CN203882952U - Equipment for monitoring etching damage of film - Google Patents
Equipment for monitoring etching damage of film Download PDFInfo
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- CN203882952U CN203882952U CN201320851584.4U CN201320851584U CN203882952U CN 203882952 U CN203882952 U CN 203882952U CN 201320851584 U CN201320851584 U CN 201320851584U CN 203882952 U CN203882952 U CN 203882952U
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- 238000005530 etching Methods 0.000 title claims abstract description 65
- 238000012544 monitoring process Methods 0.000 title claims abstract description 31
- 230000006378 damage Effects 0.000 title abstract description 3
- 238000002834 transmittance Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000523 sample Substances 0.000 claims abstract description 14
- 230000007547 defect Effects 0.000 claims description 13
- 230000035807 sensation Effects 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 83
- 238000000034 method Methods 0.000 description 47
- 230000008569 process Effects 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000002585 base Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007715 excimer laser crystallization Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 as CF 4 Chemical compound 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to the technical field of display, and specifically relates to equipment for monitoring the etching damage of a film. The equipment comprises a cavity, and the interior of the cavity is provided with a light source and a plurality of light-sensing probes. The light source irradiates on the film of a substrate. The light-sensing probes are used for sensing the light transmittance of the film. The equipment provided by the utility model is simple in structure, is convenient to use, can effectively monitor the etching degree of the film through comparison of the light transmittances of the film under different conditions, guarantees that the film is not excessively etched to maximum extent, guarantees the performance of the film, and further improves the yield of products.
Description
Technical field
The utility model relates to Display Technique field, particularly a kind of rete etching antisitic defect watch-dog.
Background technology
At present, because the relative amorphous silicon display base plate of low temperature polycrystalline silicon display base plate has higher driving force, can be easier to obtain higher display quality, therefore, more and more be subject to pursuing of user.As shown in Figure 1, for a kind of structural representation of typical top gate structure array base palte, this array base palte comprises that the transparency carriers 101 ' such as glass, resilient coating 102 ', polysilicon active layer 103 ', gate insulator 104 ', gate metal 105 ' and interlayer insulating film 106 ' form.With reference to accompanying drawing 1B, when etching via hole, on interlayer insulating film 106 ', by photoetching process, form mask 107 ', adopt dry etching 108 ' will be with etch areas 109 ' etching to remove, thereby formation via hole, thus can plated metal in subsequent technique to realizing in via hole and being connected of polysilicon active layer.
But regrettably, the thickness that at present gate insulator 104 ', interlayer insulating film 106 ' are added up is mutually the thickness difference very large (more than 10:1) of comparing active layer, the difficulty of etching technics is very large, and more difficult effective monitoring is whether just etched to polysilicon active layer surface, cause being easy to occur that active layer crosses problem at quarter, reduced the fine ratio of product of polycrystalline silicon substrate, when particularly substrate size is larger, the etching situation of whole substrate is more difficult to hold.
Certainly, except active layer, also there is the phenomenon that overetch occurs in etching process in other retes.
Utility model content
(1) technical problem that will solve
The purpose of this utility model is to provide rete etching antisitic defect watch-dog, to overcome in prior art, cannot control the etching degree of the retes such as active layer is caused easily occurring quarter, affects the defect of the film performances such as active layer.
(2) technical scheme
To achieve these goals, the utility model provides a kind of rete etching antisitic defect watch-dog, comprises chamber, is provided with light source and several light sensations probe in described chamber, described light source irradiates to the described rete on substrate, and described light sensation probe is for responding to the light transmittance of described rete.
Preferably, described chamber is vacuum chamber, and described vacuum chamber is communicated with reacting gas source; In described vacuum chamber, be provided with etching device.
Preferably, described etching device specifically comprises:
The top crown being oppositely arranged and bottom crown, one of them pole plate ground connection, another one pole plate connects radio-frequency power supply, makes generation between top crown and bottom crown to substrate, carry out the plasma of etching;
Described bottom crown is for placing substrate to be etched.
Preferably, described light source is positioned on described top crown;
Or described light source is positioned at the sidewall of vacuum chamber;
Or described light source is positioned at the upper wall of vacuum chamber.
Preferably, described light sensation probe is arranged at described bottom crown away from a side of described substrate.
Preferably, the quantity of described light sensation probe is 5-25, is uniformly distributed.
Preferably, also comprise that described radio-frequency power supply carries out the monitoring of the light transmittance of rete in power-off time section for providing radio-frequency current to produce the radio-frequency power supply of plasma.
(3) beneficial effect
The rete etching antisitic defect watch-dog that the utility model provides, simple in structure, easy to use, by the light transmittance of rete under contrast different conditions, can the etching degree of effective monitoring to rete, at utmost guarantee that rete, not by overetch, guarantees the performance of rete, and then the yields of product is provided.
Accompanying drawing explanation
Fig. 1 is top gate type array base palte schematic diagram in prior art;
Fig. 2 is the utility model embodiment mono-rete etching antisitic defect monitoring method schematic flow sheet;
Fig. 3 is the utility model embodiment bis-active layer etching antisitic defect monitoring method schematic flow sheets;
Fig. 4 is the manufacture method schematic flow sheet of the utility model embodiment tri-array base paltes;
Fig. 5 A～5D is each step structural representation in the manufacture method process of the utility model embodiment tri-array base paltes;
Fig. 6 is the utility model embodiment tetra-active layer etching monitoring equipment structural representations.
Embodiment
Below in conjunction with drawings and Examples, embodiment of the present utility model is described in further detail.Following examples are used for illustrating the utility model, but are not used for limiting scope of the present utility model.
Embodiment mono-
As shown in Figure 2, the utility model embodiment provides a kind of rete etching antisitic defect method for supervising, comprising:
Step S101, after forming rete figure, monitor and record the light transmittance fiducial value of described rete;
Step S102, on described rete figure, form barrier layer, barrier layer is carried out in the process of etching via hole, the existing value of the light transmittance of rete described in Real-Time Monitoring, monitors the etching degree to described rete by the variable quantity between the existing value of light transmittance and light transmittance fiducial value.
Wherein, in order to ensure the printing opacity uniformity of whole substrate, can monitor a plurality of light transmittance values of the diverse location of described rete.Preferably, can monitor 9～25 light transmittance values of the diverse location of described rete.Certainly, the quantity of this particular location can be determined according to the actual requirements.
In actual etching engineering, the existing value of light transmittance of Real-Time Monitoring rete, when the existing value of light transmittance reach light transmittance fiducial value 100%～120% time, stop etching.
The present embodiment method for supervising in actual applications, conventionally thinner for thicknesses of layers, and the relatively thick board structure of the thickness on barrier layer, because thickness and the rete on barrier layer are thicker, at etching barrier layer, form in the process of via hole like this, if do not adopt monitoring means, be easy to thinner rete over etching, thereby affect the normal usage energy of this rete.In addition, this rete can be for example active layer, source-drain electrode layer etc.
Embodiment bis-
Active layer take below as example, this rete etching antisitic defect method for supervising is elaborated.
As shown in Figure 3, the utility model provides a kind of active layer etching injury monitoring method, and it comprises the steps:
Step S201, after forming active layer pattern, monitor and record the light transmittance fiducial value of this active layer;
Wherein, form active layer pattern and specifically comprise: deposited amorphous silicon layer, thickness is
preferred thickness is
its formation method can be PECVD (plasma enhanced chemical vapor deposition), LPCVD (low-pressure chemical vapor deposition) or sputtering method, and depositing temperature is below 600 ℃.Can change amorphous silicon layer into polysilicon layer by methods such as Excimer-Laser Crystallization, metal-induced crystallization, solid phase crystallizations subsequently, it should be noted that, adopt different crystallization methods, the technical process that it is concrete and the structure of thin-film transistor can be different, need according to circumstances to increase the doping (P type or N-type doping) of heat treatment dehydrogenation, deposition induction metal, heat treatment crystallization, excimer laser irradiation crystallization, source-drain area and the techniques such as activation of impurity in preparation process.
After amorphous silicon is converted into polysilicon layer, with photoetching process, form mask, then adopt dry etching method to form figure, as active layer figure.
Wherein, the light transmittance fiducial value of monitoring and record this active layer specifically comprises: monitor and record now transmitance the record of polysilicon region, specifically can pass through to substrate illumination beam, respond to the light transmittance of described active layer figure, and the transmitance fiducial value using this light transmittance as active layer, for monitoring the uniformity of whole substrate, a plurality of data values of monitoring diverse location, as measure 9～25 data.
Step S202, on active layer figure, form barrier layer, barrier layer is carried out in the process of etching via hole, the existing value of light transmittance of Real-Time Monitoring active layer, monitors the etching degree to active layer by the variable quantity between the existing value of light transmittance and light transmittance fiducial value.
Wherein, plasma etching, reactive ion etching or inductively coupled plasma lithographic method are selected in barrier layer, described etching gas is gas fluorine-containing, chlorine.In etching process, the existing value of the light transmittance of Real-Time Monitoring active layer, when the existing value of light transmittance transmitance reach light transmittance fiducial value 100%～120% time, represent to be etched to active layer, stop etching.
The active layer monitoring methods of etching that the utility model embodiment provides, by the light transmittance of active layer under contrast different conditions, can the etching degree of effective monitoring to active layer, at utmost guarantee that active layer is not by overetch, guarantee the performance of active layer, and then the yields of product is provided.
Embodiment tri-
As shown in Figure 4, the utility model provides a kind of array substrate manufacturing method, and in order to highlight the effect of this active layer monitoring, this array base palte adopts top gate type structure.
The manufacture method of this array base palte specifically comprises:
Step S301, on substrate, deposit resilient coating;
With reference to Fig. 5 A, on the transparency carriers such as glass 301 through cleaning in advance, with methods such as PECVD, LPCVD, APCVD (atmospheric pressure chemical vapour deposition), ECR-CVD (electron cyclotron resonance chemical vapour deposition (CVD)) or sputters, form resilient coating 302, to stop that Impurity Diffusion contained in glass enters in active layer, prevent from the characteristics such as the threshold voltage of TFT element and leakage current to exert an influence.
This resilient coating can be silica, silicon nitride or the lamination of the two of individual layer.The thickness of this layer can be
preferred thickness is
depositing temperature is under 600 ℃ or lower temperature.
Except having introduced resilient coating, because the metals content impurities such as aluminium, barium and sodium in traditional alkali glass are higher, easily in high-temperature processing technology, there is the diffusion of metal impurities, glass substrate suggestion adopts alkali-free glass.
Step S302, on resilient coating, form the figure of active layer, monitor and record the light transmittance fiducial value of described active layer.
With reference to Fig. 5 B, deposited amorphous silicon layer 303 on resilient coating 302, thickness is
preferred thickness is
its formation method can be PECVD, LPCVD or sputtering method, and depositing temperature is below 600 ℃.Can change amorphous silicon layer 303 into polysilicon layer 303C by methods such as Excimer-Laser Crystallization, metal-induced crystallization, solid phase crystallizations subsequently, it should be noted that, adopt different crystallization methods, the technical process that it is concrete and the structure of thin-film transistor can be different, need according to circumstances to increase the doping (P type or N-type doping) of heat treatment dehydrogenation, deposition induction metal, heat treatment crystallization, excimer laser irradiation crystallization, source-drain area and the techniques such as activation of impurity in preparation process.
After amorphous is turned to polysilicon, with photoetching process, form mask, then adopt dry etching method to form figure, as the active layer figure of TFT.
Monitor and record now transmitance the record of polysilicon region, specifically can pass through to substrate illumination beam, respond to the light transmittance of described active layer figure, and the transmitance fiducial value using this light transmittance as active layer, for monitoring the uniformity of whole substrate, a plurality of data values of monitoring diverse location, as measure 9～25 data.
This transmitance numerical value, using the fiducial value as follow-up monitoring etching situation, for monitoring the uniformity of whole substrate, can be surveyed some data of diverse location more, as measures 9～25 data.
Step S303, deposition gate insulation layer, gate electrode layer, interlayer insulating film, form the backboard of via hole to be etched;
With reference to Fig. 5 C, adopt the method deposition gate insulation layers 304 such as PECVD, LPCVD, APCVD or ECR-CVD; Then adopt the methods such as sputter, thermal evaporation or PECVD, LPCVD, APCVD, ECR-CVD on gate insulation layer, to deposit gate electrode layer 305; Adopt the method for wet etching or dry etching, with photoetching process, form mask, gate electrode layer 305 etchings are formed to figure.
The thickness of gate insulation layer 304 is
can need to select suitable thickness according to concrete technology, this layer can adopt silica, silicon nitride or the lamination of the two of individual layer, and depositing temperature is generally below 600 ℃.Gate electrode layer 305 consists of as the electric conducting materials such as polysilicon of molybdenum, molybdenum alloy etc. or doping metal, metal alloy, and thickness exists
in scope, preferred thickness is
On gate insulation layer, be that thickness exists
interlayer insulating film 306, preferred thickness is
can adopt the methods such as PECVD, LPCVD, APCVD or ECR-CVD at the depositing temperature deposition interlayer insulating film below 600 ℃.Interlayer insulating film 306 can be comprised of the silica of individual layer or the lamination of silica and silicon nitride.
Step S304, with photoetching process, form mask, adopt dry etching to etch via hole, and monitor via hole transmitance, before transmitance reaches, stop etching 100%～120% of the active layer transmitance fiducial value of record time.
With reference to Fig. 5 D, on interlayer insulating film 306, with photoetching process, form photoresist (photoresist) mask layer 307, the thickness of photoresist layer is preferably
under the covering of mask layer, the region that is etched can adopt dry etching to remove.Dry etching can be selected the methods such as plasma etching, reactive ion etching, inductively coupled plasma etching, and etching gas can be selected gas fluorine-containing, chlorine, as CF
4, CHF
3, SF
6, CCl
2f
2deng or these gases and O
2mist.In etching process, transmitance with 9～25 of method monitorings same in step S203, and compare with the data that record in step S203, by the existing value of light transmittance of Real-Time Monitoring active layer and the variable quantity between light transmittance fiducial value, monitor the etching degree to described rete.By this method for supervising, even if the thickness that gate insulator 104, interlayer insulating film 106 are added up is mutually the thickness difference very in the situation of large (more than 10:1) of comparing active layer, also can well monitor the etching degree of active layer, thereby control accordingly the progress of etching.
Further, when existing value transmitance reach before record transmitance fiducial value 100%～120% time represent to be etched to polysilicon layer (active layer), can stop etching.
Step S305, on the substrate of above-mentioned steps, form source-drain electrode layer completing, described source-drain electrode is realized and being electrically connected to active layer by via hole.
Adopt said method to make array base palte, can control in real time the etching degree to active layer, guarantee that active layer is not by overetch, and then improve the yields of product.
Embodiment tetra-
As shown in Figure 6, the utility model embodiment provides a kind of rete etching antisitic defect watch-dog, comprises chamber, is provided with light source 3 and several light sensations probe 4 in described chamber, described light source 3 irradiates to the described rete on substrate, and described light sensation probe 4 is for responding to the light transmittance of described rete.
It should be noted that, this rete etching antisitic defect watch-dog, can adopt independent transmitance monitoring equipment to realize, but consider production efficiency, device and the etching technics of monitoring light transmittance can also be become one.
Concrete, it is vacuum chamber 1 that chamber is set, described vacuum chamber is communicated with reacting gas source 2;
In vacuum chamber 1, be also provided with etching device;
Etching apparatus in the present embodiment is for doing equipment at quarter, it specifically comprises top crown 5 and the bottom crown 6 being oppositely arranged, one of them pole plate ground connection, and another one pole plate connects radio-frequency power supply 7, wherein, this radio-frequency power supply 7 provides radio-frequency current to produce the plasma that substrate 8 is carried out to corrasion.
Concrete, this light source 3 can be positioned at top crown 5 tops or the upper wall of vacuum chamber 1, and its light beam is irradiated downwards, forms perpendicular light source, and certainly, this light source also can be positioned at the sidewall of vacuum chamber 1, makes its light beam oblique illumination, forms inclination light source.
It should be noted that, etching apparatus in the present embodiment its except selecting the etching apparatus in the present embodiment, also can select other equipment at dry quarter of prior art, for example plasma etching (PE) pattern device, inductively coupled plasma etching (ICP) pattern substrate are positioned on bottom crown;
In order to monitor the uniformity of whole substrate transmitance, the quantity of this light sensation probe 4 can be set to 5-25, and it is evenly distributed on bottom crown.Certainly, the quantity of this light sensation probe 4 can be determined according to demand.In addition, this equipment also comprises flowmeter 9, and it is for controlling reacting gas source to the amount of the reacting gas passing in vacuum chamber.
Preferably, described vacuum chamber 1 connects vacuum pump 10, vacuum gauge 11 and pressure switch 12, for maintaining and control the vacuum degree in vacuum chamber.
While adopting this equipment, in the time of after the dry etching of above-mentioned steps S302, obtain the reference data of transmitance, then when step S304 dry etching, detect and compare with reference data.
It should be noted that, because the plasma that dry quarter, equipment produced when working is known from experience the impact that the light that light source is produced plays interference, so need to suspend the generation (be interrupted as adopted methods such as supplying with radio-frequency power supply, be divided into power-on time section and power-off time section) of plasma when detecting.
By setting up light source and light sensation is popped one's head in etching apparatus, can the etching situation of Real-Time Monitoring in via etch process, be conducive to simple and effective control etching degree, can work as while being etched to active layer and stop in time etching, guarantee that the performance of active layer is not destroyed; Several monitoring points are set in addition, can monitor the etching homogeneity of whole substrate, be conducive to improve the yield of preparing large-area polycrystalline silicon substrate.
Foregoing description provides for example with for the purpose of describing, and is not exhaustively or by the utility model to be limited to disclosed form.Many modifications and variations are obvious for the ordinary skill in the art.Selecting and describing embodiment is for better explanation principle of the present utility model and practical application, thereby and makes those of ordinary skill in the art can understand the various embodiment with various modifications that the utility model design is suitable for special-purpose.
Claims (7)
1. a rete etching antisitic defect watch-dog, is characterized in that, comprises chamber, is provided with light source and several light sensations probe in described chamber, and described light source irradiates to the described rete on substrate, and described light sensation probe is for responding to the light transmittance of described rete.
2. watch-dog as claimed in claim 1, is characterized in that, described chamber is vacuum chamber, and described vacuum chamber is communicated with reacting gas source; In described vacuum chamber, be provided with etching device.
3. watch-dog as claimed in claim 2, is characterized in that, described etching device specifically comprises:
The top crown being oppositely arranged and bottom crown, one of them pole plate ground connection, another one pole plate connects radio-frequency power supply, makes generation between top crown and bottom crown to substrate, carry out the plasma of etching;
Described bottom crown is for placing substrate to be etched.
4. watch-dog as claimed in claim 3, is characterized in that, described light source is positioned on described top crown;
Or described light source is positioned at the sidewall of vacuum chamber;
Or described light source is positioned at the upper wall of vacuum chamber.
5. watch-dog as claimed in claim 4, is characterized in that, described light sensation probe is arranged at described bottom crown away from a side of described substrate.
6. watch-dog as claimed in claim 1 or 2, is characterized in that, the quantity of described light sensation probe is 5-25, is uniformly distributed.
7. watch-dog as claimed in claim 1 or 2, is characterized in that, also comprises that described radio-frequency power supply carries out the monitoring of the light transmittance of rete in power-off time section for providing radio-frequency current to produce the radio-frequency power supply of plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320851584.4U CN203882952U (en) | 2013-12-20 | 2013-12-20 | Equipment for monitoring etching damage of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320851584.4U CN203882952U (en) | 2013-12-20 | 2013-12-20 | Equipment for monitoring etching damage of film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203882952U true CN203882952U (en) | 2014-10-15 |
Family
ID=51683426
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320851584.4U Expired - Lifetime CN203882952U (en) | 2013-12-20 | 2013-12-20 | Equipment for monitoring etching damage of film |
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| Country | Link |
|---|---|
| CN (1) | CN203882952U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671640A (en) * | 2018-12-25 | 2019-04-23 | 深圳市华星光电技术有限公司 | The monitoring method of active layer thickness |
| CN110530825A (en) * | 2018-05-23 | 2019-12-03 | 亚智科技股份有限公司 | Etching period method for detecting and etching period detecting system |
-
2013
- 2013-12-20 CN CN201320851584.4U patent/CN203882952U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110530825A (en) * | 2018-05-23 | 2019-12-03 | 亚智科技股份有限公司 | Etching period method for detecting and etching period detecting system |
| CN109671640A (en) * | 2018-12-25 | 2019-04-23 | 深圳市华星光电技术有限公司 | The monitoring method of active layer thickness |
| CN109671640B (en) * | 2018-12-25 | 2020-09-08 | 深圳市华星光电技术有限公司 | Method for monitoring thickness of active layer |
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