CN203872363U - Small-packaging low-power consumption surface mount type LTE networking module - Google Patents
Small-packaging low-power consumption surface mount type LTE networking module Download PDFInfo
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- CN203872363U CN203872363U CN201420304406.4U CN201420304406U CN203872363U CN 203872363 U CN203872363 U CN 203872363U CN 201420304406 U CN201420304406 U CN 201420304406U CN 203872363 U CN203872363 U CN 203872363U
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 6
- 230000006855 networking Effects 0.000 title abstract 2
- 238000012545 processing Methods 0.000 claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 8
- 230000010354 integration Effects 0.000 claims description 3
- 238000012827 research and development Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The utility model provides a small-packaging low-power consumption surface mount type LTE networking module comprising a main body that is formed by integrated packaging. An LTE radio frequency signal processing module, a baseband signal processing module, and a power module are arranged in the main body. The LTE radio frequency signal processing module consists of a radio frequency emission chip, a first filter, a power amplifier, a second filter, a duplexer, a main antenna, a third filter, a first low-noise amplifier, a fourth filter, a fifth filter, a second low-noise amplifier, a sixth filter, and an auxiliary antenna. The baseband signal processing module is formed by a baseband processing chip, a memory, and a power management unit. The power management unit is respectively connected with the LTE radio frequency signal processing module, the baseband processing chip, and the memory; the baseband processing chip is connected with the radio frequency emission chip; the power module is formed by a control circuit and a power conversion chip, wherein the control circuit and the power conversion chip are mutually connected; and the power module and the baseband signal processing module are connected.
Description
Technical field
The utility model relates to a kind of on-line module, particularly discloses the SMD LTE on-line module of a kind of little encapsulation low-power consumption.
Background technology
Panel computer product great majority are with wireless wifi access public network at present, due to wifi coverage not as operator wireless base station wide, user cannot enjoy the facility that LTE network brings whenever and wherever possible, and when the equipment that accesses same wifi network is too much, easily cause and go offline, the problems such as rate reduction, bring great inconvenience to user.
The design of LTE wireless communication system circuit is complicated, and the R&D cycle is long, and debugging difficulty is large, and the high restriction that waits factors of manufacturing technique requirent makes panel computer manufacturer be reluctant to drop into a large amount of energy and researches and develops the product of supporting LTE network.
Summary of the invention
The purpose of this utility model is to overcome the defect existing in prior art, a kind of little encapsulation, low-power consumption are provided, facilitate panel computer manufacturer rapid Design to go out the panel computer product with LTE function, reduce design difficulty, shorten the SMD LTE on-line module of little encapsulation low-power consumption of R&D cycle.
The utility model is achieved in that the SMD LTE on-line module of a kind of little encapsulation low-power consumption, it is characterized in that: comprise the main body that integration packaging forms, described main body comprises LTE radio-frequency signal processing module, baseband signal processing module, power module, described LTE radio-frequency signal processing module is by radio-frequency transmissions chip, the first filter, power amplifier, the second filter, duplexer, main antenna, the 3rd filter, the first low noise amplifier, the 4th filter, the 5th filter, the second low noise amplifier, the 6th filter, auxiliary antenna forms, described radio-frequency transmissions chip, the first filter, power amplifier, the second filter, duplexer, the 3rd filter, the first low noise amplifier, the 4th filter is connected successively, wherein said duplexer is also connected with described main antenna, described the 4th filter is also connected with described rf chip, described auxiliary antenna, the 6th filter, the second low noise amplifier, the 5th filter are connected successively, and described the 5th filter is also connected with described rf chip, described baseband signal processing module is comprised of baseband processing chip, memory, Power Management Unit, described Power Management Unit is connected with described LTE radio-frequency signal processing module, baseband processing chip, memory respectively, and described baseband processing chip is connected with described radio-frequency transmissions chip, described power module is comprised of interconnective control circuit, power conversion chip, and described power module is connected with described baseband signal processing module.
Described power module comprises described power conversion chip U105, external power source input POWER_EN, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first capacitor C 1, the second capacitor C 2, triode Q1, the second resistance R 2, metal-oxide-semiconductor Q2, power voltage supply end VCC_IN, voltage output end VCC_3V3, includes PS/SYNC pin, FB pin, Vout pin on described power conversion chip U105;
The base stage of described triode Q1 is connected with one end of described external power source input POWER_EN, the first resistance R 1 respectively, the other end ground connection of described the first resistance R 1; The grounded emitter of described triode Q1, the collector electrode of described triode Q1 is connected with one end of the second resistance R 2, the grid of metal-oxide-semiconductor Q2 respectively, the source electrode of described metal-oxide-semiconductor Q2 is connected with the other end, the power voltage supply end VCC_IN of described the second resistance R 2 respectively, the drain electrode of described metal-oxide-semiconductor Q2 is connected with one end of described the 3rd resistance R 3, the other end of described the 3rd resistance R 3 is connected with the PS/SYNC pin of described power conversion chip U105, one end of the 4th resistance R 4 respectively, the other end ground connection of described the 4th resistance R 4; The Vout pin of described power conversion chip U105 respectively with one end of described the 5th resistance R 5, one end of one end of the first capacitor C 1, the second capacitor C 2, voltage output end VCC_3V3 are connected, the other end of the other end of described the first capacitor C 1, the second capacitor C 2 is ground connection respectively; The other end of described the 5th resistance R 5 is connected with one end of described the 6th resistance R 6, the FB pin of power conversion chip U105 respectively, the other end ground connection of described the 6th resistance R 6.
Described main body is encapsulated and is formed by PLCC, and the size of described main body is 26 * 36mm, is highly 2.5mm.
The beneficial effects of the utility model are: reduce debugging difficulty and debugging work load, improve data transmission bauds, shorten the research and development of products cycle, and only lower than the stand-by power consumption of 10mW, add the packing forms of PLCC, make product be beneficial to production; The utility model can meet the product demand that current panel computer outward appearance is tending towards lightening, the simplification of products, processing mass, shorten the research and development of products cycle, improving product quality, making to apply panel computer of the present utility model can produce fast and introduce to the market.
Accompanying drawing explanation
Fig. 1 is the utility model frame structure schematic diagram.
Fig. 2 is the electrical block diagram of the utility model power module.
Embodiment
According to Fig. 1, Fig. 2, the utility model comprises the main body that integration packaging forms, and described main body is encapsulated and formed by PLCC, and the size of described main body is 26 * 36mm, is highly 2.5mm.Described main body comprises LTE radio-frequency signal processing module, baseband signal processing module, power module, described LTE radio-frequency signal processing module is by radio-frequency transmissions chip, the first filter, power amplifier, the second filter, duplexer, main antenna, the 3rd filter, the first low noise amplifier, the 4th filter, the 5th filter, the second low noise amplifier, the 6th filter, auxiliary antenna forms, described radio-frequency transmissions chip, the first filter, power amplifier, the second filter, duplexer, the 3rd filter, the first low noise amplifier, the 4th filter is connected successively, wherein said duplexer is also connected with described main antenna, described the 4th filter is also connected with described rf chip, described auxiliary antenna, the 6th filter, the second low noise amplifier, the 5th filter are connected successively, and described the 5th filter is also connected with described rf chip, described baseband signal processing module is comprised of baseband processing chip, memory, Power Management Unit, described Power Management Unit is connected with described LTE radio-frequency signal processing module, baseband processing chip, memory respectively, and described baseband processing chip is connected with described radio-frequency transmissions chip, described power module is comprised of interconnective control circuit, power conversion chip, and described power module is connected with described baseband signal processing module.
Described power module comprises described power conversion chip U105, external power source input POWER_EN, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first capacitor C 1, the second capacitor C 2, triode Q1, the second resistance R 2, metal-oxide-semiconductor Q2, power voltage supply end VCC_IN, voltage output end VCC_3V3, includes PS/SYNC pin, FB pin, Vout pin on described power conversion chip U105.
The base stage of described triode Q1 is connected with one end of described external power source input POWER_EN, the first resistance R 1 respectively, the other end ground connection of described the first resistance R 1; The grounded emitter of described triode Q1, the collector electrode of described triode Q1 is connected with one end of the second resistance R 2, the grid of metal-oxide-semiconductor Q2 respectively, the source electrode of described metal-oxide-semiconductor Q2 is connected with the other end, the power voltage supply end VCC_IN of described the second resistance R 2 respectively, the drain electrode of described metal-oxide-semiconductor Q2 is connected with one end of described the 3rd resistance R 3, the other end of described the 3rd resistance R 3 is connected with the PS/SYNC pin of described power conversion chip U105, one end of the 4th resistance R 4 respectively, the other end ground connection of described the 4th resistance R 4; The Vout pin of described power conversion chip U105 respectively with one end of described the 5th resistance R 5, one end of one end of the first capacitor C 1, the second capacitor C 2, voltage output end VCC_3V3 are connected, the other end of the other end of described the first capacitor C 1, the second capacitor C 2 is ground connection respectively; The other end of described the 5th resistance R 5 is connected with one end of described the 6th resistance R 6, the FB pin of power conversion chip U105 respectively, the other end ground connection of described the 6th resistance R 6.
Described power module is controlled described triode Q1 conducting or is closed by external power source input POWER_EN, and the conducting of triode Q1 or shutdown signal are controlled described metal-oxide-semiconductor Q2 conducting or closed, and realizes the control to power circuit; Power voltage supply end VCC_IN provides voltage to the Power Management Unit of described baseband signal processing module by described metal-oxide-semiconductor Q2, then by power conversion chip U105, voltage is converted to stable 3.3V from 3.0V～5.5V and offers each module and use.
The power conversion chip U105 of described power module adopts the SC8800 series of products chip of TI (Texas Instrument), this chip is supported 2.5V～5.5V wide-range input voltage, have concurrently and boost and buck functionality, stable 3.3V can be provided, 2A output capacity, the premium properties that super fast response speed, low ripple, PSRR are system provides safeguard.The control circuit that adopts common triode Q102 to combine with low-power consumption MOSFET Q101 to form, can effectively control the break-make of power supply, reaches the effect of power and energy saving.
The baseband processing chip of described baseband signal processing module adopts the ALT3100 chip of altair company, for the treatment of various analog/digital signals, and LTE communication data is carried out to the processing such as encoding and decoding according to agreement regulation.
The rf chip of described LTE radio-frequency signal processing module is transmitted into wireless base station by the first filter, power amplifier, the second filter, duplexer, main antenna by the signal of coding; By main antenna, duplexer, the 3rd filter, the first low noise amplifier, the 4th filter, receive the wireless signal from base station, and be sent to baseband processing chip after decoding.
Claims (3)
1. the SMD LTE on-line module of little encapsulation low-power consumption, is characterized in that: comprise the main body that integration packaging forms, described main body comprises LTE radio-frequency signal processing module, baseband signal processing module, power module, described LTE radio-frequency signal processing module is by radio-frequency transmissions chip, the first filter, power amplifier, the second filter, duplexer, main antenna, the 3rd filter, the first low noise amplifier, the 4th filter, the 5th filter, the second low noise amplifier, the 6th filter, auxiliary antenna forms, described radio-frequency transmissions chip, the first filter, power amplifier, the second filter, duplexer, the 3rd filter, the first low noise amplifier, the 4th filter is connected successively, wherein said duplexer is also connected with described main antenna, described the 4th filter is also connected with described rf chip, described auxiliary antenna, the 6th filter, the second low noise amplifier, the 5th filter are connected successively, and described the 5th filter is also connected with described rf chip, described baseband signal processing module is comprised of baseband processing chip, memory, Power Management Unit, described Power Management Unit is connected with described LTE radio-frequency signal processing module, baseband processing chip, memory respectively, and described baseband processing chip is connected with described radio-frequency transmissions chip, described power module is comprised of interconnective control circuit, power conversion chip, and described power module is connected with described baseband signal processing module.
2. according to the SMD LTE on-line module of little encapsulation low-power consumption described in claim 1, it is characterized in that: described power module comprises described power conversion chip U105, external power source input POWER_EN, the first resistance R 1, the second resistance R 2, the 3rd resistance R 3, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the first capacitor C 1, the second capacitor C 2, triode Q1, the second resistance R 2, metal-oxide-semiconductor Q2, power voltage supply end VCC_IN, voltage output end VCC_3V3, on described power conversion chip U105, include PS/SYNC pin, FB pin, Vout pin,
The base stage of described triode Q1 is connected with one end of described external power source input POWER_EN, the first resistance R 1 respectively, the other end ground connection of described the first resistance R 1; The grounded emitter of described triode Q1, the collector electrode of described triode Q1 is connected with one end of the second resistance R 2, the grid of metal-oxide-semiconductor Q2 respectively, the source electrode of described metal-oxide-semiconductor Q2 is connected with the other end, the power voltage supply end VCC_IN of described the second resistance R 2 respectively, the drain electrode of described metal-oxide-semiconductor Q2 is connected with one end of described the 3rd resistance R 3, the other end of described the 3rd resistance R 3 is connected with the PS/SYNC pin of described power conversion chip U105, one end of the 4th resistance R 4 respectively, the other end ground connection of described the 4th resistance R 4; The Vout pin of described power conversion chip U105 respectively with one end of described the 5th resistance R 5, one end of one end of the first capacitor C 1, the second capacitor C 2, voltage output end VCC_3V3 are connected, the other end of the other end of described the first capacitor C 1, the second capacitor C 2 is ground connection respectively; The other end of described the 5th resistance R 5 is connected with one end of described the 6th resistance R 6, the FB pin of power conversion chip U105 respectively, the other end ground connection of described the 6th resistance R 6.
3. according to the SMD LTE on-line module of little encapsulation low-power consumption described in claim 1, it is characterized in that: described main body is encapsulated and formed by PLCC, the size of described main body is 26 * 36mm, is highly 2.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420304406.4U CN203872363U (en) | 2014-06-10 | 2014-06-10 | Small-packaging low-power consumption surface mount type LTE networking module |
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| CN201420304406.4U CN203872363U (en) | 2014-06-10 | 2014-06-10 | Small-packaging low-power consumption surface mount type LTE networking module |
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| CN203872363U true CN203872363U (en) | 2014-10-08 |
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| CN201420304406.4U Expired - Lifetime CN203872363U (en) | 2014-06-10 | 2014-06-10 | Small-packaging low-power consumption surface mount type LTE networking module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110545114A (en) * | 2019-08-12 | 2019-12-06 | 佳讯飞鸿（北京）智能科技研究院有限公司 | railway wireless communication terminal based on LTE-R |
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2014
- 2014-06-10 CN CN201420304406.4U patent/CN203872363U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110545114A (en) * | 2019-08-12 | 2019-12-06 | 佳讯飞鸿（北京）智能科技研究院有限公司 | railway wireless communication terminal based on LTE-R |
| CN110545114B (en) * | 2019-08-12 | 2021-10-22 | 佳讯飞鸿（北京）智能科技研究院有限公司 | Railway wireless communication terminal based on LTE-R |
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| CX01 | Expiry of patent term |
Granted publication date: 20141008 |
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| CX01 | Expiry of patent term |