CN203826364U - Laminated body and semiconductor device - Google Patents

Laminated body and semiconductor device Download PDF

Info

Publication number
CN203826364U
CN203826364U CN201320085513.8U CN201320085513U CN203826364U CN 203826364 U CN203826364 U CN 203826364U CN 201320085513 U CN201320085513 U CN 201320085513U CN 203826364 U CN203826364 U CN 203826364U
Authority
CN
China
Prior art keywords
film
resin
duplexer
splicing ear
interarea
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201320085513.8U
Other languages
Chinese (zh)
Inventor
本田一尊
永井朗
佐藤慎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2012/075412 external-priority patent/WO2013125086A1/en
Priority claimed from PCT/JP2012/075414 external-priority patent/WO2013125087A1/en
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Application granted granted Critical
Publication of CN203826364U publication Critical patent/CN203826364U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

The utility model provides a laminated body and a semiconductor device. The laminated body is formed by the laminating of a resin film containing soldering flux on the main surface of a semiconductor wafer. The main surface of the semiconductor wafer is provided with a connecting terminal which is coated with an oxidation film. The laminated body is equipped with a resin composite layer formed by the resin film; and the semiconductor wafer which employs the soldering flux to restore and remove at least a part of the oxidation film, thereby enabling at least a part of the connecting terminal to be exposed out of the resin composite layer.

Description

Duplexer and semiconductor device
Technical field
The utility model relates to duplexer and semiconductor device.
Background technology
In recent years, for being connected of semiconductor chip and substrate, on semiconductor chip or substrate, form the conductivity projection that is known as projection, semiconductor chip and the direct-connected flip-chip connected mode of substrate (FC connected mode) are popularized.
In flip-chip connected mode, conductivity projection is conventionally by scolding tin, tin, gold, silver, copper, nickel with comprise multiple electric conducting material in these metals etc. and form, if but there is the surface oxidation of such conductivity projection and generate oxide-film, the situation that connectivity reduces.
Therefore,, in patent documentation 1～4, for the object of removing the oxide-film of conductivity protrusion surface, proposed to make the method (for example,, with reference to patent documentation 2～5) that contains solder flux in semi-conducting material.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2001-223227 communique
Patent documentation 2: TOHKEMY 2002-283098 communique
Patent documentation 3: TOHKEMY 2005-272547 communique
Patent documentation 4: TOHKEMY 2006-169407 communique
Utility model content
The problem that utility model will solve
For the semi-conducting material of recording in patent documentation 1～4, think: the heating when semi-conducting material carries out thermo-compressed by semiconductor chip and substrate, makes solder flux and oxide-film react and oxide-film is removed.
The purpose of this utility model is, provides a kind of and compares with using the situation of semi-conducting material in the past, the semiconductor device of reflux-resisting welded property and connection reliability excellence and for making the duplexer of this semiconductor device.
The method of dealing with problems
A mode of the present utility model provides a kind of duplexer, the duplexer that it obtains containing the resin film of solder flux for lamination on the interarea of semiconductor wafer, the splicing ear on this interarea of described semiconductor wafer with oxidized film coating, described duplexer possesses: the resin combination layer being formed by above-mentioned resin film; And utilize above-mentioned solder flux that at least a portion reduction of above-mentioned oxide-film is removed, thereby the above-mentioned semiconductor wafer that at least a portion of above-mentioned splicing ear is exposed in above-mentioned resin combination layer.
In the duplexer of the manner, the heating during by multilayer resin film, the oxide-film on the splicing ear of semiconductor wafer is removed, and this splicing ear exposes in resin combination layer.Thus, by using the duplexer of having removed in advance oxide-film, can make the semiconductor device of reflux-resisting welded property and connection reliability excellence.
In addition, a mode of the present utility model provides a kind of duplexer, the duplexer that its resin paste that contains solder flux on the interarea of semiconductor wafer for being coated with obtains, the splicing ear on this interarea of described semiconductor wafer with oxidized film coating, described duplexer possesses: the resin combination layer being formed by above-mentioned resin paste; And utilize above-mentioned solder flux that at least a portion reduction of above-mentioned oxide-film is removed, thereby the above-mentioned semiconductor wafer that at least a portion of above-mentioned splicing ear is exposed in above-mentioned resin combination layer.
In the duplexer of the manner, the oxide-film on the splicing ear of semiconductor wafer is removed, and this splicing ear exposes in resin combination layer.In addition, in the manner, the removing such as being undertaken by the heating when the desolventizing the resin paste from coating etc. of oxide-film.In addition, the duplexer of the manner can be also in order to remove oxide-film, to implement the not duplexer of the heating made of state of cure of resin combination layer.Thus, by using the duplexer of having removed in advance oxide-film, can make the semiconductor device of reflux-resisting welded property and connection reliability excellence.
In addition, a mode of the present utility model provides a kind of duplexer, the duplexer that it obtains containing the resin film of solder flux for lamination on the interarea of substrate, the splicing ear on this interarea of described substrate with oxidized film or organic film coating, described duplexer possesses: the resin combination layer being formed by above-mentioned resin film; And at least a portion of above-mentioned oxide-film and above-mentioned organic film is removed, thereby the aforesaid substrate that at least a portion of above-mentioned splicing ear is exposed in above-mentioned resin combination layer.
In the duplexer of the manner, the heating during by multilayer resin film, the oxide-film on the splicing ear of substrate (or organic film) is removed, and this splicing ear exposes in resin combination layer.Thus, by using the duplexer of having removed in advance oxide-film (or organic film), can make the semiconductor device of reflux-resisting welded property and connection reliability excellence.In addition, above-mentioned organic film is the organic film arranging for preventing splicing ear oxidation, for example, is to process by organic film the anti-oxidant organic film of using that (OSP(Organic Solderability Preservative: have organizational security weldering film) forms.
In addition, a mode of the present utility model provides a kind of duplexer, the duplexer that its resin paste that contains solder flux on the interarea of substrate for being coated with obtains, the splicing ear on this interarea of described substrate with oxidized film or organic film coating, described duplexer possesses: the resin combination layer being formed by above-mentioned resin paste; And at least a portion of above-mentioned oxide-film or above-mentioned organic film is removed, thereby the aforesaid base plate that at least a portion of above-mentioned splicing ear is exposed in above-mentioned resin combination layer.
In the duplexer of the manner, the oxide-film on the splicing ear of substrate (or organic film) is removed, and this splicing ear exposes in resin combination layer.In addition, in the manner, the removing such as being undertaken by the heating when the desolventizing the resin paste from coating etc. of oxide-film (or organic film).In addition, the duplexer of the manner can be also in order to remove oxide-film (or organic film), to implement the not duplexer of the heating made of state of cure of resin combination layer.Thus, by using the duplexer of having removed in advance oxide-film (or organic film), can make the semiconductor device of reflux-resisting welded property and connection reliability excellence.
In addition, a mode of the present utility model provides a kind of semiconductor device, it obtains in the following way: by the above-mentioned duplexer that possesses semiconductor wafer is carried out to singualtion, obtain, on the interarea of splicing ear, be formed with the semiconductor chip of resin combination layer and be configured across the relative mode of above-mentioned resin combination layer with the above-mentioned interarea of aforesaid substrate according to the above-mentioned interarea of above-mentioned semiconductor chip with the substrate on interarea with splicing ear having, and utilize heating pressurization that the above-mentioned splicing ear of above-mentioned semiconductor chip is electrically connected to the above-mentioned splicing ear of aforesaid substrate.
The semiconductor device of the manner is owing to being the semiconductor device that uses the above-mentioned duplexer of having removed in advance the oxide-film of splicing ear to make, and therefore reflux-resisting welded property and connection reliability are excellent.
The semiconductor device of the manner can be according to place above-mentioned semiconductor chip after 48 hours and the bonding force T at 260 ℃ between aforesaid substrate under 80 ℃ of temperature, relative humidity 60% condition 2with respect to the initial stage bonding force T at 260 ℃ between above-mentioned semiconductor chip and aforesaid substrate 1be more than 70% mode by above-mentioned semiconductor chip and the bonding semiconductor device of aforesaid substrate.Meet such initial stage bonding force T 1with the bonding force T after fuchsin(e)test 2the semiconductor device of relation, its reflux-resisting welded property is more excellent.
In addition, a mode of the present utility model provides a kind of semiconductor device, obtain as follows: by above-mentioned, possess the duplexer of substrate and be configured across the relative mode of above-mentioned resin combination layer with the above-mentioned interarea of above-mentioned semiconductor chip according to the above-mentioned interarea of aforesaid substrate with the semiconductor chip on interarea with splicing ear, and utilize heating pressurization that the above-mentioned splicing ear of aforesaid substrate is electrically connected to the above-mentioned splicing ear of above-mentioned semiconductor chip.
The semiconductor device of the manner is owing to being the semiconductor device that the duplexer of the above-mentioned oxide-film of removing in advance splicing ear of use (or organic film) is made, and therefore reflux-resisting welded property and connection reliability are excellent.
The semiconductor device of the manner can be according to place above-mentioned semiconductor chip after 48 hours and the bonding force T at 260 ℃ between aforesaid substrate under 80 ℃ of temperature, relative humidity 60% condition 2with respect to the initial stage bonding force T at 260 ℃ between above-mentioned semiconductor chip and aforesaid substrate 1be more than 70% mode by above-mentioned semiconductor chip and the bonding semiconductor device of aforesaid substrate.Meet such initial stage bonding force T 1with the bonding force T after fuchsin(e)test 2the semiconductor device of relation, its reflux-resisting welded property is more excellent.
The effect of utility model
According to the utility model, can provide the semiconductor device of reflux-resisting welded property and connection reliability excellence and for making the duplexer of this semiconductor device.
Accompanying drawing explanation
Fig. 1 means the constructed profile of the semiconductor wafer before duplexer forms.
Fig. 2 means the constructed profile of the duplexer of the first execution mode of the present utility model.
Fig. 3 means the constructed profile of the semiconductor device of the first execution mode of the present utility model.
Fig. 4 means the constructed profile of the substrate before duplexer forms.
Fig. 5 means the constructed profile of the duplexer of the second execution mode of the present utility model.
Fig. 6 means the constructed profile of the semiconductor device of the second execution mode of the present utility model.
Symbol description
10: semiconductor chip, 11: semiconductor wafer, 12: copper tip, 13: solder bump, 14: oxide-film, 15: resin combination layer, 16: curing resin layer, 17: substrate, 18: splicing ear, 19: splicing ear, 21: substrate, 22: copper wiring, 23: solder bump, 24: oxide-film, 25: resin combination layer, 26: curing resin layer, 27: semiconductor chip, 28: splicing ear, 29: splicing ear, 110: duplexer, 120: semiconductor device, 210: duplexer, 220: semiconductor device.
Embodiment
Below, optionally with reference to accompanying drawing, on one side preferred implementation of the present utility model is elaborated on one side.In addition, in accompanying drawing, to identical or considerable part, give same-sign, and omit repeat specification.In addition, the dimensional ratios of accompanying drawing is not limited to illustrated ratio.
The duplexer of the first execution mode of the present utility model is on the interarea of semiconductor wafer, to form the duplexer obtaining containing the resin combination layer of solder flux, has the splicing ear of oxidized film coating on this interarea of described semiconductor wafer.In the duplexer of the first execution mode, utilize solder flux that at least a portion reduction of the oxide-film on splicing ear is removed, thereby at least a portion of splicing ear is exposed in resin combination.
Fig. 2 means the constructed profile of the duplexer of the first execution mode.The duplexer 110 of Fig. 2 possesses: the resin combination layer 15 that is formed with the semiconductor wafer 11 of splicing ear 19 by copper tip 12 and solder bump 13 and arranges to surpass the thickness of the height of splicing ear 19 on the interarea of semiconductor wafer 11 on interarea.
Fig. 1 means the constructed profile of the semiconductor wafer before duplexer forms.On the interarea of semiconductor wafer 11, by copper tip 12 and solder bump 13, be formed with splicing ear 19, and oxidized film 14 coatings of this splicing ear 19.
The duplexer 110 of Fig. 2 can obtain by the resin film containing solder flux by lamination on the interarea of the semiconductor wafer 11 shown in Fig. 1.
The lamination of resin film carries out conventionally at 30～120 ℃.At such temperature, conventionally the reaction that utilizes solder flux that oxide-film reduction is removed may not fully be carried out, if but use the adhesive composite containing specific solder flux described later, even under such laminating temperature, also the oxide-film on splicing ear 19 14 reduction can be removed, reach the degree that at least a portion of splicing ear 19 is exposed in resin combination layer 15.
In addition, the duplexer 110 of Fig. 2 also can the resin paste containing solder flux obtain by coating on the interarea of the semiconductor wafer 11 shown in Fig. 1.
When the coating by resin paste forms resin combination layer 15, the reduction of oxide-film 14 is removed such as being undertaken by the heating during except desolventizing the resin paste from coating etc.In addition, duplexer 110 can be also for oxide-film 14 reduction are removed, and after forming resin combination layer 15, implements the not duplexer of the heating made of state of cure of resin combination layer 15.
In addition, if common solder flux, when being heated to oxide-film 14 reduction and removing, likely the solidifying of generation tree oil/fat composition layer 15, bonding force reduction etc.On the other hand, while having used the adhesive composite containing specific solder flux described later in resin paste, the heating of same degree when with multilayer resin film, can carry out the reduction of oxide-film 14 and remove, therefore can in the situation that the reduction that the solidifying of generation tree oil/fat composition layer 15, bonding force reduction etc. do not realize oxide-film 14 remove.
Thus, by using the duplexer 110 of having removed in advance oxide-film, can make the semiconductor device of reflux-resisting welded property and connection reliability excellence.
Semiconductor device for example can be made as follows: duplexer 110 is carried out to singualtion, makes the semiconductor chip of resin composition layer, and by this semiconductor-chip-mounting on substrate.
; the semiconductor device of the first execution mode obtains as follows: by duplexer being carried out to singualtion, obtain, possess the semiconductor chip of resin combination layer and be configured across the relative mode of resin combination layer with the interarea of substrate according to the interarea of semiconductor chip with the substrate on interarea with splicing ear being provided with on the interarea of splicing ear, and utilize heating pressurization that the splicing ear of semiconductor chip is electrically connected to the splicing ear of substrate.
Fig. 3 means the constructed profile of the semiconductor device of the first execution mode.The semiconductor device 120 of Fig. 3 possesses: on interarea, by copper tip 12 and solder bump 13, be formed with the semiconductor chip 10 of splicing ear 19 and on interarea, have the substrate 17 of the splicing ear 18 consisting of copper wiring.In addition, in semiconductor device 120, by the splicing ear 19 of semiconductor chip 10 and the splicing ear 18 of substrate 17, directly contact to have obtained and conduct.When in addition, the splicing ear 19 of semiconductor chip 10 and the splicing ear of substrate 17 18 preferably pressurize by heating, metal bond has been carried out in the melting of solder bump 13.In addition, semiconductor chip 10 has carried out bonding with the curing resin layer 16 that substrate 17 consists of the solidfied material by resin combination layer 15 mutually.
In semiconductor device 120, semiconductor chip 10 obtains by duplexer 110 is carried out to singualtion, and the conducting therefore being caused by oxide-film hinders and fully suppressed, and has excellent connection reliability.
In semiconductor device 120, semiconductor chip 10 has been undertaken bonding with substrate 17 by curing resin layer 16.Semiconductor device 120 is preferably according to the bonding force T at 260 ℃ that places 17 of semiconductor chip 10 after 48 hours and substrates under 80 ℃ of temperature, relative humidity 60% condition 2(be bonding force T after fuchsin(e)test below 2) become initial stage bonding force T 1more than 70% mode by the bonding semiconductor device of semiconductor chip 10 and substrate 17.
Thus, by according to bonding force T after fuchsin(e)test 2become initial stage bonding force T 1more than 70% mode semiconductor chip 10 and substrate 17 is bonding, the reflux-resisting welded property of semiconductor device 120 is more excellent.And, so bonding can be by the adhesive composite of specific solder flux of having used described later be realized as resin combination layer.
Then, the second execution mode is described.The duplexer of the second execution mode of the present utility model is the duplexer that formation obtains containing the resin combination layer of solder flux on interarea at substrate, has the splicing ear of oxidized film or organic film coating on this interarea of described substrate.In the duplexer of the second execution mode, utilize solder flux that at least a portion of the oxide-film on splicing ear or organic film is removed, thereby at least a portion of splicing ear is exposed in resin combination.Here, organic film is the organic film arranging for preventing splicing ear oxidation, for example, is to process by organic film the anti-oxidant organic film of using that (OSP(Organic Solderability Preservative: have organizational security weldering film) forms.In the situation that the metal that copper geometric ratio is easier to form oxide film thereon is for distribution etc., sometimes carry out OSP processing to prevent the oxidation of distribution.In the second execution mode, in the situation that by such organic film coating splicing ear, its part is removed by solder flux, a part for splicing ear is exposed in resin combination.In addition, removing of oxide-film is that reduction is removed, and removing by forming salt etc. with solder flux of organic film undertaken.
Fig. 5 means the constructed profile of the duplexer of the second execution mode.The duplexer 210 of Fig. 5 possesses: the resin combination layer 25 that is formed with the substrate 21 of splicing ear 29 by copper wiring 22 and solder bump 23 and arranges to surpass the thickness of the height of splicing ear 29 on the interarea of substrate 21 on interarea.
Fig. 4 means the constructed profile of the substrate before duplexer forms.On the interarea of substrate 21, by copper wiring 22 and solder bump 23, be formed with splicing ear 29, and oxidized film 24 coatings of this splicing ear 29.
The duplexer 210 of Fig. 5 can obtain by the resin film containing solder flux by lamination on the interarea of the substrate 21 shown in Fig. 4.
The lamination of resin film carries out as mentioned above conventionally at 30～120 ℃.At such temperature, conventionally the reaction that utilizes solder flux that oxide-film reduction is removed to (or organic film is removed) may not fully be carried out, if but use the adhesive composite containing specific solder flux described later, even under such laminating temperature, also the oxide-film on splicing ear 29 24 reduction can be removed to (or removing organic film), reach the degree that at least a portion of splicing ear 29 is exposed in resin combination layer 25.
In addition, the duplexer 210 of Fig. 5 also can the resin paste containing solder flux obtain by coating on the interarea of the substrate 21 shown in Fig. 4.
When the coating by resin paste forms resin combination layer 25, the reduction of oxide-film 24 is removed such as being undertaken by the heating during except desolventizing the resin paste from coating etc.In addition, duplexer 210 can be also for oxide-film 24 reduction are removed, and after resin combination layer 25 forms, implements the not duplexer of the heating made of state of cure of resin combination layer 25.
In addition, if common solder flux, when being heated to oxide-film 24 reduction and removing (or organic film is removed), likely the solidifying of generation tree oil/fat composition layer 25, bonding force reduction etc.On the other hand, while having used the adhesive composite containing specific solder flux described later in resin paste, the heating of same degree when with multilayer resin film, (or organic film remove) removed in the reduction that can carry out oxide-film 24, therefore can be in the situation that (or organic film remove) removed in the reduction that the solidifying of generation tree oil/fat composition layer 25, bonding force reduction etc. do not realize oxide-film 24.
Thus, by using the duplexer 210 of having removed in advance oxide-film, organic film, can make the semiconductor device of reflux-resisting welded property and connection reliability excellence.
Semiconductor device for example can be made by suitable lift-launch semiconductor chip on duplexer 210.
; the semiconductor device of the second execution mode obtains as follows: the duplexer of the second execution mode is configured across the relative mode of resin combination layer with the interarea of semiconductor chip according to the interarea of substrate with the semiconductor chip on interarea with splicing ear, and utilizes heating pressurization that the splicing ear of substrate is electrically connected to the splicing ear of semiconductor chip.
Fig. 6 means the constructed profile of the semiconductor device of the second execution mode.The semiconductor device 220 of Fig. 6 possesses: on interarea, by copper wiring 22 and solder bump 23, be formed with the substrate 21 of splicing ear 29 and on interarea, have the semiconductor chip 27 of the splicing ear 28 consisting of copper tip.In addition, in semiconductor device 220, by the splicing ear 29 of substrate 21 and the splicing ear 28 of semiconductor chip 27, directly contact to have obtained and conduct.When in addition, the splicing ear 29 of substrate 21 and the splicing ear of semiconductor chip 27 28 preferably pressurize by heating, metal bond has been carried out in the melting of solder bump 23.In addition, substrate 21 has carried out bonding with the curing resin layer 16 that semiconductor chip 27 consists of the solidfied material by resin combination layer 25 mutually.
In semiconductor device 220, due to duplexer 210 reduction in advance removed at least a portion of the oxide-film on the splicing ear 29 of substrate 21, the conducting therefore being caused by oxide-film hinders and is fully suppressed, and has excellent connection reliability.
In semiconductor device 220, substrate 21 has been undertaken bonding with semiconductor chip 27 by curing resin layer 26.Semiconductor device 220 is preferably according to the bonding force T at 260 ℃ that places 27 of substrate 21 after 48 hours and semiconductor chips under 80 ℃ of temperature, relative humidity 60% condition 2(be bonding force T after fuchsin(e)test below 2) become initial stage bonding force T 1more than 70% mode by the bonding semiconductor device of substrate 21 and semiconductor chip 27.
Thus, by according to bonding force T after fuchsin(e)test 2become initial stage bonding force T 1more than 70% mode substrate 21 and semiconductor chip 27 is bonding, the reflux-resisting welded property of semiconductor device 220 is more excellent.And, so bonding can be by the adhesive composite of specific solder flux of having used described later be realized as resin combination layer.
In addition, the duplexer 210 of the duplexer 110 of the first execution mode and semiconductor device 120 and the second execution mode and semiconductor device 220 can further possess other not shown inscapes.
In addition, in the respective embodiments described above, the thickness of semiconductor wafer and semiconductor chip for example can be made as 30～750 μ m.In addition, semiconductor chip can have the essentially rectangular shape that the length on each limit is 1～40mm.
In the respective embodiments described above, semiconductor wafer and semiconductor chip are to record as the form with copper tip, but the terminal that semiconductor wafer and semiconductor chip have is not limited to copper tip.For example, the terminal that semiconductor wafer and semiconductor chip also can have silver-colored terminal, golden terminal or consist of scolding tin.
In addition, in the respective embodiments described above, substrate can be organic substrate, and when substrate is organic substrate, in its face, the thermal coefficient of expansion of direction can be 2～20(/K).
In the respective embodiments described above, substrate is to record as the substrate with copper wiring, but the distribution that substrate has is not limited to copper wiring.For example, the distribution that substrate also can have silver-colored distribution, gold wiring or consist of scolding tin.In addition, the wiring closet of substrate is apart from being for example made as 5～200 μ m, and the distribution gap of substrate for example can be made as 5～100 μ m.
Below, the preferred mode that shows the adhesive composite that is used to form the resin combination layer in the first and second execution modes of the present utility model.
By utilizing the adhesive composite of following optimal way to form resin combination layer, the reduction that can effectively obtain the oxide-film under laminating temperature is removed.In addition, if utilize the adhesive composite of following optimal way, can easily realize bonding force T after fuchsin(e)test 2become initial stage bonding force T 170% bonding.
The adhesive composite > of < first method
The adhesive composite of first method contains epoxy resin and (below, is optionally called " (a) composition ".), curing agent (following, be optionally called " (b) composition ".) and have the represented group of following formula (1) compound (following, be optionally called " (c1) composition ".）。In addition, in formula (1), R 1expression is to electronics group.
Change 1
The adhesive composite of first method is used in combination above-mentioned specific solder flux ((c1) composition) and epoxy resin, therefore by the adhesive composite by first method, form resin combination layer, can easily realize the semiconductor device of above-mentioned duplexer and reflux-resisting welded property and connection reliability excellence.
In order to improve reflux-resisting welded property, the bonding force that need to suppress after the moisture absorption under high temperature reduces.In the past, use carboxylic acid as solder flux, but during solder flux before using, the inventor etc. think, because following reason has produced bonding force reduction.
Conventionally, epoxy resin reacts with curing agent and is cured and reacts, and now as the carboxylic acid of solder flux, is introduced into this curing reaction.That is, the epoxy radicals of epoxy resin and the carboxyl of solder flux react sometimes, thereby form ester bond.Easily there is the hydrolysis that moisture absorption etc. causes etc. in this ester bond, the decomposition of this ester bond is considered to the reason that the bonding force after moisture absorption reduces.
On the other hand, the adhesive composite of first method contains (1) the represented group that has formula, possesses the compound to the carboxyl of electronics group nearby.Therefore, use the adhesive composite of first method, can fully obtain flux activity by carboxyl, even and if in the situation that having formed above-mentioned ester bond, by giving electronics group, the electron density of ester bond portion also raises, and can suppress the decomposition of ester bond.Also can think in addition, owing to there is substituting group (to electronics group) near carboxyl, therefore due to steric hindrance, carboxyl is suppressed with reacting of epoxy resin, and ester bond is difficult to generate.
Based on these reasons, if use the adhesive composite of first method, be difficult for producing the composition that moisture absorption etc. causes and change, can maintain excellent bonding force.In addition, above-mentioned effect also can be said to, and the curing reaction of epoxy resin and curing agent is difficult to be hindered by solder flux, by this effect, also can expect that the brought connection reliability that fully carries out of the curing reaction of epoxy resin and curing agent improves such effect.
The adhesive composite of first method can contain as required weight average molecular weight be more than 10000 macromolecule component (following, be optionally called " (d) composition ".）。In addition, the adhesive composite of first method can contain as required filler and (below, optionally be called " (e) composition ".）。
The adhesive composite > of < second method
The adhesive composite of second method contains epoxy resin and (below, is optionally called " (a) composition ".), curing agent (following, be optionally called " (b) composition ".) and have following formula (1-1) or (1-2) compound of represented group (following, be optionally called " (c2) composition ".）。In addition, formula (1-1) and (1-2) in, R 1to electronics group, there is a plurality of R in expression 1mutually can be the same or different.
Change 2
The adhesive composite of second method is used in combination above-mentioned specific solder flux ((c2) composition) and epoxy resin, therefore by the adhesive composite by second method, form resin combination layer, can easily realize the semiconductor device of above-mentioned duplexer and reflux-resisting welded property and connection reliability excellence.
In order to improve reflux-resisting welded property, the bonding force that need to suppress after the moisture absorption under high temperature reduces.In the past, use carboxylic acid as solder flux, but during solder flux before using, the inventor etc. think, because following reason has produced bonding force reduction.
Conventionally, epoxy resin reacts with curing agent and is cured and reacts, and now as the carboxylic acid of solder flux, is introduced into this curing reaction.That is, the epoxy radicals of epoxy resin and the carboxyl of solder flux react sometimes, thereby form ester bond.Easily there is the hydrolysis that moisture absorption etc. causes etc. in this ester bond, the decomposition of this ester bond is considered to the reason that the bonding force after moisture absorption reduces.
On the other hand, the adhesive composite of second method contain there is formula (1-1) or (1-2) represented group, possess 2 nearby to the compound of the carboxyl of electronics group.Therefore can think, use the adhesive composite of second method, can fully obtain flux activity by carboxyl, even and if in the situation that having formed above-mentioned ester bond, to electronics group, the electron density of ester bond portion also raises, and can suppress the decomposition of ester bond by 2.Also can think in addition, due near 2 substituting groups of existence carboxyl (giving electronics group), therefore due to steric hindrance, carboxyl is suppressed with reacting of epoxy resin, is difficult to generate ester bond.
Based on these reasons, if use the adhesive composite of second method, be difficult for producing the composition that moisture absorption etc. causes and change, can maintain excellent bonding force.In addition, above-mentioned effect also can be said to, and the curing reaction of epoxy resin and curing agent is difficult to be hindered by solder flux, by this effect, also can expect that the brought connection reliability that fully carries out of the curing reaction of epoxy resin and curing agent improves such effect.
The adhesive composite of second method can contain as required weight average molecular weight be more than 10000 macromolecule component (following, be optionally called " (d) composition ".）。In addition, the adhesive composite of second method can contain as required filler and (below, optionally be called " (e) composition ".）。
Below, to forming each composition of the adhesive composite of aforesaid way, describe.In addition, in the following description, sometimes by (c1) composition and (c2) composition be referred to as " (c) composition ".
(a) composition: epoxy resin
As epoxy resin, so long as there is the epoxy resin of 2 above epoxy radicals in molecule, just can use without particular limitation.As (a) composition, for example, can use bisphenol A type epoxy resin, bisphenol f type epoxy resin, naphthalene type epoxy resin, phenol novolak type epoxy resin, cresols phenolic resin varnish type epoxy resin, phenol aralkyl-type epoxy resin, biphenyl type epoxy resin, triphenyl methane type epoxy resin, dicyclopentadiene type epoxy resin and various polyfunctional epoxy resin.They can use separately or use as mixture of more than two kinds.
(a) composition, when at high temperature connecting, inhibition decomposes and the viewpoint of generation volatile ingredient, temperature during connection is in the situation of 250 ℃, preferably using the thermogravimetric amount minimizing dose rate in the time of 250 ℃ is the epoxy resin below 5%, in the situation of 300 ℃, preferably using the thermogravimetric amount minimizing dose rate in the time of 300 ℃ is the epoxy resin below 5%.
(a) content of composition in the total amount benchmark of adhesive composite, for example, can be made as 5～75 quality %, is preferably 10～50 quality %, more preferably 15～35 quality %.
(b) composition: curing agent
As (b) composition, for example, can enumerate phenolic resins is that curing agent, acid anhydrides are that curing agent, amine are that curing agent, imidazoles are that curing agent and phosphine are curing agent.(b), when composition comprises phenolic hydroxyl group, acid anhydrides, amine or imidazoles, flux activity further improves, and can further improve connection reliability, insulating reliability.Below, each curing agent is described.
(i) phenolic resins is curing agent
As phenolic resins, it is curing agent, so long as there is the material of 2 above phenolic hydroxyl groups in molecule, be just not particularly limited, for example, can use phenol novolac resin, cresols novolac resin, phenol aralkyl resin, cresol naphthol formaldehyde condensation products, the multifunctional phenolic resins of triphenyl methane type and various multifunctional phenolic resins.They can use separately or use as mixture of more than two kinds.
Phenolic resins is that curing agent is with respect to the equivalent proportion (phenolic hydroxyl group/epoxy radicals, mol ratio) of above-mentioned (a) composition, viewpoint from good curability, cementability and storage stability, preferably 0.3～1.5, more preferably 0.4～1.0, further preferably 0.5～1.0.Equivalent proportion is 0.3 when above, has curability and improves, and the tendency that bonding force improves, is 1.5 when following, and having unreacted phenolic hydroxyl group can be excessive not remaining, and water absorption rate is suppressed to lower, the tendency of insulating reliability raising.
(ii) acid anhydrides is curing agent
As acid anhydrides, be curing agent, for example, can use hexahydrotoluene tetracarboxylic dianhydride, trimellitic anhydride, PMA acid anhydride, benzophenone tetracarboxylic dianhydride and ethylene glycol bis dehydration trimellitate.They can use separately or use as mixture of more than two kinds.
Acid anhydrides be curing agent with respect to the equivalent proportion (anhydride group/epoxy radicals, mol ratio) of above-mentioned (a) composition, from the viewpoint of good curability, cementability and storage stability, preferably 0.3～1.5, more preferably 0.4～1.0, further preferably 0.5～1.0.Equivalent proportion is 0.3 when above, has curability and improves, and the tendency that bonding force improves, is 1.5 when following, and having unreacted acid anhydrides can be excessive not remaining, and water absorption rate is suppressed to lower, the tendency of insulating reliability raising.
(iii) amine is curing agent
As amine, be curing agent, for example, can use dicyandiamide.
Amine be curing agent with respect to the equivalent proportion (amine/epoxy radicals, mol ratio) of above-mentioned (a) composition, from the viewpoint of good curability, cementability and storage stability, preferably 0.3～1.5, more preferably 0.4～1.0, further preferably 0.5～1.0.Equivalent proportion is 0.3 when above, has curability and improves, and the tendency that bonding force improves, is 1.5 when following, and having unreacted amine can be excessive not remaining, the tendency of insulating reliability raising.
(iv) imidazoles is curing agent
As imidazoles, be curing agent, for example, can enumerate 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1 benzyl 2 methyl imidazole, 1-benzyl-2-phenylimidazole, 1-cyano ethyl-2-undecyl imidazole, 1-cyano group-2-phenylimidazole, 1-cyano ethyl-2-undecyl imidazole trimellitate, 1-cyano ethyl-2-phenylimidazole trimellitate, 2,4-diaminourea-6-［ 2 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine, 2,4-diaminourea-6-［ 2 '-undecyl imidazole base-(1 ') ］-ethyl-s-triazine, 2,4-diaminourea-6-［ 2 '-ethyl-4 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine, 2,4-diaminourea-6-［ 2 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine isocyanuric acid addition product, 2-phenylimidazole isocyanuric acid addition product, 2-phenyl-4,5-dihydroxy methylimidazole, 2-phenyl-4-methyl-5-hydroxymethyl imidazoles, addition product with epoxy resin and imidazoles.Wherein, from excellent curability, the viewpoint of storage stability and connection reliability is set out, preferred 1-cyano ethyl-2-undecyl imidazole, 1-cyano group-2-phenylimidazole, 1-cyano ethyl-2-undecyl imidazole trimellitate, 1-cyano ethyl-2-phenylimidazole trimellitate, 2, 4-diaminourea-6-［ 2 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine, 2, 4-diaminourea-6-［ 2 '-ethyl-4 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine, 2, 4-diaminourea-6-［ 2 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine isocyanuric acid addition product, 2-phenylimidazole isocyanuric acid addition product, 2-phenyl-4, 5-dihydroxy methylimidazole and 2-phenyl-4-methyl-5-hydroxymethyl imidazoles.They may be used singly or in combination of two or more kinds and use.In addition, also they can be made to the potentiality curing agent that has carried out microencapsulation.
Imidazoles is that the content of curing agent is with respect to (a) composition 100 mass parts, preferably 0.1～20 mass parts, more preferably 0.1～10 mass parts.Imidazoles is that the content of curing agent is 0.1 mass parts when above, has the tendency that curability improves, and is 20 mass parts when following, has and can not solidify forming metal bond front attachment agent composition, is difficult for the tendency of generation bad connection.
(v) phosphine is curing agent
As phosphine, be curing agent, for example, can enumerate triphenylphosphine, tetraphenylphosphonium tetraphenyl borate, tetraphenylphosphonium four (4-aminomethyl phenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate.
Phosphine is that the content of curing agent is with respect to (a) composition 100 mass parts, preferably 0.1～10 mass parts, more preferably 0.1～5 mass parts.Phosphine is that the content of curing agent is 0.1 mass parts when above, has the tendency that curability improves, and is 10 mass parts when following, has and can not solidify forming metal bond front attachment agent composition, is difficult for the tendency of generation bad connection.
Phenolic resins is that curing agent, acid anhydrides are that curing agent and amine are that curing agent can be used separately respectively a kind or use as mixture of more than two kinds.Imidazoles is that curing agent and phosphine are that curing agent can be distinguished use separately, can be also that curing agent, acid anhydrides are that curing agent or amine are that curing agent shares with phenolic resins.
From storage stability, further improve, be difficult for there is the caused decomposition of moisture absorption, deteriorated viewpoint is set out, (b) to be preferably from phenolic resins be that curing agent, amine are that curing agent, imidazoles are that curing agent and phosphine are the curing agent of selecting the group that forms of curing agent to composition.In addition, from the viewpoint of the easiness of curing rate adjustment with utilize the voltinism of tachy steroling can realize with productivity ratio to rise to the viewpoint that short time of object is connected, (b) composition is more preferably that curing agent, amine are that curing agent and imidazoles are the curing agent of selecting the group that forms of curing agent from phenolic resins.
It is that curing agent, acid anhydrides are that curing agent or amine are in the situation of curing agent as (b) composition that adhesive composite comprises phenolic resins, can demonstrate the flux activity of removing oxide-film, more improves connection reliability.
(c1) composition: the compound with the represented group of formula (1)
(c1) composition is that the compound with the represented group of formula (1) (is optionally called " flux compounds (c1) " below.）。(c1) composition is the compound with flux activity, in the adhesive composite of first method, as solder flux, works.As (c1) composition, can use separately a kind of flux compounds (c1), flux compounds that also two or more kinds may be used (c1).
Change 3
In formula (1), R 1expression is to electronics group.
As giving electronics group, for example, can enumerate alkyl, hydroxyl, amino, alkoxyl and alkyl amino.As giving electronics group, the group that preferably for example, is difficult to reaction with other compositions (, (a) epoxy resin of composition), particularly, preferred alkyl, hydroxyl or alkoxyl, more preferably alkyl.
Give electronics group to electronics grow time, there is the tendency that easily obtains the effect that above-mentioned inhibition ester bond decomposes.In addition, while giving the steric hindrance of electronics group large, easily obtain the effect that above-mentioned inhibition carboxyl reacts with epoxy resin.Have well to electronics and steric hindrance to the preferred balance of electronics group.
As alkyl, the alkyl of preferred carbon number 1～10, the more preferably alkyl of carbon number 1～5.The carbon number of alkyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkyl, effect of the present utility model can be brought into play more significantly.
In addition, alkyl can be that straight chain shape can be also chain, but preferred straight chain shape wherein.When alkyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkyl is preferably below the carbon number of main chain of flux compounds (c1).For example, flux compounds (c1) is for the represented compound of following formula (2), while being the alkyl of straight chain shape to electronics group, and the carbon number of this alkyl is preferably below the carbon number (n+1) of main chain of flux compounds (c1).
As alkoxyl, the alkoxyl of preferred carbon number 1～10, the more preferably alkoxyl of carbon number 1～5.The carbon number of alkoxyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkoxyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkoxyl, effect of the present utility model can be brought into play more significantly.
In addition, the moieties of alkoxyl can be that straight chain shape can be also a chain, wherein preferred straight chain shape.When alkoxyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkoxyl is preferably below the carbon number of main chain of flux compounds (c1).For example, flux compounds (c1) is for the represented compound of following formula (2), while being the alkoxyl of straight chain shape to electronics group, and the carbon number of this alkoxyl is preferably below the carbon number (n+1) of main chain of flux compounds (c1).
As alkyl amino, can enumerate alkyl monosubstituted amino, dialkyl amido.As alkyl monosubstituted amino, the alkyl monosubstituted amino of preferred carbon number 1～10, the more preferably alkyl monosubstituted amino of carbon number 1～5.The moieties of alkyl monosubstituted amino can be that straight chain shape can be also a chain, is preferably straight chain shape.
As dialkyl amido, the dialkyl amido of preferred carbon number 2～20, the more preferably dialkyl amido of carbon number 2～10.The moieties of dialkyl amido can be that straight chain shape can be also a chain, is preferably straight chain shape.
Flux compounds (c1) is preferably the compound (dicarboxylic acids) with 2 carboxyls.The compound with 2 carboxyls is compared with the compound (monocarboxylic acid) with 1 carboxyl, even if the high temperature when connecting is not volatile yet, can further suppress the generation in space.In addition, when use has the compound of 2 carboxyls, compare with having used the situation of the compound with 3 above carboxyls, the viscosity rise of the adhesive composite in the time of can further suppressing keeping, during attended operation etc., can further improve the connection reliability of semiconductor device.
As flux compounds (c1), can preferably use the represented compound of following formula (2).If use the represented compound of following formula (2), can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 4
In formula (2), R 1expression is to electronics group, R 2represent hydrogen atom or to electronics group, n represents more than 0 or 1 integer, has a plurality of R 2mutually can be the same or different.
N in formula (2) is preferably more than 1.N is 1 when above, compares with the situation that n is 0, even the high temperature when connecting, flux compounds (c1) is not volatile yet, can further suppress the generation in space.In addition, the n in formula (2) is preferably below 15,, below 11, can be more preferably also below 6 or below 4.N is 15 when following, can obtain more excellent connection reliability.
In addition, as flux compounds (c1), the represented compound of following formula (3) more preferably.If use the represented compound of following formula (3), can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 5
In formula (3), R 1expression is to electronics group, R 2represent hydrogen atom or to electronics group, m represents more than 0 or 1 integer.
M in formula (3) is preferably below 10, more preferably below 5, more preferably below 3.M is 10 when following, can obtain more excellent connection reliability.
In formula (3), R 2can be that hydrogen atom can be also to electronics group.R 2during for hydrogen atom, there is the tendency of fusing point step-down, sometimes can more improve the connection reliability of semiconductor device.In addition, R 1with R 2for different while giving electronics group, with R 1with R 2for the identical situation of giving electronics group, compare, there is the tendency of fusing point step-down, sometimes can more improve the connection reliability of semiconductor device.
In the represented compound of formula (3), as R 2for the compound of hydrogen atom, can enumerate dimethyl succinic acid, 2-methylglutaric acid, 2-methyl adipic acid, 2-methyl pimelic acid, 2-methyl suberic acid etc.If use these compounds, can further improve the connection reliability of semiconductor device.In addition, in these compounds, particularly preferably dimethyl succinic acid and 2-methylglutaric acid.
In addition, in formula (3), R 1with R 2for identical, while giving electronics group, become symmetrical structure, there is the tendency that fusing point uprises, but in this case, also can fully obtain effect of the present utility model.At fusing point, be particularly below 150 ℃, the in the situation that of fully low, even R 1with R 2for identical group, also can obtain and R 1with R 2connection reliability for not isoplastic situation same degree.
As flux compounds (c1), for example, can use 2 replacements at the dicarboxylic acids of selecting from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, decanedioic acid, heneicosanedioic acid and dodecanedioic acid to have the compound to electronics group.
(c2) composition: there is formula (1-1) or (1-2) compound of represented group
(c2) composition for have formula (1-1) or (1-2) compound of represented group (following, be optionally called " flux compounds (c2) ".）。(c2) composition is the compound with flux activity, in the adhesive composite of second method, as solder flux, works.As (c2) composition, can use separately a kind of flux compounds (c2), flux compounds that also two or more kinds may be used (c2).
Change 6
Formula (1-1) and (1-2) in, R 1to electronics group, there is a plurality of R in expression 1mutually can be the same or different.
As giving electronics group, for example, can enumerate alkyl, hydroxyl, amino, alkoxyl and alkyl amino.As giving electronics group, the group that preferably for example, is difficult to reaction with other compositions (, (a) epoxy resin of composition), particularly, preferred alkyl, hydroxyl or alkoxyl, more preferably alkyl.
Give electronics group to electronics grow time, there is the tendency that easily obtains the effect that above-mentioned inhibition ester bond decomposes.In addition, while giving the steric hindrance of electronics group large, easily obtain the effect that above-mentioned inhibition carboxyl reacts with epoxy resin.Have well to electronics and steric hindrance to the preferred balance of electronics group.
As alkyl, the alkyl of preferred carbon number 1～10, the more preferably alkyl of carbon number 1～5.The carbon number of alkyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkyl, effect of the present utility model can be brought into play more significantly.
In addition, alkyl can be that straight chain shape can be also a chain, wherein preferred straight chain shape.When alkyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkyl is preferably below the carbon number of main chain of flux compounds (c2).For example, flux compounds (c2) for following formula (2-1) or (2-2) represented compound, while being the alkyl of straight chain shape to electronics group, the carbon number of this alkyl is preferably the carbon number (n of the main chain of flux compounds (c2) 1+ 1 or n 2+ 2) below.
As alkoxyl, the alkoxyl of preferred carbon number 1～10, the more preferably alkoxyl of carbon number 1～5.The carbon number of alkoxyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkoxyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkoxyl, effect of the present utility model can be brought into play more significantly.
In addition, the moieties of alkoxyl can be that straight chain shape can be also a chain, wherein preferred straight chain shape.When alkoxyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkoxyl is preferably below the carbon number of main chain of flux compounds (c2).For example, flux compounds (c2) for following formula (2-1) or (2-2) represented compound, while being the alkoxyl of straight chain shape to electronics group, the carbon number of this alkoxyl is preferably the carbon number (n of the main chain of flux compounds (c2) 1+ 1 or n 2+ 2) below.
As alkyl amino, can enumerate alkyl monosubstituted amino, dialkyl amido.As alkyl monosubstituted amino, the alkyl monosubstituted amino of preferred carbon number 1～10, the more preferably alkyl monosubstituted amino of carbon number 1～5.The moieties of alkyl monosubstituted amino can be that straight chain shape can be also a chain, is preferably straight chain shape.
As dialkyl amido, the dialkyl amido of preferred carbon number 2～20, the more preferably dialkyl amido of carbon number 2～10.The moieties of dialkyl amido can be that straight chain shape can be also a chain, is preferably straight chain shape.
Flux compounds (c2) is preferably the compound (dicarboxylic acids) with 2 carboxyls.The compound with 2 carboxyls is compared with the compound (monocarboxylic acid) with 1 carboxyl, even if the high temperature when connecting is not volatile yet, can further suppress the generation in space.In addition, when use has the compound of 2 carboxyls, compare with having used the situation of the compound with 3 above carboxyls, the viscosity rise of the adhesive composite in the time of can further suppressing keeping, during attended operation etc., can further improve the connection reliability of semiconductor device.
As flux compounds (c2), can preferably use following formula (2-1) or (2-2) represented compound.If use following formula (2-1) or (2-2) represented compound, can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 7
In formula (2-1), R 1expression is to electronics group, R 2represent hydrogen atom or to electronics group, n 1represent more than 0 or 1 integer.In addition, there is a plurality of R 1mutually can be the same or different, R 2there is when a plurality of R 2mutually can be the same or different.
In formula (2-2), R 1expression is to electronics group, R 2represent hydrogen atom or to electronics group, n 2represent more than 1 integer.In addition, there is a plurality of R 1mutually can be the same or different, R 2there is when a plurality of R 2mutually can be the same or different.
N in formula (2-1) 1be preferably more than 1.N 1be 1 when above, with n 1be that 0 situation is compared, even the high temperature when connecting, flux compounds (c2) is not volatile yet, can further suppress the generation in space.In addition, the n in formula (2-1) 1being preferably below 15,, below 11,, below 9, can be more preferably more preferably also below 7 or below 5.N 1be 15 when following, can obtain more excellent connection reliability.
N in formula (2-2) 2being preferably below 14,, below 10,, below 8, can be more preferably more preferably also below 6 or below 4.N 2be 10 when following, can obtain more excellent connection reliability.
In addition, as flux compounds (c2), more preferably following formula (3-1) or (3-2) represented compound.If use following formula (3-1) or (3-2) represented compound, can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 8
In formula (3-1), R 1expression is to electronics group, R 2represent hydrogen atom or to electronics group, m 1represent more than 0 or 1 integer.There is a plurality of R 1and R 2can be the same or different each other.
In formula (3-2), R 1expression is to electronics group, R 2represent hydrogen atom or to electronics group, m 2represent more than 0 or 1 integer.There is a plurality of R 1and R 2can be the same or different each other.
M in formula (3-1) 1be preferably below 10, more preferably below 8, more preferably below 6.M 1be 10 when following, can obtain more excellent connection reliability.
M in formula (3-1) 2be preferably below 9, more preferably below 7, more preferably below 5.M 2be 9 when following, can obtain more excellent connection reliability.
When flux compounds (c2) is unsymmetric structure, there is the tendency of fusing point step-down, sometimes can more improve the connection reliability of semiconductor device.When flux compounds (c2) is symmetrical structure, there is the tendency that fusing point uprises, but in this case, also can fully obtain effect of the present utility model.Particularly fusing point is in 150 ℃ of following, fully low situations, even if flux compounds (c2) is symmetrical structure, also can obtain the connection reliability with the situation same degree of unsymmetric structure.Here, symmetrical structure refers to, for example R in formula (3-1) 1and R 2for situation of identical group etc.
In formula (3-1) and formula (3-2), R 2be preferably hydrogen atom.Such compound is the flux compounds (c2) of unsymmetric structure, if use such compound, can further improve the connection reliability of semiconductor device.
As flux compounds (c2), for example, can use 2 replacements at the dicarboxylic acids of selecting from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, decanedioic acid, heneicosanedioic acid and dodecanedioic acid to have 2 to the compound of electronics group.
In addition, as flux compounds (c2), for example, also can use 3 replacements at the dicarboxylic acids of selecting from glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, decanedioic acid, heneicosanedioic acid and dodecanedioic acid to have 2 to the compound of electronics group.
(c) fusing point of composition is preferably below 150 ℃, more preferably below 140 ℃, further preferably below 130 ℃.(c) composition so easily fully showed flux activity before the curing reaction of initial ring epoxy resins and curing agent.Therefore,, if use the adhesive composite that contains such (c) composition, can make more reliably above-mentioned duplexer, and can realize the more excellent semiconductor device of connection reliability.In addition, (c) fusing point of composition preferably more than 25 ℃, more preferably more than 50 ℃.In addition, (c) composition is preferably solid under room temperature (25 ℃).
(c) fusing point of composition can be measured with general fusing point test device.Measure the sample of fusing point, require to be ground into micropowder and use trace, to reduce the temperature deviation in sample.As the container of sample, most capillaries that use one end sealing, also have by determinator and sandwich in 2 microscope slide glass and as the container of container.In addition, while making temperature sharply increase, produce temperature gradient and produce evaluated error between sample and thermometer, the mode that is heated to be 1 ℃ of following climbing per minute during therefore preferably according to measurement fusing point is measured.
Due to furnishing micropowder as previously mentioned, therefore, because of the sample of surperficial diffuse reflection before causing melting opaque.Conventionally the outward appearance of sample is started to the temperature of transparence as the lower-limit point of fusing point, using the temperature melting completely as upper change point.There is variform in determinator, but the most classic device can be used the capillary of sample the device heating in hot bath are housed in Double-pipe type thermometer.For object capillaceous is installed in Double-pipe type thermometer, can use liquid that viscosity is high as the liquid of hot bath, the most concentrated sulfuric acids or silicone oil of using, according to occurring that in accumulating of thermometer front end the mode of sample installs near place.In addition, as fusing point test device, also can use and utilize the heat block of metal to heat, while measure the device that the transmitance of light is adjusted heating and automatically determined fusing point.
In addition, in this specification, fusing point is that 150 ℃ of upper change points that refer to below fusing point are below 150 ℃, and fusing point is that 25 ℃ of lower-limit point that refer to above fusing point are more than 25 ℃.
(c) content of composition, in the total amount benchmark of adhesive composite, is preferably 0.5～10 quality %, more preferably 0.5～5 quality %.
(d) composition: weight average molecular weight is more than 10000 macromolecule component
It is more than 10000 macromolecule components ((d) composition) that adhesive composite can contain weight average molecular weight as required.Thermal endurance and the film-shaped of the adhesive composite that contains (d) composition become second nature more excellent.
As (d) composition, for example, from can obtain excellent thermal endurance, film-shaped becomes second nature and the viewpoint of connection reliability, preferably phenoxy resin, polyimide resin, polyamide, polycarbodiimide resin, cyanate ester resin, acrylic resin, mylar, polyvinyl resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, polyurethane resin and acrylic rubber.Wherein, from thermal endurance and the film-shaped more excellent viewpoint that becomes second nature, more preferably phenoxy resin, polyimide resin, acrylic rubber, acrylic resin, cyanate ester resin and polycarbodiimide resin, further preferably phenoxy resin, polyimide resin, acrylic rubber and acrylic resin.These (d) compositions also can be used separately or as mixture of more than two kinds, copolymer and use.But (d) in composition, do not contain the epoxy resin as (a) composition.
(d) weight average molecular weight of composition is more than 10000, is preferably more than 20000, more preferably more than 30000.If use such (d) composition, thermal endurance and the film-shaped that can further improve adhesive composite become second nature.
In addition, (d) weight average molecular weight of composition is preferably below 1000000, more preferably below 500000.If use such (d) composition, can obtain the such effect of high-fire resistance.
In addition, above-mentioned weight average molecular weight represents to use GPC(gel permeation chromatography, Gel Permeation Chromatography) weight average molecular weight that measure, polystyrene conversion.An example that below shows the condition determination of GPC method.
Device: HCL-8320GPC, UV-8320(trade name, Dong Cao company system) or HPLC-8020(trade name, Dong Cao company system)
Chromatographic column: TSKgel superMultiporeHZ-M * 2 or 2 GMHXL+1 prop up G-2000XL
Detector: RI or UV detector
Chromatogram column temperature: 25～40 ℃
Elutriant: the solvent of selecting to dissolve macromolecule component.For example, THF(oxolane), DMF(N, dinethylformamide), DMA(N, N-dimethylacetylamide), NMP(N-methyl pyrrolidone), toluene.In addition, select to have in the situation of solvent of polarity, the concentration of phosphoric acid can be adjusted into 0.05～0.1mol/L(and be generally 0.06mol/L), the concentration of LiBr be adjusted into 0.5～1.0mol/L(be generally 0.63mol/L).
Flow velocity: 0.30～1.5mL/ divides
Standard substance: polystyrene
When adhesive composite contains (d) composition, (a) the content C of composition acontent C with respect to (d) composition dratio C a/ C d(mass ratio) is preferably 0.01～5, and more preferably 0.05～3, more preferably 0.1～2.By making to compare C a/ C dbe more than 0.01, can obtain better curability and bonding force, by making to compare C a/ C dbe below 5, can obtain better film-shaped and become second nature.
(e) composition: filler
Adhesive composite can contain filler ((e) composition) as required.Use (e) composition, can control the viscosity of adhesive composite, the physical property of the solidfied material of adhesive composite etc.Particularly, if use (e) composition, the inhibition that the space in the time of can realizing such as connection produces is, the reduction of the hydroscopicity of the solidfied material of adhesive composite etc.
As (e) composition, can use insulating properties inorganic filler, whisker, resin extender etc.In addition, as (e) composition, can be used alone or two or more kinds may be used.
As insulating properties inorganic filler, for example, can enumerate glass, silicon dioxide, aluminium oxide, titanium oxide, carbon black, mica and boron nitride.Wherein, preferred silicon dioxide, aluminium oxide, titanium oxide and boron nitride, more preferably silicon dioxide, aluminium oxide and boron nitride.
As whisker, for example, can enumerate aluminium borate, aluminium titanates, zinc oxide, calcium silicates, magnesium sulfate and boron nitride.
As resin extender, for example, can enumerate the filler of resins such as comprising polyurethane, polyimides.
Resin extender and organic principle (epoxy resin with curing agent etc.) are compared, and coefficient of thermal expansion is little, so the raising effect of connection reliability is excellent.In addition, if use resin extender, can easily carry out the viscosity adjustment of adhesive composite.In addition, resin extender is compared with inorganic filler, and the function that relaxes stress is excellent, if therefore use resin extender, and peeling off in the time of can further suppressing Reflow Soldering test etc.
Inorganic filler is compared with resin extender, and coefficient of thermal expansion is little, if therefore use inorganic filler, can realize the low-thermal-expansion rate of adhesive composite.In addition, in inorganic filler, majority is to utilize universal product to carry out the product that particle diameter is controlled gained, therefore also preferred viscosities adjustment.
Resin extender and inorganic filler have respectively favourable effect, therefore can use any one according to purposes, also can the two be mixed and be used in order to show the function of the two.
(e) shape of composition, particle diameter and content are not particularly limited.In addition, (e) composition also can suitably have been adjusted physical property by surface treatment.
(e) content of composition, in the total amount benchmark of adhesive composite, is preferably 10～80 quality %, more preferably 15～60 quality %.
(e) composition preferably consists of insulant.(e), when composition for example, consists of conductive material (, scolding tin, gold, silver, copper etc.), insulating reliability (particularly HAST patience) likely reduces.
(other compositions)
In adhesive composite, can also coordinate the additives such as antioxidant, silane coupler, titanium coupling agent, levelling agent, ion trap agent.They can use separately a kind or two or more is used in combination.About their use level, as long as be suitably adjusted to the effect that shows each additive.
Adhesive composite can be shaped to film-form and use as above-mentioned resin film.In addition, also can be by resin varnish described later as above-mentioned resin paste.Below, an example that shows the manufacture method of the resin film that has used adhesive composite.
First, by (a) composition, (b) composition and (c) composition and (d) composition, (e) that add as required becomes to grade and adds in organic solvent, by be uniformly mixed, mixing etc., make its dissolving or dispersion, thereby modulate resin varnish.Afterwards, on the base film that the demoulding processes, use after the coating resin varnish such as doctor knife coater, roll coater, applicator having implemented, by heating, remove organic solvent, thereby can on base film, form resin film.
The thickness of resin film is not particularly limited, and for example, is preferably the semiconductor wafer of multilayer resin film or the height of the splicing ear that substrate has 0.5～1.5 times, and more preferably 0.6～1.3 times, more preferably 0.7～1.2 times.
The thickness of resin film is 0.5 times of height of splicing ear when above, and the caused space of not filling that can fully suppress bonding agent produces, and can further improve connection reliability.In addition, thickness is 1.5 times when following, and the amount of the bonding agent of extruding from chip join domain in the time of can fully suppressing to connect, therefore can fully prevent that bonding agent is attached in unwanted part.When the thickness of resin film is greater than 1.5 times, splicing ear must be removed a large amount of bonding agents, easily produces poor flow.In addition, with respect to the reduction (microminiaturization of projection diameter) of thin space, the caused splicing ear of spininess pinization, remove a large amount of resins the infringement of splicing ear is become to large, therefore not preferred.
Conventionally the height of splicing ear is more than 5～100 μ m, and based on this, the thickness of resin film is preferably 2.5～150 μ m, more preferably 3.5～120 μ m.
As for modulating the organic solvent of resin varnish, preferably having can be by the organic solvent of the characteristic of each composition uniform dissolution or dispersion, for example, can enumerate dimethyl formamide, dimethylacetylamide, METHYLPYRROLIDONE, dimethyl sulfoxide (DMSO), diethylene glycol dimethyl ether, toluene, benzene, dimethylbenzene, methyl ethyl ketone, oxolane, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, diox, cyclohexanone and ethyl acetate.These organic solvents may be used singly or in combination of two or more.Being uniformly mixed of resin varnish when modulation, mixingly for example can carry out with mixer, puddle mixer, three-roll grinder, ball mill, ball mill or homogenizer.
As base film, as long as having the thermal endurance that can tolerate the heating condition that makes organic solvent when volatilization is just not particularly limited, can illustration polypropylene film, the polyolefin film such as poly-methyl pentene film, polyester film, polyimide film and the Polyetherimide films such as polyethylene terephthalate thin film, Polyethylene Naphthalate film.Base film is not limited to the individual layer consisting of these films, can be also the plural layers that consist of material of more than two kinds.
Drying condition when organic solvent is volatilized from coat the resin varnish base film is preferably made as the condition that organic solvent fully volatilizees, and particularly, preferably carries out the heating of 50～200 ℃, 0.1～90 minute.Preferably organic solvent is removed until be below 1.5 quality % with respect to resin film total amount.
Above, preferred implementation of the present utility model is illustrated, but the utility model is not limited to above-mentioned execution mode.
Embodiment
Below, by embodiment, be described more specifically the utility model, but the utility model is not limited to embodiment.
The compound using in each embodiment and comparative example is as follows.
(a) epoxy resin
Containing the multifunctional solid epoxy of tris-phenol skeleton (japan epoxy resin Co., Ltd. system, trade name " EP1032H60 ", hereinafter referred to as " EP1032 ".）
Bisphenol F type liquid epoxy resin (japan epoxy resin Co., Ltd. system, trade name " YL983U ", hereinafter referred to as " YL983 ".）
Flexible-epoxy (japan epoxy resin Co., Ltd. system, trade name " YL7175 ", hereinafter referred to as " YL7175 ".）
(b) curing agent
2,4-diaminourea-6-［ 2 '-methylimidazolyl-(1 ') ］-ethyl-s-triazine isocyanuric acid addition product (four countries change into Co., Ltd.'s system, trade name " 2MAOK-PW ", hereinafter referred to as " 2MAOK ".）
(c1) there is the formed solder flux of compound of the represented group of formula (1)
2-methylglutaric acid (approximately 78 ℃ of Aldrich company system, fusing points)
Dimethyl succinic acid (approximately 116 ℃ of Aldrich company system, fusing points)
(c2) there is formula (1-1) or (1-2) the formed solder flux of compound of represented group
2,2-dimethylated pentanedioic acid (approximately 83 ℃ of Aldrich company system, fusing points)
3,3-dimethylated pentanedioic acid (approximately 100 ℃ of Aldrich company system, fusing points)
(c ') other solder flux
Glutaric acid (Tokyo changes into approximately 98 ℃ of Co., Ltd.'s system, fusing points)
Succinic acid (approximately 188 ℃ of Aldrich company system, fusing points)
3-methylglutaric acid (Tokyo changes into approximately 87 ℃ of Co., Ltd.'s system, fusing points)
Adipic acid (Tokyo changes into approximately 153 ℃ of Co., Ltd.'s system, fusing points)
Malonic acid (approximately 135～137 ℃ of Aldrich company system, fusing points)
1,3,5-pentane tricarboxylic acids (Tokyo changes into approximately 113 ℃ of Co., Ltd.'s system, fusing points, hereinafter referred to as " penta
Alkane tricarboxylic acids ".）
(d) more than 10000 macromolecule component of molecular weight
Phenoxy resin (Toto Kasei KK's system, trade name " ZX1356-2 ", Tg: approximately 71 ℃, Mw: approximately 63000, hereinafter referred to as " ZX1356 ".）
(e) filler
(e-1) inorganic filler
Silica filler (Admatechs of Co., Ltd. system, trade name " SE2050 ", average grain diameter 0.5 μ m, hereinafter referred to as " SE2050 ".）
Epoxy silane process silica filler (Admatechs of Co., Ltd. system, trade name " SE2050-SEJ ", average grain diameter 0.5 μ m, hereinafter referred to as " SE2050-SEJ ".）
Acrylic acid surface treating nano silica filler (Admatechs of Co., Ltd. system, trade name " YA050C-SM ", the about 50nm of average grain diameter, hereinafter referred to as " SM nano silicon ".）
(e-2) resin extender
Organic filler (ROHM AND HAAS Amada Co., Ltd. system, trade name " EXL-2655 ", hud typed organic fine particles, hereinafter referred to as " EXL-2655 ".）
The weight average molecular weight of macromolecule component (Mw) is obtained by GPC method.The detailed content of GPC method is as follows.
Device name: HPLC-8020(trade name, Dong Cao company system)
Chromatographic column: 2 GMHXL+1 prop up G-2000XL
Detector: RI detector
Chromatogram column temperature: 35 ℃
Flow velocity: 1mL/ divides
Standard substance: polystyrene
(embodiment 1)
Drop into epoxy resin 3g(" EP1032 " 2.4g, " YL983 " 0.45g, " YL7175 " 0.15g), curing agent " 2MAOK " 0.1g, 2-methylglutaric acid 0.1g(0.69mmol), inorganic filler 1.9g(" SE2050 " 0.38g, " SE2050-SEJ " 0.38g, " SM nano silicon " 1.14g), resin extender (EXL-2655) 0.25g, and methyl ethyl ketone (solid constituent amount is the amount of 63 quality %), add the pearl of diameter 0.8mm and the pearl of diameter 2.0mm with solid constituent identical weight, use ball mill (Fritsch Amada Co., Ltd., planet-shaped atomizer P-7) stir 30 minutes.Afterwards, add 1.7g phenoxy resin (ZX1356), reuse ball mill and stir after 30 minutes, by filtering, by stirring pearl used, remove, obtain resin varnish.
Use miniature precision apparatus for coating (Lian Jing essence machine) that the resin varnish of gained is coated on base film (film Co., Ltd. of Di Ren Du Pont system, trade name " PurexA53 "), use cleaning oven (ESPEC system) to be dried (70 ℃/10min), obtain resin film.
(embodiment 2～4, comparative example 1～6)
Except change the composition of the material using as the record of following table 1 and table 2, operate similarly to Example 1, obtain the resin film of embodiment 2～4 and comparative example 1～6.
Use the resin film obtaining in embodiment 1～4 and comparative example 1～6, implement following evaluation test.
Internuncial evaluation of < initial stage >
The resin film of making in embodiment or comparative example is cut into the size (long 8mm * wide 8mm * thick 0.045mm) of regulation, be pasted on glass epoxy substrate (glass epoxide base material: 420 μ m are thick, copper wiring: 9 μ m are thick) on, use upside-down mounting erecting device " FCB3 " (Panasonic system, trade name) semiconductor chip of mounting strap solder bump (chip size: long 7.3mm * wide 7.3mm * thick 0.15mm, bump height: copper post+scolding tin meter approximately 40 μ m, number of lugs 328) (mounting condition: 350 ℃ of crimp head temperature, 5 seconds crimping time, crimping pressure 0.5MPa).Thus, make glass epoxy substrate and carry out with the semiconductor chip with solder bump the semiconductor device that daisy chain is formed by connecting.
Use universal instrument (ADVANTEST system, trade name " R6871E ") to measure the contact resistance value of the semiconductor device of gained, thereby evaluate the initial stage conducting after installing.The average evaluation that is 10.0～13.5 Ω by contact resistance value is connectivity good " A ", contact resistance value is that the average evaluation of 13.5～20 Ω is connectivity bad " B ", and contact resistance value is greater than the situation of 20 Ω, situation and the caused Open(resistance value of bad connection that contact resistance value is less than 10 Ω do not show) situation is all evaluated as connectivity bad " C ".
> is evaluated in < space
For the semiconductor device of making by said method, by ultrasonic wave localization diagnosis device (trade name " Insight-300 ", INSIGHT system), take appearance images, utilize scanning device GT-9300UF(EPSON company system, trade name) obtain the image of curing resin layer on chip (layer being formed by the solidfied material of resin film), use image processing software Adobe Photoshop, by tonal correction, convert black and white to and identify gap, by histogram, calculate the shared ratio in gap.Using the area of the cured resin part on chip as 100%, space generation rate is that the average evaluation below 10% is " A ", and 10～20% are evaluated as " B ", and the average evaluation more than 20% is " C ".
< scolding tin wettability evaluation >
For the semiconductor device of making by said method, observe the cross section of connecting portion, the wetting average evaluation of the above scolding tin of upper surface 90% of Cu distribution be that to be less than 90% average evaluation be " B " (soaking deficiency) for " A " (well), scolding tin wetting.
Bonding force before < moisture absorption at 260 ℃ is measured >
The resin film of making in embodiment or comparative example is cut into the size (long 5mm * wide 5mm * thick 0.045mm) of regulation, at 70 ℃, be pasted on silicon (long 5mm * wide 5mm * thick 0.725mm, oxide-film apply) upper, use thermo-compressed testing machine (Hitachi changes into Techno-Plant Co., Ltd. system) to be crimped on the glass epoxy substrate (thickness 0.02mm) (crimping condition: 250 ℃ of crimp head temperature, 5 seconds crimping time, crimping pressure 0.5MPa) that has applied solder resist (sun ink system, trade name " AUS308 ").Then, in cleaning oven (ESPEC system), carry out rear solidify (175 ℃, 2h), obtain the semiconductor device as test piece.
For above-mentioned test piece, on the hot plate of 260 ℃, use bonding force determinator (DAGE company system, universal type Bonding Tester DAGE4000 type), under the condition of the instrument height 0.05mm apart from substrate, instrument speed 0.05mm/s, measure bonding force.
Bonding force after < moisture absorption at 260 ℃ is measured >
The resin film of making in embodiment or comparative example is cut into the size (long 5mm * wide 5mm * thick 0.045mm) of regulation, at 70 ℃, be pasted on silicon (long 5mm * wide 5mm * thick 0.725mm, oxide-film apply) upper, use thermo-compressed testing machine (Hitachi changes into Techno-Plant Co., Ltd. system) to be crimped on the glass epoxy substrate (thickness 0.02mm) (crimping condition: 250 ℃ of crimp head temperature, 5 seconds crimping time, crimping pressure 0.5MPa) that has applied solder resist (sun ink system, trade name " AUS308 ").Then, in cleaning oven (ESPEC system), carry out rear solidify (175 ℃, 2h), obtain the semiconductor device as test piece.
Above-mentioned test piece is placed 48 hours in 85 ℃, the Constant Temperature and Humidity Chambers (ESPEC system, PR-2KP) of relative humidity 60%, after taking-up, on the hot plate of 260 ℃, use bonding force determinator (DAGE company system, universal type Bonding Tester DAGE4000 type), under the condition of the instrument height 0.05mm apart from substrate, instrument speed 0.05mm/s, measure bonding force.
The evaluation > of the reflux-resisting welded property of <
Use encapsulant (Hitachi Chemical Co., Ltd.'s system, trade name " CEL9750ZHF10 "), the semiconductor device of the method made of recording in to internuncial evaluation > by the < initial stage under 180 ℃, 6.75MPa, the condition of 90 seconds carries out mold, in cleaning oven (ESPEC system), in 175 ℃, solidify after carrying out 5 hours, obtain packaging body.Then, under JEDEC level 2 conditions, this packaging body is carried out after high temperature moisture absorption, packaging body is passed through 3 times in IR reflow soldering (FURUKAWA ELECTRIC system, trade name " SALAMANDER ").For the connectivity of the packaging body after Reflow Soldering, by evaluating with the same method of internuncial evaluation of above-mentioned initial stage, as the evaluation of reflux-resisting welded property.By peeling off without peeling off and connect good average evaluation for " A ", having produced, the average evaluation of bad connection is " B ".
The resistance to TCT of < evaluates (evaluation of connection reliability) >
Use encapsulant (Hitachi Chemical Co., Ltd.'s system, trade name " CEL9750ZHF10 "), the semiconductor device of the method made of recording in to internuncial evaluation > by the < initial stage under 180 ℃, 6.75MPa, the condition of 90 seconds carries out mold, in cleaning oven (ESPEC system), in 175 ℃, solidify after carrying out 5 hours, obtain packaging body.Then, this packaging body is connected with thermal cycling test machine (ETAC system, trade name " THERMAL SHOCK CHAMBER NT1200 "), flow through 1mA electric current, using 25 ℃ 2 minutes/-55 ℃ 15 minutes/25 ℃ 2 minutes/125 ℃ 15 minutes/25 ℃ 2 minutes as 1 circulation, evaluate to repeat the variation of the contact resistance after 1000 circulations.Also the average evaluation that there is no larger variation after comparing 1000 circulations with the resistance value waveform at initial stage for " A ", the average evaluation that produced difference more than 1 Ω be " B ".
< insulating reliability test (HAST test: Highly Accelerated Storage Test) >
By the resin film of making in embodiment or comparative example (thickness: 45 μ m) be pasted on comb-type electrode and evaluate TEG(Hitachi Chemical Co., Ltd. system, wiring closet distance: 50 μ m) above, in cleaning oven (ESPEC system), solidify 2 hours in 175 ℃.Sample after solidifying is arranged on to accelerated life test device (HIRAYAMA company system, trade name " PL-422R8 ", condition: 130 ℃/85%RH/100 hour, 5V applied voltage) upper, measures insulation resistance.Insulation resistance after 100 hours is 10 8average evaluation more than Ω is " A ", 10 7Ω is above and be less than 10 8the average evaluation of Ω is " B ", is less than 10 7the average evaluation of Ω is " C ".
Table 1
Table 2

Claims (6)

1. a duplexer, is characterized in that, it is the duplexer that lamination on the interarea of semiconductor wafer obtains containing the resin film of solder flux, has the splicing ear of oxidized film coating on this interarea of described semiconductor wafer, and described duplexer possesses:
The resin combination layer being formed by described resin film; And
Utilize described solder flux that at least a portion reduction of described oxide-film is removed, thus the described semiconductor wafer that at least a portion of described splicing ear is exposed in described resin combination layer.
2. a duplexer, is characterized in that, it is the duplexer that coating obtains containing resin paste of solder flux on the interarea of semiconductor wafer, has the splicing ear of oxidized film coating on this interarea of described semiconductor wafer, and described duplexer possesses:
The resin combination layer being formed by described resin paste; And
Utilize described solder flux that at least a portion reduction of described oxide-film is removed, thus the described semiconductor wafer that at least a portion of described splicing ear is exposed in described resin combination layer.
3. a duplexer, is characterized in that, it is the duplexer that lamination on the interarea of substrate obtains containing the resin film of solder flux, has the splicing ear of oxidized film or organic film coating on this interarea of described substrate, and described duplexer possesses:
The resin combination layer being formed by described resin film; And
At least a portion of described oxide-film or described organic film is removed, thus the described substrate that at least a portion of described splicing ear is exposed in described resin combination layer.
4. a duplexer, is characterized in that, it is the duplexer that coating obtains containing resin paste of solder flux on the interarea of substrate, has the splicing ear of oxidized film or organic film coating on this interarea of described substrate, and described duplexer possesses:
The resin combination layer being formed by described resin paste; And
At least a portion of described oxide-film or described organic film is removed, thus the described substrate that at least a portion of described splicing ear is exposed in described resin combination layer.
5. a semiconductor device, it is characterized in that, by the duplexer to described in claim 1 or 2 carry out singualtion obtain, be provided with on the interarea of splicing ear, possess the semiconductor chip of resin combination layer with on interarea, have splicing ear substrate configuration mode for according to the described interarea of described semiconductor chip with the described interarea of described substrate across the relative mode of described resin combination layer, and the described splicing ear of described semiconductor chip heats and pressurizes and be electrically connected to the described splicing ear utilization of described substrate.
6. a semiconductor device, it is characterized in that, by the duplexer described in claim 3 or 4 and on interarea, have splicing ear semiconductor chip configuration mode for according to the described interarea of described substrate with the described interarea of described semiconductor chip across the relative mode of described resin combination layer, and the described splicing ear utilization of the described splicing ear of described substrate and described semiconductor chip is heated and is pressurizeed and be electrically connected to.
CN201320085513.8U 2012-02-24 2013-02-25 Laminated body and semiconductor device Expired - Lifetime CN203826364U (en)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP2012-038544 2012-02-24
JP2012-038550 2012-02-24
JP2012038550 2012-02-24
JP2012038544 2012-02-24
JP2012-119759 2012-05-25
JP2012-119762 2012-05-25
JP2012119759 2012-05-25
JP2012119762 2012-05-25
JPPCT/JP2012/075414 2012-10-01
PCT/JP2012/075412 WO2013125086A1 (en) 2012-02-24 2012-10-01 Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device
PCT/JP2012/075414 WO2013125087A1 (en) 2012-02-24 2012-10-01 Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device
JPPCT/JP2012/075412 2012-10-01

Publications (1)

Publication Number Publication Date
CN203826364U true CN203826364U (en) 2014-09-10

Family

ID=50063172

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201320085513.8U Expired - Lifetime CN203826364U (en) 2012-02-24 2013-02-25 Laminated body and semiconductor device
CN201320085424.3U Expired - Lifetime CN203434148U (en) 2012-02-24 2013-02-25 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201320085424.3U Expired - Lifetime CN203434148U (en) 2012-02-24 2013-02-25 Semiconductor device

Country Status (1)

Country Link
CN (2) CN203826364U (en)

Also Published As

Publication number Publication date
CN203434148U (en) 2014-02-12

Similar Documents

Publication Publication Date Title
JP5900602B2 (en) Semiconductor adhesive, flux agent, semiconductor device manufacturing method, and semiconductor device
CN103642441B (en) Adhesive composition, method for manufacturing semiconductor device, and semiconductor device
TWI580754B (en) Semiconductor device and manufacturing method thereof
JP5915727B2 (en) Semiconductor device and manufacturing method thereof
TWI676183B (en) Conductive paste, connection structure, and manufacturing method of connection structure
TW201546828A (en) Conductive paste, connection structure, and connection structure manufacturing method
JP7351393B2 (en) Film adhesive for semiconductors, method for manufacturing semiconductor devices, and semiconductor devices
JP7259219B2 (en) Resin composition, cured product thereof, and method for manufacturing semiconductor device
JP5867584B2 (en) Adhesive for semiconductor and method for manufacturing semiconductor device
CN203826364U (en) Laminated body and semiconductor device
JP6569225B2 (en) Adhesive for semiconductor, method for manufacturing semiconductor device, and semiconductor device
JP2020072149A (en) Film glue for semiconductor, manufacturing method of semiconductor device and semiconductor device
TW202410369A (en) Film adhesive for semiconductors, manufacturing method of semiconductor device, and semiconductor device

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20140910

CX01 Expiry of patent term