CN203782275U - Overflow protection substrate plate of polycrystalline silicon ingot furnace - Google Patents

Abstract

The utility model discloses an overflow protection substrate plate of a polycrystalline silicon ingot furnace, solving the problem that ingot furnaces are easy to explode due to overflow of liquid silicon in existing polycrystalline silicon production processes. The overflow protection substrate plate is characterized in that an overflow protection substrate plate (1) is arranged on overflow cotton (7) arranged on the bottom surface of a lower polycrystalline silicon ingot furnace body (6); a thermocouple passing pipe (2) and crucible table pillar passing pipes (3) are respectively arranged on the bottom surface of the overflow protection substrate plate (1); windmill blade-shaped spiral guide plates (4) and ring-shaped guide plates (5) are respectively arranged on the overflow protection substrate plate fixedly; a graphite platform (10) for placing crucibles is arranged at the top ends of crucible table pillars (8) passing through the crucible table pillar passing pipes (3); a powdery silicon material layer (11), a granular silicon material layer (12) and a blocky silicon material layer (13) are arranged at the bottom of the overflow protection substrate plate (1). The overflow protection substrate plate achieves absorption and curing of overflowing liquid silicon and ensures the safety of the production process.

Description

The overflow protection substrate disc of polycrystalline silicon ingot or purifying furnace

Technical field

The utility model relates to a kind of polycrystalline silicon ingot or purifying furnace, particularly the anti-overflow substrate disc in a kind of lower furnace body that is arranged on polycrystalline silicon ingot or purifying furnace.

Background technology

At present, in polycrystalline silicon ingot casting process, generally use ceramic quartz crucible, silicon material is put in ceramic quartz crucible, more ceramic quartz crucible is put in polycrystalline silicon ingot or purifying furnace, make the fusing of silicon material by heating.Because quartz crucible usually can exist manufacturing defect or hidden the splitting in inside causing of colliding with in production, carrying, charging process; this hidden splitting by common means is difficult to be checked through; in heat-processed; when after the fusing of silicon material; high-temperature liquid state silicon will flow out from defective crucible gap; because liquid-state silicon has good mobility, can flow to very soon ingot casting bottom of furnace body.Because body of heater is double layer jacket structure, in chuck, be connected with water coolant, bottom of furnace body has weld seam interface simultaneously, the high-temperature liquid state silicon material of overflow and the furnace wall of low temperature there will be the phenomenon of high/low-temperature impact, make weld cracking, now the water coolant in chuck will flow in furnace chamber, meeting instant vaporization after the water coolant of inflow contacts with the silicon liquid of high temperature, make the huge increasing of furnace pressure moment, easily cause ingot furnace blast.In addition, because current pouring hall is the large mode of production, tens ingot furnaces are equipped with in a workshop, once a generation problem, in order to ensure production safety, other ingot furnaces also must be forced into utmost point cold state, cause the very big financial loss of production.Through investigation, in the industry, the average weir loading of ingot furnace is between 3 ‰-5 ‰, and so high weir loading has brought great potential safety hazard to production unit and operator.

Summary of the invention

The utility model provides a kind of anti-overflow substrate disc of polycrystalline silicon ingot or purifying furnace, has solved the existing technical problem that easily causes ingot furnace blast in polysilicon production process due to the overflow of liquid-state silicon.

The utility model is to solve by the following technical programs above technical problem:

A kind of anti-overflow substrate disc of polycrystalline silicon ingot or purifying furnace, comprise circular or oval-shaped anti-overflow substrate disc, on the bottom surface of anti-overflow substrate disc, be respectively arranged with thermocouple and pass through pipe by pipe and crucible platform pillar, in anti-overflow substrate disc, be fixedly installed respectively the spirrillum flow deflector and the ring diversion plate that are air vane shape.

In anti-overflow substrate disc, be uniformly-spaced provided with four spirrillum flow deflectors that are air vane shape radian, be the head of spirrillum flow deflector of air vane shape together with ring diversion plate cross-under.

The utility model, by furnace bottom installing substrate disc, has been realized the absorption to overflow liquid-state silicon and has solidified, and has ensured the safety of production process.

Brief description of the drawings

Fig. 1 is structural representation of the present utility model;

Fig. 2 is that the utility model is placed into the structural representation in ingot furnace;

Fig. 3 is the structural representation of the overflow warning of the ingot furnace at the utility model place.

Embodiment

Below in conjunction with accompanying drawing, the utility model is elaborated:

A kind of polycrystalline silicon ingot or purifying furnace with anti-overflow function, comprise polycrystalline silicon ingot or purifying furnace lower furnace body 6, on the bottom surface of polycrystalline silicon ingot or purifying furnace lower furnace body 6, be provided with overflow cotton 7, in the bottom surface of polycrystalline silicon ingot or purifying furnace lower furnace body 6, central authorities are provided with crucible thermocouple 9, on the bottom surface of the polycrystalline silicon ingot or purifying furnace lower furnace body 6 in the outside of crucible thermocouple 9, be provided with crucible platform pillar 8, on the overflow cotton 7 arranging, be provided with anti-overflow substrate disc 1 on the bottom surface of polycrystalline silicon ingot or purifying furnace lower furnace body 6, on the bottom surface of anti-overflow substrate disc 1, be respectively arranged with thermocouple and pass through pipe 3 by pipe 2 and crucible platform pillar, in anti-overflow substrate disc 1, be fixedly installed respectively the spirrillum flow deflector 4 and the ring diversion plate 5 that are air vane shape, be provided with by managing the top of the 3 crucible platform pillars 8 that pass the Graphite platform 10 of placing crucible from crucible platform pillar, be provided with the Powdered silicon bed of material 11 in the bottom of anti-overflow substrate disc 1, on the Powdered silicon bed of material 11, be provided with the particulate Si bed of material 12, on the particulate Si bed of material 12, be provided with the bulk silicon bed of material 13.

On the end face of the bulk silicon bed of material 13, be provided with thermocouple and lay square frame 14, lay in square frame 14 and be laid with thermocouple 15 in thermocouple, thermocouple 15 is electrically connected with overtemperature alarm 16.

The present invention is the lower furnace chamber inside at existing ingot furnace, retain original one deck overflow cotton, on overflow cotton, place anti-overflow substrate disc 1, in anti-overflow substrate disc 1, first lay again the Powdered silicon bed of material 11, then lay the particulate Si bed of material 12, lay the bulk silicon bed of material 13 topmost, realize cooling and absorbing and the buffer action of high temperature silicon liquid.The spirrillum flow deflector 4 being fixedly installed in anti-overflow substrate disc 1 and ring diversion plate 5 are to play to extend liquid-state silicon and flow through the object in path, avoid liquid-state silicon under action of gravity, flow directly to end socket bottom, prevent that heat is too much gathered in a place.The risk of explosion of bringing in order to reduce overflow, the thermal capacity of silicon material of laying in anti-overflow substrate disc 1 is larger, and relatively high ideal of fusing point considered the recycling of silicon material simultaneously, is that cold load body is ideal so select silicon material.From crucible gap, first the liquid-state silicon of overflow flows on spirrillum flow deflector 4 and ring diversion plate 5, then flow in the silicon material of laying in anti-overflow substrate disc 1, because silicon material is low-temperature receiver with respect to liquid-state silicon, liquid-state silicon freezes immediately, in the time that spillway discharge is larger, by the mode of layering laying and water conservancy diversion, increase the flowing-path of liquid-state silicon.Can prevent that silicon material from reacting with disk body by equal spraying silicon nitride releasing agent in the inside of anti-overflow substrate disc 1, and impact is recycled.

Overflow of the present invention is reported to the police and has been adopted thermocouple to lay square frame 14, the cross section that thermocouple is laid square frame 14 is V-arrangement, in the time that silicon liquid is excessive, while flowing on thermocouple laying square frame 14 by the pod apertures of carbon felt, to facilitate the water conservancy diversion of silicon liquid, thermocouple is laid square frame 14 and is adopted High-Temperature Mo to be made, surface spraying releasing agent, have high temperature resistant, with the effect of liquid-state silicon isolation.Lay in square frame 14 and lay thermopair in thermocouple, have the feature of real-time, in the time having heat source temperature near it, it can change by rapid displays temperature, and alert may need take appropriate measures in overflow.Thermocouple 15 is directly installed on the silicon material of top, has ensured that liquid-state silicon liquid can send warning the very first time, so that operator takes corresponding emergency processing mode.

Claims (2)

1. the anti-overflow substrate disc of a polycrystalline silicon ingot or purifying furnace, comprise circular or oval-shaped anti-overflow substrate disc (1), it is characterized in that, on the bottom surface of anti-overflow substrate disc (1), be respectively arranged with thermocouple and pass through pipe (3) by pipe (2) and crucible platform pillar, in anti-overflow substrate disc (1), be fixedly installed respectively the spirrillum flow deflector (4) and the ring diversion plate (5) that are air vane shape.

2. the anti-overflow substrate disc of a kind of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterized in that, in anti-overflow substrate disc (1), be uniformly-spaced provided with four spirrillum flow deflectors (4) that are air vane shape radian, be the head of spirrillum flow deflector (4) of air vane shape together with ring diversion plate (5) cross-under.