CN203967091U - Wafer level packaging structure - Google Patents

Abstract

A kind of wafer level packaging structure, comprising: wafer to be wrapped, and described wafer to be wrapped comprises some chip areas; Be positioned at weld pad and the photo-sensitive cell on described wafer to be wrapped chip area surface; Be covered in the first embankment structure on described weld pad surface; The cap being oppositely arranged with described wafer to be wrapped surface, and the first embankment structural top surface contacts with cap surface; Be positioned at the second embankment structure on described cap surface, cap and wafer to be wrapped are by described the second embankment structure fixed engagement, described the second embankment structure is between the first embankment structure and photo-sensitive cell, and described the second embankment structure is positioned at the both sides of photo-sensitive cell.The wafer level packaging structure that provides of the utility model is provided, packaging technology finally make between cap and wafer to be wrapped, separate, and do not injure crystal grain, make the chip performance that forms after packaging technology more superior.

Description

Wafer level packaging structure

Technical field

The utility model relates to semiconductor packaging, particularly a kind of wafer level packaging structure.

Background technology

Image sensor is a kind of transducer that can experience extraneous light and convert thereof into the signal of telecommunication.After image sensor dice completes, thereby then form packaged image sensor by image sensor dice is carried out to a series of packaging technologies, for the various electronic equipments such as digital camera, Digital Video etc.

Traditional image sensor package method normally adopts Bonding (Wire Bonding) to encapsulate, but along with the develop rapidly of integrated circuit, longer lead-in wire makes product size cannot reach desirable requirement, therefore, wafer-level packaging (WLP:Wafer Level Package) replaces wire bond package gradually becomes a kind of comparatively conventional method for packing.Wafer level packaging is the technology of full wafer wafer being carried out cutting into after packaging and testing again single chips, and wafer-level packaging has advantages of following: can process multiple wafers, packaging efficiency is high simultaneously; Before cutting, carry out the test of full wafer wafer, reduced the test process in encapsulation, reduce testing cost; Packaged chip has light, little, short, thin advantage.

While utilizing existing Wafer level packaging to encapsulate image sensor, in order to protect the photo-sensitive cell of image sensor injury-free and pollute, protect its photo-sensitive cell thereby conventionally need to form cap at wafer upper surface in encapsulation process.Even but cap is transparent, still can affect the transmission of light, make the photo-sensitive cell of image sensor not smooth with transmitting to the acceptance of light, thereby affect the overall performance of chip.Therefore, last in packaging technology, also needs described cap and crystal grain to be peeled away again.

But while utilizing existing wafer level packaging structure to encapsulate, after in advance cap and crystal grain being peeled away, the technique such as etching, cleaning in encapsulation process can cause certain damage to crystal grain again subsequently, and the performance of image sensor is caused to harmful effect.Therefore, need to provide a kind of novel wafer level packaging structure, avoid peeling off cap crystal grain is caused to damage.

Utility model content

The problem that the utility model solves is to provide a kind of wafer level packaging structure, adopts described wafer level packaging structure to carry out packaging technology, after packaging technology completes, in the situation that avoiding crystal grain to cause damage, realizes separating of cap and intergranule.

For addressing the above problem, the utility model provides a kind of wafer level packaging structure, comprising: wafer to be wrapped, and described wafer to be wrapped comprises some chip areas; Be positioned at weld pad and the photo-sensitive cell on described wafer to be wrapped chip area surface; The cap being oppositely arranged with described wafer to be wrapped surface, and the first embankment structural top surface contacts with cap surface; Be positioned at the second embankment structure on described cap surface, cap and wafer to be wrapped are by described the second embankment structure fixed engagement, described the second embankment structure is between the first embankment structure and photo-sensitive cell, and described the second embankment structure is positioned at the both sides of photo-sensitive cell.

Optionally, described the second embankment structure comprises the first sub-embankment structure and the second sub-embankment structure, and wherein, the first sub-embankment structure is positioned at a side of photo-sensitive cell, the second sub-embankment structure is positioned at the opposite side of photo-sensitive cell, and the width of the first sub-embankment structure is greater than the width of the second sub-embankment structure.

Optionally, also comprise: the measurements of the chest, waist and hips embankment structure that is positioned at wafer to be wrapped chip area surface, the one-tenth-value thickness 1/10 of described measurements of the chest, waist and hips embankment structure equates with the one-tenth-value thickness 1/10 of the first embankment structure, and described measurements of the chest, waist and hips embankment structure is between photo-sensitive cell and the second embankment structure, and described measurements of the chest, waist and hips embankment structure top surface contacts with cap surface.

Optionally, described the second embankment structural top surface has adhesive phase, and adhesive phase and the one-tenth-value thickness 1/10 sum of the second embankment structure and the one-tenth-value thickness 1/10 of the first embankment structure equate between the two, described the second embankment structural top surface with wafer to be wrapped surface by adhesive phase fixed engagement.

Optionally, described wafer to be wrapped comprises the Cutting Road region between chip area, and described the first embankment structure is covered in the chip area surface between weld pad surface, Cutting Road region surface and weld pad and Cutting Road region.

Optionally, described the second embankment structure, measurements of the chest, waist and hips embankment structure and cap are structure as a whole.

Optionally, in described cap, there is opening, and described opening exposes the second embankment structural top surface of photo-sensitive cell one side.

Optionally, described opening is positioned at the first sub-embankment structural top, and exposes the top surface of the first sub-embankment structure.

Optionally, the width of described opening is more than or equal to the width of the first sub-embankment structure, and the one-tenth-value thickness 1/10 of described the first sub-embankment structure is less than the one-tenth-value thickness 1/10 of the second sub-embankment structure.

Compared with prior art, the technical solution of the utility model has the following advantages:

The utility model embodiment provides the wafer level packaging structure of structure superior performance, wherein, provides the first embankment structure that is positioned at weld pad surface, is positioned at the second embankment structure on cap surface; And cap and wafer to be wrapped be only by the second embankment structure fixed engagement, and the second embankment structure is positioned at the both sides of photo-sensitive cell, and the first embankment structural top surface only contacts with cap surface but fixed engagement not.The wafer level packaging structure that provides of the utility model is provided, ensures between wafer to be wrapped and cap, to be subject to the supporting role of the first embankment structure and the second embankment structure in encapsulation process; And the wafer level packaging structure that the utility model embodiment provides is the follow-up platform that provides good that encapsulates, make last in packaging technology, realizing the object of removing cap in the situation that not injuring crystal grain becomes possibility.

Further, in the utility model embodiment, in cap, there is opening, and described opening exposes the second embankment structural top surface of photo-sensitive cell one side, make cap and cut after wafer to be wrapped between lose one of medium of fixed engagement (being positioned at the second embankment structure of photo-sensitive cell one side), only retain the second embankment structure that is positioned at photo-sensitive cell opposite side make cap with cut after wafer to be wrapped fixed engagement, the fixed engagement strength decreased between the wafer to be wrapped after making cap and being cut; By apply certain active force to cap, can make the wafer to be wrapped surface of the second embankment structure from cut come off, wafer to be wrapped is not being caused under the condition of unnecessary damage, between wafer to be wrapped after making cap and being cut, separate, improve the performance of the crystal grain forming after cutting.

Further, in the utility model embodiment, the second embankment structure comprises the first sub-embankment structure and the second sub-embankment structure, the first sub-embankment structure is positioned at a side of photo-sensitive cell, the second sub-embankment structure is positioned at the opposite side of photo-sensitive cell, and the width of the first sub-embankment structure is greater than the width of the second sub-embankment structure.Ensure on the one hand, before cutting forms crystal grain, between wafer to be wrapped and cap, to there is stronger fixed engagement intensity, prevented from forming before crystal grain and separating between cap and wafer to be wrapped in cutting, thereby avoid photo-sensitive cell to pollute or damage; On the other hand, after cutting forms crystal grain, only make cap and intergranule fixed engagement by the second less sub-embankment structure of width, thereby make the fixed engagement intensity of cap and intergranule as much as possible little, thereby further reduce the technology difficulty that cap is separated by applying the mode of external force with intergranule.

Further, the utility model embodiment also provides the measurements of the chest, waist and hips embankment structure that is positioned at wafer to be wrapped chip area first surface, described measurements of the chest, waist and hips embankment structure top surface contacts with cap surface, further improves the mechanical strength between cap and wafer to be wrapped; And; because measurements of the chest, waist and hips embankment structure is between photo-sensitive cell and the first sub-embankment structure and between photo-sensitive cell and the second sub-embankment structure; the pollution bringing while the first sub-embankment structure, the second sub-embankment structure being carried out to PROCESS FOR TREATMENT in barrier encapsulation technical process, plays the effect of protection photo-sensitive cell.

Further again, the first embankment structure is covered in the chip area surface between weld pad surface, Cutting Road region surface and weld pad and Cutting Road region, and the first embankment structural base surface has larger contact area with wafer to be wrapped; And the first embankment structural top surface contacts with cap surface, therefore, between the first embankment structural top surface and cap, also there is larger contact area, make wafer to be wrapped Cutting Road region there is enough mechanical strengths, therefore, in the time carrying out packaging technology, can carry out etching, precut processing to wafer to be wrapped Cutting Road region the second face, improve encapsulation performance and letter patience.

Brief description of the drawings

The schematic flow sheet of the method for packing that Fig. 1 provides for an embodiment;

The cross-sectional view of the wafer level packaging structure encapsulation process that Fig. 2 to Figure 13 provides for the utility model embodiment.

Embodiment

From background technology, prior art, after to image sensor package, need to be peeled away cap and crystal grain, and how, in the situation that not injuring crystal grain, it is the problem of needing at present solution badly that cap and crystal grain are departed from.

Wafer level packaging structure and method for packing for image sensor are studied, the method for packing that proposition comprises the following steps: step S1, provide wafer to be wrapped, described wafer to be wrapped comprises chip area and Cutting Road region, wafer to be wrapped comprise first surface with relative with first surface second, and be formed with weld pad and photo-sensitive cell at the chip area of described encapsulation wafer first surface; Step S2, formation are positioned at the embankment structure of weld pad surface and Cutting Road region surface; The cap that step S3, formation and described wafer to be wrapped are oppositely arranged, described cap is by embankment structure and wafer to be wrapped fixed engagement; Step S4, attenuate wafer to be wrapped second, second of wafer to be wrapped after attenuate forms through hole, and described via bottoms exposes weld pad; Step S5, form at described through-hole side wall and bottom the metal level being electrically connected with weld pad; Step S6, along Cutting Road region to wafer to be wrapped cut form crystal grain, remove cap simultaneously.

In above-mentioned method for packing, embankment structure, as the supporting construction of weld pad, prevents that weld pad is cracked; And embankment structure and cap form cavity, protection photo-sensitive cell is not subject to the damage of packaging technology.Owing to there being the technique such as etching, grinding in packaging technology, in order to improve the mechanical strength between cap and wafer to be wrapped, prevent from occurring that wafer to be wrapped is cracked or cap is cracked in potting process, embankment structure will accomplish to cover the Cutting Road region surface between weld pad surface and adjacent welding-pad conventionally, make embankment structure there is wider width to reduce cavity ratio, thereby improve the mechanical strength between cap and wafer to be wrapped.

But, when embankment structure covers the Cutting Road region surface between weld pad surface and adjacent welding-pad, embankment structure width is obviously greater than the width in Cutting Road region, wafer to be wrapped is being cut after formation crystal grain, residual embankment structure is still positioned at grain surface, and cap is also still positioned at adjacent residual embankment structural top, affect the performance of crystal grain.

Carrying out further research for method for packing finds, form after crystal grain at cutting wafer to be wrapped, if the fixed engagement weakened between crystal grain and cap,, by apply certain External Force Acting to cap, realizes the object that cap separates with intergranule.

For this reason, the utility model embodiment provides a kind of wafer level packaging structure and method for packing, and wherein, wafer level packaging structure comprises: be covered in the first embankment structure on weld pad surface, be positioned at second embankment structure and the measurements of the chest, waist and hips embankment structure on cap surface; By the second embankment structure and measurements of the chest, waist and hips embankment structure by cap and wafer to be wrapped fixed engagement.The wafer level packaging structure that adopts the utility model to provide encapsulates, and forms after crystal grain at cutting wafer to be wrapped, is not damaging under the prerequisite of crystal grain, can make to separate between crystal grain and cap.

For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiment of the utility model is described in detail.

The utility model embodiment provides a kind of method for packing, the cross-sectional view of the wafer level packaging structure encapsulation process that Fig. 2 to Figure 13 provides for the utility model embodiment.

Please refer to Fig. 2, wafer to be wrapped 100 is provided, described wafer to be wrapped 100 comprises some chip areas 110 and the Cutting Road region 120 between chip area 110.

Described wafer to be wrapped 100 comprises the some chip area 110 of matrix arrangement and Cutting Road regions 120 between chip area 110 of being, when follow-up cutting wafer to be wrapped 100, along described Cutting Road region 120, wafer to be wrapped 100 is cut into several discrete crystal grain, an image sensor dice of the corresponding formation of each crystal grain.Described wafer to be wrapped 100 comprise first surface with relative with described first surface second, wafer to be wrapped 100 surfaces that are formed with weld pad and photo-sensitive cell are first surface, the surface relative with first surface is second, and described second is pending attenuate and wafer to be wrapped 100 surfaces that form through hole.

The first surface of described wafer to be wrapped 100 chip areas 110 has weld pad 101 and photo-sensitive cell 102.In described photo-sensitive cell 102 regions, be formed with image sensor unit and the associated circuit being connected with image sensor unit, utilize described image sensor unit that extraneous light is received and convert to electrical signal, by described associated circuit, electrical signal is passed to weld pad 101, metal level, the solder-bump of recycling weld pad 101 and follow-up formation send electrical signal to other circuit.General, described photo-sensitive cell 102 tops are higher than weld pad 101 tops.

In the present embodiment, for the ease of wiring, photo-sensitive cell 102 is positioned at the centre position of chip area 110, weld pad 101 is positioned at the marginal position of chip area 110, the follow-up position in described weld pad 101 correspondences forms the through hole that runs through described wafer to be wrapped 100 thickness, utilizes through hole that the weld pad 101 that is positioned at wafer to be wrapped 100 first surfaces is connected with the follow-up solder-bump electricity second formation.

It should be noted that, in other embodiments, the position of weld pad and photo-sensitive cell can be adjusted flexibly according to the requirement of actual process.

In the present embodiment, the weld pad 101 of different chip areas 110 is independent setting; In other embodiments, can form the weld pad being connected at adjacent chip area, the weld pad forming is crossed over Cutting Road region, this be because: can cut hold after encapsulation completes in Cutting Road region, cut the opening of weld pad in described leap Cutting Road region, can not affect the electric property of sensing chip.

After forming weld pad 101 and photo-sensitive cell 102, also comprise step: the first surface at described wafer to be wrapped 100 chip areas 110 forms the metal interconnect structure that described weld pad 101 is connected with photo-sensitive cell 102 electricity.

Please refer to Fig. 3, form the first embankment structure 103 that is covered in chip area 110 surfaces between described weld pad 101 surfaces, 120 surfaces, Cutting Road region and weld pad 101 and Cutting Road region 120.

Form owing to carrying out etching in subsequent technique in the position of described weld pad 101 correspondences the through hole that runs through wafer to be wrapped 100, and etching technics can produce effect of stress to weld pad 101, therefore the first embankment structure 103 that described weld pad 101 surfaces form is as the etching supporting construction of weld pad 101, and described the first embankment structure 103 need to cover weld pad 101 surfaces completely, and, rear extended meeting forms cap to form cavity, described cavity forms by the first embankment structure 103, in order to reduce cavity ratio (cavity ratio refers to the ratio of the height and the width of cavity), improve the mechanical strength between cap and wafer to be wrapped 100, prevent that cap or wafer to be wrapped 100 are cracked in encapsulation process, need to increase the width of the first embankment structure 103 contacting with wafer to be wrapped 100 first surfaces, therefore, in the present embodiment, the the first embankment structure 103 forming is covered in weld pad 101 surfaces, 120 surfaces, Cutting Road region, and chip area 110 surfaces between weld pad 101 and Cutting Road region 120.

It should be noted that, in other embodiments, form the first embankment structure that is covered in weld pad surface.

The material of described the first embankment structure 103 is photoresist or resin, and wherein, resin is epoxy resin or acrylic resin etc.

In the present embodiment, the material of described the first embankment structure 103 is photoresist, and the technique that forms described the first embankment structure 103 is wet film technique or dry film technique.

As an embodiment, the processing step that adopts wet film technique to form described the first embankment structure 103 comprises: adopt spin coating technique or spraying coating process to form initial photoresist layer at the first surface of described wafer to be wrapped 100, and described initial photoresist layer is toasted to processing; Described initial photoresist layer is carried out to exposure imaging processing, and chip area 110 surfaces between weld pad 101 surfaces, 120 surfaces, Cutting Road region and weld pad 101 and Cutting Road region 120 form the first embankment structure 103.

As another embodiment, the processing step that adopts dry film technique to form described the first embankment structure 103 comprises: the first surface by initial photoresist layer dry film pasting at described wafer to be wrapped 100; The described first initial photoresist layer is carried out to exposure imaging processing, and chip area 110 surfaces between weld pad 101 surfaces, 120 surfaces, Cutting Road region and weld pad 101 and Cutting Road region 120 form the first embankment structure 103.

In other embodiments, when the material of the first embankment structure is resin, the technique that forms the first embankment structure can be resin typography.

Please continue to refer to Fig. 3, chip area 110 first surfaces between the first embankment structure 103 and photo-sensitive cell 102 form measurements of the chest, waist and hips embankment structure 104.

The material of described measurements of the chest, waist and hips embankment structure 104 is photoresist or resin, and wherein, resin is epoxy resin or acrylic resin.

Form acting as of measurements of the chest, waist and hips embankment structure 104: one, further reduce cavity ratio, thereby further improve the mechanical strength between cap and wafer to be wrapped 100, prevent that wafer to be wrapped 100 from breaking in follow-up potting process; Two, measurements of the chest, waist and hips embankment structure 104 is positioned at chip area 110 surfaces near photo-sensitive cell 102, stop that the pollution that follow-up cutting technique brings falls in the region at photo-sensitive cell 102 places, thereby avoid follow-up cutting technique that photo-sensitive cell 102 is polluted or damaged; Three, after forming measurements of the chest, waist and hips embankment structure 104, the position that can orient more accurately the second embankment structure of follow-up formation.

In order to make measurements of the chest, waist and hips embankment structure 104 and the first embankment structure 103 all play the effect of supporting cap, the one-tenth-value thickness 1/10 of described measurements of the chest, waist and hips embankment structure 104 equates with the one-tenth-value thickness 1/10 of the first embankment structure 103.

As an embodiment, after forming the first embankment structure 103, form described measurements of the chest, waist and hips embankment structure 104; As another embodiment, before forming the first embankment structure 103, form described measurements of the chest, waist and hips embankment structure 104.

In the present embodiment, in order to improve semiconductor packages efficiency, shorten the semiconductor production cycle, in forming the first embankment structure 103, form measurements of the chest, waist and hips embankment structure 104, that is, described the first embankment structure 103 forms in processing step with measurements of the chest, waist and hips embankment structure 104.

Chip area 110 first surface looping grooves between the first embankment structure 103, measurements of the chest, waist and hips embankment structure 104 and the first embankment structure 103 and measurements of the chest, waist and hips embankment structure 104 in same chip region 110.

Please refer to Fig. 4, cap 105 is provided, form the second embankment structure on described cap 105 surfaces, the position of described the second embankment structure is corresponding to the position between the first embankment structure 103 and photo-sensitive cell 102, and the position of described the second embankment structure corresponds respectively to the position of photo-sensitive cell 102 relative both sides.

Described cap 105 for wafer to be wrapped 100 on the first embankment structure 103, measurements of the chest, waist and hips embankment structure 104 position of photo-sensitive cell 102 correspondences is divided into a cavity, thereby protection photo-sensitive cell 102 can not caused damage or pollute techniques such as attenuate that wafer to be wrapped 100 carried out, etching, depositions by follow-up.

The material of described cap 105 can be transparent material, can be also opaque material, comprises unorganic glass, polymethyl methacrylate or silicon etc., and described glass can be doped with the simple glass of impurity or not doped with the quartz glass of impurity.

The follow-up second embankment structure of passing through is by the first surface fixed engagement of cap 105 and wafer to be wrapped 100, make the position of photo-sensitive cell 102 correspondences form cavity, therefore, the position of described the second embankment structure is corresponding to the position between the first embankment structure 103 and photo-sensitive cell 102, and the position of described the second embankment structure corresponds respectively to the position of photo-sensitive cell 102 relative both sides.

In the present embodiment, the second embankment structure comprises the first sub-embankment structure 106 and the second sub-embankment structure 107, wherein, the first sub-embankment structure 106 is positioned at a side of photo-sensitive cell 102, the second sub-embankment structure 107 is positioned at the opposite side of photo-sensitive cell 102, and the width of the first sub-embankment structure 106 is greater than the width of the second sub-embankment structure 107.The benefit arranging is like this: follow-up after wafer to be wrapped 100 is carried out to the techniques such as attenuate, etching, can cut the first sub-embankment structure 106 of removing segment thickness, make to lose one of medium of fixed engagement between cap 105 and wafer to be wrapped 100, be to be no longer fixed joint by the first sub-embankment structure 106 between cap 105 and wafer to be wrapped 100, only leave the second sub-embankment structure 107 that width is less as the fixed engagement medium between cap and wafer to be wrapped 100; Form after crystal grain in cutting, because the width of the second sub-embankment structure 107 is less, therefore the fixed engagement intensity of cap and intergranule a little less than, by apply certain active force to cap, can make the second sub-embankment structure 107 come off from the first surface of wafer to be wrapped 100, thereby reach the effect of removing cap in the situation that not injuring crystal grain.

The one-tenth-value thickness 1/10 of described the first sub-embankment structure 106 and the second sub-embankment structure 107 is less than or equal to the one-tenth-value thickness 1/10 of the first embankment structure 103.

As an embodiment, described the first sub-embankment structure 106 and the second sub-embankment structure 107 form by dry film technique, the first sub-embankment structure 106 and the second sub-embankment structure 107 top surfaces have certain viscosity, follow-uply can make the first sub-embankment structure 106 top surfaces, the second sub-embankment structure 107 top surfaces and wafer to be wrapped 100 first surface fixed engagement by Direct Bonding, therefore, the one-tenth-value thickness 1/10 of the first sub-embankment structure 106 and the second sub-embankment structure 107 equals the first embankment structure 103.

As another embodiment, the first sub-embankment structure 106 and the second sub-embankment structure 107 top surfaces do not have viscosity or viscosity excessively a little less than, follow-up by forming adhesive phase at the first sub-embankment structure 106 top surfaces, the second sub-embankment structure 107 top surfaces, thereby make cap 105 and wafer to be wrapped 100 fixed engagement, therefore, the one-tenth-value thickness 1/10 of the first sub-embankment structure 106 and the second sub-embankment structure 107 is less than the one-tenth-value thickness 1/10 of the first embankment structure 103.

The material of described the first sub-embankment structure 106 and the second sub-embankment structure 107 is photoresist, resin, polymethyl methacrylate, unorganic glass or silicon.

As an embodiment, the material of described the first sub-embankment structure 106 and the second sub-embankment structure 107 is photoresist or resin, the technique that forms the first sub-embankment structure 106 and the second sub-embankment structure 107 is dry film technique or wet film technique, specifically can be with reference to the processing step that forms the first embankment structure 103; Concrete, in the time that the material of the first sub-embankment structure 106 and the second sub-embankment structure 107 is photoresist, form described the first sub-embankment structure 106 and the second sub-embankment structure 107 by photoetching process.

As another embodiment, described the first sub-embankment structure 106, when the second sub-embankment structure 107 and cap 105 are structure as a whole, , when described the first sub-embankment structure 106 is identical with the material of cap 105 with the material of the second sub-embankment structure 107, the material of the first sub-embankment structure 106 and the second sub-embankment structure 107 is polymethyl methacrylate, unorganic glass or silicon, the method that forms cap 105 is: initial cap is provided, described initial cap is monoblock polymethyl methacrylate, unorganic glass or silicon base, described initial cap is processed to processing, processing the method for processing comprises: Radium art or etching technics, form the cap 105 that surface has the first sub-embankment structure 106 and the second sub-embankment structure 107, the first sub-embankment structure 106, the second sub-embankment structure 107 and cap 105 are structure as a whole.

In other embodiments, when wafer to be wrapped chip area first surface is not formed with measurements of the chest, waist and hips embankment structure, the position of the first sub-embankment structure and the second sub-embankment structure is corresponding to the position between the first embankment structure and photo-sensitive cell, and described the first sub-embankment structure, the second sub-embankment structure lay respectively at the both sides that photo-sensitive cell is relative.

It should be noted that, in the present embodiment, comprise that taking the second embankment structure the first sub-embankment structure and the second sub-embankment structure that width is different do exemplary illustrated as example, make the difficulty of follow-up removal cap lower; In other embodiments, the second embankment structure also can comprise the first sub-embankment structure and the second sub-embankment structure that width is identical.

Please continue to refer to Fig. 4, form adhesive phase 108 at described the first sub-embankment structure 106 top surfaces and the second sub-embankment structure 107 top surfaces.

The first sub-embankment structure 106 and the second sub-embankment structure 107 be the first surface fixed engagement with wafer to be wrapped 100 by adhesive phase 108, after fixed engagement, between the one-tenth-value thickness 1/10 sum of the one-tenth-value thickness 1/10 sum of the first sub-embankment structure 106 and adhesive phase 108, the second sub-embankment structure 107 and adhesive phase 108, the one-tenth-value thickness 1/10 three of the first embankment structure 103, equate.

Please refer to Fig. 5, by described the second embankment structure by cap 105 and wafer to be wrapped 100 fixed engagement, and after fixed engagement, described the second embankment structure is between the first embankment structure 103 and photo-sensitive cell 102, and described the second embankment structure is positioned at the both sides of photo-sensitive cell 102, the first embankment structure 103 top surfaces contact with cap 105 surfaces.

In the present embodiment, the second embankment structure comprises the first sub-embankment structure 106 and the second sub-embankment structure 107, by described the first sub-embankment structure 106 and the second sub-embankment structure 107 by cap 105 and wafer to be wrapped 100 fixed engagement.

In the present embodiment, by cap 105 and wafer to be wrapped 100 fixed engagement, in the time of fixed engagement, guarantee the center superposition of cap 105 and wafer to be wrapped 100 by adhesive phase 108; And, after fixed engagement, described the first sub-embankment structure 106, the second sub-embankment structure 107 are between the first embankment structure 103 and photo-sensitive cell 102, and described the first sub-embankment structure 106 is positioned at a side of photo-sensitive cell 102, and the second sub-embankment structure 107 is positioned at the opposite side of photo-sensitive cell; The first sub-embankment structure 106, the second sub-embankment structure 107 and wafer to be wrapped 100 first surfaces are bonding, and the first embankment structure 103, measurements of the chest, waist and hips embankment structure 104 top surfaces contact with cap 105 surfaces but be non-caked.

After cap 105 and wafer to be wrapped 100 fixed engagement, the first embankment structure 103 is covered in weld pad 101 surfaces completely, 120 surfaces, Cutting Road region, and chip area 110 surfaces between weld pad 101 and Cutting Road region 120, and in Cutting Road region 120, the area of the first embankment structure 103 top surfaces and cap 105 Surface Contacts, the area that the first embankment structure 103 lower surface contact with wafer to be wrapped 100 first surfaces equates, make the wafer to be wrapped 100 that the first embankment structure 103 is Cutting Road region 120 that enough mechanical support intensity is provided, therefore, it is follow-up when chip area 110 is carried out to encapsulation process, can carry out etching to the wafer to be wrapped in Cutting Road region 120 120 second faces, precut and wait processing, thereby improve encapsulation performance and the letter patience of encapsulation.

And, due to after fixed engagement, the first sub-embankment structure 106 top surfaces, the second sub-embankment structure 107 top surfaces and wafer to be wrapped 100 first surfaces are bonding, it is non-caked and the first embankment structure 103 top surfaces, measurements of the chest, waist and hips embankment structure 104 top surfaces contact with cap 105, follow-up after removing the first sub-embankment structure 106 of segment thickness, only make wafer to be wrapped 100 and cap 105 fixed engagement by the second sub-embankment structure 107, the fixed engagement strength decreased between wafer to be wrapped 100 and cap 105; After cutting wafer to be wrapped 100 forms single crystal grain, by applying certain active force to cap 105, can make the second sub-embankment structure 107 come off from grain surface, reach the object that cap 105 separates with intergranule.

In other embodiments, the first sub-embankment structure and the second sub-embankment structure form by dry film technique, the first sub-embankment structure and the second sub-embankment structural top have certain viscosity, by pressing cap and wafer to be wrapped, the first sub-embankment structural top surface, the second sub-embankment structural top surface are fixed and are engaged by the mode of Direct Bonding with wafer to be wrapped first surface.It should be noted that, while being fixed joint by Direct Bonding mode, between the one-tenth-value thickness 1/10 three of the one-tenth-value thickness 1/10 of the first sub-embankment structure, the one-tenth-value thickness 1/10 of the second sub-embankment structure, the first embankment structure, equate.

Please refer to Fig. 6, the second face of described wafer to be wrapped 100 is carried out to attenuate; The second face to wafer to be wrapped after attenuate 100 carries out etching, forms the through hole 109 that runs through described wafer to be wrapped 100, and described through hole 109 exposes the weld pad 101 of wafer to be wrapped 100 first surfaces.

Concrete, described wafer to be wrapped 100 second faces are thinned to predetermined thickness, described reduction process can be mechanical lapping or cmp etc.Wafer to be wrapped 100 is thinned to after predetermined thickness, by photoetching process and dry etch process, the wafer to be wrapped 100 of weld pad 101 correspondence positions is carried out to etching and form through hole 109, described through hole 109 bottom-exposed go out weld pad 101.

Due in Cutting Road region 120, the area that the first embankment structure 103 lower surface contact with wafer to be wrapped 100 first surfaces, the first embankment structure 103 top surfaces equate with the area of cap 105 Surface Contacts, make Cutting Road region 120 there is larger mechanical strength, the support strength that Cutting Road region 120 has is larger, therefore, when the wafer to be wrapped 100 to weld pad 101 correspondence positions carries out etching, also can carry out etching to the wafer to be wrapped of the segment thickness of Cutting Road region 120 correspondences 100, thereby wafer to be wrapped 100 attenuation in Cutting Road region 120, reduce follow-up cutting wafer to be wrapped 100 required clipping time, and the problem of avoiding wafer to be wrapped 100 to cause wafer to be wrapped 100 to break because clipping time is long.

And, follow-up before Cutting Road region is cut, if can precut processing to Cutting Road region the second face, be conducive to improve packaging efficiency, improve encapsulation performance and letter patience; Described precut processing need to be carried out under Cutting Road region has the condition of larger support strength, prevents from causing the problem of Cutting Road regional breakdown in precut processing procedure.From aforementioned analysis, in the present embodiment, Cutting Road region 120 has larger support strength, can avoid the problem that causes Cutting Road region 120 to break in precut processing procedure, therefore, in the present embodiment, after forming through hole 109, also comprise step: wafer to be wrapped 100 Cutting Road region 120 second faces are precut to processing.

It should be noted that, in other embodiments, wafer to be wrapped Cutting Road region the second face is precut to the processing step of processing and also can after follow-up formation metal level, carry out.

Please refer to Fig. 7, form insulating barrier 111 second of described wafer to be wrapped 100 and the sidewall of through hole 109, and expose the weld pad 101 of through hole 108 bottoms.

The second face that described insulating barrier 111 is wafer to be wrapped 100 provides electricity isolation, and can play the effect of 100 second of protection wafers to be wrapped.The material of described insulating barrier 111 is the insulating material such as silica, silicon nitride or insulating resin.In the present embodiment, the material of described insulating barrier 111 is silica.

As an embodiment, the formation step of described insulating barrier 111 comprises: form initial insulating barrier second of described wafer to be wrapped 100 and bottom and the sidewall of through hole 109; Form patterned photoresist layer at described initial surface of insulating layer, described patterned photoresist layer exposes the initial insulating barrier of through hole 109 bottoms; Taking described patterned photoresist layer as mask, etching is removed the initial insulating barrier that is positioned at through hole 109 bottoms, exposes the weld pad 101 of through hole 109 bottoms, forms second and the insulating barrier 111 of through hole 109 sidewalls being positioned at wafer to be wrapped 100.

Please refer to Fig. 8, at described insulating barrier 111 forming metal layer on surfaces 112, and described metal level 112 is connected with weld pad 101.

The material of described metal level 112 mainly comprises Cu, Al or their alloy.In the present embodiment, described metal level 112 is connected with weld pad 101 lower surfaces (lower surface is the surface that weld pad 101 contacts with wafer to be wrapped 100 first surfaces), in other embodiments, metal level also can contact with the sidewall of weld pad, ensures to be electrically connected between metal level and weld pad.

As an embodiment, the formation step of described metal level 112 comprises: form the metal film that is covered in described insulating barrier 111 surfaces and through hole 109 bottoms; Form patterned photoresist layer in described metallic film surface; Taking described patterned photoresist layer as metal film described in mask etching, form the metal level 112 that is positioned at insulating barrier 111 surfaces and weld pad 101 surfaces.

Please continue to refer to Fig. 8, form solder-bump 113 on described metal level 112 surfaces.

The material of described solder-bump 113 is scolding tin.In the present embodiment, before forming solder-bump 113, form protective layer 114 at metal level 112 and insulating barrier 111 surfaces, the material of described protective layer 114 is insulating material, plays the not oxidized effect of protection metal level 112.

As an embodiment; after forming protective layer 114; described in employing etching technics etching, protective layer 114, to form the opening that exposes part metals layer 112 surface, is filled full electric conducting material to form solder-bump 113 in described opening, and described solder-bump 113 is electrically connected with metal level 112.

As another embodiment; after forming protective layer 114; adopt exposure imaging technique to expose the opening on part metals layer 112 surface in the interior formation of described protective layer 114, in described opening, fill full electric conducting material to form the solder-bump 113 being electrically connected with metal level 112.

Please refer to Fig. 9, remove the second embankment structure of the segment thickness that is positioned at photo-sensitive cell 102 1 sides, and the width of the second embankment structure of described removal is identical with the width of removing front the second embankment structure.

In the present embodiment, the second embankment structure comprises the first sub-embankment structure 106 and the second sub-embankment structure 107, and the width of the first sub-embankment structure 106 is greater than the width of the second sub-embankment structure 107, in order to reduce the difficulty of follow-up removal cap 105 as far as possible, in the present embodiment, the method for removing the second embankment structure of the segment thickness that is positioned at photo-sensitive cell 102 1 sides is: the first sub-embankment structure 106 of removing segment thickness.

In the present embodiment, because the width of the first sub-embankment structure 106 of removing is identical with the width of removing front the first sub-embankment structure 106, therefore, no longer by the first sub-embankment structure 106 fixed engagement, only bonding by the second sub-embankment structure 107 between cap 105 and wafer to be wrapped 100 between cap 105 and wafer to be wrapped 100.

In the present embodiment, in order to reduce the difficulty of cutting technique, improve the efficiency of packaging technology, in removing the first sub-embankment structure 106 of segment thickness, removal is positioned at the cap 105 directly over the first sub-embankment structure 106, the width of cap 105 that cutting is removed equates with the width of the first sub-embankment structure 106, makes in cap 105, to have opening 150.

Adopt the technique of slicer cutting or laser cutting to cut described the first sub-embankment structure 106.

Remove in the technical process of the first sub-embankment structure 106 of segment thickness in cutting, cutting technique inevitably can bring impurity, and measurements of the chest, waist and hips embankment structure 104 stops that described impurity falls in the region at photo-sensitive cell 102 places, prevent that impurity from polluting or damaging photo-sensitive cell 102.

It should be noted that, in other embodiments, when the first sub-embankment structure 106 of segment thickness is removed in cutting, also can cut measurements of the chest, waist and hips embankment structure 104 and the first embankment structure 103 of removing the partial width adjacent with the first sub-embankment structure 106, as shown in figure 10, make cutting technique there is larger cutting process window, lower to the required precision of cutting technique, thus reduce cutting technique difficulty.

Please refer to Figure 11, along Cutting Road region 120, described wafer to be wrapped 100 is cut and forms crystal grain 130, in cutting wafer to be wrapped 100, cut cap 105.

The technique that described wafer to be wrapped 100 is cut is slicer cutting or laser cutting.Because laser cutting has less kerf width, improve the accuracy of cutting technique, in the present embodiment, adopt laser to cut wafer to be wrapped 100.

Form in the process of crystal grain 130 in cutting, between cap 105 and crystal grain 130 by the second sub-embankment structure 107 fixed engagement, therefore, photo-sensitive cell 102 still, in cavity, ensures that the not cut technique that forms crystal grain 130 of photo-sensitive cell 102 pollutes or damages.

It should be noted that, because the first embankment structure 103 tops contact with cap 105 but non-caked, after cutting forms crystal grain 130, cap 105 Automatic-fallings of partial width, the cap 105 of the partial width of described Automatic-falling is: the cap 105 of the partial width directly over the first embankment structure 103 of adjacent the first sub-embankment structure 106.

Please refer to Figure 12, at the another side (cap 105 top surfaces) relative with cap 105 surfaces, adhesive tape layer 140 is set.

As an embodiment, described adhesive tape layer 140 is covered in cap 105 top surfaces completely; As another embodiment, described adhesive tape layer 140 cover part cap 105 top surface.

Follow-up by applying active force to adhesive tape layer 140 to remove the cap 105 boning with crystal grain 130 in order to facilitate, in the present embodiment, described adhesive tape layer 140, except being covered in cap 105 top surfaces, also has the adhesive tape layer 140 of certain length not fit with cap 105.

It should be noted that, in other embodiments, also can, before cutting wafer to be wrapped forms crystal grain, at cap top surface, adhesive tape layer be set.

Please refer to Figure 13, by described adhesive tape layer 140 is applied active force and provides active force to cap 105, the second sub-embankment structure 107 is come off from crystal grain 130 surfaces, between cap 105 and crystal grain 130, separate.

In the present embodiment, form after crystal grain 130 in cutting, crystal grain 130 only passes through the second sub-embankment structure 107 fixed engagement with cap 105; Because the width of the second sub-embankment structure 107 is less than the width of the first sub-embankment structure 106, there is the second sub-embankment structure 107 of less width by setting, make to there is relatively little adhesion strength between the second sub-embankment structure 107 and crystal grain 130; Therefore, apply active force by adhesive tape layer 140 to cap 105, can make the second sub-embankment structure 107 come off from crystal grain 130 surfaces, reach the object separating between cap 105 and crystal grain 130, avoided adopting other techniques to remove the damage that cap 105 may cause crystal grain 130.

As an embodiment, the direction of described active force is the direction perpendicular with the plane at cap 105 places.

Accordingly, the present embodiment also provides a kind of wafer level packaging structure, please refer to Fig. 5, comprising:

Wafer to be wrapped 100, described wafer to be wrapped 100 comprises some chip areas 110 and the Cutting Road region 120 between chip area 110, and described wafer to be wrapped 100 comprise first surface with relative with described first surface second;

Be positioned at weld pad 101 and the photo-sensitive cell 102 of described wafer to be wrapped 100 chip area 110 first surfaces;

Be covered in the first embankment structure 103 on described weld pad 101 surfaces;

The cap 105 being oppositely arranged with described wafer to be wrapped 100 first surfaces, and the first embankment structure 103 top surfaces contact with cap 105 surfaces;

Be positioned at the second embankment structure on described cap 105 surfaces, cap 105 and wafer to be wrapped 100 are by described the second embankment structure fixed engagement, described the second embankment structure is between the first embankment structure 103 and photo-sensitive cell 102, and described the second embankment structure is positioned at the both sides of photo-sensitive cell 102.

Below will be elaborated to wafer level packaging structure.

In the present embodiment, the first embankment structure 103 is covered in weld pad 101 surfaces, 120 surfaces, Cutting Road region, and chip area 110 surfaces between weld pad 101 and Cutting Road region 120, 120 surfaces, Cutting Road region of the first embankment structure 103 bottoms and wafer to be wrapped 100 have larger contact area, and be positioned at the first embankment structure 103 tops and the cap 105 Surface Contact areas in Cutting Road region 120, first embankment structure 103 bottoms in Cutting Road region 120 and wafer to be wrapped 100 Surface Contact areas equate between the two, therefore, wafer to be wrapped 100 Cutting Road regions 120 have larger mechanical strength.

The above analysis is known, the wafer level packaging structure that adopts the present embodiment to provide encapsulates, when wafer to be wrapped 100 chip area 110 second faces are carried out to attenuate, etching technics, can carry out etching, precut processing to wafer to be wrapped 100 Cutting Road region 120 second faces, reduce the clipping time that packaging technology cutting forms crystal grain, prevent from causing because clipping time is long wafer to be wrapped 100 to break, improve encapsulation performance and letter patience.

In other embodiments, the first embankment structure ensuring coverage is in weld pad surface, the destruction of protecting weld pad not to be subject to packaging technology.

In the present embodiment, described the second embankment structure comprises the first sub-embankment structure 106 and the second sub-embankment structure 107, wherein, the first sub-embankment structure 106 is positioned at a side of photo-sensitive cell 102, the second sub-embankment structure 107 is positioned at the opposite side of photo-sensitive cell 102, and the width of the first sub-embankment structure 106 is greater than the width of the second sub-embankment structure 107.The benefit arranging is like this:

After multiple tracks packaging technology before forming crystal grain completes, the first sub-embankment structure 106 of segment thickness is removed in cutting; After cutting forms crystal grain, only bonding by the second sub-embankment structure 107 between crystal grain and cap 105, the second sub-embankment structure 107 that width is relatively little is set, can make the adhesion strength between crystal grain and cap 105 little, by applying certain External Force Acting to cap 105, can make the second sub-embankment structure 107 come off from grain surface, reach the object separating between cap 105 and wafer to be wrapped 100, and avoid crystal grain to cause unnecessary damage.And, before cutting wafer to be wrapped 100 forms crystal grain, comprise multiple tracks packaging technology step, between cap 105 and wafer to be wrapped 100, need to have enough fixed engagement intensity, thereby prevent from forming the problem that separates between wafer to be wrapped 100 and cap 105 occurring before crystal grain in cutting, therefore, the second sub-embankment structure 107 wider than the first sub-embankment structure 106 width is set, thereby improve the intensity of the fixed engagement between cap 105 and wafer to be wrapped 100, ensured before cutting forms crystal grain, between wafer to be wrapped 100 and cap 105, there is stronger fixed engagement intensity, prevent from forming before crystal grain and separating between wafer to be wrapped 100 and cap 105 in cutting.

In the present embodiment, described the second embankment structural top surface has adhesive phase 108, and adhesive phase 108 and the one-tenth-value thickness 1/10 sum of the second embankment structure and the one-tenth-value thickness 1/10 of the first embankment structure 103 equate between the two; Adhesive phase 108 fixed engagement are passed through with wafer to be wrapped 100 first surfaces in the second embankment structural top surface.Concrete, described the first sub-embankment structure 106 top surfaces and the second sub-embankment structure 107 top surfaces have adhesive phase 108, and equate between the one-tenth-value thickness 1/10 sum of one-tenth-value thickness 1/10 sum, adhesive phase 108 and the second sub-embankment structure 107 of adhesive phase 108 and the first sub-embankment structure 106 and the one-tenth-value thickness 1/10 three of the first embankment structure 103; Described the first sub-embankment structure 106 top surfaces and the second sub-embankment structure 107 top surfaces and wafer to be wrapped 100 first surfaces are by adhesive phase 108 fixed engagement.

In other embodiments, the first sub-embankment structural top surface and the second sub-embankment structural top surface and wafer to be wrapped first surface Direct Bonding, make cap and wafer to be wrapped fixed engagement, between the one-tenth-value thickness 1/10 three of the one-tenth-value thickness 1/10 of the one-tenth-value thickness 1/10 of the first sub-embankment structure, the second sub-embankment structure, the first embankment structure, equate.

The material of described the first sub-embankment structure 106 and the second sub-embankment structure 107 is photoresist, resin, polymethyl methacrylate, unorganic glass or silicon.As an embodiment, when the material of described the first sub-embankment structure 106, the second sub-embankment structure 107 and cap 105 is identical, described the first sub-embankment structure 106, the second sub-embankment structure 107 and cap 105 are structure as a whole.

Wafer level packaging structure also comprises: the measurements of the chest, waist and hips embankment structure 104 that is positioned at wafer to be wrapped 100 chip area 110 first surfaces, and the one-tenth-value thickness 1/10 of described measurements of the chest, waist and hips embankment structure 104 equates with the one-tenth-value thickness 1/10 of the first embankment structure 103, and described measurements of the chest, waist and hips embankment structure 104 is between photo-sensitive cell 102 and the first sub-embankment structure 106 and between photo-sensitive cell 102 and the second sub-embankment structure 107, and described measurements of the chest, waist and hips embankment structure 104 top surfaces contact with cap 105 surfaces.

Measurements of the chest, waist and hips embankment structure 104 both can be for having provided a supporting role between wafer to be wrapped 100 and cap 105; can protect again photo-sensitive cell 102; prevent that the impurity in potting process from entering the region at photo-sensitive cell 102 places, avoid photo-sensitive cell 102 to pollute or damage.

Chip area 110 first surface looping grooves between the first embankment structure 103, measurements of the chest, waist and hips embankment structure 104 and the first embankment structure 103 and the measurements of the chest, waist and hips embankment structure 104 in same chip region 110.

Please refer to Fig. 9 and Figure 10, the utility model another embodiment also provide a kind of wafer level packaging structure, different from the wafer level packaging structure that last embodiment provides: in cap 105, there is opening 150, and described opening 150 to expose the second embankment structural top surface of photo-sensitive cell 102 1 sides.

The benefit in cap 105 with opening 150 is: due to the existence of opening 150, make between cap 105 and wafer to be wrapped 100 only by the second embankment structure fixed engagement of photo-sensitive cell 102 opposite sides, after cutting forms crystal grain, cap 105 dies down with the adhesion strength (fixed engagement intensity) of intergranule, by applying certain active force to cap 105, even if the second embankment structure of photo-sensitive cell 102 opposite sides comes off from grain surface, reach the object of removing cap 105; And, because the second embankment structure of photo-sensitive cell 102 opposite sides makes cap 105 and wafer to be wrapped 100 bonding, in the time of the Cutting Road region 120 of cutting wafer to be wrapped 100, between cap 105 and measurements of the chest, waist and hips embankment structure 104, be still formed with cavity, prevent that impurity from falling in the region at photo-sensitive cell 102 places.

In the present embodiment, the second embankment structure comprises the first sub-embankment structure 106 and the second sub-embankment structure 107, and the width of the first sub-embankment structure 106 is greater than the width of the second sub-embankment structure 107, described opening 150 is positioned at the top of the first sub-embankment structure 106, and exposes the top surface of the first sub-embankment structure 106.The width of described opening 150 is more than or equal to the width of the first sub-embankment structure 106, and the one-tenth-value thickness 1/10 of described the first sub-embankment structure is less than the one-tenth-value thickness 1/10 of the second sub-embankment structure.

Because the width of the first sub-embankment structure 106 is greater than the width of the second sub-embankment structure 107, make the adhesion strength between cap 105 and wafer to be wrapped 100 low as much as possible, thereby reduced the difficulty that cap 105 is come off.

Described wafer level packaging structure also comprises: be positioned at the through hole of 100 second of wafers to be wrapped, described through hole exposes weld pad 101 surfaces; Be positioned at the insulating barrier 111 of 100 second of wafers to be wrapped and through-hole side wall, and described insulating barrier 111 exposes the weld pad 101 of via bottoms; Be positioned at the metal level 112 on insulating barrier 111 surfaces, and described metal level 112 is connected with weld pad 101; Be positioned at the solder-bump 113 on described metal level 112 surfaces; Be positioned at the protective layer 114 on metal level 112 and insulating barrier 111 surfaces.

Although the utility model discloses as above, the utility model is not defined in this.Any those skilled in the art, not departing from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection range of the present utility model should be as the criterion with claim limited range.

Claims (9)

1. a wafer level packaging structure, is characterized in that, comprising:

Wafer to be wrapped, described wafer to be wrapped comprises some chip areas;

Be positioned at weld pad and the photo-sensitive cell on described wafer to be wrapped chip area surface;

Be covered in the first embankment structure on described weld pad surface;

The cap being oppositely arranged with described wafer to be wrapped surface, and the first embankment structural top surface contacts with cap surface;

Be positioned at the second embankment structure on described cap surface, cap and wafer to be wrapped are by described the second embankment structure fixed engagement, described the second embankment structure is between the first embankment structure and photo-sensitive cell, and described the second embankment structure is positioned at the both sides of photo-sensitive cell.

2. wafer level packaging structure according to claim 1, it is characterized in that, described the second embankment structure comprises the first sub-embankment structure and the second sub-embankment structure, wherein, the first sub-embankment structure is positioned at a side of photo-sensitive cell, the second sub-embankment structure is positioned at the opposite side of photo-sensitive cell, and the width of the first sub-embankment structure is greater than the width of the second sub-embankment structure.

3. wafer level packaging structure according to claim 1, it is characterized in that, also comprise: the measurements of the chest, waist and hips embankment structure that is positioned at wafer to be wrapped chip area surface, the one-tenth-value thickness 1/10 of described measurements of the chest, waist and hips embankment structure equates with the one-tenth-value thickness 1/10 of the first embankment structure, and described measurements of the chest, waist and hips embankment structure is between photo-sensitive cell and the second embankment structure, and described measurements of the chest, waist and hips embankment structure top surface contacts with cap surface.

4. wafer level packaging structure according to claim 1, it is characterized in that, described the second embankment structural top surface has adhesive phase, and adhesive phase and the one-tenth-value thickness 1/10 sum of the second embankment structure and the one-tenth-value thickness 1/10 of the first embankment structure equate between the two, described the second embankment structural top surface with wafer to be wrapped surface by adhesive phase fixed engagement.

5. wafer level packaging structure according to claim 1, it is characterized in that, described wafer to be wrapped comprises the Cutting Road region between chip area, and described the first embankment structure is covered in the chip area surface between weld pad surface, Cutting Road region surface and weld pad and Cutting Road region.

6. wafer level packaging structure according to claim 1, is characterized in that, described the second embankment structure, measurements of the chest, waist and hips embankment structure and cap are structure as a whole.

7. wafer level packaging structure according to claim 2, it is characterized in that having opening in described cap, and described opening exposes the second embankment structural top surface of photo-sensitive cell one side.

8. wafer level packaging structure according to claim 7, is characterized in that, described opening is positioned at the first sub-embankment structural top, and exposes the top surface of the first sub-embankment structure.

9. wafer level packaging structure according to claim 8, is characterized in that, the width of described opening is more than or equal to the width of the first sub-embankment structure, and the one-tenth-value thickness 1/10 of described the first sub-embankment structure is less than the one-tenth-value thickness 1/10 of the second sub-embankment structure.