CN203825357U - Structure for identifying to-be measured graph of photomask - Google Patents
Structure for identifying to-be measured graph of photomask Download PDFInfo
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- CN203825357U CN203825357U CN201420072328.XU CN201420072328U CN203825357U CN 203825357 U CN203825357 U CN 203825357U CN 201420072328 U CN201420072328 U CN 201420072328U CN 203825357 U CN203825357 U CN 203825357U
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- Prior art keywords
- matrix
- measured
- identifying
- photomask
- grooves
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- 239000011159 matrix material Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000009826 distribution Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The utility model provides a structure for identifying a to-be measured graph of a photomask. The structure at least comprises a substrate and a graph layer arranged on the substrate, wherein a plurality of grooves contacted with the substrate are formed on the surface of the graph layer; a first matrix is formed by the plurality of grooves; a second matrix unit is formed on the graph layer between every two adjacent grooves in each row of the first matrix; when the plurality of grooves which are continuously distributed in any row of the first matrix form a structure to be measured, the two second matrix units which are respectively adjacent to the two grooves arranged at the head and the tail in the structure to be measured left and right have identification marks; when the plurality of second matrix units which are continuously distributed in any row of a second matrix form a to-be-measured structure, the two second matrix units which are respectively adjacent to the two units arranged at the head and the tail in the to-be-measured structure left and right have identification marks. According to the structure, the graph to be measured is identified by the identification marks, so that the graph can be easily identified by a worker or a measurement device when being measured, the measurement error is prevented, and the efficiency of a semiconductor process is effectively increased.
Description
Technical field
The utility model relates to a kind of semiconductor preparation field, particularly relates to a kind of for identifying the structure of photomask figure to be measured.
Background technology
In the whole flow process of manufacturing at semiconductor, one of them link is figure to be transferred to the process of crystal column surface from domain, needs to use photomask or claim that light shield completes during this.This part is the key component of Connection between Processes, is also the highest part of cost in flow process.
Need to use photoetching process in the link of the figure on domain being transferred to wafer, so-called photoetching process be by the figure on light shield by exposure multiple copies to the crystal column surface that scribbles photoresist, the figure after photoetching development on light shield appears on wafer.On domain, needing to be transferred to figure in a wafer has numerously, and along with constantly the reducing of device critical size, the optical approach effect that diffraction and interference form in photoetching process becomes and hinders figure on light shield and effectively transfer to the factor on wafer.For compensate for optical approach effect, make litho pattern be transferred to crystal column surface distortion does not occur, closing cover deviser utilizes computerized algorithm to close on correction (OPC to the figure generation optics of small-feature-size on light shield, Optical Proximity Correction), optics is closed on to the domain obtaining after correction and be fabricated on light shield again, and then the figure on light shield is transferred to crystal column surface.
And in reality, due to carry out optics close on revise after domain often there is a large amount of and similar figure, such as shape is identical, width differs very little strip line or shape is identical, size differs very little metal throuth hole.And these densely distributed and shape and size and similar figure thereof are after being transferred on light shield, described light shield need to be put into and under scanning electron microscope, measure its live width, and these are distributed in similar figure each other on light shield and are difficult to it be identified measuring in window, and what be difficult to find required measurement is which or which actually.
Therefore, for recognize on described light shield, need measure be which figure, be necessary to propose a kind of mark structure of identifying this type of figure.This mark does not affect the imaging of the original figure of light shield on wafer simultaneously.
Utility model content
The shortcoming of prior art in view of the above, it is a kind of for identifying the structure of photomask figure to be measured that the purpose of this utility model is to provide, and after solving prior art OPC correction, shape and some similar figure of size measured to the problem of identifying.
For achieving the above object and other relevant objects, it is a kind of for identifying the structure of photomask figure to be measured that the utility model provides, and describedly at least comprises for the structure of identifying photomask figure to be measured:
Substrate; Be positioned at the graph layer of described upper surface of base plate;
Described graph layer surface etch has the some grooves with described substrate contacts; The distribution of described some grooves forms the first matrix; Graph layer in every row of described the first matrix between adjacent two grooves forms the second matrix unit; The distribution of described the second matrix unit forms the second matrix;
When some grooves of continuous distribution in any a line of described the first matrix are when until measuring structure, in left adjacent and right two adjacent the second matrix units, there is respectively the identification marking for measuring respectively with two grooves of first and last in some grooves of described continuous distribution;
When some second matrix units of continuous distribution in any a line of described the second matrix are when until measuring structure, in left adjacent and right two adjacent the second matrix units, there is respectively the identification marking for measuring respectively with two unit of first and last in some second matrix units of described continuous distribution.
As of the present utility model, for identifying a kind of preferred version of structure of photomask figure to be measured, the material of described substrate comprises quartz glass.
As of the present utility model for identifying a kind of preferred version of structure of photomask figure to be measured, described is the some windows of etching in second matrix unit on described graph layer surface for the identification marking measuring, and the etching depth of described some windows is less than the degree of depth of described groove.
For identifying a kind of preferred version of structure of photomask figure to be measured, described first, second matrix is respectively row matrix as of the present utility model, and groove and described the second matrix unit in described the first matrix is positioned at same a line.
As of the present utility model, for identifying a kind of preferred version of structure of photomask figure to be measured, the groove in described the first matrix and described the second matrix unit shape are all bar shaped.
As of the present utility model for identifying a kind of preferred version of structure of photomask figure to be measured, described in be respectively in first, second matrix of row matrix, the identification marking being shaped as in the second matrix unit of bar shaped has one or more.
As of the present utility model, for identifying a kind of preferred version of structure of photomask figure to be measured, the vertical sectional shape of described some windows comprises rectangle, del or U-shaped.
As of the present utility model, for identifying a kind of preferred version of structure of photomask figure to be measured, the shape of cross section of described some windows comprises circle, square, rectangle or triangle.
As of the present utility model, for identifying a kind of preferred version of structure of photomask figure to be measured, the shape of cross section of described some grooves is rectangle.
As of the present utility model, for identifying a kind of preferred version of structure of photomask figure to be measured, the material of described graph layer is chromium.
As mentioned above, of the present utility model for identifying the structure of photomask figure to be measured, the figure to be measured on a light shield is divided into two classes: a class is the protruding chromium structure on substrate, the chromium structure of described projection is the cellular construction that forms matrix; Another kind of is groove on described graph layer, and described groove also forms a kind of rectangular distribution.And be difficult to be distinguished by people in the measurement under Electronic Speculum in the later stage by the graphic structure of matrix distribution on this two classes light shield, therefore on described graph layer, form identification marking manually distinguishing when measuring is set in the matrix unit of described bulge-structure, this identification marking, because size is enough little, is not enough to affect the imaging of original figure on wafer.Of the present utility model have following beneficial effect for identifying photomask wait the structure that measures figure: when some figure of a large amount of densely distributed and shapes and size and similar figure thereof need to measure, this figure that need to measure can be identified by people or measurement equipment fast on the display screen that is presented on measurement platform, and caught by board fast, therefore improved the processing procedure efficiency of light shield, avoid causing product failure because the similar impalpable generating capacity of figure sniffing misleads, effectively improved the yield of production efficiency and production.
Brief description of the drawings
Fig. 1 is of the present utility model a kind of for identifying the schematic top plan view of structure of photomask figure to be measured.
Fig. 2 is the cross-sectional view along AA' direction of Fig. 1.
Fig. 3 is another kind of the present utility model for identifying the schematic top plan view of structure of photomask figure to be measured.
Fig. 4 is the schematic top plan view that graphical distribution to be measured of the present utility model is row matrix.
Element numbers explanation
10 substrates
11 graph layers
12 grooves
13 second matrix units
14,141,17,171 treat measuring structure
15,16,18,19,43 identification markings
41 bar shaped the second matrix units
42 strip grooves
Embodiment
By specific instantiation, embodiment of the present utility model is described below, those skilled in the art can understand other advantages of the present utility model and effect easily by the disclosed content of this instructions.The utility model can also be implemented or be applied by other different embodiment, and the every details in this instructions also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present utility model.
Refer to Fig. 1～Fig. 4.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present utility model in a schematic way, satisfy and only show with assembly relevant in the utility model in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
Embodiment mono-
As shown in Figure 1, expression is of the present utility model a kind of for identifying the schematic top plan view of structure of photomask figure to be measured.And Fig. 2 is the diagrammatic cross-section of Fig. 1 along dotted line AA' direction.In the making of semiconductor light shield, the material of described substrate is generally quartz glass, and the upper surface of described substrate deposits layer of material film, i.e. graph layer 11 in Fig. 1, and for the needed figure of etching, the material of graph layer 11 described in the utility model is chromium.The material that other are used as etching figure on light shield well-known to those skilled in the art all drops on the utility model scope required for protection.Etching is carried out to it in surface at described graph layer, until etching forms the groove contacting with described substrate, forms some grooves 12 as shown in Figure 1, and the degree of depth of described groove 12 equates with the thickness of described graph layer; Described some grooves form certain distribution on described graph layer surface.In the present embodiment, described groove is the groove that is evenly distributed on described substrate surface, and the distribution that defines some grooves 12 in the present embodiment forms the first matrix.Described some groove 12 shapes are identical simultaneously, because described groove can be used as the transition diagram of light shield to wafer, can be used as the pattern that follow-up photoetching forms through hole, therefore, the shape of cross section of some grooves described in the present embodiment is rectangle, some rectangle each other size differs very little, and with the naked eye indistinguishable of the difference of the length of side of for example described rectangle only has the numerical value that could accurately learn its length of side by the measurement of measurement platform.
In the present embodiment, define the second matrix on the surface of described graph layer, described the second matrix unit is: the graph layer in every row of described the first matrix between adjacent two grooves forms described the second matrix unit.As shown in Figure 1, have described the second matrix unit 13 in the position adjacent with described each groove 12, corresponding with 12 of the grooves of unit in described the first matrix, the distribution of described the second matrix unit has also formed matrix, i.e. described the second matrix.
The purpose of this utility model is for the some grooves in described the first matrix or some the second matrix units are carried out to identification to it in measurement process, therefore, to some groove in described first matrix of required measurement or the unit of described some the second matrix is marked, thus to its in addition identification marking be conducive to distinguish.
In the present embodiment, be to described some grooves identification marking in addition, in reality measurement process, generally to measuring by some groove in the groove of matrix distribution in the some of substrate surface, when in the groove of required measurement any a line in described the first matrix, and described some grooves are continuous distribution in this row, if each groove part of this continuous distribution identifies it, more lengthy and tedious.Therefore in the present embodiment, some groove unifications of this continuous distribution are done to the identification marking simple easy operating that can seem, and can not caused harmful effect to subsequent technique.Therefore, when some grooves of continuous distribution in any a line of described the first matrix are when until measuring structure, in left adjacent and right two adjacent the second matrix units, there is respectively the identification marking for measuring respectively with two grooves of first and last in some grooves of described continuous distribution; As shown in Figure 1, described groove is to treat measuring structure 14 and the adjacent measuring structure 141 for the treatment of in same a line with its continuous distribution, as example, described two grooves are arbitrarily treated measuring structure in a line as continuous distribution in described the first matrix, if treat that measuring structure identifies to these two, with the groove surfaces identification marking in addition for the treatment of measuring structure adjacent position.As shown in Figure 1, treat measuring structure 14 and treat that measuring structure 141 is for continuous distribution is in same a line of described matrix due to described, described first the treat measuring structure for the treatment of measuring structure of measuring structure 141 as this continuous distribution for the treatment of, and treat that measuring structure 14 treats measuring structure as the end for the treatment of measuring structure of this continuous distribution, therefore in left adjacent described the second matrix unit of measuring structure 141, there is identification marking 15 with described first treating, equally, treat to there is identification marking 16 in right adjacent described the second matrix unit of measuring structure 14 with described end.When the figure on described substrate is placed into when it is measured in measurement platform, on measurement platform display screen, can clearly distinguish that groove between described identification marking 15 and identification marking 16 is for treating measuring structure.
Identification marking in the present embodiment adopts the window of etching in described the second matrix unit.In actual processing procedure, in order not affect the pattern of finally transferring on crystal column surface, described window only plays the pattern in identification light shield, and therefore, the etching depth of described some windows requires to be less than the degree of depth of described groove.Fig. 2 is expressed as the diagrammatic cross-section of Fig. 1 in the present embodiment, and wherein identification marking 15 and identification marking 16 is the window of the groove shape of etching in described the second matrix unit, is used for identifying treating measuring structure 141 and treating measuring structure 14 in Fig. 2.The shape of its longitudinal section of described window can be rectangle, can be also del etc.In the present embodiment, as shown in Figure 2, be rectangle as its section shape of window of identification marking 15 and identification marking 16.The shape of cross section of described some windows also has multiple choices, can be circle, rectangle or triangle.In the present embodiment, the shape of cross section of described some windows adopts rectangle, and as shown in Figure 1, the shape of cross section of identification marking 15 and identification marking 16 is rectangle.
Embodiment bis-
From figure to be measured in embodiment mono-be the groove of etching in described graph layer surface different be, the measuring structure for the treatment of in the present embodiment is some second matrix units of continuous distribution in any a line of defined the second matrix of the utility model, as shown in Figure 3, described the second matrix unit 17 and the second matrix unit 171 are two matrix units of continuous distribution in same a line of described the second matrix, first second matrix unit of two matrix units that wherein the second matrix unit 17 is continuous distribution, the end of two matrix units that described the second matrix unit 171 is continuous distribution the second matrix unit.In the second matrix unit adjacent with this first second matrix unit left side, there is identification marking 18; There is identification marking 19 equally, with in right the second adjacent matrix unit of this end the second matrix unit.Described two identification markings are treated measuring structure 17 and treat measuring structure 171 in order to mark.
If when in the time that measuring structure is the strip structure being arranged in parallel with each other, as a kind of special circumstances of embodiment mono-and embodiment bis-: described the first matrix and the second matrix are row matrix simultaneously, and groove in described the first matrix and described the second matrix unit be shaped as bar shaped.As shown in Figure 4, the strip groove 42 in described the first matrix is positioned at same a line with described bar shaped the second matrix unit 41.Described strip groove 42 or bar shaped the second matrix unit 41 can be as treating measuring structure.And the identification marking that it is carried out to mark is identical with embodiment mono-and embodiment bis-, be to be also positioned at first the treating of this continuous distribution to treat in right adjacent bar shaped the second matrix unit of measuring structure in left adjacent bar shaped the second matrix unit of measuring structure and with the end of this continuous distribution.As the identification marking 43 in Fig. 4.In described bar shaped the second matrix unit, described identification marking can have one or more, identification marking 43 is the identification markings of multiple longitudinal arrangements in described bar shaped the second matrix unit as shown in Figure 4.
In sum, of the present utility model for identifying the structure of photomask figure to be measured, by forming, identification marking manually distinguishing when measuring is set in described matrix unit on described graph layer, in the time that some figure in a large amount of densely distributed and shapes and size and similar figure thereof need to measure, this figure that need to measure can be identified by people or measurement platform fast on the display screen that is presented on measurement platform, and caught by board fast, therefore improved the processing procedure efficiency of light shield, avoid causing product failure because the similar impalpable generating capacity of figure sniffing misleads, effectively improve the yield of production efficiency and production.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (9)
1. for identifying a structure for photomask figure to be measured, it is characterized in that, describedly at least comprise for the structure of identifying photomask figure to be measured:
Substrate; Be positioned at the graph layer of described upper surface of base plate;
Described graph layer surface etch has the some grooves with described substrate contacts; The distribution of described some grooves forms the first matrix; Graph layer in every row of described the first matrix between adjacent two grooves forms the second matrix unit; The distribution of described the second matrix unit forms the second matrix;
In left adjacent and right two adjacent the second matrix units, there is respectively the identification marking for measuring respectively with two grooves of first and last in some grooves of described continuous distribution;
Or in left adjacent and right two adjacent the second matrix units, there is respectively the identification marking for measuring respectively with two unit of first and last in some second matrix units of described continuous distribution;
Described is the some windows of etching in second matrix unit on described graph layer surface for the identification marking measuring, and the etching depth of described some windows is less than the degree of depth of described groove.
2. according to claim 1 for identifying the structure of photomask figure to be measured, it is characterized in that: the material of described substrate comprises quartz glass.
3. according to claim 1 for identifying the structure of photomask figure to be measured, it is characterized in that: described first, second matrix is respectively row matrix, and groove and described the second matrix unit in described the first matrix is positioned at same a line.
4. according to claim 3 for identifying the structure of photomask figure to be measured, it is characterized in that: the groove in described the first matrix and described the second matrix unit shape are all bar shaped.
According to described in claim 3 or 4 for identifying the structure of photomask figure to be measured, it is characterized in that: described in be respectively in first, second matrix of row matrix, the identification marking being shaped as in the second matrix unit of bar shaped has one or more.
6. according to claim 1 for identifying the structure of photomask figure to be measured, it is characterized in that: the vertical sectional shape of described some windows comprises rectangle, del or U-shaped.
7. according to claim 1 for identifying the structure of photomask figure to be measured, it is characterized in that: the shape of cross section of described some windows comprises circle, square, rectangle or triangle.
8. according to claim 1 for identifying the structure of photomask figure to be measured, it is characterized in that: the shape of cross section of described some grooves is rectangle.
9. according to claim 1 for identifying the structure of photomask figure to be measured, it is characterized in that: the material of described graph layer is chromium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420072328.XU CN203825357U (en) | 2014-02-19 | 2014-02-19 | Structure for identifying to-be measured graph of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420072328.XU CN203825357U (en) | 2014-02-19 | 2014-02-19 | Structure for identifying to-be measured graph of photomask |
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| Publication Number | Publication Date |
|---|---|
| CN203825357U true CN203825357U (en) | 2014-09-10 |
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| CN201420072328.XU Expired - Lifetime CN203825357U (en) | 2014-02-19 | 2014-02-19 | Structure for identifying to-be measured graph of photomask |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113093479A (en) * | 2021-04-02 | 2021-07-09 | 长鑫存储技术有限公司 | Alignment measurement mark structure and alignment measurement method |
-
2014
- 2014-02-19 CN CN201420072328.XU patent/CN203825357U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113093479A (en) * | 2021-04-02 | 2021-07-09 | 长鑫存储技术有限公司 | Alignment measurement mark structure and alignment measurement method |
| CN113093479B (en) * | 2021-04-02 | 2022-10-28 | 长鑫存储技术有限公司 | Alignment measurement mark structure and alignment measurement method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140910 |