CN203928707U - A kind of transmission guipure of solar silicon wafers high temperature sintering furnace - Google Patents
A kind of transmission guipure of solar silicon wafers high temperature sintering furnace Download PDFInfo
- Publication number
- CN203928707U CN203928707U CN201420328308.4U CN201420328308U CN203928707U CN 203928707 U CN203928707 U CN 203928707U CN 201420328308 U CN201420328308 U CN 201420328308U CN 203928707 U CN203928707 U CN 203928707U
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- China
- Prior art keywords
- support bar
- inverted
- guipure
- silicon wafers
- shaped lug
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- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of transmission guipure of solar silicon wafers high temperature sintering furnace, comprise guipure body, described guipure body includes the some master links that are arranged side by side along direction of transfer, between every two master links, all by a wire netting filament winding, connect fixing, between every two master links, be also equipped with a support bar, on each root support bar, all bending forming has two for the inverted U-shaped lug boss of supporting silicon chip, and between the peak of two inverted U-shaped lug bosses, spacing is less than the width of silicon chip, therefore solar silicon wafers is placed into transmission guipure provided by the utility model and uploads and send, actual contacts with two inverted U-shaped lug bosses on support bar, and other parts are to be all suspended on to transmit on guipure, thereby solar silicon wafers and the contact area that transmits guipure have greatly been reduced, and then effectively improve the high temperature sintering quality of solar silicon wafers.
Description
Technical field
The utility model relates to a kind of solar silicon wafers high temperature sintering furnace, is specifically related to the transmission guipure of solar silicon wafers high temperature sintering furnace.
Background technology
The high temperature sintering operation of solar silicon wafers is mainly that solar silicon wafers is positioned over and is transmitted on guipure, and transmits with transmitting guipure, thereby passes through successively a plurality of warm areas of high temperature sintering furnace, completes high temperature sintering.Existing transmission guipure mainly includes the some master links that are arranged side by side along direction of transfer as shown in Figure 1, between every two master links, all by a wire netting filament winding, connect fixing, due in the prior art, solar silicon wafers is directly placed on existing transmission guipure and uploads and send, be the whole back side of solar silicon wafers all directly and master link and metal twine plane contact, therefore contact area is large, after high temperature sintering completes, the whole back side of solar silicon wafers all can leave the wire mark producing because of contact, thereby greatly reduces the quality of solar silicon wafers.
Summary of the invention
For the deficiencies in the prior art, it is a kind of can greatly reduce to transmit time and the transmission guipure of the solar silicon wafers high temperature sintering furnace of solar silicon wafers contact area that the utility model provides.
For achieving the above object, the utility model provides a kind of transmission guipure of solar silicon wafers high temperature sintering furnace, comprise guipure body, described guipure body includes the some master links that are arranged side by side along direction of transfer, between every two master links, all by a wire netting filament winding, connect fixing, between every two master links, be also equipped with a support bar, on each root support bar, all bending forming has two for the inverted U-shaped lug boss of supporting silicon chip, and between the peak of two inverted U-shaped lug bosses, spacing is less than the width of silicon chip, connection middle part on described support bar between two inverted U-shaped lug bosses wears to be fixed on metal twine, on the end, two ends of described support bar, be also all connected with one section of upward protection department to extending, and the minimum spacing between described two protection departments is greater than the width of silicon chip, the peak of described protection department is higher than the peak of inverted U-shaped lug boss, the outer end of described protection department is also connected with to downward-extension and can forms the fixing overhead kick portion of joining that hooks with described wire netting silk.
The beneficial effects of the utility model are: adopt said structure, because the utility model is provided with a support bar between described every two master links, and make equal bending forming on each root support bar have two for the inverted U-shaped lug boss of supporting silicon chip, therefore solar silicon wafers is placed into transmission guipure provided by the utility model and uploads and send, actual contacts with two inverted U-shaped lug bosses on support bar, and other parts are to be all suspended on to transmit on guipure, thereby solar silicon wafers and the contact area that transmits guipure have greatly been reduced, and then effectively improve the high temperature sintering quality of solar silicon wafers.Meanwhile, owing to being also all connected with one section of upward protection department to extending on the end, two ends of described support bar, therefore can effectively avoid solar silicon wafers landing from support bar when transmitting.Separately, because the middle part of the connection between two inverted U-shaped lug bosses on described support bar is to wear to be fixed on metal twine, and the outer end of described protection department is also connected with to downward-extension and can forms the fixing overhead kick portion of joining that hooks with described wire netting silk, therefore by said structure effect, can make described support bar reliablely and stablely be fixed on guipure body.
The outer surface that the utility model can further be set to two inverted U-shaped lug bosses on described support bar is also coated with thermostable rustproof coating.Adopt said structure, can effectively prevent the outer surface generation oxidation and rusting of two inverted U-shaped lug bosses on support bar, thereby further improve the high temperature sintering quality of solar silicon wafers.
It is parallel with the central axis of master link that the utility model also can further be set to the central axis at the middle part of the connection between two inverted U-shaped lug bosses on described support bar.Adopt said structure, can make described support bar more fitly be arranged between master link, thereby make solar silicon wafers transmit also and stablize more thereon.
Accompanying drawing explanation
Fig. 1 is the top view of prior art;
Fig. 2 is stereogram of the present utility model;
Fig. 3 is the stereogram of support bar in the utility model;
Fig. 4 is the state diagram that in the utility model, support bar is connected with solar silicon wafers.
The specific embodiment
As Fig. 2, 3, shown in 4, provided a kind of transmission guipure of solar silicon wafers high temperature sintering furnace, comprise guipure body, described guipure body includes the some master links that are arranged side by side along direction of transfer 1, between every two master links 1, all by metal twine 2 solderless wrapped connections, fix, between every two master links 1, be also equipped with a support bar 3, on each root support bar 3, all bending forming has two for the inverted U-shaped lug boss 31 of support solar silicon chip 4, and between the peak of two inverted U-shaped lug bosses 31, spacing is less than the width of silicon chip 4, on described support bar 3, the outer surface of two inverted U-shaped lug bosses 31 is also coated with thermostable rustproof coating 5, therefore solar silicon wafers 4 is placed into transmission guipure provided by the utility model and uploads and send, actual contacts with two inverted U-shaped lug bosses 31 on support bar 3, and other parts are to be all suspended on to transmit on guipure, thereby solar silicon wafers 4 and the contact area that transmits guipure have greatly been reduced, and then effectively improve the high temperature sintering quality of solar silicon wafers 4.Connection middle part 32 on described support bar 3 between two inverted U-shaped lug bosses 31 wears to be fixed on metal twine 2, and the central axis at described connection middle part 31 is parallel with the central axis of master link 1.On the end, two ends of described support bar 3, be also all connected with one section of upward protection department 33 to extending, and the minimum spacing between described two protection departments 33 is greater than the width of silicon chip 4, the peak of described protection department 33, higher than the peak of inverted U-shaped lug boss 31, can effectively be avoided solar silicon wafers 4 landing from support bar 3 when transmitting by the effect of described protection department 33.The outer end of described protection department 33 is also connected with to downward-extension and can forms the fixing overhead kick portion 34 of joining that hooks with described metal twine 2, and the effect by described overhead kick portion 34, can make described support bar 3 more reliablely and stablely be fixed on guipure body.
Claims (3)
1. the transmission guipure of a solar silicon wafers high temperature sintering furnace, comprise guipure body, described guipure body includes the some master links that are arranged side by side along direction of transfer, between every two master links, all by a wire netting filament winding, connect fixing, it is characterized in that: between every two master links, be also equipped with a support bar, on each root support bar, all bending forming has two for the inverted U-shaped lug boss of supporting silicon chip, and between the peak of two inverted U-shaped lug bosses, spacing is less than the width of silicon chip, connection middle part on described support bar between two inverted U-shaped lug bosses wears to be fixed on metal twine, on the end, two ends of described support bar, be also all connected with one section of upward protection department to extending, and the minimum spacing between described two protection departments is greater than the width of silicon chip, the peak of described protection department is higher than the peak of inverted U-shaped lug boss, the outer end of described protection department is also connected with to downward-extension and can forms the fixing overhead kick portion of joining that hooks with described wire netting silk.
2. the transmission guipure of a kind of solar silicon wafers high temperature sintering furnace according to claim 1, is characterized in that: on described support bar, the outer surface of two inverted U-shaped lug bosses is also coated with thermostable rustproof coating.
3. the transmission guipure of a kind of solar silicon wafers high temperature sintering furnace according to claim 1, is characterized in that: the central axis at the connection middle part on described support bar between two inverted U-shaped lug bosses is parallel with the central axis of master link.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420328308.4U CN203928707U (en) | 2014-06-19 | 2014-06-19 | A kind of transmission guipure of solar silicon wafers high temperature sintering furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420328308.4U CN203928707U (en) | 2014-06-19 | 2014-06-19 | A kind of transmission guipure of solar silicon wafers high temperature sintering furnace |
Publications (1)
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CN203928707U true CN203928707U (en) | 2014-11-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201420328308.4U Expired - Fee Related CN203928707U (en) | 2014-06-19 | 2014-06-19 | A kind of transmission guipure of solar silicon wafers high temperature sintering furnace |
Country Status (1)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109931785A (en) * | 2019-03-18 | 2019-06-25 | 通威太阳能(成都)有限公司 | A kind of new type high temperature transmission crawler belt |
CN110081707A (en) * | 2019-03-20 | 2019-08-02 | 常州大学 | A kind of sintering crawler device improving solar battery sheet appearance |
-
2014
- 2014-06-19 CN CN201420328308.4U patent/CN203928707U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109931785A (en) * | 2019-03-18 | 2019-06-25 | 通威太阳能(成都)有限公司 | A kind of new type high temperature transmission crawler belt |
CN109931785B (en) * | 2019-03-18 | 2024-03-29 | 通威太阳能(成都)有限公司 | Novel high-temperature conveying crawler belt |
CN110081707A (en) * | 2019-03-20 | 2019-08-02 | 常州大学 | A kind of sintering crawler device improving solar battery sheet appearance |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20150619 |
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EXPY | Termination of patent right or utility model |