CN203859119U - MIM capacitor and semiconductor device comprising MIM capacitor - Google Patents
MIM capacitor and semiconductor device comprising MIM capacitor Download PDFInfo
- Publication number
- CN203859119U CN203859119U CN201420042258.3U CN201420042258U CN203859119U CN 203859119 U CN203859119 U CN 203859119U CN 201420042258 U CN201420042258 U CN 201420042258U CN 203859119 U CN203859119 U CN 203859119U
- Authority
- CN
- China
- Prior art keywords
- film
- electric capacity
- layer
- titanium
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000003990 capacitor Substances 0.000 title abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000010936 titanium Substances 0.000 claims abstract description 41
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 41
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 24
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000004411 aluminium Substances 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims 2
- 230000007547 defect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 97
- 238000005516 engineering process Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The utility model provides an MIM capacitor and a semiconductor device comprising the MIM capacitor. The MIM capacitor at least comprises a dielectric layer which is a silicon nitride layer; and electrode plates of which at least one is an elastic electrode plate composed of one or multiple of a tantalum film, a tantalum nitride film, a titanium film or a titanium nitride film. According to the MIM capacitor, surface state and stress between the dielectric layer and the electrode plates can be improved by the elastic electrode in the MIM capacitor without generation of higher stress so that electric leakage caused by internal defects of dielectric substance is not induced.
Description
Technical field
The utility model relates to a kind of technical field of semiconductors, the semiconductor device that particularly relates to a kind of MIM electric capacity and comprise described MIM electric capacity.
Background technology
Along with the high speed development of radio communication, in mixed signal (Mixed Signal) chip, chip system (Soc) and radio circuit (RF), more and more higher to the requirement of integrated capacitance.
In traditional semiconductor fabrication technique, electric capacity is divided into two kinds: the PIP(Poly-Insulation-Poly forming based on FEOL, polysilicon-dielectric layer-polysilicon) electric capacity and the MIM(Metal-Insulation-Metal based on last part technology formation, metal-dielectric layer-metal) electric capacity.
Wherein, MIM electric capacity specifically as depicted in figs. 1 and 2, described MIM electric capacity mainly comprise lower electrode plate 1, electric pole plate 3 and be clipped in lower electrode plate 1 and electric pole plate 3 between dielectric layer 2.On described MIM electric capacity, mainly contain two types:
As shown in fig. 1, its battery lead plate is mainly aluminium to a kind of MIM electric capacity.In this MIM electric capacity, described lower electrode plate 1 comprise aluminium film 12 and lay respectively at aluminium film 12 upper and lower surfaces containing titanium metal film 11, described electric pole plate 3 comprises be close to the aluminium film 12 of described dielectric layer 2 and being positioned at and contains titanium metal film 11 on aluminium film 12.Wherein, described is the metal film that titanium film, titanium nitride film or titanium film and titanium nitride film constitute containing titanium metal film 11.Described dielectric layer 2 is silicon oxide layer or silicon nitride layer.
In the time that described dielectric layer 2 adopts silicon oxide layer, it contacts with electric pole plate 3 better with lower electrode plate 1, can not cause because stress is large capacity fall off.But the dielectric constant of silica is relatively little, make the identical MIM electric capacity of capacitance density, dielectric layer 2 can be thinner, and it is large that the MIM electric capacity forming like this has electric leakage, easily punctures equivalent risk.
In the time that described dielectric medium 2 adopts silicon nitride layer, because the dielectric constant of silicon nitride layer is relatively large, while making the identical MIM electric capacity of capacitance density, dielectric layer 2 can be thicker, is not easy to occur electric leakage and breakdown.But silicon nitride directly contacts and can produce larger stress with AL, can bring out dielectric medium 2 internal flaws and cause electric leakage.
As shown in Figure 2, its battery lead plate is mainly copper to another kind of MIM electric capacity, in the time adopting the top-level metallic interconnection layer of Damascus technics formation copper interconnection layer, forms.In this MIM electric capacity, described lower electrode plate 1 forms the copper layer 21 in the interlayer dielectric layer 30 in Damascus technics, the aluminium film 12 that described electric pole plate 3 is the described dielectric layer 2 of next-door neighbour and be positioned on aluminium film 12 containing tantalum metal films 22, described electric pole plate 3 also forms in the interlayer dielectric layer 30 in Damascus technics.Wherein, described is the metal film that tantalum film, nitrogenize tantalum film or tantalum film and nitrogenize tantalum film constitute containing tantalum metal films 22.Described dielectric layer 2 is silicon nitride layer.
Such MIM electric capacity is because dielectric layer 2 adopts silicon nitride, and because the dielectric constant of silicon nitride layer is relatively large, while making the identical MIM electric capacity of capacitance density, dielectric layer 2 can be thicker, is not easy to occur electric leakage and breakdown.And copper has good electric conductivity, can promote MIM electric capacity frequency.But, because copper has stronger diffusivity, easily infiltrate in dielectric layer 2, even can penetrate dielectric layer 2 and form therein hillock(mound shape defect), easily cause MIM capacity fall off even to lose efficacy.
Thus, now need a kind of MIM electric capacity, can avoid the defect of above-mentioned several MIM electric capacity, can show more excellent capacitance characteristic.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is the semiconductor device that a kind of MIM electric capacity is provided and comprises described MIM electric capacity, for solving the problem of prior art MIM capacitance characteristic.
For achieving the above object and other relevant objects, the utility model provides a kind of MIM electric capacity, and described MIM electric capacity at least comprises:
Dielectric layer, described dielectric layer is silicon nitride layer;
Battery lead plate, at least one battery lead plate is elastic plate electrode, described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.
Preferably, described battery lead plate is electric pole plate and lower electrode plate, lays respectively at upper surface and the lower surface of described dielectric layer.
Preferably, described top crown is elastic plate electrode, and described lower electrode plate is aluminium film.
Preferably, in described lower electrode plate, also comprise described aluminium lamination lower surface and between described aluminium lamination and described dielectric layer containing titanium metal film, described is the combination layer of titanium film, titanium nitride film or titanium film and titanium nitride film containing titanium metal film.
Preferably, in described elastic plate electrode, be close to described dielectric layer for tantalum film or titanium film.
Accordingly, the utility model also provides a kind of semiconductor device, at least comprises:
Semiconductor substrate;
Device layer, described device layer is positioned in described Semiconductor substrate;
Metal interconnecting layer, described metal interconnecting layer is positioned on described device layer, and comprises the top-level metallic interconnection layer that is positioned at the superiors;
MIM electric capacity as above, described MIM electric capacity flushes with described top-level metallic interconnection layer.
As mentioned above, MIM electric capacity of the present utility model and the semiconductor device that comprises described MIM electric capacity, have following beneficial effect:
At least one battery lead plate of MIM electric capacity that the utility model provides adopts elastic plate electrode, and described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.In some metals of commonly using in integrated circuit technology, the Young's modulus of metal tantalum and titanium is smaller, with the Surface Contact of silicon nitride layer, can improve as the surface state between dielectric layer and battery lead plate and stress, can not produce larger stress, be unlikely to bring out dielectric medium internal flaw and cause electric leakage yet.
In the MIM electric capacity that the utility model provides, owing to having applied described elastic electrode, can adopt silicon nitride that dielectric constant is larger as dielectric layer, can realize thicker dielectric layer, be not easy to occur electric leakage and breakdown.
In the semiconductor device that the utility model provides, described MIM electric capacity flushes with the top-level metallic interconnection layer in semiconductor device.Like this, described MIM electric capacity can form in the last part technology in integrated circuit technology.
Brief description of the drawings
Fig. 1 to Fig. 2 is shown as the structural representation of the MIM electric capacity in conventional art.
Fig. 3 be shown as in embodiment mono-, provide the structural representation of MIM electric capacity.
Fig. 4 is shown as the Performance Ratio of the MIM electric capacity in MIM electric capacity and the conventional art providing in embodiment mono-compared with schematic diagram.
The structural representation of the MIM electric capacity providing in embodiment mono-is provided Fig. 5.
Element numbers explanation
1 lower electrode plate
2 dielectric layers
3 electric pole plates
12 aluminium films
11 containing titanium metal film
20 interlayer dielectric layers
21 bronze medal layers
22 tantalum metal films
30 interlayer dielectric layers
101 containing titanium metal film
200 elastic plate electrodes
300 silicon nitride layers
Embodiment
By particular specific embodiment, execution mode of the present utility model is described below, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.
Refer to Fig. 3 to Fig. 5.Notice, appended graphic the illustrated structure of this specification, ratio, size etc., all contents in order to coordinate specification to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this specification, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the utility model without essence.
As shown in Figures 3 to 5, the utility model provides a kind of MIM electric capacity, at least comprises:
Dielectric layer 2, described dielectric layer is silicon nitride layer;
Battery lead plate, comprises lower electrode plate 1 and electric pole plate 3, the lower surface next-door neighbour of described lower electrode plate 1 and described dielectric layer 2, the upper surface next-door neighbour of described electric pole plate 3 and described dielectric layer 2.
Wherein, in described lower electrode plate 1 and described electric pole plate 3, at least one battery lead plate is elastic plate electrode 200, and described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.
Described dielectric layer 2 is silicon nitride layer 300.
Elaborate with specific embodiment the MIM electric capacity that technical scheme of the present invention provides below.
Embodiment mono-
The MIM electric capacity that the present embodiment provides specifically as shown in Figure 3.In described MIM electric capacity, described electric pole plate 3 is described elastic plate electrode.
Concrete, described MIM electric capacity comprises lower electrode plate 1 and electric pole plate 3, and is clipped in the dielectric layer 2 between described lower electrode plate 1 and electric pole plate 3.
Wherein, described dielectric layer is silicon nitride layer 300.
The lower surface next-door neighbour of described lower electrode plate 1 and described dielectric layer 2, described lower electrode plate 1 comprise aluminium film 12 and lay respectively at aluminium film 12 upper and lower surfaces containing titanium metal film 101, the described metal film constituting for titanium film, titanium nitride film or titanium film and titanium nitride film containing titanium metal film 101.
The upper surface next-door neighbour of described electric pole plate 3 and described dielectric layer 2, described electric pole plate 3 is described elastic plate electrode.Described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.Preferably, in described elastic plate electrode, what be close to described dielectric layer 2 is tantalum film or titanium film.
Wherein, in the present embodiment, described dielectric layer 2 adopts silicon nitride layer.Because the dielectric constant of silicon nitride layer is larger than silica, in the time making the identical MIM electric capacity of capacitance density, dielectric layer 2 can be thicker, is not easy to occur MIM capacity fall off and breakdown situation.
Described electric pole plate 3 adopts elastic plate electrode 200, and described elastic plate electrode 200 is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.
In integrated circuit technology and later stage device use procedure, have thermal process, dielectric layer (silicon nitride) and Metal Contact, the different deformation occurring of bi-material thermal coefficient of expansion is also different, the material stress that same deformation Young's modulus is less is corresponding less, and the also corresponding meeting of probability of surface stress small wood material generation dislocation reduces.
In some metals of commonly using in integrated circuit technology, the Young's modulus of metal tantalum and titanium is smaller, with the Surface Contact of silicon nitride layer, can improve surface state and stress between dielectric layer 2 and battery lead plate, can not produce larger stress, be unlikely to bring out dielectric medium 2 internal flaws and cause electric leakage yet.
Be illustrated in figure 4 the MIM capacitor I Leakage(leakage current I-leak in MIM electric capacity and the conventional art that the present embodiment provides) comparison diagram.Wherein transverse axis is two kinds of different MIM, and the longitudinal axis is the leakage current I-leak in electric capacity, and unit is ampere (A).Visible in figure, the leakage current of the MIM electric capacity that the present embodiment provides concentrates on E-11A, and the leakage current of the MIM electric capacity in conventional art concentrates on E-12A.As can be seen here, in the present embodiment, by improving surface state and the stress between dielectric medium and metal electrode at described electric pole plate 3, thereby improve MIM capacitance characteristic, can effectively improve the leakage current characteristic of electric capacity.
In addition, in the present embodiment, in described lower electrode plate 1, between aluminium film 12 upper surfaces and dielectric layer 2, be also containing titanium metal film 101, also can improve surface state and stress between dielectric layer 2 and battery lead plate, can not produce larger stress, be unlikely to bring out dielectric medium 2 internal flaws and cause electric leakage yet.
In addition, in the present embodiment, also provide a kind of semiconductor device, at least comprise:
Semiconductor substrate;
Device layer, described device layer is positioned in described Semiconductor substrate;
Metal interconnecting layer, described metal interconnecting layer is positioned on described device layer, and comprises the top-level metallic interconnection layer that is positioned at the superiors; MIM electric capacity as above, described MIM electric capacity flushes with described top-level metallic interconnection layer.
Like this, the MIM electric capacity that the present embodiment provides can form in the last part technology in integrated circuit technology.
Embodiment bis-
The MIM electric capacity that the present embodiment provides specifically as shown in Figure 5.In described MIM electric capacity, described lower electrode plate 1 and electric pole plate 3 are described elastic plate electrode.
Similar embodiment one, the dielectric layer of the MIM electric capacity providing in the present embodiment is silicon nitride layer 300; The upper surface next-door neighbour of described electric pole plate 3 and described dielectric layer 2, described electric pole plate 3 is described elastic plate electrode.Described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.Preferably, in described elastic plate electrode, what be close to described dielectric layer 2 is tantalum film or titanium film.
With embodiment mono-difference be, in the present embodiment, the upper surface next-door neighbour of described lower electrode plate 1 and described dielectric layer 2, described lower electrode plate 1 is described elastic plate electrode.Described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.Preferably, in described elastic plate electrode, what be close to described dielectric layer 2 is tantalum film or titanium film.
In the present embodiment, described lower electrode plate 1 and electric pole plate 3 adopt elastic plate electrode 200, and described elastic plate electrode 200 is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.In some metals of commonly using in integrated circuit technology, the Young's modulus of metal tantalum and titanium is smaller, with the Surface Contact of silicon nitride layer, can improve surface state and stress between dielectric layer 2 and battery lead plate, can not produce larger stress, be unlikely to bring out dielectric medium 2 internal flaws and cause electric leakage yet.
In addition, in the present embodiment, also provide a kind of semiconductor device, at least comprise:
Semiconductor substrate;
Device layer, described device layer is positioned in described Semiconductor substrate;
Metal interconnecting layer, described metal interconnecting layer is positioned on described device layer, and comprises the top-level metallic interconnection layer that is positioned at the superiors; MIM electric capacity as above, described MIM electric capacity flushes with described top-level metallic interconnection layer.
In sum, at least one battery lead plate of MIM electric capacity that the utility model provides adopts elastic plate electrode, and described elastic plate electrode is made up of one or several in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.In some metals of commonly using in integrated circuit technology, the Young's modulus of metal tantalum and titanium is smaller, with the Surface Contact of silicon nitride layer, can improve as the surface state between dielectric layer and battery lead plate and stress, can not produce larger stress, be unlikely to bring out dielectric medium internal flaw and cause electric leakage yet.
In the MIM electric capacity that the utility model provides, owing to having applied described elastic electrode, can adopt silicon nitride that dielectric constant is larger as dielectric layer, can realize thicker dielectric layer, be not easy to occur electric leakage and breakdown.
In the semiconductor device that the utility model provides, described MIM electric capacity flushes with the top-level metallic interconnection layer in semiconductor device.Like this, described MIM electric capacity can form in the last part technology in integrated circuit technology.
So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (6)
1. a MIM electric capacity, is characterized in that, described MIM electric capacity at least comprises:
Dielectric layer, described dielectric layer is silicon nitride layer;
Battery lead plate, at least one battery lead plate is elastic plate electrode, described elastic plate electrode is the composite laminate a kind of or that be stacked to constitute by several films in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film in tantalum film, nitrogenize tantalum film, titanium film or titanium nitride film.
2. MIM electric capacity according to claim 1, is characterized in that: described battery lead plate is electric pole plate and lower electrode plate, lays respectively at upper surface and the lower surface of described dielectric layer.
3. MIM electric capacity according to claim 2, is characterized in that: described electric pole plate is elastic plate electrode, and described lower electrode plate is aluminium film.
4. MIM electric capacity according to claim 3, it is characterized in that: in described lower electrode plate, also comprise described aluminium lamination lower surface and between described aluminium lamination and described dielectric layer containing titanium metal film, described is the composite laminate that titanium film, titanium nitride film or titanium film and titanium nitride film are stacked to constitute containing titanium metal film.
5. MIM electric capacity according to claim 1, is characterized in that: what in described elastic plate electrode, be close to described dielectric layer is tantalum film or titanium film.
6. a semiconductor device, is characterized in that: described semiconductor device at least comprises:
Semiconductor substrate;
Device layer, described device layer is positioned in described Semiconductor substrate;
Metal interconnecting layer, described metal interconnecting layer is positioned on described device layer, and comprises the top-level metallic interconnection layer that is positioned at the superiors;
MIM electric capacity as described in any one in claim 1 to 5, described MIM electric capacity flushes with described top-level metallic interconnection layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420042258.3U CN203859119U (en) | 2014-01-22 | 2014-01-22 | MIM capacitor and semiconductor device comprising MIM capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420042258.3U CN203859119U (en) | 2014-01-22 | 2014-01-22 | MIM capacitor and semiconductor device comprising MIM capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203859119U true CN203859119U (en) | 2014-10-01 |
Family
ID=51608960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420042258.3U Expired - Lifetime CN203859119U (en) | 2014-01-22 | 2014-01-22 | MIM capacitor and semiconductor device comprising MIM capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203859119U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860147A (en) * | 2019-02-22 | 2019-06-07 | 福建省福联集成电路有限公司 | A kind of stacked capacitor manufacturing method and semiconductor devices |
| CN114726334A (en) * | 2022-04-28 | 2022-07-08 | 重庆大学 | Acoustic wave resonator and manufacturing method thereof |
-
2014
- 2014-01-22 CN CN201420042258.3U patent/CN203859119U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860147A (en) * | 2019-02-22 | 2019-06-07 | 福建省福联集成电路有限公司 | A kind of stacked capacitor manufacturing method and semiconductor devices |
| CN114726334A (en) * | 2022-04-28 | 2022-07-08 | 重庆大学 | Acoustic wave resonator and manufacturing method thereof |
| CN114726334B (en) * | 2022-04-28 | 2023-08-08 | 重庆大学 | Acoustic wave resonator and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105226046A (en) | Metal-insulator-metal capacitor and preparation method thereof | |
| JP2012068627A5 (en) | Method for manufacturing semiconductor device | |
| CN106865486B (en) | Capacitive fingerprint sensing device and forming method thereof and electronic product | |
| CN206348571U (en) | A kind of array base palte, display panel and display device | |
| CN204028524U (en) | Display base plate and display device | |
| CN203859119U (en) | MIM capacitor and semiconductor device comprising MIM capacitor | |
| CN205069629U (en) | Metal level - insulating layer - metal level condenser | |
| CN104142594B (en) | Thin film transistor base plate and display device | |
| CN102364681B (en) | Pad, there is the SOI device of pad | |
| CN208738252U (en) | Dot structure and array substrate | |
| CN100446254C (en) | Semiconductor capacity | |
| CN104078464B (en) | There is storage component part and the correlation technique of multiple dielectric gate stackings | |
| CN206225359U (en) | A kind of integrated circuit sealing ring | |
| CN206271679U (en) | Individual static Carrier mechanism with protection wafer | |
| CN103426728A (en) | Capacitor structure and manufacturing method thereof | |
| CN108091641A (en) | MIM capacitor and preparation method thereof | |
| CN204067350U (en) | A kind of test structure of plasma-induced damage | |
| TW201435998A (en) | Metal-insulator-metal capacitor and method for forming the same | |
| US9299657B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
| CN105590923B (en) | Mim capacitor and forming method thereof | |
| CN108123037B (en) | MIM capacitor and manufacturing method thereof | |
| CN102610660A (en) | Cascaded MIM (multifunctional interface module) capacitor structure and semiconductor apparatus | |
| CN103311181B (en) | Improve the method for metal level-insulating medium layer-metal level mismatch parameter | |
| CN101097912A (en) | Capacitance structure for enhancing capacitance of flat capacitance | |
| CN205177824U (en) | Metal level - insulating layer - metal level condenser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141001 |