CN203674234U - Welding strip used for solar cell - Google Patents
Welding strip used for solar cell Download PDFInfo
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- CN203674234U CN203674234U CN201420009889.5U CN201420009889U CN203674234U CN 203674234 U CN203674234 U CN 203674234U CN 201420009889 U CN201420009889 U CN 201420009889U CN 203674234 U CN203674234 U CN 203674234U
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- conducting base
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- 238000003466 welding Methods 0.000 title claims abstract description 190
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 3
- 238000009826 distribution Methods 0.000 claims description 10
- 230000002146 bilateral effect Effects 0.000 claims description 5
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 26
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 63
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 14
- 238000005476 soldering Methods 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000010422 painting Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 210000003850 cellular structure Anatomy 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000636 Ce alloy Inorganic materials 0.000 description 1
- 229910001074 Lay pewter Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- NZYYYKTZOWEGLS-UHFFFAOYSA-N [Sn].[Ce] Chemical compound [Sn].[Ce] NZYYYKTZOWEGLS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000006317 isomerization reaction Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to a welding strip used for a solar cell. The welding strip used for the solar cell comprises a conductive base-band which is a metal simple substance or an alloy material, and possesses upper and lower two wide surfaces. A plurality of grooves are pressed on the two wide surfaces of the conductive base-band, base-band planes are formed among the adjacent grooves, and the area proportion of the total area of the base-band planes of the same one wide surface and the wide surfaces of the conductive base-band is between 25% and 75%. According to the utility model, by limiting the occupied area proportion of the total area of the base-band plane and the wide surfaces of the conductive base-band, the welding area is guaranteed effectively, thereby guaranteeing the welding soundness. By limiting the depths of the grooves, and within the depth range, the pressing of the grooves does not influence a relative surface of the base-band on which the grooves are pressed, and the grooves can be retained furthest after welding, and are not totally filled by solders, especially for manual welding. The actual power of assemblies is improved further while satisfying the welding requirement and reducing internal stress.
Description
Technical field
The utility model belongs to the welding processing technique field for solar cell, particularly a kind of welding for solar cell.
Background technology
Along with the fast development of World Economics, energy resource consumption is increasing, and countries in the world are the application of demand new forms of energy and universal all.The greenhouse gas effect causing due to CO2 emission causes global warming and causes natural calamity, and countries in the world are especially strong to the demand of clean regenerative resource.Since the global crisis causing in U.S.'s subprime crisis in 2007 spreads and expands, for stimulating economic growth, each state has all passed through more positive encouragement and has used the measure of regenerative resource.U.S.'s Obama administration proposes to invest 1,500 hundred million dollars for clean energy resource at coming 10 years; European Union's target setting accounts for regenerative resource to use the ratio of the energy to bring up to 20% at the year two thousand twenty; Japan proposes to make more than 70% New Dwelling that solar panel (about 70GW) is installed in the year two thousand thirty.For alleviating photovoltaic domestic demand deficiency, on March 26th, 2009, China Ministry of Finance announces will promote to implement " solar roof project " demonstration project.The Ministry of Finance, house and town and country construction portion combine clearly proposition in appearance " about the implementation guideline of accelerating to advance solar photoelectric Application in Building ", implement " solar roof project " to, photoelectricity Application in Building demonstration project is given fund subsidy, encourages technological progress to put into effect a series of principal measures such as relevant financial support policy, the support on policy of strengthen construction field to scientific and technical innovation, encouragement local government.Present stage is actively pushed forward the photoelectricity architecture-integral demonstrations such as solar energy roof, photovoltaic curtain wall in economically developed, the good big and medium-sized cities of Industry Foundation; Actively be supported in rural area and the generating of remote districts development off-grid type, the pertinent regulations such as implement that power transmission is gone to the countryside, have indicated direction to especially the application of heliotechnics.Take photoelectricity architecture-integrals such as solar energy roof, photovoltaic curtain walls as breach, may allow in a short time people see and many benefits of applied solar energy also be conducive to spread from now on, excite the enthusiasm of capital of property investment field of solar energy.The new forms of energy policy of various countries perhaps will become next our after this one of the important policies of 15 years world developments that affect.Copenhagen Climate Conference of 2009 has waken, strengthened people again up pays close attention to the consciousness of clean energy resource.Follow the application of new forms of energy and popularize, the rapid growth impetus of photovoltaic industry is further strengthened and is paid attention to.
Welding is the important raw and processed materials in welding photovoltaic component process, and the quality of welding quality is by directly having influence on the collection efficiency of photovoltaic module electric current, very large to the power influences of photovoltaic module.How, by the isomerization of welding, increase the conversion ratio of cell piece, reduce fragment rate, be one of problem of welding industry research always.
Chinese patent CN101789452A has provided a kind of tin-coated welding strip, and it comprises the painting tin layer on copper strips and surface thereof, is coated with tin layer surface and has equally distributed hole shape body.This welding makes sunlight, in the shape body of hole, diffuse reflection occur to a certain extent, has improved the energy of accepting sunlight.But diffuse reflection only occurs its hole shape body, the sunlight ratio that is reflected back cell piece is very little, and the conversion ratio of raising is limited; In addition, its pit is to prepare in painting tin process, can produce inhomogeneous solder layer, and can produce the phenomenon not firm with welding of battery film, occurs rosin joint.
Chinese patent CN102569470A has provided a kind of at the surperficial V-type groove of preparing perpendicular to welding length direction of welding, reduces the hidden of cell piece split and fragment rate with this.But this patent welding V-type groove is perpendicular to significantly spacing of nothing between length direction and V-type groove, and therefore this welding is unstable when with welding of battery film, not prison welding.
Utility model content
The technical problems to be solved in the utility model is: cannot efficiently sunlight be reflexed to cell piece in order to overcome the existing welding for solar cell, even if there is irreflexive pit of generation on welding surface, it is lower that it often reflects ratio, and the manufacture of pit can affect the quality of welding, make welding produce projection with the opposite face of pit; Simultaneously, the quantity of pit has affected the deficiency of the firm welding of welding to a great extent, the utility model provides a kind of welding for solar cell, increase the sunlight reflecting through welding in the glass of photovoltaic cell component and the ratio of air interface layer generation total reflection, the sunlight that total reflection occurs participates in opto-electronic conversion again, thereby the power of battery component is improved to 0.5%-2.5%, and can reduce to a certain extent the internal stress after solar battery sheet welding, thereby can not produce because the fragment that expands with heat and contract with cold and cause of welding; Even if surface pressure is shaped with groove, also can guarantees the effectively area of welding, thereby guarantee the fastness of welding.And the design of depth of groove, has guaranteed can farthest retain groove after welding, is not filled out extremely by scolder, especially for manual welding.
The utility model solves the technical scheme that its technical problem adopts: a kind of welding for solar cell, comprise electric conducting base band, and described electric conducting base band is metal simple-substance or alloy material, it has upper and lower two wide surfaces;
Two wide surface pressure of described electric conducting base band are shaped with some grooves, between adjacent described groove, leave base band plane, and the area ratio that the gross area of the described base band plane on same wide surface accounts for its conductive base bandwidth surface, place is 25%-75%;
In the time of the equal press flute in the wide surface of two of electric conducting base bands, 50% < H≤75% that described upper and lower wide surface groove degree of depth summation is described electric conducting base band thickness H.
Preferably the depth of groove on one of them wide surface is less than the depth of groove on another wide surface, and particularly, the depth of groove that welding contacts with positive silver is less than the depth of groove of another side, scolder obstruction front groove when avoiding welding, and affect reflection efficiency.
On described electric conducting base band, plating or heat scribble solder layer, and solder layer can be that Direct Electroplating or heat are coated on electric conducting base band, can be also first on electric conducting base band, first to make layer protecting film, and then electroplate or heat painting solder layer.And, in order to save scolder consumption, reduce manufacturing cost, electric conducting base band surface can only have a wide electroplating surface or heat to be coated with solder layer, therefore, is with reeded electric conducting base band surface can have solder layer, also can there is no solder layer.
The area ratio that the gross area of base band plane accounts for its conductive base bandwidth surface, place is a key, even if make welding surface pressure be shaped with groove, also can guarantee the effectively area of welding, thereby has guaranteed the fastness of welding.Meanwhile, limited the degree of depth of groove, in described depth bounds, the compacting of groove can not exert an influence to the opposite face of press flute in base band.
Groove on described electric conducting base band is regular on described conductive base bandwidth surface along electric conducting base band length direction to be repeated.On the one hand, the ratio that makes total reflection occurs on electric conducting base band is uniformly distributed; On the other hand, base band uniform plane is distributed, thereby be more conducive to welding, meanwhile, can also be convenient to the processing of electric conducting base band.
Because cell piece is different from the thermal coefficient of expansion of welding, the base band of general welding is copper or copper alloy, and cell piece is silicon chip, and the thermal coefficient of expansion of copper or copper alloy is greater than silicon.When welding, base band all expands in length and Width after being heated, after cooling, base band shrinkage degree is greater than cell piece, because now welding and cell piece are fixing, welding will act on to one of cell piece and make the local aduncate power of cell piece, makes the local generation of cell piece deformation.For the space of a contraction is provided to welding, described groove is linear pattern strip groove and/or shaped form strip groove.
Because base band all expands in length and Width after being heated, described groove, in same wide cross-distribution, comprises existing cross-distribution, has again situation about being parallel to each other.The angle of inclination of two crossed grooves can be consistent, for example, be all 60 degree, i.e. two crossed grooves and electric conducting base band length direction mirror image each other; Also can be different.
In the time that described groove is linear pattern strip groove, between adjacent described groove, form tetragonal base band plane.Because linear pattern strip groove manufacturing cost is lower, and, because base band all expands in length and Width after being heated, can reduce equably internal stress in length and Width.
Between adjacent described groove, form the base band plane of rhombus, and the area ratio that the gross area of the base band plane on same wide surface accounts for its conductive base bandwidth surface, place is 30%-60%; Wherein, described groove is divided into two kinds of incline directions, and the groove of two kinds of described incline directions is with respect to the length direction mirror image each other of electric conducting base band, and the angle of the groove of two kinds of described incline directions all and between the Width of electric conducting base band is between 25 °-65 °.
Described groove is in same wide parallel distribution, and can be groove parallel with the Width of electric conducting base band or tilt, or parallel with the length direction of electric conducting base band.
In described groove, also comprise point-like groove, planar groove, and one or more in the groove forming along the one-sided or bilateral compacting inclined-plane of electric conducting base band length direction.
Certainly within the technical scheme that, described groove is point-like groove or is planar groove is also included within protection range of the present utility model.
Described groove is within the groove forming along the one-sided or bilateral compacting inclined-plane of electric conducting base band length direction is also included within protection range of the present utility model.And, in the time that the one-sided or bilateral of the whole length direction of electric conducting base band is all suppressed the inclined-plane to electric conducting base band outer incline, be a kind of limiting case of described groove, described groove becomes inclined-plane.
On the one hand, consider the internal stress that reduces welding, on the other hand, improve as much as possible the ability that described groove is reflected back sunlight cell piece, the more at least tangent plane in groove floor in groove floor on described electric conducting base band is 20.9 °-45 ° with respect to the angle of inclination of conductive base bandwidth face.Light is injected optically thinner medium from optically denser medium, and in the time that incidence angle increases to critical angle, while making refraction angle reach 90 °, refract light disappears completely, only remaining reverberation, and this phenomenon is called total reflection.Because sunlight is 41.8 ° at the glass of photovoltaic cell component and the critical angle of air interface layer generation total reflection, incide the glass of photovoltaic module and the incidence angle of air interface layer is more than or equal to this critical angle as long as make from the sunlight of the groove reflection of welding, sunlight will be in the glass of photovoltaic module and air interface layer generation total reflection, thereby make the sunlight that total reflection occurs again participate in opto-electronic conversion, photovoltaic cell component actual power further can be promoted to 0.2%-2% by surperficial particular groove structure.Described groove can be deep-slotted chip breaker, can be also V-shaped groove.If deep-slotted chip breaker, its inclined bottom surface angle gradually changes, and is generally from slot opening to bottom, and the angle of inclination of groove floor diminishes gradually; And comprise that arc groove bottom surface only has part angle of inclination to meet the sunlight reflecting through welding in the glass of photovoltaic cell component and the requirement of air interface layer generation total reflection, and other parts do not meet the situation of this requirement, can make the sunlight of groove reflection incide the glass of photovoltaic module and the incidence angle of air interface layer is more than or equal to the critical angle that total reflection occurs.Certainly the tangent plane that, also comprises groove floor every bit on bottom surface is the situation of 20.9 °-45 ° with respect to the angle of inclination of wide of welding.
Described electric conducting base band, material is fine copper or albronze, Kufil, copper aerdentalloy or take high-purity native copper as basis and be added with the alloy of rare earth material.
On electric conducting base band, prepare solder layer by the mode of electroplating or heat is coated with, the scolder using is leypewter, sn-bi alloy, gun-metal, tin-cerium alloy, sn-ag alloy, pure tin, one or more in SAC alloy; Solder layer is one or more layers, and its gross thickness is 3-30 μ m.
Between this external electric conducting base band and solder layer, can be electroplate with one or more layers ultra-thin diaphragm, the thickness of described ultra-thin diaphragm is 0.1-10 μ m.
Groove shapes and the distribution on the same wide surface of electric conducting base band of the present utility model are not limited to one, and, the groove of difformity and different distributions can be set on two wide surfaces of electric conducting base band.
The beneficial effects of the utility model are, welding for solar cell of the present utility model, the wide surface pressure of welding is shaped with groove, accounts for the area ratio on its conductive base bandwidth surface, place by limiting the gross area of base band plane, guarantee the area of effective welding, thereby guaranteed the fastness of welding; Meanwhile, limited the degree of depth of groove, in described depth bounds, the compacting of groove can not exert an influence to the opposite face of press flute in base band, and can farthest retain groove after welding, is not filled out extremely by scolder, especially for manual welding; Meeting welding requirements, reduce in internal stress, make considerable part in sunlight that the wide surface of welding receives in the glass air interface total reflection of photovoltaic cell component and rejoin opto-electronic conversion, further lifting subassembly actual power.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment 1 of the present utility model.
Fig. 2 is the generalized section of V-type groove in Fig. 1.
Fig. 3 is the generalized section that the groove in embodiment 1 of the present utility model is deep-slotted chip breaker.
Fig. 4 is the structural representation of embodiment 2 of the present utility model.
Fig. 5 is the structural representation of embodiment 3 of the present utility model.
Fig. 6 is the structural representation of embodiment 4 of the present utility model.
Fig. 7 is the structural representation of embodiment 5 of the present utility model.
Fig. 8 is the structural representation of embodiment 6 of the present utility model.
Fig. 9 is the structural representation of embodiment 7 of the present utility model.
Figure 10 is the structural representation of embodiment 8 of the present utility model.
Figure 11 is the structural representation of embodiment 9 of the present utility model.
Figure 12 is the structural representation of embodiment 10 of the present utility model.
Figure 13 is the structural representation of embodiment 11 of the present utility model.
Figure 14 is the generalized section of Figure 13.
Figure 15 is the structural representation of embodiment 12 of the present utility model.
Figure 16 is the generalized section of Figure 15.
Figure 17 is the structural representation of embodiment 13 of the present utility model.
Figure 18 is the structural representation of embodiment 14 of the present utility model.
Figure 19 is the A-A generalized section of Figure 18.
In figure 1, electric conducting base band, 2, solder layer, 3, groove, 4, base band plane.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, and basic structure of the present utility model is only described in a schematic way, and therefore it only shows the formation relevant with the utility model.
Select TU1 oxygen-free copper as conductive base, thickness is 0.20mm, be shaped with the linear pattern strip V-type groove 3 of even cross-distribution in two wide surface pressure, between adjacent groove 3, leave the base band plane 4 of rhombus, and the area ratio that the gross area of the base band plane 4 on same wide surface accounts for its place electric conducting base band 1 wide surface is 35%; Wherein, linear pattern strip V-type groove 3 all tilts with Width and the length direction of electric conducting base band 1, and only has the linear pattern strip V-type groove 3 at two kinds of angles of inclination; In the present embodiment, these two kinds of linear pattern strip V-type grooves are with respect to the length direction mirror image each other of electric conducting base band 1, and two kinds of angles of inclination are respectively the inclination angle that is roughly the both direction of 60 ° with the Width of electric conducting base band 1.
In the time of the equal press flute 3 in the wide surface of 1 two of electric conducting base bands, groove 3 degree of depth are 20%-30% of electric conducting base band 1 thickness, and upper and lower wide surface groove 3 depth capacity summations are no more than 52% of electric conducting base band 1 thickness;
Select gun-metal scolder, electroplate on fluted 3 electric conducting base band 1 at this or heat is coated with 10um solder layer 2, obtain the welding for solar cell.
In Fig. 3, the bore of the groove 3 on electric conducting base band 1 from opening to bottom dwindles gradually, on groove 3 bottom surfaces, selects the tangent plane on groove 3 bottom surfaces, is 20.9 °-45 ° with respect to the angle of inclination of wide of electric conducting base band 1.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.6W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Fig. 1, Fig. 2 have provided this structure chart for the welding of solar cell.And groove 3 can be also circular arc as shown in Figure 3.
Between this external electric conducting base band and solder layer, can be electroplate with one or more layers ultra-thin diaphragm, the thickness of described ultra-thin diaphragm is 0.1-10 μ m.
Embodiment 2
As shown in Figure 4, the structural representation of embodiment 2 of the present utility model.As different from Example 1, be shaped with the linear pattern strip V-type groove 3 of even parallel distribution in two wide surface pressure of conductive base, between adjacent groove 3, leave the base band plane 4 of strip, the area ratio that the gross area of the base band plane 4 on same wide surface accounts for its place electric conducting base band 1 wide surface is 45%, groove 3 degree of depth are 35% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.4W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3N, meets the demands.
As shown in Figure 5, the structural representation of embodiment 3 of the present utility model.As different from Example 1, the only linear pattern strip V-type groove 3 at oriented two kinds of angles of inclination, part linear pattern strip V-type groove 3 is parallel with the Width of electric conducting base band 1, another part and electric conducting base band 1 length direction tilt, form base band plane 4, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 25%, and groove 3 degree of depth are 29% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.6W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
As shown in Figure 6, the structural representation of embodiment 4 of the present utility model.As different from Example 1, the only linear pattern strip V-type groove 3 at oriented two kinds of angles of inclination, part linear pattern strip V-type groove 3 is parallel with the length direction of electric conducting base band 1, another part and electric conducting base band 1 Width tilt, form base band plane 4, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 75%, and groove 3 degree of depth are 27% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.2W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3N, meets the demands.
Embodiment 5
As shown in Figure 7, the structural representation of embodiment 5 of the present utility model.As different from Example 1, the only strip V-type groove 3 at oriented two kinds of angles of inclination, linear pattern strip V-type groove 3 is parallel with the Width of electric conducting base band 1; Another part groove 3 tilts with electric conducting base band 1 length direction, the groove 3 tilting with electric conducting base band 1 length direction is shaped form strip V-type groove 3, form base band plane 4, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 45%, groove 3 degree of depth are 30% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.2W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3N, meets the demands.
Embodiment 6
As shown in Figure 8, the structural representation of embodiment 6 of the present utility model.As different from Example 1, linear pattern strip V-type groove 3 all changes shaped form strip V-type groove 3 into, form base band plane 4, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 45%, groove depth groove 3 degree of depth are 35% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.5W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 7
As shown in Figure 9, the structural representation of embodiment 7 of the present utility model.As different from Example 1, linear pattern strip V-type groove 3 all changes planar V-type groove 3 into, and each planar V-type groove 3 does not all intersect mutually, form base band plane 4, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 55%, groove 3 degree of depth are 36% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3N, meets the demands.
Embodiment 8
As shown in figure 10, the structural representation of embodiment 8 of the present utility model.As different from Example 1, linear pattern strip V-type groove 3 changes the combination of linear pattern strip V-type groove 3 and point-like V-type groove 3 into, and each groove 3 does not all intersect mutually, form base band plane 4, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 45%, groove 3 degree of depth are 36% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.8W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 9
As shown in figure 11, the structural representation of embodiment 9 of the present utility model.As different from Example 1, two wide surface pressure at conductive base are shaped with groove 3, and the distribution of groove 3 is identical with embodiment 1, groove 3 is linear pattern strip V-type groove, and also there is on this basis the linear pattern strip V-type groove 3 that is parallel to electric conducting base band Width, the area ratio that accounts for its place electric conducting base band 1 wide surface with the gross area of reeded wide lip-deep base band plane 4 is 30%, and groove 3 degree of depth are 37% of electric conducting base band 1 thickness, prepare solder layer 2 by plating mode.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.8W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 10
As different from Example 9, except a wide surface pressure at conductive base is shaped with the groove identical with embodiment 93, another wide face also has groove 3, as shown in figure 12, is another structural representation of wide of embodiment 10.Another groove of wide 3 is for being parallel to the linear pattern strip V-type groove of electric conducting base band Width, and the upper and lower wide lip-deep linear pattern strip V-type groove that is parallel to electric conducting base band Width does not overlap mutually, i.e. the upper and lower wide lip-deep linear pattern strip V-type groove that the is parallel to electric conducting base band Width compacting that intermeshes.And the surperficial area ratio that the gross area of upper wide upper base band plane 4 accounts for its place electric conducting base band 1 is 30%, on lower wide surface, to account for the surperficial area ratio of its place electric conducting base band 1 be 75% to the gross area of base band plane 4, and groove 3 degree of depth of upper surface are 30% of electric conducting base band 1 thickness, groove 3 degree of depth of lower surface are 27% of electric conducting base band 1 thickness.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.5W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 11
As shown in Figure 13-14, the structural representation of embodiment 11 of the present utility model.As different from Example 1, the groove of the present embodiment is that now, groove 3 becomes inclined-plane along the inclined-plane to electric conducting base band outer incline of electric conducting base band 1 length direction both sides compacting.Electric conducting base band 1 middle part forms the base band plane 4 along electric conducting base band 1 length direction, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 50%, groove inclined-plane 3 degree of depth are 30% of electric conducting base band 1 thickness, prepare solder layer 2 by plating or hot painting mode.
On groove 3 bottom surfaces on electric conducting base band 1, selecting the tangent plane on groove 3 bottom surfaces, is 20.9 °-45 ° with respect to the angle of inclination of wide of electric conducting base band 1.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 3W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 12
As shown in Figure 15-16, the structural representation of embodiment 12 of the present utility model.As different from Example 1, in the present embodiment, along the one-sided compacting of electric conducting base band 1 length direction to the tilted inclined-plane of electric conducting base band, form groove 3.Electric conducting base band 1 opposite side forms the base band plane 4 along electric conducting base band 1 length direction, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 65%, groove inclined-plane 3 degree of depth are 32% of electric conducting base band 1 thickness, prepare solder layer 2 by plating or hot painting mode.
On groove 3 bottom surfaces on electric conducting base band 1, selecting the tangent plane on groove 3 bottom surfaces, is 20.9 °-45 ° with respect to the angle of inclination of wide of electric conducting base band 1.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.8W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 13
As shown in figure 17, the structural representation of embodiment 13 of the present utility model.As different from Example 1, the groove of the present embodiment is the linear pattern strip V-type groove 3 along electric conducting base band 1 length direction both sides compacting, electric conducting base band 1 middle part forms the base band plane 4 along electric conducting base band 1 length direction, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 70%, groove inclined-plane 3 degree of depth are 33% of electric conducting base band 1 thickness, prepare solder layer 2 by plating or hot painting mode.
On groove 3 bottom surfaces on electric conducting base band 1, selecting the tangent plane on groove 3 bottom surfaces, is 20.9 °-45 ° with respect to the angle of inclination of wide of electric conducting base band 1.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 2.3W
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3.5N, meets the demands.
Embodiment 14
As shown in Figure 18-19, the structural representation of embodiment 14 of the present utility model.As different from Example 13, the groove of the present embodiment is the linear pattern strip V-type groove along electric conducting base band 1 length direction both sides compacting, wherein, the inclined-plane to electric conducting base band outer incline of suppressing along the middle part of electric conducting base band 1 length direction both sides, form inclined plane groove, linear pattern strip V-type groove and inclined plane groove form the groove 3 of the present embodiment jointly.Electric conducting base band 1 middle part forms the base band plane 4 along electric conducting base band 1 length direction, and the area ratio that the gross area of the base band plane 4 of same wide accounts for its place electric conducting base band 1 wide surface is 75%, groove inclined-plane 3 degree of depth are 33% of electric conducting base band 1 thickness, prepare solder layer 2 by plating or hot painting mode.
On groove 3 bottom surfaces on electric conducting base band 1, selecting the tangent plane on groove 3 bottom surfaces, is 20.9 °-45 ° with respect to the angle of inclination of wide of electric conducting base band 1.
Adopt 60 156*156 polysilicon chips, use this welding for solar cell, face relatively shallow groove and positive silver soldering are connect, the component power that the power ratio of preparation one Battery pack assembly is used common welding to prepare exceeds 1.5W.
The pulling force of peeling off of welding is to pass through tensiometer, spend along cell piece 180 that direction is counter draws welding until welding is peeled off required pulling force from cell piece, generally peel off pulling force requirement and be greater than 1.5N, after the welding welding of the present embodiment, welding is peeled off pulling force and is greater than 3N, meets the demands.
Claims (12)
1. for a welding for solar cell, comprise electric conducting base band (1), described electric conducting base band (1) is metal simple-substance or alloy material, and it has upper and lower two wide surfaces, it is characterized in that:
Two wide surface pressure of described electric conducting base band (1) are shaped with some grooves (3), between adjacent described groove (3), leave base band plane (4), and the area ratio that the gross area of the described base band plane (4) on same wide surface accounts for its wide surface of place electric conducting base band (1) is 25%-75%;
In the time of (1) two equal press flute in wide surface of electric conducting base band (3), described upper and lower wide surface groove (3) degree of depth summation is 50% < H≤75% of described electric conducting base band (1) thickness H.
2. the welding for solar cell as claimed in claim 1, is characterized in that: the depth of groove on one of them wide surface is less than the depth of groove on another wide surface.
3. the welding for solar cell as claimed in claim 1, is characterized in that: the groove (3) on described electric conducting base band (1) is regular on the wide surface of described electric conducting base band (1) along electric conducting base band length direction to be repeated.
4. the welding for solar cell as claimed in claim 3, is characterized in that: described groove (3) is linear pattern strip groove and/or shaped form strip groove.
5. the welding for solar cell as claimed in claim 4, is characterized in that: described groove (3) is in same wide cross-distribution.
6. the welding for solar cell as claimed in claim 5, is characterized in that: in the time that described groove (3) is linear pattern strip groove, between adjacent described groove (3), form tetragonal base band plane (4).
7. the welding for solar cell as claimed in claim 4, is characterized in that: described groove (3) is in same wide parallel distribution.
8. the welding for solar cell as claimed in claim 4, it is characterized in that: in described groove (3), also comprise point-like groove, planar groove, and one or more in the inclined plane groove forming along the one-sided or bilateral compacting inclined-plane of electric conducting base band (1) length direction.
9. the welding for solar cell as claimed in claim 3, is characterized in that: described groove (3) is point-like groove.
10. the welding for solar cell as claimed in claim 3, is characterized in that: described groove (3) is planar groove.
11. weldings for solar cell as claimed in claim 3, is characterized in that: the inclined plane groove that described groove (3) forms for the one-sided or bilateral compacting inclined-plane along electric conducting base band (1) length direction.
12. weldings for solar cell as described in any one in claim 1-11, it is characterized in that: the more at least tangent plane on groove (3) bottom surface on groove (3) bottom surface on described electric conducting base band (1) is 20.9 °-45 ° with respect to the angle of inclination of wide of electric conducting base band (1).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420009889.5U CN203674234U (en) | 2014-01-07 | 2014-01-07 | Welding strip used for solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420009889.5U CN203674234U (en) | 2014-01-07 | 2014-01-07 | Welding strip used for solar cell |
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| CN203674234U true CN203674234U (en) | 2014-06-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015014219A1 (en) * | 2013-07-31 | 2015-02-05 | 凡登（江苏）新型材料有限公司 | Photovoltaic welding strip |
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2014
- 2014-01-07 CN CN201420009889.5U patent/CN203674234U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015014219A1 (en) * | 2013-07-31 | 2015-02-05 | 凡登（江苏）新型材料有限公司 | Photovoltaic welding strip |
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Owner name: FUNDANT (JIANGSU) NEW MATERIAL CO., LTD. Free format text: FORMER OWNER: MONTE GROUP (HONGKONG) CO., LTD. Effective date: 20141119 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Inventor after: Qian Haipeng Inventor before: Encouragement |
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Free format text: CORRECT: ADDRESS; FROM: HONG KONG, CHINA TO: 213200 CHANGZHOU, JIANGSU PROVINCE Free format text: CORRECT: INVENTOR; FROM: LI ZHENG TO: QIAN HAIPENG |
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| TR01 | Transfer of patent right |
Effective date of registration: 20141119 Address after: 213200 Changzhou, China, Jintan City Hua Road, No. 168, No. Patentee after: FUNDANT (JIANGSU) ADVANCED MATERIALS Co.,Ltd. Address before: China Hongkong 50 Gloucester Road, Malaysia Building, 2 floor of No. 204 Patentee before: MONTE GROUP (HONG KONG) Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 |