CN204014246U - Multilayer dielectricity barrier discharge low-temperature plasma generation device - Google Patents
Multilayer dielectricity barrier discharge low-temperature plasma generation device Download PDFInfo
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- CN204014246U CN204014246U CN201420501783.7U CN201420501783U CN204014246U CN 204014246 U CN204014246 U CN 204014246U CN 201420501783 U CN201420501783 U CN 201420501783U CN 204014246 U CN204014246 U CN 204014246U
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Abstract
The utility model relates to surface treatment technology of material field, specifically disclose a kind of multilayer dielectricity barrier discharge low-temperature plasma generation device, comprise power source and DBD plasma reactor, in the reative cell of DBD plasma reactor, be provided with 2 metal electrodes, one of them metal electrode connects the high-voltage output end of power source, another metal electrode ground connection, 2 two relative end faces of metal electrode are parallel to each other, between two metal electrodes, be provided with at least 3 layers of dielectric-slab, between adjacent media plate, there is gap.Between every two layer medium plate of the present utility model, can both discharge and form evenly good low temperature plasma, thin-film material all can be processed in the every one deck dielectric-slab both sides that mediate, cover two dielectric-slabs on electrode and can process thin film, can improve quantity and the area of the film of single treatment; Treatment effeciency is high.
Description
Technical field
The utility model relates to surface treatment technology of material field, particularly, relates to a kind of multilayer dielectricity barrier discharge low-temperature plasma generation device.
Background technology
Thin polymer film generally has good electrical insulation properties, as polyethylene, polypropylene, polytetrafluoroethylene, polyimides etc., the industrial circles such as electric, electrician, electronics, chemical industry have been widely used in, but most of film surface hydrophily is poor and heat-resisting ability is poor, so need to use gentle and effective processing method to it.Working medium barrier discharge (Dielectric Barrier Discharge, DBD) low temperature plasma producing has good non-equilibrium property, as gentle gas temperature and higher electron temperature, be applicable to very much polymer thin-film material to carry out surface treatment.
Relevant low temperature nonequilibrium plasma has got the attention and has carried out in the application study of thin polymer film surface-treated, than methods such as chemical treatments, that low temperature plasma has is pollution-free, processing time section, power consumption less, treatment effeciency advantages of higher.Low temperature plasma has many active particles, as photon, electronics, ion, excited state particle and other neutral particles, only occurs in the top layer of film when these particles and thin polymer film surface interaction, can not change the characteristic of film itself.
The plasma that is applicable to thin polymer film Surface Treatment Industry application should have large area, large volume and the feature such as even, result of study shows that the formations such as dielectric barrier discharge plasma structure of reactor, electrode material, working gas, power source are all the key factors that affect low-temperature plasma bulk properties, wherein for thin polymer film surface-treated DBD reactor, mostly be parallel plate-type or column type, by changing the features such as electrode and dielectric material, structure, realize large-area film not yet completely and process, still rest at present the laboratory research stage.
Existing for polymer thin-film material surface-treated DBD reactor, during processing, film sample must be close to the surface of dielectric layer, the one side contacting with plasma obtains modification.Conventionally parallel plate-type plasma reactor is comprised of the one deck between two metal electrodes and metal electrode or two layer medium layer, by metal electrode being applied to voltage, can only between two dielectric layers, form low temperature plasma, limit the large-area formation of homogeneous plasma large volume, and limited the realization that large area thin polymer film is processed.If increase electrode area, very easily cause the inhomogeneities of plasma, very easily damage dielectric layer and thin-film material, cause treatment effect poor, treatment effeciency is lower.
Utility model content
The purpose of this utility model is to overcome the above-mentioned shortcoming and defect of prior art, a kind of multilayer dielectricity barrier discharge low-temperature plasma generation device is provided, this device has multilayer dielectricity plate, and when thin-film material is carried out to surface treatment, the film size of single treatment obtains a larger increase.
The technical scheme in the invention for solving the above technical problem is:
Multilayer dielectricity barrier discharge low-temperature plasma generation device, comprise power source and DBD plasma reactor, in the reative cell of described DBD plasma reactor, be provided with 2 metal electrodes, one of them metal electrode connects the high-voltage output end of power source, another metal electrode ground connection, 2 two relative end faces of metal electrode are parallel to each other, and between two metal electrodes, are provided with at least 3 layers of dielectric-slab, between adjacent media plate, have gap.
Preferably, the width in above-mentioned gap is 0.5mm-3mm.
As further improvement of the utility model, between adjacent media plate, be provided with pad, this pad separates adjacent two dielectric-slabs, makes to form above-mentioned gap between two adjacent dielectric-slabs.
Preferably, the rectangular shape of above-mentioned dielectric-slab, is provided with 4 pads between adjacent media plate, and 4 pads lay respectively on four angles of dielectric-slab.
Further, described metal electrode is plate electrode or cylindrical electrode.
Further, described metal electrode is the tabular copper electrode of circular flat, and diameter is 120mm-140mm, and electrode edge has 3mm-6mm chamfering, and described dielectric-slab adopts quartz medium plate.
As another improvement of the present utility model, above-mentioned multilayer dielectricity barrier discharge low-temperature plasma generation device, also comprises gas cylinder, resitstance voltage divider and sample resistance; The reative cell of described DBD plasma reactor is provided with air inlet and exhaust outlet, and this air inlet is connected with gas cylinder by air inlet pipeline, is also provided with flowmeter on air inlet pipeline; The input of described resitstance voltage divider be connected to the high-voltage output end of power source and the metal electrode that is connected with the high-voltage output end of power source between; The metal electrode not being connected with the high-voltage output end of power source is by sample resistance ground connection.
To sum up, the beneficial effects of the utility model are:
1, multilayer dielectricity barrier discharge low-temperature plasma generation device of the present utility model adopts at least 3 layers of dielectric-slab, formation low temperature plasma makes can both discharge between every two layer medium plate, thin-film material all can be processed in the every one deck dielectric-slab both sides that mediate, cover two dielectric-slabs on electrode and can process thin film, can improve quantity and the area of the film of single treatment;
2, multilayer dielectricity barrier discharge low-temperature plasma generation device of the present utility model can obtain the low temperature discharge plasma of large area large volume, the adjusting of the power by driving power source, gas gap distance, working gas kind, gas gap between every two dielectric-slabs obtains evenly good low temperature plasma, and process for thin-film material surface, realize reducing of film surface water contact angle, the hydrophilic improvement of film surface;
3, the utility model does not have special harsh requirement to condition of work and driving power source, totally can produce large-area Uniform Discharge, to the equal not damaged of film, medium and electrode, guarantees the matrix characteristics of material, highly versatile.
4, adopt the utility model to process treating capacity and treatment effeciency that thin-film material can improve film greatly.
Accompanying drawing explanation
Fig. 1 is the structural representation of multilayer dielectricity barrier discharge low-temperature plasma generation device of the present utility model;
Fig. 2 is the structural representation of the multilayer dielectricity barrier discharge low-temperature plasma generation device in embodiment 4;
Fig. 3 is the surface water contact angle comparison diagram of the thin polymer film after processing under several air-gap separations.
Mark and corresponding parts title in accompanying drawing: 1-power source; 2-DBD plasma reactor; 21-metal electrode; 22-dielectric-slab; 23-pad; 24-observation window; 25-air inlet; 26-exhaust outlet; 3-gas cylinder; 4-flowmeter; 5-resitstance voltage divider; 6-sample resistance; 7-thin polymer film.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is done to detailed description further, but execution mode of the present utility model is not limited to this.
[embodiment 1]
As shown in Figure 1, multilayer dielectricity barrier discharge low-temperature plasma generation device, comprises power source 1 and DBD plasma reactor 2.
In the reative cell of described DBD plasma reactor 2, be provided with 2 metal electrodes 21: metal electrode A, metal electrode B, between two metal electrodes 21, be provided with at least 3 layers of dielectric-slab 22, the gap between adjacent media plate 22 with 0.5mm-3mm, gas gap when this gap is discharge process, hereinafter to be referred as " air gap ", in same multilayer dielectricity barrier discharge low-temperature plasma generation device, these gap widths can all equate also can not wait; Metal electrode A ground connection, metal electrode B connects the high-voltage output end of power source 1.
Two metal electrodes 21 both can adopt parallel plate electrode, also can adopt column type electrode, only needed 2 two relative end faces of metal electrode 21 to be parallel to each other.
Power source is interchange or bipolar pulse or unipolar pulse power supply, and wherein unipolar pulse power supply comprises the steeper trailing edge of rising edge slowly or the unipolar pulse power supply of the situation that rising edge slow decreasing edge is steeper.
In the present embodiment, multilayer dielectricity barrier discharge low-temperature plasma generation device adopts at least 3 layers of dielectric-slab, formation low temperature plasma makes can both discharge between every two layer medium plate 22, increase low temperature plasma volume and with the area of material surface interactions, thin-film material all can be processed in upper and lower two surfaces of every one deck dielectric-slab 22 that mediate, cover two dielectric-slabs 22 on metal electrode 21 and can, at a surface treatment thin film away from metal electrode 21, can improve quantity and the area of the film of single treatment; Thereby the multilayer dielectricity barrier discharge low-temperature plasma generation device of the present embodiment can obtain the low temperature discharge plasma of large area large volume, the adjusting of the power by driving power source, gas gap distance, working gas kind, gas gap between every two dielectric-slabs obtains evenly good low temperature plasma, and process for thin-film material surface, realize reducing of film surface water contact angle, the hydrophilic improvement of film surface; Multilayer dielectricity barrier discharge low-temperature plasma generation device does not have special harsh requirement to condition of work and driving power source, totally can produce large-area Uniform Discharge, to the equal not damaged of film, medium and electrode, guarantee the matrix characteristics of material, highly versatile.
[embodiment 2]
On the basis of embodiment 1, in the present embodiment, between adjacent media plate 22, use pad 23 to separate, make to be formed with gap between adjacent media plate 22, the height of pad 23 is the width in gap, due to the general rectangular shape of dielectric-slab 22, in the present embodiment, adopt 4 pads 23 to be separately positioned on four angles of adjacent media plate 22.In the present embodiment, by pad 23, separate dielectric-slab 22, the discharge air-gap between dielectric-slab 22 is provided, very convenient, taking off and installing of dielectric-slab 22 is also convenient.
[embodiment 3]
On the basis of embodiment 1 or embodiment 2, in the present embodiment, multilayer dielectricity barrier discharge low-temperature plasma generation device, also comprises gas cylinder 3, resitstance voltage divider 5 and sample resistance 6.
The reative cell of described DBD plasma reactor 2 is provided with air inlet 25 and exhaust outlet 26 and observation window 24: exhaust outlet 26 is for vacuumizing and discharge unwanted gas to reative cell; Air inlet 25 is for passing into reacting gas, and it is connected with gas cylinder 3 by air inlet pipeline, on the air inlet pipeline between air inlet 25 and gas cylinder 3, is also provided with flowmeter 4, in order to change and selection gas flow rate; Observation window 24 is for observing plasma discharge situation and plasma characteristics diagnosis.In practical application, flowmeter quantity, gas cylinder, gaseous species can arrange as required.
The input of described resitstance voltage divider 5 is connected between the high-voltage output end and metal electrode B of power source 1, for measuring the voltage magnitude being applied on reative cell; Metal electrode A is by sample resistance 6 ground connection, for measuring discharge loop electric current.
[embodiment 4]
As shown in Figure 2, on the basis of embodiment 3, in the present embodiment, in reative cell, for 3 layers of dielectric-slab 21 are set, adopt altogether 8 pads 23 that 3 layers of dielectric-slab 21 are separated, form 2 discharge air-gaps; The high 1mm of all pads 23, the gap between adjacent two dielectric-slabs 22 is all 1mm; Metal electrode 22 is selected the dull and stereotyped copper electrode of circle that diameters are 130mm, and electrode edge is used 5mm chamfering, and the tabular copper electrode of circular flat conducts electricity very well, puncturing of border around when electrode edge is used chamfering to avoid discharging.In practical application, the diameter of metal electrode 21 and the parameter of chamfering can be not limited only to above-mentioned, are chosen between 120mm-140mm, and electrode edge chamfering is chosen between 3mm-6mm.
Described dielectric-slab 22 adopts quartz medium plates, high temperature resistant, easily form Uniform Discharge plasma, is suitable for easily occurring the occasion of thread electric discharge.
In the present embodiment, the resistance of sample resistance 6 is 0.2W, and the attenuation multiple of resitstance voltage divider 5 is 40,000 times, and in practical application, the parameter of this sample resistance 6 and resitstance voltage divider 5 also can be adjusted.
The processing thin polymer film of take is below example, and the using method of multilayer dielectricity barrier discharge low-temperature plasma generation device in the present embodiment is described:
Thin polymer film is macromolecule chemical material, comprise one or more in polyethylene, polypropylene, polytetrafluoroethylene, polyimides etc., while adopting multilayer dielectricity barrier discharge low-temperature plasma generation device to process thin polymer film, need suitable condition of work and power source 1.Condition of work comprises the gas gap distance of 22 of reative cell air pressure, working gas kind and flow velocity, temperature, humidity, metal electrode 21 sizes and material, dielectric-slab 22 materials and thickness, dielectric-slabs etc., and working gas can be the mist of air, argon gas, helium, nitrogen and other pure gas or these gases.Under selected condition of work, apply the reative cell that power source 1 drives DBD plasma reactor 2,22 of every adjacent two layer medium plates form stable discharge low-temperature plasmas thin polymer film are processed, and below adopt multilayer dielectricity barrier discharge low-temperature plasma generation device in above-mentioned arbitrary embodiment to carry out surface-treated method to polytetrafluoroethylene film and describe:
In the present embodiment, the power source 1 of employing is the unipolarity submicrosecond level pulse power, and pulse repetition frequency 130Hz ~ 1kHz is adjustable, and voltage magnitude 0 ~-100kV is adjustable, the about 230ns of pulse duration, the about 120ns of rising edge of a pulse; Following DBD plasma reactor 2 energisings are that the reative cell of showing DBD plasma reactor 2 applies this power source 1, and power-off stops applying this power source 1.
The thin polymer film surface treatment method that adopts multilayer dielectricity barrier discharge low-temperature plasma generation device, specifically comprises the following steps:
S1,2 energisings of DBD plasma reactor, between All Media plate 22, form stable discharge low-temperature plasma, particularly: in atmospheric air, apply the reative cell that power source 1 drives DBD plasma reactor 1,22 air-gap separations of dielectric-slab are 1mm, repetition rate 500Hz, applied voltage amplitude is about 40kV, makes 22 of every adjacent two layer medium plates form stable discharge low-temperature plasma;
S2, 2 power-off of DBD plasma reactor, after deenergization, take out dielectric-slab 22, use adhesive tape, pending thin polymer film surrounding is clung on dielectric-slab 22 surfaces, make thin polymer film be positioned at the zone line of dielectric-slab 22, by adjusting tape-stripping method, make there is no bubble between thin polymer film and dielectric-slab 22, entirely be attached to dielectric-slab 22 surfaces, wherein, 2 dielectric-slabs 22 near metal electrode 21 only paste thin polymer film on a surface away from metal electrode 21, thin polymer film is all pasted on 22 two surfaces of all the other dielectric-slabs, and the thin polymer film numbering to diverse location,
S3, the dielectric-slab 22 that posts thin polymer film is put back in the reative cell of DBD plasma reactor 2 to the zone line of the region that makes to be stained with thin polymer film between metal electrode 21 by original position;
S4, DBD plasma reactor 2 are switched on again, and thin polymer film is carried out to surface treatment;
S5, after the selected processing time, take out dielectric-slab 22, now surface treatment finishes, and the one side that thin polymer film is contacted with plasma (not with the one side of dielectric-slab 22 laminatings) makes marks, and takes off thin polymer film.In the present embodiment, the selected processing time of low temperature plasma is 30s, and during processing time 30s, PolytetrafluoroethylFilm Film water contact angle is minimum, and while being greater than or less than 30s, film surface water contact angle all can increase.
Further improvement as said method, before carrying out low temperature plasma surface treatment also before thin polymer film being attached on dielectric-slab 22, pending thin polymer film is carried out to alcohol ultrasonic cleaning 5 minutes, vacuumize 1 hour, the film sample of making certain size is standby, and measures film surface water contact angle and T-shaped peel strength;
While taking off thin polymer film after surface treatment finishes also to the thin polymer film taking off again through alcohol ultrasonic cleaning 5 minutes and vacuumize 1 hour, measure film surface water contact angle and T-shaped peel strength.
Contrast adopts the multilayer dielectricity barrier discharge low-temperature plasma generation device in embodiment 4 as stated above thin polymer film to be processed the PolytetrafluoroethylFilm Film water contact angle of front and back, water contact angle before processing is 118 °, water contact angle after processing is 72 °, after processing, thin polymer film surface water contact angle obviously reduces, and thin polymer film surface hydrophilicity has obtained very large improvement.
Inventor has also carried out changing the contrast test after air-gap separation is processed to above-mentioned surface treatment method of the present utility model: contrast test still adopts the multilayer dielectricity barrier discharge low-temperature plasma generation device in embodiment 4, in plasma processor, be still 3 dielectric-slabs 22, air-gap separation between 3 dielectric-slabs 22 equates, choose 2 polytetrafluoroethylene film a, c, a polytetrafluoroethylene film is attached to respectively the lower surface of the dielectric-slab 22 in the top, the lower surface of a dielectric-slab 22 in the middle of c polytetrafluoroethylene film is attached to, test increases air-gap separation in the situation that other additional conditions are constant, divide 3 change air-gap separations to test, the air-gap separation that 3 tests adopt is respectively 0.5mm, 2mm, 3mm, experimental result is as shown in Figure 3:
In the situation that other additional conditions increase air-gap separation constant in the situation that, the characteristic of discharge plasma is as power, pattern all can change, in Fig. 3, shown that respectively a polytetrafluoroethylene film and the processing of c polytetrafluoroethylene film are by alcohol cleaning with without the average water contact angle after processing in the situation of alcohol cleaning in the DBD of different air gap spacing plasma reactor 1, fill the rectangle frame representative of left oblique line without the water contact angle of a polytetrafluoroethylene film cleaning, fill the rectangle frame representative of right oblique line without the water contact angle of the c polytetrafluoroethylene film cleaning, the rectangle frame of filling horizontal line represents the water contact angle of a polytetrafluoroethylene film after cleaning, the rectangle frame of filling vertical line represents the water contact angle of the c polytetrafluoroethylene film after cleaning, can find out, no matter whether through cleaning, a polytetrafluoroethylene film and c polytetrafluoroethylene are under different air-gap separations, water contact angle after its processing changes little, show in reative cell to be still uniform discharge mode, that is to say and increase dielectric-slab 22 quantity, reducing air-gap separation can't affect greatly the amplification in reative cell, therefore multilayer dielectricity plate 22 can be set in reative cell increases the quantity of each thin polymer film of processing, thereby increase all film sizes of single treatment.From Fig. 3, it can also be seen that, a, c polytetrafluoroethylene film its surface water contact angle after alcohol cleans does not increase too much, illustrate that the film surface water contact angle characteristic after processing is more stable, while increasing dielectric-slab 22 quantity, can not impact the processing of polytetrafluoroethylene film yet, thereby the quantity that multilayer dielectricity plate 22 increases single treatment film can be set, thereby increase all film sizes of single treatment.
Below be only preferred implementation of the present utility model, protection range of the present utility model is also not only confined to above-described embodiment, and all technical schemes belonging under the utility model thinking all belong to protection range of the present utility model.It should be pointed out that for those skilled in the art, the some improvements and modifications not departing under the utility model principle prerequisite, should be considered as protection range of the present utility model.
Claims (7)
1. multilayer dielectricity barrier discharge low-temperature plasma generation device, comprise power source (1) and DBD plasma reactor (2), in the reative cell of described DBD plasma reactor (2), be provided with 2 metal electrodes (21), one of them metal electrode (21) connects the high-voltage output end of power source (1), another metal electrode (21) ground connection, two end faces that 2 metal electrodes (21) are relative are parallel to each other, it is characterized in that, between two metal electrodes (21), be provided with at least 3 layers of dielectric-slab (22), adjacent media plate has gap between (22).
2. multilayer dielectricity barrier discharge low-temperature plasma generation device according to claim 1, is characterized in that, the width in described gap is 0.5mm-3mm.
3. multilayer dielectricity barrier discharge low-temperature plasma generation device according to claim 1, is characterized in that, is provided with pad (23) between adjacent media plate (22).
4. multilayer dielectricity barrier discharge low-temperature plasma generation device according to claim 3, it is characterized in that, the rectangular shape of described dielectric-slab (22), is provided with 4 pads (23) between adjacent media plate (22), 4 pads (23) lay respectively on four angles of dielectric-slab (22).
5. according to the arbitrary described multilayer dielectricity barrier discharge low-temperature plasma generation device of claim 1 to 4, it is characterized in that, described metal electrode (21) is plate electrode or cylindrical electrode.
6. according to the arbitrary described multilayer dielectricity barrier discharge low-temperature plasma generation device of claim 1 to 4, it is characterized in that, described metal electrode (21) is the tabular copper electrode of circular flat, diameter is 120mm-140mm, electrode edge has 3mm-6mm chamfering, and described dielectric-slab (22) adopts quartz medium plate.
7. according to the arbitrary described multilayer dielectricity barrier discharge low-temperature plasma generation device of claim 1 to 4, it is characterized in that, also comprise gas cylinder (3), resitstance voltage divider (5) and sample resistance (6); The reative cell of described DBD plasma reactor (2) is provided with air inlet (25) and exhaust outlet (26), and this air inlet (25) is connected with gas cylinder (3) by air inlet pipeline, is also provided with flowmeter (4) on air inlet pipeline; The input of described resitstance voltage divider (5) be connected to the high-voltage output end of power source (1) and the metal electrode (21) that is connected with the high-voltage output end of power source (1) between; The metal electrode (21) not being connected with the high-voltage output end of power source (1) is by sample resistance (6) ground connection.
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Cited By (9)
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| CN104202897A (en) * | 2014-09-02 | 2014-12-10 | 中国工程物理研究院流体物理研究所 | DBD (Dielectric Barrier Discharge) low temperature plasma generating device and polymer film surface treatment method |
| CN108529898A (en) * | 2018-06-25 | 2018-09-14 | 苏州大学 | The device of wide cut corona treatment glass |
| CN109121277A (en) * | 2018-08-23 | 2019-01-01 | 国网天津市电力公司电力科学研究院 | A kind of dielectric barrier discharge system and method improving rubber surface hydrophilicity |
| US10504703B2 (en) | 2016-12-29 | 2019-12-10 | Industrial Technology Research Institute | Plasma treatment apparatus |
| CN110708851A (en) * | 2019-09-29 | 2020-01-17 | 上海交通大学 | Large-gap uniform dielectric barrier discharge plasma surface treatment device under atmospheric pressure |
| CN111139101A (en) * | 2018-11-05 | 2020-05-12 | 中国科学院电工研究所 | Heavy oil hydrogenation system |
| CN111821829A (en) * | 2020-06-10 | 2020-10-27 | 安吉润风空气净化科技有限公司 | Novel plasma discharge structure unit and reactor |
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| CN114286488A (en) * | 2021-12-30 | 2022-04-05 | 南京工业大学 | Atmospheric pressure large-scale DBD material modification device based on gas circuit modularization |
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| CN104202897A (en) * | 2014-09-02 | 2014-12-10 | 中国工程物理研究院流体物理研究所 | DBD (Dielectric Barrier Discharge) low temperature plasma generating device and polymer film surface treatment method |
| CN104202897B (en) * | 2014-09-02 | 2017-01-11 | 中国工程物理研究院流体物理研究所 | DBD (Dielectric Barrier Discharge) low temperature plasma generating device and polymer film surface treatment method |
| US10504703B2 (en) | 2016-12-29 | 2019-12-10 | Industrial Technology Research Institute | Plasma treatment apparatus |
| CN108529898A (en) * | 2018-06-25 | 2018-09-14 | 苏州大学 | The device of wide cut corona treatment glass |
| CN108529898B (en) * | 2018-06-25 | 2023-10-13 | 苏州大学 | Device for treating glass by wide-width plasma |
| CN109121277A (en) * | 2018-08-23 | 2019-01-01 | 国网天津市电力公司电力科学研究院 | A kind of dielectric barrier discharge system and method improving rubber surface hydrophilicity |
| CN111139101A (en) * | 2018-11-05 | 2020-05-12 | 中国科学院电工研究所 | Heavy oil hydrogenation system |
| CN110708851A (en) * | 2019-09-29 | 2020-01-17 | 上海交通大学 | Large-gap uniform dielectric barrier discharge plasma surface treatment device under atmospheric pressure |
| CN114128408A (en) * | 2020-02-27 | 2022-03-01 | 东芝三菱电机产业系统株式会社 | Active gas generating device |
| CN111821829A (en) * | 2020-06-10 | 2020-10-27 | 安吉润风空气净化科技有限公司 | Novel plasma discharge structure unit and reactor |
| CN114286488A (en) * | 2021-12-30 | 2022-04-05 | 南京工业大学 | Atmospheric pressure large-scale DBD material modification device based on gas circuit modularization |
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