CN203839419U - Display panel and display apparatus - Google Patents
Display panel and display apparatus Download PDFInfo
- Publication number
- CN203839419U CN203839419U CN201420092216.0U CN201420092216U CN203839419U CN 203839419 U CN203839419 U CN 203839419U CN 201420092216 U CN201420092216 U CN 201420092216U CN 203839419 U CN203839419 U CN 203839419U
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- display
- substrate
- display floater
- base
- oled device
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000012212 insulator Substances 0.000 claims description 40
- 239000011241 protective layer Substances 0.000 claims description 24
- 239000004568 cement Substances 0.000 claims description 15
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 abstract description 17
- 230000008020 evaporation Effects 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 22
- 238000004806 packaging method and process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical class [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Abstract
The utility model belongs to the display technical field and more specifically refers to a display panel and a display apparatus. The display panel comprises a first substrate divided into a display zone and a non-display zone encircling the periphery of the display zone. The first substrate is provided with a plurality of sub-pixel units corresponding with the upside of the display zone; a photo spacer (PS) is arranged between two adjacent sub-pixel units and comprises a based and a plurality of projection structures above the base. The display panel employs Haze phenomenon generated by inputting H2 into an indium tin oxide (ITO) film to manufacture the PS; the PS is used for supporting a package substrate employing glass package and an evaporation substrate, which can effectively protect OLED (Organic Light-Emitting Diode) apparatuses from being damaged and allow a better performance of the display panel; the PS only employs a sputtering apparatus and a plasma enhanced chemical vapor deposition apparatus, which has higher production power and reduces preparation cost.
Description
Technical field
The utility model belongs to Display Technique field, is specifically related to a kind of display floater and aobvious
Showing device.
Background technology
In recent years, OLED(Organic Light-Emitting Diode: Organic Light Emitting Diode) correlative study development is very rapid, has become most possible replacement LCD(LiquidCrystal Display: prospect technology liquid crystal display).Conventionally, OLED device at least comprises anode, negative electrode and the organic luminous layer between anode and negative electrode.Wherein, in OLED device, organic luminous layer and electrode are very easily subject to the erosion of water oxygen, thereby greatly reduce the life-span of OLED device, so OLED device package (Encapsulation) technology has become one of core of present stage research.
At present, the encapsulation of OLED device comprises the several different methods such as the coating of paste+UV of drying sheet (Getter) glue, face encapsulation (Face Seal), glass cement (Frit Seal) encapsulation, film (Thin Film) encapsulation.Wherein, glass cement encapsulation is by SiO
2, Al
2o
3in glass dust (Glass Frit), add other raw material furnishing binding agent (Paste), then by adhesive-coated on base plate for packaging, then carry out box with evaporation substrate, finally use laser (Laser) by the method for packing of glass cement sintering.
In glass cement encapsulation process, when base plate for packaging and evaporation substrate are carried out box operation, as shown in Figure 1, because glass cement 5 is coated on base plate for packaging 4, evaporation substrate 1 needs certain pressure to fit tightly with glass cement 5.Pressure during to box can cause base plate for packaging 4 and evaporation substrate 1 all to produce miniature deformation, and the thickness of glass cement 5 only has several microns, so this kind of deformation meeting causes base plate for packaging 4 to be pressed on OLED device 2, causes the damage of OLED device, affects the performance of display floater.
For the damage that prevents that base plate for packaging bending from causing OLED device, the solution adopting is at present as shown in Figure 2, to make certain thickness chock insulator matter 3(Photo Spacer above evaporation substrate 1, abbreviation PS).When base plate for packaging 4 is under pressure and while producing Bending Deformation, chock insulator matter 3 will play the effect of supporting base plate for packaging 4 and evaporation substrate 1, to protect OLED device 2 injury-free.At present, chock insulator matter 3 adopts photoetching method to form conventionally, and the photoetching production line (Photo Line) that adopts a series of lithographic equipments to form forms chock insulator matter.For example: first adopt glue spreader above evaporation substrate, to apply one deck photoresist, adopt again exposure machine to expose, adopt developing machine to develop, adopt curing machine to be cured photoresist to photoresist to photoresist, finally form the chock insulator matter of certain thickness and shape.
Adopt photoetching method to form chock insulator matter, due to the numerous equipment of needs, especially exposure machine is the bottleneck equipment in photoetching process always, cost is very high, in order to form the chock insulator matter of anti-deformation, and the photoetching production line of special configuration special use, not only complex process, and take and produce space of lines, greatly increased preparation cost, also increased accordingly the cost of display floater and display unit.
Utility model content
Technical problem to be solved in the utility model is for above shortcomings in prior art, and a kind of display floater and display unit are provided, and the chock insulator matter technique in this display floater is simpler, and preparation cost is lower.
The technical scheme that solution the utility model technical problem adopts is this display floater, comprise first substrate, described first substrate is divided into viewing area and is surrounded on the non-display area of described viewing area periphery, the top that described first substrate correspondence described viewing area is provided with a plurality of sub-pixel unit, between adjacent described sub-pixel unit, be provided with chock insulator matter, a plurality of bag shape structure bulge-structures that described chock insulator matter comprises base and is arranged at described base top.
Preferably, described sub-pixel unit is OLED device, and the thickness of described chock insulator matter is greater than the thickness of described OLED device.
Preferably, described base adopts tin indium oxide or indium zinc oxide.
Preferably, described base is round table-like, and described bag shape structure bulge-structure is hemispherical or semielliptical shape.
Preferably, the ratio of the thickness of described base and the thickness of described bulge-structure is 1:2-1:3, and the thickness range of described base is 1000-4000
Preferably, the top of described OLED device is provided with protective layer, and described protective layer also extends to the interstitial area between adjacent described OLED device, and described chock insulator matter is arranged on the top that described protective layer correspondence described interstitial area.
Preferably, described protective layer adopts silicon nitride material.
Preferably, the thickness range of described protective layer is 4000-10000
Preferably, described display floater also comprises second substrate, and between described first substrate and described second substrate, the periphery of corresponding described non-display area is provided with package frame, and described package frame adopts glass cement.
A display unit, comprises above-mentioned display floater.
The beneficial effects of the utility model are: this display floater utilizes ito thin film to pass into H
2the Haze phenomenon of rear generation is made chock insulator matter, for supporting base plate for packaging and the evaporation substrate that adopts glass cement encapsulation, can effectively protect OLED device injury-free, also makes the performance of display floater better; And this chock insulator matter only need adopt the equipment of these two separate units of sputtering equipment and plasma enhanced chemical vapor deposition equipment, compared to existing technology for the manufacture of the photoetching production line of photoetching chock insulator matter, greatly saved equipment cost and produced space of lines, production capacity is higher, has reduced preparation cost;
Accordingly, this display unit is owing to having adopted the better display floater of performance, so display effect is better; Meanwhile, owing to having adopted the display floater that cost is lower, therefore also reduced accordingly the cost of display unit.
Accompanying drawing explanation
Fig. 1 is that in prior art, the schematic diagram of deformation occurs display floater in to box process;
The structural representation of display floater in Fig. 2 prior art;
Fig. 3 is the structural representation of display floater in the utility model embodiment 1;
In figure: 1-evaporation substrate; 2-OLED device; 3-chock insulator matter; 31-base; 32-bulge-structure; 4-base plate for packaging; 5-glass cement; 6-protective layer.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, below in conjunction with the drawings and specific embodiments, the utility model display floater and display unit are described in further detail.
A kind of display floater, comprise first substrate, described first substrate is divided into viewing area and is surrounded on the non-display area of described viewing area periphery, the top that described first substrate correspondence described viewing area is provided with a plurality of sub-pixel unit, between adjacent described sub-pixel unit, be provided with chock insulator matter, a plurality of bulge-structures that described chock insulator matter comprises base and is arranged at described base top.
A display unit, comprises above-mentioned display floater.
Embodiment 1:
A kind of display floater, comprise first substrate, first substrate is divided into viewing area and is surrounded on the non-display area of viewing area periphery, the top that first substrate correspondence viewing area is provided with a plurality of sub-pixel unit, between adjacent sub-pixel unit, be provided with chock insulator matter, a plurality of bulge-structures that chock insulator matter comprises base and is arranged at base top.Wherein, sub-pixel unit is OLED device, and the thickness of chock insulator matter is greater than the thickness of OLED device.
Display floater also comprises second substrate, and between first substrate and second substrate, the periphery of corresponding non-display area is provided with package frame, and package frame adopts glass cement (Frit Seal), and chock insulator matter is supported between first substrate and second substrate.
As shown in Figure 3, in the structure of this display floater, first substrate is evaporation substrate 1, second substrate is base plate for packaging 4, there is OLED device 2 evaporation substrate 1 top, between OLED device 2, be provided with chock insulator matter 3, base plate for packaging 4 links together by glass cement 5 and the evaporation substrate 1 of the 2 surrounding coatings of OLED device, forms an all-sealed structure.
Wherein, in chock insulator matter 3, base 31 adopts tin indium oxides (Indium Tin Oxide is called for short ITO) or indium zinc oxide (Indium Zinc Oxide is called for short IZO), and bulge-structure 32 be take base 31 for basic, in the top face of base 31, grows out.Preferably, base 31 is round table-like, and bulge-structure 32 is hemispherical or semielliptical shape.The ratio of the thickness of the thickness of base 31 and bulge-structure 32 is 1:2-1:3, and the thickness range of base 31 is 1000-4000
As shown in Figure 3, the top of OLED device 2 is provided with protective layer 6, and protective layer 6 also extends to the interstitial area between adjacent OLED device 2, and chock insulator matter 3 is arranged on the top that protective layer 6 correspondences interstitial area.Wherein, the general silicon nitride material (SiNx) that adopts of protective layer 6.The effect of protective layer 6 is mainly: the one, and protective layer 6 can form one deck barrier layer above OLED device 2, prevents from depositing when ito thin film forms chock insulator matter base 31 OLED device 2 is caused to damage; The 2nd, protective layer 6 can intercept water and oxygen enters in OLED device 2, further improves the life-span of OLED device 2.Preferably the thickness range of protective layer 6 is 4000-10000
Accordingly, the present embodiment also provides a kind of preparation method of display floater, is included in first substrate correspondence and the step that the top of viewing area forms sub-pixel unit and form chock insulator matter between sub-pixel unit, and the step that forms chock insulator matter comprises:
Form base 31;
Take base 31 as basis, in the top face of base 31, grow a plurality of bulge-structures 32.
Preferably, before forming base 31, the top that is also included in sub-pixel unit (being OLED device) forms the step of protective layer 6, and protective layer 6 also extends to the interstitial area of adjacent OLED device, and base is formed on the top that protective layer correspondence interstitial area.Preferably, protective layer 6 adopts silicon nitride material, in depositing device, by depositional mode, forms.Protective layer 6 can form one deck barrier layer above OLED device 2, prevents from depositing when ito thin film forms chock insulator matter base 31 OLED device 2 is caused to damage; Can intercept again water and oxygen and enter in OLED device 2, further improve the life-span of OLED device 2.
Concrete, the step that forms base 31 is: adopt tin indium oxide (Indium Tin Oxide is called for short ITO) or indium zinc oxide (Indium Zinc Oxide is called for short IZO), preferably base 31 is ito thin film.In the chamber of the first film-forming apparatus, by sputter mode, form base 31, base 31 is round table-like.Certainly, the shape of base 31 is not defined as round table-like, and according to structure needs, the shape of base 31 can be arranged to the multiple three-dimensional shape that cross section is rectangle, square etc.
Wherein, the first film-forming apparatus is sputtering equipment (Sputter); Ito thin film time need to add mask plate (Mask) in deposition, to guarantee that its sputtering sedimentation is in the position of the interstitial area of appointment, such as: be formed on corresponding the lighttight regions such as the grid line of interstitial area, data wire.
Generally, ito thin film is a kind of In of Sn doping
2o
3film, the Sn atom in ito thin film is generally with SnO(divalence) or Sn
2o(tetravalence) form exists.There is scholar to utilize secondary ion mass spectroscopy analysis (Secondary Ion Mass Spectrometry, is called for short SIMS, also cries secondary ion mass spectrometry (SIMS) analysis) to analyze ito thin film surface, show that its surperficial anion O-, cation In+ are for its main component.Wherein, secondary ion mass spectroscopy analysis or secondary ion mass spectrometry (SIMS) analysis are the analytical technologies of a kind of surface-element or compound component, for example: with the Ar+ Ions Bombardment surface of solids of 1kV, by introducing mass spectrometer from surface sputtering secondary ion out, after mass separation, draw element or the compound component of the surface of solids.
Next, take base 31 as basis, the step that grows bulge-structure in the top face of base 31 is:
The first substrate that forms base 31 is placed in the chamber of the second film-forming apparatus, and wherein, the second film-forming apparatus is plasma enhanced chemical vapor deposition equipment (Plasma Enhanced Chemical Vapor Deposition is called for short PECVD);
In the chamber of the second film-forming apparatus, pass into H
2, and by H
2ionization, utilizes H+ ion by the In+ ion exchange in the ito thin film of formation base 31 out, makes the ito thin film superficial growth of base 31 go out a plurality of bulge-structures.This process is also referred to as Haze phenomenon, in common semiconductor preparing process, Haze phenomenon be a kind of bad phenomenon (refer to because of the fuzzy rete of Surface Creation cause bad), and in the present embodiment, utilize Haze phenomenon, can (be generally a few minutes) is in a short period of time just 1:2-1:3 in the thickness of bulge-structure 32(base 31 of the thickness that top face quantity of formation is numerous, thickness is greater than base 31 and the ratio of the thickness of bulge-structure 32 of base 31), thereby complete the preparation of chock insulator matter, improve production capacity, and saved target.
That is to say, the Haze phenomenon in the present embodiment refer to, is placed in the chamber of the second film-forming apparatus completing the ito thin film film forming that is used to form base 31, in the chamber of the second film-forming apparatus, passes into H
2, by regulating H
2intake concentration (for example: 500-2000sccm), (for example: 10s-200s) pass into the time, and control pressure in the chamber of the second film-forming apparatus (such as: 500-3000Pa) and temperature 150-400 ℃) (such as the technological parameter such as, make the top face of ito thin film grow the phenomenon of bulge-structure, and can regulate the size of bulge-structure, shape and thickness.The reason that Haze phenomenon occurs is: H
2pass into after the chamber of the second film-forming apparatus, after ionization, form H+ ion, because the In+ ion activity in H+ ion ratio ito thin film is stronger, therefore In+ ion can be cemented out from ito thin film, In+ ion forms bulge-structure 32 gradually at ito thin film surface deposition, and bulge-structure 32 is hemispherical or semielliptical shape.Generally speaking, H
2intake larger, concentration is larger, the shape of bulge-structure 32 is larger, quantity is also more.Here it should be understood that because the response area of ito thin film end face is large, so bulge-structure is mainly grown in the top face of ito thin film, and the bulge-structure growing out is larger, quantity is large; And the response area of the side of ito thin film is little, although the bulge-structure of also can growing, the bulge-structure growing out is less, and quantity is little.
In the present embodiment, display floater adopts 5 pairs of base plate for packaging 4 of glass cement and evaporation substrate 1 to encapsulate, 3 of chock insulator matters wherein play base plate for packaging 4 and 1 effect of evaporation substrate supported, for gap (Gap) value between base plate for packaging 4 and evaporation substrate 1, need not be strict with, so the thickness of chock insulator matter 3 is not needed to very strict requirement yet, in theory as long as the thickness of chock insulator matter 3 is greater than the thickness of OLED device 2.According to the difference of OLED device 2 thickness, the deposit thickness scope that forms the ito thin film of base 31 is 1000-4000
the gross thickness of ito thin film and bulge-structure 32 is greater than the thickness of OLED device 2 can (OLED thickness of detector be generally 3000
left and right).
In the display floater of the present embodiment, utilize ito thin film to pass into H
2the Haze phenomenon of rear generation is made chock insulator matter, for supporting base plate for packaging and the evaporation substrate that adopts glass cement encapsulation, can effectively protect OLED device injury-free, also makes the performance of display floater better; And this chock insulator matter only need adopt the equipment of these two separate units of sputtering equipment and plasma enhanced chemical vapor deposition equipment, compared to existing technology for the manufacture of the photoetching production line of photoetching chock insulator matter, greatly saved equipment cost and produced space of lines, production capacity is higher, has reduced preparation cost.
Embodiment 2:
The present embodiment provides a kind of display unit, and this display unit comprises the display floater in embodiment 1.
This display unit can be: any product or parts with Presentation Function such as Electronic Paper, oled panel, mobile phone, panel computer, television set, display, notebook computer, DPF, navigator.
This display unit is owing to having adopted the better display floater of performance, so display effect is better; Meanwhile, owing to having adopted the display floater that cost is lower, therefore also reduced accordingly the cost of display unit.
Be understandable that, above execution mode is only used to principle of the present utility model is described and the illustrative embodiments that adopts, yet the utility model is not limited to this.For those skilled in the art, in the situation that not departing from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement are also considered as protection range of the present utility model.
Claims (10)
1. a display floater, comprise first substrate, described first substrate is divided into viewing area and is surrounded on the non-display area of described viewing area periphery, the top that described first substrate correspondence described viewing area is provided with a plurality of sub-pixel unit, between adjacent described sub-pixel unit, be provided with chock insulator matter, it is characterized in that a plurality of bulge-structures that described chock insulator matter comprises base and is arranged at described base top.
2. display floater according to claim 1, is characterized in that, described sub-pixel unit is OLED device, and the thickness of described chock insulator matter is greater than the thickness of described OLED device.
3. display floater according to claim 1, is characterized in that, described base adopts tin indium oxide or indium zinc oxide.
4. display floater according to claim 1, is characterized in that, described base is round table-like, and described bulge-structure is hemispherical or semielliptical shape.
5. display floater according to claim 1, is characterized in that, the ratio of the thickness of described base and the thickness of described bulge-structure is 1:2-1:3, and the thickness range of described base is 1000-4000
6. display floater according to claim 2; it is characterized in that; the top of described OLED device is provided with protective layer, and described protective layer also extends to the interstitial area between adjacent described OLED device, and described chock insulator matter is arranged on the top that described protective layer correspondence described interstitial area.
7. display floater according to claim 6, is characterized in that, described protective layer adopts silicon nitride material.
8. display floater according to claim 6, is characterized in that, the thickness range of described protective layer is 4000-10000
9. according to the display floater described in claim 1-8 any one, it is characterized in that, described display floater also comprises second substrate, and between described first substrate and described second substrate, the periphery of corresponding described non-display area is provided with package frame, and described package frame adopts glass cement.
10. a display unit, is characterized in that, described display unit comprises display floater described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420092216.0U CN203839419U (en) | 2014-02-28 | 2014-02-28 | Display panel and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420092216.0U CN203839419U (en) | 2014-02-28 | 2014-02-28 | Display panel and display apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203839419U true CN203839419U (en) | 2014-09-17 |
Family
ID=51517223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420092216.0U Expired - Lifetime CN203839419U (en) | 2014-02-28 | 2014-02-28 | Display panel and display apparatus |
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| Country | Link |
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| CN (1) | CN203839419U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872089A (en) * | 2014-02-28 | 2014-06-18 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
| CN106298839A (en) * | 2015-06-03 | 2017-01-04 | 上海和辉光电有限公司 | Display device and display floater thereof |
| CN112259700A (en) * | 2020-10-23 | 2021-01-22 | 上海天马有机发光显示技术有限公司 | Display panel, display device and forming method of display panel |
-
2014
- 2014-02-28 CN CN201420092216.0U patent/CN203839419U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872089A (en) * | 2014-02-28 | 2014-06-18 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
| WO2015127798A1 (en) * | 2014-02-28 | 2015-09-03 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display device |
| CN103872089B (en) * | 2014-02-28 | 2016-11-02 | 京东方科技集团股份有限公司 | A kind of display floater and preparation method thereof, display device |
| US9698369B2 (en) | 2014-02-28 | 2017-07-04 | Boe Technology Group Co., Ltd. | Display panel and manufacturing method thereof and display device |
| CN106298839A (en) * | 2015-06-03 | 2017-01-04 | 上海和辉光电有限公司 | Display device and display floater thereof |
| CN112259700A (en) * | 2020-10-23 | 2021-01-22 | 上海天马有机发光显示技术有限公司 | Display panel, display device and forming method of display panel |
| CN112259700B (en) * | 2020-10-23 | 2023-01-13 | 武汉天马微电子有限公司 | Display panel, display device and forming method of display panel |
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