CN203752288U - Device for manufacturing ITO target material blank body - Google Patents

Device for manufacturing ITO target material blank body Download PDF

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Publication number
CN203752288U
CN203752288U CN201420085600.8U CN201420085600U CN203752288U CN 203752288 U CN203752288 U CN 203752288U CN 201420085600 U CN201420085600 U CN 201420085600U CN 203752288 U CN203752288 U CN 203752288U
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CN
China
Prior art keywords
ito
counterdie
vavuum pump
base substrate
ito target
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Expired - Fee Related
Application number
CN201420085600.8U
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Chinese (zh)
Inventor
杨硕
郗雨林
王政红
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725th Research Institute of CSIC
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725th Research Institute of CSIC
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Priority to CN201420085600.8U priority Critical patent/CN203752288U/en
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Publication of CN203752288U publication Critical patent/CN203752288U/en
Anticipated expiration legal-status Critical
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Abstract

The utility model relates to the technical field of materials, in particular to a device for manufacturing an ITO target material blank body. Micro-hole dies are arranged in the middle of an upper die and a lower die, a sealing cover is arranged at the top end of the upper die, a sealed upper working cavity is formed, the upper working cavity is connected with a vacuum pump A through a pipeline, the lower die is connected with a vacuum pump B, then the vacuum pump A and the vacuum pump B are operated respectively, ITO slurry placed on the micro-hole dies is subjected to bubble removing by vacuumizing, and the high-density even target material blank body is obtained. The device has the advantages of being simple in structure, convenient to use and the like, meanwhile, the manufactured ITO target material blank body is large in specification, high in density, high in purity, low in cost and very suitable for manufacturing the large-specification high-grade ITO target material blank body in a sintering mode under an oxygen atmosphere condition.

Description

A kind of device of preparing ITO target base substrate
[technical field]
The utility model relates to material technology field, relates in particular to a kind of device of the ITO of preparation target base substrate, is specifically related to a kind of device of preparing large specification high-density ITO targe material base substrate.
[background technology]
Known, ITO target blank forming technology is divided into dry-press process and the large class of wet moulding two, wherein dry method generally adopts the first mold pressing method of isostatic cool pressing (CIP) again, both ITO powder was directly placed in to mould, by press, carry out axial pressure and moulding, by isostatic cool pressing (CIP), further improve green density again, the processing procedure of the method is short, simple to operate, but molding blank Density inhomogeneity, mold process be prone to layering, to mould and pressing precision require high, be difficult to suppress large specification base substrate etc.The wet moulding of ITO target base substrate is normally poured into previously prepared ITO slurry in plaster mold, adopt multiaspect, two-sided or one side midge, make ITO blank forming, by this method, can obtain large specification, high density, uniform sheet-shaped blank, and cost is lower, but the difficult point of injection forming is the technology of preparing that is not suitable for the slurry of cast, applicant is through retrieval, find in 2010 " pottery " the 7th phase < < high-performance ITO ceramic target production technology development trend > > mono-literary composition, mention a kind of technological process of injection forming: take deionized water as solvent, ITO powder is made to slurry, under certain pressure, inject again and in mould, make it to be shaped to biscuit etc., but, above injection forming technology adopts gypsum mold conventionally, absorption speed is slow, molding time is long, thereby blank density is lower, and easily ftracture, cause preparation during large specification ITO target base substrate percent defective more high.
Simultaneously, Japan, Korea S be take as main in the main supplier of ITO target at present, occupy more than 95% market share, domestic ITO target is subject to the restriction of technical merit, its size is less, quality is not high, cause the flat-panel monitor whole dependence on import of medium and high level ITO target used, therefore, explore production process route and the associated production equipment of a large specification of low-cost preparation, high-density ITO targe material, in ITO target market competition, occupy catbird seat at home, also will bring considerable economic benefit and social benefit etc.
[summary of the invention]
For overcoming the deficiency existing in background technology, the utility model provides a kind of device of the ITO of preparation target base substrate, the utility model arranges micropore mold by the middle part at upper die and lower die, seal cover is set on the top of patrix and forms airtight upper working chamber, wherein go up working chamber and connect vavuum pump A by pipeline, counterdie connects vavuum pump B, then distinguish operated vacuum pumps A and vavuum pump B, and then realization vacuumizes de-bubble and obtains highdensity even ITO target base substrate the ITO slurry of placing on micropore mold, the utlity model has simple in structure, the feature such as easy to use.
For realizing goal of the invention as above, the utility model adopts technical scheme as described below:
A kind of device of preparing ITO target base substrate, comprise patrix, counterdie, seal cover and micropore mold, the bottom of described counterdie is provided with valve B, top at counterdie 4 is provided with patrix, at the top of patrix, be provided with seal cover and form an airtight cavity, at the middle part of airtight cavity, be provided with micropore mold and make between patrix and micropore mold to form working chamber, described upper working chamber connects vavuum pump A by pipeline, on the pipeline between vavuum pump A and upper working chamber, be provided with valve A, wherein counterdie connects vavuum pump B by pipeline, on the pipeline between vavuum pump B and counterdie, be connected with vacuum meter.
The device of described preparation ITO target base substrate, is provided with surge tank between described counterdie and vavuum pump B, on the pipeline between counterdie and surge tank, is provided with vacuum meter.
Adopt technical scheme as above, the utlity model has superiority as described below:
A kind of device of preparing ITO target base substrate described in the utility model, the utility model arranges micropore mold by the middle part at upper die and lower die, seal cover is set on the top of patrix and forms airtight upper working chamber, wherein go up working chamber and connect vavuum pump A by pipeline, counterdie connects vavuum pump B, then distinguish operated vacuum pumps A and vavuum pump B, and then realization vacuumizes de-bubble and obtains highdensity even ITO target base substrate the ITO slurry of placing on micropore mold, the utlity model has simple in structure, the feature such as easy to use, the ITO target base substrate specification that the utility model goes out to prepare is simultaneously large, density is high, purity is high, cost is low, be particularly suitable for sintering under oxygen atmosphere condition and make the high-end ITO target of large specification base substrate.
[accompanying drawing explanation]
Fig. 1 is structural representation of the present utility model;
In the drawings: 1, valve A; 2, vavuum pump A; 3, clamping screw; 4, counterdie; 5, valve B; 6, seal cover; 7; Patrix, 8, vacuum meter; 9, ITO slurry; 10, vavuum pump B; 11, micropore mold; 12, surge tank.
[specific embodiment]
By the following examples, can explain in more detail the utility model, the utility model is not limited to the following examples;
A kind of device of preparing ITO target base substrate described in 1 by reference to the accompanying drawings, comprise patrix 7, counterdie 4, seal cover 6 and micropore mold 11, the bottom of described counterdie 4 is provided with for vacuum breaker or water discharging valve B5, on the top of counterdie 4, be provided with patrix 7, at the top of patrix 7, be provided with seal cover 6 and form an airtight cavity, at the middle part of airtight cavity, be provided with micropore mold 11 and make between patrix 7 and micropore mold 11 to form working chamber, the material of wherein said micropore mold 11 is that pore-size is resin or gypsum or glass or the composite of 200~1000nm, Separation of Solid and Liquid while vacuumizing for realizing slurry, exclusive segment moisture etc., described upper working chamber connects vavuum pump A2 by pipeline, on the pipeline between vavuum pump A2 and upper working chamber, be provided with the valve A1 for vacuum breaker, wherein counterdie 4 connects vavuum pump B10 by pipeline, on the pipeline between vavuum pump B10 and counterdie 4, be connected with vacuum meter 8, now in order to prevent, in suction filtration process, because entering vavuum pump B10, moisture cause vavuum pump B10 to reduce life-span or damage, between described counterdie 4 and vavuum pump B10, be provided with surge tank 12, on the pipeline between counterdie 4 and surge tank 12, be provided with vacuum meter 8.
While utilizing the utility model to prepare ITO target base substrate, the first step, first get purity 99.9%~100%, average particle size range is that the ITO powder of 0.02~1 μ m or the mixture of indium oxide and tin oxide are as powder, wherein the mass ratio of the mixture of indium oxide and tin oxide is 90:10, take deionized water as aqueous solvent, aqueous solvent is when preparing solid content and be 80~90% slurry, the mass content of aqueous solvent accounts for 11.1~25.0% of powder, then in aqueous solvent, add the organic dispersing agent that accounts for powder 0.05~1% to form solution, wherein organic dispersing agent is any one in polyacrylic dispersant or polycarboxylic-acid dispersant, further with ammoniacal liquor regulator solution pH value to 9~11, in above-mentioned solution preparation process, to magnetic force rotor or mechanical agitation rod, stir all the time, so that the organic dispersing agent in aqueous solvent mixes with ammoniacal liquor, then powder and the solution configuring are together carried out to ball milling, wherein the selected ball grinder material of ball milling is agate or nylon or polyurethane, ball-milling medium is zirconia ball, ball radius is 5~20mm, the scope of ratio of grinding media to material is 1.5:1~4:1, the rotating speed of ball milling is 100~150r/min, Ball-milling Time is 5~12h, through ball milling, preparing solid content is 80~90%, viscosity is 18~971mPas(room temperature, rotating speed 20s -1) ITO slurry 9, second step, the ITO slurry 9 that the first step is obtained is put on the micropore mold 11 of the utility model, covering seal cover 6 makes the patrix 7 of suction filtration former and seal cover 6 form the upper working chamber sealing, the specification of described upper working chamber is (400~500) * (500~600) * (10~12) mm, starting vavuum pump A2 vacuumizes upper working chamber, it is by valve A1 vacuum breaker after 0.5~2Pa fidelity sky 5~10min that upper working chamber is evacuated to vacuum, and then realize ITO slurry 9 and vacuumize de-bubble, then starting vavuum pump B10 vacuumizes the counterdie 4 of micropore mold 11 belows, object is that the portion of water in ITO slurry 9 is discharged in the micropore from micropore mold 11, now in 10~30min, counterdie 4 to be evacuated to vacuum be 0.1~100Pa to vavuum pump B10, and fidelity sky 1~3h, the demoulding immediately after ITO slurry 9 forms base substrate, obtain highdensity even ITO target base substrate.
Specific embodiment of the utility model is as follows:
Embodiment 1
By the ITO slurry 9 after ball milling after sieving, pour on the micropore mold 11 that in working chamber, specification is 400 * 500 * 10mm, after seal cover 6 is locked by clamping screw 3, ITO slurry 9 in upper working chamber is vacuumized to de-bubble, being evacuated to vacuum is vacuum breaker after 1Pa fidelity sky 5~10min, then counterdie 4 is vacuumized, and 20min is evacuated to 10Pa and keeps 2h, the demoulding immediately after moulding, obtaining specification is the ITO base substrate of 400 * 500 * 10mm.
Embodiment 2
By the ITO slurry 9 after ball milling after sieving, pour on the micropore mold 11 that in working chamber, lattice are 400 * 500 * 10mm, after seal cover 6 is locked by clamping screw 3, ITO slurry 9 in upper working chamber is vacuumized to de-bubble, being evacuated to vacuum is vacuum breaker after 1Pa fidelity sky 5~10min, then counterdie 4 is vacuumized, and 20min is evacuated to 10Pa and keeps 2h, the demoulding immediately after moulding, obtaining specification is the ITO base substrate of 400 * 500 * 10mm.
Embodiment 3
By the ITO slurry 9 after ball milling after sieving, pour on the micropore mold 11 that in working chamber, specification is 400 * 500 * 10mm, after seal cover 6 is locked by clamping screw 3, ITO slurry 9 in upper working chamber is vacuumized to de-bubble, being evacuated to vacuum is vacuum breaker after 1Pa fidelity sky 5~10min, then counterdie is vacuumized, and 20min is evacuated to 10Pa and keeps 2h, the demoulding immediately after moulding, obtaining specification is the ITO base substrate of 400 * 500 * 10mm.
Embodiment 4
By the ITO slurry 9 after ball milling after sieving, pour on the micropore mold 11 that working chamber inner chamber specification is 400 * 500 * 10mm, after seal cover 6 is locked by clamping screw 3, ITO slurry 9 in upper working chamber is vacuumized to de-bubble, being evacuated to vacuum is vacuum breaker after 1Pa fidelity sky 5~10min, then counterdie is vacuumized, and 20min is evacuated to 10Pa and keeps 2h, the demoulding immediately after moulding, obtaining specification is the ITO base substrate of 400 * 500 * 10mm.
Embodiment 5
By the ITO slurry 9 after ball milling after sieving, pour on the micropore mold 11 that in working chamber, specification is 400 * 500 * 10mm, after seal cover 6 is locked by clamping screw 3, ITO slurry 9 in upper working chamber is vacuumized to de-bubble, being evacuated to vacuum is vacuum breaker after 1Pa fidelity sky 5~10min, then counterdie is vacuumized, and 20min is evacuated to 10Pa and keeps 2h, the demoulding immediately after moulding, obtaining specification is the ITO base substrate of 400 * 500 * 10mm.
The effect of implementing after the present invention is as follows:
ITO target base substrate specification prepared by the utility model is large, density is high, purity is high, cost is low, is particularly suitable for sintering under oxygen atmosphere condition and makes the high-end ITO target of large specification base substrate, specific as follows:
(1) large specification, high density
The ceramic size of high solids content is one of necessary condition of preparation high strength, high density ceramic base substrate.ITO base substrate only has higher intensity, specification could be amplified, and avoids the cracking in carrying or dry run; ITO base substrate only has higher density, could go out highdensity ITO target by sintering.The utility model is the ito powder of 0.02~1 μ m or the mix powder of indium oxide and tin oxide by average grain diameter, the ITO slurry solid content of preparation is up to 80~90%, with this slurry, pass through vacuum filtration moulding, large specification, high strength, highdensity ITO base substrate be can obtain, and then large specification, highdensity ITO target obtained.
(2) high-purity
The ITO powder purity that the utility model is used is 4N level (> 99.99%), and that in slurry, adds only has organic dispersing agent and ammoniacal liquor, and the addition of dispersant seldom, only accounts for 0.05~1% of powder, can be at the degreasing stage of base substrate burn off; Ball-milling medium in slurry mechanical milling process is also selected organic polyurethane ball or the good zirconia ball of wearability, like this, can guarantee that the purity of target is not less than 99.99% after sintering.
(3) low cost
The utility model is with prepared ITO slurry, it is 65~75% that the large specification blank density of preparing by the utility model can reach 4.65~5.37g/cm3(relative density), density after isostatic cool pressing when this density is close to or higher than dry-press process (200~230MPa), therefore can be without isostatic cool pressing and direct sintering goes out high-density ITO targe material; In addition, also saved equipment and the operation such as mist projection granulating, great tonnage press in dry-pressing formed method.Can obtain at lower cost the high-end ITO target of large specification.
The utility model does not describe part in detail for prior art.
The embodiment selecting in this article in order to disclose goal of the invention of the present utility model, currently thinks suitablely, still, will be appreciated that, the utility model is intended to comprise that all belong to all changes and the improvement of the embodiment in this design and invention scope.

Claims (2)

1. a device of preparing ITO target base substrate, comprise patrix (7), counterdie (4), seal cover (6) and micropore mold (11), it is characterized in that: the bottom of described counterdie (4) is provided with valve B(5), on the top of counterdie (4), be provided with patrix (7), at the top of patrix (7), be provided with seal cover (6) and form an airtight cavity, at the middle part of airtight cavity, be provided with micropore mold (11) and make the upper working chamber of formation between patrix (7) and micropore mold (11), described upper working chamber connects vavuum pump A(2 by pipeline), at vavuum pump A(2) and upper working chamber between pipeline on be provided with valve A(1), wherein counterdie (4) connects vavuum pump B(10 by pipeline), at vavuum pump B(10) and counterdie (4) between pipeline on be connected with vacuum meter (8).
2. the device of preparation according to claim 1 ITO target base substrate, is characterized in that: described counterdie (4) and vavuum pump B(10) between be provided with surge tank (12), on the pipeline between counterdie (4) and surge tank (12), be provided with vacuum meter (8).
CN201420085600.8U 2014-02-27 2014-02-27 Device for manufacturing ITO target material blank body Expired - Fee Related CN203752288U (en)

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Application Number Priority Date Filing Date Title
CN201420085600.8U CN203752288U (en) 2014-02-27 2014-02-27 Device for manufacturing ITO target material blank body

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106045496A (en) * 2016-05-27 2016-10-26 洛阳瑞德材料技术服务有限公司 Method using vacuum negative-pressure slip casting technology to prepare ITO target material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106045496A (en) * 2016-05-27 2016-10-26 洛阳瑞德材料技术服务有限公司 Method using vacuum negative-pressure slip casting technology to prepare ITO target material
CN106045496B (en) * 2016-05-27 2018-06-19 洛阳瑞德材料技术服务有限公司 A kind of method that ITO target is prepared using negative pressure of vacuum injection forming technology

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CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20140806

Termination date: 20210227