CN203813664U - Segmented current source with output decreasing along with increasing of control voltage - Google Patents

Segmented current source with output decreasing along with increasing of control voltage Download PDF

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Publication number
CN203813664U
CN203813664U CN201320755830.6U CN201320755830U CN203813664U CN 203813664 U CN203813664 U CN 203813664U CN 201320755830 U CN201320755830 U CN 201320755830U CN 203813664 U CN203813664 U CN 203813664U
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current
output
voltage
current source
transistor
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不公告发明人
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Suzhou Baker Microelectronics Co Ltd
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Suzhou Baker Microelectronics Co Ltd
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Abstract

The utility model provides a segmented current source with the output decreasing along with the increasing of a control voltage, and the current source comprises an input line which is used for receiving an input voltage; an output line which supplies an output current; a current mirror, wherein an input line of the current mirror is connected to receive an input signal response to the input voltage, and the current mirror comprises a plurality of control lines and an output line; and a plurality of output current control devices, each of which is connected with one of the control lines of the current mirror. When the input voltage reaches a preset level, each output current control device conducts a current from the current mirror, wherein the preset level is related to the output current control devices, thereby affecting the effective current on an output line of the current mirror. The current source also comprises a buffer which is provided with a receiving a line for receiving the input voltage, and an output line of the buffer is connected to the input line of the current mirror.

Description

A kind of output is with controlling the voltage segmented current source declining of rising
Technical field:
The present invention relates to the protection (SOA) of the safety operation area of pressurizer output power transistors.
Background technology:
In technology before, various resist technologies, by known to people, comprise, drive by reducing base stage (or door), carry out resultant current restriction, overvoltage Limiting and junction temperature restriction, thus reduce output transistor conductibility.Place of safety restriction technologies (instead of simpler digital switch resist technology) has a resistance continuously, and this resistance detection offers the voltage of current limit circuit.But when the quiescent current of this circuit is when must being low-down, needed resistance just becomes an inefficient solution.There is the dead band electric current that the resistance of high value more will consume too much integrated circuit.This magnitude of current, adds the electric current that the remainder in current-limiting circuit consumes, and the height of its value allows people be difficult to accept.
Fig. 1 is the schematic diagram of the current source in typical prior art, detects supply voltage V with resistance 11 in.
Fig. 4 is the schematic diagram of the multiplying power limiting circuit 200 in typical prior art.Circuit 200 comprises differential amplifier 230, and it provides the base stage of a control signal to output transistor 205, and this transistor is controlled output voltage V conversely out.Efficient output current on output line 203 is controlled by differential amplifier 230, the input voltage in this output current response application online 201.Transistor 206 is in parallel with output transistor 205, in order to reflect the electric current that flows through output transistor 205.PNP transistor 207 connects as a load, and its a collector electrode 207-1 is connected to its base stage, and is connected to conversely the collector electrode of transistor 206.The collector electrode 207-2 of transistor 207 provides an electric current, and this electric current has reflected the electric current that flows through collector electrode 207-1.The electric current of this mirror image is applied to load 208, and load 208 causes current source 209 reflections to flow through the electric current of transistor 208 conversely.Along with transistor 213 receives its base drive, from the input signal of output line 203, current source 209 is supplied with differential transistor group 213 and 214.(resistance is respectively R to the resistance divider being formed by resistance 210 and 211 2and R 1) be connected to V inline 201 and V outline 203, and provide a voltage to the base stage of differential transistor 214.Transistor 215 serves as load, and it is connected to V inbetween the collector electrode of line 210 and transistor 213.The electric current of transistor load 215 is flow through in transistor 216 reflections, and its collector electrode is connected to the inverting input of differential amplifier 230, and the collector electrode of differential input transistors 214.The normal phase input end of differential amplifier 230 is connected to a bias voltage above Ground, and this bias voltage is provided by bias circuit 204.
A negative feedback loop, comprises amplifier 230, transistor 205 and trsanscondutance amplifier, and this trsanscondutance amplifier is by transistor 209,213, and 214,215 form.Owing to having high loop gain, the voltage on the anti-phase and normal phase input end of amplifier 230 is forced to equate.(resistance is R to resistance 212 3) voltage at two ends, therefore equal offset voltage V offsetthis offset voltage depicts 231 as.
If I xthe output current of trsanscondutance amplifier, then,
Equally, I x = G M V R 2 - - - ( 2 )
Wherein (resistance is R 2)
V t=thermal voltage KT/q; Due to transistor 205,206,207,208 and 209 current mirrors that form, i c209it is the collector current of transistor 209; I outit is the emitter current of transistor 205; N is a suitable factor.Therefore formula (2) becomes
I x = I out 2 N V T × ( V in - V out ) R 2 R 1 + R 2 - - - ( 5 )
This is equated with formula (1), obtain I out ( V in - V out ) K 2 N V T = V offset R a - - - ( 6 )
K = R 2 R 1 + R 2 , Or I out ( V in - V out ) = 2 N V T × V offset KR 3 - - - ( 7 )
Due to I out(V in-V out) equal transistor 205 power consumptions, so the circuit in Fig. 4 provides constant power dissipation.
Unfortunately, the prior art circuit 200 in Fig. 4 is to the tolerance sensitivity of manufacturing, and this is unwelcome, for example, and the intrinsic DC offset voltage V of differential amplifier 230 offset.And prior art circuit 200 needs large resistance resistance 210 and 211 to be connected to V inline 210 and V outbetween line 203, this is difficult to manufacture in an integrated circuit that is used for precision tolerance, and needs a large amount of integrated circuits.
Summary of the invention:
An object of the present invention is to provide an output with V in_ V outthe current source rising and decline.
A further object of the present invention is to provide a current source, and the output current of this current source may be along with various V in_ V outfunction and change.
Another further object of the present invention is, along with V in-V outfunction produce output current, there is the electric current of any absolute value, current source, and there is no large resistance resistance.
According to the present invention, construct a circuit and carry out power-limiting transistor and conduct in its safety operation area (SOA), circuit synthesizes large resistance resistance, and this resistance is an effective current source, its output current is relevant with supply voltage, and its absolute value can be any low value.In order to realize complicated SOA defencive function, SOA circuit resultant current of the present invention, this electric current is the nonlinear function of voltage, and this circuit has a topological structure, the output current that makes current source is permitted multivariable function, such as junction temperature and machine state.
Technical solution of the present invention:
Topological structure of the present invention makes it can be flexibly according to the transfer function that may be synthesized, and the present invention is relevant with a current source, and the electric current and voltage transfer function of this current source can be synthesized various functions, for example linear resistance, nonlinear resistance and negative resistance.Transfer function is the function of the approximate ideal of segmentation, and this function has and produces the as many fragmented blocks of the required precision of transfer function.
The present invention has the generation about electric current conventionally, and this electric current is the piecewise function of controlling voltage.
According to teaching of the present invention, a novel segmented current source is provided, it comprises, produces the device of one or more control voltages, is used for the output current level of control response input voltage.
In a scheme of the present invention, each control signal device comprises feedback device and a summing junction, can carry out so one or more functions, uses control signal as input, and result feedback is to summing junction.In this way, can provide easily a complicated function, be used for controlling the size of output current.
A scheme of the present invention, one or more control signals are provided by one or more saturation current mirrors, limit effective output current.
A scheme of the present invention, saturation current mirror comprises a bipolar transistor, and this transistor has multiple collector electrodes, and one of them is used to provide output current, one or more remaining collector electrode are connected to circuit element, and these elements have the current characteristics relevant with input voltage.In a scheme, these remaining collector electrodes are connected to one or more voltage stabilizing didoes, while to exceed predeterminated level, to provide one by the current path of these collector electrodes, thereby reduce efficient output current in order to rise at input voltage.In a scheme of the present invention, circuit element is connected to these collector electrodes, provide step-length that output current is identical to input voltage transfer function, and in another scheme, these step-lengths is unequal in any ideal configuration.In another scheme of the present invention, collector region changes in different collector electrodes, thereby provides desirable ratio in the step of transfer function.
In another scheme of the present invention, there is the bipolar transistor of multiple collector electrodes to be replaced by several MOS transistor, they have the channel width of ideal ratio, and a desirable transfer function is provided.
The present invention proposes a kind of output with controlling the voltage segmented current source declining of rising, and its current source comprises: for receiving the input line of input voltage; The output line of output current is provided; Current mirror, its input line connects to receive the input signal of the described input voltage of response, multiple control lines and an output line; Several output current control device, each is connected respectively to one of control line of described current mirror, in the time that input voltage reaches predeterminated level, each output current control device conducts the electric current from current mirror, this predeterminated level is relevant with output current control device, thereby, affect the effective current on the output line of described current mirror; Buffer, it has an input line that receives input voltage, and its output line is connected to the input line of current mirror.
Further, described current mirror comprises a current source transistor, and this transistor comprises: a base stage; An emitter, the input line of serving as current mirror; The first collector electrode, is connected to base stage and the second current source; The second collector electrode, serves as the output line of described current mirror; Several extra collector electrodes, serve as multiple control lines of current mirror; Further comprise a coupled transistor, its base stage is used for receiving output voltage, and collector electrode is connected to the base stage of current source transistor, and emitter is connected to the second current source; Current source further comprises one or more extra current sources, is connected to the base stage of described current source transistor, and wherein, selected output current control device is connected to selected current source.
Further, above-mentioned current source further comprises voltage conversion device, and this device is at least relevant with some current sources, and like this, output current control device is just connected to relevant current source, is accompanied by predetermined voltage conversion; Voltage conversion device comprises diode; Above-mentioned current source further comprises one or more extra transistors, and the collector electrode of each is connected to the collector electrode of described coupled transistor, and base stage is connected to the base stage of coupled transistor, and emitter is connected to relevant additional current source.
Further, wherein the emitter of at least a portion extra transistor is connected to correlated current source by voltage conversion device; Voltage conversion device comprises one or more diodes.
Further, output current control device is connected between the collector electrode and the second current source in relevant several extra collector electrode; Output current control device comprises voltage stabilizing didoe; Output current control device comprises multiple voltage stabilizing didoes of series connection, and one end of series diode is connected to the second current source, and the intermediate node of the other end and series diode is connected respectively in multiple extra collector electrodes; Described voltage stabilizing didoe has approximately equalised Zener breakdown voltage; Several extra collector electrodes have approximately equalised current capacity; Several extra collector electrodes have unequal current capacity.
Contrast patent documentation: CN201199747Y CCFL drive current segmentation current stabilization circuit 200820091731.1
Brief description of the drawings:
Fig. 1 is the schematic diagram in exemplary currents source in prior art;
Fig. 2 has described the curve of circuit working in Fig. 1;
Schematic diagram in Fig. 3 has been described the current-limiting circuit of prior art, when with Fig. 1 in current source use time, this current-limiting circuit has limited the power consumption of passage elements;
Schematic diagram in Fig. 4 has been described the multiplying power limiting circuit in prior art;
Fig. 5 a is the schematic diagram of a scheme of current source, and this current source is constructed according to the present invention's teaching, has used the bipolar transistor with multiple collector electrodes;
Fig. 5 b is the figure line of having described circuit transfer function in Fig. 5 a;
Fig. 6 is the schematic diagram of a scheme of current source, and this current source is constructed according to teaching of the present invention, has used a saturation current mirror;
Fig. 7 a is the schematic diagram of another current source, and this current source is constructed according to teaching of the present invention, has used a bipolar transistor that has multiple collector electrodes;
Fig. 7 b is the figure line of the transfer function of depiction 7a circuit;
Fig. 8 is the schematic diagram of current source the first string, and this current source is constructed according to teaching of the present invention, has used several MOS transistor;
Fig. 9 is the schematic diagram of a possibility of current source, and this current source is constructed according to teaching of the present invention, has used bipolar transistor.
Embodiment:
Object of the present invention reaches in a scheme of the present invention, is described as the circuit 600 in Fig. 5 a, and this circuit working is as the curve below with reference in Fig. 5 b.Work as V inthat a high voltage (exceedes V out-V be+ 7V+7V ≈ 20V), multicollector lateral PNP transistor 604 all collector electrode work from 606-1 to 606-4 is also conducted electricity (similarly,, if collector electrode 606-1 mates to 606-4, result is too).Because collector electrode 606-1 is provided to 606-4 by the electric current I being provided by current source 603, I/3 flows through transistor 602 by collector electrode 606-4, and I/3 flows through collector electrode 606-3, and I/3 flows through collector electrode 606-2.Therefore I/3 flows through resistance 607 from collector electrode 606-1, and for simplicity, what show here is ground.Along with V inreduce, first is saturated for collector electrode 606-2, and the electric current being conducted by collector electrode 606-2 drops to 0.Ignore collector electrode 606-2 this controllable impact of Neighbor Set electrode transmitting minority carrier to it, now, I/2 flows through transistor 602 from collector electrode 606-4, and I/2 flows through collector electrode 606-3, and I/2 flows through collector electrode 606-1 as output current.This causes output voltage to rise, as shown in the point 609 on the figure line in Fig. 5 b.Along with V infurther reduce, saturated and its electric current of collector electrode 606-3 drops to 0.There is no now feedback current, circuit is in operate in open loop state, and transistor 602 conducts the electric current I from collector electrode 606-4, and I is as output current in collector electrode 606-1 conduction.Output voltage further rises, as shown in the point 610 on figure line in Fig. 5 b.
At a scheme, V inbe 5V, be applied to the V of the base stage of transistor 602 outfixing 2.5V, for convenience's sake, and in order to make circuit 600, along with V inwhile being low to moderate about 2.5V, still can work.The relative width of transistor 604 each collector electrode is out selected, and the transfer function of expectation is provided.For example, the transfer function of set of matches electrode in circuit 600, as shown in Figure 5 b, at low V inunder, allow larger power consumption, wherein power transistor can consume more power (power transistor do not show, but usually used as the part of pressurizer integrated circuit, this integrated circuit is controlled voltage V controlcontrol).
A scheme, four independent transistors, their emitter links together, and base stage is joined together to form transistor 604.The base width relevant with collector electrode 606-1, than wider to the relevant base width of 606-4 with collector electrode 606-2, in order to reduce the big or small impact to 606-4 with respect to collector electrode 606-2 of the size of collector electrode 606-1, and increases output resistance.A scheme, the minority carrier of saturated set electrode transmitting, the collector electrode 606-1 and the 606-4 that are conventionally worked collect, and transistor 604 comprises P type guard ring, makes this collecting amount minimum.
Fig. 6 is the schematic diagram of another scheme of the present invention.Circuit 500 comprises differential amplifier 510, and it receives input voltage V at its normal phase input end in.Its inverting input is connected to its output, and output is connected to saturation current mirror 504 conversely.Saturation current mirror 504 comprises that some output line 504-1 are to 504-N, and these lines are connected respectively to some voltage source V 1to V n.These voltage sources are used for respectively to I 1to I nprovide current path, because input voltage V inexceed respectively V 1to V 2voltage levvl, thereby cause output current I outalong with input voltage V inincrease and reduce.By using the voltage V of several groups of required desirable amount 1to V noutput current function can arrive required precision arbitrarily by abbreviation, as V infunction such.For example,, for voltage V 1to V nbetween have very little step-length, response input voltage V inthe step-length of output current will be very little.If desirable, voltage V 1to V nbetween step-length equate, although they needn't equate.
Circuit 500 also comprises differential amplifier 501, and it receives a bias voltage V at its normal phase input end bias, its output driving transistors 502, in order to provide output current I out.Certainly the voltage that, is applied to transistor 502 by saturation current mirror 504 is by magnitude of current I 1to I nset up, just as by voltage V 1to V nset up respectively.
Fig. 7 a is the schematic diagram according to another circuit of teaching structure of the present invention.According to the figure line of the output current showing in Fig. 7 b and input voltage, in Fig. 7 a, the work of circuit is with regard to fine understanding.Suppose that PNP transistor 704 saturation voltages are 0.1V, the voltage between Base-Emitter is reduced to 0.7v forward bias, voltage-stabiliser tube voltage 7V.Then voltage stabilizing didoe 709 to 712 is according to following situation conduction, and (a) all voltage stabilizing didoes 709 all conduct to 712: V in>=V out+ 0.1V+ (2 × 7V)+(5 × 0.7V)=V out+ 17.6V, i.e. V in-V out>=17.6V,
(b) for 17.6V > V in-V out>=14.1V, voltage-stabiliser tube 710 disconnects.
(c) for 14.1V > V in-V out>=10.6V, voltage-stabiliser tube 710 and 712 disconnects.
(d) for 10.6V > V in-V out>=7.1V, voltage-stabiliser tube 709,710 and 712 disconnects.
(e) for 7.1V > V in-V phdout, all voltage-stabiliser tubes 709 all disconnect to 712.
Condition (a) I=5I x
I x=I/5
(b)I=4I x
I x=I/4
?
(c)I x=I/3
(d)I x=I/2
(e)I x=I;
Wherein I xThe each collector current of=PNP transistor 704
As shown in Fig. 7 b, on line 708, available output current has a step function, is equivalent to the quantity of the voltage-stabiliser tube 709 to 712 of conducting.Along with very low V in-V out, all voltage-stabiliser tubes 709 to 712 are all not conductings, resistance 707 two ends obtain maximum voltage (therefore having maximum output current).At about V in-V outwhen=7.1V, voltage-stabiliser tube 711 starts conduction, thereby reduces the voltage at resistance 707 two ends.Second of the voltage at resistance 704 two ends stepwise reduces and occurs in V in-V outrise to and approach 10.6V, in the time that voltage-stabiliser tube 709 starts to conduct.Other staged reduction occurs in respectively V in-V outrise to and approach 14.6V and 16.6V, in the time that voltage-stabiliser tube 712 and 710 starts to conduct.
The schematic diagram of another scheme of Fig. 8 the present invention, this scheme has been used MOS transistor instead of bipolar transistor, and in order to make voltage-stabiliser tube 809 to 812, conduction current flows through respectively related resistors 819 to 822, causes output current I outalong with input voltage V outrising and stepwise decline.The scheme of describing for schematic diagram in Fig. 8, makes I xequal the electric current of the P channel MOS transistor that flows through suitable size.(a) for V in-V out<7V+V gs, all voltage-stabiliser tubes 809 all disconnect to 812, and I x=I in(b) for 7V≤V in-V out-V gs< 14V, only has voltage-stabiliser tube 812 conductings, I in=2I xso, I x=I in/ 2 (c) are for 14V≤V in-V out-V gs< 21V, voltage-stabiliser tube 812 and 811 conducting, therefore I x=I in/ 3 (d) are for 21V≤V in-V out-V gs< 28V, voltage-stabiliser tube 810,811 and 812 conducting, therefore I x=I in/ 4 (e) are for 28V+V gs< V in-V out, all voltage-stabiliser tube 809 to 812 all conductings, I in=3I x+ 4I x, I x=I in/ 7, in all cases, I=12I x.
In a scheme of the present invention, for example scheme of Fig. 7 a, collector electrode 706-1 is expanded by desirable magnitude relationship to the area size of 706-6, in order to make step-length and output current unequal.For example, a collector electrode has the region that doubles another collector electrode, and this can be also twice in the impact that reduces efficient output current.In another scheme of the present invention, the scheme of for example Fig. 8, in order to have similar impact, the channel width of transistor 819 to 822 has been expanded.
Fig. 9 is the schematic diagram of a possibility of the current source of constructing according to teaching of the present invention, in Fig. 5 a, describe similar.The scheme showing in Fig. 9 is used reference number, similar with the reference number using about the scheme of discussing in Fig. 5 a.The scheme of Fig. 9 comprises an extra current source 603-2, and this current source is connected to the base stage of current source transistor 604 by transistor 602-2, and transistor 602-2 is in parallel with transistor 602-1 in fact, and transistor 602-1 is relevant with current source 603-1.The emitter of transistor 602-2 is connected to current source 603-2 by diode 690, and diode 690 serves as a voltage transfer device.Alternatively, a forward biased diode can be used as diode 690.The emitter of transistor 602-2 is also connected to the collector electrode 606-4 of transistor 604 by voltage transfer device 691.The collector electrode 606-5 of transistor 604 is connected to its base stage and the collector electrode of transistor 602-1 and 602-2.

Claims (5)

1. output, with controlling the voltage segmented current source declining of rising, is characterized in that: current source comprises: for receiving the input line of input voltage; The output line of output current is provided; Current mirror, its input line connects to receive the input signal of the described input voltage of response, multiple control lines and an output line; Several output current control device, each is connected respectively to one of control line of described current mirror, in the time that input voltage reaches predeterminated level, each output current control device conducts the electric current from current mirror, this predeterminated level is relevant with output current control device, thereby, affect the effective current on the output line of described current mirror; Buffer, it has an input line that receives input voltage, and its output line is connected to the input line of current mirror.
2. a kind of output according to claim 1, with controlling the voltage segmented current source declining of rising, is characterized in that: described current mirror comprises a current source transistor, and this transistor comprises: a base stage; An emitter, the input line of serving as current mirror; The first collector electrode, is connected to base stage and the second current source; The second collector electrode, serves as the output line of described current mirror; Several extra collector electrodes, serve as multiple control lines of current mirror; Further comprise a coupled transistor, its base stage is used for receiving output voltage, and collector electrode is connected to the base stage of current source transistor, and emitter is connected to the second current source; Current source further comprises one or more extra current sources, is connected to the base stage of described current source transistor, and wherein, selected output current control device is connected to selected current source.
3. a kind of output according to claim 2 is with controlling the voltage segmented current source declining of rising, it is characterized in that: above-mentioned current source further comprises voltage conversion device, this device is at least relevant with some current sources, like this, output current control device is just connected to relevant current source, is accompanied by predetermined voltage conversion; Voltage conversion device comprises diode; Above-mentioned current source further comprises one or more extra transistors, and the collector electrode of each is connected to the collector electrode of described coupled transistor, and base stage is connected to the base stage of coupled transistor, and emitter is connected to relevant additional current source.
4. a kind of output according to claim 3, with controlling the voltage segmented current source declining of rising, is characterized in that: wherein the emitter of at least a portion extra transistor is connected to correlated current source by voltage conversion device; Voltage conversion device comprises one or more diodes.
5. a kind of output according to claim 2, with controlling the voltage segmented current source declining of rising, is characterized in that: output current control device is connected between the collector electrode and the second current source in relevant several extra collector electrode; Output current control device comprises voltage stabilizing didoe; Output current control device comprises multiple voltage stabilizing didoes of series connection, and one end of series diode is connected to the second current source, and the intermediate node of the other end and series diode is connected respectively in multiple extra collector electrodes; Described voltage stabilizing didoe has approximately equalised Zener breakdown voltage; Several extra collector electrodes have approximately equalised current capacity; Several extra collector electrodes have unequal current capacity.
CN201320755830.6U 2013-11-26 2013-11-26 Segmented current source with output decreasing along with increasing of control voltage Expired - Lifetime CN203813664U (en)

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