirement is high, and ensure that the life-span of laser instrument just needs to be controlled die temperature.
Summary of the invention
the technical problem to be solved in the present invention is to provide a kind of automatic temperature-adjusting control system of semiconductor laser, in order to ensure laser instrument long-term stable operation, adopts automatic temp. controlling circuit to make the working temperature of laser instrument remain on about 20 DEG C.
For solving the problems of the technologies described above, the present invention relates to a kind of semiconductor laser automatic temperature-adjusting control system, comprise LD laser diode, TEC refrigerator and PIN diode, described LD laser diode is connected external circuit with PIN diode, also comprise temperature detection amplifying circuit, controller and TEC power amplifier, described temperature detection amplifying circuit comprises a Wheatstone bridge and at least one operational amplifier A 1, described Wheatstone bridge is by two fixed resistance R1, R2, a thermistor Rt and adjustable resistance forms R3, wherein R1, R2 connects, the two intermediate point is taken as Vb, thermistor Rt connects with adjustable resistance R3, the two intermediate point is taken as Va, Vb, Va connects the differential input terminal of described operational amplifier A 1 respectively, described controller comprises a PI controller circuitry, the input end of described PI controller circuitry connects the output terminal of operational amplifier A 1 in temperature detection amplifying circuit, the output terminal of described PI controller circuitry connects TEC power amplifier, described TEC power amplifier comprises at least one transistor BG, the base stage of described transistor BG connects the output terminal of PI controller circuitry, and the emitting stage of described transistor BG connects TEC refrigerator.
Preferably, described PI controller circuitry comprises an operational amplifier A 2, in described PI controller circuitry, the in-phase input end of operational amplifier A 2 is connected with the output terminal of operational amplifier A 1 in described temperature detection amplifying circuit, in described PI controller circuitry, the out-phase input end of operational amplifier A 2 is by a pull-up resistor R4 ground connection, at least one pull-up resistor R5 is connected, a described pull-up resistor electric capacity C in parallel between its output terminal with in-phase input end.The effect of PI controller carries out the computings such as ratio, integration, differential to the error signal in system, forms suitable control signal, to obtain satisfied control performance.
Preferably, described thermistor Rt is the resistance of negative temperature coefficient, and namely the resistance size of thermistor Rt and measured temperature are inversely proportional to.
Preferably, described thermistor Rt, LD laser diode, TEC refrigerator and PIN diode be fixed on heat sink on, and to be tightly packaged together.
The course of work of the present invention is: first determine LD die operating temperatures, is preferably taken as 20 DEG C; Detect the resistance size of thermistor Rt (20 DEG C) at this temperature; The equilibrium condition of Wheatstone bridge is R1Rt=R2R3, now Va=Vb, so choose R1=R2, and R3=Rt (20 DEG C).Va=Vb under this state, therefore the input of A1 no differential signal, thus A1 no-output voltage, so that BG is without base current, makes BG without enough emitter current Ie, so refrigerator TEC not refrigeration under 20 DEG C of states.When environment temperature raises, the output voltage ↑ → BG base current ↑ → refrigeration electric current I e generation → refrigerator refrigeration → heat sink temperature ↓ → LD die temperature of LD die temperature ↑ → heat sink temperature ↑ → Rt resistance ↓ → Va ↓ → A ↓.
Beneficial effect of the present invention is: adopt automatic temp. controlling circuit (ATC) to make the working temperature of laser instrument remain on about 20 DEG C, improve its functional reliability, and extend the serviceable life of laser instrument.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of automatic temp. controlling circuit of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
See Fig. 1, the present invention relates to a kind of semiconductor laser automatic temperature-adjusting control system, comprise LD laser diode, TEC refrigerator and PIN diode, LD laser diode is connected external circuit with PIN diode.Also comprise temperature detection amplifying circuit, controller and TEC power amplifier, temperature detection amplifying circuit comprises a Wheatstone bridge and at least one operational amplifier A 1, Wheatstone bridge forms R3 by two fixed resistance R1, R2, a thermistor Rt and adjustable resistance, wherein R1, R2 series connection, the two intermediate point is taken as Vb, thermistor Rt connects with adjustable resistance R3, and the two intermediate point is taken as Va, the differential input terminal of Vb, Va difference concatenation operation amplifier A1; Controller comprises a PI controller circuitry, the input end of PI controller circuitry connects the output terminal of operational amplifier A 1 in temperature detection amplifying circuit, the output terminal of PI controller circuitry connects TEC power amplifier, TEC power amplifier comprises at least one transistor BG, the base stage of transistor BG connects the output terminal of PI controller circuitry, and the emitting stage of transistor BG connects TEC refrigerator.Thermistor Rt is the resistance of negative temperature coefficient, and namely the resistance size of thermistor Rt and measured temperature are inversely proportional to.
PI controller circuitry comprises an operational amplifier A 2, in described PI controller circuitry, the in-phase input end of operational amplifier A 2 is connected with the output terminal of operational amplifier A 1 in described temperature detection amplifying circuit, in described PI controller circuitry, the out-phase input end of operational amplifier A 2 is by a pull-up resistor R4 ground connection, at least one pull-up resistor R5 is connected, a described pull-up resistor electric capacity C in parallel between its output terminal with in-phase input end.The effect of PI controller carries out the computings such as ratio, integration, differential to the error signal in system, forms suitable control signal, to obtain satisfied control performance.
Thermistor Rt, LD laser diode, TEC refrigerator and PIN diode be fixed on heat sink on, and to be tightly packaged together.
" transducing " electric bridge be made up of R1, R2, R3 and thermistor Rt, is converted to the change of temperature by electric bridge the change of electricity.The differential input terminal of operational amplifier A 1 is connected across the opposite end of electric bridge, in order to change the base current of transistor BG.When design temperature (as 20 DEG C), choose R1=R2, R3=Rt (20 DEG C).Va=Vb under this state, therefore the input of A1 no differential signal, thus A1 no-output voltage, so that BG is without base current, and the electric current flowing through refrigerator TEC is also zero, now refrigerator TEC not refrigeration.When environment temperature raises, die temperature and the heat sink temperature of LD also raise, and the resistance of thermistor Rt diminishes, electric bridge out of trim, Va voltage reduces, the output voltage of operational amplifier A 1 raises, and the base current of transistor BG increases, and causes penetrating grade electric current I e and increases, the electric current of refrigerator TEC increases simultaneously, refrigerator TEC temperature reduces, and heat sink and LD die temperature also reduces, and thus keeps temperature constant.Output voltage ↑ → BG base current ↑ → refrigeration electric current I e generation → refrigerator refrigeration → heat sink temperature ↓ → LD the die temperature of i.e. LD die temperature ↑ → heat sink temperature ↑ → Rt resistance ↓ → Va ↓ → A ↓.
Be more than better embodiment of the present invention, but protection scope of the present invention is not limited thereto.Any those of ordinary skill in the art are in the technical scope disclosed by the present invention, and the conversion expected without creative work or replacement, all should be encompassed within protection scope of the present invention.Therefore the protection domain that protection scope of the present invention should limit with claim is as the criterion.
Claims (4)
1. a semiconductor laser automatic temperature-adjusting control system, comprise LD laser diode, TEC refrigerator and PIN diode, described LD laser diode is connected external circuit with PIN diode, it is characterized in that: comprise temperature detection amplifying circuit, controller and TEC power amplifier, described temperature detection amplifying circuit comprises a Wheatstone bridge and at least one operational amplifier, described Wheatstone bridge is by two fixed resistances, a thermistor and an adjustable resistance are formed, wherein two fixed resistance series connection, the two intermediate point is taken as A, thermistor is connected with adjustable resistance, the two intermediate point is taken as B, A, B connects the differential input terminal of described operational amplifier respectively, described controller comprises a PI controller circuitry, the input end of described PI controller circuitry connects the output terminal of operational amplifier in temperature detection amplifying circuit, the output terminal of described PI controller circuitry connects TEC power amplifier, described TEC power amplifier comprises at least one transistor, the base stage of described transistor connects the output terminal of PI controller circuitry, and the emitting stage of described transistor connects TEC refrigerator.
2. semiconductor laser automatic temperature-adjusting control system as claimed in claim 1, it is characterized in that: described PI controller circuitry comprises an operational amplifier, in described PI controller circuitry, the in-phase input end of operational amplifier is connected with the output terminal of operational amplifier in described temperature detection amplifying circuit, in described PI controller circuitry, the out-phase input end of operational amplifier is by a pull-up resistor ground connection, at least one pull-up resistor is connected, a described pull-up resistor electric capacity in parallel between its output terminal with in-phase input end.
3. semiconductor laser automatic temperature-adjusting control system as claimed in claim 2, is characterized in that: described thermistor is the resistance of negative temperature coefficient.
4. semiconductor laser automatic temperature-adjusting control system as claimed in claim 3, is characterized in that: described thermistor, LD laser diode, TEC refrigerator and PIN diode are tightly packaged together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420539901.3U CN204143275U (en) | 2014-09-19 | 2014-09-19 | Semiconductor laser automatic temperature-adjusting control system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420539901.3U CN204143275U (en) | 2014-09-19 | 2014-09-19 | Semiconductor laser automatic temperature-adjusting control system |
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| CN204143275U true CN204143275U (en) | 2015-02-04 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104298277A (en) * | 2014-09-19 | 2015-01-21 | 江苏骏龙电力科技股份有限公司 | Automatic temperature control system of semiconductor laser |
| CN107687915A (en) * | 2016-08-03 | 2018-02-13 | 麦克罗特尔电子技术股份公司 | The piezoresistive pressure sensor of calibrating resistor provided with biasing |
| CN110940843A (en) * | 2019-11-15 | 2020-03-31 | 国网山西省电力公司大同供电公司 | High-frequency current demodulation device for fiber grating current sensor |
-
2014
- 2014-09-19 CN CN201420539901.3U patent/CN204143275U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104298277A (en) * | 2014-09-19 | 2015-01-21 | 江苏骏龙电力科技股份有限公司 | Automatic temperature control system of semiconductor laser |
| CN107687915A (en) * | 2016-08-03 | 2018-02-13 | 麦克罗特尔电子技术股份公司 | The piezoresistive pressure sensor of calibrating resistor provided with biasing |
| CN110940843A (en) * | 2019-11-15 | 2020-03-31 | 国网山西省电力公司大同供电公司 | High-frequency current demodulation device for fiber grating current sensor |
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Address after: 214500, No. 2, Jianan Road, Jingjiang, Jiangsu, Taizhou Patentee after: Jiangsu Chun long photoelectric Polytron Technologies Inc Address before: 214500, No. 2, Jianan Road, Jingjiang, Jiangsu, Taizhou Patentee before: Jiangsu Junlong Electric Power Technology Co., Ltd. |