CN204129712U - Narrow-frame embedded active matrix organic light emitting diode display touch structure - Google Patents

Abstract

The utility model provides an embedded active matrix organic light-emitting diode display touch structure with a narrow frame. A first and a second substrate sandwich an organic light emitting diode layer in a parallel paired configuration. A first sensing electrode layer has M first conductor blocks and N connection lines arranged in a first direction, and a second sensing electrode layer has N second conductor blocks arranged in a second direction for To sense touch, each second conductor block extends to one side of the touch structure with a corresponding connection line. A thin film transistor layer has K gate drive lines and L source drive lines. The positions of the M first conductor blocks, N connection lines and N second conductor blocks are based on the K gate drive lines and the N second conductor blocks. The L source driving lines are positioned correspondingly.

Description

Embedded Active Matrix Organic Light-Emitting Diode Display Touch Structure with Narrow Bezel

technical field

The utility model relates to a structure with a touch panel, in particular to an embedded active matrix organic light-emitting diode display touch structure with a narrow frame.

Background technique

Modern consumer electronic devices are often equipped with touch pads as one of their input devices. Touch panels can be divided into resistive, capacitive, acoustic and optical types according to different sensing principles.

The technical principle of the touch panel is that when a finger or other medium touches the screen, it detects voltage, current, sound waves or infrared rays according to different sensing methods, so as to measure the coordinate position of the touch point. For example, the resistive type uses the potential difference between the upper and lower electrodes to calculate the position of the pressure point to detect the location of the touch point. The capacitive touch panel uses the capacitance change generated by the electrostatic combination between the arranged transparent electrodes and the human body, and detects its coordinates from the generated current or voltage.

With the popularization of smart phones, the demand for multi-touch technology is increasing day by day. At present, multi-touch is mainly realized through projected capacitive (Projected Capacitive) touch technology.

The projected capacitive technology mainly uses a double-layer Indium Tin Oxide (ITO) material to form a row-column interlaced sensing unit matrix to detect precise touch positions. The basic principle of projected capacitive touch technology is based on capacitive sensing. By designing multiple etched indium tin oxide electrodes, an array of transparent wires with different planes and perpendicular to each other is added to form a drive similar to X and Y axes. Wire. These wires are all controlled by the controller, which scans sequentially to detect changes in capacitance values and feeds them to the controller.

FIG. 1 is a schematic diagram of a conventional organic light emitting diode display touch panel structure 100 . The sensing conductor lines 110 , 120 on the known organic light emitting diode display touch panel structure 100 are arranged along a first direction (Y) and a second direction (X). When the sensing conductor line 120 performs touch sensing and transmits the sensed signal to the control circuit 131 on a flexible circuit board 130, it needs to be connected to the flexible circuit through the side wiring 150 of the panel 140. plate 130. Such a design will increase the width of the frame of the touch panel, which is not suitable for the trend of narrow frame design. Therefore, there is still room for improvement in the known organic light emitting diode display touch structure.

Utility model content

The main purpose of the present invention is to provide a narrow-frame built-in active matrix organic light-emitting diode display touch structure, which only needs to set up connecting lines on one side, and does not need to be configured on the other three sides. Therefore, the other three sides can adopt a frameless design to simplify the configuration of the touch panel and improve the accuracy of touch point detection.

The utility model proposes a narrow frame built-in active matrix organic light emitting diode display touch structure, which is characterized in that it includes:

a first substrate;

A second substrate, the first substrate and the second substrate are configured in parallel pairs to sandwich an organic light emitting diode layer between the two substrates;

A first sensing electrode layer is located on the side of the second substrate facing the organic light emitting diode layer, and has M first conductor blocks and N connecting lines arranged in a first direction for sensing and contacting Control, wherein, M, N are positive integers;

A second sensing electrode layer is located on the surface of the first sensing electrode layer facing the organic light emitting diode layer, and has N second conductor blocks arranged in a second direction for sensing Each second conductor block extends to one side of the embedded active matrix organic light emitting diode display touch structure of the narrow frame with a corresponding i-th connection line, i is a positive integer and 1≤i≤N ;as well as

A thin film transistor layer, located on the surface of the second sensing electrode layer facing the organic light emitting diode layer, the thin film transistor layer has K gate driving lines and L source driving lines, according to a display driving signal and a display pixel signal to drive a pixel drive transistor and a pixel capacitor of a corresponding pixel drive circuit to perform a display operation, wherein K and L are positive integers;

Wherein, the positions of the M first conductor blocks, the N connection lines, and the N second conductor blocks are based on the positions of the K gate drive lines and the L source drive lines of the thin film transistor layer set accordingly.

Wherein, each first conductor block is respectively extended to the same side of the second substrate by corresponding metal traces, so as to be further connected to a flexible circuit board.

Wherein, the N connecting wires are made of metal conductive material.

Wherein, each conductor block of the M first conductor blocks and the N second conductor blocks is composed of a plurality of metal induction lines.

Wherein, the multiple metal induction lines of each conductor block of the M first conductor blocks and the N second conductor blocks form a quadrilateral area, and the metal induction lines in each quadrilateral area are electrically connected together , and any two quadrilateral regions are not connected.

Wherein, the first direction is a vertical second direction.

Wherein, each connecting line of the N connecting lines is arranged between two first conductor blocks.

Wherein, the quadrilateral area is one of the following shapes: rectangle, square.

Wherein, each conductor block of the M first conductor blocks and the N second conductor blocks is formed by a plurality of metal induction lines, and the plurality of metal induction lines are made of conductive metal material or alloy material.

The utility model also proposes a narrow frame built-in active matrix organic light emitting diode display touch structure, which is characterized in that it includes:

a first substrate;

A second substrate, the first substrate and the second substrate are configured in parallel pairs to sandwich an organic light emitting diode layer between the two substrates;

A second sensing electrode layer is located on the side of the second substrate facing the organic light emitting diode layer, and has N second conductor blocks arranged in a second direction for sensing touch, each of the first The two conductor blocks extend to one side of the embedded active matrix organic light emitting diode display touch structure of the narrow frame with a corresponding one i-th connection line, i is a positive integer and 1≤i≤N;

A first sensing electrode layer, located on the surface of the second sensing electrode layer facing the organic light emitting diode layer, and having M first conductor blocks and N connecting lines arranged in a first direction, For inductive touch, where M and N are positive integers; and

A thin film transistor layer, located on the surface of the first sensing electrode layer facing the organic light emitting diode layer, the thin film transistor layer has K gate driving lines and L source driving lines, according to a display driving signal and a display pixel signal to drive a pixel drive transistor and a pixel capacitor of a corresponding pixel drive circuit to perform a display operation, wherein K and L are positive integers;

Wherein, the positions of the M first conductor blocks, the N connection lines, and the N second conductor blocks are based on the positions of the K gate drive lines and the L source drive lines of the thin film transistor layer set accordingly.

The beneficial effect of the utility model is that only one side needs to be provided with connecting lines, and the other three sides do not need to be configured. Therefore, the other three sides can adopt a frameless design to simplify the configuration of the touch panel, and at the same time, the accuracy of touch point detection can be improved, and the brightness of the OLED display panel can be brighter than the known technology.

Description of drawings

In order to further illustrate the technical content of the present utility model, below in conjunction with embodiment and accompanying drawing, describe in detail as follows, wherein:

FIG. 1 is a schematic diagram of a conventional organic light emitting diode display touch panel structure.

FIG. 2 is a stacked schematic diagram of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention.

FIG. 3 is a schematic diagram of a conductive block and connection of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention.

Fig. 4 is the sectional view of A-A' place in Fig. 3 of the present utility model.

FIG. 5 is another schematic diagram of a conductor block of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention.

Fig. 6 is a schematic diagram of the first conductor block of the present invention.

FIG. 7 is another stacked schematic diagram of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention.

FIG. 8 is another stacked schematic diagram of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention.

Detailed ways

The utility model relates to a narrow frame embedded active matrix organic light emitting diode display touch structure. FIG. 2 is a stacked schematic view of a narrow frame embedded active matrix organic light emitting diode display touch structure 200 of the present invention. As shown in the figure, the narrow frame embedded active matrix organic light emitting diode display touch The structure 200 includes a first substrate 210, a second substrate 220, an OLED layer 230, a first sensing electrode layer 240, a second sensing electrode layer 250, a first insulating layer 260, and a second insulating layer 270. , a cathode layer 280, an anode layer 290, and a thin film transistor layer 300.

The first substrate 210 and the second substrate 220 are preferably glass substrates, the first substrate 210 and the second substrate 220 are arranged in parallel and paired, and the organic light emitting diode layer 230 is sandwiched between the two substrates 210, 220 between. The second substrate 220 is generally called a thin film transistor substrate (thin film transistor substrate, TFT substrate), and the thin film transistor used as a switch is generally disposed on the thin film transistor substrate. The present invention is a bottom-emitting type, so a user's finger touches the second substrate 220 instead of the known first substrate 210 .

Since the user's finger touches the second substrate 220 , the sensing electrode layer is close to the second substrate 220 to obtain a stronger touch sensing signal.

The first sensing electrode layer 240 is located on the side of the second substrate 220 facing the OLED layer 230, and has M first conductor blocks 40-1, 40- arranged in a first direction (Y). 2, . . . , 40-M and N connecting wires 40-1, 40-2, . In this embodiment, the M first conductor blocks 40-1, 40-2, ..., 40-M and the N connecting lines 40-1, 40-2, ..., 40-N are made of conductive metal materials. production.

The second sensing electrode layer 250 is located on the surface of the first sensing electrode layer 240 facing the OLED layer 230, and has N second conductor blocks 50 arranged in a second direction (X). - 1, 50-2, ..., 50-N, for inductive touch, each second conductor block 50-1, 50-2, ..., 50-N is connected to a corresponding i-th connection line 40- 1, 40-2, . . . , 40-N extend to one side 201 of the embedded active matrix organic light emitting diode display touch structure 200 of the narrow frame, i is a positive integer and 1≤i≤N. Wherein, the first direction is a vertical second direction.

The thin film transistor layer 300 is located on the surface of the second sensing electrode layer 250 facing the organic light emitting diode layer 230, the thin film transistor layer 300 has K gate driving lines and L source driving lines, according to a The display driving signal and a display pixel signal are used to drive the pixel driving transistor and the pixel capacitor of the corresponding pixel driving circuit, and then perform the display operation, wherein K and L are positive integers. Among them, the M first conductor blocks 40-1, 40-2, ..., 40-M, the N connecting lines 40-1, 40-2, ..., 40-N, and the N second conductor blocks 50-1, 50-2, ..., 50-N The positions of are set corresponding to the positions of the K gate driving lines and the L source driving lines of the thin film transistor layer 300 .

A second insulating layer 270 can be disposed between the thin film transistor layer 300 and the second sensing electrode layer 250 .

FIG. 3 is a schematic diagram of a conductive block and connection of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention. As shown in FIG. 3, each of the M first conductor blocks 40-1, 40-2, ..., 40-M and the N second conductor blocks 50-1, 50-2, ..., 50-N The conductor line is composed of multiple metal induction lines. The M first conductor blocks 40-1, 40-2, . . . , 40-M and the N second conductor blocks 50-1, 50-2, . . . , 50-N are not electrically connected. A first insulating layer 260 can be disposed between the first sensing electrode layer 240 and the second sensing electrode layer 250 . Insulation pads can also be provided only at the intersections of the M first conductor blocks 40-1, 40-2, ..., 40-M and the N second conductor blocks 50-1, 50-2, ..., 50-N .

The M first conductor blocks 40-1, 40-2, ..., 40-M and the N second conductor blocks 50-1, 50-2, ..., 50-N of each conductor block A plurality of metal sensing lines form a quadrilateral area, the metal sensing lines in each quadrilateral area are electrically connected together, and any two quadrilateral areas are not connected. Wherein, the quadrilateral area is one of the following shapes: rectangle, square.

Each of the N connection lines 40-1, 40-2, ..., 40-N is disposed between two first conductor blocks 40-1, 40-2, ..., 40-M.

The plurality of conductor blocks of each of the M first conductor blocks 40-1, 40-2, ..., 40-M and the N second conductor blocks 50-1, 50-2, ..., 50-N The metal sensing lines in each quadrangular area formed by the metal sensing lines are made of conductive metal material or alloy material. Wherein, the conductive metal material or alloy material is one of the following: molybdenum, barium, aluminum, silver, copper, titanium, nickel, tantalum, cobalt, tungsten, magnesium (Mg), calcium (Ca), potassium (K ), lithium (Li), indium (In), and their alloys.

FIG. 3 is a schematic diagram of a conductor block of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention. As shown in FIG. 3, each second conductor block 50-1, 50-2, ..., 50-N is electrically connected to the corresponding connection line 40-1, 40-2, ..., 40-N at the dotted ellipse , and each of the N connection lines 40-1, 40-2, ..., 40-N is also extended to the narrow frame embedded active matrix organic light emitting diode display touch The same side 201 of the structure 200 is further connected to a flexible circuit board 600 . Each of the first conductor blocks 40 - 1 , 40 - 2 , . . . , 40 -M extends to the same side 201 of the panel with corresponding metal traces, so as to be further connected to a flexible circuit board 600 .

The surface of the embedded AMOLED display touch structure 200 with a narrow frame is used to receive at least one touch point. It further includes a control circuit 610, which is electrically connected to the M first conductor blocks 40-1, 40-2, . . . , 40-M and the N second conductor blocks 50 through the flexible circuit board 600. -1, 50-2, ..., 50-N.

The M first conductor blocks 40-1, 40-2, ..., 40-M and the N second conductor blocks 50-1, 50-2, ..., 50-N are contacted by a finger or an external object. The embedded active matrix organic light emitting diode touching the narrow frame displays the position of at least one touch point of the touch structure 200 and correspondingly generates a sensing signal. A control circuit 610 is electrically connected to the M first conductor blocks 40-1, 40-2, . . . , 40-M and the N second conductor blocks 50-1, 50- through the flexible circuit board 600 2, . . . , 50-N, and calculate the coordinates of the at least one touch point according to the sensing signal.

Fig. 4 is the sectional view of A-A' place in Fig. 3 of the utility model. As shown in FIG. 4 , the second conductor block 50 -N is electrically connected to the connection line 41 - 1 at the B oval in FIG. 3 . As shown in FIG. 2 and FIG. 4, the first insulating layer 260 is provided between the first sensing electrode layer 240 and the second sensing electrode layer 250, and the second conductor block 50-N passes through a through hole (via) 52 passes through the first insulating layer 260 and is electrically connected to the connection line 41-1, that is, through the connection line 41-1, the second conductor block 50-N can transmit the sensed signal to the control circuit 610 .

FIG. 5 is another schematic diagram of a conductor block of a narrow frame embedded active matrix organic light emitting diode display touch structure of the present invention. The main difference from FIG. 3 is that the lengths of the N connecting lines 40-1, 40-2, . . . , 40-N are not uniform, but gradually decrease.

Fig. 6 is a schematic diagram of any first conductor block 40-1, 40-2, ..., 40-M of the present utility model, as shown in Fig. 6, the quadrangular area is composed of 3 A rectangle formed by one metal induction line L2 and two metal induction lines L1 in the second direction (X). In other embodiments, the number of the metal sensing lines can be changed as required.

The width of the line segment L1 and the line segment L2 is preferably the same as or slightly smaller than the width of the gate driving line or the source driving line of the thin film transistor layer 300 . The M first conductor blocks 40-1, 40-2, ..., 40-M, the N connecting lines 40-1, 40-2, ..., 40-N, and the N second conductor blocks 50- The positions of 1, 50-2, . That is, looking from the second substrate 220 to the direction of the first substrate 210, the M first conductor blocks 40-1, 40-2, ..., 40-M, the N connecting lines 40-1, 40 -2, ..., 40-N, and the N second conductor blocks 50-1, 50-2, ..., 50-N are the K gate drive lines and the L source lines arranged on the thin film transistor layer 300 The position of the electrode driving line is directly above, so the light-emitting area will not be blocked and the aperture ratio will be reduced.

The first insulating layer 260 is located between the first sensing electrode layer 240 and the second sensing electrode layer 250 .

The thin film transistor layer (TFT) 300 is located on the surface of the second sensing electrode layer 250 facing the OLED layer 230 . The thin film transistor layer 300 has K gate driving lines and L source driving lines, according to a display driving signal and a display pixel signal, to drive the corresponding pixel transistors and pixel capacitors, and then perform display operations, wherein, K, L is a positive integer.

The thin film transistor layer 300 not only has a plurality of gate driving lines and a plurality of source driving lines, but also includes a plurality of pixel driving circuits 301 . The thin film transistor layer 300 is used to drive the corresponding pixel driving circuit 301 according to a display pixel signal and a display driving signal, and then perform a display operation.

Depending on the design of the pixel driving circuit 301, for example, 2T1C is designed with 2 TFTs and 1 storage capacitor to form the pixel drive circuit 301, and 6T2C is designed with 6 TFTs and 2 storage capacitors to form the pixel drive circuit 301. The gate 3011 of at least one thin film transistor in the pixel driving circuit 301 is connected to a gate driving line (not shown in the figure), and depending on the design of the driving circuit, the source/drain 3013 of at least one thin film transistor in the control circuit is connected to a source An electrode driving line (not shown in the figure), the source/drain 3015 of at least one thin film transistor in the pixel driving circuit 301 is connected to a corresponding anode pixel electrode 291 in the anode layer 290 .

The cathode layer 280 is located on a side of the first substrate 210 facing the OLED layer 230 . Meanwhile, the cathode layer 280 is located between the first substrate 210 and the OLED layer 230 . The cathode layer 280 is formed of metal conductive material. Preferably, the cathode layer 280 is formed of a metal material, which is selected from one of the following groups: aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), potassium ( K), lithium (Li), indium (In), and alloys thereof, or a combination of lithium fluoride (LiF), magnesium fluoride (MgF2), lithium oxide (Li0) and Al. Since the cathode layer 280 is made of a metal material, it reflects light, so most of the light sources are directed toward the second substrate 220 , forming a bottom-emitting display type.

The light generated by the OLED layer 230 is reflected to display images on the second substrate 220 . The cathode layer 280 is electrically connected to the entire piece, so it can be used as shielding. At the same time, the cathode layer 280 also receives the current from the anode pixel electrode 291 .

The anode layer 290 is located on a side of the TFT layer 300 facing the OLED layer 230 . The anode layer 290 has a plurality of anode pixel electrodes 291 . Each anode pixel electrode 291 is corresponding to a pixel transistor of the pixel driving circuit 301 of the thin film transistor layer 300, that is, each anode pixel electrode of the plurality of anode pixel electrodes is corresponding to the corresponding pixel driving circuit 301 of the pixel transistor. The source/drain electrodes 3015 of the pixel transistors are connected to form a pixel electrode of a specific color, such as a red pixel electrode, a green pixel electrode, or a blue pixel electrode.

The OLED layer 230 includes a hole transporting layer (HTL) 231 , an emitting layer (emitting layer) 233 , and an electron transporting layer (HTL) 235 . The organic light emitting diode layer 230 preferably generates red, blue and green primary colors of light, so the three primary colors of red, blue and green can be generated without using a known color filter layer (color filter) to filter.

FIG. 7 is another stacked schematic diagram of a narrow frame embedded active matrix organic light emitting diode display touch structure 700 of the present invention. The main difference from FIG. 2 is that the positions of the cathode layer 710 and the anode layer 720 are reversed. The cathode layer 710 has a plurality of cathode pixel electrodes 711 . Each cathode pixel electrode 711 is corresponding to a pixel driving transistor of the pixel driving circuit 301 of the thin film transistor layer 300, that is, each cathode pixel electrode of the plurality of cathode pixel electrodes is corresponding to the corresponding pixel driving circuit 301. The source/drain 3015 of the pixel driving transistor is connected to form a pixel electrode of a specific color, such as a red pixel electrode, a green pixel electrode, or a blue pixel electrode.

The positions of the cathode layer 710 and the anode layer 720 in FIG. The position of the transmission sublayer (electron transporting layer, HTL) 735 is also reversed. The cathode layer 710 has a plurality of cathode pixel electrodes 711, and each cathode pixel electrode of the plurality of cathode pixel electrodes 711 is connected to the source or drain of the corresponding pixel driving transistor of the pixel driving circuit.

FIG. 8 is another stacked schematic diagram of a narrow frame embedded active matrix organic light emitting diode display touch structure 800 of the present invention. The main difference from FIG. 2 is that the positions of the first sensing electrode layer 240 and the second sensing electrode layer 250 are reversed. That is, the second sensing electrode layer 250 is located on a side of the second substrate 220 facing the OLED layer 230 . Preferably, the second sensing electrode layer 250 is disposed on the surface of the second substrate 220 facing the OLED layer 230 . The first sensing electrode layer 240 is located on the surface of the second sensing electrode layer 250 facing the OLED layer 230 .

It is known that the average light transmittance of electrode points made of indium tin oxide material (ITO) is only about 90%, while the M first conductor blocks 40-1, 40-2, ..., 40-M of the present utility model , the N connection lines 40-1, 40-2, ..., 40-N, and the N second conductor blocks 50-1, 50-2, ..., 50-N are arranged on the thin film transistor layer 300 The positions of the K gate driving lines and the L source driving lines are above, so the light transmittance is not affected, so the average light transmittance of the present invention is far better than that of the known technology. When the technology of the present invention is combined with the organic light emitting diode display panel, the brightness of the organic light emitting diode display panel can be made brighter than the known technology.

It can be seen from the foregoing description that the design of the known technology in FIG. 1 will increase the width of the frame of the touch panel, which is not suitable for the trend of narrow frame design. When the narrow frame touch panel structure of the present invention is combined with the organic light emitting diode display panel, the brightness of the organic light emitting diode display panel can be brighter than the known technology.

And the utility model no matter M first conductor blocks 40-1, 40-2, ..., 40-M, N second conductor blocks 50-1, 50-2, ..., 50-N, or wiring They are all made of metal, and have better and higher conductivity than the transparent conductive materials of the known technology, and are easy to transmit the induction signal of the conductor line to the control circuit, so that the coordinates calculated by the control circuit are more accurate. The utility model not only has better light transmittance than the known technology, but also avoids the use of expensive indium tin oxide material, thereby reducing the cost, and is more suitable for designing a touch panel with a narrow frame than the known technology.

The above-mentioned embodiments are only examples for convenience of description, and the scope of rights claimed by the utility model should be determined by the scope of the claims, rather than being limited to the above-mentioned embodiments.

Claims (10)

1. an embedded active-matrix organic light-emitting diode display touch-control structure for narrow frame, is characterized in that, comprising:

One first substrate;

One second substrate, an Organic Light Emitting Diode layer is folded between two substrates to be parallel-laid into right configuration by this first substrate and this second substrate;

One first induction electrode layer, is positioned at the side in the face of this Organic Light Emitting Diode layer of this second substrate, and has M bar first conductor block and N bar connecting line that are positioned at a first direction setting, and for induction touch-control, wherein, M, N are positive integer;

One second induction electrode layer, be positioned on the surface of the side in the face of this Organic Light Emitting Diode layer of this first induction electrode layer, and there is N bar second conductor block being positioned at a second direction and arranging, for induction touch-control, each second conductor block extends to a side of the embedded active-matrix organic light-emitting diode display touch-control structure of this narrow frame with i-th of a correspondence connecting line, i is positive integer and 1≤i≤N; And

One tft layer, be positioned at the surface of the side in the face of this Organic Light Emitting Diode layer of this second induction electrode layer, this tft layer has K bar raster data model line and L bar source drive line, according to a display drive signals and a display pixel signal, to drive pixel driven transistor and the pixel capacitance of corresponding pixel-driving circuit, and then perform display operation, in the middle of, K, L are positive integer;

Wherein, the position of this M bar first conductor block, this N bar connecting line and this N bar second conductor block is according to corresponding with this K bar raster data model line of this tft layer and the position of L bar source drive line and arrange.

2. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 1, it is characterized in that, wherein, each first conductor block is the same side extending to this second substrate respectively with the metal routing of correspondence, to be connected to a flexible circuit board further.

3. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 2, is characterized in that, wherein, this N bar connecting line is made by conductive metal material.

4. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 3, is characterized in that, wherein, each conductor block of this M bar first conductor block and this N bar second conductor block is made up of many strip metals line of induction.

5. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 4, it is characterized in that, wherein, this many strip metals line of induction of each conductor block of this M bar first conductor block and this N bar second conductor block forms four type regions, limit, the metal line of induction in each four type region, limit is electrically connected together, and does not connect between any two type regions, four limits.

6. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 5, is characterized in that, wherein, this first direction is vertical second direction.

7. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 6, is characterized in that, wherein, each connecting line of this N bar connecting line is arranged between two the first conductor block.

8. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 7, is characterized in that, wherein, this type region, four limits be following shape one of them: rectangle, square.

9. the embedded active-matrix organic light-emitting diode display touch-control structure of narrow frame as claimed in claim 8, it is characterized in that, wherein, each conductor block of this M bar first conductor block and this N bar second conductor block formed by many strip metals line of induction, and this many strip metals line of induction is made by the metal material conducted electricity or alloy material.

10. an embedded active-matrix organic light-emitting diode display touch-control structure for narrow frame, is characterized in that, comprising:

One first substrate;

One second substrate, an Organic Light Emitting Diode layer is folded between two substrates to be parallel-laid into right configuration by this first substrate and this second substrate;

One second induction electrode layer, be positioned at the side in the face of this Organic Light Emitting Diode layer of this second substrate, and there is N bar second conductor block being positioned at a second direction and arranging, for induction touch-control, each second conductor block extends to a side of the embedded active-matrix organic light-emitting diode display touch-control structure of this narrow frame with one i-th of a correspondence connecting line, i is positive integer and 1≤i≤N;

One first induction electrode layer, be positioned on the surface of the side in the face of this Organic Light Emitting Diode layer of this second induction electrode layer, and there is M bar first conductor block and N bar connecting line that are positioned at a first direction setting, for induction touch-control, wherein, M, N are positive integer; And

One tft layer, be positioned at the surface of the side in the face of this Organic Light Emitting Diode layer of this first induction electrode layer, this tft layer has K bar raster data model line and L bar source drive line, according to a display drive signals and a display pixel signal, to drive pixel driven transistor and the pixel capacitance of corresponding pixel-driving circuit, and then perform display operation, in the middle of, K, L are positive integer;

Wherein, the position of this M bar first conductor block, this N bar connecting line and this N bar second conductor block is according to corresponding with this K bar raster data model line of this tft layer and the position of L bar source drive line and arrange.