CN203643967U - Touch induction circuit, panel and touch induction display device - Google Patents
Touch induction circuit, panel and touch induction display device Download PDFInfo
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- CN203643967U CN203643967U CN201320751005.9U CN201320751005U CN203643967U CN 203643967 U CN203643967 U CN 203643967U CN 201320751005 U CN201320751005 U CN 201320751005U CN 203643967 U CN203643967 U CN 203643967U
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Abstract
The utility model provides a touch induction circuit, a panel and a touch induction display device. The touch induction circuit includes a first grid line, a second grid line, a data line, a signal transmission line and a common electrode, wherein a plurality of pixel units are defined by the first grid line, the second grid line and the data line; a first switch pipe, a second switch pipe and a third switch pipe are formed inside the pixel units; the signal transmission line is connected to a signal processor; the third switch pipe is connected in series between the first switch pipe and the second switch pipe; a first node is formed at the joint of the first switch pipe and the third switch pipe; a second node is formed at the joint of the second switch pipe and the third switch pipe; an unchangeable first capacitor is formed between the first node and the common electrode; a changeable second capacitor is formed between the second node and the common electrode; the signal transmission line is connected with the second switch pipe; and the data line is connected with the first switch pipe. The touch induction circuit improves the sensitivity of touch induction.
Description
Technical field
The utility model relates to touch induction technical field, particularly a kind of touch induction circuit, panel and touch sensible display device.
Background technology
At present, embedded touch-screen has and in the induction panel of being incorporated into, makes the advantages such as whole panel integrated level is higher, panel is more frivolous and be widely used.Embedded touch-screen can integrated touch and inducing function, in order to make touch-screen there is good touch sensitivity, Fig. 1 is the structural representation of touch induction circuit of the prior art, as shown in Figure 1, this touch induction circuit comprises: data line, the first grid line, the second grid line, signal transmssion line, liquid crystal capacitance C1c, memory capacitance Cst, public electrode, signal processor, thin film transistor (TFT) T1, thin film transistor (TFT) T2, wherein, the source electrode of thin film transistor (TFT) T1 is connected with data line, the grid of thin film transistor (TFT) T1 is connected with the second grid line, the drain electrode of thin film transistor (TFT) T1 is connected with the source electrode of thin film transistor (TFT) T2, the drain electrode of thin film transistor (TFT) T2 is connected with signal transmssion line, the grid of thin film transistor (TFT) T2 is connected with the first grid line.The junction of thin film transistor (TFT) T1 and thin film transistor (TFT) T2 forms Section Point P point, Section Point P point is connected with one end of liquid crystal capacitance C1c and one end of memory capacitance Cst, public electrode is connected with the other end of liquid crystal capacitance C1c and the other end of memory capacitance Cst, and the voltage that public electrode provides is Vcom.Fig. 2 is liquid crystal the arrange schematic diagram of liquid crystal panel no touch while occurring, Fig. 3 is that liquid crystal panel has the liquid crystal schematic diagram of arranging touching while generation, from Fig. 2 and Fig. 3, because liquid crystal is as anisotropic a kind of medium, liquid crystal capacitance C1c is relevant with orientation and the spacing of liquid crystal molecule, in the time of touch LCD panel, liquid crystal capacitance C1c can change, and memory capacitance Cst can not change.
As shown in Figure 1, the principle of work of this touch induction circuit is: the voltage of supposing writing pixel unit in previous frame picture is Vp, and the electric charge being therefore stored in liquid crystal capacitance C1c and memory capacitance Cst is:
Qp=Vp*（Cst+C1c）
In the time that the first grid line place applies high level, thin film transistor (TFT) T2 conducting, the voltage Vp of Section Point transfers to signal processor 101 by signal transmssion line, and whether the voltage Vp that signal processor comparison Section Point P is ordered and reference voltage Vref occur to judge to touch.Particularly, when no touch occurs, Section Point P point voltage is Vp; Have while occurring to touch, liquid crystal capacitance C1c is changed to △ Clc, and from principle of charge conservation, P point voltage becomes: Vp1 '=Vp*Clc/ (Clc+ △ Clc), has to touch P point voltage while generation and when no touch occurs and be changed to:
△Vp1=Vp1’-Vp≈Vp*△Clc/（Cst+C1c）/（Cst+C1c）
From above formula, the size of △ Vp1 has directly determined the sensitivity of touch function.
There are the following problems for prior art: change be identically △ Clc in the situation that at liquid crystal capacitance C1c, have the P point voltage touching while generation and when no touch occurs to change △ Vp1 too little, reduced the sensitivity of touch sensible.
Utility model content
The utility model provides a kind of touch induction circuit, panel and touch sensible display device, and it can improve the sensitivity of touch sensible.
For achieving the above object, the utility model provides a kind of touch induction circuit, comprise: the first grid line, the second grid line, data line, signal transmssion line and public electrode, described the first grid line, described the second grid line and described data line limit multiple pixel cells, in described pixel cell, be formed with the first switching tube, second switch pipe and the 3rd switching tube, described signal transmssion line is connected in the signal processor for judging whether that according to signal intensity touch action occurs;
Described the 3rd switching tube is series between described the first switching tube and described second switch pipe;
The junction of described the first switching tube and described the 3rd switching tube forms first node, the junction of described second switch pipe and described the 3rd switching tube forms Section Point, between described first node and described public electrode, be formed with immutable the first electric capacity, between described Section Point and described public electrode, be formed with the second variable electric capacity;
Described signal transmssion line is connected with described second switch pipe, and described data line is connected with described the first switching tube.
Alternatively, described the first switching tube comprises: active layer figure, first grid, the first source electrode, the first drain electrode, described second switch pipe comprises: active layer figure, second grid, the second source electrode, the second drain electrode, and described the 3rd switching tube comprises: active layer figure, the 3rd grid, the 3rd source electrode, the 3rd drain electrode;
Described the first source electrode is connected with described data line, described the first drain electrode is connected to described first node with described the 3rd drain electrode, described the 3rd source electrode and described the second source electrode are connected to described Section Point, described the second drain electrode is connected with described signal transmssion line, described first grid is connected with described the second grid line with described the 3rd grid, and described second grid is connected with described the first grid line.
Alternatively, described first grid, described second grid and described the 3rd grid arrange with layer, and described the first source electrode, described the second source electrode, described the 3rd source electrode, described the first drain electrode, described the second drain electrode and described the 3rd drain electrode arrange with layer.
Alternatively, described the first drain electrode is connected with the first end of described the first electric capacity;
Described the second source electrode is connected with the first end of described the second electric capacity;
Described the 3rd source electrode is connected with the first end of described the second electric capacity, and described the 3rd drain electrode is connected with the first end of described the first electric capacity;
The second end of described the first electric capacity is connected with described public electrode with the second end of described the second electric capacity.
Alternatively, be also formed with pixel electrode in described pixel cell, the first source electrode of described the first switching tube is connected by the first via hole with described signal transmssion line; The second drain electrode of described second switch pipe is connected by the second via hole with described data line, and the second source electrode of described second switch pipe is connected by the 3rd via hole with described pixel electrode; The 3rd source electrode of described the 3rd switching tube is connected by the 4th via hole with pixel electrode.
Alternatively, described public electrode and described the first grid line, described second gate line parallel and same layer arrange, described data line bit is in the top of described the first grid line and described the second grid line, described public electrode top is formed with source-drain electrode figure, described source-drain electrode figure and described data line arrange with layer, and described source-drain electrode figure is positioned at the top of described active layer figure.
Alternatively, described active layer figure top is formed with gate insulation layer, on described gate insulation layer, be formed with the grid layer that comprises first grid, second grid and the 3rd grid, on described grid layer, be formed with middle layer, on described middle layer, be formed with pixel electrode layer, on described pixel electrode layer, be formed with insulation course, on described insulation course, be formed with common electrode layer.
Alternatively, in the time being subject to touching, the change in voltage difference of described Section Point is: △ Vp=Vp '-Vp ≈ Vp* △ Clc/Clc/Clc, wherein, Vp ' is the voltage change of described Section Point, Vp is the Initial Voltage Value of described Section Point, and Clc is the electric capacity initial value of described the second electric capacity, and △ Clc is the capacitance variations value of described the second electric capacity.
For achieving the above object, the utility model provides a kind of touch sensitive panel, comprises touch induction circuit.
For achieving the above object, the utility model provides a kind of touch sensible display device, comprises touch sensitive panel.
Alternatively, also comprise: the subtend substrate being oppositely arranged with described touch sensitive panel, and be packaged in the liquid crystal between described touch sensitive panel and described subtend substrate, and described the first electric capacity is memory capacitance, described the second electric capacity is liquid crystal capacitance.
In touch induction circuit, panel and touch-control sensing display device that the utility model provides, by increase by the 3rd switching tube in touch induction circuit, the junction of the first switching tube and the 3rd switching tube forms first node, the junction of second switch Guan Yu tri-switching tubes forms Section Point, between first node and public electrode, form the first electric capacity, between Section Point and public electrode, form the second electric capacity; Signal transmssion line is connected with second switch pipe, by increase by the 3rd switching tube in touch induction circuit, in the time of the 3rd switching tube conducting,,, in the time of the 3rd switching tube cut-off, have and touch while generation pixel electrode writing pixel voltage by data line, pixel voltage changes, by signal transmssion line, the voltage signal of variation is transferred to signal processing unit the reference voltage comparison in signal transmission unit, thereby judge the generation of touch, it can improve the sensitivity of touch sensible.
Brief description of the drawings
Fig. 1 is the structural representation of touch induction circuit of the prior art;
Fig. 2 is liquid crystal the arrange schematic diagram of liquid crystal panel no touch while occurring;
Fig. 3 is that liquid crystal panel has the liquid crystal schematic diagram of arranging touching while generation;
The structural representation of the touch induction circuit that Fig. 4 provides for the utility model embodiment mono-;
Fig. 5 is the application schematic diagram of the touch induction circuit in embodiment mono-;
Fig. 6 is that A-A in Fig. 5 is to sectional view;
Fig. 7 is that B-B in Fig. 5 is to sectional view.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, a kind of touch induction circuit and method, induction panel and the touch sensible display device that the utility model are provided below in conjunction with accompanying drawing are described in further detail.
The schematic equivalent circuit of the touch induction circuit that Fig. 4 provides for the utility model embodiment mono-, as shown in Figure 4, this touch induction circuit comprises: the first grid line, the second grid line, data line, signal transmssion line and public electrode, the first grid line, the second grid line and data line limit multiple pixel cells, in pixel cell, be formed with the first switch transistor T 1, second switch pipe T2 and the 3rd switch transistor T 3, signal transmssion line is connected in the signal processor 101 for judging whether that according to signal intensity touch action occurs; The 3rd switch transistor T 3 is series between the first switch transistor T 1 and second switch pipe T2; The junction of the first switch transistor T 1 and the 3rd switch transistor T 3 forms first node Q, the junction of second switch pipe T2 and the 3rd switch transistor T 3 forms Section Point P, between first node Q and public electrode Vcom, be formed with immutable the first capacitor C st, between Section Point P and public electrode Vcom, be formed with the second variable capacitor C lc; Signal transmssion line is connected with second switch pipe T2, and data line is connected with the first switch transistor T 1.
Further, the first switch transistor T 1 comprises: active layer figure, first grid, the first source electrode, the first drain electrode, second switch pipe T2 comprises: active layer figure, second grid, the second source electrode, the second drain electrode, and the 3rd switch transistor T 3 comprises: active layer figure, the 3rd grid, the 3rd source electrode, the 3rd drain electrode; Wherein, the first source electrode is connected with data line, and the first drain electrode is connected to first node Q with the 3rd drain electrode, the 3rd source electrode and the second source electrode are connected to Section Point P, the second drain electrode is connected with signal transmssion line, and first grid is connected with the second grid line with the 3rd grid, and second grid is connected with the first grid line.
Preferably, first grid, second grid and the 3rd grid arrange with layer, and the first source electrode, the second source electrode, the 3rd source electrode, the first drain electrode, the second drain electrode and the 3rd drain electrode arrange with layer.
Particularly, first of the first switch transistor T 1 the drain electrode is connected with the first end of the first capacitor C st; The second source electrode of second switch pipe T2 is connected with the first end of the second capacitor C lc; The 3rd source electrode of the 3rd switch transistor T 3 is connected with the first end of the second capacitor C lc, and the 3rd drain electrode of the 3rd switch transistor T 3 is connected with the first end of the first capacitor C st; The second end of the second end of the first capacitor C st and the second capacitor C lc is connected with public electrode Vcom.
Preferably, in the time being subject to touching, the change in voltage difference of Section Point P is: △ Vp=Vp '-Vp ≈ Vp* △ Clc/Clc/Clc, wherein, Vp ' is the voltage change of Section Point P, Vp is the Initial Voltage Value of Section Point P, and Clc is the electric capacity initial value of the second electric capacity, and △ Clc is the capacitance variations value of the second electric capacity.In the time that grid line is opened and apply high level, second switch pipe T2 conducting, have and touch while generation, the voltage Vp of Section Point P is changed to Vp ', now, the change in voltage difference of Section Point P in the time having the generation of touching and no touch to occur is: △ Vp=Vp '-Vp ≈ Vp* △ Clc/Clc/Clc, transmits this change in voltage difference △ Vp to signal processing unit 101 by signal transmssion line, signal processing unit 101 is this change in voltage difference △ Vp and reference voltage Vref relatively, thus the generation that judgement touches.
Fig. 5 is the application schematic diagram of the touch induction circuit in embodiment mono-, Fig. 6 is that A-A in Fig. 5 is to sectional view, Fig. 7 is that B-B in Fig. 5 is to sectional view, as shown in Fig. 5, Fig. 6 and Fig. 7, this touch induction circuit comprises: grid line 505, data line 508, signal transmssion line 512 and public electrode 506, grid line 505 and data line 508 limit multiple pixel cells, are formed with pixel electrode 507, the first switching tube 500, second switch pipe 509 and the 3rd switching tube 502 in pixel cell; The 3rd switching tube 502 is connected with the first switching tube 500 and second switch pipe 509; The junction of the first switching tube 500 and the 3rd switching tube 502 forms first node Q, the junction of second switch pipe 509 and the 3rd switching tube 502 forms Section Point P, between first node Q and public electrode Vcom, form the first electric capacity 503, the first end of the first electric capacity 503 is the source-drain electrode figure of active layer figure top, wherein, the material of active layer is polysilicon.The first end of the first electric capacity 503 is corresponding to the first node Q in Fig. 5, and the second end of the first electric capacity 503 is public electrode 506.Between Section Point P and public electrode Vcom, form the second capacitor C lc; Signal transmssion line 512 is connected with second switch pipe 509.
Wherein, the first source electrode 504 that is also formed with pixel electrode 507, the first switching tubes 500 in pixel cell is connected by the first via hole 513 with signal transmssion line 512; The second drain electrode 511 of second switch pipe 509 is connected by the second via hole 514 with data line 508, and the second source electrode 510 of second switch pipe 509 is connected by the 3rd via hole 516 with pixel electrode 507; The 3rd source electrode 501 of the 3rd switching tube 502 is connected by the 4th via hole 515 with pixel electrode 507.
In the present embodiment, public electrode and the first grid line, second gate line parallel and same layer arrange, data line bit is in the top of the first grid line and the second grid line, particularly, the first grid line and the second grid line are described as an example of grid line 505 example, and parallel with the grid line 505 and same layer of public electrode 506 arranges, data line 508 is positioned at the top of grid line 505, public electrode 506 tops are formed with source-drain electrode figure, and source-drain electrode figure and data line 508 arrange with layer, and source-drain electrode figure is positioned at the top of active layer figure 603.Active layer figure 603 tops are formed with gate insulation layer 604, and the material of gate insulation layer 604 can be for example silicon oxide compounds (SiOx).Below active layer figure 603, be formed with cushion, cushion comprises silicon nitride compound 601(SiNx) and silicon oxide compounds 602(SiOx).
On gate insulation layer 604, be formed with the grid layer 605 that comprises first grid, second grid and the 3rd grid, wherein, grid layer can be single-layer metal layer; Or grid layer can be also metal composite layer, and the material of grid layer can be AlNd/Cr/CrNx, AlNd/Mo, Mo/AlNd/Mo, Al, Al/Mo or Mo/Al/Mo, also can be formed by Cu and other buffering metals such as Mo, Nb and Ti etc.On described grid layer 605, be formed with middle layer, middle layer comprises silicon nitride compound 606(SiNx) and silicon oxide compounds 607(SiOx), on middle layer, be formed with organic film 608, organic film 608 is for playing the effect of planarization, thereby reduce the stray capacitance between data line 508 and public electrode 506, on organic film 608, be formed with pixel electrode layer 609, on pixel electrode layer 609, be formed with insulation course 610, the material of insulation course 610 can be for example silicon nitride compound (SiNx).On insulation course 610, be formed with common electrode layer 611.Wherein pixel electrode layer 609, insulation course 610 and common electrode layer 611 form the second capacitor C lc, and the second capacitor C lc can be liquid crystal capacitance.Wherein, silicon nitride compound 701(SiNx in Fig. 7) and silicon oxide compounds 702(SiOx) silicon nitride compound 601(SiNx in cushion in corresponding diagram 6) and silicon oxide compounds 602(SiOx) corresponding respectively, gate insulation layer 604 in gate insulation layer 704 corresponding diagram 6 in Fig. 7, silicon nitride compound 706(SiNx in Fig. 7) and silicon oxide compounds 707(SiOx) silicon nitride compound 606(SiNx in middle layer in corresponding diagram 6) and silicon oxide compounds 607(SiOx), data line 508 and signal transmssion line 512 in cabling 708 corresponding diagram 6 in Fig. 7, organic film 609 in organic film 709 corresponding diagram 6 in Fig. 7, insulation course 610 in silicon nitride layer 710 corresponding diagram 6 in Fig. 7, insulation course 610 can be for example silicon nitride compound (SiNx).
In the present embodiment, preferably, the first switch transistor T 1, second switch pipe T2, the 3rd switch transistor T 3 are N-type polycrystalline SiTFT.The active area of polycrystalline SiTFT is made up of polysilicon, and the source-drain electrode of polycrystalline SiTFT forms by ion doping, and therefore, polycrystalline SiTFT has better electric conductivity, when as switching transistor, can reduce volume.Certainly, the present embodiment also can adopt amorphous silicon film transistor or oxide thin film transistor.
Below in conjunction with accompanying drawing 4 and accompanying drawing 5, the principle of work of the touch induction circuit to the present embodiment is elaborated, as shown in Figure 4, the voltage of supposing writing pixel unit in previous frame picture is Vp, and the electric charge being therefore stored in liquid crystal capacitance C1c and memory capacitance Cst is:
Qp=Vp*(Cst+C1c) particularly,, in the time that no touch occurs, Section Point P point voltage is the voltage Vp of writing pixel unit in previous frame picture; In the time having the touch of generation, liquid crystal capacitance C1c is changed to △ Clc, and because the 3rd switch transistor T 3 is ended, by charge conservation, Section Point P point voltage becomes:
Vp2’=Vp*Clc/(Clc+△Clc)
By above formula, have to touch while generation and when no touch occurs Section Point P point voltage and change difference and be: △ Vp2=Vp2 '-Vp ≈ Vp* △ Clc/Clc/Clc
In prior art, have to touch while generation and when no touch occurs Section Point P point voltage and change difference and be:
△Vp1=Vp1’-Vp≈Vp*△Clc/（Cst+C1c）/（Cst+C1c）
Compare, in the situation that liquid crystal capacitance C1C variable quantity is identical:
△Vp2/△Vp1=(Cst+Clc)*(Cst+Clc)/Clc/Clc
If the capacitance of liquid crystal capacitance Clc and memory capacitance Cst is 200fF, △ Vp2/ △ Vp2=4.That is to say, in the situation that liquid crystal capacitance variation △ Clc is identical, touch induction circuit in the present embodiment have touch while occurring and when no touch occurs Section Point P point voltage change difference and increase 4 times than touch induction circuit of the prior art, thereby the sensitivity that has improved touch sensible.
In the touch induction circuit that the present embodiment provides, this touch induction circuit comprises: grid line, data line, signal transmssion line and public electrode, grid line and data line limit multiple pixel cells, are formed with pixel electrode, the first switching tube, second switch pipe and the 3rd switching tube in pixel cell; The 3rd switching tube is connected with the first switching tube and second switch pipe; The junction of the first switching tube and the 3rd switching tube forms first node, and the junction of second switch Guan Yu tri-switching tubes forms Section Point, forms the first electric capacity between first node and public electrode, forms the second electric capacity between Section Point and public electrode; Signal transmssion line is connected with second switch pipe, by increase by the 3rd switching tube in touch induction circuit, in the time of the 3rd switching tube conducting,,, in the time of the 3rd switching tube cut-off, have and touch while generation pixel electrode writing pixel voltage by data line, pixel voltage changes, by signal transmssion line, the voltage signal of variation is transferred to signal processing unit the reference voltage comparison in signal transmission unit, thereby judge the generation of touch, it can improve the sensitivity of touch sensible.
The utility model implementation column two provides a kind of touch sensible method, this touch sensible method is based on touch induction circuit, this touch induction circuit comprises: the first grid line, the second grid line, data line, signal transmssion line and public electrode, described the first grid line, described the second grid line and described data line limit multiple pixel cells, in described pixel cell, be formed with the first switching tube, second switch pipe and the 3rd switching tube, described signal transmssion line is connected in signal processor; Described the 3rd switching tube is series between described the first switching tube and described second switch pipe; The junction of described the first switching tube and described the 3rd switching tube forms first node, the junction of described second switch pipe and described the 3rd switching tube forms Section Point, between described first node and described public electrode, be formed with immutable the first electric capacity, between described Section Point and described public electrode, be formed with the second variable electric capacity; Described signal transmssion line is connected with described second switch pipe, and described data line is connected with described the first switching tube;
This touch sensible method comprises:
Step S10, the conducting under the control of described the first grid line of described second switch pipe, and arrive described signal processor by described signal transmssion line output sensing signal, judge whether that according to signal intensity touch action occurs for described signal processor;
Step S11, described the first switching tube and described the 3rd switching tube conducting under the control of described the second grid line, data line is to described first node and described Section Point writing pixel voltage.
Touch induction circuit in the present embodiment adopts the touch induction circuit in above-described embodiment one, and its embodiment refers to above-described embodiment one, repeats no more herein.
In the touch sensible method that the present embodiment provides, this touch sensible method is based on touch induction circuit, by increase by the 3rd switching tube in touch induction circuit, in the time of the 3rd switching tube conducting, by data line to pixel electrode writing pixel voltage, in the time of the 3rd switching tube cut-off, have and touch while generation, pixel voltage changes, by signal transmssion line, the voltage signal of variation is transferred to signal processing unit the reference voltage comparison in signal transmission unit, thereby judge the generation of touch, it can improve the sensitivity of touch sensible.
The utility model embodiment tri-provides a kind of touch sensitive panel, and this touch sensitive panel comprises touch induction circuit.Wherein, touch induction circuit can adopt the touch induction circuit described in above-described embodiment one, repeats no more herein.
In the touch sensitive panel that the present embodiment provides, this touch sensitive panel comprises touch induction circuit, by increase by the 3rd switching tube in touch induction circuit, in the time of the 3rd switching tube conducting, by data line to pixel electrode writing pixel voltage, in the time of the 3rd switching tube cut-off, have and touch while generation, pixel voltage changes, by signal transmssion line, the voltage signal of variation is transferred to signal processing unit the reference voltage comparison in signal transmission unit, thereby judge the generation of touch, it can improve the sensitivity of touch sensible.
The utility model embodiment tetra-provides a kind of touch sensible display device, and this touch sensible display device comprises touch sensitive panel.Wherein, touch sensitive panel can adopt the touch sensitive panel described in above-described embodiment three, repeats no more herein.
Further, touch sensible display device can also also comprise: the subtend substrate being oppositely arranged with touch sensitive panel, and be packaged in the liquid crystal between touch sensitive panel and subtend substrate, and wherein, the first electric capacity is memory capacitance, the second electric capacity is liquid crystal capacitance.
In the touch sensible display device that the present embodiment provides, this touch sensible display device comprises touch induction circuit, by increase by the 3rd switching tube in touch induction circuit, in the time of the 3rd switching tube conducting, by data line to pixel electrode writing pixel voltage, in the time of the 3rd switching tube cut-off, have and touch while generation, pixel voltage changes, by signal transmssion line, the voltage signal of variation is transferred to signal processing unit the reference voltage comparison in signal transmission unit, thereby judge the generation of touch, it can improve the sensitivity of touch sensible.
Be understandable that, above embodiment is only used to principle of the present utility model is described and the illustrative embodiments that adopts, but the utility model is not limited to this.For those skilled in the art, in the situation that not departing from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement are also considered as protection domain of the present utility model.
Claims (11)
1. a touch induction circuit, it is characterized in that, comprise: the first grid line, the second grid line, data line, signal transmssion line and public electrode, described the first grid line, described the second grid line and described data line limit multiple pixel cells, in described pixel cell, be formed with the first switching tube, second switch pipe and the 3rd switching tube, described signal transmssion line is connected in the signal processor for judging whether that according to signal intensity touch action occurs;
Described the 3rd switching tube is series between described the first switching tube and described second switch pipe;
The junction of described the first switching tube and described the 3rd switching tube forms first node, the junction of described second switch pipe and described the 3rd switching tube forms Section Point, between described first node and described public electrode, be formed with immutable the first electric capacity, between described Section Point and described public electrode, be formed with the second variable electric capacity;
Described signal transmssion line is connected with described second switch pipe, and described data line is connected with described the first switching tube.
2. touch induction circuit according to claim 1, it is characterized in that, described the first switching tube comprises: active layer figure, first grid, the first source electrode, the first drain electrode, described second switch pipe comprises: active layer figure, second grid, the second source electrode, the second drain electrode, and described the 3rd switching tube comprises: active layer figure, the 3rd grid, the 3rd source electrode, the 3rd drain electrode;
Described the first source electrode is connected with described data line, described the first drain electrode is connected to described first node with described the 3rd drain electrode, described the 3rd source electrode and described the second source electrode are connected to described Section Point, described the second drain electrode is connected with described signal transmssion line, described first grid is connected with described the second grid line with described the 3rd grid, and described second grid is connected with described the first grid line.
3. touch induction circuit according to claim 2, it is characterized in that, described first grid, described second grid and described the 3rd grid arrange with layer, and described the first source electrode, described the second source electrode, described the 3rd source electrode, described the first drain electrode, described the second drain electrode and described the 3rd drain electrode arrange with layer.
4. touch induction circuit according to claim 2, is characterized in that, described the first drain electrode is connected with the first end of described the first electric capacity;
Described the second source electrode is connected with the first end of described the second electric capacity;
Described the 3rd source electrode is connected with the first end of described the second electric capacity, and described the 3rd drain electrode is connected with the first end of described the first electric capacity;
The second end of described the first electric capacity is connected with described public electrode with the second end of described the second electric capacity.
5. touch induction circuit according to claim 4, is characterized in that, is also formed with pixel electrode in described pixel cell, and the first source electrode of described the first switching tube is connected by the first via hole with described signal transmssion line; The second drain electrode of described second switch pipe is connected by the second via hole with described data line, and the second source electrode of described second switch pipe is connected by the 3rd via hole with described pixel electrode; The 3rd source electrode of described the 3rd switching tube is connected by the 4th via hole with pixel electrode.
6. touch induction circuit according to claim 5, it is characterized in that, described public electrode and described the first grid line, described second gate line parallel and same layer arrange, described data line bit is in the top of described the first grid line and described the second grid line, described public electrode top is formed with source-drain electrode figure, described source-drain electrode figure and described data line arrange with layer, and described source-drain electrode figure is positioned at the top of described active layer figure.
7. touch induction circuit according to claim 6, it is characterized in that, described active layer figure top is formed with gate insulation layer, on described gate insulation layer, be formed with the grid layer that comprises first grid, second grid and the 3rd grid, on described grid layer, be formed with middle layer, on described middle layer, be formed with pixel electrode layer, on described pixel electrode layer, be formed with insulation course, on described insulation course, be formed with common electrode layer.
8. touch induction circuit according to claim 1, it is characterized in that, in the time being subject to touching, the change in voltage difference of described Section Point is: △ Vp=Vp '-Vp ≈ Vp* △ Clc/Clc/Clc, wherein, the voltage change that Vp ' is described Section Point, the Initial Voltage Value that Vp is described Section Point, Clc is the electric capacity initial value of described the second electric capacity, and △ Clc is the capacitance variations value of described the second electric capacity.
9. a touch sensitive panel, comprises arbitrary described touch induction circuit in the claims 1-8.
10. a touch sensible display device, comprises touch sensitive panel claimed in claim 9.
11. touch sensible display devices according to claim 10, it is characterized in that, also comprise: the subtend substrate being oppositely arranged with described touch sensitive panel, and be packaged in the liquid crystal between described touch sensitive panel and described subtend substrate, described the first electric capacity is memory capacitance, and described the second electric capacity is liquid crystal capacitance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320751005.9U CN203643967U (en) | 2013-11-22 | 2013-11-22 | Touch induction circuit, panel and touch induction display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320751005.9U CN203643967U (en) | 2013-11-22 | 2013-11-22 | Touch induction circuit, panel and touch induction display device |
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| CN203643967U true CN203643967U (en) | 2014-06-11 |
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| CN201320751005.9U Expired - Fee Related CN203643967U (en) | 2013-11-22 | 2013-11-22 | Touch induction circuit, panel and touch induction display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103616971A (en) * | 2013-11-22 | 2014-03-05 | 合肥京东方光电科技有限公司 | Touch induction circuit, method and panel thereof and touch induction display device |
| CN109521593A (en) * | 2018-12-25 | 2019-03-26 | 厦门天马微电子有限公司 | Display panel and display device |
| CN111179866A (en) * | 2018-11-12 | 2020-05-19 | 奇景光电股份有限公司 | Liquid crystal display device |
-
2013
- 2013-11-22 CN CN201320751005.9U patent/CN203643967U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103616971A (en) * | 2013-11-22 | 2014-03-05 | 合肥京东方光电科技有限公司 | Touch induction circuit, method and panel thereof and touch induction display device |
| WO2015074419A1 (en) * | 2013-11-22 | 2015-05-28 | 京东方科技集团股份有限公司 | Touch sensing circuit, method thereof, panel and touch sensing display apparatus |
| CN103616971B (en) * | 2013-11-22 | 2016-08-17 | 合肥京东方光电科技有限公司 | Touch induction circuit and method, panel and touch sensible display device |
| US9459743B2 (en) | 2013-11-22 | 2016-10-04 | Boe Technology Group Co., Ltd. | Touch sensing circuit, touch sensing method, touch sensing panel and touch sensing display device |
| CN111179866A (en) * | 2018-11-12 | 2020-05-19 | 奇景光电股份有限公司 | Liquid crystal display device |
| CN109521593A (en) * | 2018-12-25 | 2019-03-26 | 厦门天马微电子有限公司 | Display panel and display device |
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