CN203456472U - Thin film transistor and display apparatus - Google Patents
Thin film transistor and display apparatus Download PDFInfo
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- CN203456472U CN203456472U CN201320613194.3U CN201320613194U CN203456472U CN 203456472 U CN203456472 U CN 203456472U CN 201320613194 U CN201320613194 U CN 201320613194U CN 203456472 U CN203456472 U CN 203456472U
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Abstract
The embodiment of the utility model discloses a thin film transistor and a display apparatus and relates to the field of displays. According to the utility model, the crystal grain size and uniformity of a low-temperature polycrystalline silicon thin film can be improved; the energy of incident laser can be fully utilized; the reduction of the production cost of the low-temperature polycrystalline silicon thin film can be facilitated; and the performance of the low-temperature polycrystalline silicon thin film transistor can be improved. The thin film transistor comprises an active layer arranged on a substrate and an insulating thin film located on the active layer. The active layer is made of the low-temperature polycrystalline silicon thin film, and the insulating thin film is an optical anti-reflection thin film. The surface of the optical anti-reflection thin film is provided with light-gathering structures distributed in an array. The thin film transistor is applied to the display apparatus.
Description
Technical field
The utility model relates to Display Technique field, relates in particular to a kind of thin-film transistor and display unit.
Background technology
At present, conventional active type array liquid crystal display adopts amorphous silicon film transistor and polycrystalline SiTFT more.Wherein, polycrystalline SiTFT (Thin Film Transistor, be called for short TFT) due to have higher electron mobility, aperture opening ratio high, faster response speed, can significantly dwindle size of components, resolution high, can make the advantages such as Driving Integrate Circuit, being more suitable for jumbo high frequency shows, be conducive to improve the rate of finished products of display and reduce production costs, and be widely used.
Make the conventional quasi-molecule laser annealing method of low-temperature polysilicon film, the basic principle of the method, for utilizing high-octane excimer laser irradiation to amorphous silicon membrane surface, makes amorphous silicon thawing, cooling, recrystallization, realizes the transformation from amorphous silicon to polysilicon.The crystal grain of the low-temperature polysilicon film that quasi-molecule laser annealing legal system is standby is large, spatial selectivity good, intracrystalline imperfection is few, electrology characteristic is good, become main method prepared by current low-temperature polysilicon film.
And in the prior art, very difficult realization is even, the preparation of the low-temperature polysilicon film of large scale crystal grain, and incident laser is reflected to a great extent, wasted greatly the energy of incident laser, be unfavorable for realizing the cost degradation that low-temperature polysilicon film is produced, be unfavorable for improving the performance of low-temperature polysilicon film transistor.
Utility model content
The utility model provides a kind of thin-film transistor and display unit, can improve crystallite dimension and the uniformity of low-temperature polysilicon film, and can make full use of the energy of incident laser, and be conducive to reduce the production cost of low-temperature polysilicon film, improved the performance of low-temperature polysilicon film transistor.
For solving the problems of the technologies described above, the utility model provides a kind of thin-film transistor, and this thin-film transistor comprises the active layer that is arranged on underlay substrate and be positioned at the insulation film on active layer, and the material of described active layer is low-temperature polysilicon film; Described insulation film is antireflection film, and described antireflection film surface has the concentration structure of array arrangement.
Described thin-film transistor also comprises: the resilient coating between described underlay substrate and described low-temperature polysilicon film, the nitride that the material of described resilient coating is silicon or the oxide of silicon.
A kind of thin-film transistor is provided in the utility model embodiment, this thin-film transistor uses crystallite dimension large, the low-temperature polysilicon film of good uniformity is as active layer, improved the conductivity of active layer, thereby improved the performance of low-temperature polysilicon film transistor, further improved the display effect of liquid crystal display.
The utility model embodiment also provides a kind of display unit, comprises thin-film transistor as above.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
A kind of low-temperature polysilicon film preparation method flow chart of Fig. 1 for providing in the utility model embodiment;
A kind of low-temperature polysilicon film preparation method schematic diagram of Fig. 2 for providing in the utility model embodiment;
The another kind of low-temperature polysilicon film preparation method schematic diagram of Fig. 3 for providing in the utility model embodiment;
The quasi-molecule laser annealing process schematic diagram of Fig. 4 for providing in the utility model embodiment;
The structural representation that Fig. 5 is the low-temperature polysilicon film transistor that provides in the utility model embodiment.
Description of reference numerals:
101-substrate; 102-resilient coating; 103-amorphous silicon membrane;
The amorphous silicon membrane of 103a-concentration structure below; The amorphous silicon membrane of the etch areas of 103b-not below;
104-antireflection film; 105-concentration structure; 106-nucleus;
107-low-temperature polysilicon film; 108-grid; 109-source electrode;
110-drain electrode.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is the utility model part embodiment, rather than whole embodiment.Embodiment based in the utility model, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
The utility model embodiment provides a kind of preparation method of low-temperature polysilicon film, and as shown in Figure 1, the method comprises:
Step S1, on substrate deposition of amorphous silicon films.
Preferably, as shown in Figure 2, before deposition of amorphous silicon films, can also on substrate 101, deposit one deck resilient coating 102, it can be the nitride of silicon or the oxide of silicon.
Deposition of amorphous silicon films 103 on the substrate 101 that has deposited resilient coating 102, conventionally, deposit thickness is about the amorphous silicon membrane 103 of 50nm.
Wherein, the effect of resilient coating 102 is substrate 101 isolated with amorphous silicon membrane 103, avoid impurity in substrate to enter amorphous silicon membrane 103, affect the performance of amorphous silicon membrane 103, can reduce in addition the thermal diffusion between amorphous silicon membrane 103 and substrate 101, reduce the impact of temperature on substrate 101 in laser irradiation process.
The preferred plasma enhanced chemical vapor deposition of deposition of the deposition of resilient coating 102 and amorphous silicon membrane 103 (Plasma Enhanced Chemical Vapor Deposition, abbreviation PECVD) method, other generation types all can as low-pressure chemical vapor deposition (Low Pressure Vapor Deposition, be called for short LPCVD) or the mode of sputter.
Step S2, on amorphous silicon membrane, cover antireflection film.
As shown in Figure 2, on amorphous silicon membrane 103, deposit one deck antireflection film 104.Material requirements as antireflection film 104 has good transmission effects to excimer laser, and absorption coefficient is low, and laser energy can effectively be loaded on amorphous silicon membrane 103, and therefore, antireflection film is preferably the nitride of silicon or the oxide of silicon.This antireflection film 104 can be single thin film, can be also plural layers, and thickness can be according to actual conditions setting.Its anti-reflection action principle to laser is: the optical path difference of the laser of antireflection film 104 upper and lower surfaces reflections is half odd-multiple of optical maser wavelength, the reverberation of antireflection film 104 upper and lower surfaces interferes, cancel out each other, the energy of laser is all absorbed by amorphous silicon membrane 103, and the energy of laser is fully used.
Preferred λ/4 of thickness of antireflection film 104, wherein λ is the wavelength that laser is propagated in antireflection film 104, in addition, can realize incident laser and be irradiated to antireflection film 104 upper and lower surfaces, the laser of upper and lower surface reflection is mutually interfered and is offset outside generation of antireflection film 104, thereby the thickness making full use of of realizing laser energy all can, the utility model embodiment does not limit this.
The method of the preferred PECVD of deposition of antireflection film 104, other generation types all can as the mode of LPCVD or sputter.
Step S3, antireflection film is carried out to photoetching, make antireflection film surface there is the concentration structure of array arrangement.
On antireflection film 104, be coated with one deck photoresist, then use the mask plate with concentration structure 105 consistent patterns with array arrangement to hide, then expose, development, etching, last stripping photoresist, forms concentration structures 105 on antireflection film 104 surfaces.In the process that forms concentration structure 105, conventionally adopt wet etching, because wet etching has isotropic feature, in etching process, the center etching in region of being etched is serious, etching edge is slight, therefore, and as shown in Figure 2, the sunk structure of the concentration structure 105 forming for arranging at antireflection film 104 surface arrays, the bottom surface of depression is sphere.
The concentration structure 105 with the bottom surface of sphere, is similar to concavees lens to the regulating action of incident ray, by the refraction to incident laser, incident laser is converged on the amorphous silicon membrane of the below of etch areas not, thereby realizes the regulating action to incident laser.
The size of concentration structure 105 is determined by Lithographic template, conventionally, as shown in Figure 2, about 500nm～5 of the diameter d of concentration structure 105 μ m, adjacent two concentration structure edge minimum distance l are about 500nm～5 μ m, and the diameter d of concentration structure and adjacent two concentration structure edge minimum distance l ratios are about 1:1.
The preferred isotropic wet etching of formation of concentration structure, also can be other etchings or patterning method, the depression that is similar to concavees lens that the preferred bottom surface of concentration structure is sphere, in addition all can realization all can at the concentration structure of amorphous silicon membrane surface energy profile adjustment function to incident laser, it can be the combination of single concentration structure or multiple concentration structure, as shown in Figure 3, antireflection film 104 surfaces have spherical protuberances, and the concentration structure that is similar to convex lens also can be realized the regulation and control to incident laser.Ear Mucosa Treated by He Ne Laser Irradiation is to being similar to behind the concentration structure surface of convex lens, and light emission refraction, converges on the amorphous silicon membrane of concentration structure below incident laser, the regulating action of realization to incident laser, make the projecting temperature of local temperature, low-temperature space nucleation is very fast, is conducive to crystal grain cross growth.
As shown in Figure 2, after antireflection film 104 surface forms concentration structures 105, amorphous silicon membrane 103 can be divided into and is positioned at the amorphous silicon membrane 103a of concentration structure below and is positioned at the not amorphous silicon membrane 103b of etch areas below.
Step S4, to being coated with the amorphous silicon membrane of antireflection film, carry out Ear Mucosa Treated by He Ne Laser Irradiation, make amorphous silicon membrane be converted into low-temperature polysilicon film.
To being coated with the amorphous silicon membrane 103 of antireflection film 104, carry out quasi-molecule laser annealing technique, as shown in Figure 4.Quasi-molecule laser annealing utilizes the moment high-energy that produces of laser pulse to incide amorphous silicon membrane 103 surfaces, and energy moment of laser is absorbed by amorphous silicon membrane 103, without too much heat, is passed to substrate 101, and substrate 101 damages are little.
Particularly, the process that amorphous silicon membrane 103 changes polysilicon membrane into is roughly: Ear Mucosa Treated by He Ne Laser Irradiation to described in be coated with amorphous silicon membrane 103 surfaces of antireflection film 104, the laser that 105 pairs of concentration structures incide its top has disperse function, the laser of incident is refracted, the amorphous silicon membrane 103a region laser energy density of concentration structure below, a little less than average laser energy density, has relatively low temperature.Ear Mucosa Treated by He Ne Laser Irradiation is to amorphous silicon membrane 103 surfaces that are coated with antireflection film 104, etch areas surface does not have the antireflection film 104 that thickness is λ/4, laser is almost nil in the reflection loss in this region, the energy of laser is all absorbed by the amorphous silicon membrane 103b of the below of etch areas not, and the energy of incident laser is fully used.In addition due to the disperse function of 105 pairs of laser of concentration structure, make amorphous silicon membrane 103b region laser energy density a little more than average laser energy density, there is relatively high temperature.Concentration structure 105 is uniformly distributed at amorphous silicon membrane 103 surface periodics, because it has the above-mentioned regulating action to laser energy, what make the laser energy cycle is distributed in amorphous silicon membrane 103 surfaces, thereby cause amorphous silicon membrane 103 inside to occur the temperature gradient of periodic distribution, the amorphous silicon membrane 103a temperature of concentration structure below is lower, is easy to crystallization and forms nucleus 106.Under the guiding of temperature gradient, nucleus 106 carries out grain growth to surrounding, finally grows crystallite dimension large, uniformly low-temperature polysilicon film.
Further, the size of the grain size of the low-temperature polysilicon film growing and uniformity and concentration structure 105 and uniformity have direct relation, concentration structure 105 sizes are larger, the crystallite dimension of the low-temperature polysilicon film growing is larger, and low-temperature polysilicon film crystallite dimension can reach micron level conventionally; Concentration structure is more even in amorphous silicon membrane surface distributed, and the crystal grain of the low-temperature polysilicon film growing is more even.
The low-temperature polysilicon film of preparation has larger crystallite dimension and uniformity as mentioned above, thereby has good electric property.
In addition, to being coated with the amorphous silicon membrane 103 of antireflection film 104, carrying out Ear Mucosa Treated by He Ne Laser Irradiation, making before amorphous silicon membrane 103 is converted into low-temperature polysilicon film, can also carry out dehydrogenation to amorphous silicon membrane 103; Particularly, at 450 ℃, amorphous silicon membrane 103 is carried out to 2 hours dehydrogenations of high-temperature baking, make the hydrogen content in amorphous silicon membrane 103 be less than 2%, prevent from occurring the quick-fried phenomenon of hydrogen in quasi-molecule laser annealing process.
In the technical scheme of the present embodiment, a kind of manufacture method of low-temperature polysilicon film is provided, the method by covering one deck antireflection film on amorphous silicon membrane, by photoetching be etched in antireflection film surface and form concentration structure, use the method for quasi-molecule laser annealing to make amorphous silicon membrane change low-temperature polysilicon film into.The low-temperature polysilicon film crystallite dimension of utilizing the method to prepare is large, is evenly distributed, and has good electric property.In addition, the method takes full advantage of excimer laser energy, is conducive to reduce production costs, and is beneficial to and realizes large-scale low-cost production.
Based on the corresponding method of above-mentioned Fig. 1, the utility model embodiment also provides a kind of thin-film transistor, as shown in Figure 5.
This thin-film transistor, comprises the active layer being arranged on underlay substrate 101 and is positioned at the insulation film on active layer, the material of active layer is low-temperature polysilicon film 107; Insulation film is antireflection film 104, and antireflection film 104 surfaces have the concentration structure 105 of array arrangement.
A kind of thin-film transistor is provided in the utility model embodiment, this thin-film transistor uses crystallite dimension large, the low-temperature polysilicon film of good uniformity is as active layer, improved the conductivity of active layer, thereby improved the performance of low-temperature polysilicon film transistor, further improved the display effect of liquid crystal display.
Particularly, the thickness of low-temperature polysilicon film 107 is 50nm.One deck antireflection film 104 that distributes on low-temperature polysilicon film 107, these antireflection film 104 effects are equivalent to gate insulation layer, do not need to deposit separately gate insulation layer in low-temperature polysilicon film transistor manufacturing process.In addition, antireflection film 104 surface distributed have the concentration structure 105 of array arrangement.On antireflection film 104, form grid 108.Afterwards, utilize grid 108 as mask, to be adulterated in the source contact area of low-temperature polysilicon film 107 and drain contact region, and make source electrode 109 and drain electrode 110 above the source contact area forming and drain contact region, source electrode 109 directly contacts with low-temperature polysilicon film 107 with drain electrode 110, forms thin-film transistor.
In above-mentioned thin-film transistor, concentration structure 105 can be the sunk structure of arranging at antireflection film 104 surface arrays, and the bottom surface of depression is sphere.Alternatively, about 500nm～5 of the diameter d of concentration structure 105 μ m, adjacent two concentration structure edge minimum distance l are about 500nm～5 μ m, and the diameter d of concentration structure and adjacent two concentration structure edge minimum distance l ratios are about 1:1.
In addition, this thin-film transistor also comprises resilient coating 102, the nitride that the material of resilient coating 102 is silicon or the oxide of silicon.
Further, the utility model embodiment also provides a kind of display unit, and this display unit comprises above-mentioned thin-film transistor.This display unit can be liquid crystal panel, Electronic Paper, OLED(Organic Light Emitting Diode, Organic Light Emitting Diode) any product or parts with Presentation Function such as panel, LCD TV, liquid crystal display, DPF, mobile phone, panel computer.
The above; it is only embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of described claim.
Claims (3)
1. a thin-film transistor, comprises the active layer being arranged on underlay substrate and is positioned at the insulation film on described active layer, it is characterized in that,
The material of described active layer is low-temperature polysilicon film;
Described insulation film is antireflection film, and described antireflection film surface has the concentration structure of array arrangement.
2. thin-film transistor according to claim 1, is characterized in that, also comprises:
Resilient coating between described underlay substrate and described active layer, the nitride that the material of described resilient coating is silicon or the oxide of silicon.
3. a display unit, is characterized in that, comprises the thin-film transistor as described in claim 1-2 any one.
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| CN201320613194.3U CN203456472U (en) | 2013-09-29 | 2013-09-29 | Thin film transistor and display apparatus |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489788A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor and display device |
| US9349870B2 (en) | 2013-09-29 | 2016-05-24 | Boe Technology Group Co., Ltd | Method for forming low-temperature polysilicon thin film, thin film transistor and display device |
| CN108831894A (en) * | 2018-06-14 | 2018-11-16 | 深圳市华星光电技术有限公司 | Production method, low-temperature polysilicon film and the low temperature polycrystalline silicon TFT substrate of low-temperature polysilicon film |
| CN112987368A (en) * | 2021-02-08 | 2021-06-18 | 武汉华星光电技术有限公司 | Array substrate, liquid crystal display panel and liquid crystal display device |
-
2013
- 2013-09-29 CN CN201320613194.3U patent/CN203456472U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489788A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor and display device |
| WO2015043081A1 (en) * | 2013-09-29 | 2015-04-02 | 京东方科技集团股份有限公司 | Method for manufacturing low-temperature polycrystalline silicon thin film, thin film transistor, and display apparatus |
| CN103489788B (en) * | 2013-09-29 | 2015-10-21 | 京东方科技集团股份有限公司 | The preparation method of low-temperature polysilicon film, thin-film transistor and display unit |
| US9349870B2 (en) | 2013-09-29 | 2016-05-24 | Boe Technology Group Co., Ltd | Method for forming low-temperature polysilicon thin film, thin film transistor and display device |
| CN108831894A (en) * | 2018-06-14 | 2018-11-16 | 深圳市华星光电技术有限公司 | Production method, low-temperature polysilicon film and the low temperature polycrystalline silicon TFT substrate of low-temperature polysilicon film |
| CN112987368A (en) * | 2021-02-08 | 2021-06-18 | 武汉华星光电技术有限公司 | Array substrate, liquid crystal display panel and liquid crystal display device |
| CN112987368B (en) * | 2021-02-08 | 2023-12-26 | 武汉华星光电技术有限公司 | Array substrate, liquid crystal display panel and liquid crystal display device |
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Granted publication date: 20140226 Termination date: 20210929 |