CN204031450U - 一种mems麦克风 - Google Patents
一种mems麦克风 Download PDFInfo
- Publication number
- CN204031450U CN204031450U CN201420430445.9U CN201420430445U CN204031450U CN 204031450 U CN204031450 U CN 204031450U CN 201420430445 U CN201420430445 U CN 201420430445U CN 204031450 U CN204031450 U CN 204031450U
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- Prior art keywords
- vibrating diaphragm
- backplane
- mems microphone
- operatic tunes
- area
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- 230000002787 reinforcement Effects 0.000 claims abstract description 35
- 230000004888 barrier function Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000013011 mating Effects 0.000 claims abstract description 6
- 230000010355 oscillation Effects 0.000 description 18
- 238000001514 detection method Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000013707 sensory perception of sound Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420430445.9U CN204031450U (zh) | 2014-07-31 | 2014-07-31 | 一种mems麦克风 |
Applications Claiming Priority (1)
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CN201420430445.9U CN204031450U (zh) | 2014-07-31 | 2014-07-31 | 一种mems麦克风 |
Publications (1)
Publication Number | Publication Date |
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CN204031450U true CN204031450U (zh) | 2014-12-17 |
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CN201420430445.9U Active CN204031450U (zh) | 2014-07-31 | 2014-07-31 | 一种mems麦克风 |
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CN (1) | CN204031450U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2551791A (en) * | 2016-06-30 | 2018-01-03 | Cirrus Logic Int Semiconductor Ltd | MEMS devices and processes |
CN107920318A (zh) * | 2016-10-08 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
US10085094B2 (en) | 2016-06-30 | 2018-09-25 | Cirrus Logic, Inc. | MEMS devices and processes |
CN108650596A (zh) * | 2018-06-28 | 2018-10-12 | 歌尔股份有限公司 | 一种敏感膜及传感器 |
-
2014
- 2014-07-31 CN CN201420430445.9U patent/CN204031450U/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2551791A (en) * | 2016-06-30 | 2018-01-03 | Cirrus Logic Int Semiconductor Ltd | MEMS devices and processes |
US10085094B2 (en) | 2016-06-30 | 2018-09-25 | Cirrus Logic, Inc. | MEMS devices and processes |
GB2551791B (en) * | 2016-06-30 | 2018-11-28 | Cirrus Logic Int Semiconductor Ltd | MEMS devices and processes |
CN107920318A (zh) * | 2016-10-08 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN107920318B (zh) * | 2016-10-08 | 2020-05-01 | 中芯国际集成电路制造(上海)有限公司 | Mems麦克风及其形成方法 |
CN108650596A (zh) * | 2018-06-28 | 2018-10-12 | 歌尔股份有限公司 | 一种敏感膜及传感器 |
US11363384B2 (en) | 2018-06-28 | 2022-06-14 | Weifang Goertek Microelectronics Co., Ltd. | Sensitive diaphragm with rim structure and sensor |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |