CN203644726U - Transmission electron microscope sample bench of in-situ measurement nanometer device - Google Patents
Transmission electron microscope sample bench of in-situ measurement nanometer device Download PDFInfo
- Publication number
- CN203644726U CN203644726U CN201320631538.3U CN201320631538U CN203644726U CN 203644726 U CN203644726 U CN 203644726U CN 201320631538 U CN201320631538 U CN 201320631538U CN 203644726 U CN203644726 U CN 203644726U
- Authority
- CN
- China
- Prior art keywords
- sample
- electron microscope
- metal electrode
- jam
- nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Images
Abstract
The utility model discloses a transmission electron microscope sample bench of an in-situ measurement nanometer device comprising a metal nanometer probe, an insulation blocking sheet, and a sample supporting bench. The front surface and the back surface of the insulation blocking sheet are respectively provided with a plurality of metal electrodes, and the conductive connection of the corresponding metal electrodes can be realized by metalized through holes. One end of the sample supporting bench is connected with the insulation blocking sheet, and the other end is provided with a sampling area and a test area. The test area is metal electrodes, which are disposed on the surface of the sample supporting bench in a suspended manner, and the metal electrodes of the sample supporting bench are connected with the metal electrodes of the insulation blocking sheet in a conductive manner. The metal nanometer probe, the metal electrodes of the test area, and the tested sample can be used to form a three-terminal field effect transistor. The transmission electron microscope sample bench is advantageous in that the sample can be observed at the atomic-scale resolution, and the electrical measurement can be carried out in a real-time manner, and the in-situ reveal of the electrical performance and the change of the nanometer structure of the unit to be tested can be realized.
Description
Technical field
The utility model belongs to nano-device performance in-situ fields of measurement, relate in particular to the electric property of in site measurement graphene field effect pipe and the multi-electrode sample for use in transmitted electron microscope platform of atomic structure, be specially and utilize nanoscale micro-structural processing technology, on narrow and small sample for use in transmitted electron microscope, prepare multi-electrode device and build district and nano material sampling area.
Background technology
In nano electron device field, Graphene two-dimensional material is considered to the successor of silicon.The monoatomic layer flat film that Graphene is made up of carbon atom, has the characteristics such as high conductivity, high strength, ultra-thin.Electrical response and the physical pattern of the field-effect transistor of research based on Graphene under extra electric field state changes, and gathers its electrology characteristic data, is the elementary object of current design and exploitation graphene nano field-effect transistor.
Transmission electron microscope is a kind of important tool that characterizes nano material microstructure, can observe the full resolution pricture of nano material sample by transmission electron microscope.Particularly utilize custom-designed sample stage outfield to be incorporated into the privileged site of nano material sample, nano material is carried out to three-dimensional manipulation and electricity performance measurement, receive and see structure and the respondent behavior to outfield for understanding nano material, design and structure novel nano device have very important significance.
For general field-effect transistor structure, at least need three-end electrode: source, leakage and grid.Prior art cannot meet the measurement of multi-electrode nano-device.Transmission electron microscope is owing to observing sample under the resolution of atomic scale, it is the powerful of research nanometer material structure and performance, and the space of placing sample in transmission electron microscope between objective pole shoe is very narrow and small, special in the commercial spherical aberration transmission electron microscope with sub-nanoscale resolution, conventionally only have 2,3 millimeter, holding outside lower specimen holder, be difficult to install multi-electrode, the more difficult measurement signal of telecommunication, therefore needs that the signal of telecommunication is exported to Electronic Speculum outside and measures.Under this kind of condition, how to carry out the transistorized structure of original position Graphene very difficult.How in the confined space, to introduce multiple electrodes, carry out in real time electrical measurement, electric property and nanostructure variation that original position discloses to-be-measured cell are difficult problems for current graphene field effect transistor research.
Summary of the invention
Goal of the invention: for the problem and shortage of above-mentioned existing existence, the purpose of this utility model is to provide a kind of sample for use in transmitted electron microscope platform of in site measurement nano-device, can under the resolution of atomic scale, observe sample and carry out in real time electrical measurement, electric property and nanostructure that original position discloses to-be-measured cell change.
Technical scheme: for achieving the above object, the utility model is by the following technical solutions: a kind of sample for use in transmitted electron microscope platform of in site measurement nano-device, comprise metallic nano detecting probe, insulation jam and sample holder, the positive and negative surface of described insulation jam is respectively equipped with multiple metal electrodes, and realizes conduction connection by plated-through hole between corresponding metal electrode; Described sample holder one end is connected with insulation jam, and the other end is provided with sampling area and test section, and described test section is to be located at sample holder surface unsettled metal electrode, and the metal electrode of sample holder is that conduction is connected with the metal electrode of insulation jam; Described metallic nano detecting probe, test section metal electrode and sample form three end field-effect transistors.
As preferably, the metal electrode of described sample holder test section is 4, and corresponding insulation jam positive and negative is also respectively equipped with 4 metal electrodes.
Further improve, described sample holder surface is provided with 4 electrode pins and is connected with test section metal electrode respectively; Described insulation jam is provided with slot simultaneously, and sample holder one end is located in this slot.
Further, described sample holder material selection silicon or silicon nitride.
Further, the material of described insulation jam adopts sapphire or aluminium nitride.
Further, the metal electrode in described sample holder is to deposit by magnetically controlled sputter method the gold, nickel, the platinum film that obtain.
As preferably, the material of described metal electrode adopts titanium alloy.
Further, described sampling area is lattice-shaped.
Beneficial effect: compared with prior art, the utlity model has following advantage: directly in-situ construction multi-electrode nano-device on sample for use in transmitted electron microscope, under atom definition yardstick, study nano-device, and carry out electrical property measurement; Realize at transmission electron microscope situ the to-be-measured cell of nanoscale has been carried out to electrical measurement and observation, a kind of in-situ measuring method of the new nano-device based on nano wire or film is provided, have dependable performance, feature easy for installation, has expanded the function of transmission electron microscope; Can prepare multiple to-be-measured cells simultaneously, on each electrode, can configure testing sample, measure so can realize the repeatedly electrical characteristics of same batch sample, and be independent of each other between each measurement.
Brief description of the drawings
Fig. 1 is the structural representation of sample for use in transmitted electron microscope platform described in the utility model;
Fig. 2 is the structural representation of insulation jam described in the utility model;
Fig. 3 is the structural representation in sample holder described in the utility model front;
Fig. 4 is the structural representation of sample holder reverse side described in the utility model.
Wherein, insulation jam 1, sample holder 2, metallic nano detecting probe 3, metal electrode 4, plated-through hole 5, sampling area 6, test section 7, electrode pin 8, slot 9, sample 10.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the utility model, should understand these embodiment and only be not used in restriction scope of the present utility model for the utility model is described, after having read the utility model, those skilled in the art all fall within the application's claims limited range to the amendment of the various equivalent form of values of the present utility model.
As shown in Figure 1, a kind of electric property of in site measurement graphene field effect pipe and the sample for use in transmitted electron microscope platform of atomic structure, comprise insulation jam, sample holder and metallic nano detecting probe, insulation jam positive and negative is respectively equipped with 4 metal electrodes, and the corresponding metal electrode of positive and negative is realized conduction connection by plated-through hole; The jam that simultaneously insulate is provided with inserting slot construction, inserts in slot for sample holder one end, and the other end suspends.The end that suspends of sample holder is provided with test section and sample area, wherein sample area is that lattice-shaped is for holding testing sample, test section forms 4 metal electrodes and the electrode pin being connected respectively with this metal electrode by magnetically controlled sputter method depositing metal films, the unsettled setting of this metal electrode, wherein 2 electrode pins are located at upper surface, middle 2 electrode pins are also by the metallic film conducting of plated-through hole and lower surface, insert after insulation jam when sample holder, guarantee that electrode pin connects with metal electrode conduction corresponding on insulation jam respectively.
When work, thereby metallic nano detecting probe can top to bottom, left and right, front and rear moves and handles and extract thin, the suitable graphene platelet that is placed on sampling area, be transferred to multielectrode test section, thereby and contact in-situ construction with metal electrode and become three end field-effect transistors.
As shown in Figure 2, the jam that wherein insulate is made up of the insulating material with some strength, as sapphire, aluminium nitride etc., it is of a size of 4mm × 2.4mm, and get 4 through holes in the above by laser etching method, and all form metal electrode by metallic films such as magnetically controlled sputter method deposited gold, nickel, platinum at the positive and negative of the correspondence position of plated-through hole, thereby and through-hole wall also deposit same conductive metal film the metal electrode of positive and negative carried out to conducting.Get by the method for laser ablation the slot that is of a size of 2mm × 0.4m equally, then sample stage is inserted to slot, thereby four metal electrode pin electrodes on sample stage are connected completing circuit is docked with four metal electrodes 3 on insulation jam.
As shown in Figure 3, sample stage is made with the material of being convenient to micro-nano processing, and as silicon, silicon nitride etc., it is of a size of 2mm × 6mm × 0.4mm, its width with thickness just in time for the size of the jam slot that insulate is corresponding.The electrode of sample stage adopts semiconducter process sputter, photoetching, ion beam etching etc. to complete.Sample stage end hanging structure, adopts incorgruous wet etching to complete.
As preferably, in order to increase the tack of metal electrode and silicon nitride film, metal electrode should be selected titanium and golden alloy.
For the electrode that makes sample stage is connected to each other with the metal electrode on insulation jam, two electrodes in sample stage front need to be incorporated into reverse side, adopt wet etching through hole technology conventional in semiconductor technology here.
Utilize sample for use in transmitted electron microscope bar original position graphene field effect transistor described in the utility model, and carry out electric property and microstructural test process step is as follows:
(1) graphene platelet that prepared by employing mechanical stripping or CVD method is as channel material.
(2) use source electrode and the drain electrode of titanium as three end field-effect transistors.
(3) select movably nano-probe, as grid.Coordinate research to need, deposition oxide optionally on grid nano metal pin, so-called gate insulator.
(4) pack the nano-probe in original position specimen holder into by manipulation, grid is contacted, in-situ construction graphene field effect transistor structure with Graphene interface.
(5) open original position specimen holder peripheral operation control system, the variation of Graphene defect and the surface texture etc. of electrode interface while utilizing electron diffraction diagram, the work of cooperation high resolution picture analysis field effect transistor; Utilize the original position maneuvering capability of original position specimen holder, change the interface way of contact, state and different contact position, fully excavate the abundant information in interfacial structure; The electrical properties that the interface information of acquisition and original position are recorded carries out correlation analysis and research.
(6) utilize the nano field-effect transistor structure of in-situ construction, with said method, other field-effect transistor elements are carried out to system optimization research work.
Claims (8)
1. the sample for use in transmitted electron microscope platform of an in site measurement nano-device, it is characterized in that: comprise metallic nano detecting probe, insulation jam and sample holder, the positive and negative surface of described insulation jam is respectively equipped with multiple metal electrodes, and realizes conduction connection by plated-through hole between corresponding metal electrode; Described sample holder one end is connected with insulation jam, and the other end is provided with sampling area and test section, and described test section is to be located at sample holder surface unsettled metal electrode, and the metal electrode of sample holder is that conduction is connected with the metal electrode of insulation jam; Described metallic nano detecting probe, test section metal electrode and sample form three end field-effect transistors.
2. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 1, is characterized in that: the metal electrode of described sample holder test section is 4, and corresponding insulation jam positive and negative is also respectively equipped with 4 metal electrodes.
3. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 2, is characterized in that: described sample holder surface is provided with 4 electrode pins and is connected with test section metal electrode respectively; Described insulation jam is provided with slot simultaneously, and sample holder one end is located in this slot.
4. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 3, is characterized in that: described sample holder material selection silicon or silicon nitride.
5. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 3, is characterized in that: the material of described insulation jam adopts sapphire or aluminium nitride.
6. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 3, is characterized in that: the metal electrode in described sample holder is to deposit by magnetically controlled sputter method the gold, nickel, the platinum film that obtain.
7. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 3, is characterized in that: the material of described metal electrode adopts titanium alloy.
8. the sample for use in transmitted electron microscope platform of in site measurement nano-device according to claim 3, is characterized in that: described sampling area is lattice-shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320631538.3U CN203644726U (en) | 2013-10-14 | 2013-10-14 | Transmission electron microscope sample bench of in-situ measurement nanometer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320631538.3U CN203644726U (en) | 2013-10-14 | 2013-10-14 | Transmission electron microscope sample bench of in-situ measurement nanometer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203644726U true CN203644726U (en) | 2014-06-11 |
Family
ID=50875952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320631538.3U Withdrawn - After Issue CN203644726U (en) | 2013-10-14 | 2013-10-14 | Transmission electron microscope sample bench of in-situ measurement nanometer device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203644726U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531424A (en) * | 2013-10-14 | 2014-01-22 | 东南大学 | Transmission electron microscope sample table of in-situ measurement nanometer device |
| CN106124543A (en) * | 2016-07-08 | 2016-11-16 | 东南大学 | Nano material based in situ TEM exchange electrical performance testing device and method |
| CN106206227A (en) * | 2016-08-02 | 2016-12-07 | 天津理工大学 | A kind of transmission electron microscope sample table load sample district possessing field-effect transistor function |
| CN106646175A (en) * | 2016-10-19 | 2017-05-10 | 东南大学 | Embedded test chip based on silicon-based micro-nano mechanical machining technology, and preparation and application method of embedded test chip |
| CN109239114A (en) * | 2018-09-29 | 2019-01-18 | 胜科纳米（苏州）有限公司 | Multifunctional sample platform |
-
2013
- 2013-10-14 CN CN201320631538.3U patent/CN203644726U/en not_active Withdrawn - After Issue
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531424A (en) * | 2013-10-14 | 2014-01-22 | 东南大学 | Transmission electron microscope sample table of in-situ measurement nanometer device |
| CN103531424B (en) * | 2013-10-14 | 2015-12-02 | 东南大学 | A kind of transmission electron microscope sample table of in-situ measurement nanometer device |
| CN106124543A (en) * | 2016-07-08 | 2016-11-16 | 东南大学 | Nano material based in situ TEM exchange electrical performance testing device and method |
| CN106124543B (en) * | 2016-07-08 | 2019-04-09 | 东南大学 | Nano material exchange electrical performance testing device and method based in situ TEM |
| CN106206227A (en) * | 2016-08-02 | 2016-12-07 | 天津理工大学 | A kind of transmission electron microscope sample table load sample district possessing field-effect transistor function |
| CN106206227B (en) * | 2016-08-02 | 2018-01-09 | 天津理工大学 | A kind of transmission electron microscope sample table load sample area for possessing field-effect transistor function |
| CN106646175A (en) * | 2016-10-19 | 2017-05-10 | 东南大学 | Embedded test chip based on silicon-based micro-nano mechanical machining technology, and preparation and application method of embedded test chip |
| CN106646175B (en) * | 2016-10-19 | 2019-06-25 | 东南大学 | Insertion type test chip and its preparation and application method based on the micro-nano mechanical manufacturing technology of silicon substrate |
| CN109239114A (en) * | 2018-09-29 | 2019-01-18 | 胜科纳米（苏州）有限公司 | Multifunctional sample platform |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203644726U (en) | Transmission electron microscope sample bench of in-situ measurement nanometer device | |
| Hui et al. | Scanning probe microscopy for advanced nanoelectronics | |
| CN103531424B (en) | A kind of transmission electron microscope sample table of in-situ measurement nanometer device | |
| CN103400740B (en) | The method of the sample for use in transmitted electron microscope bar that photoelectric properties can be surveyed and structure solar cell | |
| McDowell et al. | Single nanostructure electrochemical devices for studying electronic properties and structural changes in lithiated Si nanowires | |
| CN105136822A (en) | Nanometer material transmission electron microscope in-situ testing chip, preparation method and applications thereof | |
| CN109686675A (en) | A kind of localization method of failure | |
| CN109307784A (en) | A kind of preparation method of the semiconductor needle point sample for three-dimensional atom probe detection | |
| CN107993948B (en) | Method for measuring word line resistance of three-dimensional memory | |
| R-Smith et al. | Assessment of lithium ion battery ageing by combined impedance spectroscopy, functional microscopy and finite element modelling | |
| CN101545871A (en) | Microstructure of nano wire and electrical performance testing device | |
| CN102279288A (en) | Device and method for measuring sample interface potential barrier by atomic force microscope | |
| CN206362861U (en) | A kind of resistance testing device of electrodes of lithium-ion batteries coating material | |
| CN109507489A (en) | A kind of probe system for low temperature plasma potential diagnostic | |
| Lushta et al. | Nanoscale characterization of ion mobility by temperature-controlled li-nanoparticle growth | |
| CN107064565B (en) | Magneto-electric-thermal multiparameter coupling microscope probe, preparation method and detection method thereof | |
| Renz et al. | Determination of lithium diffusion coefficients in single battery active material particles by using an AFM-based steady-state diffusion depolarization technique | |
| CN203312251U (en) | Sample holder device used in observing ultrathin wafer under scanning electron microscope | |
| CN101354416B (en) | Method for preparing small separation distance electrode on transmission electric mirror sample | |
| CN102520249A (en) | Method for measuring conductivity at film thickness direction of semiconductor film | |
| CN102866266B (en) | Three-dimensional micro-drive four-electrode replaceable probe | |
| CN104931741B (en) | Microprobe and preparation method thereof | |
| CN209416966U (en) | Electrochemical in-situ reaction observation chip | |
| CN106646175B (en) | Insertion type test chip and its preparation and application method based on the micro-nano mechanical manufacturing technology of silicon substrate | |
| CN107170794B (en) | Chip applied to TEM for in-situ electrochemical reaction measurement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140611 Effective date of abandoning: 20151202 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |