CN204129384U - The substrate heating equipment of mechanism is tilted with anti-substrate - Google Patents
The substrate heating equipment of mechanism is tilted with anti-substrate Download PDFInfo
- Publication number
- CN204129384U CN204129384U CN201420503008.5U CN201420503008U CN204129384U CN 204129384 U CN204129384 U CN 204129384U CN 201420503008 U CN201420503008 U CN 201420503008U CN 204129384 U CN204129384 U CN 204129384U
- Authority
- CN
- China
- Prior art keywords
- substrate
- female
- tft substrate
- hot plate
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 224
- 238000010438 heat treatment Methods 0.000 title claims abstract description 52
- 230000007246 mechanism Effects 0.000 title claims abstract description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 37
- 230000008569 process Effects 0.000 abstract description 28
- 230000010287 polarization Effects 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 64
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Tilt a substrate heating equipment for mechanism with anti-substrate, the rear heating process after the Ultraviolet radiation in light orientation process, rise to set point of temperature at chien shih substrate in short-term and evenly rise in substrate entire scope, maintain orientation restraint.Linear polarization ultraviolet is irradiated to the female TFT substrate (30) or female counter substrate (30) (being denoted as substrate) that are coated with alignment films later, gives uniaxiality to alignment films.Thereafter, at hot plate (20) this substrate of upper mounting (30), pushpin (10) is utilized to be pressed against on hot plate (20) by the periphery of substrate (30).Thereby, it is possible to prevent the tilting of the substrate (30) when heating, temperature can be made to rise to about 240 DEG C from 26 DEG C with about 30 seconds equably in substrate (30) entirety.Thereby, it is possible to obtain the liquid crystal indicator with the high optical alignment film of orientation restraint.
Description
Technical field
The utility model relates to liquid crystal indicator, particularly relates to manufacture method and the manufacturing installation thereof of the liquid crystal indicator with the aligned alignment films of light.
Background technology
The display panels that liquid crystal indicator uses, be configured with TFT substrate and counter substrate, be formed in the rectangular pixel with pixel electrode and thin film transistor (TFT) (TFT) etc. in described TFT substrate, described counter substrate is relative with TFT substrate, be formed with chromatic filter etc. at the position corresponding with the pixel electrode of TFT substrate, between TFT substrate and counter substrate, be clamped with liquid crystal.Further, image is formed by the light transmission rate according to pixels controlled based on liquid crystal molecule.
In liquid crystal indicator, the initial orientation of liquid crystal molecule is carried out by the alignment films be formed in TFT substrate and counter substrate, by applying picture signal to pixel electrode, utilize thus and be formed at electric field between pixel electrode and opposite electrode the state of the initial orientation of this liquid crystal molecule change, thus the light quantity of control permeate LCD panel.The initial orientation of liquid crystal molecule directed through carrying out friction treatment to alignment films or light orientation process specifies.
The problem etc. of the insulation damages between the pollution that the friction treatment of alignment films has goods caused by the chip of the alignment films caused that rubs or manufacturing process, the wiring that caused by electrostatic generation etc.Light is aligned can alleviate the generation of above-mentioned chip, the problem of electrostatic generation, but is difficult to form so-called tilt angle in alignment films.
On the other hand, in liquid crystal indicator, field angle characteristic becomes problem.During when field angle characteristic refers to and to observe picture from front with from oblique observation picture, briliancy occurs or the phenomenon that changes of colourity.About field angle characteristic, the IPS of liquid crystal molecule action (In Plane Switching) mode is made to have excellent field angle characteristic at the electric field by horizontal direction.In IPS, alignment films does not need so-called tilt angle, is therefore suitable for the light orientation process of alignment films.
Following formation is described: heat after polarisation ultraviolet is irradiated to the Polyamic Acid Film as alignment films, polyamic acid is converted to polyimide, form the alignment films with oriented anisotropic thus in " patent documentation 1 ".In " patent documentation 2 ", describe following formation: in light orientation process, heat and polarisation ultraviolet is irradiated to alignment films, give oriented anisotropic to alignment films thus.That is, following formation is described: make the temperature of heating in polarisation Ultraviolet radiation, be divided into initial stage, mid-term, change to the later stage.By improving with making temperature step, thus the strand be separated because polarisation irradiates is suppressed to be cross-linked before configuring again.
Patent documentation 1: Japanese Unexamined Patent Publication 2003-255349 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2007-226097 publication
Utility model content
Fig. 6 is the cut-open view of the liquid crystal indicator of IPS mode.There is the liquid crystal indicator of various IPS mode, Fig. 6 be wherein one example, the utility model also goes for the liquid crystal indicator of other IPS modes.In figure 6, be formed with the gate electrode 101 doubled as sweep trace in the TFT substrate 100 formed by glass, be formed with gate insulating film 102 thereon.On gate insulating film 102, be formed with semiconductor layer 103, on semiconductor layer 103, be formed with drain electrode 104 and source electrode 105, thus form TFT.Cover TFT ground and form the inorganic passivating film 106 be made up of SiN etc., on inorganic passivating film 106, form the organic passivation film 107 doubled as planar film.
On organic passivation film 107, be formed with the opposite electrode 108 formed by ITO in the mode of planar solid.On opposite electrode 108, be formed with interlayer dielectric 109, on interlayer dielectric 109, be formed with the pixel electrode 110 of the comb teeth-shaped formed by transparency electrode.Pixel electrode 110 is connected with source electrode 105 via through hole 111, receives picture signal.On pixel electrode 110, be formed with alignment films 113, alignment films 113 is subject to orientation process by light orientation.
In figure 6, the counter substrate 200 formed by glass is formed with black matrix 202 and chromatic filter 201, is formed with protection the outer of chromatic filter thereon and covers (overcoat) film 203.Form alignment films 113 on overlay film 203 outside, alignment films 113 is subject to orientation process by light orientation.Liquid crystal layer 300 is clamped with between TFT substrate 100 and counter substrate 200.
In the TFT substrate 100 of Fig. 6, when applying the voltage based on picture signal to the pixel electrode 110 of comb teeth-shaped, line of electric force is produced towards opposite electrode 108 ground through the slit 112 comb and comb, rotate by making liquid crystal molecule 301, control the light from backlight by liquid crystal layer 300 thus, thus form image.The initial orientation of liquid crystal molecule 301 is specified by alignment films 113.TFT substrate 100 side and counter substrate 200 side of the alignment films 113 of Fig. 6 have all been implemented light orientation process.
Illustrated by aftermentioned, light orientation process is by irradiating the ultraviolet of linear polarization to polyimide film thus giving uniaxiality to alignment films.Thereafter, heat, make low molecular analyte volatilize thus, and impel the rotation of generated oligomer and improve orientation restraint.
This heating process used the heating arrangement of far infrared mode, hot air circulation mode etc. in the past.But, this based in the type of heating of conventional art, make substrate from room temperature that is 26 DEG C rise to required temperature that is 240 DEG C need time of more than 2 minutes.But, in past case, irradiate the heat time after linear polarization ultraviolet not fully, need the further heat time.
Problem of the present utility model is to provide a kind of by making substrate rise to set point of temperature in the short time, obtains the manufacture method with the liquid crystal indicator of the optical alignment film of regulation orientation restraint thus.In addition, another problem of the present utility model is to obtain following manufacturing installation: can carry out heating equably as representated by the heating process in light orientation process, to glass substrate and being heated to about 240 DEG C in the short time.
The utility model is made for solving above-mentioned problem, and concrete means are as follows.
(1) manufacture method of liquid crystal indicator, mother substrate is separated and manufactures each liquid crystal indicator, described mother substrate is that the female TFT substrate being formed with multiple TFT substrate and female counter substrate of being formed with multiple counter substrate is bonding and formed at periphery, wherein, to described female TFT substrate or described female counter substrate coating alignment films, described alignment films is irradiated to the ultraviolet of linear polarization, thereafter, implement the light orientation process with rear heating process, in described rear heating process, described female TFT substrate or described female counter substrate are positioned on hot plate, pushpin is utilized to press the neighboring area of described female TFT substrate or described female counter substrate while heat.
(2) in the manufacture method of the liquid crystal indicator described in above-mentioned (1), in described smooth orientation process, have before carrying out described linear polarization Ultraviolet radiation, described alignment films heating is carried out to the heating process of imidization, in the heating process of described imidization, be positioned on hot plate by described female TFT substrate or described female counter substrate, the neighboring area utilizing pushpin to press described female TFT substrate or described female counter substrate is heated.
(3) manufacture method of liquid crystal indicator, mother substrate is separated and manufactures each liquid crystal indicator, described mother substrate is that the female TFT substrate being formed with multiple TFT substrate and female counter substrate of being formed with multiple counter substrate is bonding and formed at periphery, wherein, have described female TFT substrate or described female counter substrate coating alignment films, and heat described alignment films and carry out the operation of imidization, in the operation of described imidization, described female TFT substrate or described female counter substrate are positioned on hot plate, pushpin is utilized to press the neighboring area of described female TFT substrate or described female counter substrate while heat, thereafter, by friction treatment to the process of described alignment films implementation orientation.
(4) manufacturing installation of liquid crystal indicator, mother substrate is separated and manufactures each liquid crystal indicator, described mother substrate is that the female TFT substrate being formed with multiple TFT substrate and female counter substrate of being formed with multiple counter substrate is bonding and formed at periphery, wherein, comprise heating arrangement, this heating arrangement has: mounting is coated with described female TFT substrate of alignment films or the hot plate of described female counter substrate; The neighboring area of the described female TFT substrate be placed on described hot plate or described female counter substrate is pressed against the pushpin in described hot plate face.
According to the utility model, female TFT substrate that can make to be formed with multiple TFT substrate or the female counter substrate being formed with multiple counter substrate rise to the high temperature of about 240 DEG C in the short time, therefore, especially in the liquid crystal indicator with the alignment films after by light orientation process, the orientation restraint of alignment films can be improved.
In addition, according to heating arrangement of the present utility model, can to large-scale female TFT substrate or female counter substrate in short time heating and to the overall homogeneous heating of substrate, therefore, it is possible to improve the yield rate that have employed the liquid crystal indicator of light orientation process.
And, according to heating arrangement of the present utility model, for in the heating of the imidization of alignment films in the liquid crystal indicator employing friction treatment, can to female TFT substrate or female counter substrate in short time heating and throughout substrate integrally homogeneous heating, therefore, it is possible to seek the manufacture efficiency and the fabrication yield that improve liquid crystal indicator.
And, in the manufacturing process of liquid crystal indicator, be not only the formation of alignment films, heat in the operation of female TFT substrate or female counter substrate needing the short time and be suitable for the utility model, also can seek the efficiency and the fabrication yield that improve liquid crystal indicator.
Accompanying drawing explanation
Fig. 1 is the stereographic map of female TFT substrate heating arrangement of the present utility model.
Fig. 2 is the vertical view of female TFT substrate.
(a), (b) of Fig. 3 is vertical view and the side view of hot plate.
Fig. 4 is the cut-open view representing relation between pushpin of the present utility model, pressing plate, female TFT substrate.
Fig. 5 is the process chart of base plate heating of the present utility model.
Fig. 6 is the cut-open view of IPS mode liquid crystal indicator.
Fig. 7 is the process chart of light orientation process.
Fig. 8 is the stereographic map of the problem points of the base plate heating indicated without use hot plate during pushpin.
The explanation of Reference numeral
10 ... pushpin, 11 ... pressing plate, 12 ... start cylinder, 13 ... spring, 20 ... hot plate, 21 ... sheet metal, 22 ... well heater, 30 ... female TFT substrate, 31 ... TFT substrate, 32 ... neighboring area, 211 ... Ni coating 100 ... TFT substrate, 101 ... gate electrode, 102 ... gate insulating film, 103 ... semiconductor layer, 104 ... source electrode, 105 ... drain electrode, 106 ... inorganic passivating film, 107 ... organic passivation film, 108 ... opposite electrode, 109 ... interlayer dielectric, 110 ... pixel electrode, 111 ... through hole, 112 ... slit, 113 ... alignment films, 200 ... counter substrate, 201 ... chromatic filter, 202 ... black matrix, 203 ... outer overlay film, 300 ... liquid crystal layer, 301 ... liquid crystal molecule
Embodiment
Before embodiment, the light orientation process of the liquid crystal indicator with especially effective optical alignment film is described in the utility model.Fig. 7 is the example of light orientation process technique.Alignment films is formed at both TFT substrate and counter substrate, and the light orientation process technique shown in Fig. 7 is all shared to TFT substrate, counter substrate.
In the figure 7, if TFT substrate, then the substrate being formed into pixel electrode 110 shown in Fig. 6 is cleaned.In addition, if counter substrate, then the substrate being formed into outer overlay film 203 shown in Fig. 7 is cleaned.For TFT substrate or counter substrate, wait coating alignment films by printing.Printing uses hectographic printing.As the method beyond printing, ink-jet, spin coating, spraying etc. can be used.As aligning film material, use polyamic acid or poly amic acid ester etc.
The substrate printing alignment films is dropped in leveling (leveling) stove, flattens while making alignment films drying, make the surface planarisation of alignment films.Thereafter, substrate is dropped into sintering furnace, make temperature rise to about 240 DEG C, make aligning film material imidization, form polyimide film.
Wrinkling, to the alignment films after polyimide, the ultraviolet that illumination wavelength has been the linear polarization of about 240nm ~ 400nm.By this ultraviolet irradiation, on the direction consistent with the direction of the ultraviolet electric field intensity of polarisation, the main chain in the macromolecule in alignment films is cut off, and gives uniaxiality thus.
By utilizing polarisation Ultraviolet radiation to cut off polymkeric substance, generate volatile lower-molecular substance.Volatilize to make this lower-molecular substance, be removed, by base plate heating to about 240 DEG C.This heating is called rear heating.In addition, because Ultraviolet radiation also forms oligomer, but low molecule evaporation in this oligomer, then rearrange, there is the effect improving orientation restraint.Thereafter, substrate is placed cooling.
Therefore, outbalance is heated for after orientation restraint.But, in order to ensure high orientation restraint, need the substrate temperature carrying out rear heating at short notice to rise.Such as, need less than 1 minute time chien shih substrate temperature rise to 240 DEG C from 26 DEG C.Such as, but in the heating means of in the past such infrared-type or heated air circulation type etc., the warming temperature of substrate cannot shift to an earlier date, and the temperature of substrate be made to rise to 240 DEG C from 26 DEG C, needs the time of more than 2 minutes.There is the problem that the orientation restraint after light orientation reduces in the programming rate of this degree.
In the utility model, in order to make substrate temperature rise to about 240 DEG C in the short time, by substrate-placing at hot plate, utilize the heating of hot plate, chien shih substrate in short-term temperature from room temperature that is 26 DEG C rise to about 240 DEG C.On the other hand, light orientation process be be formed many TFT substrate female TFT substrate or be formed many counter substrate female counter substrate state under carry out.The size of female TFT substrate or female counter substrate is large, only simply female TFT substrate or female counter substrate are placed in words hot plate carrying out heat, as shown in Figure 8, produce in female TFT substrate 30 or female counter substrate and tilt, the temperature of the TFT substrate or counter substrate that are especially formed at bight does not fully rise, and produces in the insufficient problem of the liquid crystal cells orientation restraint of this part.
Fig. 8 is the schematic diagram representing this problem.In fig. 8, hot plate 20 is placed with female counter substrate or female TFT substrate 30.Along with substrate 30 is heated, produce at substrate 30 due to thermal expansion difference and tilt.As shown in Figure 8, this tilting is especially remarkable in the bight of substrate.Therefore, the TFT substrate existed in the bight of female TFT substrate 30 or female counter substrate or the orientation restraint of counter substrate insufficient, the reason that the fabrication yield becoming liquid crystal indicator reduces.
The utility model according to following embodiment, can utilize hot plate to female TFT substrate 30 or female counter substrate homogeneous heating and rise in chien shih temperature in short-term.
[embodiment 1]
Fig. 1 is the stereographic map of substrate heating equipment of the present utility model.In FIG, female TFT substrate 30 is positioned on hot plate 20.In addition, light orientation process is identical for female TFT substrate 30 and female counter substrate, is therefore described female TFT substrate 30, is also same when female counter substrate.Fig. 2 is the vertical view of female TFT substrate 30.Be formed with many TFT substrate 31 in female TFT substrate 30, the major diameter XL of female TFT substrate 30 is such as 920mm, minor axis YL is such as 730mm.In order to the sealing area etc. that the female counter substrate formed with make in addition is bonding, guarantee the neighboring area 32 with or without TFT substrate 31 at the periphery of female TFT substrate 30.The D1 of neighboring area 32 is about 20mm.
Female TFT substrate 30 is like this placed on hot plate 20.Fig. 3 (a) is the vertical view of hot plate 20, and Fig. 3 (b) is the side view of hot plate 20.In Fig. 3 (a), the major diameter XHL of hot plate 20 is about 1020mm, and minor axis YHL is about 830mm.This size is the size corresponding with the female TFT substrate 30 shown in Fig. 2.In Fig. 3 (a), the part shown in dotted line loads female TFT substrate 30.
Be formed for by the vent port 25 of female TFT substrate 30 vacuum suction on hot plate 20 at hot plate 20 with rectangular.Fig. 3 (b) is the side view of hot plate 20, and hot plate 20 is formed by sheet metal 21 and the well heater 22 be configured under sheet metal.The integral thickness T of hot plate 20 is about 20mm.Sheet metal 21 is formed by Al or stainless steel etc.In Fig. 3 (b), the vent port 25 for the female TFT substrate 30 of vacuum suction is formed with running through sheet metal and well heater.Ni coating 211 is formed in the glass substrate side of hot plate 20.
Sheet metal 20 is placed with the female TFT substrate 30 shown in dotted line.When loading female TFT substrate 30, being vented from the vent port 25 being formed at hot plate 20, attracting female TFT substrate 30, making female TFT substrate 30 be close to hot plate 20.But when female TFT substrate 30 is placed in hot plate 20, expanding in hot plate 20 side of female TFT substrate 30, thus as shown in Figure 8, especially tilts in the bight of female TFT substrate 30.For this tilting, the absorption affinity only with the vacuum suction shown in Fig. 3 cannot suppress.So the temperature being configured at the TFT substrate in the bight of female TFT substrate 30 cannot fully rise, there is the problem that the orientation restraint of the alignment films of the TFT substrate of this part is insufficient.
As shown in Figure 1, the utility model utilizes pushpin 10 to press the neighboring area of female TFT substrate 30, prevents the tilting of substrate 30 thus.Pushpin 10 is installed on pressing plate 11.Pressing plate 11 is such as formed by stainless steel.Pressing plate 11 is connected with start cylinder 12, the knee-action by start cylinder 12.Pushpin 10 is inserted in the recess formed at pressing plate 11, forms the structure 13 of spring-like, female TFT substrate 30 can be pressed on hot plate 20 with uniform power between the recess and pushpin 10 of pressing plate 11.
That is, with the total power of the power of the weight of pressing plate 11 and start cylinder, female TFT substrate 30 is pressed on hot plate 20 equably.Pushpin 10 is formed by heat-resistant resins such as polyimide.About the quantity of pushpin 10, respectively configure about 10 on each limit of female TFT substrate 30.
About the diameter phi of the pushpin 10 shown in Fig. 4, even in the edge of female TFT substrate 30, become large in the bight of female TFT substrate 30.Because the diameter of pushpin 10 is thicker, correspondingly press the spring force change of female TFT substrate 30 greatly by pushpin 10.This is because, the tilting produced in female TFT substrate by heating, also maximum in bight.In addition, pushpin is configured to press the region of the viewing area of the TFT substrate avoiding the liquid crystal indicator be formed in female TFT substrate.Can need to be staggered in the position of pin according to the picture dimension of liquid crystal indicator, therefore can have the mechanism of the position changing pushpin.
Fig. 5 is the process chart utilizing hot plate to heat female TFT substrate.In Figure 5, female TFT substrate is carried by the arm Shangdi being placed in transfer robot, is placed on hot plate.Now, accept pin and rise from hot plate, accept female TFT substrate, when keeping out of the way in hot plate when accepting pin to decline, female TFT substrate is placed on hot plate.Now, be exhausted from the vent port of hot plate, by female TFT substrate vacuum suction on hot plate.
In addition, while female TFT substrate is placed on hot plate, pushpin contacts with the neighboring area of female TFT substrate, utilizes specified force female TFT substrate to be pressed against on hot plate.Thus, female TFT substrate of about 26 DEG C is rising to about 240 less than 1 minute (about 30 seconds) originally.Neighboring area due to female TFT substrate is pressed pin pressing, even if so temperature rises, female TFT substrate and hot plate are close to, and the TFT substrate being formed at periphery or bight also can rise to set point of temperature in the short time identically with other parts.
When female TFT substrate rise to set point of temperature that is 240 DEG C when, make pushpin increase, meanwhile, accept pin from hot plate rise, female TFT substrate is unloaded from hot plate.Utilize the arm of transfer robot to accept the female TFT substrate being placed in and accepting pin and rising, female TFT substrate is transported to subsequent processing.
In heating process, the temperature of female TFT substrate needs to be limited in specialized range relative to set point of temperature.In the rear heating of light orientation, about needing to be limited in set point of temperature ± 5 DEG C.That is, add after light orientation and hanker being 240 ± 5 DEG C.In light orientation, the reason being restricted to such temperature range is as follows.That is, if temperature is too high, then can make first to be formed at the organic film sex change of the organic passivation film of TFT substrate etc., or make the chromatic filter distortion being formed at female counter substrate.And if temperature is too low, then cannot obtain sufficient orientation restraint.
According to the utility model, also can form the temperature curve same with the TFT substrate in other regions to the TFT substrate of the adjacent corner of female TFT substrate, the TFT substrate in female TFT substrate entirety with uniform properties can be obtained.
Be explained above female TFT substrate, for there is female counter substrate of optical alignment film too.And, although the utility model especially has effect in the rear heating process of light orientation process, but when other, the heating for imidization before the linear polarization ultraviolet irradiation of light orientation process or linear polarization ultraviolet irradiation time heat, be applicable to this heating process too.In these heating processes, can realize can between short-term by base plate heating to set point of temperature and to overall this advantage of the present utility model of homogeneous heating of substrate.
And, carry out in the technique of orientation process in use rubbing manipulation to alignment films, have and be coated with alignment films and the process making the alignment films imidization of this coating, in this imidization process, also can use the heating means of female TFT substrate of the present utility model or female counter substrate.In this case, can realize can between short-term by base plate heating to set point of temperature and to overall this advantage of the present utility model of homogeneous heating of substrate.
Claims (3)
1. the substrate heating equipment of a band anti-substrate tilting mechanism, manufacture in the manufacture of the liquid crystal indicator of each liquid crystal indicator mother substrate is separated and use, described mother substrate is that the female TFT substrate being formed with multiple TFT substrate and the female counter substrate being formed with multiple counter substrate is bonding and formed at periphery, it is characterized in that, the substrate heating equipment that the anti-substrate of described band tilts mechanism comprises:
Hot plate, its mounting is coated with described female TFT substrate of alignment films or described female counter substrate;
Pushpin, the neighboring area of the described female TFT substrate be placed on described hot plate or described female counter substrate is pressed against described hot plate by it.
2. the anti-substrate of band according to claim 1 tilts the substrate heating equipment of mechanism, it is characterized in that,
Described hot plate have for by described female TFT substrate or described female counter substrate vacuum suction in the vent port of described hot plate.
3. the anti-substrate of band according to claim 1 tilts the substrate heating equipment of mechanism, it is characterized in that,
Described pushpin is configured on pressing plate, between described pressing plate and described pushpin, be formed with spring device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-183794 | 2013-09-05 | ||
| JP2013183794A JP2015052627A (en) | 2013-09-05 | 2013-09-05 | Manufacturing method and manufacturing device of liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204129384U true CN204129384U (en) | 2015-01-28 |
Family
ID=52385727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420503008.5U Expired - Lifetime CN204129384U (en) | 2013-09-05 | 2014-09-02 | The substrate heating equipment of mechanism is tilted with anti-substrate |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2015052627A (en) |
| CN (1) | CN204129384U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109917588A (en) * | 2019-03-21 | 2019-06-21 | 深圳市华星光电技术有限公司 | Orientation ultraviolet irradiation machine |
| CN114967003A (en) * | 2022-05-27 | 2022-08-30 | 武汉光迅科技股份有限公司 | 800G optical device and production method thereof |
| CN114994838A (en) * | 2022-05-27 | 2022-09-02 | 武汉光迅科技股份有限公司 | High-speed optical transceiver module integrating transceiving |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018106019A (en) * | 2016-12-27 | 2018-07-05 | 三菱電機株式会社 | Transport device, optical alignment processing apparatus and optical alignment film formation system |
-
2013
- 2013-09-05 JP JP2013183794A patent/JP2015052627A/en active Pending
-
2014
- 2014-09-02 CN CN201420503008.5U patent/CN204129384U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109917588A (en) * | 2019-03-21 | 2019-06-21 | 深圳市华星光电技术有限公司 | Orientation ultraviolet irradiation machine |
| CN114967003A (en) * | 2022-05-27 | 2022-08-30 | 武汉光迅科技股份有限公司 | 800G optical device and production method thereof |
| CN114994838A (en) * | 2022-05-27 | 2022-09-02 | 武汉光迅科技股份有限公司 | High-speed optical transceiver module integrating transceiving |
| CN114967003B (en) * | 2022-05-27 | 2024-02-23 | 武汉光迅科技股份有限公司 | Deformation-free packaging system suitable for 800G optical device |
| CN114994838B (en) * | 2022-05-27 | 2024-02-23 | 武汉光迅科技股份有限公司 | Deformation-free packaging system suitable for high-speed optical transceiver component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015052627A (en) | 2015-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204129384U (en) | The substrate heating equipment of mechanism is tilted with anti-substrate | |
| US7972192B2 (en) | Curing device and manufacturing method for liquid crystal display | |
| CN104238194B (en) | Display panel and manufacturing method thereof | |
| US20120124857A1 (en) | Alignment film drying device and drying method | |
| US20110183279A1 (en) | Substrate heating apparatus, substrate heating method and substrate processing system | |
| US20130233848A1 (en) | High frequency heating apparatus | |
| CN1645575A (en) | Light irradiation heat treatment method and light irradiation heat treatment apparatus | |
| JPH10123531A (en) | Pretilt control method for liquid crystal cell | |
| US20170287747A1 (en) | Substrate Heating Device And Substrate Heating Method | |
| JP6541885B2 (en) | Method of manufacturing display panel and liquid crystal display device | |
| KR100738810B1 (en) | apparatus for forming photo alignment film and method thereof | |
| US6563560B2 (en) | Apparatus and method of producing alignment layer for liquid crystal display | |
| JP3729952B2 (en) | Method for manufacturing reflective display device | |
| US20160227612A1 (en) | Microwave assisted parallel plate e-field applicator | |
| US8673545B2 (en) | Method for manufacturing liquid crystal display device | |
| US9803921B2 (en) | Alignment film drying system and a method for drying alignment films | |
| US9907124B2 (en) | Device for curing alignment film and method using the same | |
| US9785014B2 (en) | Manufacturing method and manufacturing apparatus of liquid crystal display device | |
| US20130233847A1 (en) | High frequency heating apparatus | |
| KR101213889B1 (en) | Alignment layer forming system for Liquid Crystal Display device and the operating method | |
| CN104932150A (en) | Light alignment film postbaking treatment device and light alignment film postbaking treatment method | |
| CN215067651U (en) | Liquid crystal lens, optical device, light modulation device, and imaging apparatus | |
| JP2002221394A (en) | Heating device for electronic component | |
| JP2000227595A (en) | Production of liquid crystal display device | |
| JP4963371B2 (en) | Vapor deposition apparatus, vapor deposition method, and inorganic alignment film forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150128 |
|
| CX01 | Expiry of patent term |