CN204046866U - Semiconductor module, LED drive device and LED light device - Google Patents
Semiconductor module, LED drive device and LED light device Download PDFInfo
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- CN204046866U CN204046866U CN201420367050.9U CN201420367050U CN204046866U CN 204046866 U CN204046866 U CN 204046866U CN 201420367050 U CN201420367050 U CN 201420367050U CN 204046866 U CN204046866 U CN 204046866U
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The utility model provides semiconductor module, LED drive device and LED light device.This semiconductor module has: the single support sheet be made up of conductive material, comprise the 1st semiconductor chip of horizontal type grid control type element, comprise the 2nd semiconductor chip of longitudinal type rectifier cell, described horizontal type grid control type element has the 1st main terminal on the interarea being formed in described 1st semiconductor chip, 2nd main terminal, control terminal, the negative electrode that described longitudinal type rectifier cell has the anode on the interarea being formed in described 2nd semiconductor chip and is formed on another interarea of described 2nd semiconductor chip, described 1st semiconductor chip and described 2nd semiconductor chip are fixed in described single support sheet, described 1st main terminal is connected with described single support sheet low resistance, described negative electrode is directly connected with described single support sheet low resistance.According to the utility model, the miniaturization of the switching circuits such as LED drive device can be contributed to.
Description
Technical field
The utility model relates to semiconductor module, particularly relates to the semiconductor module in switching circuits such as being applied to LED (Light Emitting Diode: light-emitting diode) drive unit and LED drive device and the LED light device with this semiconductor module.
Background technology
In main advanced technology state, can say that the electric energy that illumination uses reaches about 15% of the gross generation of various countries, from the viewpoint of global environmental problems, require the minimizing of electric energy.With this requirement for background, compared with the incandescent lamp used with existing lighting device or fluorescent lamp, there is the few and LED (Light Emitting Diode) that the life-span is long of power consumption and receive publicity as the LED light device of light source.Further, accompany therewith, carry out the exploitation of the LED drive device for driving LED.
LED has strong point as above, and on the other hand, also has the manufacture deviation of positive direction voltage (Vf) and the such weakness of temperature drift.Therefore, from the viewpoint of high efficiency, be known in LED light device, compared to constant voltage mode, preferred current constant mode.
Figure 12 is the circuit diagram (patent documentation 1) of the structure of the existing LED light device that current constant mode is shown.Existing LED light device 100 has power supply 101, LED drive device 102 and LED103.LED drive device 102 has grid control type element Q, choking-winding L, fly-wheel diode (flywheel diode) D and control circuit IC.An electrode of grid control type element Q is connected with the positive pole of power supply 101, and another electrode via sustained diode ground connection, and is connected with the positive pole side line of LED103 via choking-winding L.Control circuit IC carries out on-off control, to make the current constant flowing through LED103 to grid control type element Q.
In addition, Figure 13 is the cutaway view of the structure that existing LED light device is shown.Existing LED light device 100 such as has the profile of bulb type, has diffuser 104, joint 105, radiator 106 and is provided with the circuit substrate 107 of LED drive device 102 and LED103.Diffuser 104 is hemispheric resin cover of the outside for the light of releasing from LED103 being emitted to LED light device, and joint 105 is metal charging part having end cylindrical shape, and radiator 106 is metal cartridge type radiators (basket).Circuit substrate 107 is accommodated in the inside of joint 105 and radiator 106.
Patent documentation 1: Japanese Unexamined Patent Publication 2009-525595 publication
In the LED light device 100 of bulb type, in order to ensure the simplification of the freedom shape of radiator 106 or the assembling procedure of LED light device 100, require more small-sized circuit substrate 107.In addition, in order to provide the LED light device of the bulb type corresponding with less joint, the miniaturization of circuit substrate 107 is also required.
Utility model content
The utility model is point in view of the above problems, the semiconductor module providing the miniaturization helping the switching circuits such as LED drive device and the LED drive device with this semiconductor module and LED light device.
According to a mode of the present utility model, semiconductor module of the present utility model, is characterized in that, has: the single support sheet be made up of conductive material, comprise the 1st semiconductor chip of horizontal type grid control type element, and comprise the 2nd semiconductor chip of longitudinal type rectifier cell, described horizontal type grid control type element has the 1st main terminal on the interarea being formed in described 1st semiconductor chip, 2nd main terminal and control terminal, the negative electrode that described longitudinal type rectifier cell has the anode on the interarea being formed in described 2nd semiconductor chip and is formed on another interarea of described 2nd semiconductor chip, described 1st semiconductor chip and described 2nd semiconductor chip are fixed in described single support sheet, described 1st main terminal is connected with described single support sheet low resistance, described negative electrode is directly connected with described single support sheet low resistance.
Described horizontal type grid control type element has the 1st horizontal type grid control type element and the 2nd horizontal type grid control type element that are one another in series and connect, described 1st horizontal type grid control type element has the 1st control terminal, described 2nd horizontal type grid control type element has the 2nd control terminal, and described 1st control terminal and described 2nd control terminal are applied in the 1st control voltage different from each other and the 2nd control voltage.
Described 1st horizontal type grid control type element is carried out on-off and is controlled, and described 2nd horizontal type grid control type element is carried out analogue enlargement.
The current potential of described 2nd control terminal is fixed by high frequency.
Described 1st horizontal type grid control type element is connected between described 2nd horizontal type grid control type element and described longitudinal type rectifier cell.
Described semiconductor module has the multiple outside terminals be made up of conductive material, and described single support sheet is via at least one outside terminal in described multiple outside terminal or be not connected with load via any outside terminal.
Described 1st semiconductor chip has the Semiconductor substrate be made up of GaN semi-conducting material.
Described Semiconductor substrate is connected with described 1st main terminal low resistance.
According to another way of the present utility model, LED drive device of the present utility model, is characterized in that, has: above-mentioned semiconductor module; And the choking-winding to be connected with described single support sheet and output capacitor.
According to another mode of the present utility model, LED light device of the present utility model, has: above-mentioned LED drive device; And the LED to be connected in parallel with described output capacitor.
According to the utility model, the semiconductor module of the miniaturization helping the switching circuits such as LED drive device can be provided and there is LED drive device and the LED light device of this semiconductor module.
Accompanying drawing explanation
Fig. 1 a to Fig. 1 c is the figure of the structure of the semiconductor module that the 1st execution mode of the present utility model is shown.
Fig. 2 a, Fig. 2 b are the cutaway views that the 1st semiconductor chip of the 1st execution mode of the present utility model and the structure of the 2nd semiconductor chip are shown.
Fig. 3 is the circuit diagram of the structure of the LED light device that the 1st execution mode of the present utility model is shown.
Fig. 4 is the figure of the structure of the semiconductor module of the 1st variation that the 1st execution mode of the present utility model is shown.
Fig. 5 is the figure of the structure of the semiconductor module of the 2nd variation that the 1st execution mode of the present utility model is shown.
Fig. 6 is the figure of the structure of the semiconductor module of the 3rd variation that the 1st execution mode of the present utility model is shown.
Fig. 7 a, Fig. 7 b are the figure of the structure of the semiconductor module of the 4th variation that the 1st execution mode of the present utility model is shown.
Fig. 8 a to Fig. 8 c is the figure of the structure of the semiconductor module that the 2nd execution mode of the present utility model is shown.
Fig. 9 is the circuit diagram of the structure of the LED light device that the 2nd execution mode of the present utility model is shown.
Figure 10 is the figure of the structure of the semiconductor module of the 1st variation that the 2nd execution mode of the present utility model is shown.
Figure 11 is the figure of the structure of the 1st semiconductor chip of the 2nd variation that the 2nd execution mode of the present utility model is shown.
Figure 12 is the circuit diagram of the structure that existing LED light device is shown.
Figure 13 is the cutaway view of the structure that existing LED light device is shown.
Label declaration
1: chip carrier; 2: the 1 semiconductor chips; 3: the 2 semiconductor chips; 4: the 3 semiconductor chips; 10: semiconductor module; 22,23: Semiconductor substrate; 40:LED lighting device; 41: DC power supply; 42:LED drive unit; 43:LED; 44: control circuit; Q1: horizontal type grid control type element; D1: longitudinal type rectifier cell.
Embodiment
Then, with reference to accompanying drawing, execution mode of the present utility model is described.In the record of following accompanying drawing, same or analogous label is marked to same or analogous part.But, it should be noted that accompanying drawing is schematic.Further, execution mode shown below has illustrated the apparatus and method for specializing technological thought of the present utility model, and in execution mode of the present utility model, the structure, configuration etc. of structure member are not defined as following content.In execution mode of the present utility model, various change can be applied in the scope of claims.
(the 1st execution mode)
With reference to Fig. 1 ~ Fig. 3, the semiconductor module of the 1st execution mode, LED drive device and LED light device are described.Fig. 1 is the figure of the structure of the semiconductor module that the 1st execution mode of the present utility model is shown.Fig. 1 a is the plane graph of the semiconductor module 10 of present embodiment, and Fig. 1 b is the X-X cutaway view in Fig. 1 a of the semiconductor module 10 of present embodiment, and Fig. 1 c is the equivalent circuit diagram of the semiconductor module 10 of present embodiment.The semiconductor module 10 of present embodiment has one single chip seat 1, the 1st semiconductor chip 2, the 2nd semiconductor chip the 3,1st semiconductor chip 2 and the 2nd semiconductor chip 3 and is fixed on chip carrier 1.
The chip carrier 1 of present embodiment is equivalent to support sheet of the present utility model, is the single square plate formed by punching press by conductive metal plates such as copper.Chip carrier 1 has the 1st interarea (upper surface) TS respect to one another and the 2nd interarea (lower surface) BS, is surrounded during viewed in plan by multiple lead terminal LT.The chip carrier 1 of present embodiment is connected with at least one lead terminal LT low resistance via at least one wire, is connected with the LED as load via lead terminal LT.Chip carrier 1 and each lead terminal LT are sealed by sealing resin MR at least partially, and the 2nd interarea BS of chip carrier 1 is exposed to the back side of semiconductor module 10, and each lead terminal LT gives prominence to from sealing resin MR except a part.That is, semiconductor module 10 has DIP (Dual Inline Package: dual in-line package) structure.
1st semiconductor chip 2 comprises the horizontal type grid control type element Q1 be made up of MOSFET, IGBT, bipolar transistor etc.1st semiconductor chip 2 is fixed on the 1st interarea TS side of chip carrier 1 by conductive adhesive CA.Chip carrier 1 plays function as the heating panel of the 1st semiconductor chip 2.The horizontal type grid control type element Q1 of present embodiment is the horizontal type HEMT (High Electron Mobility Transistor: High Electron Mobility Transistor) be made up of GaN (gallium nitride) based semiconductor material, has source terminal (the 1st main terminal) ST, drain terminal (the 2nd main terminal) DT and gate terminal (control terminal) GT.Source terminal ST is directly connected with chip carrier 1 low resistance via at least one wire, and drain terminal DT and gate terminal GT are connected from lead terminal LT low resistances different respectively via at least one wire respectively, and are exported to the outside of sealing resin MR.In addition, the GaN semi-conducting material in the utility model is by Al
xin
yga
1-x-ythe semi-conducting material that N (0≤x≤1,0≤y≤1,0≤x+y≤1) defines.
2nd semiconductor chip 3 comprises the longitudinal type rectifier cell D1 be made up of SBD, FRD, MPS etc.2nd semiconductor chip 3 is fixed on the 1st interarea TS side of chip carrier 1 by conductive adhesive CA.Chip carrier 1 plays function as the heating panel of the 2nd semiconductor chip 3.The longitudinal type rectifier cell D1 of present embodiment is the longitudinal type SBD be made up of SiC (carborundum), has anode terminal AT and cathode terminal KT.Anode terminal AT is connected with lead terminal LT low resistance via at least one wire, and cathode terminal KT is directly connected with chip carrier 1 low resistance by conductive adhesive CA, is exported to the outside of sealing resin MR respectively.The cathode terminal KT of longitudinal type rectifier cell D1 becomes same potential by chip carrier 1 with the source terminal S of horizontal type grid control type element Q1, and chip carrier 1 becomes the output stage of semiconductor module 10.
Fig. 2 is the cutaway view that the 1st semiconductor chip 2 of the 1st execution mode of the present utility model and the structure of the 2nd semiconductor chip 3 are shown.Fig. 2 a is the cutaway view of the 1st semiconductor chip 2 of present embodiment.1st semiconductor chip 2 comprises the horizontal type grid control type element Q1 be made up of HEMT, and horizontal type grid control type element Q1 has Semiconductor substrate 23, source electrode S, drain electrode D and gate electrode G.Source electrode S, drain electrode D and gate electrode G are connected with source terminal ST, drain terminal DT and gate terminal GT respectively.Semiconductor substrate 23 is made up of at least one semiconductor layer, has an interarea (surface) 21 respect to one another and another interarea (back side) 22, forms the 1st semiconductor chip 2.Horizontal type grid control type element Q1 controls the electric current flow through abreast with an interarea 21 in Semiconductor substrate 23 by the voltage being applied to gate electrode G.
The Semiconductor substrate 23 of present embodiment have be arranged on another interarea 22 side conductivity substrate 24, be formed in buffer area 25 between conductivity substrate 24 and an interarea 21, be formed in active area 26 between buffer area 25 and an interarea 21.Conductivity substrate 24 is such as made up of the Si (silicon) or SiC that with the addition of conductive impurities, and the support substrate as buffer area 25 and active area 26 plays function.In addition, the horizontal type grid control type element Q1 of present embodiment has the backplate BM contacted with another interarea 22 of Semiconductor substrate, but also can omit this backplate BM and make conductivity substrate 24 as backplate to play function.
Buffer area 25 is made up of at least one GaN semiconductor material layer, do not mate with the lattice between active area 26 preferably in mitigation conductivity substrate 24 and arrange, but also can omit buffer area 25 according to the semi-conducting material of conductivity substrate 24 and active area 26.
Active area 26 is made up of at least one GaN semiconductor material layer, provides the raceway groove (current path) of horizontal type grid control type element Q1.In addition, the active area 26 of present embodiment has carrier mobility region 261 and charge carrier supply area 262.Carrier mobility region 261 is regions that resistance ratio is lower, and the main channel region as horizontal type grid control type element Q1 plays function.Charge carrier supply area 262 forms heterojunction between carrier mobility region 261, has the function of the carrier concentration improving carrier mobility region 261.
Source electrode S is made up of metals such as Al (aluminium), is arranged on an interarea 21 in the mode contacted with Semiconductor substrate 23 low resistive.Drain electrode D is made up of metals such as Al, to contact with Semiconductor substrate 23 low resistive and to be arranged on an interarea 21 with the mode that source electrode S separates.Gate electrode G is made up of metals such as Au (gold), and an interarea 21 is arranged to separate with source electrode S and drain electrode D between source electrode S and drain electrode D.Horizontal type grid control type element Q1 has the threshold voltage of regulation, when the voltage applied gate electrode G is more than threshold voltage, between source electrode S and drain electrode D, flows through electric current, when the voltage applied gate electrode G is less than threshold voltage, suppresses the flowing of electric current.
Fig. 2 b is the cutaway view of the 2nd semiconductor chip 3 of present embodiment.2nd semiconductor chip 3 comprises the longitudinal type rectifier cell D1 be made up of SBD, and longitudinal type rectifier cell D1 has Semiconductor substrate 33, anode electrode A and cathode electrode K.Anode electrode A is connected with anode terminal AT and cathode terminal KT respectively with cathode electrode K.Semiconductor substrate 33 is made up of at least one semiconductor layer, has an interarea (surface) 31 respect to one another and another interarea (back side) 32, forms the 2nd semiconductor chip 3.In longitudinal type rectifier cell D1, when antianode electrode A applies to be the voltage of more than regulation positive direction voltage relative to cathode electrode K, in Semiconductor substrate 33, flow through the electric current vertical with an interarea 31 from anode electrode A towards cathode electrode.
The Semiconductor substrate 33 of present embodiment has the joining zone 331 being arranged on another interarea 32 side, the withstand voltage region 333 being formed in the cathode zone 332 between joining zone 331 and an interarea 31, interarea 31 side be formed in cathode zone 332.Joining zone 331 is made up of the N+ type SiC that with the addition of conductive impurities with higher concentration, and the low resistance formed between Semiconductor substrate 33 and cathode electrode K connects.
Cathode zone 332 is made up of the N-type SiC that with the addition of conductive impurities with lower concentration, forms the negative electrode of longitudinal type rectifier cell D1 together with joining zone 331.
Withstand voltage region 333 is made up of the P type SiC that with the addition of conductive impurities, in cathode zone 332, be formed as island.The guard ring that the electric field that withstand voltage region 333 produces as the end at Schottky electrode 34 relaxed in Semiconductor substrate 33 is concentrated plays function.
Schottky electrode 34 is made up of metals such as Mo (molybdenum), is arranged to contact with the 1st interarea 31 of Semiconductor substrate 33, and forms Schottky barrier between Semiconductor substrate 33.Anode electrode A is made up of metals such as Al, is formed as being connected with Schottky electrode 34 low resistance.Cathode electrode K is made up of metals such as Ni (nickel), is arranged to be connected with the 2nd interarea 32 low resistance of Semiconductor substrate 33 via joining zone 331.Longitudinal type rectifier cell D1 has the positive direction voltage of regulation, when the voltage that antianode electrode A applies is more than positive direction voltage, between anode electrode A and cathode electrode K, flow through electric current, when the voltage that antianode electrode A applies is less than positive direction voltage, stop electric current.
Fig. 3 is the circuit diagram of the structure of the LED light device that the 1st execution mode of the present utility model is shown.The LED light device 40 of present embodiment has DC power supply 41, LED drive device 42 and LED43.LED drive device 42 has horizontal type grid control type element Q1, choking-winding L1, longitudinal type rectifier cell D1, output capacitor C1, detects resistance Rs and control circuit 44.Vertical gate control type element Q1 and horizontal type rectifier cell D1 is connected in series, and is accommodated in semiconductor module 10.
Horizontal type grid control type element Q1 can be the closed type HEMT with positive threshold voltage, also can be the open type HEMT with negative threshold voltage.When as in the present embodiment for LED light device, in its action, open type HEMT is more preferably.
DC power supply 41 has AC power 411, diode bridge 412 and input capacitor 413.The alternating electromotive force of AC power 411 is rectified by diode bridge 412, smoothing by input capacitor 413, is converted into the direct current power that comprises pulsating current and outputs to LED drive device 42.DC power supply 41 can be made up of direct current converter sections such as SMPS (Switched Mode Power Supply: switched power supplier), also can be replaced into the DC power supply such as battery.
LED drive device 42 has the structure of the direct current transducer of buck chopper-type.The drain terminal DT of horizontal type grid control type element Q1 is connected with one end of the input capacitor 413 of the positive pole as DC power supply 41, and source terminal ST is connected with the negative electrode of LED43 via sustained diode 1, and connects via the anode of choking-winding L1 and LED43.Output capacitor C1 and LED43 is connected in parallel, and detects resistance Rs and is connected between LED43 and output capacitor C1.When considering the annexation of semiconductor module 10, source terminal ST (cathode terminal KT) and anode terminal AT forms pair of output of LED drive device 42.
Control circuit 44 has current detection circuit 441, amplifier 442, reference voltage 443, comparator 444, triangular wave generator 445 and buffer circuit 446.Current detection circuit 441 detects the electric current flowing through and detect resistance Rs, is outputted to the non-inverting input terminal of amplifier 442.Amplifier 442 amplifies the error be connected between the magnitude of voltage of reference voltage 443 of inversing input terminal and above-mentioned both end voltage, outputs to the inversing input terminal of comparator 444 as error signal.Comparator 444 compares the signal level of triangular wave exported from the triangular wave generator 445 being connected to non-inverting input terminal and the level of above-mentioned error signal, the drive singal corresponding with comparative result is outputted to the gate terminal GT of horizontal type grid control type element Q1 via buffer circuit 446.Control circuit 44 carries out on-off (switch) according to the frequency of oscillation of triangular wave generator 445 to horizontal type grid control type element Q1 and controls, to make the both end voltage detecting resistance Rs close to the magnitude of voltage specified.
In the LED light device 40 of present embodiment, when horizontal type grid control type element Q1 connects, in the circuit ring be made up of DC power supply 41, horizontal type grid control type element Q1 and choking-winding L1, flow through electric current.Then, when horizontal type grid control type element Q1 disconnects, in the circuit ring be made up of choking-winding L1, output capacitor C1 and longitudinal type rectifier cell D1, flow through electric current, LED43 is applied to the both end voltage of output capacitor C1, in LED43 and detection resistance Rs, flow through electric current.Control circuit 44 changes the duty ratio of horizontal type grid control type element Q1, to make the magnitude of voltage of the close regulation defined by reference voltage 443 of both end voltage detecting resistance Rs.Because LED drive device 42 can make the current value flowing through LED43 close to the current value specified, therefore, it is possible to be constant by the brilliance control of LED43.
Semiconductor module 10 due to present embodiment has the horizontal type grid control type element Q1 and longitudinal type rectifier cell D1 that are made up of the material of applicable high frequency mo, therefore by improving the operating frequency of LED drive device 42, the circuit block such as choking-winding L1 and output capacitor C1 can be made miniaturized.Therefore, semiconductor module 10 contributes to the miniaturization of LED drive device 42 and LED light device 40.
In addition, because the horizontal type grid control type element Q1 be made up of GaN semi-conducting material and the longitudinal type rectifier cell D1 be made up of SiC is the element that conduction losses is less, the heating of the semiconductor module 10 when therefore LED drive device 42 and LED light device 40 realize high efficiency and inhibit LED drive device 42 action.Therefore, it is possible to be used in, heating is dispersed into parts miniaturization or the omissions such as outside fin, LED drive device 42 and LED light device 40 realize miniaturization.In addition, by reducing the heating from LED drive device 42, the temperature drift of the Vf of the weakness as LED can be suppressed.
In addition, in horizontal type grid control type element Q1, because the current potential of conductivity substrate 24 is equal with the current potential of source electrode S, be therefore positioned on one single chip seat 1 together with longitudinal type rectifier cell D1, be connected with longitudinal type rectifier cell D1 low resistance.According to this structure, semiconductor module 10 can increase the area of dissipation of area, i.e. the 1st and the 2nd semiconductor chip 2,3 of chip carrier 1 relative to its profile, contribute to the miniaturization of LED drive device 42 and LED light device 40.
In addition, the shape due to chip carrier 1 is simplified and can reduces the number of closing line, therefore, it is possible to provide LED drive device 42 at a low price and LED light device 40.In addition, chip carrier 1 becomes the output stage of switch.In addition, owing to decreasing the stray inductance composition between horizontal type grid control type element Q1 and longitudinal type rectifier cell D1, therefore, it is possible to improve the operating frequency of LED drive device 42, and can restraint speckle.Therefore, except the miniaturization of circuit block, the parts miniaturizations such as noise filter can also be made or reduce.
(the 1st variation)
Fig. 4 is the figure of the structure of the semiconductor module of the 1st variation that the 1st execution mode of the present utility model is shown.The semiconductor module 10 of this variation is with the difference of the semiconductor module 10 of Fig. 1, and the source terminal of the 1st semiconductor chip 2 is connected with chip carrier 1 low resistance indirectly.The source terminal of the 1st semiconductor chip 2 is directly connected with lead terminal LT (ST) low resistance via at least one wire, is connected by the 2nd interarea BS of the wiring pattern with chip carrier 1 that are positioned at the outside of semiconductor module 10.In addition, the source terminal of the 1st semiconductor chip 2 also can be connected with chip carrier 1 with lead terminal LT (ST/KT) via lead terminal LT (ST).
(the 2nd variation)
Fig. 5 is the figure of the structure of the semiconductor module of the 2nd variation that the 1st execution mode of the present utility model is shown.The semiconductor module 10 of this variation is with the difference of the semiconductor module of Fig. 1, the negative electrode of the source terminal of the 1st semiconductor chip 2 and the 2nd semiconductor chip 3 is exported to the structure of the outside of sealing resin MR.The chip carrier 1 of this variation is connected with the wiring pattern of the outside being positioned at semiconductor module 10 via the 2nd interarea BS of chip carrier 1, is exported to the outside of sealing resin MR.Therefore, the source terminal of the 1st semiconductor chip 2 is not connected with any one lead terminal LT with the negative electrode of the 2nd semiconductor chip 3 and is connected with LED43 via chip carrier 1.
(the 3rd variation)
Fig. 6 is the figure of the structure of the semiconductor module of the 3rd variation that the 1st execution mode of the present utility model is shown.The semiconductor module 10 of this variation is with the difference of the semiconductor module of Fig. 1, the negative electrode of the source terminal of the 1st semiconductor chip 2 and the 2nd semiconductor chip 3 is exported to the structure of the outside of sealing resin MR.In addition, semiconductor module 10 and the difference of the semiconductor module of Fig. 1 are the shape of chip carrier 1 and lead terminal LT.Chip carrier 1 and at least one lead terminal LT (ST/KT) are integrally formed, and the source terminal of the 1st semiconductor chip 2 is connected with the wiring pattern of the outside being positioned at semiconductor module 10 via lead terminal LT (ST/KT) with the negative electrode of the 2nd semiconductor chip 3.
(the 4th variation)
Fig. 7 is the figure of the structure of the semiconductor module of the 4th variation that the 1st execution mode of the present utility model is shown.Fig. 7 a is the plane graph of the semiconductor module 10 of this variation, and Fig. 7 b is the cutaway view of the 1st semiconductor chip 2 of this variation.The semiconductor module 10 of this variation is with the difference of the semiconductor module of Fig. 1, and the structure of the 1st semiconductor chip 2 and the negative electrode by the source terminal of the 1st semiconductor chip 2 and the 2nd semiconductor chip 3 export to the structure of the outside of sealing resin MR.In the 1st semiconductor chip 2, the source electrode S of horizontal type grid control type element Q1 is formed as extending from an interarea 21 of Semiconductor substrate 23 towards another interarea 22, and the bottom of source electrode S is arranged in conductivity substrate 24.Because the current potential of conductivity substrate 24 is equal with the current potential of source electrode S, therefore the source terminal of the 1st semiconductor chip 2 does not use wire and is directly connected with chip carrier 1 low resistance.
(the 2nd execution mode)
Fig. 8 is the figure of the structure of the semiconductor module that the 2nd execution mode of the present utility model is shown.Fig. 8 a is the plane graph of the semiconductor module 10 of present embodiment, and Fig. 8 b is the cutaway view of the 1st semiconductor chip 2 of present embodiment, and Fig. 8 c is the equivalent circuit diagram of the semiconductor module 10 of present embodiment.The difference of the semiconductor module 10 of present embodiment and the semiconductor module of the 1st execution mode is, the structure of the 1st the semiconductor chip 2 and gate terminal of the 1st semiconductor chip 2 is exported to the structure of the outside of sealing resin MR.
1st semiconductor chip 2 comprises the horizontal type grid control type element Q1 be made up of the horizontal type HEMT with double gated architecture.Horizontal type grid control type element Q1 has source terminal ST, drain terminal DT, the 1st gate terminal (the 1st control terminal) GT1 and the 2nd gate terminal (the 2nd control terminal) GT2.1st is connected from lead terminal LT low resistances different respectively via at least one wire respectively with the 2nd gate terminal GT1, GT2, is exported to the outside of sealing resin MR.
1st semiconductor chip 2 comprises the horizontal type grid control type element Q1 be made up of double gated HEMT, and horizontal type grid control type element Q1 has the source electrode S be formed in Semiconductor substrate 23, drain electrode D, the 1st gate electrode G1, the 2nd gate electrode G2.1st is connected with the 1st and the 2nd gate terminal GT1, GT2 respectively with the 2nd gate electrode G1, G2.Horizontal type grid control type element Q1 comprises the 1st horizontal type grid control type element Q11 and the 2nd horizontal type grid control type element Q12.1st horizontal type grid control type element Q11 is made up of source electrode S and the 1st gate electrode G1, and the 2nd horizontal type grid control type element Q12 is made up of the 2nd gate electrode G1 and drain electrode D.That is, horizontal type grid control type element Q1 can be considered as two horizontal type grid control type element Q11, Q12 and is one another in series and connects and eliminate the element of the source/drain common electrode of tie point.1st horizontal type grid control type element Q11 is connected between the 2nd horizontal type grid control type element Q12 and longitudinal type rectifier cell D1.Horizontal type grid control type element Q1 controls the electric current flow through abreast with an interarea 21 in Semiconductor substrate 23 by the voltage being applied to the 1st and the 2nd gate electrode G1, G2.
1st gate electrode G1 is made up of metals such as Au, is arranged to separate with source electrode S and drain electrode D in an interarea 21 between source electrode S and drain electrode D.2nd gate electrode G2 is made up of metals such as Au, and an interarea 21 is arranged to separate with the 1st gate electrode G1 and drain electrode D between the 1st gate electrode G1 and drain electrode D.Horizontal type grid control type element Q1 controls to flow through the electric current between source electrode S and drain electrode D according to the voltage being applied to the 1st and the 2nd gate electrode G1, G2 respectively.
Fig. 9 is the circuit diagram of the structure of the LED light device that the 2nd execution mode of the present utility model is shown.The difference of the LED light device 40 of present embodiment and the semiconductor module of the 1st execution mode is, the structure of semiconductor module 10 and the structure to the control circuit 44 that it controls.Semiconductor module 10 has the 1st horizontal type grid control type element Q11 and the 2nd horizontal type grid control type element Q12, and control circuit 44 is configured to export different drive singal to gate terminal GT1, GT2 of each horizontal type grid control type element Q11, Q12.In addition, for convenience of explanation, in fig .9, circuit notation is independently used to carry the 1st horizontal type grid control type element Q11 and the 2nd horizontal type grid control type element Q12.
The control circuit 44 of present embodiment has current detection circuit 441, amplifier 442, reference voltage 443, buffer circuit 446,448 and pulse generator 447.Current detection circuit 441 detects flowing through the electric current detecting resistance Rs, is outputted to the non-inverting input terminal of amplifier 442.Amplifier 442 amplifies the magnitude of voltage of reference voltage 443 and the error of above-mentioned both end voltage that are connected to inversing input terminal, outputs to the gate terminal GT2 of the 2nd horizontal type grid control type element Q12 as error signal via buffer circuit 446.Pulse generator 447 produces assigned frequency pulse, outputs to the gate terminal GT1 of the 1st horizontal type grid control type element Q11 via buffer circuit 448.Control circuit 44 carries out on-off (switch) according to the frequency of oscillation of pulse generator 447 to the 1st horizontal type grid control type element Q11 and controls, to make the both end voltage detecting resistance Rs close to the magnitude of voltage specified, and according to the error signal of amplifier 442, (linearly) control is simulated to the 2nd horizontal type grid control type element Q12.In addition, pulse generator 447 in a same manner as in the first embodiment, can be replaced into the structure being combined with comparator 444 and triangular wave generator 445.
In the LED light device 40 of present embodiment, when the 1st horizontal type grid control type element Q11 connects, the electric current controlled by the 2nd horizontal type grid control type element Q12 is fed into choking-winding L1.Then, when the 1st horizontal type grid control type element Q11 disconnects, in the circuit ring be made up of choking-winding L1, output capacitor C1 and longitudinal type rectifier cell D1, electric current is flow through.Because LED drive device 42 can make the current value flowing through LED43 close to the current value specified, therefore, it is possible to be constant by the brilliance control of LED43.
The semiconductor module 10 of present embodiment, except can obtaining the action effect identical with the semiconductor module of the 1st execution mode, can also obtain following action effect.In horizontal type grid control type element Q1, owing to being configured between the 1st gate electrode G1 and drain electrode D by the 2nd gate electrode G2 of the 2nd horizontal type grid control type element Q12 of analogue enlargement, because of this reduce be switched on disconnect control the 1st horizontal type grid control type element Q11 gate/drain between electric capacity Cgd.Therefore, it is possible to improve the operating frequency of LED drive device 42 further, contribute to the further miniaturization of LED drive device 42 and LED light device 40.
In addition, because horizontal type grid control type element Q1 has above-mentioned double gated architecture, therefore with arrange separately the 1st and compare with the situation of the 2nd horizontal type grid control type element Q11, Q12, comparatively excellent in the following areas.That is, one single chip can be utilized to form the 1st semiconductor chip 2 and can miniaturization be realized, the 1st and the 2nd horizontal wiring inductance between type grid control type element Q11, Q12 and wiring impedance can be reduced.Therefore, the semiconductor module 10 of present embodiment contributes to the raising of further miniaturization, further high efficiency and the reliability of LED drive device 42 and LED light device 40.
In addition, the semiconductor module 10 of present embodiment also can be configured to, and carries out analogue enlargement to the 1st horizontal type grid control type element Q11, and carries out on-off control to the 2nd horizontal type grid control type element Q12.
(the 1st variation)
Figure 10 is the figure of the structure of the semiconductor module of the 1st variation that the 2nd execution mode of the present utility model is shown.The semiconductor module 10 of this variation is to have the 3rd semiconductor chip 4 with the difference of the semiconductor module of Fig. 8.3rd semiconductor chip 4 comprises the 1st and the 2nd protection component ZD for the protection of the 1st and the 2nd gate terminal GT1, GT2.1st and the 2nd protection component ZD is all formed in the horizontal type Zener diode on single semiconductor chip, is connected between the 1st and the 2nd gate terminal GT1, GT2 and source terminal ST via wire.1st and the 2nd protection component ZD can be formed on multiple semiconductor chip, also can be longitudinal type element structure, also can pile up or be layered on the 1st and the 2nd semiconductor chip 2,3, even any configuration all can improve the ESD tolerance of each gate terminal.
(the 2nd variation)
Figure 11 is the figure of the structure of the 1st semiconductor chip of the 2nd variation that the 2nd execution mode of the present utility model is shown.The difference of the 1st semiconductor chip Q1 of this variation and the 1st semiconductor chip of Fig. 8 b is, by the 2nd horizontal type grid control type element Q12 of analogue enlargement, the potential difference between source electrode S and the 2nd gate electrode G2 is constant.2nd gate electrode G2 is applied in the current potential same with source electrode S-phase or is applied in the voltage of the regulation higher than source electrode S.That is, the 2nd gate electrode G2 is connected with short circuit between source electrode S or via the constant pressure source shown in dotted line, and the current potential of the 2nd control electrode G2 is fixed by high frequency.Owing to utilizing more easy structure to carry out analogue enlargement to the 2nd of this variation the horizontal type grid control type element Q12, therefore except the action effect identical with the semiconductor module of the 2nd execution mode, control circuit 44 can also be made to realize miniaturization.
As mentioned above, describe the utility model by execution mode and variation, but should not be construed the discussion of a part that forms the disclosure and accompanying drawing limits the utility model.According to the disclosure, the known various replacement execution mode of those skilled in the art, embodiment and application technology.That is, the utility model comprises the various execution modes etc. do not recorded certainly herein.Therefore, according to the above description, technical scope of the present utility model is only determined by the specific item of the utility model of right.Such as, semiconductor module 10 is not limited to LED light device 40 and LED drive device 42, can also be applied to the known switching circuits such as power inverter, be not limited to buck-boost type, can also be applied to the structure of buck chopper type switching circuit.In addition; semiconductor module 10 also can be SIP (Single Inline Package: single in-line packages) structure; as long as load the 1st and the 2nd semiconductor chip in single support sheet, then also can be configured to comprise the circumferential component such as control circuit or protective circuit.Further, single support sheet is not limited to square conductive metal plate, also can be made up of the thin plate of the arbitrary shape being formed with conductive traces pattern on insulation board.In addition, the semi-conducting material forming the 1st ~ 3rd semiconductor chip 2,3,4 can be selected from the arbitrary semi-conducting material such as Si, SiC, GaN, C (diamond).
Claims (10)
1. a semiconductor module, is characterized in that, this semiconductor module has:
The single support sheet be made up of conductive material;
Comprise the 1st semiconductor chip of horizontal type grid control type element; And
Comprise the 2nd semiconductor chip of longitudinal type rectifier cell,
Described horizontal type grid control type element has the 1st main terminal, the 2nd main terminal and control terminal on the interarea being formed in described 1st semiconductor chip,
The negative electrode that described longitudinal type rectifier cell has the anode on the interarea being formed in described 2nd semiconductor chip and is formed on another interarea of described 2nd semiconductor chip,
Described 1st semiconductor chip and described 2nd semiconductor chip are fixed in described single support sheet,
Described 1st main terminal is connected with described single support sheet low resistance,
Described negative electrode is directly connected with described single support sheet low resistance.
2. semiconductor module according to claim 1, is characterized in that,
Described horizontal type grid control type element has the 1st horizontal type grid control type element and the 2nd horizontal type grid control type element that are one another in series and connect,
Described 1st horizontal type grid control type element has the 1st control terminal,
Described 2nd horizontal type grid control type element has the 2nd control terminal,
Described 1st control terminal and described 2nd control terminal are applied in the 1st control voltage different from each other and the 2nd control voltage.
3. semiconductor module according to claim 2, is characterized in that,
Described 1st horizontal type grid control type element is carried out on-off and is controlled, and described 2nd horizontal type grid control type element is carried out analogue enlargement.
4. semiconductor module according to claim 2, is characterized in that,
The current potential of described 2nd control terminal is fixed by high frequency.
5. semiconductor module according to claim 2, is characterized in that,
Described 1st horizontal type grid control type element is connected between described 2nd horizontal type grid control type element and described longitudinal type rectifier cell.
6. semiconductor module according to claim 1, is characterized in that,
Described semiconductor module has the multiple outside terminals be made up of conductive material, and described single support sheet is via at least one outside terminal in described multiple outside terminal or be not connected with load via any outside terminal.
7. semiconductor module according to claim 1, is characterized in that,
Described 1st semiconductor chip has the Semiconductor substrate be made up of GaN semi-conducting material.
8. semiconductor module according to claim 7, is characterized in that,
Described Semiconductor substrate is connected with described 1st main terminal low resistance.
9. a LED drive device, is characterized in that, this LED drive device has:
Semiconductor module described in any one in claim 1 to 8; And
The choking-winding be connected with described single support sheet and output capacitor.
10. a LED light device, is characterized in that, this LED light device has:
LED drive device according to claim 9; And
The LED be connected in parallel with described output capacitor.
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| DE10122393A1 (en) * | 2001-05-09 | 2002-11-14 | Philips Corp Intellectual Pty | Flexible conductor foil with an electronic circuit |
| JP3993461B2 (en) * | 2002-05-15 | 2007-10-17 | 株式会社東芝 | Semiconductor module |
| US7808102B2 (en) * | 2006-07-28 | 2010-10-05 | Alpha & Omega Semiconductor, Ltd. | Multi-die DC-DC boost power converter with efficient packaging |
| US7825508B2 (en) * | 2006-07-28 | 2010-11-02 | Alpha Omega Semiconductor, Inc. | Multi-die DC-DC buck power converter with efficient packaging |
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