CN203658240U - Automatic detection device for stress of silicon carbide polishing wafer - Google Patents
Automatic detection device for stress of silicon carbide polishing wafer Download PDFInfo
- Publication number
- CN203658240U CN203658240U CN201320864481.1U CN201320864481U CN203658240U CN 203658240 U CN203658240 U CN 203658240U CN 201320864481 U CN201320864481 U CN 201320864481U CN 203658240 U CN203658240 U CN 203658240U
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- Prior art keywords
- stress
- camera
- detection device
- column
- automatic detection
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- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 5
- 238000005498 polishing Methods 0.000 title abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 2
- 238000006073 displacement reaction Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000035882 stress Effects 0.000 description 24
- 230000003993 interaction Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000000105 evaporative light scattering detection Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Abstract
The utility model discloses an automatic detection device for the stress of a silicon carbide polishing wafer. The 360-degree rotation of a camera can be realized by virtue of a displacement sensor, so that an image collection device and a stress instrument main body are combined together, and images collected by the camera are transmitted to a computer by virtue of a data line so as store stress images for further analysis. The automatic detection device is convenient and practical, and can be operated by a single person from beginning to end, thus being time-saving and effort-saving; the automatic detection device is simple to operate as the whole process can be operated on the computer by virtue of a visualized software, and when the quantity of to-be-detected crystal bars is more, the detection efficiency can be greatly improved; the 360-degree rotation of a camera can be realized, the shooting angle is accurately positioned so as to guarantee the image collection accuracy, and the stress detection accuracy can be further improved.
Description
Technical field
The utility model relates to a kind of stress detection device, is specifically related to a kind of silit polished silicon wafer stress detection device.
Background technology
Single-crystal silicon carbide, in the process of growth, due to temperature field heterogeneous in single crystal growing furnace, can produce thermal stress at crystals; Meanwhile, the single-crystal silicon carbide growing out, cutting, grind, throw in the process of producing wafer through follow-up machining, can be introduced again machining stress.Therefore, stress analysis becomes the important evidence that single-crystal silicon carbide tablet quality is analyzed.
The wafer stress detector of selling on market is now mostly manual operation, can only, by visual inspection, cannot preserve stress image, is not easy to attributional analysis.Even if now someone proposes CCD camera is installed on the basis of original tension gauge, but will obtain clear and stress image accurately, still need manual focusing, this quite wastes time and energy for mass detection.
Summary of the invention
For above-mentioned weak point, the utility model provides a kind of silit polished silicon wafer stress automatic detection device, convenient and practical, time saving and energy saving, has solved the problem that cannot preserve image in prior art, waste time and energy.
Concrete technical scheme of the present utility model is:
A kind of silit polished silicon wafer stress automatic detection device, comprise pedestal, in pedestal, be provided with light source, on pedestal, be provided with monitor station, monitor station below is provided with polarizer, described pedestal one side is fixed with column I, column I upper end is connected with sway brace I, sway brace I end is provided with analyzer, described column I axle connects column II, and column II upper end is connected with sway brace II, the sway brace II end camera that has been connected through the hinge, described camera is connected with computer by data line, and described computer expert crosses displacement transducer and is electrically connected with column II and camera.
Described column I axle connects column II, makes column II centered by axle, realize 360 degree rotations; Column II upper end is connected with sway brace II, the sway brace II end camera that has been connected through the hinge, camera is realized 180 degree rotations centered by hinge, computer expert crosses displacement transducer and realizes the rotation of camera like this, select suitable shooting angle accurately to locate, ensure the accuracy of image acquisition, further improve the accuracy that stress detects.
In order to make light source more even, described polarizer below is provided with equal tabula rasa.
Described camera is CCD camera, can realize automatic focusing, presents the stress image of silit polished silicon wafer sample under the interaction of polarizer and analyzer.
Adopt such structure, while testing the stress of silit polished silicon wafer, silit polished silicon wafer sample is placed on monitor station, the light that light source sends is successively by equal tabula rasa, polarizer, sample, analyzer, by the control knob on visual software in computer, by displacement transducer to realize the rotation of column II and camera, described CCD camera can be realized automatic focusing, to ensure light source, all tabula rasas, polarizer, sample, the center of analyzer and camera point-blank, under the interaction at polarizer and analyzer, present the stress image of silit polished silicon wafer sample, thereby obtain clear and stress image accurately, and stress image can be preserved on computers, thereby be convenient to analyze, especially in the time that crystal bar quantity to be detected is more, will greatly improve detection efficiency.
The utility model is convenient and practical, and whole process can one man operation complete, time saving and energy saving; Simple to operate, whole process can operate on computers by visual software interface, in the time that crystal bar quantity to be detected is more, will greatly improve detection efficiency; Can realize 360 degree rotations of camera, shooting angle is accurately located, and ensures the accuracy of image acquisition, further improves the accuracy that stress detects.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
In figure, 1 is pedestal, the 2nd, and light source, the 3rd, equal tabula rasa, the 4th, polarizer, the 5th, monitor station, the 6th, sway brace I, the 7th, analyzer, the 8th, camera, the 9th, sway brace II, the 10th, data line, the 11st, computer, the 12nd, displacement transducer, the 13rd, column II, the 14th, column I.
Embodiment
A kind of silit polished silicon wafer stress automatic detection device, comprise pedestal 1, in pedestal 1, be provided with light source 2, on pedestal 1, be provided with monitor station 5, monitor station 5 belows are provided with polarizer 4, described pedestal 1 one sides are fixed with column I 14, column I 14 upper ends are connected with sway brace I 6, sway brace I 6 ends are provided with analyzer 7, described column I 14 axles connect column II 13, column II 13 upper ends are connected with sway brace II 9, the sway brace II 9 ends camera 8 that has been connected through the hinge, described camera 8 is connected with computer 11 by data line 10, described computer 11 is electrically connected with column II 13 and camera 8 by displacement transducer 12.
In order to make light source more even, described polarizer 4 belows are provided with equal tabula rasa 3.
Described camera 8 is CCD camera, can realize automatic focusing, presents the stress image of silit polished silicon wafer sample under the interaction of polarizer 4 and analyzer 7.
Adopt such structure, while testing the stress of silit polished silicon wafer, silit polished silicon wafer sample is placed on monitor station 5, the light that light source 2 sends is successively by equal tabula rasa 3, polarizer 4, sample, analyzer 7, by the control knob on visual software in computer 11, make column II 13 centered by axle, realize 360 degree rotations; Column II 13 upper ends are connected with sway brace II 9, the sway brace II 9 ends camera 8 that has been connected through the hinge, camera 8 is realized 180 degree rotations centered by hinge, computer 11 is realized the rotation of camera 8 by displacement transducer 12 like this, select suitable shooting angle accurately to locate, ensure the accuracy of image acquisition, further improve the accuracy that stress detects.
Described CCD camera 8 can be realized automatic focusing, with ensure light source 2, all tabula rasa 3, polarizer 4, sample, analyzer 7 and camera 8 center point-blank, under the interaction of polarizer 4 and analyzer 7, present the stress image of silit polished silicon wafer sample, thereby obtain clear and stress image accurately, and stress image can be kept on computer 11, thereby be convenient to analyze; Especially in the time that crystal bar quantity to be detected is more, will greatly improve detection efficiency.
Claims (3)
1. a silit polished silicon wafer stress automatic detection device, comprise pedestal (1), in pedestal (1), be provided with light source (2), on pedestal (1), be provided with monitor station (5), monitor station (5) below is provided with polarizer (4), it is characterized in that: described pedestal (1) one side is fixed with column I (14), column I (14) upper end is connected with sway brace I (6), sway brace I (6) end is provided with analyzer (7), described column I (14) axle connects column II (13), column II (13) upper end is connected with sway brace II (9), sway brace II (9) the end camera (8) that has been connected through the hinge, described camera (8) is connected with computer (11) by data line (10), described computer (11) is electrically connected with column II (13) and camera (8) by displacement transducer (12).
2. silit polished silicon wafer stress automatic detection device according to claim 1, is characterized in that: described polarizer (4) below is provided with equal tabula rasa (3).
3. silit polished silicon wafer stress automatic detection device according to claim 1, is characterized in that: described camera (8) is CCD camera.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320864481.1U CN203658240U (en) | 2013-12-25 | 2013-12-25 | Automatic detection device for stress of silicon carbide polishing wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320864481.1U CN203658240U (en) | 2013-12-25 | 2013-12-25 | Automatic detection device for stress of silicon carbide polishing wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203658240U true CN203658240U (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320864481.1U Expired - Lifetime CN203658240U (en) | 2013-12-25 | 2013-12-25 | Automatic detection device for stress of silicon carbide polishing wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203658240U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105067421A (en) * | 2015-09-15 | 2015-11-18 | 中南大学 | Three-dimensional stress characterizing method for TSV (Through Silicon Vias) structure based on image analysis |
| CN105549216A (en) * | 2016-02-19 | 2016-05-04 | 天津市职业大学 | Multi-user real-time visual gem polariscope |
-
2013
- 2013-12-25 CN CN201320864481.1U patent/CN203658240U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105067421A (en) * | 2015-09-15 | 2015-11-18 | 中南大学 | Three-dimensional stress characterizing method for TSV (Through Silicon Vias) structure based on image analysis |
| CN105067421B (en) * | 2015-09-15 | 2017-11-10 | 中南大学 | A kind of triaxiality characterizing method of the TSV structure based on graphical analysis |
| CN105549216A (en) * | 2016-02-19 | 2016-05-04 | 天津市职业大学 | Multi-user real-time visual gem polariscope |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Automatic detection device for stress of silicon carbide polishing wafer Effective date of registration: 20180806 Granted publication date: 20140618 Pledgee: Agricultural Bank of China Limited by Share Ltd. Ji'nan branch Pledgor: SICC Co.,Ltd. Registration number: 2018370000146 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20191218 Granted publication date: 20140618 Pledgee: Agricultural Bank of China Limited by Share Ltd. Ji'nan branch Pledgor: SICC Co.,Ltd. Registration number: 2018370000146 |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co.,Ltd. Address before: 3-409, Yinhe building, 2008 Xinluo street, Lixia District, Jinan City, Shandong Province Patentee before: SICC Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |