CN204011438U - Silicon bidirectional trigger diode - Google Patents
Silicon bidirectional trigger diode Download PDFInfo
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- CN204011438U CN204011438U CN201420358382.0U CN201420358382U CN204011438U CN 204011438 U CN204011438 U CN 204011438U CN 201420358382 U CN201420358382 U CN 201420358382U CN 204011438 U CN204011438 U CN 204011438U
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- pin
- diode
- bidirectional trigger
- annular groove
- anodal
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Abstract
The utility model relates to a kind of semiconductor device, especially a kind of silicon bidirectional trigger diode.A kind of silicon bidirectional trigger diode, comprise diode body, two ends of described diode body lead to two pins vertically, diode body plastic packaging is in epoxy resin pipe, described pin comprises anodal pin and negative pole pin, and described anodal pin upper punch is pressed with annular groove, and described negative pole pin is bent into when parallel with anodal pin, the bottom of negative pole pin flushes with the annular groove of anodal pin, and the degree of depth of described annular groove is 1/2 of anodal pin radius.The utility model symmetry is good, by improving existing silicon bidirectional trigger diode is structural, makes vertical braider reduce device, but does not affect braid effect, and this improves simultaneously person easy to use also distinguishes the positive and negative terminal of diode.
Description
Technical field
The utility model relates to a kind of semiconductor device, especially a kind of silicon bidirectional trigger diode.
Background technology
Silicon bidirectional trigger diode belongs to three-decker, has symmetric two end semiconductor device, can be equivalent to the polar-symmetric NPN transistor of open base, emitter and current collection.Be commonly used to trigger bidirectional triode thyristor, in circuit, make the purposes such as overvoltage protection.The almost full symmetric of forward and reverse voltage-current characteristic of silicon bidirectional trigger diode.When the making alive U of device two ends institute is during lower than forward breakover voltage V (B0), device is high-impedance state.When U>V (B0), pipe punctures conducting and enters negative differential resistance region.Same in the time that U is greater than reverse snapback voltage V (BR), pipe can enter negative differential resistance region equally.
At present, silicon bidirectional trigger diode is all to attach it on printed circuit board (PCB) on streamline, after pin bending in the past, diode body is parallel with printed circuit board (PCB), not very desirable for heat radiation like this, so need that diode body is vertical with printed circuit board (PCB) to be placed, wherein a part of reason is also because therefore electronic package demand has occurred on market becoming by equipment the machine standing to braid again after the horizontal braid of diode.During due to horizontal braid, two pins of diode are equally long, therefore, in the time becoming vertical braid, need to reduce the length of a pin, on this machine, there is a special device to subtract pin, whether can improve in the structure to diode before, make vertical braider reduce device, but do not affect braid effect; In addition, some are to be directly printed on diode body for the positive and negative terminals of former diode, and some do not have, and are not very convenient for using.
Utility model content
The technical problems to be solved in the utility model is: based on the problems referred to above, provide a kind of silicon bidirectional trigger diode.
The utility model solves the technical scheme that its technical problem adopts: a kind of silicon bidirectional trigger diode, comprise diode body, two ends of described diode body lead to two pins vertically, diode body plastic packaging is in epoxy resin pipe, described pin comprises anodal pin and negative pole pin, described anodal pin upper punch is pressed with annular groove, described negative pole pin is bent into when parallel with anodal pin, the bottom of negative pole pin flushes with the annular groove of anodal pin, and the degree of depth of described annular groove is 1/2 of anodal pin radius.
Further, the Breakover Voltage Symmetry < 0.5V of described diode body.Breakover Voltage Symmetry is less, illustrates that the symmetry of diode body is good.
Further, on described pin, seal the paper braid that has 25mm.
The beneficial effects of the utility model are: the utility model symmetry is good, by improving existing silicon bidirectional trigger diode is structural, make vertical braider reduce device, but do not affect braid effect, this improves simultaneously person easy to use also distinguishes the positive and negative terminal of diode.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is further illustrated.
Fig. 1 is structural representation of the present utility model.
Fig. 2 is testing circuit figure of the present utility model.
In figure: 1. diode body, 2. epoxy resin pipe, 3. anodal pin, 4. negative pole pin, 5. annular groove, 6. paper braid.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, and basic structure of the present utility model is only described in a schematic way, and therefore it only shows the formation relevant with the utility model.
As shown in Figure 1, a kind of silicon bidirectional trigger diode, comprise diode body 1, the Breakover Voltage Symmetry < 0.5V of diode body 1, two ends of diode body 1 lead to two pins vertically, diode body 1 plastic packaging is in epoxy resin pipe 2, pin comprises anodal pin 3 and negative pole pin 4, anodal pin 3 upper punches are pressed with annular groove 5, negative pole pin 4 is bent into when parallel with anodal pin 3, the bottom of negative pole pin 4 flushes with the annular groove 5 of anodal pin 3, the degree of depth of annular groove 5 is 1/2 of anodal pin 3 radiuses, on pin, envelope has the paper braid 6 of 25mm.
When needs are when in the present embodiment, silicon bidirectional trigger diode becomes vertical braid, in the time of de-paper braid 6, anodal pin 3 is fractureed at annular groove 5 places, efficient and convenient; In addition, owing to thering is annular groove 5 on anodal pin 3, distinguish so easy to use.
Almost full symmetric of the forward and reverse voltage-current characteristic of bidirectional trigger diode, when the making alive U of device two ends institute is during lower than forward breakover voltage V (B0), device is high-impedance state.When U>V (B0), diode body 1 punctures conducting and enters negative differential resistance region.Same in the time that U is greater than reverse snapback voltage V (BR), diode body 1 can enter negative differential resistance region equally.Breakover Voltage Symmetry represents with △ V (B).△V(B)＝V(B0)-V(BR)。General △ V (B) should be less than 2 volts.
The forward breakover voltage value of bidirectional trigger diode generally has Three Estate: 20-60V, 100-150V, 200-250V.Because breakover voltage is all greater than 20V, can use the forward and reverse survey bidirectional diode of universal instrument power block, indicator all should motionless (RX10k), but can't determine that it is good completely.Detect its quality, and the power supply of the direct voltage that is greater than 250V can be provided, when detection, not being greater than by the electric current of pipe is 5mA, very convenient with the detection of transistor dielectric strength tester.As do not have, available megohmmeter is measured (positive and negative respectively once) by shown in Fig. 2, and what voltage was large deducts the value that obtains △ V (B) that voltage is little.
In addition, the desk lamp light adjusting circuit that the element such as bidirectional trigger diode and bidirectional triode thyristor forms.By the potentiometer in regulating circuit, can change the angle of flow of bidirectional triode thyristor, realize continuous light tuning thereby change by the electric current (mean value) of bulb.If being changed to electric iron, under blanket, bulb also can realize continuous temp. adjustable.
Taking above-mentioned foundation desirable embodiment of the present utility model as enlightenment, by above-mentioned description, relevant staff can, not departing from the scope of this utility model technological thought, carry out various change and amendment completely.The technical scope of this utility model is not limited to the content on specification, must determine its technical scope according to claim scope.
Claims (3)
1. a silicon bidirectional trigger diode, comprise diode body (1), two ends of described diode body (1) lead to two pins vertically, diode body (1) plastic packaging is in epoxy resin pipe (2), it is characterized in that: described pin comprises anodal pin (3) and negative pole pin (4), described anodal pin (3) upper punch is pressed with annular groove (5), described negative pole pin (4) is bent into when parallel with anodal pin (3), the bottom of negative pole pin (4) flushes with the annular groove (5) of anodal pin (3), the degree of depth of described annular groove (5) is 1/2 of anodal pin (3) radius.
2. silicon bidirectional trigger diode according to claim 1, is characterized in that: the Breakover Voltage Symmetry < 0.5V of described diode body (1).
3. silicon bidirectional trigger diode according to claim 1, is characterized in that: on described pin, envelope has the paper braid (6) of 25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420358382.0U CN204011438U (en) | 2014-06-30 | 2014-06-30 | Silicon bidirectional trigger diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420358382.0U CN204011438U (en) | 2014-06-30 | 2014-06-30 | Silicon bidirectional trigger diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204011438U true CN204011438U (en) | 2014-12-10 |
Family
ID=52051397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420358382.0U Expired - Fee Related CN204011438U (en) | 2014-06-30 | 2014-06-30 | Silicon bidirectional trigger diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204011438U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584704A (en) * | 2020-05-19 | 2020-08-25 | 赵光宇 | Light emitting diode |
-
2014
- 2014-06-30 CN CN201420358382.0U patent/CN204011438U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584704A (en) * | 2020-05-19 | 2020-08-25 | 赵光宇 | Light emitting diode |
| CN111584704B (en) * | 2020-05-19 | 2021-12-17 | 杨侃 | Light emitting diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141210 Termination date: 20150630 |
|
| EXPY | Termination of patent right or utility model |