CN203690458U - Ultra wide band wave limiting filter - Google Patents
Ultra wide band wave limiting filter Download PDFInfo
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- CN203690458U CN203690458U CN201320878470.9U CN201320878470U CN203690458U CN 203690458 U CN203690458 U CN 203690458U CN 201320878470 U CN201320878470 U CN 201320878470U CN 203690458 U CN203690458 U CN 203690458U
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Abstract
An ultra wide band wave limiting filter comprises an upper metal layer which is arranged at an upper part, and a lower metal layer which is arranged at a lower part. The upper metal layer is etched by a first input / output micro-strip line and a second input / output micro-strip line; the lower metal layer is etched by a coplanar waveguide structure and a T-shape defected ground structure; the first input / output micro-strip line and the second input / output micro-strip line employ a metal structure; and the coplanar waveguide structure and the T-shape defected ground structure employ a metal slot structure. Therefore, the miniature ultra wideband band-pass filter which is high in performance and low in cost is provided.
Description
Technical field
The invention belongs to filter apparatus technical field, be specifically related to a kind of ultra broadband notch filter.
Background technology
At present from the open 3.1GHz of FCC (FCC) decision to 10.6GHz, since unwarranted frequency range, the Technology of Ultra has obtained very big concern.Radio ultra wide band system has many advantages, such as higher message transmission rate and lower transmitting power.Wherein ultra-wide band filter is one of important component part of radio ultra wide band system.
Summary of the invention
Object of the present invention provides a kind of ultra broadband notch filter, comprise superposed upper metal layers, in described upper metal layers, be etched with the first input and output microstrip line and the second input and output microstrip line, also comprise in addition the lower metal layer that is positioned at bottom, in lower metal layer, be etched with coplanar waveguide structure and T-shaped defect ground structure, described the first input and output microstrip line and the second input and output microstrip line are metal structure, and coplanar waveguide structure and T-shaped defect ground structure are metal slit structure.The ultra wide band bandpass filter of a kind of high-performance, low cost, miniaturization is so just provided.
In order to overcome deficiency of the prior art, the invention provides a kind of solution of ultra broadband notch filter, specific as follows:
A kind of T-shaped defect ground ultra-wide band filter, comprise superposed upper metal layers, in described upper metal layers, be etched with the first input and output microstrip line 1 and the second input and output microstrip line 2, also comprise in addition the lower metal layer that is positioned at bottom, in lower metal layer, be etched with coplanar waveguide structure 3 and T-shaped defect ground structure 4, the first described input and output microstrip line 1 and the second input and output microstrip line 2 are metal structure, and coplanar waveguide structure 3 and T-shaped defect ground structure 4 are metal slit structure.
Apply such scheme of the present invention, the remarkable advantage of T-shaped defect of the present invention ground ultra-wide band filter is: (1) relative bandwidth is large, 3dB free transmission range be 2.8GHz to 10.6GHz, 3dB relative bandwidth is about 116%, has met the demand of ultra wide band bandpass filter; (2) can make by pcb board technique, overall size is 10mm × 20mm, and volume is little lightweight, easy to manufacture and cost is low.
Accompanying drawing explanation
Figure l is the structural representation of the first input and output microstrip line of the present invention and the second input and output microstrip line.
Fig. 2 is the structural representation of coplanar waveguide structure of the present invention and T-shaped defect ground structure.
Fig. 3 is the S parameter Electromagnetic Simulation result figure of T-shaped defect of the present invention ground ultra-wide band filter.
Embodiment
Below in conjunction with accompanying drawing, summary of the invention is described further:
Shown in seeing figures.1.and.2, T-shaped defect ground ultra-wide band filter: comprise superposed upper metal layers, in described upper metal layers, be etched with the first input and output microstrip line 1 and the second input and output microstrip line 2, also comprise in addition the lower metal layer that is positioned at bottom, in lower metal layer, be etched with coplanar waveguide structure 3 and T-shaped defect ground structure 4, the first described input and output microstrip line 1 and the second input and output microstrip line 2 are metal structure, and coplanar waveguide structure 3 and T-shaped defect ground structure 4 are metal slit structure.
The etching mode that is etched with the first input and output microstrip line 1 and the second input and output microstrip line 2 in described upper metal layers is circuit carving erosion mode; To be etched with the etching mode of coplanar waveguide structure 3 and T-shaped defect ground structure 4 be circuit carving erosion mode to lower metal layer in addition.
The first described input and output microstrip line 1 entirety is plates, connects a T shape coupled microstrip line 1-2 form by the first matched line 1-1, and described the first input and output microstrip line 1 and the second input and output microstrip line 2 are mirror image.
The characteristic impedance of the first described matched line 1-1 is 50 ohm.
Described coplanar waveguide structure 3 comprises one and connects gap 3-1, two U-shaped gap 3-2 and two L shaped gap 3-3; Described T-shaped defect ground structure 4 comprises two square gap 4-1, an inverted T-shaped gap 4-2, connected one end of the U-shaped gap 3-2 of two mirror image symmetry arrangement by connection gap 3-1, the L shaped gap 3-3 that each U-shaped gap 3-2 other end is corresponding with it is connected, 4-2You transverse slot, inverted T-shaped gap connects to form with vertical gap, square gap 4-1 is connected with the transverse slot of inverted T-shaped gap 4-2, and the vertical gap of inverted T-shaped gap 4-2 is positioned at 3-3 middle, two L shaped gaps.
The Central Symmetry point of two square gap 4-1 in the Central Symmetry point of the matched line 1-1 of the first input and output microstrip line in described upper metal layers and the matched line 2-1 of the second input and output microstrip line and lower metal layer, 2 lines are vertical with medium version.
The square gap 4-1 length of side of described T-shaped defect ground structure 4 is 0.5mm.
The transverse slot width of the inverted T-shaped gap 4-2 of described T-shaped defect ground structure 4 is 0.1mm, and length is 2.2～2.4mm.
The vertical gap width of the inverted T-shaped gap 4-2 of described T-shaped defect ground structure 4 is 0.1mm, and length is 3.8～4.0mm.
The T-shaped defect of the present invention ground ultra-wide band filter adopts the dielectric-slab that relative dielectric constant is 3.38, thickness is 0.508mm, and available microwave pcb board technique realizes, thus there is extreme high reliability, and cost is lower.
In conjunction with the S Parameter Map of the T-shaped defect of this of Fig. 3 ground ultra-wide band filter, comprise forward transmission coefficient S21, input reflection coefficient S11,3dB free transmission range be 2.8GHz to 10.6GHz, 3dB relative bandwidth is about 116%; Overall size is 10mm × 20mm.
In sum, the T-shaped defect of the present invention ground ultra-wide band filter relative bandwidth is large, and ultra broadband has met the demand of ultra wide band bandpass filter; Can make by pcb board technique, volume is little lightweight, easy to manufacture and cost is low, is applicable in the wireless communication system such as ultra-wideband communication system, mobile communication terminal.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, according to technical spirit of the present invention, within the spirit and principles in the present invention, the any simple modification that above embodiment is done, be equal to replacement and improvement etc., within all still belonging to the protection range of technical solution of the present invention.
Claims (10)
1. a ultra broadband notch filter, it is characterized in that comprising superposed upper metal layers, in described upper metal layers, be etched with the first input and output microstrip line (1) and the second input and output microstrip line (2), also comprise in addition the lower metal layer that is positioned at bottom, in lower metal layer, be etched with coplanar waveguide structure (3) and T-shaped defect ground structure (4), described the first input and output microstrip line (1) and the second input and output microstrip line (2) are metal structure, and coplanar waveguide structure (3) and T-shaped defect ground structure (4) are metal slit structure.
2. according to the ultra broadband notch filter described in claim 1, the etching mode that is etched with the first input and output microstrip line (1) and the second input and output microstrip line (2) in the upper metal layers described in it is characterized in that is circuit carving erosion mode; To be etched with the etching mode of coplanar waveguide structure (3) and T-shaped defect ground structure (4) be circuit carving erosion mode to lower metal layer in addition.
3. according to the ultra broadband notch filter described in claim 1, it is characterized in that the first described input and output microstrip line (1) entirety is plates, connect a T shape coupled microstrip line (1-2) by the matched line (1-1) of the first input and output microstrip line (1) and form, the first described input and output microstrip line (1) is mirror image with the second input and output microstrip line (2).
4. according to the ultra broadband notch filter described in claim 3, it is characterized in that the characteristic impedance of the matched line (1-1) of the first input and output microstrip line (1) is 50 ohm.
5. according to the ultra broadband notch filter described in claim 4, the Central Symmetry point in two the square gaps (4-1) in the matched line (1-1) of the first input and output microstrip line in the upper metal layers described in it is characterized in that and the Central Symmetry point of the matched line (2-1) of the second input and output microstrip line and lower metal layer, 2 lines are vertical with medium version.
6. according to the ultra broadband notch filter described in claim 1, it is characterized in that described coplanar waveguide structure (3) comprises one and connects gap (3-1), two U-shaped gaps (3-2) and two L shaped gaps (3-3); Described T-shaped defect ground structure (4) comprises two square gaps (4-1) and an inverted T-shaped gap (4-2), connected the one end in the U-shaped gap (3-2) of two mirror image symmetry arrangement by connection gap (3-1), the L shaped gap (3-3) that each U-shaped gap (3-2) other end is corresponding with it is connected, inverted T-shaped gap (4-2) is connected to form by transverse slot and vertical gap, square gap (4-1) is connected with the transverse slot of inverted T-shaped gap (4-2), and the vertical gap of inverted T-shaped gap (4-2) is positioned at middle, two L shaped gaps (3-3).
7. according to the ultra broadband notch filter described in claim 1, it is characterized in that the square gap 4-1 length of side of described T-shaped defect ground structure (4) is 0.5mm.
8. according to the ultra broadband notch filter described in claim 1, it is characterized in that the transverse slot width of the inverted T-shaped gap 4-2 of described T-shaped defect ground structure (4) is 0.1mm, length is 2.2～2.4mm.
9. according to the ultra broadband notch filter described in claim 1, it is characterized in that the vertical gap width in the inverted T-shaped gap (4-2) of described T-shaped defect ground structure (4) is 0.1mm, length is 3.8～4.0mm.
10. according to the ultra broadband notch filter described in claim 1, it is characterized in that described T-shaped defect ground ultra-wide band filter adopts the dielectric-slab that relative dielectric constant is 3.38, thickness is 0.508mm, can realize by microwave pcb board technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320878470.9U CN203690458U (en) | 2013-12-29 | 2013-12-29 | Ultra wide band wave limiting filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320878470.9U CN203690458U (en) | 2013-12-29 | 2013-12-29 | Ultra wide band wave limiting filter |
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| CN203690458U true CN203690458U (en) | 2014-07-02 |
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| CN201320878470.9U Expired - Fee Related CN203690458U (en) | 2013-12-29 | 2013-12-29 | Ultra wide band wave limiting filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715482A (en) * | 2013-12-29 | 2014-04-09 | 南京邮电大学 | Defected ground coplanar waveguide ultra wide band limiting filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715482A (en) * | 2013-12-29 | 2014-04-09 | 南京邮电大学 | Defected ground coplanar waveguide ultra wide band limiting filter |
| CN103715482B (en) * | 2013-12-29 | 2016-06-08 | 南京邮电大学 | A kind of defect ground coplanar waveguide ultra wide band notch filter |
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Granted publication date: 20140702 Termination date: 20151229 |
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