CN203690902U - Real-time software and hardware two-level overcurrent protection device in battery management system - Google Patents
Real-time software and hardware two-level overcurrent protection device in battery management system Download PDFInfo
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Abstract
The utility model relates to the field of battery management system technology and specifically discloses a real-time software and hardware two-level overcurrent protection device in a battery management system. The real-time software and hardware two-level overcurrent protection device comprises a charging MOS driving circuit, a discharging MOS driving circuit and a current sampling circuit which are respectively connected with a microprocessor. The discharging MOS driving circuit is connected with a battery special overcurrent protection chip. The charging MOS driving circuit is connected with a charging MOS tube. The discharging MOS driving circuit is connected with a discharging MOS tube. One end of a sampling resistor is respectively connected with the discharging MOS tube, the battery special overcurrent protection chip and the current sampling circuit. The other end of the sampling resistor is grounded. A TVS diode is respectively connected with the charging MOS tube, the discharging MOS tube, the sampling resistor and the cathode connection end P-/C- of a charger. According to the real-time software and hardware two-level overcurrent protection device, the real-time software and hardware two-level overcurrent protection of a load and a battery group is realized, the performance is safe and reliable, the response speed is fast, a protection threshold can be set, and the device is flexible and convenient to use.
Description
Technical field
The utility model relates to battery management system technical field, especially relates to the real-time software and hardware two-stage overcurrent protective device in a kind of battery management system.
Background technology
Battery pack is of many uses in every field, is widely used in the equipment such as communication base station back-up source, energy storage cabinet, electric tool; As the battery management system of its protection corollary system that is absolutely necessary.In actual applications, in the larger occasion of some load currents, in the time producing partial short-circuit or other reason because load is inner and cause load current to exceed maximum permissible current (being overcurrent), if disconnecting consumers not in time, often easily cause load overheated or burn, thereby affect the life-span of whole battery pack.Reliable overcurrent protection measure is improved in employing can be once occur overcurrent, moment disconnecting consumers, thereby protection load and battery pack reduce infringement.
Existing battery pack overcurrent protection measure adopts the hardware protection (hardware circuit) of single battery special chip or single software control to protect as safety measure mostly, has the limited problem of reliability.Particularly single software control, although door value can arrange flexibly, relatively simple hardware circuit is protected, its reaction speed is slower.
Also do not have at present effective scheme to solve the problems referred to above.
Utility model content
The technical problem that the utility model solves is to provide a kind of overcurrent protective device of fast and reliable, is mainly used in the overcurrent protection in battery management system.The utility model, by input and protection output circuit, has been realized the real-time software and hardware two-stage overcurrent protection to load and battery pack, has overcome safety and the not high defect of reliability in prior art.The utility model performance safety is reliable, and reaction speed is fast, and protection thresholding can arrange, flexible and convenient to use, is easier to the person of being designed and grasps and apply.
In order to solve the problems of the technologies described above, the utility model provides the real-time software and hardware two-stage overcurrent protective device in a kind of battery management system; Comprise:
Microprocessor, charging MOS drive circuit, electric discharge MOS drive circuit, the special overcurrent protection chip of battery, current sampling circuit, sample resistance, charging metal-oxide-semiconductor, electric discharge metal-oxide-semiconductor and TVS diode, described charging MOS drive circuit, described electric discharge MOS drive circuit is connected with described microprocessor respectively with described current sampling circuit, described electric discharge MOS drive circuit is connected with the special overcurrent protection chip of described battery, described charging MOS drive circuit is connected with described charging metal-oxide-semiconductor, described electric discharge MOS drive circuit is connected with described electric discharge metal-oxide-semiconductor, one end of described sample resistance respectively with described electric discharge metal-oxide-semiconductor, the special overcurrent protection chip of described battery is connected with described current sampling circuit, the other end ground connection of described sample resistance, described TVS diode respectively with described charging metal-oxide-semiconductor, described electric discharge metal-oxide-semiconductor, the negative pole link P-/C-of described sample resistance and charger is connected.
Preferably, the quantity that discharges and recharges metal-oxide-semiconductor described in is no less than 2.
More preferably, the quantity of described sample resistance is no less than 1.
More preferably, described microprocessor comprises I/O interface, and described I/O interface is connected with described current sampling circuit with described charging MOS drive circuit, described electric discharge MOS drive circuit respectively.
More preferably, the unidirectional TVS diode that described TVS diode is 1 two-way TVS diode or 2 series connection.
More preferably, described current sampling circuit comprises operational amplifier IC1, resistance R 1, R2, R3 and R4, and capacitor C 1 and C2; Described sample resistance is connected with described resistance R 2 with described resistance R 1 respectively, described resistance R 1 is all connected with described capacitor C 1 with described resistance R 2, described capacitor C 1 is connected with the both positive and negative polarity of described operational amplifier IC1 respectively, described resistance R 3 is connected with described operational amplifier IC1, described operational amplifier IC1 is connected with described resistance R 4, one end of described capacitor C 2 is connected with described microprocessor with described resistance R 4 respectively, the other end ground connection of described capacitor C 2.
More preferably, described resistance R 1 is identical with described resistance R 2 resistances, the span of described resistance R 1 and described resistance R 2 is 100 ohm～10K ohm, the span of described resistance R 3 is 1K ohm～330K ohm, the span of described resistance R 4 is 100 ohm～330K ohm, and the span of described capacitor C 1 and described C2 is 0.01 microfarad～100 microfarad.
More preferably, described charging MOS drive circuit comprises resistance R 5, R6, R7, R8 and R9, diode D1 and metal-oxide-semiconductor M1 and M2; Described microprocessor is connected with described resistance R 5, one end of described resistance R 6 is all connected with described metal-oxide-semiconductor M1 with described resistance R 5, the other end ground connection of described resistance R 6, described resistance R 7 is connected with described metal-oxide-semiconductor M1, one end of described resistance R 8 is all connected with described metal-oxide-semiconductor M2 with described resistance R 7, the positive pole of another termination 12V power supply of described resistance R 8, described metal-oxide-semiconductor M2 is all connected with described resistance R 9 with described diode D1, and described diode D1 is connected with described charging metal-oxide-semiconductor.
More preferably, described electric discharge MOS drive circuit comprises resistance R 10, R11, R12, R13, R14, R15, R16 and R17, diode D2, triode Q1 and metal-oxide-semiconductor M3 and M4, described microprocessor is connected with described resistance R 10, one end of described resistance R 11 is all connected with described metal-oxide-semiconductor M3 with described resistance R 10, the other end ground connection of described resistance R 11, described resistance R 12 is connected with described metal-oxide-semiconductor M3, one end of described resistance R 13 is all connected with described metal-oxide-semiconductor M4 with described resistance R 12, the positive pole of another termination 12V power supply of described resistance R 13, described resistance R 14 is all connected with described metal-oxide-semiconductor M4 with described resistance R 15, described resistance R 14 is connected with described diode D2, described resistance R 15, one end of described resistance R 16 is all connected with the special overcurrent protection chip of described battery with described triode Q1, the other end ground connection of described resistance R 16, described resistance R 17 is connected with described triode Q1, described resistance R 17 is all connected with described electric discharge metal-oxide-semiconductor with described diode D2.
More preferably, the special overcurrent protection chip of described battery adopts S8239-A chip.
More preferably, described sample resistance adopts milliohm level current sampling resistor, comprises plug-in unit resistance or Chip-R.
The course of work of the present utility model is:
The operating current signal collecting is given respectively overcurrent protection chip and sample circuit by sample resistance, and sample circuit is given microprocessor the current signal of conversion again.Overcurrent protection chip and microprocessor judge according to the current signal of input; if electric current reaches corresponding protection enabling gate limit value; overcurrent protection chip output electric discharge MOS cut-off signals is given electric discharge MOS drive circuit; microprocessor respectively output mos cut-off signals is given charging MOS drive circuit and electric discharge MOS drive circuit, with disconnecting consumers.
Wherein, I/O is the abbreviation of input/output, i.e. input/output port.Each equipment can have a special I/O address, is used for processing the input/output information of oneself.CPU and external equipment, memory be connected and exchanges data all needs to realize by interface equipment, the former is called as I/O interface, the latter is called as memory interface.Memory is worked conventionally under the Synchronization Control of CPU, and interface circuit is fairly simple; And I/O equipment is various in style, its corresponding interface circuit is also different, therefore, mentions traditionally interface and only refers to I/O interface.The function of described I/O interface chip is to be responsible for realizing CPU by system bus, I/O circuit and ancillary equipment to be linked together.These chips are mostly integrated circuits, input different orders and parameter by CPU, and control relevant I/O circuit and the corresponding operation of simple peripheral hardware do, common interface chip is as Timer/Counter, interrupt control unit, dma controller, parallel interface, A/D mouth etc.
Wherein, described metal-oxide-semiconductor is metal (metal)-oxide (oxid)-semiconductor (semiconductor) field-effect transistor, or claims it is metal-insulator (insulator)-semiconductor.The source of metal-oxide-semiconductor and drain can exchange, and they form NXing district in P type backgate.As a rule, this Liang Ge district is the same, even if the performance that also can not affect device is exchanged at two ends.It is symmetrical that such device is considered to.
Wherein, described TVS pipe is the abbreviation of Transient Suppression Diode (Transient Voltage Suppressor).Its feature is: response speed fast especially (for ps level); Resistance to surge impact ability is poor compared with discharge tube and piezo-resistance, and its 10/1000 μ s wave impulse power is from 400W～30KW, and pulse peak current is from 0.52A～544A; Breakdown potential is pressed with the series of values from 6.8V～550V, and the circuit of being convenient to various different voltages uses.TVS pipe has unidirectional and two-way dividing, and the characteristic of unidirectional TVS pipe is similar to voltage stabilizing didoe, and the characteristic of two-way TVS pipe is equivalent to two voltage stabilizing didoe differential concatenations.
Wherein, the special overcurrent protection chip of described battery is selected the S8239-A family chip of Seiko, its built-in high-accuracy voltage testing circuit and delay circuit, and the overcurrent that is suitable for the rechargeable battery pack of multiple batteries series connection monitors and protection; Judge the size of electric current by voltage detecting circuit, decide the operate time of protection by delay circuit.8239 chips integrated mobile detection function (OV7949 OV7950 Korea S PC1030 do not there is this function), circuit is more succinct, provides cost savings, and has also reduced failure rate, realizes more easily plate miniaturization.High definition cost performance is high, and power consumption is less, and power consumption can be accomplished 65 milliamperes of left and right.8239 chips have that resolution is high, noise is low, dark current is little and the plurality of advantages such as sensitive volume is large, and the patented technology that this transducer has can provide higher fill factor, curve factor number for CMOS-APS.Be confined to the traditional APS pixel in diode area with photosensitive area, most of area that Sarnoff method can be processed standard CMOS chip changes photosensitive area into, is the strong guarantee that product possesses ISO up to 78% fill factor, curve factor.Since emerging, this chip solution is widely used by the security protection company of most countries.
Wherein, described sample resistance comprises plug-in unit resistance or Chip-R, and the characteristic of described plug-in unit resistance and Chip-R is low-temperature coefficient, high precision, ultralow resistance, high-power.The material of described plug-in unit resistance and Chip-R is generally alloy, constantan or copper-manganese.The volume and weight of Chip-R only has 1/10 left and right of traditional plug-in unit resistance, after generally adopting SMT, and electronic product volume-diminished 40%～60%, weight saving 60%～80%.Chip-R reliability is high, vibration resistance is strong.Welding point defect rate is low, and high frequency characteristics is good, has reduced electromagnetism and radio frequency interference, easily is automated, and enhances productivity.Reduce costs and reach 30%～50%, save material, the energy, equipment, manpower, time etc.The advantage of Chip-R is that performance is good, and volume is little, and shortcoming is that power is little.The advantage of plug-in unit resistance is that specification is many, and power is large, and shortcoming is that volume is large.
Wherein, the central processing unit of a slice or several large scale integrated circuit compositions for described microprocessor.These circuit are carried out the function of control assembly and arithmetic logic unit.Microprocessor, compared with traditional central processing unit, has the advantages such as little, the lightweight and easy modularization of volume.The element of microprocessor has: register file, arithmetic unit, sequential control circuit, and data and address bus.Microprocessor can complete instruction fetch, carry out instruction, and with the operation such as extraneous memory and logical block exchange message, be the s operation control part of microcomputer.It can form microcomputer with memory and peripheral circuit chip.
Wherein, described operational amplifier IC1 (being called for short " amplifier ") is to have the very circuit unit of high-amplification-factor.In side circuit, conventionally jointly form certain functional module in conjunction with feedback network.Owing to being applied in early days in simulation computer, in order to realize mathematical operation, therefore gain the name " operational amplifier ".Amplifier is the circuit unit of a name of the angle from function, can be realized by discrete device, also can realize in the middle of semiconductor chip.Along with the development of semiconductor technology, most amplifier is to exist with the form of single-chip.Amplifier of a great variety, is widely used in the middle of electron trade.
The utility model compared with prior art, has following beneficial effect:
The utility model provides the real-time software and hardware two-stage overcurrent protective device in a kind of battery management system; the utility model has adopted by microprocessor, charging MOS drive circuit, electric discharge MOS drive circuit, the special overcurrent protection chip of battery, current sampling circuit, sample resistance, has discharged and recharged input and protection output circuit that metal-oxide-semiconductor and TVS diode form; realized the real-time software and hardware two-stage overcurrent protection to load and battery pack, wherein software protection can flexible configuration shutter limit value and operate time.The utility model performance safety is reliable, and reaction speed is fast, and protection thresholding can arrange, flexible and convenient to use, can not be designed person well and grasps and be applied in reality, has dissemination widely.
Brief description of the drawings
Fig. 1 exemplarily shows the utility model structural representation;
Fig. 2 exemplarily shows current sampling circuit structural representation;
Fig. 3 exemplarily shows charging MOS driving circuit structure schematic diagram;
Fig. 4 exemplarily shows electric discharge MOS driving circuit structure schematic diagram.
Reference numeral shown in Fig. 1～Fig. 4 is as follows: 1, microprocessor, 2, charging MOS drive circuit, 3, electric discharge MOS drive circuit; 4, the special overcurrent protection chip of battery, 5, current sampling circuit, 6, sample resistance; 7, charging metal-oxide-semiconductor, 8, electric discharge metal-oxide-semiconductor, 9, TVS diode.
Embodiment
For the technical problem that the utility model solves, the technical scheme providing are provided better, below in conjunction with drawings and Examples, the utility model is further elaborated.Specific embodiment described herein is only in order to explain enforcement of the present utility model, but and is not used in restriction the utility model.
In order to solve the problems of the technologies described above, the utility model provides the real-time software and hardware two-stage overcurrent protective device in a kind of battery management system,
In a preferred embodiment, Fig. 1 exemplarily shows structural representation of the present utility model; Comprise:.
In the embodiment being more preferably, described in discharge and recharge metal-oxide-semiconductor 8 quantity be no less than 2.
In the embodiment being more preferably, the quantity of described sample resistance 6 is no less than 1.
In the embodiment being more preferably, described microprocessor 1 comprises I/O interface, and described I/O interface is connected with described current sampling circuit 5 with described charging MOS drive circuit 2, described electric discharge MOS drive circuit 3 respectively.
In the embodiment being more preferably, described TVS diode 9 is the unidirectional TVS diode of 1 two-way TVS diode or 2 series connection.
In the embodiment being more preferably, Fig. 2 exemplarily shows current sampling circuit 5 structural representations; Described current sampling circuit 5 comprises operational amplifier IC1, resistance R 1, R2, R3 and R4, and capacitor C 1 and C2; Described sample resistance 6 is connected with described resistance R 2 with described resistance R 1 respectively, described resistance R 1 is all connected with described capacitor C 1 with described resistance R 2, described capacitor C 1 is connected with the both positive and negative polarity of described operational amplifier IC1 respectively, described resistance R 3 is connected with described operational amplifier IC1, described operational amplifier IC1 is connected with described resistance R 4, one end of described capacitor C 2 is connected with described microprocessor 1 with described resistance R 4 respectively, the other end ground connection of described capacitor C 2.
In the embodiment being more preferably, described resistance R 1 is identical with described resistance R 2 resistances, the span of described resistance R 1 and described resistance R 2 is 100 ohm～10K ohm, the span of described resistance R 3 is 1K ohm～330K ohm, the span of described resistance R 4 is 100 ohm～330K ohm, and the span of described capacitor C 1 and described C2 is 0.01 microfarad～100 microfarad.
In the embodiment being more preferably, Fig. 3 exemplarily shows charging MOS drive circuit 2 structural representations; Described charging MOS drive circuit 2 comprises resistance R 5, R6, R7, R8 and R9, diode D1 and metal-oxide-semiconductor M1 and M2; Described microprocessor 1 is connected with described resistance R 5, one end of described resistance R 6 is all connected with described metal-oxide-semiconductor M1 with described resistance R 5, the other end ground connection of described resistance R 6, described resistance R 7 is connected with described metal-oxide-semiconductor M1, one end of described resistance R 8 is all connected with described metal-oxide-semiconductor M2 with described resistance R 7, the positive pole of another termination 12V power supply of described resistance R 8, described metal-oxide-semiconductor M2 is all connected with described resistance R 9 with described diode D1, and described diode D1 is connected with described charging metal-oxide-semiconductor 7.
In the embodiment being more preferably, Fig. 4 exemplarily shows electric discharge MOS drive circuit 3 structural representations, described electric discharge MOS drive circuit 3 comprises resistance R 10, R11, R12, R13, R14, R15, R16 and R17, diode D2, triode Q1 and metal-oxide-semiconductor M3 and M4, described microprocessor 1 is connected with described resistance R 10, one end of described resistance R 11 is all connected with described metal-oxide-semiconductor M3 with described resistance R 10, the other end ground connection of described resistance R 11, described resistance R 12 is connected with described metal-oxide-semiconductor M3, one end of described resistance R 13 is all connected with described metal-oxide-semiconductor M4 with described resistance R 12, the positive pole of another termination 12V power supply of described resistance R 13, described resistance R 14 is all connected with described metal-oxide-semiconductor M4 with described resistance R 15, described resistance R 14 is connected with described diode D2, described resistance R 15, one end of described resistance R 16 is all connected with the special overcurrent protection chip 4 of described battery with described triode Q1, the other end ground connection of described resistance R 16, described resistance R 17 is connected with described triode Q1, described resistance R 17 is all connected with described electric discharge metal-oxide-semiconductor 8 with described diode D2.
In the embodiment being more preferably, the special overcurrent protection chip 4 of described battery adopts S8239-A chip.
In the embodiment being more preferably, described sample resistance 6 adopts milliohm level current sampling resistor, comprises plug-in unit resistance or Chip-R.
Specific embodiment:
The course of work of the present utility model is:
The operating current signal collecting is given respectively overcurrent protection chip and sample circuit by sample resistance, and sample circuit is given microprocessor the current signal of conversion again.Overcurrent protection chip and microprocessor judge according to the current signal of input; if electric current reaches corresponding protection enabling gate limit value; overcurrent protection chip output electric discharge MOS cut-off signals is given electric discharge MOS drive circuit; microprocessor respectively output mos cut-off signals is given charging MOS drive circuit and electric discharge MOS drive circuit, with disconnecting consumers.
According to practical application request; system arranges two overcurrent protection threshold values; less corresponding software protection enabling gate limit value (can flexible configuration threshold value and operate time), larger corresponding hardware (overcurrent protection special chip) shutter limit value.The operating current signal collecting is given respectively overcurrent protection chip and sample circuit by sample resistance, and sample circuit is given microprocessor the current signal of conversion again.Overcurrent protection chip and microprocessor judge according to the current signal of input; if electric current reaches corresponding protection enabling gate limit value; overcurrent protection chip output electric discharge MOS cut-off signals is given electric discharge MOS drive circuit; microprocessor respectively output mos cut-off signals is given charging MOS drive circuit and electric discharge MOS drive circuit, with disconnecting consumers.
More than by preferred and description that specific embodiment is detailed the utility model; but those skilled in the art should be understood that; the utility model is not limited to the above embodiment; all within general principle of the present utility model; any amendment of doing, combine and be equal to replacement etc., within being all included in protection range of the present utility model.
Claims (10)
1. the real-time software and hardware two-stage overcurrent protective device in a battery management system, it is characterized in that, comprising: microprocessor, charging MOS drive circuit, electric discharge MOS drive circuit, the special overcurrent protection chip of battery, current sampling circuit, sample resistance, charging metal-oxide-semiconductor, electric discharge metal-oxide-semiconductor and TVS diode, described charging MOS drive circuit, described electric discharge MOS drive circuit is connected with described microprocessor respectively with described current sampling circuit, described electric discharge MOS drive circuit is connected with the special overcurrent protection chip of described battery, described charging MOS drive circuit is connected with described charging metal-oxide-semiconductor, described electric discharge MOS drive circuit is connected with described electric discharge metal-oxide-semiconductor, one end of described sample resistance respectively with described electric discharge metal-oxide-semiconductor, the special overcurrent protection chip of described battery is connected with described current sampling circuit, the other end ground connection of described sample resistance, described TVS diode respectively with described charging metal-oxide-semiconductor, described electric discharge metal-oxide-semiconductor, the negative pole link P-/C-of described sample resistance and charger is connected.
2. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, is characterized in that, described in discharge and recharge metal-oxide-semiconductor quantity be no less than 2; The quantity of described sample resistance is no less than 1.
3. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1; it is characterized in that; described microprocessor comprises I/O interface, and described I/O interface is connected with described current sampling circuit with described charging MOS drive circuit, described electric discharge MOS drive circuit respectively.
4. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, is characterized in that, described TVS diode is the unidirectional TVS diode of 1 two-way TVS diode or 2 series connection.
5. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, is characterized in that, described current sampling circuit comprises operational amplifier IC1, resistance R 1, R2, R3 and R4, and capacitor C 1 and C2; Described sample resistance is connected with described resistance R 2 with described resistance R 1 respectively, described resistance R 1 is all connected with described capacitor C 1 with described resistance R 2, described capacitor C 1 is connected with the both positive and negative polarity of described operational amplifier IC1 respectively, described resistance R 3 is connected with described operational amplifier IC1, described operational amplifier IC1 is connected with described resistance R 4, one end of described capacitor C 2 is connected with described microprocessor with described resistance R 4 respectively, the other end ground connection of described capacitor C 2.
6. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 5; it is characterized in that; described resistance R 1 is identical with described resistance R 2 resistances; the span of described resistance R 1 and described resistance R 2 is 100 ohm～10K ohm; the span of described resistance R 3 is 1K ohm～330K ohm; the span of described resistance R 4 is 100 ohm～330K ohm, and the span of described capacitor C 1 and described C2 is 0.01 microfarad～100 microfarad.
7. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, is characterized in that, described charging MOS drive circuit comprises resistance R 5, R6, R7, R8 and R9, diode D1 and metal-oxide-semiconductor M1 and M2; Described microprocessor is connected with described resistance R 5, one end of described resistance R 6 is all connected with described metal-oxide-semiconductor M1 with described resistance R 5, the other end ground connection of described resistance R 6, described resistance R 7 is connected with described metal-oxide-semiconductor M1, one end of described resistance R 8 is all connected with described metal-oxide-semiconductor M2 with described resistance R 7, the positive pole of another termination 12V power supply of described resistance R 8, described metal-oxide-semiconductor M2 is all connected with described resistance R 9 with described diode D1, and described diode D1 is connected with described charging metal-oxide-semiconductor.
8. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, it is characterized in that, described electric discharge MOS drive circuit comprises resistance R 10, R11, R12, R13, R14, R15, R16 and R17, diode D2, triode Q1 and metal-oxide-semiconductor M3 and M4, described microprocessor is connected with described resistance R 10, one end of described resistance R 11 is all connected with described metal-oxide-semiconductor M3 with described resistance R 10, the other end ground connection of described resistance R 11, described resistance R 12 is connected with described metal-oxide-semiconductor M3, one end of described resistance R 13 is all connected with described metal-oxide-semiconductor M4 with described resistance R 12, the positive pole of another termination 12V power supply of described resistance R 13, described resistance R 14 is all connected with described metal-oxide-semiconductor M4 with described resistance R 15, described resistance R 14 is connected with described diode D2, described resistance R 15, one end of described resistance R 16 is all connected with the special overcurrent protection chip of described battery with described triode Q1, the other end ground connection of described resistance R 16, described resistance R 17 is connected with described triode Q1, described resistance R 17 is all connected with described electric discharge metal-oxide-semiconductor with described diode D2.
9. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, is characterized in that, the special overcurrent protection chip of described battery adopts S8239-A chip.
10. the real-time software and hardware two-stage overcurrent protective device in battery management system according to claim 1, is characterized in that, described sample resistance adopts milliohm level current sampling resistor, comprises plug-in unit resistance or Chip-R.
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| CN106230060A (en) * | 2016-08-30 | 2016-12-14 | 常州格力博有限公司 | Charge protector and guard method thereof |
| CN106684976A (en) * | 2016-12-19 | 2017-05-17 | 江苏嘉钰新能源技术有限公司 | Power charging and discharging device for backup power source using MOS tubes |
| CN106786928A (en) * | 2016-12-29 | 2017-05-31 | 惠州市蓝微新源技术有限公司 | A kind of BMS charge and discharge controls protection circuit |
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| TWI657472B (en) * | 2015-02-16 | 2019-04-21 | 陳莎莉 | Composite protection component, protection circuit, rechargeable battery pack |
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| TWI657472B (en) * | 2015-02-16 | 2019-04-21 | 陳莎莉 | Composite protection component, protection circuit, rechargeable battery pack |
| CN106230060A (en) * | 2016-08-30 | 2016-12-14 | 常州格力博有限公司 | Charge protector and guard method thereof |
| CN106684976A (en) * | 2016-12-19 | 2017-05-17 | 江苏嘉钰新能源技术有限公司 | Power charging and discharging device for backup power source using MOS tubes |
| CN106786928A (en) * | 2016-12-29 | 2017-05-31 | 惠州市蓝微新源技术有限公司 | A kind of BMS charge and discharge controls protection circuit |
| CN106786928B (en) * | 2016-12-29 | 2023-10-20 | 惠州市蓝微新源技术有限公司 | BMS charge-discharge control protection circuit |
| CN109374155A (en) * | 2018-09-26 | 2019-02-22 | 郑州云海信息技术有限公司 | A kind of network interface card temperature-detecting device and detection method |
| CN113906648A (en) * | 2019-07-12 | 2022-01-07 | 华为技术有限公司 | Power supply protection method and system with power supply protection function |
| CN110571891A (en) * | 2019-10-16 | 2019-12-13 | 深圳市誉娇诚科技有限公司 | Secondary protection circuit for charging and discharging hardware of lithium ion battery |
| CN111030223A (en) * | 2019-12-20 | 2020-04-17 | 苏州妙益科技股份有限公司 | Charging and discharging MOS (metal oxide semiconductor) protection circuit |
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