CN203850332U - Novel LED packaging structure - Google Patents
Novel LED packaging structure Download PDFInfo
- Publication number
- CN203850332U CN203850332U CN201320842431.3U CN201320842431U CN203850332U CN 203850332 U CN203850332 U CN 203850332U CN 201320842431 U CN201320842431 U CN 201320842431U CN 203850332 U CN203850332 U CN 203850332U
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- luminous element
- carrier layer
- wafer
- quantum dot
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- Expired - Lifetime
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- 238000004806 packaging method and process Methods 0.000 title abstract description 3
- 239000002096 quantum dot Substances 0.000 claims abstract description 52
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000000084 colloidal system Substances 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000012994 photoredox catalyst Substances 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 46
- 235000012431 wafers Nutrition 0.000 description 30
- 238000005538 encapsulation Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 239000003292 glue Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000295 emission spectrum Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
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- VYXSBFYARXAAKO-WTKGSRSZSA-N chembl402140 Chemical compound Cl.C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC VYXSBFYARXAAKO-WTKGSRSZSA-N 0.000 description 2
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- 239000007924 injection Substances 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
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- 206010019133 Hangover Diseases 0.000 description 1
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- 238000001215 fluorescent labelling Methods 0.000 description 1
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- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The utility model provides a novel LED packaging structure, and the structure at least comprises a support, a wafer, a bonding wire, and a sealing part; the support is used for supporting the wafer and the bonding wire; the wafer is used for emitting light which can effectively motivate fluorescent powder or a quantum dot; the bonding wire is used for connecting the wafer with the support; the sealing part comprises a high-energy illuminant and carrier layer and a low-energy illuminant and carrier layer; and the low-energy illuminant and carrier layer is located above the high-energy illuminant and carrier layer. The structure provided by the utility model effectively improves the lighting effect of an LED, and reduces the mutual energy absorption between illuminants.
Description
Technical field
The utility model relates to a kind of novel LED package formal technique, especially light-emitting diode layering packaging technology technology.
Background technology
The English full name of LED is Light Emitting Diode, Chinese is light-emitting diode (Taiwan is called light-emittingdiode), it is the semiconductor photoelectric device that electric energy is converted to luminous energy, comprise visible ray (Visible) and invisible light (Invisible), belong to the lighting source of new generation of optoelectronic semiconductor, major advantage: efficient low-power consumption, energy-conserving and environment-protective, response is fast, the life-span is long.
LED (light-emitting diode) encapsulation refers to the encapsulation of luminescent wafer, and comparing integrated antenna package has relatively big difference.The encapsulation of LED not only requirement can be protected wick, but also want can printing opacity.So the encapsulation of LED has special requirement to encapsulating material.
The wafer that the core of light-emitting diode is made up of P type semiconductor and N type semiconductor has a transition zone between P type semiconductor and N type semiconductor, is called P-N knot.In the PN junction of some semi-conducting material, the minority carrier of injection and majority carrier compound tense can discharge unnecessary energy with the form of light, thereby electric energy is directly converted to luminous energy.PN junction adds reverse voltage, and minority carrier is difficult to inject, therefore not luminous.This diode of injection electroluminescence principle making that utilizes, light-emitting diode, is generally called LED.LED produces raw material (wafer, support, glue, fluorescent material).The core that wafer: LED is luminous, one-way conduction characteristic.Red, orange, yellow, yellowish green wafer divides binary (GaAs), ternary (AlGaAs), quaternary material (AlGaInP).Blue, green wafer is that sapphire is substrate InGaN/Sapphire.Support: iron is as primary raw material, the supporting wafers that plated with nickel and silvery make outside and the raw material of bonding wire.Glue: the double-component silicon of good heat dissipation effect (silica gel A and silica gel B) is selected in the sealing of SMD LED, and low-end product also can be selected epoxy A/B glue, and proportioning is generally 1:1.Fluorescent material only just uses fluorescent material in the time of encapsulation white light LEDs, fluorescent material is that spherolitic chemical material is purified, is polished into application high-tech rare earth, and the fluorescent material that white light LEDs uses has the Japan day YAG of sub-patent and the TAG of Ou Silang (Siemens's individual proprietorship) patent.
The flow process of LED encapsulation is: 1, expand crystalline substance, the thickly dotted wafer of arranging is removed to any and be convenient to die bond.2, die bond, conduction/nonconducting glue on frame bottom point (whether conducting electricity depending on wafer is upper mo(u)ld bottom half PN junction or left right model PN junction) is then put into support the inside wafer.3, short roasting, while allowing glue curing bonding wire, wafer does not move.4, bonding wire, uses gold thread wafer and support conducting.5, before measurement, preliminary test can be bright.6, encapsulating, wraps up wafer and support with glue.7, long roasting, allow glue curing.8, rear survey, whether bright test energy is and whether electrical parameter is up to standard.9, color-division, color and voltage haply consistent product branch away.10, packaging.
Having at present LED encapsulation is substantially all that luminescent material is mixed and carrier (such as silica gel), material is mixed, there is no independent luminescent material is encapsulated according to their characteristic, it is luminous that the luminescent material of high band can absorb low band, the luminous efficiency of storeroom will reduce, can not be maximum give full play to properties of materials.
Quantum dot (English: Quantum Dot) can be described as again nanocrystalline, is a kind of nano particle being made up of II-VI family or III-V family element.It is the nanometer semiconductor structure that conduction band electron, valence band hole and exciton are held onto on three direction in spaces.The electron motion of quantum dot is all restricted at three dimensions, is therefore sometimes called as " artificial atom ", " superlattice ", " hyperonic atom " or " quantum dot atom ", is new ideas that put forward the nineties in 20th century.This constraint can ascribe electrostatic potential to (by outside electrode, doping, strain, impurity produces), the interface of two kinds of different semi-conducting materials (for example: certainly organize in quantum dot), semi-conductive surface (for example: semiconductor nanocrystal), or above three's combination.The separative quantized power spectrum of quantum dot tool.Corresponding wave function is spatially arranged in quantum dot, but extends in several lattice period.Quantum dot has electronics, hole or the hole-electron pair of a small amount of (1-100) integer, its with electric weight be the integral multiple of elementary charge.The particle diameter of quantum dot is generally between 1～10nm, and because electronics and hole are by quantum confinement, continuous band structure becomes the discrete energy levels structure with molecular characterization, can emitting fluorescence after being excited.Based on quantum effect, quantum dot is at solar cell, luminescent device, and the fields such as optical bio mark are with a wide range of applications.The scientist many diverse ways of utility model manufactures quantum dot, and expects that this nano material has great application potential in the nanoelectronics (nanoelectronics) of 21st century.
(l) emission spectrum of quantum dot can be controlled by the size that changes quantum dot.Can make its emission spectrum cover whole visible region by changing the size of quantum dot and its chemical composition.Taking CdTe quantum as example, in the time that its particle diameter grows into 4.0nm from 2.5nm, their emission wavelength can be from 510nm red shift to 660nm.
(2) quantum dot has good photostability.The most frequently used organic fluorescence materials " rhodamine 6G " of the fluorescence intensity ratio of quantum dot is high 20 times, and its stability is the more than 100 times of " rhodamine 6G " especially.Therefore, quantum dot can be observed for a long time to the object of mark, and this is also for interacting strong instrument is provided for a long time between biomolecule in research cell.
(3) quantum dot has wide excitation spectrum and narrow emission spectra.Use same excitation source just can realize the quantum dot of different-grain diameter is synchronously detected, thereby can be used for multi-color marking, greatly promoted fluorescence labeling in application.And the excitation wavelength scope of traditional organic fluorescent dye is narrower, different fluorescent dyes need multi-wavelength's exciting light to excite conventionally, and this has brought a lot of inconvenience to actual research work.In addition, quantum dot has narrow and symmetrical fluorescence emission peak, and without hangover, color quantum point is not easy to occur that spectrum is overlapping simultaneously while use.
(4) quantum dot has larger Stokes shift.Another optical property that quantum dot is different from organic dyestuff is exactly roomy Stokes shift, can avoid like this overlapping of emission spectrum and excitation spectrum, is conducive to the detection of fluorescence spectrum signal.
(5) fluorescence lifetime of quantum dot is long.The fluorescence lifetime of organic fluorescent dye is only generally several nanoseconds (these are suitable with the time of the autofluorescence decay of a lot of biological specimens).And sustainable tens of nanoseconds of the fluorescence lifetime of quantum dot (20ns-50ns), this makes when after optical excitation, and most autofluorescence has decayed, and quantum dot fluorescence still exists, and now can obtain the fluorescence signal without ambient interferences.
But the organic structure of quantum dot LED (QD-LED) is very sensitive to atmospheric environment, such as, humidity, temperature and electrochemical degradation have direct impact for the life-span of QD-LED.Therefore, these pluses and minuses that quantum dot LED has impel scientific research personnel to launch various research to it, such as, thereby the composition of research device architecture and regulate the stability etc. of device by changing electron transfer layer.
The superior fluorescent characteristics such as generally speaking, quantum dot has exciting light spectrum width and continuous distribution, and emission spectrum is narrow and symmetrical, and color is adjustable, and photochemical stability is high, and fluorescence lifetime is long are a kind of desirable fluorescence probes.
Utility model content
The technical problem that the utility model solves is, provide one to have exciting light spectrum width and continuous distribution, and emission spectrum is narrow and symmetrical, and color is adjustable, and photochemical stability is high, the LED encapsulation of the superior fluorescent characteristic such as fluorescence lifetime is long.
In order to address the above problem, the utility model provides a kind of novel LED encapsulating structure, at least comprises: support, wafer, bonding wire, seal member, and described support is used for supporting described wafer and bonding wire; Described wafer is for sending the light of effective excitated fluorescent powder or quantum dot; Described bonding wire is used for described wafer and support conducting; Described seal member comprises high-energy luminous element and carrier layer, low-yield luminous element and carrier layer; Described low-yield luminous element and carrier layer are positioned on described high-energy luminous element and carrier layer.
Further, described seal member is two layers, is from inside to outside followed successively by high-energy luminous element and carrier layer, low-yield luminous element and carrier layer.
Further, described seal member is three layers, is from inside to outside followed successively by one deck sealed colloid layer of high-energy luminous element and carrier layer, low-yield luminous element and carrier layer, carrier or obstruction air moisture.
Further, described seal member is four layers, is from inside to outside followed successively by one deck sealed colloid layer of carrier layer, high-energy luminous element and carrier layer, low-yield luminous element and carrier layer, carrier or obstruction air moisture.
Further, described high-energy luminous element is red fluorescence powder or quantum dot.
Further, described low-yield luminous element is green emitting phosphor or quantum dot.
Further, described support is that iron plated with nickel and silver are made; Described bonding wire is gold thread; Described wafer is blueness or ultraviolet wafer; Described carrier is silica gel, PC, PMMA, glass; Described sealed colloid is Parylene.
The utility model has the advantages that:
Effectively raise the light efficiency of LED, reduce the mutual energy absorption between luminous element.
1) quantum dot has good photostability.
2) quantum dot has wide excitation spectrum and narrow emission spectra.Effectively improve the color rendering index of LED; For application end can effectively improve liquid crystal display colour gamut, improve picture quality;
3) quantum effect of quantum dot is higher, and luminous efficiency is higher.
Brief description of the drawings
Fig. 1 is the LED encapsulating structure schematic diagram of the utility model embodiment mono-.
Fig. 2 is the LED encapsulating structure schematic diagram of the utility model embodiment bis-.
Fig. 3 is the LED encapsulating structure schematic diagram of the utility model embodiment tri-.
Embodiment
Hereinafter in connection with accompanying drawing, embodiment of the present utility model is elaborated.It should be noted that, in the situation that not conflicting, the combination in any mutually of the feature in embodiment and embodiment in the application.
Embodiment mono-:
The utility model provides a kind of novel LED encapsulating structure as shown in Figure 1, at least comprises: support 1, wafer 3, bonding wire 4, seal member 2.Support 1 is for supporting wafers 3 and bonding wire 4; Wafer 3 is for sending the light of effective excitated fluorescent powder or quantum dot; Bonding wire 4 is for wafer 3 and support 1 conducting; Seal member 2 is two layers, is from inside to outside followed successively by high-energy luminous element and carrier layer 21, low-yield luminous element and carrier layer 22.High-energy luminous element 5 is red fluorescence powder or quantum dot.Low-yield luminous element 6 is green emitting phosphor or quantum dot.Support 1 is made for iron plated with nickel and silver; Bonding wire 4 is gold thread; Wafer 3 is blueness or ultraviolet wafer, is not limited to for example, as long as effective excitated fluorescent powder or quanta point material are all right; Quantum dot is to have the CdSe/ZnS of nucleocapsid structure and CdSe/CdS/ZnS to receive brilliant quantum dot, or poly-triphenylamine (poly-TPD), 8-hydroxyquinoline aluminum (Alq3); Carrier is silica gel, PC, PMMA, glass.Sealed colloid is Parylene glue.
The flow process of encapsulation: high-energy luminescent material (red fluorescent material or quanta point material etc.) is mixed with carrier, be coated on bowl cup the inside; Low-yield luminescent material (green fluorescence powder or quanta point material etc.) is mixed with carrier, be coated on ground floor above; Fully mix with carrier, by chip die bond, on carrier and phosphor mixture encapsulating and support, the long roasting colloid that solidifies, is encapsulated as LED.
Embodiment bis-:
The utility model provides a kind of novel LED encapsulating structure as shown in Figure 2.
Different from embodiment mono-, seal member is three layers, is from inside to outside followed successively by one deck sealed colloid layer 23 of high-energy luminous element and carrier layer 21, low-yield luminous element and carrier layer 22, carrier or obstruction air moisture.Wafer 3 can be blueness or ultraviolet wafer, is not limited to for example, as long as effective excitated fluorescent powder or quanta point material are all right.
The flow process of encapsulation: high-energy luminescent material (red fluorescent material or quanta point material etc.) is mixed with carrier, be coated on bowl cup the inside; Low-yield luminescent material (green fluorescence powder or quanta point material etc.) is mixed with carrier, be coated on ground floor above; On the second layer, be coated with the isolated air of one deck carrier, prevent the pollutions such as the oxidized or sulfuration of luminescent material; The long roasting colloid that solidifies, by a kind of the material of fluorescent material or quantum dot or mix the material that is excited, clicks and enters above LED with the abundant mixture of carrier, and baking, makes the required LED's of preparation fluorescent material or quantum dot ratio as required.
The advantage of quantum dot LED is made in the present embodiment layering: effectively the temperature of wafer is completely cut off, improve the stability of quantum dot.
Embodiment tri-:
The utility model provides a kind of novel LED encapsulating structure as shown in Figure 3.
Different from embodiment mono-, described seal member is four layers, is from inside to outside followed successively by one deck sealed colloid layer 24 of carrier layer 21, high-energy luminous element and carrier layer 22, low-yield luminous element and carrier layer 23, carrier or obstruction air moisture.Wafer 3 can be blueness or ultraviolet wafer, is not limited to for example, as long as effective excitated fluorescent powder or quanta point material are all right.
The flow process of encapsulation: by a kind of the material of fluorescent material or quantum dot or mix the material that is excited, fully mix with carrier, by chip die bond, carrier is clicked and entered in LED support to the long roasting colloid that solidifies, by a kind of the material of fluorescent material or quantum dot or mix the material that is excited, click and enter above LED with the abundant mixture of carrier, baking adds carrier on this one deck, baking, makes the required LED's of preparation fluorescent material or quantum dot ratio as required.The LED of quantum dot will be made as.
The advantage of quantum dot LED is made in the present embodiment layering:
1. bottom carrier is effectively isolated the temperature of chip, improves the stability of fluorescent material or quanta point material.
2. top layer carrier effectively protects fluorescent material or quanta point material by material damage performance in air;
3. fluorescent material or quanta point material are separately given me a little glue, effectively prevent phase mutual interference.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (7)
1. a novel LED encapsulating structure, at least comprises: support, wafer, bonding wire, seal member, is characterized in that:
Described support is used for supporting described wafer and bonding wire;
Described wafer is for sending the light of effective excitated fluorescent powder or quantum dot;
Described bonding wire is used for described wafer and support conducting;
Described seal member comprises high-energy luminous element and carrier layer, low-yield luminous element and carrier layer; Institute
Stating low-yield luminous element and carrier layer is positioned on described high-energy luminous element and carrier layer.
2. a kind of novel LED encapsulating structure as claimed in claim 1, is characterized in that:
Described seal member is two layers, is from inside to outside followed successively by high-energy luminous element and carrier layer, low-yield luminous element and carrier layer.
3. a kind of novel LED encapsulating structure as claimed in claim 1, is characterized in that:
Described seal member is three layers, is from inside to outside followed successively by one deck sealed colloid layer of high-energy luminous element and carrier layer, low-yield luminous element and carrier layer, carrier or obstruction air moisture.
4. a kind of novel LED encapsulating structure as claimed in claim 1, is characterized in that:
Described seal member is four layers, is from inside to outside followed successively by one deck sealed colloid layer of carrier layer, high-energy luminous element and carrier layer, low-yield luminous element and carrier layer, carrier or obstruction air moisture.
5. a kind of novel LED encapsulating structure as described in any one in claim 1 to 4, is characterized in that: described high-energy luminous element is red fluorescence powder or quantum dot.
6. a kind of novel LED encapsulating structure as described in any one in claim 1 to 4, is characterized in that: described low-yield luminous element is green emitting phosphor or quantum dot.
7. a kind of novel LED encapsulating structure as described in any one in claim 1 to 4, is characterized in that:
Described support is that iron plated with nickel and silver are made; Described bonding wire is gold thread; Described wafer is blueness or ultraviolet wafer; Described carrier is silica gel, PC, PMMA, glass; Described sealed colloid is Parylene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320842431.3U CN203850332U (en) | 2013-12-19 | 2013-12-19 | Novel LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320842431.3U CN203850332U (en) | 2013-12-19 | 2013-12-19 | Novel LED packaging structure |
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| Publication Number | Publication Date |
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| CN203850332U true CN203850332U (en) | 2014-09-24 |
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| CN201320842431.3U Expired - Lifetime CN203850332U (en) | 2013-12-19 | 2013-12-19 | Novel LED packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018176525A1 (en) * | 2017-03-30 | 2018-10-04 | 深圳市华星光电技术有限公司 | Quantum dot led packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018176525A1 (en) * | 2017-03-30 | 2018-10-04 | 深圳市华星光电技术有限公司 | Quantum dot led packaging structure |
| US10134962B2 (en) | 2017-03-30 | 2018-11-20 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Quantum dot LED package structure |
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Granted publication date: 20140924 |
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| CX01 | Expiry of patent term |