CN203642868U - Standard silicon slice thickness measuring device - Google Patents
Standard silicon slice thickness measuring device Download PDFInfo
- Publication number
- CN203642868U CN203642868U CN201320778874.0U CN201320778874U CN203642868U CN 203642868 U CN203642868 U CN 203642868U CN 201320778874 U CN201320778874 U CN 201320778874U CN 203642868 U CN203642868 U CN 203642868U
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- China
- Prior art keywords
- jewel
- liftable
- thickness
- silicon slice
- silicon chip
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Abstract
A standard silicon slice thickness measuring device is composed of a high-precision inductance sensor, a granite frame structure and a liftable jewel spherical workbench. The granite frame structure is a double-layer workbench, the upper-layer workbench is a silicon slice bearing platform to bear a tested standard silicon slice, and the lower-layer workbench is a pedestal. Five adjustable supporting pins are arranged on the pedestal to be connected with the silicon slice bearing platform, the liftable jewel spherical workbench and an inductance sensor positioning frame are fixed and borne on the pedestal, and the side surface of the inductance sensor positioning frame is in screw joint with the high-precision inductance sensor. The liftable jewel spherical workbench which is equipped with a ruby measuring head and a rib and of which the diameter is 60 mm is arranged in the center of the silicon slice bearing platform below the inductance sensor, the measuring head exactly faces the center of the lower liftable jewel spherical workbench, and the silicon slice is arranged between the ruby measuring head and the inductance sensor, when the thickness of the silicon slice is measured. The whole device is suitable for calibrating the thickness of the standard silicon slice of which the diameter is not greater than 305 mm, and has the characteristics of compact structure, simple and convenient operation, high accuracy and good reliability.
Description
Technical field
The utility model relates to a kind of measurement mechanism, especially standard silicon chip measurer for thickness.
Background technology
Standard silicon chip be each silicon chip and integrated circuit production firm in silicon chip production run for controlling the standard model of silicon wafer thickness.In production line, taking standard silicon chip as benchmark, use the thickness of the method measurement products silicon chip comparing and measuring.The standard silicon chip of production firm is to come into operation after calibrating by metrological service.The parameter that standard silicon chip need measure has: thickness, flatness and integrated circuit test pattern etc.Standard silicon chip has the characteristics such as area is large, thickness is little, frangible, flatness is low, there is no at present suitable instrument and can be used for standard silicon chip thickness measure, also can supply without ready-made equipment both at home and abroad.
Utility model content
The technical matters that the application will solve is in order to overcome above-mentioned defect, and a kind of standard silicon chip measurer for thickness is provided.
For solving the problems of the technologies described above, the technical scheme of employing is:
Standard silicon chip measurer for thickness, by high precision inductance amesdial, grouan framed structure, liftable jewel sphere worktable composition, grouan framed structure is double layer working bench, upper strata workbench is that silicon wafer bearing table carries tested standard silicon chip, flatness is 2 μ m, lower floor's worktable is base, on base, there are five adjustable support foots to be connected with silicon wafer bearing table, fixing carrying liftable jewel sphere worktable and inductance amesdial positioning framework on base, the inductance amesdial positioning framework side high precision inductance amesdial that is spirally connected, high precision inductance amesdial resolution is 0.1 μ m, range 1800 μ m, the diameter that silicon wafer bearing table central authorities below inductance amesdial arrange with ruby gauge head is 60mm band muscle liftable jewel sphere worktable, its gauge head is the center to below liftable jewel sphere worktable just, it is 0.1 μ m that liftable jewel sphere vertical displacement of stage regulates sensitivity, in the time measuring silicon wafer thickness, silicon chip is between ruby gauge head and inductance amesdial.
The beneficial effects of the utility model are: package unit is applicable to the thickness calibration that diameter is not more than 305mm standard silicon chip, to different diameters and the standard silicon chip of thickness, uncertainty of measurement reaches 0.2 μ m, there is compact conformation, easy and simple to handle, accuracy is high, the feature of good reliability, realized the magnitude tracing of standard silicon chip thickness.
Brief description of the drawings
Fig. 1 is measurement mechanism schematic diagram.
Wherein, 1-high precision inductance amesdial; The tested standard silicon chip of 2-; 3-measuring table and base; 4-liftable jewel sphere worktable.
Embodiment
Standard silicon chip measurer for thickness is made up of high precision inductance amesdial, grouan framed structure and adjustable ruby sphere worktable three parts.It is applicable to the thickness calibration of diameter 305mm (12inch) standard silicon chip.To different diameters and the standard silicon chip of thickness, perpendicular to surface direction, realize point-to-point measurement, the uncertainty of measurement of calibration criterion silicon wafer thickness is 0.2 μ m.Grouan framed structure is double layer working bench, upper strata workbench is silicon wafer bearing table, can carry the silicon chip that diameter is greater than 305mm (12inch), workplace flatness is 2 μ m, lower floor's worktable is base, there are five adjustable support foots to be connected with upper strata workbench, and carry adjustable ruby sphere worktable and inductance amesdial positioning framework (Fig. 1).High precision inductance amesdial resolution is 0.1 μ m, and range 1800 μ m measure the relatively little degree of certainty 0.5% of indicating value, and its gauge head is positioned on the adjustable support on grouan framework, with the central authorities of the ruby worktable of below to center.It is 0.1 μ m that adjustable ruby sphere vertical displacement of stage regulates sensitivity.Before measurement standard silicon wafer thickness, zero setting after inductance amesdial contacts with ruby worktable central authorities.Thickness to tested silicon chip is predicted, obtaining after the basic size of silicon wafer thickness, the enterprising rower of horizontal metroscope that is 0.08 μ m in uncertainty of measurement by inductance amesdial is determined, realize nonlinear compensation by revising its error of indication, then, inductance amesdial is arranged on standard silicon chip measurer for thickness, the diverse location of silicon chip is measured.Seminar adopts grouan platform horizontal setting silicon chip, large to adapt to silicon area, thin thickness, the characteristic such as frangible.Adopt high precision inductance amesdial to measure the thickness of silicon chip, to adapt to the demand of various thickness and even thickness degree.Inductance amesdial dynamometry is less, and in the time of 200 μ m range, dynamometry is 0.85N, and in the time of 900 μ m range, dynamometry is 0.96N, and this is conducive to the silicon chip breakage that prevents that dynamometry from causing, and reduces the measurement distortion that dynamometry causes.The experiment proved that, in the time that dynamometry is 1N and 2N, the variation in thickness that the distortion of standard silicon chip causes is less than 0.05 μ m.But inductance amesdial is amount of nonlinearity instrument, in 200 μ m ranges, deviation of reading is less than 0.1 μ m; In the time of 900 μ m range, deviation of reading has 6 μ m.And be linear at the dial gauge of internal inductance among a small circle at 900 μ m range places.Deviation of reading within the scope of 900 μ m range place ± 4 μ m is less than 0.1 μ m after measured, therefore, in the time of the thickness of measurement standard silicon chip, first through prediction, then inductance amesdial is demarcated on high precision horizontal metroscope, to improve the accuracy of measurement.Standard silicon chip area is large, thin thickness, and its flatness can not be fine.When measurement, the bottom surface of standard silicon chip and worktable center are gapped, may cause measurement result to be greater than physical size value in the situation that dynamometry is very little.The diameter that the grouan platform central authorities of the carrying silicon chip below inductance amesdial arrange with ruby gauge head is 60mm band muscle surveying work platform, and this worktable can carry out lift adjustment, and ruby gauge head sphere top is higher than band muscle worktable 4 μ m.In the time measuring silicon wafer thickness, silicon chip is between ruby gauge head and inductance amesdial; In the time of jacking surveying work platform, can be observed inductance amesdial and follow rising, to guarantee that standard silicon chip bottom surface contacts with central ruby gauge head.Be standard silicon chip thickness with regard to obtaining inductance amesdial gauge head to the distance between ruby gauge head thus.Through experimental verification, while being measured as 0.85N, the silicon chip of 200 μ m thickness is within the scope of 70mm, to have the downward elastic displacement of nearly 30 μ m at diameter.While being measured as 0.96N, the silicon chip of 900 μ m thickness has the downward elastic displacement of nearly 20 μ m within the scope of diameter 70mm.It can be confirmed ruby gauge head sphere top and band muscle workbench equal-height, in measuring process, silicon chip bottom surface contacts all the time with central ruby gauge head, asks gap deviation thereby eliminate the measurement being caused by flatness, realizes the point-to-point measurement at vertical silicon chip surface.
Claims (1)
1. standard silicon chip measurer for thickness, it is characterized in that: by high precision inductance amesdial, grouan framed structure, liftable jewel sphere worktable composition, grouan framed structure is double layer working bench, upper strata workbench is that silicon wafer bearing table carries tested standard silicon chip, flatness is 2 μ m, lower floor's worktable is base, on base, there are five adjustable support foots to be connected with silicon wafer bearing table, fixing carrying liftable jewel sphere worktable and inductance amesdial positioning framework on base, the inductance amesdial positioning framework side high precision inductance amesdial that is spirally connected, high precision inductance amesdial resolution is 0.1 μ m, range 1800 μ m, the diameter that silicon wafer bearing table central authorities below inductance amesdial arrange with ruby gauge head is 60mm band muscle liftable jewel sphere worktable, its gauge head is the center to below liftable jewel sphere worktable just, it is 0.1 μ m that liftable jewel sphere vertical displacement of stage regulates sensitivity, in the time measuring silicon wafer thickness, silicon chip is between ruby gauge head and inductance amesdial.
Priority Applications (1)
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CN201320778874.0U CN203642868U (en) | 2013-12-02 | 2013-12-02 | Standard silicon slice thickness measuring device |
Applications Claiming Priority (1)
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CN201320778874.0U CN203642868U (en) | 2013-12-02 | 2013-12-02 | Standard silicon slice thickness measuring device |
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CN203642868U true CN203642868U (en) | 2014-06-11 |
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CN201320778874.0U Expired - Fee Related CN203642868U (en) | 2013-12-02 | 2013-12-02 | Standard silicon slice thickness measuring device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104457479A (en) * | 2014-11-28 | 2015-03-25 | 天奇自动化工程股份有限公司 | Welding trolley checking tool |
-
2013
- 2013-12-02 CN CN201320778874.0U patent/CN203642868U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104457479A (en) * | 2014-11-28 | 2015-03-25 | 天奇自动化工程股份有限公司 | Welding trolley checking tool |
CN104457479B (en) * | 2014-11-28 | 2017-06-13 | 天奇自动化工程股份有限公司 | Heating device cubing |
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Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140611 Termination date: 20161202 |
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CF01 | Termination of patent right due to non-payment of annual fee |