CN203824901U - Device for detecting built-in electric field of telluride semiconductor detector - Google Patents

Abstract

The utility model discloses a device for detecting a built-in electric field of a telluride semiconductor detector. The device includes a halogen tungsten lamp, a 980 nm filter, a lens, the telluride semiconductor detector, a three-dimensional translation platform, a polarizer, an analyzer, an objective and a camera, wherein the telluride semiconductor detector is horizontally placed on the three-dimensional translation platform; a DC voltmeter is arranged on the telluride semiconductor detector; a three-dimensional control platform and the camera are both connected with a computer through data lines; a switch is arranged on the halogen tungsten lamp. According to the utility model, based on the principle that the value of light intensity received by the camera is in direct proportion to the square value of the intensity of the built-in electric field of the telluride semiconductor detector, the electric field distribution of the telluride semiconductor detector can be studied, and further the distribution of the space charge is obtained, and defects inside the telluride semiconductor detector can be researched.

Description

Detect the device of tellurides as semiconductor detector built in field

Technical field

The utility model relates to a kind of device that detects tellurides as semiconductor detector built in field.

Background technology

Detect tellurides as semiconductor detector due under DC Electric Field, in detector work, be difficult to obtain the effect of actual electric field, and in detector work, suppose it is uniform electric field, inner electric field is nonlinear in fact, thereby has caused that collection efficiency and the energy resolution of tellurides as semiconductor detector receive impact.

Utility model content

The purpose of this utility model is to provide a kind of device that detects tellurides as semiconductor detector built in field.

For achieving the above object, the technical scheme that the utility model is taked is: a kind of device that detects tellurides as semiconductor detector built in field, comprise halogen tungsten lamp, 980nm filter plate, lens, tellurides as semiconductor detector, D translation platform, the polarizer, analyzer, object lens and camera, described tellurides as semiconductor detector is disposed across on described D translation platform, described tellurides as semiconductor detector is provided with D.C. voltmeter, described three-dimensional control platform and camera are all connected with computer by data line, described halogen tungsten lamp is provided with switch, described camera is infrared camera.

Described halogen tungsten lamp is low-yield halogen tungsten lamp.

Wherein, described halogen tungsten lamp, 980nm filter plate, tellurides as semiconductor detector, the polarizer, analyzer, without annexation, described object lens are connected with camera.

Wherein, the utility model has been applied Pockels effect (Pockels), Pockels effect (Pockels): birefringent phenomenon occurs polarized light when the optical axis that is in the piezoelectric crystal in external electric field is propagated, and the difference of two principal refractive indexs is directly proportional to external electric field intensity square, and this electrooptical effect is Pockels effect.Its principle is: some crystal is when extra electric field direction is vertical with the incident light direction of propagation, and when applying electric field, electric field, by changing the anisotropic character of crystal, produces induced birefringence.

The utility model, due to birefringent generation, causes the refractive index of light on different direction of vibration different.Because refractive index has determined the velocity of propagation of light in medium, thereby has caused optical path difference to cause phase differential, thereby has changed polarized state of light.The utility model can square being directly proportional according to the built in field intensity of light intensity received on camera and tellurides as semiconductor detector, study the Electric Field Distribution of tellurides as semiconductor detector, further obtain the distribution of space charge, thereby study the defect of tellurides as semiconductor detector inside.

Accompanying drawing explanation

Fig. 1 is structural representation of the present utility model.

Embodiment

In order to make the purpose of this utility model and advantage clearer, below in conjunction with example, the utility model is further elaborated.Should be appreciated that instantiation described herein is only in order to explain the utility model, and be not used in restriction the utility model.

As shown in Figure 1, a kind of device that detects tellurides as semiconductor detector built in field of the present utility model, comprise halogen tungsten lamp 1,980nm filter plate 9, lens 10, tellurides as semiconductor detector 4, D translation platform 5, the polarizer 8, analyzer 6, object lens 2 and camera 7, described tellurides as semiconductor detector 4 is disposed across on described D translation platform 5, described tellurides as semiconductor detector 4 is provided with D.C. voltmeter, described three-dimensional control platform 5 and camera 7 are all connected with computer 3 by data line, described halogen tungsten lamp 1 is provided with switch, and described camera 7 is infrared camera.

Described halogen tungsten lamp is low-yield halogen tungsten lamp.

The principle of this device is: see through the infrared light that infrared fileter produces, after the polarizer, irradiate on the alive tellurides as semiconductor detector in two ends.Allow again subsequently projection light pass through in the vertical analyzer in polarizer polarization direction.Due to the Pockels effect occurring on tellurides as semiconductor detector, the phase function that makes to be positioned at after analyzer receives light.

On camera, the built in field intensity of received light intensity and tellurides as semiconductor detector square is directly proportional.

$I\≈I_0{\left(\frac{\mathrm{\π}{n}_0^3\mathrm{rd}}{\mathrm{\λ}}E\right)}^2\∝E^2$

I ₀the light intensity by the polarizer, n ₀be the refractive index during without electric field action, r is the linear electro-optic coefficient of tellurides as semiconductor detector, and d is the length of tellurides as semiconductor detector on optical propagation direction, and λ is light wavelength, and E is the mean value along built in field in light path.

The direction of vibration of this microscopical polarizer of concrete enforcement and analyzer is mutually orthogonal.Sometimes must determine the direction of vibration of the lower polarizer and analyzer, while therefore operating, must proofread and correct the polarizer and analyzer.

1, generally to check whether quadrature of the polarizer and analyzer crosshair, and whether the polarizer is consistent with analyzer direction of vibration, select cleavage black mica clearly simultaneously, move to the center of eyepiece crosshair, cleavage fissure is parallel to a rhizoid of crosshair, write down the number of division of objective table, rotating objective table makes cleavage fissure be parallel to another crosshair again, write down the number of division of objective table, the difference of two number of divisions is 90 °, and crosshair quadrature is described.

2, the polarizer and analyzer direction of vibration determines and proofreaies and correct

Generally with black mica, check the direction of vibration of the lower polarizer and analyzer, this is because black mica is a kind of widely distributed transparent mineral, at single polarization, there is very strong optical characteristics: first look for cleavage black mica clearly, move to eyepiece center of reticule, release the polarizer, rotate objective table one week, observe the variation of black mica color, because black mica is the strongest to the vibration light absorption of cleavage direction, institute is so that black mica color while reaching the darkest, and the direction of cleavage fissure is exactly the direction of vibration of analyzer.

3, the correction of the polarizer and analyzer quadrature

The correction for direction of the polarizer well after, take off tellurides as semiconductor detector, install analyzer, whether observe the ken in delustring state, if entirely black, show that the direction of vibration of the polarizer and analyzer is mutually orthogonal, otherwise, analyzer must be proofreaied and correct, and rotates analyzer, till making the ken reach the most secretly.During rotation, must first unclamp the stop screw of analyzer, after correction is good, tighten again.

This instantiation is realized and is accurately measured detector internal electric field by quadratic electro-optical effect, first use infrared imaging to obtain the image clearly of tellurides as semiconductor detector, the halogen tungsten lamp of infrared band sends infrared light, by the mating plate that selects of 980nm, at the optical lens that selects through directional light, then see through the polarizer, infrared light is irradiated to detector again, light by detector is collected with infrared camera through the light of analyzer again, and the polarizer and analyzer are at 45 ° and-45 °, detector making alive.

The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.

Claims (2)

1. a device that detects tellurides as semiconductor detector built in field, it is characterized in that, comprise halogen tungsten lamp (1), 980nm filter plate (9), lens (10), tellurides as semiconductor detector (4), D translation platform (5), the polarizer (8), analyzer (6), object lens (2) and camera (7), described tellurides as semiconductor detector (4) is disposed across on described D translation platform (5), described tellurides as semiconductor detector (4) is provided with D.C. voltmeter, described three-dimensional control platform (5) and camera (7) are all connected with computer (3) by data line, described halogen tungsten lamp (1) is provided with switch, described camera (7) is infrared camera.

2. a kind of device that detects tellurides as semiconductor detector built in field according to claim 1, is characterized in that, described halogen tungsten lamp (1) is low-yield halogen tungsten lamp.