CN204119269U - A kind of gigabit switch - Google Patents
A kind of gigabit switch Download PDFInfo
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- CN204119269U CN204119269U CN201420615403.2U CN201420615403U CN204119269U CN 204119269 U CN204119269 U CN 204119269U CN 201420615403 U CN201420615403 U CN 201420615403U CN 204119269 U CN204119269 U CN 204119269U
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Abstract
The utility model relates to a kind of gigabit switch, particularly a kind ofly relates to anti-lightning strike gigabit switch.A kind of gigabit switch of the present utility model, comprising: casing and exchange control system, ethernet PHY module, interface module, coupler, power module and the electric mouth protection module be located in casing; Gigabit switch of the present utility model is by adding electric mouth protection module, serial ports protection module, power source protective module respectively at electric mouth, serial ports, power module; improve the anti-lightning strike grade of switch; protection switch is not by thunderbolt interference or damage, and improves network stabilization while reducing operator's maintenance cost.
Description
Technical field
The utility model relates to a kind of gigabit switch, particularly a kind ofly relates to anti-lightning strike gigabit switch.
Background technology
Along with the requirement of user to network broadband speed and stability is more and more higher, there is following shortcoming in existing passageway exchange board: 1, mostly only have two ports for up cascade, cascade port number is on the low side; 2, FPDP, serial ports, the protective capacities such as power supply are not strong, run into the adverse circumstances such as thunderbolt, electrostatic, heavy showers and easily damage.Especially the damage that produces of being struck by lightning is more frequent, causes user network unstable, causes the difficult and maintenance pressure of huge operation to operator.In order to improve the anti-lightning ability of switch; prior art adds some protective circuits to improve the anti-lightning ability of switch at switch; self adaptation Ethernet as patent CN 203445901 U reinforces switch; at rc protection circuit of connecting between magnetic module with output network interface, lightning strike protection is carried out to switch; but this simple circuit form using series connection rc protection circuit to carry out energy absorption; when voltage or electric current excessive time electric capacity can be caused to puncture, effectively can not protect switch.
Utility model content
For above-mentioned prior art, the technical problem that the utility model solves is to provide a kind of gigabit switch.The all FPDP of this switch are gigabit, increase the port number being used for up cascade.Substantially increase the flexibility of operator according to the networking of different bandwidth demand.Electricity mouth, serial ports, power module add high-grade anti-lightning strike scheme respectively, switch can be protected not by thunderbolt interference or damage, improve network stabilization while reducing operator's maintenance cost.
For solving the problem, gigabit switch of the present utility model, casing and exchange control system, ethernet PHY module, interface module, coupler, power module and the electric mouth protection module be located in casing.
Described exchange control system comprises the flash memory exchanging control chip, the synchronous DRAM be connected with exchange control chip and be connected with exchange control chip;
Described ethernet PHY module is connected with described exchange control chip, and described ethernet PHY module is made up of two groups of ethernet PHY chips; First group of ethernet PHY chip externally carries power supply port, is connected with the electric mouth in interface module by coupler; Second group of ethernet PHY chip externally provides light mouth, is connected with the light mouth in interface module;
Described coupler is the tapped four port orientations couplers of band;
The input of described power module is connected with the output of three phase mains; The output of described power module is connected, for described gigabit switch is powered with exchange control chip;
Described electric mouth protection module is made up of gas discharge diode and transient voltage protect IC; One pole of described gas discharge diode is connected with the centre tap of described coupler electric mouth side in interface module, another pole ground connection of described gas discharge diode; Described transient voltage protect IC is connected to described coupler one end near first group of ethernet PHY chip.
As further improvement of the utility model, described gigabit switch increases logic control chip and indicating module; Described logic control chip is connected with exchange control chip; Described indicating module andlogic control chip is connected; Described exchange control chip is controlled by the instruction of logic control chip to indicating module.
As further improvement of the utility model, described gigabit switch increases level transferring chip; Described level transferring chip is connected with exchange control chip, externally provides serial ports by level transferring chip.
As further improvement of the utility model, described serial ports increases serial ports protection module; Described serial ports protection module comprises gas discharge tube triode, the first Transient Suppression Diode group, the second Transient Suppression Diode, the first thermistor and the second thermistor;
The two poles of the earth of described gas discharge tube triode connect the receipts signal end of serial ports and the end that signals, a pole ground connection respectively;
The first described thermistor and the second thermistor are connected on the receipts signal end of serial ports respectively and signal on end;
The first described Transient Suppression Diode group is connected in parallel on the receipts signal end of serial ports and signals on end; The first described Transient Suppression Diode group is in series by two Transient Suppression Diodes, its series connection node ground connection;
The second described transient voltage suppressor paralleling is on the receipts signal end and signalling end of serial ports.
As further improvement of the utility model, described power module comprises the secondary power supply of primary power source and multiple different magnitude of voltage; The input of described primary power source is connected with the output of three phase mains, and exporting can for the DC power supply of gigabit switch work; The secondary power supply of described different magnitudes of voltage is produced by DC-to-DC conversion regime by the output of primary power source.
As further improvement of the utility model, described power module increases power source protective module; Described power source protective module is serially connected between the output of three phase mains and the input of power module; Described power source protective module comprises fuse, piezo-resistance group, gas discharge diode, electromagnetic interface filter and bridge rectifier;
Described fuse is connected on the live wire of three phase mains;
Described piezo-resistance group is connected in parallel between the live wire of three phase mains and the zero line of three phase mains; Described piezo-resistance group is made up of the first piezo-resistance group and the second piezo-resistance parallel connection; The first described piezo-resistance group is in series by two piezo-resistances;
The two poles of the earth of described gas discharge diode are connected with the ground wire of three phase mains with the series connection node of two piezo-resistances in the first piezo-resistance group respectively;
Described electromagnetic interface filter is connected in parallel between the live wire of three phase mains and the zero line of three phase mains;
Described bridge rectifier is connected in parallel between the live wire of three phase mains and the zero line of three phase mains.
As further improvement of the utility model, described exchange control chip adopts RTL8382M chip; PHY module is integrated with in described RTL8382M chip; Described PHY module externally carries power supply port.
As further improvement of the utility model, the described synchronous DRAM be connected with exchange control chip adopts DDR3 internal memory, and the chip of employing is that K4B1G0846G chip and/or described flash memory adopt W25Q128FV chip.
As further improvement of the utility model, first group of ethernet PHY chip in described ethernet PHY module adopts a slice RTL8218B chip to provide 8 100/1000BASE-T electricity mouths; By two groups of QSGMII interface swap datas between described RTL8218B chip and exchange control chip; And/or second group of ethernet PHY chip adopts two panels RTL8214FC chip to provide 2*4 1000BASE-SX light mouth; By one group of QSGMII interface swap data between described RTL8214FC chip and exchange control chip.
As further improvement of the utility model, described logic control chip adopts RTL8321 chip.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of a preferred gigabit switch of the present utility model.
Fig. 2 is electric mouth protection module of the present utility model preferred circuit figure.
Fig. 3 is serial ports protection module of the present utility model preferred circuit figure.
Fig. 4 is power source protective module of the present utility model preferred circuit figure.
Embodiment
Now with embodiment, the utility model is further illustrated by reference to the accompanying drawings.
As a preferred gigabit switch of the present utility model structured flowchart as shown in Figure 1, comprise casing and be located at exchange control system 110, ethernet PHY module 120, interface module 130, coupler 140, power module 150, logic control chip 160, indicating module 170, level transferring chip 190 in casing;
Described exchange control system 110 comprises the flash memory 1103 exchanging control chip 1101, the synchronous DRAM 1102 be connected with exchange control chip and be connected with exchange control chip; The synchronous DRAM 1102 that described exchange control chip connects adopts DDR3 internal memory, and the chip of employing is K4B1G0846G chip; Described flash memory 1103 adopts W25Q128FV chip; Described exchange control chip 1101 adopts RTL8382M chip, and this chip to be connected with the electric mouth in interface module 30 by coupler externally provides 8 100/1000BASE-T electricity mouths.
Described ethernet PHY module 120 is connected with described exchange control chip 1101, and described ethernet PHY module 120 is made up of two groups of ethernet PHY chips; First group of ethernet PHY chip externally carries power supply port, is connected with the electric mouth in interface module 30 by coupler, and second group of ethernet PHY chip externally provides light mouth to be connected with the light mouth in interface module 30; First group of ethernet PHY chip in described ethernet PHY module adopts a slice RTL8218B chip to provide 8 100/1000BASE-T electricity mouths; By two groups of QSGMII interface swap datas between described RTL8218B chip and exchange control chip; Second group of described ethernet PHY chip adopts two panels RTL8214FC chip to provide 2*4 1000BASE-SX light mouth; By one group of QSGMII interface swap data between described RTL8214FC chip and exchange control chip.
Described coupler 140 is the tapped four port orientations couplers of band;
The described input of power module 150 is connected with the output of three phase mains; The output of described power module 150 is connected to described gigabit switch with exchange control chip and powers; Described power module 150 comprises the primary power source of 3.3V and the secondary power supply of 1.5V and 1.0V; The input of the primary power source of described 3.3V is connected with the output of three phase mains, and exporting can for the DC power supply of gigabit switch work; The secondary power supply of described 1.5V and the secondary power supply of 1.0V are produced by DC-to-DC conversion regime by the output of the primary power source of 3.3V;
The input of described logic control chip 160 is connected with exchange control chip 1101; The output of described logic control chip 160 is connected with the input of indicating module 170; Described exchange control chip 1101 is controlled by the instruction of logic control chip 160 pairs of indicating modules 170; Described logic control chip 160 adopts RTL8321 chip; Described indicating module 170 adopts LED group; Described indicating module 170 has 26 LED, is respectively used to indicate power module 150, exchange control system 110, exchanges 8 electric mouths that control chip 1101 externally provides, 8 light mouths that 8 electric mouths that first group of ethernet PHY chip externally provides, second group of ethernet PHY chip externally provide.
The input of described level transferring chip 190 is connected with exchange control chip 110, and the output of described level transferring chip 90 externally provides serial ports; Described level transferring chip adopts MAX3232 chip.
As improvement of the present utility model at the electric mouth protection module 210 of the increase of described gigabit switch, serial ports protection module 220 and power source protective module 230.
A preferred embodiment of described electric mouth protection module 210 as shown in Figure 2; Described electric mouth protection module 210 is made up of gas discharge diode 2101 and transient voltage protect IC 2102; One pole of described gas discharge diode 2101 is connected with the centre tap of described coupler 140 electric mouth side in interface module 130, another pole ground connection of described gas discharge diode 2101; Described transient voltage protect IC 2102 is connected to described coupler 140 near one end of first group of ethernet PHY chip; Electric mouth in described described interface module 130 adopts RJ45 interface; Described transient voltage protect IC 2102 adopts NUP4201MR6 core, and this chip has common and different mode two kinds of safeguard functions simultaneously.
When arbitrary holding wire of mouth electric in interface module 140 is struck by lightning, can be discharged over the ground by gas discharge diode 2101 rapidly, overvoltage can be impaired to about 500V, plays the effect of common mode protection; To the overvoltage residual voltage entering first group of ethernet PHY chip side through coupler 140, transient voltage protect IC 2102 can carry out clamper restriction to it, and it is cut to safe range the most at last.
A preferred embodiment of described serial ports protection module 220 as shown in Figure 3; Described serial ports protection module 220 comprises gas discharge tube triode 2201, first Transient Suppression Diode group 2202, second Transient Suppression Diode 2203, first thermistor 2204 and the second thermistor 2205;
The two poles of the earth of described gas discharge tube triode 2201 connect the receipts signal end of serial ports and the end that signals, a pole ground connection respectively;
The first described thermistor 2204 and the second thermistor 2205 are connected on the receipts signal end of serial ports respectively and signal on end;
The first described Transient Suppression Diode group 2202 is connected in parallel on the receipts signal end of serial ports and signals on end; The first described Transient Suppression Diode group is in series by two Transient Suppression Diodes, its series connection node ground connection;
The second described Transient Suppression Diode 2203 is connected in parallel on the receipts signal end of serial ports and signals on end.
When serial ports receive new number end or serial ports send out new number the arbitrary signal of end and meet be struck by lightning time, discharged over the ground by gas discharge diode 2201, play the effect of common mode protection, if serial ports produces overvoltage between holding wire, mutually discharge by gas discharge diode 2201, play differential mode protective action; When serial ports produces overvoltage between holding wire, the resistance of the first thermistor 2204 and the second thermistor 2205 that are connected on serial ports two new number end respectively raises, and plays metering function; By gas discharge diode 2201 and the first thermistor 2204 and and the two-stage protection of the second thermistor 2205, the surge residual voltage and the energy that flow into the first Transient Suppression Diode group 2202 and the second Transient Suppression Diode 2203 significantly reduce, by the clamping action of the first Transient Suppression Diode group 2202 and the second Transient Suppression Diode 2203, output voltage is limited in safe range the most at last.
A preferred embodiment of described power source protective module 230 as shown in Figure 4; Described power source protective module 230 is serially connected between the output of three phase mains and the input of power module; Described power source protective module 230 comprises fuse 2301, piezo-resistance group 2302, gas discharge diode 2303, electromagnetic interface filter 2304 and bridge rectifier 2305;
Described fuse series connection 2301 is on the live wire of three phase mains;
Described piezo-resistance group 2302 is connected in parallel between the live wire of three phase mains and the zero line of three phase mains; Described piezo-resistance group 2302 is made up of the first piezo-resistance group 23021 and the second piezo-resistance 23022 parallel connection; The first described piezo-resistance group 23021 is in series by two piezo-resistances;
The two poles of the earth of described gas discharge diode 2303 are connected with the ground wire of three phase mains with the series connection node of two piezo-resistances in the first piezo-resistance group 23021 respectively;
Described electromagnetic interface filter 2304 is connected in parallel between the live wire of three phase mains and the zero line of three phase mains;
Described bridge rectifier 2305 is connected in parallel between the live wire of three phase mains and the zero line of three phase mains.
Power source protective module 230 of the present utility model is designed with three grades of protection altogether.On the live wire of three phase mains, inline fuse 2301 is as first order protection, and when there being continuation overcurrent to produce, fuse 2301 can quick fuse, and protection power source module 150 is not burned.The junction capacitance of gas discharge diode is little, and the leakage current therefore produced is very little, but the shortcomings such as the gas discharge diode reaction time is slow, electric discharge time of afterflow length, aging rear easy generation short circuit; Piezo-resistance reaction time compared with gas discharge diode is short, the aging phenomenon that can not be short-circuited, but the junction capacitance of piezo-resistance is very large, and the leakage current of generation is larger; Therefore the circuit that the utility model uses piezo-resistance group 2302 and gas discharge diode 2303 to combine can solve the problem of the comparatively large and aging short circuit of gas discharge diode of piezo-resistance leakage current simultaneously.
The all FPDP of switch of the present utility model are gigabit, increase the port number being used for up cascade.Substantially increase the flexibility of operator according to the networking of different bandwidth demand.Electricity mouth, serial ports, power module add electric mouth protection module, serial ports protection module, power source protective module respectively; improve the anti-lightning strike grade of switch; protection switch is not by thunderbolt interference or damage, and improves network stabilization while reducing operator's maintenance cost.
Although specifically show in conjunction with preferred embodiment and describe the utility model; but those skilled in the art should be understood that; not departing from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (10)
1. a gigabit switch, comprising: casing and exchange control system, ethernet PHY module, interface module, coupler, power module and the electric mouth protection module be located in casing;
Described exchange control system comprises the flash memory exchanging control chip, the synchronous DRAM be connected with exchange control chip and be connected with exchange control chip;
Described ethernet PHY module is connected with described exchange control chip, and described ethernet PHY module is made up of two groups of ethernet PHY chips; First group of ethernet PHY chip externally carries power supply port, is connected with the electric mouth in interface module by coupler; Second group of ethernet PHY chip externally provides light mouth, is connected with the light mouth in interface module;
Described coupler is the tapped four port orientations couplers of band;
The input of described power module is connected with the output of three phase mains; The output of described power module is connected, for described gigabit switch is powered with exchange control chip;
Described electric mouth protection module is made up of gas discharge diode and transient voltage protect IC; One pole of described gas discharge diode is connected with the centre tap of described coupler electric mouth side in interface module, another pole ground connection of described gas discharge diode; Described transient voltage protect IC is connected to described coupler one end near first group of ethernet PHY chip.
2. gigabit switch according to claim 1, is characterized in that: described gigabit switch increases logic control chip and indicating module; The input of described logic control chip is connected with exchange control chip; The described output of logic control chip is connected with the input of indicating module.
3. logic control chip according to claim 2, is characterized in that: described logic control chip adopts RTL8321 chip and/or described indicating module to adopt LED group.
4. gigabit switch according to claim 1, is characterized in that: described gigabit switch increases level transferring chip; The input of described level transferring chip is connected with exchange control chip, and the output of described level transferring chip externally provides serial ports.
5. gigabit switch according to claim 4, is characterized in that: described serial ports increases serial ports protection module; Described serial ports protection module comprises gas discharge tube triode, the first Transient Suppression Diode group, the second Transient Suppression Diode, the first thermistor and the second thermistor;
The two poles of the earth of described gas discharge tube triode connect the receipts signal end of serial ports and the end that signals, a pole ground connection respectively;
The first described thermistor and the second thermistor are connected on the receipts signal end of serial ports respectively and signal on end;
The first described Transient Suppression Diode group is connected in parallel on the receipts signal end of serial ports and signals on end; The first described Transient Suppression Diode group is in series by two Transient Suppression Diodes, its series connection node ground connection;
The second described transient voltage suppressor paralleling is on the receipts signal end and signalling end of serial ports.
6. gigabit switch according to claim 1, is characterized in that: described power module comprises the secondary power supply of primary power source and multiple different magnitude of voltage; The input of described primary power source is connected with the output of three phase mains, and exporting can for the DC power supply of gigabit switch work; The secondary power supply of described different magnitudes of voltage is produced by DC-to-DC conversion regime by the output of primary power source.
7. the gigabit switch according to claim 1 or 6, is characterized in that: described power module increases power source protective module; Described power source protective module is serially connected between the output of three phase mains and the input of power module; Described power source protective module comprises fuse, piezo-resistance group, gas discharge diode, electromagnetic interface filter and bridge rectifier;
Described fuse is connected on the live wire of three phase mains;
Described piezo-resistance group is connected in parallel between the live wire of three phase mains and the zero line of three phase mains; Described piezo-resistance group is made up of the first piezo-resistance group and the second piezo-resistance parallel connection; The first described piezo-resistance group is in series by two piezo-resistances;
The two poles of the earth of described gas discharge diode are connected with the ground wire of three phase mains with the series connection node of two piezo-resistances in the first piezo-resistance group respectively;
Described electromagnetic interface filter is connected in parallel between the live wire of three phase mains and the zero line of three phase mains;
Described bridge rectifier is connected in parallel between the live wire of three phase mains and the zero line of three phase mains.
8. gigabit switch according to claim 1, is characterized in that: described exchange control chip adopts RTL8382M chip; PHY module is integrated with in described RTL8382M chip; Described PHY module externally carries power supply port.
9. gigabit switch according to claim 1, it is characterized in that: the described synchronous DRAM internal storage be connected with exchange control chip adopts DDR3 internal memory, the chip of employing is that K4B1G0846G chip and/or described flash memory adopt W25Q128FV chip.
10. gigabit switch according to claim 1, is characterized in that: first group of ethernet PHY chip in described ethernet PHY module adopts a slice RTL8218B chip to provide 8 100/1000BASE-T electricity mouths; By two groups of QSGMII interface swap datas between described RTL8218B chip and exchange control chip; And/or second group of ethernet PHY chip adopts two panels RTL8214FC chip to provide 2*4 1000BASE-SX light mouth; By one group of QSGMII interface swap data between described RTL8214FC chip and exchange control chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420615403.2U CN204119269U (en) | 2014-10-23 | 2014-10-23 | A kind of gigabit switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420615403.2U CN204119269U (en) | 2014-10-23 | 2014-10-23 | A kind of gigabit switch |
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| CN204119269U true CN204119269U (en) | 2015-01-21 |
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| CN201420615403.2U Expired - Fee Related CN204119269U (en) | 2014-10-23 | 2014-10-23 | A kind of gigabit switch |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105282054A (en) * | 2015-11-30 | 2016-01-27 | 湖北三江航天万峰科技发展有限公司 | Anti-interference rugged Ethernet switch |
| CN107872406A (en) * | 2017-11-13 | 2018-04-03 | 济南浪潮高新科技投资发展有限公司 | A kind of Portable Reinforced interchanger based on mobile cloud |
| CN110505538A (en) * | 2019-08-26 | 2019-11-26 | 深圳市三旺通信股份有限公司 | A kind of 8 mouthfuls of gigabit double frequency high-power wireless interchangers of intrinsic safety type |
-
2014
- 2014-10-23 CN CN201420615403.2U patent/CN204119269U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105282054A (en) * | 2015-11-30 | 2016-01-27 | 湖北三江航天万峰科技发展有限公司 | Anti-interference rugged Ethernet switch |
| CN105282054B (en) * | 2015-11-30 | 2019-02-19 | 湖北三江航天万峰科技发展有限公司 | A kind of anti-interference reinforcement type Ethernet switch |
| CN107872406A (en) * | 2017-11-13 | 2018-04-03 | 济南浪潮高新科技投资发展有限公司 | A kind of Portable Reinforced interchanger based on mobile cloud |
| CN110505538A (en) * | 2019-08-26 | 2019-11-26 | 深圳市三旺通信股份有限公司 | A kind of 8 mouthfuls of gigabit double frequency high-power wireless interchangers of intrinsic safety type |
| CN110505538B (en) * | 2019-08-26 | 2021-08-24 | 深圳市三旺通信股份有限公司 | Intrinsic safety type 8-port kilomega dual-frequency high-power wireless switch |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20150121 Termination date: 20211023 |