CN203918235U - A kind of laser ablation Apparatus and system - Google Patents
A kind of laser ablation Apparatus and system Download PDFInfo
- Publication number
- CN203918235U CN203918235U CN201420292077.6U CN201420292077U CN203918235U CN 203918235 U CN203918235 U CN 203918235U CN 201420292077 U CN201420292077 U CN 201420292077U CN 203918235 U CN203918235 U CN 203918235U
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- laser
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- 238000000608 laser ablation Methods 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 25
- 238000010329 laser etching Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 9
- 230000006378 damage Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The utility model discloses a kind of laser ablation Apparatus and system.This laser ablation device comprises: chip, article carrying platform, spectrometric instrument and tunable laser.Wherein, article carrying platform is for carries chips; Spectrometric instrument is for detection of the information to be etched of chip; Tunable laser is carried out etching according to layer information to be etched to the layer to be etched of chip.By the way, the utility model can be able to be realized the layer to be etched of chip is carried out to automatic etching.
Description
Technical field
The utility model relates to laser ablation technical field, particularly relates to a kind of laser ablation Apparatus and system.
Background technology
At present, for the layer method that goes to chip, comprise chemical etching method, plasma etching method and mechanical milling method.Wherein, the most frequently used is the method that adopts RIE reactive ion etching and wet process acid corrosion to combine, by light microscope or energy disperse spectroscopy, obtain the composition of chip, according to the color of bonding region and peripheral region and reflective difference, obtain the thickness of layers of material, and according to the composition of chip, chip is processed accordingly.But, the technology that this dry method and wet method combine, the condition of RIE reactive ion is higher, and processing procedure is more consuming time, and acid liquid corrosion is detrimental to health.
Utility model content
In view of this, the utility model provides a kind of laser ablation Apparatus and system, realizes the layer to be etched of chip is carried out to automatic etching, avoids damaging health.
For solving above technical problem, the utility model embodiment provides a kind of laser ablation device, and it comprises: chip; Article carrying platform, for carries chips; Spectrometric instrument, for detection of the layer information to be etched of chip; Tunable laser, for obtain layer information to be etched from spectrometric instrument, and carries out etching according to layer information to be etched to the layer to be etched of chip.
Wherein, tunable laser is arranged in a cavity, and this cavity is used for shielding tunable laser.
Wherein, the tuning range of tunable laser is 0.4 μ m to 10.6 μ m.
Wherein, layer information to be etched comprises element and the material composition of layer to be etched.
Wherein, tunable laser comprises semiconductor laser with tunable, ti sapphire laser, dye laser or CO
2laser instrument.
The utility model also provides a kind of laser etching system, comprising: chip; Article carrying platform, for carries chips; Spectrometric instrument, for detection of the layer information to be etched of chip; Workbench, for obtain layer information to be etched from spectrometric instrument, and produces the first information and the second information according to layer information to be etched; Adjuster, for obtaining the first information from workbench, and controls article carrying platform according to the first information, to regulate the position of chip; Tunable laser, for obtain the second information from workbench, and carries out etching according to the second information to the layer to be etched of chip.
Wherein, tunable laser is arranged in a cavity, and this cavity is used for shielding tunable laser.
Wherein, the tuning range of tunable laser is 0.4 μ m to 10.6 μ m.
Wherein, layer information to be etched comprises element and the material composition of layer to be etched.
Wherein, tunable laser comprises semiconductor laser with tunable, ti sapphire laser, dye laser or CO
2laser instrument.
Pass through such scheme, the beneficial effects of the utility model are: be different from prior art, the utility model is by the layer information to be etched of spectrometric instrument detection chip, tunable laser is carried out etching according to layer information to be etched to the layer to be etched of chip, can realize the layer to be etched of chip is carried out to automatic etching, and do not damage with layer other materials or subsurface material, avoid damaging health.
Accompanying drawing explanation
Fig. 1 is the structural representation of the laser ablation device of the utility model the first embodiment;
Fig. 2 is the structural representation of the laser etching system of the utility model the second embodiment.
The specific embodiment
Refer to Fig. 1, Fig. 1 is the structural representation of the laser ablation device of the utility model the first embodiment.As shown in Figure 1, this laser ablation device 1 comprises: chip 11, article carrying platform 12, spectrometric instrument 13, tunable laser 14 and support 15.
In the present embodiment, article carrying platform 12 is for carries chips 11, and support 15 is for carrying spectrometric instrument 13, tunable laser 14 and article carrying platform 12.
In the present embodiment, spectrometric instrument 13 is differentiated material and chemical composition and relative amount by the spectrum of material, be chemical composition and the relative amount that spectrometric instrument 13 is differentiated chip 11, and then the layer information to be etched of detection chip 11, layer information to be etched comprises element and the material composition of layer to be etched.Preferably, spectrometric instrument 13 is direct-reading spectrometer or Handheld spectrometer.
In the present embodiment, tunable laser 14 is by the absorption to different wavelengths of light according to different materials, and then realization is to the etching of multiple material and reservation.Wherein, tunable laser 14 is connected with spectrometric instrument 13, to obtain layer information to be etched from spectrometric instrument 13, and according to layer information to be etched, the layer to be etched of chip 11 is carried out to etching.Being tunable laser 14 regulates and swashs light wavelength, power and focal length according to the layer information to be etched of spectrometric instrument 13 feedbacks, and then realizes and treat etch layer and carry out etching, and does not damage with layer other materials or subsurface material.
Tunable laser 14 can also be arranged in a cavity (not shown), and this cavity is for shielding the laser of tunable laser 14 completely, prevents that laser from penetrating outward, thereby avoids the injury of laser to human body.
Wherein, tunable laser 14 comprises semiconductor laser with tunable, ti sapphire laser, dye laser or CO
2laser instrument.Preferably, the tuning range of tunable laser 14 is 0.4 μ m to 10.6 μ m.
The laser ablation device 1 that the present embodiment discloses is by the layer information to be etched of spectrometric instrument 13 detection chip 11, tunable laser 14 is carried out etching according to layer information to be etched to the layer to be etched of chip 11, can realize the layer to be etched of chip 11 is carried out to automatic etching, and do not damage with layer other materials or subsurface material, avoid damaging health.
The utility model has also proposed a kind of laser etching system.As shown in Figure 2, the laser etching system 2 that the present embodiment discloses comprises: chip 21, article carrying platform 22, spectrometric instrument 23, tunable laser 24, support 25, workbench 26 and adjuster 27.
In the present embodiment, article carrying platform 22 is for carries chips 21, and support 25 is for carrying spectrometric instrument 23, tunable laser 24, article carrying platform 22, workbench 26 and adjuster 27.
In the present embodiment, spectrometric instrument 23 is differentiated material and chemical composition and relative amount by the spectrum of material, be chemical composition and the relative amount that spectrometric instrument 23 is differentiated chip 21, and then the layer information to be etched of detection chip 21, layer information to be etched comprises element and the material composition of layer to be etched.Preferably, spectrometric instrument 23 is direct-reading spectrometer or Handheld spectrometer.
Wherein, workbench 26 is connected with spectrometric instrument 23, tunable laser 24 and adjuster 27 respectively, and workbench 26 obtains the layer information to be etched of chip 21 from spectrometric instrument 23, and produces the first information and the second information according to layer information to be etched.Preferably, workbench 26 is computer.
Wherein, adjuster 27 obtains the described first information from workbench 26, and controls article carrying platform 22 according to the first information, to regulate the position of chip 21.Adjuster 27 is for the position to be etched of positioning chip 21, so that tunable laser 24 is carried out etching to the position to be etched of chip 21 accurately.In addition, adjuster 27 is also for regulating translational speed and the moving range of chip 21.
In the present embodiment, tunable laser 24 is by the absorption to different wavelengths of light according to different materials, and then realization is to the etching of multiple material and reservation.Wherein, tunable laser 24 is obtained the second information from workbench 26, and according to the second information, the layer to be etched of chip 21 is carried out to etching.Being tunable laser 24 regulates and swashs light wavelength, power and focal length according to the second information, and then realizes and treat etch layer and carry out etching, and does not damage with layer other materials or subsurface material.
Tunable laser 24 can also be arranged in a cavity (not shown), and this cavity is for shielding the laser of tunable laser 24 completely, prevents that laser from penetrating outward, thereby avoids the injury of laser to human body.
Wherein, tunable laser 24 comprises semiconductor laser with tunable, ti sapphire laser, dye laser or CO
2laser instrument.Preferably, the tuning range of tunable laser 24 is 0.4 μ m to 10.6 μ m.
In sum, the utility model is by the layer information to be etched of spectrometric instrument detection chip, tunable laser is carried out etching according to layer information to be etched to the layer to be etched of chip, can realize the layer to be etched of chip is carried out to automatic etching, and do not damage with layer other materials or subsurface material, avoid damaging health.
The foregoing is only embodiment of the present utility model; not thereby limit the scope of the claims of the present utility model; every equivalent structure or conversion of equivalent flow process that utilizes the utility model description and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (10)
1. a laser ablation device, is characterized in that, described laser ablation device comprises:
Chip;
Article carrying platform, for carrying described chip;
Spectrometric instrument, for detection of the layer information to be etched of described chip;
Tunable laser, for obtain described layer information to be etched from described spectrometric instrument, and carries out etching according to described layer information to be etched to the layer to be etched of described chip.
2. laser ablation device according to claim 1, is characterized in that, described tunable laser is arranged in a cavity, and described cavity is used for shielding described tunable laser.
3. laser ablation device according to claim 1, is characterized in that, the tuning range of described tunable laser is 0.4 μ m to 10.6 μ m.
4. laser ablation device according to claim 1, is characterized in that, described layer information to be etched comprises element and the material composition of described layer to be etched.
5. laser ablation device according to claim 1, is characterized in that, described tunable laser comprises semiconductor laser with tunable, ti sapphire laser, dye laser or CO
2laser instrument.
6. a laser etching system, is characterized in that, described laser etching system comprises:
Chip;
Article carrying platform, for carrying described chip;
Spectrometric instrument, for detection of the layer information to be etched of described chip;
Workbench, for obtain described layer information to be etched from described spectrometric instrument, and produces the first information and the second information according to described layer information to be etched;
Adjuster, for obtaining the described first information from described workbench, and controls described article carrying platform according to the described first information, to regulate the position of described chip;
Tunable laser, for obtain described the second information from described workbench, and carries out etching according to described the second information to the layer to be etched of described chip.
7. laser etching system according to claim 6, is characterized in that, described tunable laser is arranged in a cavity, and described cavity is used for shielding described tunable laser.
8. laser etching system according to claim 6, is characterized in that, the tuning range of described tunable laser is 0.4 μ m to 10.6 μ m.
9. laser etching system according to claim 6, is characterized in that, described layer information to be etched comprises element and the material composition of described layer to be etched.
10. laser etching system according to claim 6, is characterized in that, described tunable laser comprises semiconductor laser with tunable, ti sapphire laser, dye laser or CO
2laser instrument.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420292077.6U CN203918235U (en) | 2014-06-03 | 2014-06-03 | A kind of laser ablation Apparatus and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420292077.6U CN203918235U (en) | 2014-06-03 | 2014-06-03 | A kind of laser ablation Apparatus and system |
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| Publication Number | Publication Date |
|---|---|
| CN203918235U true CN203918235U (en) | 2014-11-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420292077.6U Expired - Lifetime CN203918235U (en) | 2014-06-03 | 2014-06-03 | A kind of laser ablation Apparatus and system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106054395A (en) * | 2016-07-22 | 2016-10-26 | 武汉锐科光纤激光技术股份有限公司 | Fiber combiner based on laser etching and preparation method thereof |
| CN107093555A (en) * | 2017-04-02 | 2017-08-25 | 厦门芯光润泽科技有限公司 | A kind of etching machine for chip manufacture |
| CN109148289A (en) * | 2018-08-17 | 2019-01-04 | 苏州芯联成软件有限公司 | A kind of method of the embedding sample grinding of ultra micro cake core |
-
2014
- 2014-06-03 CN CN201420292077.6U patent/CN203918235U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106054395A (en) * | 2016-07-22 | 2016-10-26 | 武汉锐科光纤激光技术股份有限公司 | Fiber combiner based on laser etching and preparation method thereof |
| CN107093555A (en) * | 2017-04-02 | 2017-08-25 | 厦门芯光润泽科技有限公司 | A kind of etching machine for chip manufacture |
| CN109148289A (en) * | 2018-08-17 | 2019-01-04 | 苏州芯联成软件有限公司 | A kind of method of the embedding sample grinding of ultra micro cake core |
| CN109148289B (en) * | 2018-08-17 | 2021-01-26 | 苏州芯联成软件有限公司 | Method for grinding embedded sample of ultra-miniature chip |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141105 |
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| CX01 | Expiry of patent term |