CN203732915U - Intelligent voltage switching device - Google Patents
Intelligent voltage switching device Download PDFInfo
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- CN203732915U CN203732915U CN201320792711.8U CN201320792711U CN203732915U CN 203732915 U CN203732915 U CN 203732915U CN 201320792711 U CN201320792711 U CN 201320792711U CN 203732915 U CN203732915 U CN 203732915U
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- 238000001514 detection method Methods 0.000 claims description 2
- 230000006870 function Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Abstract
The utility model discloses an intelligent voltage switching device, including a micro control unit, a digital/analog converter, a power supply chip, a power supply, a voltage division unit and a switch unit, wherein the micro control unit is used for detecting the specification of an internal memory module to be tested and sending a level signal corresponding to the internal memory module to be tested to the digital/analog converter; the digital/analog converter is used for performing digital/analog conversion to the level signal and sending a voltage corresponding to the level signal to the switch unit; the switch unit is controlled by the voltage sent by the digital/analog converter; the power supply chip is used for outputting a voltage matched with the internal memory module to be tested according to a received feedback voltage; the voltage division unit is used for dividing the voltage output by the power supply chip and feeding back the divided voltage to the power supply chip. The intelligent voltage switching device disclosed by the utility model can be used for automatically detecting the specification of the internal memory module and switching to a function of a matched voltage.
Description
Technical field
The utility model relates to computing machine, especially the device of the intelligent switched voltage in notebook computer.
Background technology
The dual inline memory module of notebook computer is mostly DDR3 and DDR3L at present, but their required supply voltages are different, are respectively 1.5V and 1.35V.In order to configure different memory modules, must in notebook computer, increase voltage switching device.For above problem, existing solution is the PCH utilizing in notebook computer, that is, platform management control center and power supply chip power chip, according to the DDR3 inserting or the difference of DDR3L memory modules, be switched to the voltage matching with memory modules.Detailed process is: after system boot, first give initial voltage of memory modules, the memory modules that detecting is inserted after the normal operation of system, the memory modules inserting passes through SMBUS, , System Management Bus is connected to PCH, by PCH, gone to read the SPD information of memory modules, the type of judgement memory modules, PCH controls by BIOS the GPIO pin that output had previously defined afterwards, for different memory modules, GPIO is made as High or Low issues power chip, process before this all needs SW(vhdl and c) team does special setting, last power chip switches output voltage level again.Wherein SPD refers to that one group about the configuration information of memory modules.Existing solution voltage handoff procedure is comparatively loaded down with trivial details, in order to improve the problems referred to above, the utility model proposes a kind of device of automatic switchover voltage of simplification.
Utility model content
The purpose of this utility model is to provide a kind of device of intelligent switched voltage.Be used for the function that realizes the specification of Auto-Sensing memory modules and switch to the voltage matching with it.
For achieving the above object, the utility model proposes a kind of device of intelligent switched voltage, comprise micro-control unit, D/A, power supply chip, the power supply to described power supply chip power supply, partial pressure unit and switch element:
Described micro-control unit, for detection of the specification of memory modules to be measured, and sends the level signal corresponding with described memory modules to be measured to D/A;
Described D/A, for above-mentioned level signal is carried out to D/A switch, and sends the voltage corresponding with described level signal to described switch element;
Described switch element, is controlled by the voltage that described D/A sends, when the first voltage, and described switch element conducting, when second voltage, described switch element cut-off;
Described power supply chip, for according to the feedback voltage receiving, exports the voltage matching with memory modules to be measured;
Described partial pressure unit, for the voltage of described power supply chip output is carried out to dividing potential drop, and by the Voltage Feedback after dividing potential drop to described power supply chip.
The beneficial effect of this scheme of the present utility model is can be realized the specification of Auto-Sensing memory modules and be switched to the function of the voltage matching with it by said apparatus.
Preferably, described micro-control unit comprises I
2c bus, storage unit and ALU:
Described I
2c bus, for reading the configuration information of this memory modules to be measured in the SPD from this memory modules to be measured;
Described storage unit, for depositing the configuration information of pre-set all memory modules;
Described ALU, for to coming from I
2the data of C bus and storage unit are processed, and judge the specification of this memory modules to be measured, and the level signal that described D/A output and this memory modules to be measured are matched.
Accompanying drawing explanation
Fig. 1 shows the structural drawing of the device of intelligent switched voltage.
Embodiment
With reference to the accompanying drawings embodiment of the present utility model is described further:
As shown in Figure 1, the device according to the intelligent switched voltage of embodiment of the present utility model comprises micro-control unit (MCU) 1, D/A 2, power supply chip 3, power supply VCC, inductance L, the first resistance R 1, the second resistance R 2, the three resistance R 3, switching tube Q1.
Wherein micro-control unit 1 comprises I
2c bus 11, storage unit 12 and ALU 13.
Described I
2c bus 11 is for reading the configuration information of this memory modules to be measured in the SPD from this memory modules to be measured.
Described storage unit 12 is for depositing the configuration information of pre-set all memory modules.
Described ALU 13 is for to coming from I
2the data of C bus 11 and storage unit 12 are processed, and judge the specification of this memory modules to be measured, and the level signal that D/A 2 outputs and this memory modules to be measured are matched.
D/A 2, for the level signal that comes from micro-control unit 1 is carried out to D/A switch, is exported corresponding high voltage or low-voltage according to the specification of described memory modules to be measured.
Power supply chip 3 is common according to feedback voltage in prior art, the power supply chip of the different voltages of coupling output, power supply chip 3 comprises the first port IN, the second port LX and the 3rd port FB, described the first port IN is for receiving the power supply of described power supply VCC, described the second port LX is used for exporting DDR3 or the needed voltage of DDR3L, and described the 3rd port FB is the voltage after electric resistance partial pressure for the voltage that receives described the second port LX output.
As shown in Figure 1, the first port IN of power supply chip 3 is powered by power supply VCC, its second port LX passes through inductance L, the first resistance R 1 and the second resistance R 2 ground connection, between described inductance L and the first resistance R 1, draw line as output terminal OUT, from drawing line between described the first resistance R 1 and the second resistance R 2, be connected to described the 3rd port FB, and be connected to switching tube Q1 from drawing line between described the first resistance R 1 and the second resistance R 2, and then by the 3rd resistance R 3 ground connection, described switching tube Q1 is controlled by D/A 2 by micro-control unit (MCU) 1.
The device of the intelligent switched voltage that the utility model is related can be realized the specification of Auto-Sensing memory modules and switch to the function of the voltage matching with it.
The memory standards of notebook computer is mostly DDR3 and DDR3L at present.Wherein DDR3 required voltage is 1.5V, and DDR3L required voltage is 1.35V.
Suppose that the memory standards using when notebook computer is initial is DDR3L, its required voltage is 1.35V, and the output voltage of the second port LX of described power supply chip 3 is 1.35V, and described switching tube Q1 is in cut-off state.And the first resistance R 1, the second resistance R 2, the three resistance R 3 are arranged as follows: when the output voltage of the second port LX is 1.35V and switching tube Q1 cut-off, the voltage that the 3rd port FB receives is reference voltage, for example 0.6V; When the output voltage of the second port LX is 1.5V and switching tube Q1 conducting, the voltage that the 3rd port FB receives is reference voltage, for example 0.6V.
Work as I
2c bus 11 is from reading the configuration information of this memory modules to be measured in the SPD of this memory modules to be measured, and the configuration information of depositing pre-set all memory modules in itself and described storage unit 12 is compared to processing in ALU 13, when the specification of judging this memory modules to be measured is DDR3L, to the D/A 2 output level signal corresponding with this DDR3L, make D/A 2 output LOW voltages, for example 0V.Now described switching tube Q1 keeps cut-off state, the voltage 1.35V of described power supply chip 3 second port LX outputs is through the first resistance R 1, after the second resistance R 2 dividing potential drops, the voltage that feeds back to the 3rd port FB is reference voltage 0.6V, according to this reference voltage, the output voltage of the second port LX of described power supply chip 3 is 1.35V so.When judging the specification of this memory modules to be measured and be DDR3,, to the D/A 2 output level signal corresponding with this DDR3, make D/A 2 output HIGH voltages, for example 3.3V.Now described switching tube Q1 is in conducting state, the voltage 1.35V of described power supply chip 3 second port LX outputs is the electric resistance partial pressure after in parallel with the 3rd resistance R 3 through the first resistance R 1 and the second resistance R 2, the voltage that feeds back to the 3rd port FB is less than reference voltage 0.6V, according to this feedback voltage, the output voltage of the second port LX of described power supply chip 3 is 1.5V so.
Work as I
2c bus 11 is again from reading the configuration information of this memory modules to be measured in the SPD of memory modules to be measured, and the configuration information of depositing pre-set all memory modules in itself and described storage unit 12 is compared to processing in ALU 13, if the specification of judging this memory modules to be measured is DDR3 still,, to the D/A 2 output level signal corresponding with this DDR3, make D/A 2 output HIGH voltages.Now described switching tube Q1 maintains conducting state, the voltage 1.5V of described power supply chip 3 second port LX outputs is the electric resistance partial pressure after in parallel with the 3rd resistance R 3 through the first resistance R 1 and the second resistance R 2, the voltage that feeds back to the 3rd port FB is reference voltage 0.6V, according to this reference voltage, the output voltage of the second port LX of described power supply chip 3 is still 1.5V so.If when judging the specification of this memory modules to be measured and being DDR3L,, to the D/A 2 output level signal corresponding with this DDR3L, make D/A 2 output LOW voltages.Now described switching tube Q1 is again in cut-off state, the voltage 1.5V of described power supply chip 3 second port LX outputs is through the first resistance R 1, after the second resistance R 2 dividing potential drops, the voltage that feeds back to the 3rd port FB is greater than reference voltage 0.6V, according to this feedback voltage, the output voltage of the second port LX of described power supply chip 3 is 1.35V so.So far realize the specification of Auto-Sensing memory modules and switched to the function of the voltage matching with it.
For later memory modules upgrade mode, by DDR3 to DDR3L again to LPDDR3 etc., can share the utility model.
Claims (2)
1. a device for intelligent switched voltage, is characterized in that: comprise micro-control unit, and D/A, power supply chip, the power supply to described power supply chip power supply, partial pressure unit and switch element:
Described micro-control unit, for detection of the specification of memory modules to be measured, and sends the level signal corresponding with described memory modules to be measured to D/A;
Described D/A, for above-mentioned level signal is carried out to D/A switch, and sends the voltage corresponding with described level signal to described switch element;
Described switch element, is controlled by the voltage that described D/A sends, when the first voltage, and described switch element conducting, when second voltage, described switch element cut-off;
Described power supply chip, for according to the feedback voltage receiving, exports the voltage matching with memory modules to be measured;
Described partial pressure unit, for the voltage of described power supply chip output is carried out to dividing potential drop, and by the Voltage Feedback after dividing potential drop to described power supply chip.
2. the device of intelligent switched voltage according to claim 1, is characterized in that: described micro-control unit comprises I
2c bus, storage unit and ALU:
Described I
2c bus, for reading the configuration information of this memory modules to be measured in the SPD from this memory modules to be measured;
Described storage unit, for depositing the configuration information of pre-set all memory modules;
Described ALU, for to coming from I
2the data of C bus and storage unit are processed, and judge the specification of this memory modules to be measured, and the level signal that described D/A output and this memory modules to be measured are matched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320792711.8U CN203732915U (en) | 2013-12-04 | 2013-12-04 | Intelligent voltage switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320792711.8U CN203732915U (en) | 2013-12-04 | 2013-12-04 | Intelligent voltage switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203732915U true CN203732915U (en) | 2014-07-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320792711.8U Expired - Lifetime CN203732915U (en) | 2013-12-04 | 2013-12-04 | Intelligent voltage switching device |
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| Country | Link |
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| CN (1) | CN203732915U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105259989A (en) * | 2015-11-18 | 2016-01-20 | 合肥宝龙达信息技术有限公司 | Method for achieving multisource compatibility of notebook on-board memory |
-
2013
- 2013-12-04 CN CN201320792711.8U patent/CN203732915U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105259989A (en) * | 2015-11-18 | 2016-01-20 | 合肥宝龙达信息技术有限公司 | Method for achieving multisource compatibility of notebook on-board memory |
| CN105259989B (en) * | 2015-11-18 | 2019-01-29 | 合肥宝龙达信息技术有限公司 | A kind of method of the compatible multi-source of notebook memory on board |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |
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| CX01 | Expiry of patent term |