CN203982242U - A kind of control circuit of voltage stabilizer saturation current - Google Patents
A kind of control circuit of voltage stabilizer saturation current Download PDFInfo
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- CN203982242U CN203982242U CN201320772915.5U CN201320772915U CN203982242U CN 203982242 U CN203982242 U CN 203982242U CN 201320772915 U CN201320772915 U CN 201320772915U CN 203982242 U CN203982242 U CN 203982242U
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Abstract
A control circuit for voltage stabilizer saturation current, the PNP output transistor of employing vertical configuration, this transistor is arranged on feedback control circuit as a Linear Control element, and feedback control circuit is arranged on the substrate of vertical stratification.An input end of differential amplifier is coupled to a reference voltage source, and another input end is coupled to resitstance voltage divider by feedback circuit, and this resitstance voltage divider is connected between common node and the output terminal of voltage stabilizer.Surface NPN parasitic-PNP transistor being fused to by physical reactions and thermal effect, for the variation of induction transistor output saturation degree, and is driven the base current exceeding to guide to FEEDBACK CONTROL node by another circuit.FEEDBACK CONTROL node cushions excessive driving by reducing gain and the bandwidth of driving amplifier, thereby guarantees that backfeed loop is not needing under the condition of extra frequency compensation element, and the operation of its all saturation stages all has good stability.
Description
Technical field:
The present invention relates to voltage stabilizer field, more particularly, relate to when output transistor is saturated in the voltage stabilizer of vertical stratification the control method of current level and circuit.
Background technology:
Voltage stabilizer integrated circuit (IC) adopts lateral PNP structure.Figure 1 shows that the schematic diagram of a voltage stabilizer 10.A necessary operating performance of voltage stabilizer is, when the output load of voltage stabilizer is zero or too small, and voltage source electromotive force is while approaching required voltage stabilizer output valve, prevents from vibrating from the voltage stabilizer quiescent current of voltage source.In this case, voltage source is battery, for example the acceleration oscillation due to discharge of battery.
As shown in Figure 1, in operation, transistor 12 drives external loading (not shown) by the first collector 14, and this non-essential resistance is connected between output port 16 and public port.When output transistor 12 is saturated, transistor 18 conductings, thus make transistor 32 increase enough bias currents, the conversely conduction level of delay crystal pipe 22.Transistor 18 is transversary, and is embedded in the structure of output transistor 12, thereby is conducive to detect accurately when reaching capacity.Resistance 34 is for the clamping level of limit transistor 32.Resistance 36 is arranged on the base bias of transistor 32.
The base current of output transistor 12 is by transistor 24, the conduction level of delay crystal pipe 22, thereby the saturation depth of regulation output transistor 12.
To for providing feedback signal, backfeed loop be described further capacitor 26 herein.In addition, the second collector 28 of transistor 12 provides a standby backfeed loop, and this backfeed loop is by the saturation depth of transistor 30 and transistor 20 regulation output transistors 12.
A feedback that the voltage divider being comprised of resistance 38 and 40 provides from Voltage-output port 16.This feedback link is to the inverting input 42 of control amplifier 44.The in-phase input end 46 of control amplifier 44 is connected to reference voltage 48, and wherein the current potential of reference is used for arranging the required current potential of Voltage-output port 16.The base current of transistor 22 is controlled in the output 50 of control amplifier 44 to a certain extent, and this electric current passes through transistor 24 and resistance 52 successively, and the base current of output transistor 12 is further set.Current source 54 discharges leakage current, and when transistor 22 is cut-off, this leakage current makes output transistor 12 conductings.
Because the horizontal voltage stabilizer 10 of vertical stratification does not have collector in parallel, thus be necessary to provide a kind of Method and circuits, for controlling the increase of operating current of the saturated output transistor of integrated circuit voltage regulator of vertical stratification.
Summary of the invention:
First object of the present invention is that the integrated circuit voltage regulator for vertical stratification provides a kind of circuit, when voltage source current potential approaches stabilizer output voltage, and in load under less or non-loaded condition, the increase of the electric current of deboost source voltage stabilizer.
Second object of the present invention is that the integrated circuit voltage regulator for vertical stratification provides a kind of circuit, and this circuit has stability, and there is no special frequency compensation.
The 3rd object of the present invention is that the integrated circuit voltage regulator for vertical stratification provides a kind of circuit, and its feedback-induced device does not need extra modular space.
Technical solution of the present invention:
The circuit that these and other object of the present invention is configured has as follows reached.Voltage stabilizer adopts the PNP output transistor of vertical stratification, in the feedback control circuit of this transistor in substrate as a Linear Control element.This substrate can be contained in an integrated circuit.An input end of control amplifier is coupled to a reference voltage source, and the backfeed loop being comprised of resitstance voltage divider is coupled in another input, and wherein resitstance voltage divider is connected between public port and the output of voltage stabilizer.
A parasitic NPN transistor, induction output transistor reaches capacity, and most of excessive base current of controlling node for drive feedback of resetting, and wherein NPN transistor is passed physics and thermal response is fused in the structure of PNP output transistor.FEEDBACK CONTROL node postpones unnecessary driver by reducing gain and the bandwidth of driver amplifier, thereby guarantees there be good stablizing at all saturation stages, and does not need extra frequency compensation element.
The present invention proposes a kind of control circuit of voltage stabilizer saturation current, it is characterized in that: a voltage regulator circuit, comprise: the PNP transistor that is arranged on the vertical stratification in substrate, transistor has emitter, base stage and a single collector, and emitter-coupled is to voltage source, and collector coupled is to load; For the reference unit of required load current potential is set, this current potential is provided by the transistorized collector of PNP; Feedback assembly, its effect is inductive load current potential, and produces a control signal, this signal is controlled its collector current by the transistorized base stage of PNP of vertical stratification; A saturation induction device produces feedback signal by feedback assembly when transistor is saturated.
Further, this circuit also comprises a constant pressure source.
Further, voltage regulator circuit also comprises a NPN transistor, and its base-emitter district effect is identical with the transistorized collector-base of the PNP region of vertical stratification.
Further, saturation induction device comprises a NPN transistor being embedded in substrate, and is connected to PNP transistor; Feedback assembly comprises: differential amplifier and driving transistors, and wherein the first input end of differential amplifier is coupled to reference terminal, and the second input end is coupled to the collector of the output transistor of vertical stratification; The transistor of vertical stratification comprises a PNP transistor; The collector coupled of driving transistors is to the transistorized base stage of vertical stratification.
Further, the PNP transistor by the vertical stratification in substrate is coupled to load by voltage source, and this transistor has emitter, base stage and a single collector, and emitter-coupled is to voltage source, and collector coupled is to load.
Further, the transistor by vertical stratification is coupled to voltage source in load, and this transistor is arranged in substrate, and has emitter, base stage and a single collector, and emitter-coupled is to voltage source, and collector coupled is to load; The voltage at inductive load two ends, and with reference voltage comparison, wherein reference voltage is required reference voltage; The emitter of the parasitic transistor of thermal coupling is also as the transistorized base stage of vertical stratification.
Above-described the features and advantages of the present invention will be described in figure below, and according to claim, parts or element identical in each figure represent with similar Reference numeral.
Contrast patent documentation: CN201149666Y regulator control circuit 200820055379.6
Accompanying drawing explanation:
Fig. 1 is the schematic diagram of prior art voltage regulator circuit.
Fig. 2 is simple version combination block and the schematic diagram of voltage regulator circuit of the present invention.
Fig. 3 is the schematic diagram of first example of voltage regulator circuit of the present invention.
Fig. 4 is the schematic diagram of second example of voltage regulator circuit of the present invention.
Fig. 5 is the schematic diagram of the 3rd example of voltage regulator circuit of the present invention.
Fig. 6 is the PNP output transistor of the vertical stratification corresponding with the present invention in the integrated circuit of part and the cut-open view of parasitic NPN transistor.
Embodiment:
Fig. 2 is the simple version of voltage regulator circuit of the present invention.Voltage stabilizer 100 comprises PNP output transistor 102, and the emitter of transistor 102 is connected to voltage source 104, and collector is connected to the base stage of Voltage-output port 106, parasitic transistor 108 and each node of resistance 110.Load (not shown) is connected between Voltage-output port 106 and common port (be also referred to as " " current potential).Resistance 110 and 112 forms a voltage divider, for the in-phase input end 114 of control amplifier 116 provides feedback signal.Reference voltage 118, for port one 06 required voltage is set, and is connected to the inverting input 120 of control amplifier 116.
An amplifier biasing current circuit 122, the form of block diagram of take in Fig. 2 shows that (being described in further detail) provides major control as the biasing of control amplifier 116 herein.Induction current I
sENSEcollector by the bias current circuit 122 of amplifier by parasitic transistor 108 produces.
Operation under equilibrium state, due to the base-emitter node of output transistor 102 forward bias normally, flow into the emitter of output transistor 102 from the electric current of voltage source 104, then from the collector output of output transistor 102.
While supposing that the output port 106 of voltage and the nominal load of the external loading between public port and resistance 110 and 112 be can not ignore, most of collector current of output transistor 102 will flow through external loading.
In preferred example of the present invention, resistance 110 and 112 value are certain, control the collector current of output transistor 102.The base stage of parasitic NPN transistor 108 controls the electric current of the collector of output transistor 102 equally.
In further details, output transistor 102, as a Linear Control element, within the specific limits, provides substantially invariable current potential at output port 106 places of voltage, although all electric current I
lOADall by load, absorbed.
For example, when certain level is arrived in the current potential decline (, battery voltage source decay) of voltage source 104, the input state of saturation of the output transistor 102 making, control amplifier 116 is by increasing the base current I of driver output transistor 102
dRIVEmaintain output voltage 106.At I
lOADin higher situation, due to I
dRIVEmust be enough large, the complete output of ability driver output transistor 102, if open between 106 and have enough potential difference (PD) at voltage source 104 and Voltage-output, integrated operation mutation current will be much larger than normal quiescent levels.Therefore, I
dRIVEin saturation region operation in highest level, and and I
lOADamplitude irrelevant.In the situation that load is less, surge amplitude when working current surge amplitude is greater than static state.
But parasitic transistor 108 can suppress in the voltage-regulation ability of circuit 100 this surge when weakening.Concrete operations are as follows, and when output transistor 102 is unsaturated, parasitic NPN transistor 108 does not have forward bias.Yet when output transistor 102 reaches capacity, the base bias electromotive force of parasitic NPN transistor 108 rises, and higher than emitter electromotive force.This causes parasitic NPN transistor 108 forward bias, and makes transistor 108 conductings, thus the ideal base drive current I that resets unnecessary
dRIVE, make its bias current circuit that flows to amplifier 122.Control amplifier 116 starts to replace part from the base current of output transistor 102 with the emitter current of transistor 108.Amplifier biasing current circuit 122 responds negative feedback by delaying the electric current of control amplifier 106, makes by this method I
dRIVEbe reduced to an average level.The lagging current of control amplifier 116 causes reducing of loop bandwidth and gain, thereby guarantees that whole feedback control loop all has good stability in saturated all stages.
Be illustrated in figure 3 first example, i.e. the schematic diagram of the voltage stabilizer 20 of transverse structure.It is more detailed that voltage stabilizer 200 is described than voltage stabilizer 100.When voltage stabilizer turn-offs, the resistance 204 that passes through of the base potential of output transistor 102 bleeds off, and take and guarantees that its collector electromotive force is as zero.
For control amplifier 116, comprise a pair of PNP transistor 206 and 208, and the base stage 120 of transistor 206 is as in-phase input end, the base stage 114 of transistor 208 is as inverting input.Because the electromotive force at in-phase input end 120 places is (being illustrated in figure 3 1.23V) of fixing, transistor 206 and 208 and the base potential of a pair of NPN transistor 210 and 212 co-controlling transistors 214, response resistance 110 and 112 node current potential.This controls again the electric current in the collector that flows through driving transistors 214 conversely.
Bias current control circuit 202 comprises a PNP transistor 212 and resistance 216.In example of the present invention shown in Fig. 3, the bias voltage V of the base stage of the value of resistance 216, transistor 212
bIASvalue be all selectively, make tail current I
tAILreach certain particular value.Tail current inflow transistor 206 and 208 emitter, and determine to a certain extent the level of drive current, bandwidth and gain, wherein drive current is provided by driving transistors 214, and bandwidth and gain are provided by control amplifier 116.
In operation, when output transistor 102 is saturated, and the load on output port 106 is not exist or very hour, parasitic NPN transistor 108 stops the quiescent current from voltage source 104 to increase sharply.Driving transistors 214 as required, is guided to the base current of output transistor 102, thereby guarantees the voltage constant at Voltage-output port 106 places.When the current potential of voltage source 104 is apparently higher than the required voltage of output port 106, and the outflow electric current of port one 06 is minimum or while being zero, the voltage at resistance 204 two ends approximates the base-emitter voltage of output transistor 102, and the electric current that flows through resistance 204 is very little.
When the current potential of voltage source 104 declines, output transistor 102 reaches capacity.Accordingly, driving transistors 214 is attempted to pass through by increasing collector current, to keep the voltage of output port 106 constant.Yet, most of extra electric current, emitter from parasitic NPN transistor 108, rather than from the base stage of output transistor 102, electric current ramp metering amplifier 116, and this electric current produces larger voltage at resistance 216 two ends, thereby provides negative feedback to driving transistors 214, weakens the conducting of driving transistors 214.
According to the present invention, Figure 4 shows that the detailed schematic diagram of a meticulousr voltage stabilizer 300.Voltage stabilizer 300 exists with the form of an integrated circuit.Compare with Fig. 3, Fig. 4 circuit comprises that one provides the bias current circuit 302 of dynamic bias for control amplifier 304.
In control amplifier 304, transistor 306 in the base stage of driving transistors 214 as voltage clamping, thereby when output transistor 102 unsaturation, the amount of limit transistor 214 available electric currents.In addition, resistance 308 has further limited the emitter current of driving transistors 214.In example of the present invention, the base potential of transistor 306 is set to 450 millivolts.Yet transistor 306 and resistance 308, when parasitic NPN transistor 108 starts conducting, are not controlled the base stage of driving transistors 214.On the contrary, the base stage of driving transistors 214 is controlled by backfeed loop by differential transistor 206 and 208, and its backfeed loop comprises transistor 108.
In bias current circuit 302, transistor 310 is roughly corresponding with the transistor 212 in Fig. 3, and they provide a constant bias current for control amplifier 304.Yet in the example of Fig. 4, transistor 310 is worked together with transistor 312, jointly control amplifier 304 is carried out to dynamic bias.The electric current that flows through transistor 312 is subject to the current affects of output transistor 102, but due to the voltage drop at resistance 216 and resistance 314 two ends, the base-emitter voltage of transistor 312 is along with the base-emitter voltage of output transistor 102 increases.Therefore the electric current that, flows through transistor 312 has the build phase of a slower logarithmic form.Yet this electric current is corresponding with the growth phase of electric current that flows through output transistor 102.
Again mention bias current sources 302, in example of the present invention, forward bias diode 316 and current source 318, be used to provide the electric current of 16 microamperes, in the base stage of transistor 310, sets up forward bias.Yet, when voltage source 104 is switched on to voltage stabilizer 300 for the first time, transistor 312 not conductings, transistor 310 is operated in a fixing bias voltage, and bias voltage makes driving transistors 214 conductings.Thereby make also conducting of output transistor 102, and provide a current potential to Voltage-output port 106.What the adaptive-biased ratio being provided by transistor 312 in this, was provided by output transistor 102 preponderates.Specifically, transistor 312 starts conducting, and absorbs the electric current that flows through resistance 216 and 314.By resistance 216 and 314 voltage drops that produce, started to reduce total base-emitter voltage of transistor 310.
A very little electric capacity in parallel with resistance 110 320 provides frequency compensation, with the instability that prevents from lagging behind and causing due to the phase place of transistor 208 base stage stray capacitances.Electric capacity 322 and resistance 324 are connected between transistor 208 and 214 collector, and provide main frequency compensation to differential amplifier 304.Resistance 326 is connected between two nodes, one is the emitter node of transistor 212 and 214, another is the node between resistance 308 and the emitter of transistor 210, and the effect of resistance 326 is that the induction current that the electric current by absorbing to external loading is directly proportional improves load regulation.Corresponding, resistance 326 is introduced a little electromotive force at the emitter of transistor 210 and 212, and the current potential of bucking voltage output port 106 declines.Resistance 328 is connected between transistor 310 and 312 emitter, to reduce by the electric current of transistor 310.
Figure 5 shows that the 3rd example of voltage regulator circuit of the present invention, compare with Fig. 4, PNP transistor 306 is substituted by NPN transistor 330.
In the example of Fig. 4, the clamp voltage level being provided by transistor 306 depends primarily on the bias potential of the base stage of transistor 306.Yet in the example shown in Fig. 5, the clamp voltage level being provided by transistor 330 is arranged by the base-emitter voltage of transistor 330.Therefore, this current potential is arranged on the inside of control amplifier 304, rather than in the example shown in Fig. 4 300 like that externally.
Figure 6 shows that the independently structural drawing of integrated circuit 400, this integrated circuit comprises the parasitic NPN transistor 108 after vertical PNP output transistor 102 and merging.The base current of vertical PNP output transistor 102 flows through structure 400 by shown in arrow in Fig. 6 401.Vertical pnp transistor is better than the transistor of those transverse structures aspect electrical characteristics.Output transistor 102 in Fig. 6 and parasitic NPN transistor 108 are based upon an independently n region.As previously described, only have when output transistor 102 is saturated parasitic NPN transistor 108 just conductings.In addition, due to parasitic NPN transistor 108 thermal couplings be physically coupled to the architecture of output transistor 102, thereby need one for responding to the threshold value of the saturation point of output transistor 102.The saturation point that is specially transistor 102 depends on temperature and doping content.Because the collector of output transistor 102 is identical with base stage and the emitter region of parasitic NPN transistor 108 respectively with base region, temperature or alloy difference between output transistor 102 and NPN parasitic transistor 108 all can be ignored.Therefore,, along with the variation of the temperature of output transistor, the transconductance characteristic of NPN parasitic transistor is corresponding with the saturation point of output transistor.
P type substrate 402 comprises that epitaxial loayer 416 and up/down are respectively 424 and 422 P type isolation diffusion district.N
-diffusion region 404 has been manufactured one for to p
+the groove of diffusion region 406 electrical isolation, wherein p
+diffusion region 406 is at epitaxial loayer 416, n
-between territory, 404He p type island region, diffusion region 422,424.P
-the diffusing, doping agent of 425You top, district isolated area 422 forms.P
-district 425 forms the collector of PNP output transistor 102 and the base stage of NPN type induction transistor 108.P
+diffusion region 412 is conducive to the resistive interconnections between metal level and reduces PNP collector resistance.P
-n in district 425
-diffusion region 420 forms the base stage of output transistor 102 and the emitter of induction transistor 108.N
+diffusion region 418 is conducive to the resistive interconnections between metal level.P
+diffusion region 410 forms the emitter of output transistor 102.N
+the resistive that diffusion region 414 is conducive to epitaxial loayer 416 connects.The current potential biasing of epitaxial loayer 416 is higher than p
-the current potential biasing in district 425, thus guarantee a reverse bias node, and as the collector of induction transistor 108.There is no extra diffusion, and the manufacture craft of induction transistor 108 is also without any need for modification.
In the example shown in Fig. 4 and Fig. 5, in the making of integrated circuit shown in the value following table of some elements.Regulation unit of resistance is ohm, and unit of capacity is pico farad:
| Numbering | Type | Value |
| 110 | Resistance | 180K |
| 113 | Resistance | 60K |
| 204 | Resistance | 100K |
| 216 | Resistance | 600 |
| 308 | Resistance | 200 |
| 314 | Resistance | 1.5K |
| 320 | Electric capacity | 2 |
| 322 | Electric capacity | 5 |
| 324 | Resistance | 15K |
From the foregoing, the invention provides a kind of control method and circuit of voltage stabilizer saturation current of new vertical stratification.Although the present invention is being described aspect PNP output transistor and NPN parasitic transistor, also can carry out complementary operation (be that NPN device replaces PNP device, vice versa).According to invention principle, the present invention is unrestricted, limited by claim of the present invention.
Claims (6)
1. the control circuit of a voltage stabilizer saturation current, it is characterized in that: a voltage regulator circuit, comprising: be arranged on the PNP transistor of the vertical stratification in substrate, transistor has emitter, base stage and a single collector, and emitter-coupled is to voltage source, and collector coupled is to load; For the reference unit of required load current potential is set, this current potential is provided by the transistorized collector of PNP; Feedback assembly, its effect is inductive load current potential, and produces a control signal, this signal is controlled its collector current by the transistorized base stage of PNP of vertical stratification; A saturation induction device produces feedback signal by feedback assembly when transistor is saturated.
2. the control circuit of a kind of voltage stabilizer saturation current according to claim 1, is characterized in that: this circuit also comprises a constant pressure source.
3. the control circuit of a kind of voltage stabilizer saturation current according to claim 1, is characterized in that: voltage regulator circuit also comprises a NPN transistor, and its base-emitter district effect is identical with the transistorized collector-base of the PNP region of vertical stratification.
4. the control circuit of a kind of voltage stabilizer saturation current according to claim 1, is characterized in that: saturation induction device comprises a NPN transistor being embedded in substrate, and is connected to PNP transistor; Feedback assembly comprises: differential amplifier and driving transistors, and wherein the first input end of differential amplifier is coupled to reference terminal, and the second input end is coupled to the collector of the output transistor of vertical stratification; The transistor of vertical stratification comprises a PNP transistor; The collector coupled of driving transistors is to the transistorized base stage of vertical stratification.
5. the control circuit of a kind of voltage stabilizer saturation current according to claim 1, it is characterized in that: the PNP transistor by the vertical stratification in substrate is coupled to load by voltage source, this transistor has emitter, base stage and a single collector, and emitter-coupled is to voltage source, and collector coupled is to load.
6. the control circuit of a kind of voltage stabilizer saturation current according to claim 1, it is characterized in that: the transistor by vertical stratification is coupled to voltage source in load, this transistor is arranged in substrate, and there is emitter, base stage and a single collector, emitter-coupled is to voltage source, and collector coupled is to load; The voltage at inductive load two ends, and with reference voltage comparison, wherein reference voltage is required reference voltage; The emitter of the parasitic transistor of thermal coupling is also as the transistorized base stage of vertical stratification.
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| CN201320772915.5U CN203982242U (en) | 2013-11-28 | 2013-11-28 | A kind of control circuit of voltage stabilizer saturation current |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103631302A (en) * | 2013-11-28 | 2014-03-12 | 苏州贝克微电子有限公司 | Control circuit for voltage stabilizer saturation current |
| CN111869070A (en) * | 2018-04-16 | 2020-10-30 | 三电汽车部件株式会社 | Power conversion device |
-
2013
- 2013-11-28 CN CN201320772915.5U patent/CN203982242U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103631302A (en) * | 2013-11-28 | 2014-03-12 | 苏州贝克微电子有限公司 | Control circuit for voltage stabilizer saturation current |
| CN111869070A (en) * | 2018-04-16 | 2020-10-30 | 三电汽车部件株式会社 | Power conversion device |
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Address after: 215000 Building 1, No. 150, Jici Road, science and Technology City, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Baker Microelectronics Co.,Ltd. Address before: Room 1404, building 3, No. 209, Zhuyuan Road, high tech Zone, Suzhou, Jiangsu 215011 Patentee before: SUZHOU BAKER MICROELECTRONICS Co.,Ltd. |
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