CN203798771U - Human-body blood sugar testing chip based on gallium nitride material - Google Patents
Human-body blood sugar testing chip based on gallium nitride material Download PDFInfo
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- CN203798771U CN203798771U CN201420022740.0U CN201420022740U CN203798771U CN 203798771 U CN203798771 U CN 203798771U CN 201420022740 U CN201420022740 U CN 201420022740U CN 203798771 U CN203798771 U CN 203798771U
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Abstract
The utility model relates to a human-body blood sugar testing chip based on a gallium nitride material, which comprises a substrate and is characterized in that a U-shaped gallium nitride layer grows on the upper surface of the substrate; an aluminium, gallium and nitrogen layer grows on the upper surface of the U-shaped gallium nitride layer; a U-shaped gallium nitride cladding layer grows on the upper surface of the aluminium, gallium and nitrogen layer; a source electrode and a drain electrode are arranged on the U-shaped gallium nitride cladding layer; the source electrode, the drain electrode and the U-shaped gallium nitride cladding layer are in ohmic contact; the source electrode and the drain electrode are separated from each other; a grid electrode is in the clearance between the source electrode and the drain electrode; a source lineup electrode and a drain lineup electrode are respectively deposited on the source electrode and the drain electrode; an insulation layer is covered on the upper surface of the chip; the region on the upper surface of the chip, except the source lineup electrode, the drain lineup electrode and the grid electrode, is covered by the insulation layer; and biological enzyme is coated on the surface of the grid electrode. According to the utility model, by utilizing the amplification effect of a high electron mobility transistor (HEMT), the amount of electrons generated when glucose is reacted is detected more precisely, and therefore, the human-body blood sugar concentration is obtained.
Description
Technical field
The utility model relates to a kind of blood sugar for human body test chip, and especially a kind of blood sugar for human body test chip based on gallium nitride material, belongs to electronic technology field.
Background technology
Blood sugar for human body value is a kind of conventional and important health index, and especially in recent years along with the raising of people's living standard, the people that suffer from diabetes are more and more, and the family oriented of blood sugar monitoring also seems more and more important with routinizing.Because blood sugar for human body mainly refers to glucose, so the detection of blood sugar for human body refers to the concentration of contained glucose in human body blood.At present common blood sugar for human body testing tool is mainly the reaction that receiving and losing electrons occurs under the effect of biology enzyme by glucose on the market, the electronics producing is transferred to electrode by conducting medium, under certain voltage effect, the electric current that flows through electrode will change, and the linear relationship that detects curent change and concentration of glucose by a kind of three-electrode system reaches the object that detects blood sugar concentration.But the micro-electric current producing in this process is minimum, need to survey with 12 bit A/D converters, this has no small impact to its measuring accuracy and accuracy.
As everyone knows, High Electron Mobility Transistor (HEMT) is a kind of electron device extremely responsive to grid voltage.Grid voltage Vg can control the degree of depth of below heterojunction potential well, can control 2-DEG(two-dimensional electron gas in potential well) surface density, thereby controlling the working current of device.
Can there is oxidation reaction in the glucose in blood of human body, form glucose lipid and hydrogen peroxide (H under the effect of biology enzyme
2o
2), in process, can discharge electronics.This electronics can form an electric field in the grid place accumulation of HEMT device, and this electric field can be superimposed upon on the electric field that grid voltage produces, the degree of depth of joint effect below heterojunction potential well, thus cause the variation of device operation current.Under this system, HEMT device operation current and concentration of glucose are linear, so we can record the concentration of glucose in blood of human body by measuring the variation of HEMT device operation current.And thickness, the design of HEMT device etc. of the material of the mobility of electronics, formation heterojunction all can directly have influence on the response of working current for electric field change in heterojunction, the sensitivity of device and accuracy are based on these factors.By optimizing these parameters, we can obtain with respect to the more testing result of high sensitivity and accuracy of three-electrode system.This will give the credit to high mobility charge carrier in the HEMT device channel high susceptibility for grid electric field change, thus can be sensitiveer detect the electronics discharging in glucose response.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of blood sugar for human body test chip based on gallium nitride material is provided, utilize the enlarge-effect of High Electron Mobility Transistor (HEMT), more accurately detecting glucose when reaction the electronics that produces number, and then obtain human blood glucose concentration.
The technical scheme providing according to the utility model, the described blood sugar for human body test chip based on gallium nitride material, comprise substrate, it is characterized in that: the upper surface growth at described substrate forms U-shaped gallium nitride layer, the growth of U-shaped gallium nitride layer upper surface forms gallium aluminium nitrogen layer, the gallium aluminium nitrogen layer upper surface U-shaped gallium nitride coating layer of growing; Described U-shaped gallium nitride coating layer is provided with source electrode and drain electrode, and source electrode and drain electrode and U-shaped gallium nitride coating layer form Ohmic contact; Described source electrode and drain electrode are separated from each other, and the gap location between source electrode and drain electrode is grid, deposit respectively source electrode routing electrode and drain electrode routing electrode in source electrode and drain electrode; Cover insulation course at described chip upper surface, insulation course covers the region of chip upper surface except source electrode routing electrode, drain electrode routing electrode and grid; At the surface-coated biology enzyme of described grid.
In an embodiment, at the upper surface of described chip, the part beyond source electrode, drain and gate region forms etching groove, and etching groove extends to U-shaped gallium nitride layer by the upper surface of U-shaped gallium nitride coating layer.
In an embodiment, described substrate adopts the one in sapphire substrate, silicon substrate, gallium nitride base board or silicon carbide substrate.
In an embodiment, the thickness≤100nm of described gallium aluminium nitrogen layer.
In an embodiment, the thickness≤50nm of described U-shaped gallium nitride coating layer.
The utlity model has following advantage: the utility model utilizes electric current in the HEMT device channel sensitivity characteristic to grid electric field, can obtain the linear relationship of its electric current with grid electric field change; And the variation of grid electric field is proportional to the electronics producing in glucose response, the electronics that reaction produces is proportional to again the concentration of glucose, thereby can utilize the curent change of HEMT device to read the concentration of glucose; By the adjustment of each layer thickness in grid length, width and epitaxial structure in HEMT device, can change the curent change value of device, make under identical concentration of glucose, HEMT curent change reaches the magnitude of tens microamperes, thereby greatly increase feasibility and the accuracy of reading out data, needn't use high-precision electronic chip to read minimum electric current, reduce chip manufacturing cost, improve measuring accuracy.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of embodiment of blood sugar for human body test chip described in the utility model.
Fig. 2 is the structural representation of the another kind of embodiment of blood sugar for human body test chip described in the utility model.
Embodiment
Below in conjunction with concrete accompanying drawing, the utility model is described in further detail.
As shown in Fig. 1～Fig. 2: as described in blood sugar for human body test chip based on gallium nitride material comprise substrate 1, U-shaped gallium nitride layer 2, gallium aluminium nitrogen layer 3, U-shaped gallium nitride coating layer 4, source electrode 5, drain electrode 6, source electrode routing electrode 7, drain electrode routing electrode 8, grid 9, insulation course 10, biology enzyme coating 11 etc.
Embodiment mono-:
As shown in Figure 1, the utility model comprises substrate 1, substrate 1 adopts the one in sapphire substrate, silicon substrate, gallium nitride base board or silicon carbide substrate, the upper surface of substrate 1 forms U-shaped gallium nitride layer 2 by epitaxial growth, U-shaped gallium nitride layer 2 upper surface growths form N-type or U-shaped gallium aluminium nitrogen layer 3, and the 3 upper surface growths of gallium aluminium nitrogen layer have the U-shaped gallium nitride coating layer 4 of skim; Described U-shaped gallium nitride coating layer 4 is provided with source electrode 5 and drain electrode 6, and source electrode 5 and drain electrode 6 are covered on U-shaped gallium nitride coating layer 4, and form Ohmic contact with U-shaped gallium nitride coating layer 4; Described source electrode 5 and drain electrode 6 are separated from each other, and the gap location between source electrode 5 and drain electrode 6 is grid 9; In described source electrode 5 and drain electrode 6, deposit respectively source electrode routing electrode 7 and drain electrode routing electrode 8, as later packaging and routing dish; Part except described source electrode routing electrode 7, drain electrode routing electrode 8 and grid 9 covers insulation course 10, and the surface-coated of grid 9 has the biology enzyme 11 of energy catalysis glucose response;
Thickness≤the 100nm of described gallium aluminium nitrogen layer 3; Thickness≤the 50nm of described U-shaped gallium nitride coating layer 4;
The material of described insulation course 10 is monox, silicon nitride or resene polymkeric substance etc., to ensure that leakage the two poles of the earth in source cannot be communicated with in solution;
The material of described source electrode 5 and drain electrode 6 is Ti/Al or the alloy that contains Ti/Al component; The catalyzing enzyme that described biology enzyme 11 can make glucose generation receiving and losing electrons react for glucose oxidase or glucose dehydrogenase etc.
Embodiment bis-:
In order to improve further the response of chip for concentration of glucose, reduce background noise, can remove the GaN layer except source electrode 5, grid 9 and drain electrode 6 are sentenced by the method for plasma etching (ICP), remove the degree of depth and need arrive U-shaped gallium nitride layer 2, do like this and can make charge carrier form loop by the raceway groove below grid, and cannot detour by edge, because the raceway groove below grid is subject to grid Electric Field Modulated, therefore can react sensitiveer and accurately the variation of grid electric field, thereby record the concentration of glucose.
As shown in Figure 2: the described blood sugar for human body test chip based on gallium nitride material comprises substrate 1, substrate 1 adopts sapphire substrate, silicon substrate, gallium nitride base board or silicon carbide substrate one wherein, substrate 1 upper surface forms U-shaped gallium nitride layer 2 by epitaxial growth, U-shaped gallium nitride layer 2 upper surface growths form N-type or U-shaped gallium aluminium nitrogen layer 3, and the 3 upper surface growths of gallium aluminium nitrogen layer have the U-shaped gallium nitride coating layer 4 of skim; Described U-shaped gallium nitride coating layer 4 upper surfaces are provided with source electrode 5 and drain electrode 6, source electrode 5 and drain electrode 6 are covered on U-shaped gallium nitride coating layer 4, and form Ohmic contact with U-shaped gallium nitride coating layer 4, and source electrode 5 and drain electrode 6 are separated from each other, and the gap between source electrode 5 and drain electrode 6 is grid 9; By plasma etching (ICP) method by described source electrode 5, drain electrode 6 and grid 9 regions beyond partially-etched fall, until arrive U-shaped gallium nitride layer 2; In institute's source electrode 5 and drain electrode 6, deposit respectively source electrode routing electrode 7 and drain electrode routing electrode 8, as later packaging and routing dish; Part except described source electrode routing electrode 7, drain electrode routing electrode 8 and grid 9 is coated with insulation course 10, and the surface-coated of grid 9 has the biology enzyme 11 of energy catalysis glucose response;
Thickness≤the 100nm of described gallium aluminium nitrogen layer 3; Thickness≤the 50nm of described U-shaped gallium nitride coating layer 4;
The material of described insulation course 10 is monox, silicon nitride or resene polymkeric substance etc., to ensure that leakage the two poles of the earth in source cannot be communicated with in solution;
The material of described source electrode 5 and drain electrode 6 is Ti/Al or the alloy that contains Ti/Al component; The catalyzing enzyme that described biology enzyme 11 can make glucose generation receiving and losing electrons react for glucose oxidase or glucose dehydrogenase etc.
Compared to existing blood sugar test instrument on the market, blood sugar for human body test chip described in the utility model is sensitiveer and accurate, and it is simple and compact for structure, test sensitive and accurate, lower for the requirement of backstage circuit, thus have cheaper cost, reliable and stable.
Claims (5)
1. the blood sugar for human body test chip based on gallium nitride material, comprise substrate (1), it is characterized in that: the upper surface growth at described substrate (1) forms U-shaped gallium nitride layer (2), U-shaped gallium nitride layer (2) upper surface growth forms gallium aluminium nitrogen layer (3), gallium aluminium nitrogen layer (3) the upper surface U-shaped gallium nitride coating layer (4) of growing; Described U-shaped gallium nitride coating layer (4) is provided with source electrode (5) and drain electrode (6), and source electrode (5) and drain electrode (6) form Ohmic contact with U-shaped gallium nitride coating layer (4); Described source electrode (5) and drain electrode (6) are separated from each other, and the gap location between source electrode (5) and drain electrode (6) is grid (9), deposit respectively source electrode routing electrode (7) and drain electrode routing electrode (8) in source electrode (5) and drain electrode (6); Cover insulation course (10) at described chip upper surface, insulation course (10) covers the region of chip upper surface except source electrode routing electrode (7), drain electrode routing electrode (8) and grid (9); At the surface-coated biology enzyme (11) of described grid (9).
2. the blood sugar for human body test chip based on gallium nitride material as claimed in claim 1, it is characterized in that: at the upper surface of described chip, part beyond source electrode (5), drain electrode (6) and grid (9) region forms etching groove, and etching groove extends to U-shaped gallium nitride layer (2) by the upper surface of U-shaped gallium nitride coating layer (4).
3. the blood sugar for human body test chip based on gallium nitride material as claimed in claim 1 or 2, is characterized in that: described substrate (1) adopts the one in sapphire substrate, silicon substrate, gallium nitride base board or silicon carbide substrate.
4. the blood sugar for human body test chip based on gallium nitride material as claimed in claim 1 or 2, is characterized in that: the thickness≤100nm of described gallium aluminium nitrogen layer (3).
5. the blood sugar for human body test chip based on gallium nitride material as claimed in claim 1 or 2, is characterized in that: the thickness≤50nm of described U-shaped gallium nitride coating layer (4).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420022740.0U CN203798771U (en) | 2014-01-14 | 2014-01-14 | Human-body blood sugar testing chip based on gallium nitride material |
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| CN201420022740.0U CN203798771U (en) | 2014-01-14 | 2014-01-14 | Human-body blood sugar testing chip based on gallium nitride material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103760206A (en) * | 2014-01-14 | 2014-04-30 | 江苏新广联科技股份有限公司 | Blood glucose test chip based on gallium nitride material |
| CN105424780A (en) * | 2015-11-26 | 2016-03-23 | 北京代尔夫特电子科技有限公司 | Gallium nitride sensor, preparation method and multi-sensor system |
| WO2018094780A1 (en) * | 2016-11-25 | 2018-05-31 | 深圳大学 | Noninvasive blood glucose measurement test strip and manufacturing method therefor |
-
2014
- 2014-01-14 CN CN201420022740.0U patent/CN203798771U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103760206A (en) * | 2014-01-14 | 2014-04-30 | 江苏新广联科技股份有限公司 | Blood glucose test chip based on gallium nitride material |
| CN103760206B (en) * | 2014-01-14 | 2016-07-06 | 江苏新广联科技股份有限公司 | Blood glucose test chip based on gallium nitride material |
| CN105424780A (en) * | 2015-11-26 | 2016-03-23 | 北京代尔夫特电子科技有限公司 | Gallium nitride sensor, preparation method and multi-sensor system |
| WO2017088560A1 (en) * | 2015-11-26 | 2017-06-01 | 北京代尔夫特电子科技有限公司 | Sensor, preparation method and multi-sensor system |
| CN105424780B (en) * | 2015-11-26 | 2018-06-22 | 深圳代尔夫特电子科技有限公司 | A kind of gallium nitride sensor, preparation method and multisensor syste |
| WO2018094780A1 (en) * | 2016-11-25 | 2018-05-31 | 深圳大学 | Noninvasive blood glucose measurement test strip and manufacturing method therefor |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140827 Termination date: 20170114 |