CN203707137U - Active matrix organic light emitting diode array substrate and display device - Google Patents
Active matrix organic light emitting diode array substrate and display device Download PDFInfo
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- CN203707137U CN203707137U CN201420079006.8U CN201420079006U CN203707137U CN 203707137 U CN203707137 U CN 203707137U CN 201420079006 U CN201420079006 U CN 201420079006U CN 203707137 U CN203707137 U CN 203707137U
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- 238000003860 storage Methods 0.000 claims description 23
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 238000005265 energy consumption Methods 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model relates to the display technology field, discloses an active matrix organic light emitting diode array substrate and a display device and aims to improve a pixel aperture opening ratio of the array substrate, improve display quality of the display device, reduce energy consumption of the display device and prolong service life of the display device. The array substrate comprises a substrate and multiple pixel units which are arranged on the substrate in an array mode, each pixel unit comprises a film transistor, a first transparent electrode and a second transparent electrode, the first transparent electrodes are arranged on the substrate and are electrically connected with grid electrodes of the film transistors, the second transparent electrodes are electrically connected with drain electrodes of the film transistors, and the first transparent electrodes and the second transparent electrodes are opposite in position.
Description
Technical field
The utility model relates to Display Technique field, particularly relates to a kind of active matrix organic light-emitting diode array base palte and a kind of display unit.
Background technology
OLED(Organic Light-Emitting Diode, Organic Light Emitting Diode, be called for short OLED) thin owing to having, light, the wide visual angle of display screen, active illuminating, glow color continuously adjustable, cost is low, fast response time, energy consumption is little, driving voltage is low, operating temperature range is wide, production technology is simple, luminous efficiency is high and can flexible demonstration etc. advantage, be listed in the Display Technique of future generation that has development prospect.
OLED, according to the difference of type of drive, can be divided into two kinds of passive matrix driving (Passive Matrix is called for short PM) PMOLED and driven with active matrix (Active Matrix is called for short AM) AMOLED.Wherein, PMOLED forms rectangular with negative electrode, anode, light the pixel in array with scan mode, each pixel operates under short pulse pattern, for moment high brightness luminescent, it is simple in structure, can effectively reduce manufacturing cost, but its driving voltage is higher, be not suitable for being applied in large scale, high-resolution display floater.AMOLED adopts independently thin-film transistor (Thin Film Transistor, be called for short TFT) go to control each pixel, each pixel all can drive luminous continuously and independently, the driving voltage of AMOLED is lower, life-span is longer, can be applicable to large scale flat panel display, but its manufacture craft is comparatively complicated, cost is relatively high.
AMOLED can be divided into two kinds of top emission type (light penetrates from upper substrate) and end emission types (light penetrates from infrabasal plate) according to the difference of bright dipping mode.Fig. 1 is that a pixel cell of existing end emission type AMOLED array base palte is at the cross section structure schematic diagram at TFT place, comprise: substrate 1, be positioned at the grid 22 on substrate 1, the gate insulator 4 of cover gate 22, be positioned on gate insulator 4 and the active layer 5 relative with grid 22 positions, be positioned on active layer 5 and the source electrode 6 of relatively putting and drain electrode 7, be positioned at the first insulating barrier 8 on source electrode 6 and drain electrode 7, through via hole 9 and drain electrode 7 transparency electrodes that are connected 23 of the first insulating barrier 8.Wherein, the subregion of grid 22 is relative with drain electrode 7 positions and form storage capacitance 100.
On the array base palte of end emission type AMOLED, be provided with TFT and metal wiring, these structures have stopped part light, become and affect the pixel aperture ratio key factor of (aperture opening ratio refers to that pixel can light-emitting area accounts for the ratio of elemental area).Especially, current a lot of company and research unit are in order to improve the even problem of display frame streaking causing because of otherness between pixel, the dot structure of circuit compensation mode has been proposed one after another, the TFT that its pixel cell comprises two or more, this is for end emission type structure, and the elemental area that TFT and metal wiring take is more, pixel aperture ratio is less, required luminous intensity is corresponding improve also, therefore certainly will cause the power consumption of display unit to increase, and shorten useful life.Therefore, how to improve pixel aperture ratio and become one of current technical problem urgently to be resolved hurrily.
Utility model content
The utility model embodiment provides a kind of active matrix organic light-emitting diode array base palte and a kind of display unit, to improve the pixel aperture ratio of array base palte, promotes the display quality of display unit, reduces the energy consumption of display unit and extends its useful life.
The active matrix organic light-emitting diode array base palte that the utility model embodiment provides, comprise substrate and be positioned on substrate and multiple pixel cells of array arrangement, each described pixel cell comprises thin-film transistor, the first transparency electrode and the second transparency electrode, wherein:
Described the first transparency electrode is positioned on substrate and with the grid of described thin-film transistor and is electrically connected; Described the second transparency electrode is electrically connected with the drain electrode of described thin-film transistor, and described the first transparency electrode is relative with the second transparency electrode position.
In technical solutions of the utility model, it is relatively little that the area of lighttight grid and drain electrode can design, have that the first transparency electrode of high permeability is relative with the second transparency electrode position and area is larger, form storage capacitance between the two, therefore, than prior art, pixel aperture ratio increases greatly, the display quality of the display unit that comprises this array base palte promotes, and energy consumption is lower, and extend useful life.
Preferably, described the first transparency electrode is identical with the second transparency electrode figure.The composition technique of the first transparency electrode and the composition technique of the second transparency electrode can adopt same mask plate, and this scheme can increase the aperture opening ratio of pixel under the prerequisite that does not increase mask plate quantity, therefore, has greatly saved manufacturing cost.
Preferably, described the first transparency electrode is overlapped in the upper surface of grid.Between the first transparency electrode and grid, can be electrically connected reliably, and the making required precision of the first transparency electrode is relatively low, therefore can further saves manufacturing cost.
Preferably, the hearth electrode of the storage capacitance that described the first transparency electrode is described pixel cell, the pixel electrode that described the second transparency electrode is described pixel cell and be simultaneously the top electrode of the storage capacitance of described pixel cell.
Preferably, be formed with the first insulating barrier on described thin-film transistor, described the second transparency electrode is electrically connected by the via hole of the first insulating barrier and the drain electrode of described thin-film transistor.
The utility model embodiment also provides a kind of display unit, comprises the active matrix organic light-emitting diode array base palte described in aforementioned arbitrary technical scheme.The pixel aperture ratio of this display unit is higher, and display quality is better, and energy consumption is low, long service life.
Brief description of the drawings
Fig. 1 is that a pixel cell of existing AMOLED array base palte is at the cross section structure schematic diagram at TFT place;
Fig. 2 is that a pixel cell of the utility model one embodiment A MOLED array base palte is at the cross section structure schematic diagram at TFT place;
Fig. 3 is that a pixel cell of another embodiment A of the utility model MOLED array base palte is at the cross section structure schematic diagram at TFT place;
Fig. 4 is the manufacture method schematic flow sheet of the utility model embodiment A MOLED array base palte.
Reference numeral:
1-substrate; 2-grid; 3-the first transparency electrode; 4-gate insulator; 5-active layer;
6-source electrode; 7-drain electrode; 8-the first insulating barrier; 9-via hole; 10-the second transparency electrode;
11-etching barrier layer; 100-storage capacitance 22-grid (prior art) 23-transparency electrode.
Embodiment
In order to improve the pixel aperture ratio of array base palte, promote the display quality of display unit, reduce the energy consumption of display unit and extend its useful life, the utility model embodiment provides a kind of active matrix organic light-emitting diode (hereinafter to be referred as AMOLED) array base palte and a kind of display unit.In the technical scheme of the utility model array base palte, the first transparency electrode is electrically connected with grid, the second transparency electrode is relative with the first transparency electrode position, it is relatively little that the area of lighttight grid and drain electrode can design, the first transparency electrode and the second transparency electrode area with high permeability form more greatly and between the two storage capacitance, therefore, than prior art, the pixel aperture ratio of array base palte increases greatly, the display quality of the display unit that comprises this array base palte promotes, and energy consumption is lower, extend useful life.
For making the purpose of this utility model, technical scheme and advantage clearer, by the following examples the utility model is described in further detail.
As shown in Figure 2, the AMOLED array base palte that the utility model embodiment provides, comprises substrate 1 and is positioned on substrate 1 and multiple pixel cells of array arrangement, each pixel cell comprises thin-film transistor, the first transparency electrode 3 and the second transparency electrode 10, wherein:
The first transparency electrode 3 is positioned on substrate 1 and with the grid 2 of thin-film transistor and is electrically connected; The second transparency electrode 10 is electrically connected with the drain electrode 7 of thin-film transistor, the first transparency electrode 3 relative with the second transparency electrode 10 positions (i.e. the first transparency electrode 3 and the second transparency electrode 10 have perpendicular to orientation substrate overlapping), in order to obtain large overlapping area, preferably, the first transparency electrode 3 be positioned at the second transparency electrode 10 under.
Can find out by comparison diagram 1 and Fig. 2, in Fig. 1, the subregion of grid 22 need to be relative with drain electrode 7 positions, to form storage capacitance 100, for storage capacitance 100 values are met design requirement, the area of this subregion is conventionally larger, therefore can have influence on the aperture opening ratio of pixel.And in Fig. 2, it is relatively little that the area of lighttight grid 2 and drain electrode 7 can design, have that the first transparency electrode 3 of high permeability is relative with the second transparency electrode 10 positions and area is larger, form storage capacitance 100 ' between the two, therefore, than prior art, the pixel aperture ratio of array base palte increases greatly, the display quality of the display unit that comprises this array base palte promotes, and energy consumption is lower, and extend useful life.
Preferably, the first transparency electrode 3 is identical with the second transparency electrode 10 figures.The composition technique of the composition technique of the first transparency electrode 3 and the second transparency electrode 10 can adopt same mask plate, and this scheme can increase the aperture opening ratio of pixel under the prerequisite that does not increase mask plate quantity, therefore, has greatly saved manufacturing cost.
Preferably, the hearth electrode of the storage capacitance 100 ' that the first transparency electrode 3 is pixel cell, the pixel electrode (pixel electrode can be used as anode or the negative electrode of OLED device) that the second transparency electrode 10 is pixel cell and be simultaneously the top electrode of the storage capacitance 100 ' of pixel cell.Like this, in fact the first transparency electrode 3, the second transparency electrode 10 can adopt same mask plate to make with pixel electrode, and cost of manufacture is lower.
Shown in Fig. 2, the first transparency electrode 3 is overlapped in the upper surface of grid 2.Between the first transparency electrode 3 and grid 2, can be electrically connected reliably, and the making required precision of the first transparency electrode 3 is relatively low, therefore can further saves manufacturing cost.It is worth mentioning that, grid 2 also can be overlapped in the top of the first transparency electrode 3, can realize equally the first transparency electrode 3 and be electrically connected with the reliable of grid 2.
On thin-film transistor, be formed with the first insulating barrier 8, the second transparency electrodes 10 and be electrically connected by the via hole 9 of the first insulating barrier 8 and the drain electrode 7 of thin-film transistor, manufacture craft is comparatively easy, and electrical connection is reliable.
In embodiment illustrated in fig. 2, the concrete structure of each pixel cell comprises:
Be positioned at the grid 2 on substrate 1;
Be positioned at the first transparency electrode 3 being electrically connected on substrate 1 and with grid 2;
Be positioned at the gate insulator 4 on grid 2 and the first transparency electrode 3;
Be positioned on gate insulator 4 and the active layer 5 relative with grid 2 positions;
Be positioned at the top of active layer 5 and the source electrode 6 of relatively putting and drain electrode 7;
The first insulating barrier 8, the first insulating barriers 8 that are positioned on source electrode 6 and drain electrode 7 have the via hole 9 that leads to drain electrode 7;
Be positioned on the first insulating barrier 8 and relative with the first transparency electrode 3 positions with 7 the second transparency electrode 10, the second transparency electrodes 10 that are electrically connected that drain through via hole 9.
Another embodiment as shown in Figure 3, for example, in the time that active layer 5 is oxide semiconductor (indium gallium zinc oxide or hafnium indium-zinc oxide), between active layer 5 and source electrode 6 and drain electrode 7, preferably have etching barrier layer 11, source electrode 6 is connected with active layer 5 through the corresponding via hole (not illustrating with Reference numeral in figure) of etching barrier layer 11 respectively with drain electrode 7.Leak in etching source when metal, etching barrier layer 11 can effectively be protected the channel region of active layer 5 destruction that is not etched, thereby thin-film transistor can normally be worked, to improve the production qualification rate of array base palte.
Substrate 1 can adopt glass substrate, resin substrate or plastic base etc.; The concrete material of grid 2, source electrode 6 and drain electrode 7 is not limit, for example, can be aluminium, copper, molybdenum etc.; Active layer 5 can adopt the materials such as amorphous silicon, polysilicon or oxide semiconductor (such as indium gallium zinc oxide or hafnium indium-zinc oxide); The first transparency electrode 3 can be identical with the material of the second transparency electrode 10, also can be different, can be respectively tin indium oxide or indium zinc oxide etc.; The material of gate insulator 4 can be silicon nitride, and the first insulating barrier 8 can comprise multilayer, for example, comprise the organic film (being positioned on silicon nitride layer, for example, is resin bed) of silicon nitride layer and planarization.
The pixel-driving circuit of AMOLED array base palte can comprise two thin-film transistors and a storage capacitance for 2T1C(pixel-driving circuit) structure can be also the collocation structure that comprises more thin-film transistors.In these dot structures, because the relative prior art of area of film crystal tube grid and drain electrode is less, therefore, the aperture opening ratio of pixel is larger, and display quality is better, and energy consumption is lower.
Please refer to shown in Fig. 2, this embodiment is than prior art, the area of storage capacitance 100 ' is approximately increased to five times, simultaneously, the dielectric thickness of storage capacitance 100 ' is the thickness sum of gate insulator 4 and the first insulating barrier 8, is also approximately increased to five times (in prior art, the dielectric thickness of storage capacitance 100 is the thickness of gate insulator 4) of prior art.By the computing formula of storage capacitance value
(C is storage capacitance value, and ε is dielectric constant, and A is storage capacitance polar plate area, the dielectric thickness that d is storage capacitance) can be found out, storage capacitance value does not reduce, and meets the electric property requirement of product.
As shown in Figure 4, the utility model embodiment also provides the manufacture method of a kind of AMOLED array base palte (can with reference to shown in Fig. 2), is included in the step that forms thin-film transistor, the first transparency electrode 3 and the second transparency electrode 10 on substrate 1, specifically comprises:
Step 101, on substrate 1, form the figure of film crystal tube grid 2;
Step 102, on substrate 1 and grid 2, form the figure of the first transparency electrode 3 of being electrically connected with grid 2;
The graphic structure of step 103, the active layer 5 that forms thin-film transistor and source electrode 6, drain electrode 7;
The figure of the second transparency electrode 10 that step 104, formation are electrically connected with the drain electrode 7 of thin-film transistor, the second transparency electrode 10 is relative with the first transparency electrode 3 positions.
On substrate, the figure of each rete adopts composition technique to make formation conventionally, and one time composition technique generally includes the operations such as base-plate cleaning, film forming, photoresist coating, exposure, development, etching, photoresist lift off; Conventionally adopt physical vapour deposition (PVD) mode (for example magnetron sputtering method) film forming for metal level, form figure by wet etching, and conventionally adopt chemical vapour deposition (CVD) mode film forming for non-metallic layer, form figure by dry etching.After completing steps 104, can adopt vapour deposition method to continue to form each functional layer of OLED.
The AMOLED array base palte that adopts the method to make, it is relatively little that the area of lighttight grid 2 and drain electrode 7 can design, have that the first transparency electrode 3 of high permeability is relative with the second transparency electrode 10 positions and area is larger, form storage capacitance between the two, therefore, than prior art, pixel aperture ratio increases greatly, the display quality of display unit promotes, and energy consumption is lower, and extend useful life.
Preferably, the mask plate using in step 102 and step 104 is same mask plate.Dot structure shown in construction drawing 2 can adopt five mask plates altogether, and than prior art, the method does not increase the usage quantity of mask plate, in increasing pixel aperture ratio, has greatly saved manufacturing cost.
Preferably, step 102 is specially: the figure that forms the first transparency electrode 3 overlapping with grid 2 upper surfaces on substrate 1.Between the first transparency electrode 3 and grid 2, can be electrically connected reliably, and the making required precision of the first transparency electrode 3 is relatively low, therefore can further saves manufacturing cost.
After step 103, before step 104, the method also can comprise:
On thin-film transistor, form the first insulating barrier 8, the first insulating barriers 8 and there is the drain electrode 7 of thin-film transistor of connection and the via hole 9 of the second transparency electrode 10.
Concrete, forming the AMOLED array base palte shown in Fig. 2 can be as follows:
On substrate 1, form the figure of grid 2;
On substrate 1, form the figure of the first transparency electrode 3 being electrically connected with grid 2;
Formation is positioned at the gate insulator 4 on grid 2 and the first transparency electrode 3;
Formation is positioned on gate insulator 4 and the figure of the active layer 5 relative with grid 2 positions;
Formation is positioned at the figure of the top of active layer 5 and the source electrode 6 of relatively putting and drain electrode 7;
Formation is positioned at the figure of the first insulating barrier 8 on source electrode 6 and drain electrode 7, and the first insulating barrier 8 has the via hole 9 that leads to drain electrode 7;
Formation is positioned at the figure with drain electrode 7 the second transparency electrodes 10 that are electrically connected on the first insulating barrier 8 and through via hole 9, and the second transparency electrode 10 is relative with the first transparency electrode 3 positions.
More excellent, can be with reference to shown in figure 3, in the time that active layer 5 is oxide semiconductor, after forming active layer 5, before forming source electrode 6, drain electrode 7, also comprise step: form the figure that is positioned at the etching barrier layer 11 on active layer 5, the position of the corresponding source electrode 6 of etching barrier layer 11 and drain electrode 7 has respectively via hole.Leak in subsequent technique etching source when metal, etching barrier layer 11 can effectively be protected the channel region of active layer 5 destruction that is not etched, thereby thin-film transistor can normally be worked, to improve the production qualification rate of display unit.
The utility model embodiment also provides a kind of display unit, comprises the AMOLED array base palte of aforementioned arbitrary technical scheme.The pixel aperture ratio of this display unit is higher, and display quality is better, and energy consumption is low, long service life.The particular type of display unit is not limit, for example, can be AMOLED display, AMOLED TV etc.
Obviously, those skilled in the art can carry out various changes and modification and not depart from spirit and scope of the present utility model the utility model.Like this, if these amendments of the present utility model and within modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model is also intended to comprise these changes and modification interior.
Claims (6)
1. an active matrix organic light-emitting diode array base palte, is characterized in that, comprises substrate and is positioned on substrate and multiple pixel cells of array arrangement, and each described pixel cell comprises thin-film transistor, the first transparency electrode and the second transparency electrode, wherein,
Described the first transparency electrode is positioned on substrate and with the grid of described thin-film transistor and is electrically connected; Described the second transparency electrode is electrically connected with the drain electrode of thin-film transistor, and described the first transparency electrode is relative with the second transparency electrode position.
2. active matrix organic light-emitting diode array base palte as claimed in claim 1, is characterized in that, described the first transparency electrode is identical with the second transparency electrode figure.
3. active matrix organic light-emitting diode array base palte as claimed in claim 1, is characterized in that, described the first transparency electrode is overlapped in the upper surface of grid.
4. active matrix organic light-emitting diode array base palte as claimed in claim 1, is characterized in that,
The hearth electrode of the storage capacitance that described the first transparency electrode is described pixel cell, the pixel electrode that described the second transparency electrode is described pixel cell and be simultaneously the top electrode of the storage capacitance of described pixel cell.
5. the active matrix organic light-emitting diode array base palte as described in claim 1～4 any one, it is characterized in that, on described thin-film transistor, be formed with the first insulating barrier, described the second transparency electrode is electrically connected by the via hole of the first insulating barrier and the drain electrode of described thin-film transistor.
6. a display unit, is characterized in that, comprises the active matrix organic light-emitting diode array base palte as described in claim 1～5 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420079006.8U CN203707137U (en) | 2014-02-24 | 2014-02-24 | Active matrix organic light emitting diode array substrate and display device |
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| CN201420079006.8U CN203707137U (en) | 2014-02-24 | 2014-02-24 | Active matrix organic light emitting diode array substrate and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103839973A (en) * | 2014-02-24 | 2014-06-04 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode array substrate, manufacturing method and display device |
| WO2020206778A1 (en) * | 2019-04-10 | 2020-10-15 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display device and manufacturing method therefor |
-
2014
- 2014-02-24 CN CN201420079006.8U patent/CN203707137U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103839973A (en) * | 2014-02-24 | 2014-06-04 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode array substrate, manufacturing method and display device |
| WO2015123915A1 (en) * | 2014-02-24 | 2015-08-27 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode array substrate, manufacturing method and display device |
| CN103839973B (en) * | 2014-02-24 | 2016-05-04 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode array base palte and preparation method and display unit |
| US9385171B2 (en) | 2014-02-24 | 2016-07-05 | Boe Technology Group Co., Ltd. | Active matrix organic light-emitting diode array substrate, manufacturing method thereof and display device including the same |
| WO2020206778A1 (en) * | 2019-04-10 | 2020-10-15 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display device and manufacturing method therefor |
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