CN203708208U - Power-down memory circuit - Google Patents
Power-down memory circuit Download PDFInfo
- Publication number
- CN203708208U CN203708208U CN201320885148.9U CN201320885148U CN203708208U CN 203708208 U CN203708208 U CN 203708208U CN 201320885148 U CN201320885148 U CN 201320885148U CN 203708208 U CN203708208 U CN 203708208U
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- China
- Prior art keywords
- chip
- voltage
- electric capacity
- power
- memory circuit
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000003990 capacitor Substances 0.000 claims abstract description 15
- 230000004913 activation Effects 0.000 claims abstract description 8
- 239000000843 powder Substances 0.000 claims description 41
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract 5
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004321 preservation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
Abstract
The utility model discloses a power-down memory circuit. The circuit comprises an IC, a resistor connected with the IC, a voltage detection capacitor connected in series with the resistor and grounded, a cut-off diode connected with the resistor in parallel, and a power supply capacitor which is connected with the IC and used for supplying power for the IC when the power-down memory circuit loses power. According to the utility model, when the power-down memory circuit loses power, the power supply capacitor supplies power for the IC, and the IC supplies power for the voltage detection capacitor and detects the voltage of the voltage detection capacitor; if the voltage of the voltage detection capacitor is lower than a low power consumption voltage, the IC is switched into a low power consumption mode; and thereafter if the power supply voltage of the voltage detection capacitor is higher than an activation voltage, the IC is switched into a normal mode, so that the time that the IC stores the operation parameters is prolonged after the power-down memory circuit loses power.
Description
Technical field
The utility model relates to circuit engineering field, is specifically related to a kind of powder down memory circuit.
Background technology
Household appliances are divided into charged pool and two kinds of charged pools not, the effect of charged pool is mainly to provide energy with memory work parameter to chip for household appliances when the power down, the household appliances of charged pool cannot not preserved running parameter for a long time, can only rely on the remaining electric quantity of electric capacity to maintain the operation of chip, but that it is held time is very short, but also there is the risk of data random loss.
Utility model content
The purpose of this utility model is to provide a kind of powder down memory circuit, the time of being intended to extend powder down memory circuit preserving running parameter in the time of power down.
In order to realize the purpose of this utility model, the utility model provides a kind of powder down memory circuit, comprising:
IC chip;
The resistance being connected with IC chip;
Be connected in series the also voltage detecting electric capacity of ground connection with resistance;
Be connected in parallel on the hold-off diode at resistance two ends; And
Be connected with IC chip for the power supply electric capacity to IC chip power supply when the powder down memory circuit power down;
Described IC chip is powered and detects the voltage of voltage detecting electric capacity to voltage detecting electric capacity in the time of powder down memory circuit power down, and IC chip switches to low-power consumption mode during lower than low power consumption voltage at the voltage of voltage detecting electric capacity, IC chip switches to normal mode during higher than activation voltage at the supply power voltage that switches to voltage detecting electric capacity after low-power consumption mode.
Preferably, described resistance connects the AN pin of IC chip, and described power supply electric capacity connects VDD pin and the GND pin of IC chip.
Preferably, described voltage detecting electric capacity is ceramic disc capacitor, and described power supply electric capacity is electrochemical capacitor.
The utility model also provides a kind of powder down memory circuit, comprising:
IC chip;
The resistance being connected with IC chip;
Be connected in series the also voltage detecting electric capacity of ground connection with resistance;
Be connected to the hold-off diode between voltage detecting electric capacity and voltage source V DD; And
Be connected with IC chip for the power supply electric capacity to IC chip power supply when the powder down memory circuit power down;
Described IC chip is powered and detects the voltage of voltage detecting electric capacity to voltage detecting electric capacity in the time of powder down memory circuit power down, and IC chip switches to low-power consumption mode during lower than low power consumption voltage at the voltage of voltage detecting electric capacity, IC chip switches to normal mode during higher than activation voltage at the supply power voltage that switches to voltage detecting electric capacity after low-power consumption mode.
Because the utility model powder down memory circuit is when the power down, by power supply electric capacity to IC chip power supply, so that switch the discharge time that extends power supply electric capacity, preserve the time of running parameter thereby can extend IC chip in the time of powder down memory circuit power down by voltage detecting capacitance detecting IC chip voltage between low-power consumption mode and normal mode.
Brief description of the drawings
Fig. 1 is the circuit diagram of the first embodiment of the powder down memory circuit of application the utility model method;
Fig. 2 is powder down memory circuit fundamental diagram shown in Fig. 1;
Fig. 3 is the circuit diagram of the second embodiment of the powder down memory circuit of application the utility model method.
Realization, functional characteristics and the advantage of the utility model object, in connection with embodiment, are described further with reference to accompanying drawing.
Embodiment
Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
The utility model provides a kind of powder down memory circuit, refer to Fig. 1, it has disclosed the first embodiment of the utility model powder down memory circuit, in the present embodiment, powder down memory circuit comprise IC chip 110, the resistance 120 that is connected with IC chip 110, with resistance 120 serial connections the voltage detecting electric capacity 130 of ground connection, the power supply electric capacity 150 that is connected in parallel on the hold-off diode 140 at resistance 120 two ends and is connected with IC chip 110.Described resistance 120 connects the AN pin of IC chip 110.Described voltage detecting electric capacity 130 is ceramic disc capacitors, and its capacity is fast in pF level, electric discharge.Described power supply electric capacity 150 connects VDD pin and the GND pin of IC chip 110, and described power supply electric capacity 150 is electrochemical capacitor EC1, and its capacity greatly in uF level, electric discharge slowly.
Refer to Fig. 2, the operation principle of the present embodiment powder down memory circuit is as follows:
In the time that powder down memory circuit turn-on voltage source VDD works, voltage source V DD powers to power supply electric capacity 150; In the time of powder down memory circuit power down, power supply electric capacity 150 is powered to IC chip 110, so that IC chip 110 is preserved running parameter; IC chip 110 powers to voltage detecting electric capacity 130, and IC chip 110 detects the voltage of voltage detecting electric capacity 130 and itself and the low power consumption voltage of setting are compared, IC chip 110 switches to low-power consumption mode during lower than low power consumption voltage at the voltage that voltage detecting electric capacity 130 detected; Enter after low-power consumption mode, the electric current that IC chip 110 consumes reduces rapidly, and extend the discharge time of power supply electric capacity 150; Then, IC chip 110 detects the voltage of voltage detecting electric capacity 130 and itself and the activation voltage of setting is compared, IC chip 110 again switches to normal mode in the time that the voltage that voltage detecting electric capacity 130 detected is greater than activation voltage, now IC chip 110 is judged to be to be equal to the pattern being connected with voltage source V DD, IC chip 110 charges to voltage detecting electric capacity 130 and power supply electric capacity, so repeatedly; If in the time that IC chip 110 switches to normal mode from low-power consumption mode, the voltage that IC chip 110 detects voltage detecting electric capacity 130 is not during higher than activation voltage, IC chip 110 still in low-power consumption mode until the supply power voltage of voltage detecting electric capacity 130 during lower than resetting voltage, IC chip 110 resets because supply power voltage is too low.
Because the present embodiment powder down memory circuit is when the power down, detect the voltage of voltage detecting electric capacity 130 by IC chip 110, and between low-power consumption mode and normal mode, switch the discharge time to extend power supply electric capacity 150 by IC chip 110, thereby can extend the time of powder down memory circuit preservation running parameter.
Refer to Fig. 3, it has disclosed the second embodiment of the powder down memory circuit of realizing the utility model method, in the present embodiment, powder down memory circuit comprise IC chip 210, the resistance 220 that is connected with IC chip 210, with resistance 220 serial connections the voltage detecting electric capacity 230 of ground connection, the power supply electric capacity 250 that is connected to the hold-off diode 240 between voltage detecting electric capacity 230 and voltage source V DD and is connected with IC chip 210.Described resistance 220 connects the AN pin of IC chip 210.Described power supply electric capacity 250 connects VDD pin and the GND pin of IC chip 210.
The operation principle of the present embodiment powder down memory circuit is similar to the operation principle of the first embodiment powder down memory circuit, difference is: in the time that powder down memory circuit turn-on voltage source VDD works, charge to voltage detecting electric capacity 230 by voltage source V DD by hold-off diode 240, in the time of powder down memory circuit power down, IC chip 210 powers to voltage detecting electric capacity 230 by resistance 220, and IC chip 210 detects the voltage of voltage detecting electric capacity 230 and itself and the low power consumption voltage of setting is compared, now hold-off diode 240 ends to prevent that voltage detecting electric capacity 230 is to voltage source V DD power supply.
Because the present embodiment powder down memory circuit is when the power down, detect the voltage of voltage detecting electric capacity 230 by IC chip 210, and between low-power consumption mode and normal mode, switch the discharge time to extend power supply electric capacity 250 by IC chip 210, thereby can extend the time of powder down memory circuit preservation running parameter.
These are only preferred embodiment of the present utility model; not thereby limit the scope of the claims of the present utility model; every equivalent structure or conversion of equivalent flow process that utilizes the utility model specification and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (6)
1. a powder down memory circuit, is characterized in that, comprising:
IC chip;
The resistance being connected with IC chip;
Be connected in series the also voltage detecting electric capacity of ground connection with resistance;
Be connected in parallel on the hold-off diode at resistance two ends; And
Be connected with IC chip for the power supply electric capacity to IC chip power supply when the powder down memory circuit power down;
Described IC chip is powered and detects the voltage of voltage detecting electric capacity to voltage detecting electric capacity in the time of powder down memory circuit power down, and IC chip switches to low-power consumption mode during lower than low power consumption voltage at the voltage of voltage detecting electric capacity, IC chip switches to normal mode during higher than activation voltage at the supply power voltage that switches to voltage detecting electric capacity after low-power consumption mode.
2. powder down memory circuit as claimed in claim 1, is characterized in that, described resistance connects the AN pin of IC chip, and described power supply electric capacity connects VDD pin and the GND pin of IC chip.
3. powder down memory circuit as claimed in claim 1, is characterized in that, described voltage detecting electric capacity is ceramic disc capacitor, and described power supply electric capacity is electrochemical capacitor.
4. a powder down memory circuit, is characterized in that, comprising:
IC chip;
The resistance being connected with IC chip;
Be connected in series the also voltage detecting electric capacity of ground connection with resistance;
Be connected to the hold-off diode between voltage detecting electric capacity and voltage source V DD; And
Be connected with IC chip for the power supply electric capacity to IC chip power supply when the powder down memory circuit power down;
Described IC chip is powered and detects the voltage of voltage detecting electric capacity to voltage detecting electric capacity in the time of powder down memory circuit power down, and IC chip switches to low-power consumption mode during lower than low power consumption voltage at the voltage of voltage detecting electric capacity, IC chip switches to normal mode during higher than activation voltage at the supply power voltage that switches to voltage detecting electric capacity after low-power consumption mode.
5. powder down memory circuit as claimed in claim 4, is characterized in that, described resistance connects the AN pin of IC chip, and described power supply electric capacity connects VDD pin and the GND pin of IC chip.
6. powder down memory circuit as claimed in claim 4, is characterized in that, described voltage detecting electric capacity is ceramic disc capacitor, and described power supply electric capacity is electrochemical capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320885148.9U CN203708208U (en) | 2013-12-30 | 2013-12-30 | Power-down memory circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320885148.9U CN203708208U (en) | 2013-12-30 | 2013-12-30 | Power-down memory circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203708208U true CN203708208U (en) | 2014-07-09 |
Family
ID=51058585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320885148.9U Expired - Lifetime CN203708208U (en) | 2013-12-30 | 2013-12-30 | Power-down memory circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203708208U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109375112A (en) * | 2018-08-16 | 2019-02-22 | 江苏玖宇实业有限公司 | A kind of accumulator capacity detection power-failure memory method |
-
2013
- 2013-12-30 CN CN201320885148.9U patent/CN203708208U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109375112A (en) * | 2018-08-16 | 2019-02-22 | 江苏玖宇实业有限公司 | A kind of accumulator capacity detection power-failure memory method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140709 |
|
| CX01 | Expiry of patent term |